CN103094104B - Bipolar horizontal plug and play (PNP) tube manufacture process using phosphorus buried layer and concentrated phosphorus buried technique - Google Patents
Bipolar horizontal plug and play (PNP) tube manufacture process using phosphorus buried layer and concentrated phosphorus buried technique Download PDFInfo
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- CN103094104B CN103094104B CN201210535643.7A CN201210535643A CN103094104B CN 103094104 B CN103094104 B CN 103094104B CN 201210535643 A CN201210535643 A CN 201210535643A CN 103094104 B CN103094104 B CN 103094104B
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Abstract
The invention discloses a bipolar horizontal plug and play (PNP) tube manufacture process using a phosphorus buried layer and the concentrated phosphorus buried technique. The manufacture process comprises the following steps of feeding, oxidizing, photoetching the phosphorus buried layer, injecting, annealing the phosphorus buried layer, photoetching a boron buried layer, injecting, photoetching a concentrated phosphorus buried layer, injecting, annealing the concentrated phosphorus buried layer, extending in an N shape, diffusing deep phosphorus, diffusing in an isolation mode, injecting a base region, injecting concentrated boron, annealing the base region, diffusing in an N+ mode, photoetching a contact hole, corroding, aluminum sputtering primarily, depositing media, photoetching a through hole, aluminum sputtering secondarily, photoetching a press point and etching. The bipolar horizontal PNP tube manufacture processing using the phosphorus buried layer and the concentrated phosphorus buried technique reduces the size by 35% compared with using the stibium buried layer technique so as to greatly reduce design and extension cost of microelectronic products, improve product market competitiveness and market share and push international integrated circuit to develop towards high quality, low carbon and environmental protection.
Description
Technical field
The present invention relates to a kind of bipolar Semi-active suspension manufacture craft adopting phosphorus buried regions and dense phosphorus buried regions technology, belong to semiconductor fabrication techniques field.
Background technology
Along with the development of international semiconductor technology and the cost of raw material rise steadily, various countries are more and more fierce for the competition of integrated circuit fields, also more and more higher to the performance specification of integrated circuit, always wish to make function admirable on chip little as far as possible and the less circuit of power consumption.In integrated circuits, all devices share an electric substrate, usually isolate bipolar device by reverse biased pn junction, thus there is the ghost effect that some are potential.Meanwhile, at integrated more than one device of single epi region, more possible ghost effect is also created.These ghost effect great majority occur with undesirable PNP or NPN transistor, and circuit can not benefit from these spurious element devices.On the contrary, when these spurious element devices normally work at circuit or have an external pulse conducting, extra electric current and power loss is just created.If these electric currents are very little, so circuit exists not too responsive comparatively speaking to it, and these leakage currents can only produce slight parameter drift.If electric current is very large, forms bolt lock structure (as shown in Figure 1), circuit can be made normally to work, even if also not all right after removing trigger condition, only could recover normal work when interrupting power supply.Even breech lock is by the overheated physical damage causing integrated circuit due to excessive power-consumption and generation, makes circuit permanent failure.Therefore, the existence of parasitic PNP or parasitic NPN pipe, not only makes power excess loss, causes the wasting of resources, more likely affects the normal use of circuit, even thoroughly damages circuit.
The effective measures reducing parasitic PNP effect in Semi-active suspension at present both at home and abroad adopt antimony buried regions and add dark phosphoric diffusion technology.Fact proved, Semi-active suspension and the parasitic PNP effect between substrate and isolation channel can be effectively reduced like this.But because antimony diffusion coefficient is less, cause antimony buried regions local width less; And when dark phosphorus diffuses to darker, its volume and concentration are all less, therefore narrower with antimony buried regions contact position.The existence of above two bottleneck factor, just limits parasitic PNP effect and reduces further, thus may affect performance and the use of circuit.
Conventional bipolar Semi-active suspension adopts antimony buried regions and dark phosphorus diffusion, technological process as shown in Figure 2, under this technique platform, the Semi-active suspension structure of final formation as shown in Figure 4, its basic single tube parameter is as follows: β=30 ~ 50/Ic=0.25mA, BVceo=20 ~ 25V, BVcbo=40 ~ 45V, BVebo=50 ~ 65V.
Summary of the invention
The defect that the present invention seeks to exist for prior art provides a kind of parasitic PNP effect in order to reduce in Semi-active suspension, improves circuit service efficiency and reliability.Adopt the ambipolar Semi-active suspension manufacture craft of phosphorus buried regions and dense phosphorus buried regions technology, namely in the bipolar process making Semi-active suspension, adopt phosphorus buried regions and dense phosphorus buried regions technology.
