CN103094250B - One trims resistance and manufacture method thereof - Google Patents

One trims resistance and manufacture method thereof Download PDF

Info

Publication number
CN103094250B
CN103094250B CN201210576025.7A CN201210576025A CN103094250B CN 103094250 B CN103094250 B CN 103094250B CN 201210576025 A CN201210576025 A CN 201210576025A CN 103094250 B CN103094250 B CN 103094250B
Authority
CN
China
Prior art keywords
fuse
trim
resistance
fused area
dielectric layer
Prior art date
Application number
CN201210576025.7A
Other languages
Chinese (zh)
Other versions
CN103094250A (en
Inventor
杨彦涛
陈文伟
刘慧勇
韩健
江宇雷
雷辉
Original Assignee
杭州士兰集成电路有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 杭州士兰集成电路有限公司 filed Critical 杭州士兰集成电路有限公司
Priority to CN201210576025.7A priority Critical patent/CN103094250B/en
Publication of CN103094250A publication Critical patent/CN103094250A/en
Application granted granted Critical
Publication of CN103094250B publication Critical patent/CN103094250B/en

Links

Abstract

The invention provides one and trim resistance, comprise Semiconductor substrate; Dielectric layer, is formed in Semiconductor substrate; Fuse trims shape, is formed on dielectric layer by fuse deposit, and fuse trims shape fused area and two ends, the trimming structure and have connection gasket respectively at the two ends that fuse trims shape of the current density that changes in fused area size; Passivation layer, is formed in fuse and trims on shape and dielectric layer, and passivation layer has correspondence to trim trimming window and having the pressure point window of corresponding connection gasket respectively of structure.The present invention also provides the manufacture method trimming resistance, utilize fuse trim shape have in fused area change current density size trim structure, the fuse effective cross section trimming structure place is made to amass less than normal, current density is bigger than normal, fusing position is fixed, fused area is less, make simultaneously on fuse to trim window perforate less, ohmicallyly trim the caused security risk such as excessive the caused metal residual of window and chemical residual to reduce to trim.

Description

One trims resistance and manufacture method thereof

Technical field

The invention belongs to semiconductor fabrication process technical field, particularly relate to one and trim resistance and manufacture method thereof.

Background technology

IC Layout is comparatively standardization and idealized usually, affects, cause the size and the electrical functionality generation error that design anticipation in the manufacture process of reality by factors such as producer, process, technological fluctuation and test conditions.For needing the product adjusting reference voltage and reference frequency, current limliting and point compression functions of resistance extensively use in analog circuit, but resistance is by the impact of doping content and diffusion, error can reach ± and 20%, so large error can not meet the requirement of high-precision circuit.In order to eliminate the factors such as producer, process, technological fluctuation and test condition to the impact of chip performance, in tube core domain, often design the adjustable resistance being called as and trimming resistance (Trimresistor).The layout trimming resistance is connected with main functional circuit, only need to adopt suitable test program when chip testing, pressure point is trimmed to trimming blowing of resistance selection by what make specially, make to trim resistance between pressure point as much as possible close to theoretical value, thus by trim resistance choose and the change of structure reaches performance required for circuit designers.

Trim resistance and be usually divided into fuse, Zener diode and film resistor laser-adjusting three kinds.The semifixed resistor that film resistor laser-adjusting method realizes can make precision within ± 0.1%, but apparatus expensive, technique is more complicated.Fuse and Zener diode puncture similarly with the selection of metal can reset resistor network, can be used as program switch design in tube core.But Zener diode is owing to puncturing structure and scorification feature, to metal material, doping level, contact hole resistance, trim direction etc. there is higher requirement, not by using the technique of refractory metal or silicide to make Zener breakdown pipe, and the B alloy wire movement of melting in practice quickly and have no rule to such an extent as to be difficult to control, therefore adopt Zener diode realize trim the less of resistance.It is relative with test specification simple to technique due to the technology of blowing that fuse-class trims resistance, extensively adopts in practice.Conventional fuse-class method for repairing and regulating makes fuse fuse instantaneously for adding immediate current, immediate current density is utilized to produce concentrated heat accumulation in electrical resistance, resistance is made to reach fusing point, cause fusing and evaporation, fuse-class method for repairing and regulating also can adopt the method increasing transient voltage, but punctures the less of employing because high pressure easily can cause other positions of product.

Fuse-class method for repairing and regulating is mainly divided into metal and polysilicon two kinds according to material, main to be commonly used to the aluminium of wiring in metal, and polysilicon is heavy doping.The fusing point of aluminium is relatively low (660 DEG C), the current impulse of to be several milliseconds of sizes be the cycle when trimming hundreds of milliampere just can by fuse failure, when starting to vaporize, major part metal is fusible and discharge, utilize metal fuse to be easy to programming, and also can reach the effect of trimming reliably for refractory metal fuse.Polysilicon fuse fusing point higher than aluminium a lot (1410 DEG C), and very crisp, and easily break in the process of Fast Heating, the time requiring program current pulse to rise is enough short.

The principle of fuse-class method for repairing and regulating is identical, similar, is all by after the fusing of fuse, fuse is opened a way reach to trim effect, Figure 1 shows that traditional metal fuse that is representative with aluminum fuse trims the Facad structure schematic diagram of resistance.Comprising: 10 for trimming metal, describedly trim metal 10 whole piece width and consistency of thickness, 11 for trimming connection gasket (TrimPAD), 12 for trimming the pressure point window on metal 10,13 for trimming the pressure point window on connection gasket 11, and trim the passivation layer on metal 10 except pressure point window 12 region trimmed on metal described in covering.The described pressure point window 12 trimmed on metal is beneficial to energy abrupt release when fusing trims metal and evaporation of metal; if but described in the pressure point window 12 that trims on metal too small; in the process of fuse failure, fault offset does not fall; the passivation layer fracture shielded can be made; breach size and metal spill direction and exist a lot of uncertain; can extend in neighbouring circuit structure, cause potential security risk.If but described in the pressure point window that trims on metal excessive, trim Metal Melting collapse and the metal that disorderly spatters easily remain in described in trim the pressure point window on metal and trim multiple region near the pressure point window on metal, there is the risk of short circuit, also easily in Hou Dao, packaging technology, occur the security risk such as metal residual, chemical residual.

Figure 2 shows that the metal fuse of Fig. 1 trims that trimming appearred in resistance, whole piece trims Facad structure schematic diagram when metal trims.Wherein 14a and 14b trims the termination that metal trims rear metal, 15 for trim metal trim the metal residual spilt drop on described in trim metal pressure point window and passivation layer on.Trim metal 10 to evaporate incomplete reason mainly to trim metal too much, pressure point window 12 opening trimmed on metal is less, and test condition is improper etc. causes.When there is problems, the metal trimming the pressure point window on metal described in remaining in and trim multiple region near the pressure point window on metal cannot go to the greatest extent by common cleaning condition, and part cleaning fluid also can remain and along interfacial corrosion to passivation layer, be corrupted to neighbouring circuit structure, cause the inefficacy of product.