The present invention for achieving the above object, adopts following technical scheme: from chip area, and adopt phosphorus buried regions and dense phosphorus buried regions technology to adopt antimony buried regions technology chip area size identical with routine, do not need additionally to increase chip area, only technical process is different.
I takes charge of the material piece adopting phosphorus buried regions and dense phosphorus buried regions technique to make Semi-active suspension is P type <100> crystal orientation, and resistivity is 15 ~ 25 Ω cm, and as shown in Figure 3, this processing step is as follows in technological process:
1) feed intake: adopt P type substrate, crystal orientation is <100>;
2) be oxidized: in substrate surface oxidation, oxidated layer thickness is 7000 ~ 8000;
3) photoetching of phosphorus buried regions, injection: inject phosphorus at position, Semi-active suspension buried regions district, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 6E14 ~ 8E14 Atoms/cm
2, impurity is phosphorus;
4) phosphorus buried regions annealing: annealing temperature is 1100 DEG C ~ 1200 DEG C, first logical 300 ~ 320 minutes nitrogen, more logical 90 ~ 110 minutes oxygen;
5) photoetching of boron buried regions, injection: inject boron at position, Semi-active suspension boron buried district, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 2E14 ~ 4E14 Atoms/cm
2, impurity is boron;
6) dense phosphorus buried regions photoetching, injection: inject dense phosphorus at position, Semi-active suspension base, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 2E15 ~ 3E15 Atoms/cm
2, impurity is phosphorus;
7) dense phosphorus buried regions annealing: annealing temperature 1100 DEG C ~ 1150 DEG C, passes into 80 ~ 100 minutes nitrogen;
8) N-type extension: in position, Semi-active suspension base extension, thickness 7 ~ 9 microns, resistivity 1 ~ 3 Ω cm;
9) dark phosphorus diffusion: diffusion position is PNP pipe base, dark phosphorus pre-expansion 1050 DEG C ~ 1080 DEG C, first logical 3 ~ 5 minutes nitrogen and oxygen, then logical 15 ~ 25 minutes phosphorus sources, finally logical 46 minutes nitrogen and oxygen; It is 1100 DEG C ~ 1150 DEG C that dark phosphorus expands again, first logical 3 ~ 5 minutes oxygen, then logical 70 ~ 80 minutes hydrogen and oxygen, finally logical 4 ~ 6 minutes oxygen;
10) isolation diffusion: diffusion position is isolation channel, object is to logical with boron buried regions, isolation pre-expansion is 800 DEG C ~ 950 DEG C, first logical 5 ~ 8 minutes nitrogen and oxygen, then logical 15 ~ 20 minutes boron sources, finally logical 8 ~ 12 minutes nitrogen and oxygen, it is 1150 DEG C ~ 1200 DEG C that isolation is expanded again, passes into 10 ~ 12 minutes nitrogen and oxygen;
11) base injects: injection position is base, resistance area, and base Implantation Energy is 50KeV ~ 80 KeV, and dosage is 5E14 ~ 8E14 Atoms/cm
2, impurity is boron;
12) dense boron injects: injection zone is Semi-active suspension emitter region, collector region, and Implantation Energy is 60KeV, and dosage is 8.0E14 Atoms/cm
2, impurity is boron;
13) base annealing: annealing temperature 1050 DEG C ~ 1100 DEG C, passes into 40 ~ 60 minutes nitrogen,
14) N+ diffusion: diffusion position is Semi-active suspension base ohmic contact district, and it is 850 DEG C ~ 950 DEG C that N+ gives expansion, first logical 3 ~ 5 minutes nitrogen and oxygen, then logical 9 ~ 15 minutes phosphorus sources, finally logical 4 ~ 6 minutes nitrogen and oxygen; It is 1000 DEG C ~ 1150 DEG C that N+ expands again, first logical 3 ~ 5 minutes oxygen, then logical 30 ~ 50 minutes hydrogen and oxygen, finally logical 4 ~ 6 minutes oxygen;
15) contact hole photoetching, corrosion: the method etching adopting wet method, to form good surface state;
16) sputtered aluminum: sputter 1.5 ~ 2.5 microns of aluminium copper silicon over the substrate surface;
17) dielectric deposition: deposit 18000 ~ 22000 dust silicon nitride over the substrate surface;
18) through hole photoetching, etching: carve the via regions be connected between an aluminium with two aluminium,
19) two sputtered aluminums: sputter 2.0 ~ 3.5 microns of aluminium copper silicon, adopt thick aluminium;
20) pressure point photoetching, etching: carve chip pressure point region.
Beneficial effect of the present invention: by comparing (Fig. 4) and (Fig. 5), we can find: (one) adopts antimony to bury in the bipolar process of technology in routine, because antimony diffusion coefficient is less, cause antimony buried regions own vol less, the parasitic PNP base width that Semi-active suspension and substrate are formed is narrower, base can be crossed in more hole, is collected by substrate, thus makes parasitic PNP β larger.And after adopting phosphorus buried regions technology, because P diffusion coefficient is comparatively large, therefore phosphorus buried regions volume is comparatively large, thus parasitic PNP base is wider, compound can more get over hole, makes the hole going to substrate less, and then makes parasitic PNP β less.(2) in conventional bipolar technique, due to dark phosphorus diffuse to darker time, its volume and concentration are all less, therefore lighter with buried regions contact position concentration, and contact position area is very little, so just have more hole and cross dark phosphorus and buried regions junction, be isolated groove and collect, the parasitic PNP β thus making Semi-active suspension and isolation channel be formed is larger.And after adopting dense phosphorus buried regions technology, upwards effect is turned over due to dense phosphorus buried regions, concentration when dark phosphorus spreads darker and volume can well be compensated, make the concentration of the upper and lower joint of dark phosphorus and area all enough large, thus comparatively multi-hole can be stoped to penetrate dark phosphorus arrival isolation channel, thus reduce parasitic PNP β.
By we may safely draw the conclusion above, after adopting phosphorus buried regions and dense phosphorus buried regions technology, p type island region and substrate in common process can well be reduced and parasitic PNP β between isolating.
By experiment, the Semi-active suspension adopting phosphorus buried regions and dense phosphorus buried regions technique to make and the conventional antimony of employing is compared
The Semi-active suspension that buried regions technique makes, finds under identical Semi-active suspension area, phosphorus buried regions and the PNP β minimizing about 35% more parasitic than antimony buried regions technique of dense phosphorus buried regions technique.Data are as follows: Semi-active suspension area is 125*187 μm
2, adopt conventional antimony buried regions technique, the parasitic PNP β between at the bottom of dense boron emitter region and isolation liner is 26/Ic=0.25mA; Adopt phosphorus buried regions and dense phosphorus buried regions technique, its parasitic PNP β is 17/Ic=0.25mA.Therefore, under identical parasitic PNP β, adopt the Semi-active suspension that the bipolar process of phosphorus buried regions and dense phosphorus buried regions technology makes, its area comparable employing antimony buried regions technology reduces about 35%.This will reduce microelectronic product design and flow cost greatly, improve the competitiveness of product in market and occupation rate, thus promote international integrated circuit constantly to more high-quality and more low-carbon environment-friendly future development.
Accompanying drawing explanation
Fig. 1 is the bolt lock structure that parasitic PNP and parasitic NPN are formed;
Fig. 2 is conventional antimony buried regions technology bipolar process flow;
Fig. 3 adopts phosphorus buried regions and dense phosphorus buried regions technology bipolar process flow;
Fig. 4 is the Semi-active suspension structure chart that conventional antimony buried regions technology bipolar process makes;
Fig. 5 is the Semi-active suspension structure chart adopting phosphorus buried regions and dense phosphorus buried regions technology bipolar process to make.
Embodiment
From chip area, adopt phosphorus buried regions and dense phosphorus buried regions technology to adopt antimony buried regions technology chip area size identical with routine, do not need additionally to increase chip area, only technical process is different.