Figure 3 shows that the Facad structure schematic diagram that the metal fuse of Fig. 1 trims resistance and occurs when trimming insufficient, wherein 16a and 16b trims the termination that metal trims rear metal, two termination (16a and 16b) spacing are very little, the moment trimming metal 10 and carry out trimming, due to metal molten characteristic, when aluminium occurs to fuse, the metal at two ends is globular collapsed is also high temperature liquid state, there will be the situation of down trickling.If the distance of two terminations (16a and 16b) is enough little, the metal at two ends can merge again, and trim metal 10 and couple together again, 17a and 17b as shown in Figure 4 connects together, and causes trimming metal 10 and trims failure.

Therefore, traditional metal fuse trims in resistance, the any position trimming metal owing to trimming whole piece in process all likely becomes the point of override fusing, trims the multiple situation that trimming easily appearred in metal, whole piece metal is trimmed, it is insufficient to trim, trim failure; In addition, because striking point is not fixed, fusing amount is different, and required test condition is also different, makes the debugging of test condition add a lot of difficulty undoubtedly, and test program stability and accuracy can not well be ensured, produces more inefficacy tube core; Trim excessive and too small all can the having influence on of pressure point window on metal simultaneously and trim effect, add security risk etc.

Summary of the invention

The object of this invention is to provide one and trim resistance and manufacture method thereof, the fusing position trimming resistance is fixed, and to trim the metal evaporated in the zonule near the striking point of resistance less, trim the caused unreliability risk such as excessive the caused metal residual of ohmically pressure point window and chemical residual to reduce.

In order to solve the problem, the invention provides one and trimming resistance, comprising:

Semi-conductive substrate;

One dielectric layer, is formed in described Semiconductor substrate;

One fuse trims shape, be formed on described dielectric layer by fuse deposit, described fuse trims shape and has a fused area and two ends, has and change trimming structure and having a connection gasket respectively at the two ends that described fuse trims shape of current density size in described fused area;

One passivation layer, is formed in described fuse and trims on shape and dielectric layer, and described passivation layer has and to trim trimming window and having a pressure point window of corresponding described connection gasket respectively of structure described in correspondence.

Further, trimming structure described in is curved shape.

Further, the width of described curved shape is identical with the width of the fused area except described curved shape or narrow.

Preferably, when the narrowed width of described curved shape, the width of the fused area beyond described curved shape is greater than 1.5 times of the width of described curved shape.

Preferably, described curved shape is at least one turning, and the angle of the both sides fuse being separation with each described turning is 1-179 degree.

Further, identical or not identical with the width of the described turning both sides fuse that is separation.

Preferably, described curved shape is at least one arc, and every section of described arc is the radian of circular arc or ellipse arc is 1-359 degree.

Preferably, described dielectric layer has at least one ladder, and the described curved shape be covered on each described ladder is a step.

Preferably, the height of described step is more than or equal to 0.1 times of described fuse thickness.

Further, described in trim window and contain residence and state fused area, described in trim the shape of the shape of window and fused area identical or different.

Preferably, described in trim the shape of window identical with the shape of fused area time, described in trim the twice that window size is more than or equal to fused area.

Optionally, described dielectric layer is single-layer medium layer or compound medium layer.

Preferably, the thickness of described dielectric layer is

Optionally, when the material that described fuse adopts is polysilicon, the thickness of described fuse is

Optionally, when the material that described fuse adopts is metal, the material that described metal adopts trims metallic aluminium, copper, aluminium alloy or aluminium copper that resistance connects for connecting up described in being formed in, and the thickness of described fuse is

Optionally, the material that described passivation layer and dielectric layer use is have the large Selection radio of difference.

According to a further aspect in the invention, a kind of manufacture method trimming resistance is provided, comprises the steps:

Semi-conductive substrate is provided, makes a dielectric layer on the semiconductor substrate;

Deposit fuse on described dielectric layer;

Choose a fused area of described fuse, remove the portions of fusing filaments in described fused area, expose described dielectric layer, the position of not removing fuse in described fused area formed one have change current density size trim structure, and the fuse two ends outside described fused area form a connection gasket respectively, thus formation fuse trims shape;

Shape and deposit passivation layer on the described dielectric layer exposed is trimmed at described fuse, remove part passivation layer, formation trims window, described trim window expose described in trim structural fuse and described in trim dielectric layer below structural fuse, passivation layer on described connection gasket makes pressure point window, formed and trim resistance.

Further, trimming structure described in is curved shape.

Further, the width of described curved shape is identical with the width of the fused area except described curved shape or narrow.

Preferably, when the narrowed width of described curved shape, the width of the fused area beyond described curved shape is greater than 1.5 times of the width of described curved shape.

Preferably, the curved shape that the position of not removing fuse in described fused area makes is for having at least one turning, described corner formed have change current density size trim structure, be the angle that 1-179 degree made by the both sides fuse of separation by described turning.

Further, be that the width of both sides fuse of separation is made identical or not identical by described turning.

Preferably, the curved shape that the position of not removing fuse in described fused area makes is for having at least one arc, formed at described arc place have change current density size trim structure, described arc is made there is the circular arc or ellipse arc that radian is 1-359 degree.

Preferably, before fuse described in deposit, described dielectric layer is formed the shape with at least one ladder, after fuse described in deposit, choosing the fuse covered on described ladder is fused area, the curved shape that the position of not removing fuse in described fused area makes for having step, described step place formed have change current density size trim structure.

Preferably, the height of described step is more than or equal to 0.1 times of described fuse thickness.

Further, described in trim window and contain residence and state fused area, described in trim the shape of the shape of window and fused area identical or different.

Preferably, described in trim the shape of window identical with the shape of fused area time, described in trim the twice that window size is more than or equal to fused area.

Optionally, the step making a dielectric layer is on the semiconductor substrate: adopt the single-layer medium layer that a process steps deposition materials is formed on the semiconductor substrate; Or adopt the compound medium layer of multiple processing step deposition materials formation respectively from the bottom to top on the semiconductor substrate.

Preferably, the thickness of described dielectric layer is

Optionally, when the material that described fuse adopts is polysilicon, the thickness of described fuse is

Optionally, when the material that described fuse adopts is metal, the material that described metal adopts trims metallic aluminium, copper, aluminium alloy or aluminium copper that resistance connects for connecting up described in being formed in, and the thickness of described fuse is

Preferably, described metal fuse deposition temperature is 240 ~ 260 DEG C, and deposit power is 7KW ~ 9KW, and chamber pressure is 2Torr ~ 4Torr, and the thickness of the fuse formed is

Optionally, when described removal part passivation layer, the material that described passivation layer and dielectric layer use respectively is have the large Selection radio of difference.

As seen from the above technical solution, the invention provides one and trim resistance, described in trim resistance and comprise semi-conductive substrate, one dielectric layer, is formed in described Semiconductor substrate, one fuse trims shape, be formed on described dielectric layer by fuse deposit, described fuse trims shape and has a fused area and two ends, has and change trimming structure and having a connection gasket respectively at the two ends that described fuse trims shape of current density size in described fused area, one passivation layer, being formed in described fuse trims on shape and dielectric layer, described passivation layer has and to trim trimming window and having a pressure point window of corresponding described connection gasket respectively of structure described in correspondence, with utilize fuse trim shape have in fused area change current density size trim structure, the effective cross section of the plain conductor in described fused area is made to amass place less than normal current convergence, current density is bigger than normal, easily there is electromigration and reach the characteristic of fusing point, under the prerequisite not increasing other process costs, produce and easily trim, fusing position is fixed, fused area is less, make simultaneously on fuse to trim window perforate less, what evaporated metal was less trims structure, efficiently solve and too trim, whole piece metal is trimmed, trim insufficient, trim the generation of failure.

Window is trimmed as the release window trimming structure place described in utilization, fix owing to trimming structure, evaporated metal amount is little, described release window can be made trimming zonule near striking point, make to trim ohmically pressure point window opening less, effective reduction, owing to trimming the excessive security risk such as metal residual, chemical residual caused of resistance upper shed, avoids and spills owing to evaporating insufficient metal caused and remain the contamination and risk that bring.Simultaneously simple owing to trimming, fusing position is fixed, and trim institute's energy requirement at every turn and be more or less the same, test program easily controls electric current and voltage, and the stability of test program and accuracy are well ensured.

Accompanying drawing explanation

Fig. 1 is the Facad structure schematic diagram that traditional metal fuse trims resistance manufacture method;

Fig. 2 to Fig. 4 is the Facad structure schematic diagram of traditional metal fuse when trimming the abnormal conditions that resistance manufacture method easily occurs;

Fig. 5 is the schematic flow sheet that the present invention trims the manufacture method of resistance;

The manufacture method trimming resistance of Fig. 6 to Figure 10 to be the embodiment of the present invention one curved shape be rectangular corners;

Figure 11 is the curved shape that Figure 10 is corresponding is the front plan view trimming resistance with turning;

Figure 12 is the curved shape that Figure 10 is corresponding is the citing trimming the front plan view of the relevant protection figure of resistance with turning;

Figure 13 and Figure 14 to be curved shape that Figure 10 is corresponding be there is turning trim the citing of resistance in the fuse widths size on separation both sides, turning;

Figure 16 be Figure 13 corresponding trim the window citing identical with the shape of fused area;

Figure 16 to Figure 20 is the embodiment of the present invention two curved shape is the manufacture method trimming resistance with arc;

Figure 21 is the curved shape that Figure 21 is corresponding is the front plan view trimming resistance with arc;

Figure 22 and Figure 23 is the curved shape that Figure 20 is corresponding is the citing trimming the front plan view of the relevant protection figure of resistance with arc;

The structural representation of Figure 24 to be arc that Figure 20 is corresponding be circular arc or ellipse arc

Figure 25 to be curved shape that Figure 20 is corresponding be there is arc trim the citing of resistance in the fuse widths size at arc place;

Figure 26 be Figure 25 corresponding trim the window citing identical with the shape of fused area;

Figure 27 to Figure 32 is the embodiment of the present invention three curved shape is the manufacture method trimming resistance with step;

Figure 33 is the curved shape that Figure 32 is corresponding is the front plan view trimming resistance with step;

Figure 34 to be curved shape that Figure 32 is corresponding be there is step trim the citing of resistance in the fuse widths size at step place;

Figure 35 is the front plan view trimming resistance with n step that Figure 32 is corresponding.

Embodiment

For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.

Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.

See Fig. 5, the invention provides a kind of manufacture method trimming resistance, comprise the steps:

S1: provide semi-conductive substrate, makes a dielectric layer on the semiconductor substrate;

S2: deposit fuse on described dielectric layer;

S3: the fused area choosing described fuse, remove the portions of fusing filaments in described fused area, expose described dielectric layer, the position of not removing fuse in described fused area formed one have change current density size trim structure, and the fuse two ends outside described fused area form a connection gasket respectively, thus formation fuse trims shape;

S4: trim shape and deposit passivation layer on the described dielectric layer exposed at described fuse, remove part passivation layer, formation trims window, described trim window expose described in trim structural fuse and described in trim dielectric layer below structural fuse, passivation layer on described connection gasket makes pressure point window, formed and trim resistance.

Embodiment one

See accompanying drawing 5, composition graphs 6 to 14 is described in detail to the technique trimming the manufacture method of resistance that curved shape provided by the invention is turning.

S1: provide semi-conductive substrate, makes a dielectric layer on the semiconductor substrate.

See Fig. 6, provide semi-conductive substrate 30, described Semiconductor substrate 30 makes a dielectric layer 31.

Wherein, described Semiconductor substrate 30 can be silicon substrate, germanium silicon substrate, III-group Ⅴ element compound substrate or well known to a person skilled in the art other semiconductive material substrate, and what adopt in the present embodiment is silicon substrate.More specifically, MOS field effect material or silicon compound etc. can be formed with in the Semiconductor substrate 30 adopted in the present embodiment.The described Semiconductor substrate provided for bipolar circuitry is generally the Semiconductor substrate in P (111) crystal orientation.

Wherein, the thickness of described dielectric layer 31 is if the thickness of described dielectric layer 31 is partially thin, due to factors such as technological fluctuations in subsequent etching process, described dielectric layer 31 is easily etched, if described dielectric layer 31 is most by quarter, described Semiconductor substrate 30 is by out exposed, pollutant easily enters into described Semiconductor substrate 30 from this region inner, has influence on electrically and integrity problem; If expose described Semiconductor substrate 30 simultaneously, the molten end points occurred in the termination trimming structure can collapse in described Semiconductor substrate 30 and form short circuit, trims the residue sputtered and is connected with described Semiconductor substrate 30, cause other potential risk.And the thickness of described dielectric layer 31 is partially thin, the parasitics in the below trimming structure can be caused obvious, affect the service behaviour of tube core, especially for the product that frequency requirement is higher.

In addition, the making of described dielectric layer 31 can be the single-layer medium layer that an independent process steps deposition materials completes, also can be multiple processing step compound medium layer of completing of deposition materials respectively from the bottom to top, if during the Material selec-tion metal that described fuse adopts, usually before doing metal wiring layer time, carry out the accumulation of described dielectric layer 31 thickness, do the resistance that trims that can ensure that subsequent technique obtains like this and there is no step difference, the evenness of guarantee fund subordinate side trimming below the metal of structure.