I takes charge of the material piece adopting phosphorus buried regions and dense phosphorus buried regions technique to make Semi-active suspension is P type <100> crystal orientation, and resistivity is 15 ~ 25 Ω cm, and as shown in Figure 3, this processing step is as follows in technological process:
1) feed intake: adopt P type substrate, crystal orientation is <100>;
2) be oxidized: in substrate surface oxidation, oxidated layer thickness is 7000 ~ 8000;
3) photoetching of phosphorus buried regions, injection: inject phosphorus at position, Semi-active suspension buried regions district, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 6E14 ~ 8E14 Atoms/cm
2, impurity is phosphorus;
4) phosphorus buried regions annealing: annealing temperature is 1100 DEG C ~ 1200 DEG C, first logical 300 ~ 320 minutes nitrogen, more logical 90 ~ 110 minutes oxygen;
5) photoetching of boron buried regions, injection: inject boron at position, Semi-active suspension boron buried district, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 2E14 ~ 4E14 Atoms/cm
2, impurity is boron;
6) dense phosphorus buried regions photoetching, injection: inject dense phosphorus at position, Semi-active suspension base, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 2E15 ~ 3E15 Atoms/cm
2, impurity is phosphorus;
7) dense phosphorus buried regions annealing: annealing temperature 1100 DEG C ~ 1150 DEG C, passes into 80 ~ 100 minutes nitrogen;
8) N-type extension: in position, Semi-active suspension base extension, thickness 7 ~ 9 microns, resistivity 1 ~ 3 Ω cm;
9) dark phosphorus diffusion: diffusion position is PNP pipe base, dark phosphorus pre-expansion 1050 DEG C ~ 1080 DEG C, first logical 3 ~ 5 minutes nitrogen and oxygen, then logical 15 ~ 25 minutes phosphorus sources, finally logical 46 minutes nitrogen and oxygen; It is 1100 DEG C ~ 1150 DEG C that dark phosphorus expands again, first logical 3 ~ 5 minutes oxygen, then logical 70 ~ 80 minutes hydrogen and oxygen, finally logical 4 ~ 6 minutes oxygen;
10) isolation diffusion: diffusion position is isolation channel, object is to logical with boron buried regions, isolation pre-expansion is 800 DEG C ~ 950 DEG C, first logical 5 ~ 8 minutes nitrogen and oxygen, then logical 15 ~ 20 minutes boron sources, finally logical 8 ~ 12 minutes nitrogen and oxygen, it is 1150 DEG C ~ 1200 DEG C that isolation is expanded again, passes into 10 ~ 12 minutes nitrogen and oxygen;
11) base injects: injection position is base, resistance area, and base Implantation Energy is 50KeV ~ 80 KeV, and dosage is 5E14 ~ 8E14 Atoms/cm
2, impurity is boron;
12) dense boron injects: injection zone is Semi-active suspension emitter region, collector region, and Implantation Energy is 60KeV, and dosage is 8.0E14 Atoms/cm
2, impurity is boron;
13) base annealing: annealing temperature 1050 DEG C ~ 1100 DEG C, passes into 40 ~ 60 minutes nitrogen,
14) N+ diffusion: diffusion position is Semi-active suspension base ohmic contact district, and it is 850 DEG C ~ 950 DEG C that N+ gives expansion, first logical 3 ~ 5 minutes nitrogen and oxygen, then logical 9 ~ 15 minutes phosphorus sources, finally logical 4 ~ 6 minutes nitrogen and oxygen; It is 1000 DEG C ~ 1150 DEG C that N+ expands again, first logical 3 ~ 5 minutes oxygen, then logical 30 ~ 50 minutes hydrogen and oxygen, finally logical 4 ~ 6 minutes oxygen;
15) contact hole photoetching, corrosion: the method etching adopting wet method, to form good surface state;
16) sputtered aluminum: sputter 1.5 ~ 2.5 microns of aluminium copper silicon over the substrate surface;
17) dielectric deposition: deposit 18000 ~ 22000 dust silicon nitride over the substrate surface;
18) through hole photoetching, etching: carve the via regions be connected between an aluminium with two aluminium,
19) two sputtered aluminums: sputter 2.0 ~ 3.5 microns of aluminium copper silicon, adopt thick aluminium, for improving circuit capacity;
20) pressure point photoetching, etching: carve chip pressure point region.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. adopt a bipolar lateral PNP pipe manufacture craft for phosphorus buried regions and dense phosphorus buried regions technology, it is characterized in that, this technique comprises the steps:
1) feed intake: adopt P type substrate, crystal orientation is <100>;
2) be oxidized: in substrate surface oxidation, oxidated layer thickness is 7000 ~ 8000;
3) photoetching of phosphorus buried regions, injection: inject phosphorus at position, lateral PNP pipe buried regions district, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 6E14 ~ 8E14 Atoms/cm
2, impurity is phosphorus;
4) phosphorus buried regions annealing: annealing temperature is 1100 DEG C ~ 1200 DEG C, first logical 300 ~ 320 minutes nitrogen, more logical 90 ~ 110 minutes oxygen;