S2: deposit fuse on described dielectric layer.

See Fig. 7, deposit fuse 32 on described dielectric layer 31.

The material that described fuse uses is generally polysilicon and metal.When the material that described fuse adopts is polysilicon, need to do heavy doping polycrystalline at subsequent technique, and make all doping levels before metal line in obtained the trimming in fused area and can not open of subsequent technique, to ensure the precision of resistance, the thickness of described fuse is in most cases, select metal to do fuse materials, the metal for described fuse is all generally use the metallic link materials needed for wiring, completes the deposit of fuse materials during wiring metal deposit simultaneously.Because wiring metal can be first layer metal, second layer metal ... Deng multi-level, complete the deposit of described fuse in wiring simultaneously, therefore the metal that described fuse adopts is that the i.e. last layer of metal for connecting up, the thickness of described fuse generally exists for the metal connected that connects up

Preferably, in the present embodiment, when described fuse 32 adopts polysilicon, its material is Si (silicon); When described fuse 32 adopts metal, its material is Al (aluminium) or Cu (copper) or aluminium alloy or aluminium copper, and described metal fuse deposition temperature is 240 ~ 260 DEG C, and deposit power is 7KW ~ 9KW, chamber pressure is 2Torr ~ 4Torr, and the thickness of the fuse 32 formed is

S3: the fused area choosing described fuse, remove the portions of fusing filaments in described fused area, expose described dielectric layer, the position of not removing fuse in described fused area formed one have change current density size trim structure, and the fuse two ends outside described fused area form a connection gasket respectively, thus formation fuse trims shape.

See Fig. 8, choose a fused area of described fuse 32, by even glue, exposure, etch, the technique such as to remove photoresist, remove the portions of fusing filaments in described fused area, expose described dielectric layer 31a, the position of not removing fuse in described fused area forms a curved shape, described curved shape be have change current density size trim structure.The width of described curved shape is identical with the width of the fused area except described curved shape or narrow.When the narrowed width of described curved shape, the width of the fused area beyond described curved shape is greater than 1.5 times of the width of described curved shape.

Concrete, described dielectric layer 31 adopt thickness be the positive glue of 1.8um ~ 2.2um, toast before even glue, exposure, development, wet etching, beat glue, wet etching, dry etching before baking, dry etching, bath, dry method remove photoresist, reprocessing, remove the portions of fusing filaments in described fused area.What adopt in described wet etching process is aluminium corrosive liquid, and etching temperature is 29 ~ 31 DEG C, and the thickness that wet etching corrodes accounts for 20 ~ 35% of described fuse gross thickness; The etching gas adopted in described dry etching process mainly contains CF 4(four carbonization fluorine), BCl 3(boron chloride) and appropriate N 2(nitrogen) and O 2(oxygen) etc.

Concrete, the curved shape that the position of not removing fuse in described fused area makes is for having at least one turning 32a, therefore formed to have to change described in current density size and trim structure, with described turning for separation, the described width trimming structure both sides fuse can be consistent, also can select inconsistent.It should be noted that; in actual applications; can be as required; described turning can be a turning; also can be two turnings; or n turning (n is natural number), traditional trims the resistance thickness rectangle rule consistent with width as long as change, make to trim that turning appears in resistance is all the category that the present invention protects.

See Fig. 8, the fuse two ends outside described fused area form a connection gasket 32b respectively, thus formation fuse trims shape A.

Composition graphs 8 and Fig. 9, explain that described fuse trims the principle of shape, and point out the principle that the present embodiment one utilizes and method.According to the physical characteristic of conductor, when current density is not high, the relation of electric current and resistance defers to Ohm's law, but when current density is very high by (10 4more than A/cm2) time, the transmission of mobile charge carrier will cause the displacement gradually of metallic atom, and make metal occur cavity and pile up, this phenomenon is called electromigration.Be in the fuse of representative with aluminum, when current density is close to 5E10 4a/cm 2time electromigration will become obvious, due to electromigratory appearance, metallic atom is caused to shift out die locations originally gradually, make adjacent intercrystalline form space, make the long-pending reduction in the effective cross section of wire, current convergence is to line remainder, current density is increased, originally do not occur that electromigration had also appearred in the residue conductor part of electron transfer, what space was occurred is more, until wire cuts off.Theoretical according to the thermal conductance of conductor, because electronic impact metal ion can produce heat in the process of current flowing, and the size of heat and current density is directly proportional, current density is more large more concentrated, the heat produced is larger, when heat reaches the fusing point of metal, there is fusing evaporation in metal, also can explain by similar principle in heavy doping polycrystalline.

According to the simulation conclusion of conductor, when the trimming of reality, general employing be all instantaneous large-current condition, trim the conducting along with instantaneous large-current in process, there is cavity and accumulation in generation electromigration wire very short time while, also along with the sharply increase of heat, temperature raises rapidly and reaches the fusing point of fuse, there is electromigration sooner and reach fusing point in the place that current density is larger, the electric current of fused area transfers to again the contiguous region do not fused, in the region then do not fused, current density is increased sharply, also and then there is the rapid rising of electromigration and temperature, until whole fuse cross section fusing.

Concrete, according to physical characteristic and the simulation conclusion of conductor, trend and the density of electric current there occurs change, electric current is electron transmission one by one, when in fused area to trim structure be turning time, the corner that is delivered in of electric current gathers, and at turning, internal current density is maximum.For two-dimensional analog, if taking aluminum as the fuse widths W of representative and thickness is 1um, during angle theta=90 degree at two ends, turning, when being 10mA by electric current, non-corner region L1 and L2 current density are at 1E10 6a/cm 2below, inside turning, the current density of Rconer reaches 5E10 6a/cm 2left and right.When being 100mA by electric current, non-corner region L1 and L2 current density are at 9E10 6a/cm 2below, inside turning, the current density of Rconer reaches 1.8E10 7a/cm 2left and right.

Concrete, turning is less, and current density is larger.For two-dimensional analog, if taking aluminum as the fuse widths of representative and thickness is 1um, when the angle theta at two ends, turning is respectively 45 degree, 90 degree and 135 degree, when being all 100mA by electric current, non-corner region L1 and L2 current density are at 9E10 6a/cm 2below, but angle theta is 135 degree time turning inside the current density of Rconer reach 1E10 7a/cm 2left and right, when angle theta is 90 degree, inside turning, the current density of Rconer reaches 1.8E10 7a/cm 2left and right, when angle theta is 45 degree, inside turning, the current density of Rconer reaches 2.5E10 especially 7a/cm 2left and right.As can be seen here, when angle theta more hour, inside turning, the current density of Rconer is larger, also easily fuses.But when angle theta is very little, the distance taking turning as two sections of aluminum metal on the both sides of separation is shorter, when there is fusing, the two ends aluminum metal on both sides is all shrunk to spherical high-temperature liquid state, then two ends aluminum metal easily again merges again and causes connecting, the material sputtered also easily and the fuse conducting do not trimmed, thus causes trimming failure.When angle theta is bigger than normal, trims metal and tend to straight line, resistance trends towards evenly, and corner's resistance is bigger than normal not obvious, is not easy to realize having corner's fusing in fused area.So in this implementation column, be that the angle theta of the both sides fuse of separation makes 1-179 degree by described turning, and preferably 45 ~ 135 degree.

S4: trim shape and deposit passivation layer on the described dielectric layer exposed at described fuse, remove part passivation layer, formation trims window, described trim window expose described in trim structural fuse and described in trim dielectric layer below structural fuse, passivation layer on described connection gasket makes pressure point window, formed and trim resistance.

See Figure 10, shape and deposit passivation layer 33 on the described dielectric layer 31 exposed is trimmed at described fuse, described passivation layer 33 covers described fuse and trims in shape afterwards for 33a, it is outer due to step difference that described fuse trims shape, it is 33b that described passivation layer is deposited on described dielectric layer, by even glue, exposure, etching, the technique such as to remove photoresist, go out partial deactivation layer 33, formation trims window 34a, described trim window 34a need expose described in trim structure and with the described dielectric layer 31 trimming structure and be close to, passivation layer 33 on each described connection gasket 32b makes pressure point window 34b, thus formation trims resistance.

Concrete, by the described window 34a that trims, turning 32a near zone is opened, namely open needs described in contain and trim structural metal and non-ly trim structural region, as shown in Figure 10 for etching removes the section incline structure schematic diagram after part passivation layer, trim window 34a described in Figure 10 to open to expose and trim structural metal and corner 32a, it is non-that to trim structural region be open passivation layer quarter, the dielectric layer 31a below structural metal is trimmed described in exposing, enough being evaporated of metal fuse energy of structure place fusing is trimmed during to make to trim, release energy.

Concrete, the described large I trimming window 34a adjusts accordingly according to the size of corner's both sides fuse angle theta, and it is larger that the angle theta at described turning makes, described in trim the larger of window 34a making, it is less that the angle theta at described turning makes, described in trim that window 34a makes less.

Concrete, passivation layer 33 can be oxide layer, or mixes the oxide layer of phosphorus, boron, also can be that silicon nitride etc. is as protective layer.When trimming window described in etching removal part passivation layer is formed, the dielectric layer material used under the material that etch application needs to ensure that described passivation uses and described fuse materials has higher Selection radio, avoid passivated etching may carve described to the greatest extent dielectric layer 31 and expose described Semiconductor substrate 30, later stage trim rear described in trim structure place fuse splash and Semiconductor substrate 30 conducting, cause pollutant, security risk that corrosive liquid causes.

Further, Figure 11 is the curved shape that Figure 10 is corresponding is the front plan view trimming resistance with turning.

Further; Figure 12 is the curved shape that Figure 10 is corresponding is the citing trimming the front plan view of the relevant protection figure of resistance with turning, and all the other are designed the resistance that trims with corner shape also belong to scope according to design, plate-making business, manufacturer etc.

Further, Figure 13 and Figure 14 to be curved shape that Figure 10 is corresponding be there is turning trim the citing of resistance in the fuse widths size on separation both sides, turning, take rectangular corners as separation, one side fuse L1 width W 1 of rectangular corners narrows for fuse widths, the another side fuse L2 width W 2 of rectangular corners is regular fuse widths, wherein W2 > W1, the W1 of preferred W2 > 1.5 times.Described W2 > W1 object be make to have rectangular corners trim resistance is less than another side fuse L2 width W 2 in the width W 1 of one side fuse L1 at turning, according to the characteristic of electric current, when effective cross section narrows, current density can become large, is more conducive to like this make fuse occur electromigration and reach the object of fuse failure.Therefore, for two-dimensional analog, in Figure 11 and Figure 13, if taking aluminum as the fuse widths of representative and thickness is 1um, the angle theta at turning is respectively 90 degree, and when being all 100mA by electric current, in Figure 11, the current density of non-corner region L1 and L2 is all at 9E10 6a/cm 2below, inside turning, the current density of Rconer reaches 1E10 7a/cm 2left and right, but in fig. 13, the current density of the non-corner region L2 in non-corner region L2 with Figure 11 is the same all at 9E10 6a/cm 2below, but Rconer is near the region of fuse L1 narrowed width inside turning, and the current density of Rconer reaches 2.3E10 7a/cm 2left and right, according to fuse current density and operating chacteristics, optionally more can concentrate on the side of rectangular corners by electric current, or a certain section, the position trimmed can be made so more to limit, more easily trim, more easily programme, trim and pollute less, trim more stable.

Figure 15 is the window that trims shown in Figure 13 is less a kind of structure, it is wherein said that to trim window 34a identical with the shape of fused area 32a, but described in trim window 34a and contain residence and state fused area 32a, and the area trimming window 34a described in requiring is more than or equal to fused area 32a, preferably, the area trimming window 34a described in is the twice of fused area 32a.The object done like this is that the caused unreliability risk such as the metal residual that pressure point windowing can be caused and chemical residual is down to minimum.

Embodiment two

See accompanying drawing 5, be that the technique trimming the manufacture method of resistance with arc is described in detail in conjunction with Figure 16 to 26 to curved shape provided by the invention.

Step S1 (see accompanying drawing 16) in the present embodiment and step S2 (see accompanying drawing 17) refers to the step S1 in embodiment one and the content in S2, and this is no longer going to repeat them.

Be that step S3's and step S4 is different from the difference of embodiment one in the present embodiment.The concrete difference of step S3 is as follows:

See Figure 18 and Figure 19, Figure 19 is the front plan view of Figure 18, the curved shape that the position of not removing fuse in this region makes is for having at least one arc 32a, therefore formed to have to change described in current density size and trim structure, described arc is made there is the circular arc or ellipse arc that radian θ is 1-359 degree, preferred circular arc, the preferably radian of 90 ~ 180 degree, the width W of described arc has the width identical with described curved shape.It should be noted that; in actual applications; can be as required; described arc can be one section of arc; also can be two sections of arcs; or n section arc (n is natural number), traditional trims the resistance thickness rectangle rule consistent with width as long as change, make to trim that arc appears in resistance is all the category that the present invention protects.

In addition, in the present embodiment, equally can according to the physical characteristic of the conductor of setting forth in embodiment one and simulation conclusion, in big current situation, electric current is electron transmission one by one, when in fused area to trim structure be arc time, regular rectangular shape is different from actuated position sense of current and conduction, nearest due to arc shaped inside, the arc shaped inside that is delivered in of electric current gathers, now the current density of fuse inside the maximum fuse of arc shaped inside current density can be the several times even decades of times in outside, according to wire electromigration and thermoelectric effect, first fuse fuses at arc shaped inside, when inner side, fusing after-current is delivered to the wire that same cross section do not fuse, the wire originally do not fused under the condition of big current also there occurs electromigration until fusing, reach the result trimmed.