5) photoetching of boron buried regions, injection: inject boron at position, Semi-active suspension boron buried district, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 2E14 ~ 4E14 Atoms/cm
2, impurity is boron;
6) dense phosphorus buried regions photoetching, injection: inject dense phosphorus at position, lateral PNP pipe base, Implantation Energy 80 KeV ~ 100KeV, implantation dosage 2E15 ~ 3E15 Atoms/cm
2, impurity is phosphorus;
7) dense phosphorus buried regions annealing: annealing temperature 1100 DEG C ~ 1150 DEG C, passes into 80 ~ 100 minutes nitrogen;
8) N-type extension: in position, Semi-active suspension base extension, thickness 7 ~ 9 microns, resistivity 1 ~ 3 Ω cm;
9) dark phosphorus diffusion: diffusion position is PNP pipe base, and temperature during dark phosphorus pre-expansion is 1050 DEG C ~ 1080 DEG C, first logical 3 ~ 5 minutes nitrogen and oxygen, then logical 15 ~ 25 minutes phosphorus sources, finally logical 46 minutes nitrogen and oxygen; Temperature when dark phosphorus expands again is 1100 DEG C ~ 1150 DEG C, first logical 3 ~ 5 minutes oxygen, then logical 70 ~ 80 minutes hydrogen and oxygen, finally logical 4 ~ 6 minutes oxygen;
10) isolation diffusion: diffusion position is isolation channel, object is to logical with boron buried regions, temperature during isolation pre-expansion is 800 DEG C ~ 950 DEG C, first logical 5 ~ 8 minutes nitrogen and oxygen, then logical 15 ~ 20 minutes boron sources, finally logical 8 ~ 12 minutes nitrogen and oxygen, temperature when isolation is expanded again is 1150 DEG C ~ 1200 DEG C, passes into 10 ~ 12 minutes nitrogen and oxygen;
11) base injects: injection position is base, resistance area, and base Implantation Energy is 50KeV ~ 80 KeV, and dosage is 5E14 ~ 8E14 Atoms/cm
2, impurity is boron;
12) dense boron injects: injection zone is Semi-active suspension emitter region, collector region, and Implantation Energy is 60KeV, and dosage is 8.0E14 Atoms/cm
2, impurity is boron;
13) base annealing: annealing temperature 1050 DEG C ~ 1100 DEG C, passes into 40 ~ 60 minutes nitrogen,
14) N+ diffusion: diffusion position is Semi-active suspension base ohmic contact district, and temperature during N+ pre-expansion is 850 DEG C ~ 950 DEG C, first logical 3 ~ 5 minutes nitrogen and oxygen, then logical 9 ~ 15 minutes phosphorus sources, finally logical 4 ~ 6 minutes nitrogen and oxygen; Temperature when N+ expands again is 1000 DEG C ~ 1150 DEG C, first logical 3 ~ 5 minutes oxygen, then logical 30 ~ 50 minutes hydrogen and oxygen, finally logical 4 ~ 6 minutes oxygen;
15) contact hole photoetching, corrosion: the method etching adopting wet method, to form good surface state;
16) sputtered aluminum: sputter 1.5 ~ 2.5 microns of aluminium copper silicon over the substrate surface;
17) dielectric deposition: deposit 18000 ~ 22000 dust silicon nitride over the substrate surface;
18) through hole photoetching, etching: carve the via regions be connected between an aluminium with two aluminium,
19) two sputtered aluminums: sputter 2.0 ~ 3.5 microns of aluminium copper silicon, adopt thick aluminium;
20) pressure point photoetching, etching: carve chip pressure point region.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121102A (en) * | 1997-03-18 | 2000-09-19 | Telfonaktiebolaget Lm Ericsson | Method of electrical connection through an isolation trench to form trench-isolated bipolar devices |
| CN2870170Y (en) * | 2005-07-19 | 2007-02-14 | Bcd半导体制造有限公司 | Transverse PNP transistor and motor stabilizing circuit adopting same |
| CN101154591A (en) * | 2006-09-29 | 2008-04-02 | 上海华虹Nec电子有限公司 | Manufacturing method for transverse PNP transistor |
| CN101276784A (en) * | 2008-04-29 | 2008-10-01 | 无锡友达电子有限公司 | Technique for preparing bipolar type long-direction NPN tube using phosphorus-buried and deep phosphorus-buried technique |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7859082B2 (en) * | 2007-05-23 | 2010-12-28 | Infineon Technologies Ag | Lateral bipolar transistor and method of production |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121102A (en) * | 1997-03-18 | 2000-09-19 | Telfonaktiebolaget Lm Ericsson | Method of electrical connection through an isolation trench to form trench-isolated bipolar devices |
| CN2870170Y (en) * | 2005-07-19 | 2007-02-14 | Bcd半导体制造有限公司 | Transverse PNP transistor and motor stabilizing circuit adopting same |
| CN101154591A (en) * | 2006-09-29 | 2008-04-02 | 上海华虹Nec电子有限公司 | Manufacturing method for transverse PNP transistor |
| CN101276784A (en) * | 2008-04-29 | 2008-10-01 | 无锡友达电子有限公司 | Technique for preparing bipolar type long-direction NPN tube using phosphorus-buried and deep phosphorus-buried technique |
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