And other related contents of step S3 in the present embodiment and technological parameter refer to related content and the technological parameter of the step S3 in embodiment one, no longer one repeat at this.

In the present embodiment, step S4 and the step S4's in embodiment one is different specific as follows:

By the described window 34a that trims, arc 32a near zone is opened, namely open needs described in contain and trim structural metal and non-ly trim structural region, as shown in figure 19 for etching removes the side plan structure schematic diagram after part passivation layer, trim window 34a described in Figure 20 to open to expose and trim structural metal and arc place 32a, it is non-that to trim structural region be open passivation layer quarter, the dielectric layer 31a below structural metal is trimmed described in exposing, trim enough being evaporated of metal fuse energy of structure place fusing during to make to trim, release energy.

The described large I trimming window 34a adjusts accordingly according to the size of the radian θ of arc, it is larger that the radian θ of described arc makes, described trim that window 34a makes larger, it is less that the radian θ of described arc makes, described in trim the less of window 34a making.

Further, Figure 21 for Figure 20 corresponding described in trim resistance the curved shape that formed of manufacture method be the front plan view trimming resistance with arc.Wherein saidly trim after window 34a opens, by the dielectric layer 31a below the structure of the structure and described arc 32a of exposing arc 32a, corresponding with the position in side cross-sectional view 20 respectively.

Further; Figure 22 and Figure 23 is the curved shape that Figure 20 is corresponding is the citing trimming the front plan view of the relevant protection figure of resistance with arc, and all the other are designed the resistance that trims with corner shape also belong to scope according to design, plate-making business, manufacturer etc.

Further, the structural representation of Figure 24 to be the arc that Figure 20 is corresponding be circular arc or ellipse arc.D is the distance that fuse part that described connection gasket 32b is corresponding assigns to two fuse centers, and d1 is the distance of arc S1 peak to curved bottom, and d2 is the distance of arc S2 peak to curved bottom, and d3 is the distance of arc S3 peak to curved bottom.Wherein as d2=d, according to geometric definition, now the radian θ of arc is 180 degree, and as d1 < d, the radian θ of arc is less than 180 degree, and as d3 > d, the radian θ of arc becomes oval.

Further, Figure 25 to be curved shape that Figure 20 is corresponding be there is arc trim the citing of resistance in the fuse widths size at arc place, the width of wherein said arc is W1, the width of the fused area beyond described arc is regular rectangular shape width W, wherein W > W1, the W1 of preferred W > 1.5 times.Described W > W1 object makes to trim resistance is less than the fused area except described arc width W in the width W 1 of described arc, according to the characteristic of electric current, when effective cross section narrows, current density can become large, is more conducive to like this make fuse occur electromigration and reach the object of fuse failure.

Figure 26 is the window that trims that Figure 25 is corresponding is less a kind of structure, it is wherein said that to trim window 34a identical with the shape of fused area 32a, but described in trim window 34a and contain residence and state fused area 32a, and the area trimming window 34a described in requiring is more than or equal to fused area 32a, preferably, the area trimming window 34a described in is the twice of fused area 32a.The object done like this is that the caused unreliability risk such as the metal residual that pressure point windowing can be caused and chemical residual is down to minimum.

And other related contents of step S4 in the present embodiment and technological parameter refer to related content and the technological parameter of the step S4 in embodiment one, no longer one repeat at this.

Embodiment three

See accompanying drawing 5, be that the technique trimming the manufacture method of resistance with step is described in detail in conjunction with Figure 27 to 32 to curved shape provided by the invention.

Step S1 (see accompanying drawing 27) in the present embodiment refers to the content in the step S1 in embodiment one, and this is no longer going to repeat them.

Be that step S2, step S3 and step S4's is different from the difference of embodiment one in the present embodiment.The concrete difference of step S2 is as follows:

See Figure 28, before deposit fuse 32, carry out the technique such as photoetching, etching to described dielectric layer 31, etch-stop is stayed in described dielectric layer 31, makes described dielectric layer 31 form the shape with at least one ladder 31a, and the ladder height required for described dielectric layer 31 and ladder number can be determined, the number of described ladder 31a can be one, two, even n, preferably, the height X of described ladder 31a is more than or equal to 0.1 times of the fuse thickness of subsequent technique deposit.

In the present embodiment, step S3 and the step S3's in embodiment one is different specific as follows:

See Figure 29, after fuse 32 described in deposit, choosing the fuse 32 covered on described ladder 31a is fused area, still remove the portions of fusing filaments in described fused area, the curved shape that the position of not removing fuse in described fused area makes is step 32a, see Figure 30, continue to remove the portions of fusing filaments in described fused area, expose described dielectric layer 31, described step 32a place namely formed have change current density size trim structure, the height of described step 32a is also for being more than or equal to 0.1 times of described fuse thickness.

The front plan view of shape is trimmed see Figure 31, Figure 31 fuse that to be curved shape that Figure 30 is corresponding be has a step.

In the present embodiment, step S4 and the step S4's in embodiment one is different specific as follows:

Be depicted as etching see Figure 32, Figure 32 and remove the side structure schematic diagram after part passivation layer, passivation layer 33 described in deposit.By the described window 34a that trims, step 32a near zone is opened, namely open needs described in contain and trim structural metal and non-ly trim structural region, trim window 34a described in Figure 32 to open to expose and trim structural metal and step place 32a, it is non-that to trim structural region be open passivation layer quarter, the dielectric layer 31a below structural metal is trimmed described in exposing, trim enough being evaporated of metal fuse energy of structure place fusing during to make to trim, release energy.

The described large I trimming window 34a adjusts accordingly according to the size of the surf zone of step 32a, it is larger that the surf zone of described step 32a makes, described trim that window 34a makes larger, it is less that the surf zone of described step 32a makes, described in trim the less of window 34a making.

Further, Figure 33 is the curved shape that Figure 32 is corresponding is the front plan view trimming resistance with step.Wherein saidly trim after window 34a opens, by the dielectric layer 31a below the structure of the structure and described step 32a of exposing step 32a, corresponding with the position in side cross-sectional view 32 respectively.

Further, Figure 34 to be curved shape that Figure 32 is corresponding be there is step trim the citing of resistance in the fuse widths size at step place, width wherein at step place is W1, the width of the fused area beyond described step is regular rectangular shape width W, wherein W > W1, the W1 of preferred W > 1.5 times.Described W > W1 object makes to trim resistance is less than the fused area except described step width W in the width W 1 of described step, according to the characteristic of electric current, when effective cross section narrows, current density can become large, is more conducive to like this make fuse occur electromigration and reach the object of fuse failure.

Further, Figure 35 is the curved shape that Figure 32 is corresponding is the front plan view trimming resistance with n step, and all the other are designed the resistance that trims with step shape also belong to scope according to design, plate-making business, manufacturer etc.

And other related contents of step S4 in the present embodiment and technological parameter refer to related content and the technological parameter of the step S4 in embodiment one, no longer one repeat at this.

The present invention is applicable to commonly in semiconductor manufacturing trim resistance manufacture method, comprises fuse, Zener diode and film resistor laser-adjusting etc. and trims resistance manufacture method.The present invention is also applicable to commonly in semiconductor manufacturing non-ly trim resistance manufacture method.

In addition, the manufacture method utilizing the present invention to trim resistance makes special product structure and device architecture, is also belong to scope.

Make one by the manufacture method trimming resistance provided by the invention and trim resistance, in conjunction with Figure 10, Figure 20 and Figure 32, known, described in trim resistance and comprise:

Semi-conductive substrate 30; One dielectric layer 31, is formed in described Semiconductor substrate 30; One fuse trims shape A (see Fig. 9, Figure 19 and Figure 31), be formed on described dielectric layer 31 by fuse 32 deposit, described fuse trims shape A and has a fused area and two ends, has and change trimming structure and having a connection gasket 32b respectively at the two ends that described fuse trims shape of current density size in described fused area;

One passivation layer 33, is formed in described fuse and trims on shape A and dielectric layer 31, and described passivation layer 33 has and to trim trimming window 34a and having the pressure point window 34b of corresponding described connection gasket 32b respectively of structure described in correspondence.

The present invention utilize fuse trim shape have in fused area change current density size trim structure for curved shape, the effective cross section of the plain conductor in described fused area is made to amass place less than normal current convergence, current density is bigger than normal, easily there is electromigration and reach the characteristic of fusing point, under the prerequisite not increasing other process costs, produce and easily trim, fusing position is fixed, fused area is less, make simultaneously on fuse to trim window perforate less, what evaporated metal was less trims structure, efficiently solve and too trim, whole piece metal is trimmed, trim insufficient, trim the generation of failure.

Window is trimmed as the release window trimming structure place described in utilization, fix owing to trimming structure, evaporated metal amount is little, described release window can be made trimming zonule near striking point, make to trim ohmically pressure point window opening less, effective reduction, owing to trimming the excessive security risk such as metal residual, chemical residual caused of resistance upper shed, avoids and spills owing to evaporating insufficient metal caused and remain the contamination and risk that bring.Simultaneously simple owing to trimming, fusing position is fixed, and trim institute's energy requirement at every turn and be more or less the same, test program easily controls electric current and voltage, and the stability of test program and accuracy are well ensured.

Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.

Claims (26)

1. trim a resistance, comprising:
Semi-conductive substrate;
One dielectric layer, is formed in described Semiconductor substrate;
One fuse trims shape, be formed on described dielectric layer by fuse deposit, described fuse trims shape and has a fused area and two ends, have in described fused area and change trimming structure and at the two ends that described fuse trims shape, there is a connection gasket respectively of current density size, described in trim structure be curved shape;
One passivation layer, is formed in described fuse and trims on shape and dielectric layer, and described passivation layer has and to trim trimming window and having a pressure point window of corresponding described connection gasket respectively of structure described in correspondence;
Wherein, described in trim window and contain residence and state fused area, and described in trim the shape of window identical with the shape of fused area, described in trim the twice that window size is more than or equal to fused area.
2. trim resistance as claimed in claim 1, it is characterized in that, the width of described curved shape is identical with the width of the fused area except described curved shape or narrow.
3. trim resistance as claimed in claim 2, it is characterized in that, when the narrowed width of described curved shape, the width of the fused area beyond described curved shape is greater than 1.5 times of the width of described curved shape.
4. trim resistance as claimed in claim 3, it is characterized in that, described curved shape is at least one turning, and the angle of the both sides fuse being separation with each described turning is 1-179 degree.
5. trim resistance as claimed in claim 4, it is characterized in that, the width of the both sides fuse being separation with described turning is identical or not identical.
6. trim resistance as claimed in claim 3, it is characterized in that, described curved shape is at least one arc, and every section of described arc is the radian of circular arc or ellipse arc is 1-359 degree.
7. trim resistance as claimed in claim 3, it is characterized in that, described dielectric layer has at least one ladder, and the described curved shape be covered on each described ladder is a step.
8. trim resistance as claimed in claim 7, it is characterized in that, the height of described step is more than or equal to 0.1 times of described fuse thickness.
9. trim resistance as claimed in claim 1, it is characterized in that, described dielectric layer is single-layer medium layer or compound medium layer.
10. trim resistance as claimed in claim 1, it is characterized in that, the thickness of described dielectric layer is
11. trim resistance as claimed in claim 1, it is characterized in that, when the material that described fuse adopts is polysilicon, the thickness of described fuse is
12. trim resistance as claimed in claim 1, it is characterized in that, when the material that described fuse adopts is metal, the material that described metal adopts trims metallic aluminium, copper, aluminium alloy or aluminium copper that resistance connects for connecting up described in being formed in, and the thickness of described fuse is
13. trim resistance as claimed in claim 1, it is characterized in that, the material that described passivation layer and dielectric layer use is have the large Selection radio of difference.
14. 1 kinds of manufacture methods trimming resistance, comprise the steps:
Semi-conductive substrate is provided, makes a dielectric layer on the semiconductor substrate;
Deposit fuse on described dielectric layer;
Choose a fused area of described fuse, remove the portions of fusing filaments in described fused area, expose described dielectric layer, the position of not removing fuse in described fused area formed one have change current density size trim structure, and the fuse two ends outside described fused area form a connection gasket respectively, thus form fuse and trim shape, described in trim structure be curved shape;
Shape and deposit passivation layer on the described dielectric layer exposed is trimmed at described fuse, remove part passivation layer, formation trims window, described trim window expose described in trim structural fuse and described in trim dielectric layer below structural fuse, passivation layer on described connection gasket makes pressure point window, formed and trim resistance;
Wherein, described in trim window and contain residence and state fused area, and described in trim the shape of window identical with the shape of fused area, described in trim the twice that window size is more than or equal to fused area.
15. manufacture methods trimming resistance as claimed in claim 14, it is characterized in that, the width of described curved shape is identical with the width of the fused area except described curved shape or narrow.
16. manufacture methods trimming resistance as claimed in claim 15, it is characterized in that, when the narrowed width of described curved shape, the width of the fused area beyond described curved shape is greater than 1.5 times of the width of described curved shape.
17. manufacture methods trimming resistance as claimed in claim 16, it is characterized in that, the curved shape that the position of not removing fuse in described fused area makes is for having at least one turning, described corner formed have change current density size trim structure, be the angle that 1-179 degree made by the both sides fuse of separation by described turning.
18. manufacture methods trimming resistance as claimed in claim 17, it is characterized in that, be that the width of the both sides fuse of separation is made identical or not identical by described turning.
19. manufacture methods trimming resistance as claimed in claim 16, it is characterized in that, the curved shape that the position of not removing fuse in described fused area makes is for having at least one arc, formed at described arc place have change current density size trim structure, described arc is made there is the circular arc or ellipse arc that radian is 1-359 degree.
20. manufacture methods trimming resistance as claimed in claim 16, it is characterized in that, before fuse described in deposit, described dielectric layer is formed the shape with at least one ladder, after fuse described in deposit, choosing the fuse covered on described ladder is fused area, the curved shape that the position of not removing fuse in described fused area makes for having step, described step place formed have change current density size trim structure.
21. manufacture methods trimming resistance as claimed in claim 20, it is characterized in that, the height of described step is more than or equal to 0.1 times of described fuse thickness.
22. manufacture methods trimming resistance as claimed in claim 14, it is characterized in that, the step making a dielectric layer is on the semiconductor substrate: adopt the single-layer medium layer that a process steps deposition materials is formed on the semiconductor substrate; Or adopt the compound medium layer of multiple processing step deposition materials formation respectively from the bottom to top on the semiconductor substrate.
23. manufacture methods trimming resistance as claimed in claim 14, it is characterized in that, the thickness of described dielectric layer is
24. manufacture methods trimming resistance as claimed in claim 14, is characterized in that, when the material that described fuse adopts is polysilicon, the thickness of described fuse is
25. manufacture methods trimming resistance as claimed in claim 14, it is characterized in that, when the material that described fuse adopts is metal, the material that described metal adopts trims metallic aluminium, copper, aluminium alloy or aluminium copper that resistance connects for connecting up described in being formed in, and the thickness of described fuse is
26. manufacture methods trimming resistance as claimed in claim 14, it is characterized in that, when described removal part passivation layer, the material that described passivation layer and dielectric layer use respectively is have the large Selection radio of difference.
CN201210576025.7A 2012-12-25 2012-12-25 One trims resistance and manufacture method thereof CN103094250B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210576025.7A CN103094250B (en) 2012-12-25 2012-12-25 One trims resistance and manufacture method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210576025.7A CN103094250B (en) 2012-12-25 2012-12-25 One trims resistance and manufacture method thereof

Publications (2)

Publication Number Publication Date
CN103094250A CN103094250A (en) 2013-05-08
CN103094250B true CN103094250B (en) 2015-12-23

Family

ID=48206647

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210576025.7A CN103094250B (en) 2012-12-25 2012-12-25 One trims resistance and manufacture method thereof

Country Status (1)

Country Link
CN (1) CN103094250B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106465543A (en) * 2014-06-26 2017-02-22 株式会社村田制作所 Electronic device
CN108878404A (en) * 2018-06-29 2018-11-23 上海华虹宏力半导体制造有限公司 Chip Internal fuse structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420456A (en) * 1992-04-02 1995-05-30 International Business Machines Corporation ZAG fuse for reduced blow-current application
CN1212457A (en) * 1997-09-19 1999-03-31 西门子公司 Improved techniques for forming electrically blowable fuses on integrated circuit
CN1577831A (en) * 2003-06-26 2005-02-09 恩益禧电子股份有限公司 Semiconductor device
US20070210890A1 (en) * 2006-03-09 2007-09-13 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
CN102130092A (en) * 2010-01-20 2011-07-20 中芯国际集成电路制造(上海)有限公司 Fuse device and preparation method thereof
CN102263011A (en) * 2010-05-26 2011-11-30 无锡华润上华半导体有限公司 Semiconductor structure manufacturing method
CN102299094A (en) * 2010-06-24 2011-12-28 无锡华润上华半导体有限公司 manufacturing method of fuse wire structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102110640A (en) * 2009-12-24 2011-06-29 北大方正集团有限公司 Method for treating metal fuse of single aluminium

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420456A (en) * 1992-04-02 1995-05-30 International Business Machines Corporation ZAG fuse for reduced blow-current application
CN1212457A (en) * 1997-09-19 1999-03-31 西门子公司 Improved techniques for forming electrically blowable fuses on integrated circuit
CN1577831A (en) * 2003-06-26 2005-02-09 恩益禧电子股份有限公司 Semiconductor device
US20070210890A1 (en) * 2006-03-09 2007-09-13 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
CN102130092A (en) * 2010-01-20 2011-07-20 中芯国际集成电路制造(上海)有限公司 Fuse device and preparation method thereof
CN102263011A (en) * 2010-05-26 2011-11-30 无锡华润上华半导体有限公司 Semiconductor structure manufacturing method
CN102299094A (en) * 2010-06-24 2011-12-28 无锡华润上华半导体有限公司 manufacturing method of fuse wire structure

Also Published As

Publication number Publication date
CN103094250A (en) 2013-05-08

Similar Documents

Publication Publication Date Title
US9059171B2 (en) Electrical fuse and method of making
TWI515889B (en) Decoupling capacitor device, soc device, and method for forming a process-compatible decoupling capacitor
US9360525B2 (en) Stacked via structure for metal fuse applications
US9117802B2 (en) Electronic device including a feature in an opening
US9893011B2 (en) Back-end electrically programmable fuse
US5510629A (en) Multilayer antifuse with intermediate spacer layer
CN100505236C (en) Electrically reprogrammable fuse device, its manufacturing method and integrated circuit device
CN102064155B (en) Semiconductor device and manufacturing method thereof
JP4185338B2 (en) Vertical nano fuse and nano resistance circuit element
US6956277B1 (en) Diode junction poly fuse
US6864124B2 (en) Method of forming a fuse
CN100481435C (en) Reprogrammable fuse structure and method
US7460003B2 (en) Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7656005B2 (en) Electrically programmable π-shaped fuse structures and methods of fabrication thereof
CN100397601C (en) Method for manufacturing semiconductor device and semiconductor device
CN100524726C (en) Semiconductor structure and its manufacturing method
DE112010003252B4 (en) Ribbed anti-fuse with reduced programming voltage and method of making same
US7598127B2 (en) Nanotube fuse structure
US8610244B2 (en) Layered structure with fuse
KR100808997B1 (en) Fuse and method disconnecting the fuse
US6518643B2 (en) Tri-layer dielectric fuse cap for laser deletion
US6633055B2 (en) Electronic fuse structure and method of manufacturing
TW523872B (en) Post-fuse blow corrosion prevention structure for copper fuses
US4809044A (en) Thin film overvoltage protection devices
US7557424B2 (en) Reversible electric fuse and antifuse structures for semiconductor devices

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant