CN103088315A - Chemical vapor deposition device - Google Patents
Chemical vapor deposition device Download PDFInfo
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- CN103088315A CN103088315A CN2011103435815A CN201110343581A CN103088315A CN 103088315 A CN103088315 A CN 103088315A CN 2011103435815 A CN2011103435815 A CN 2011103435815A CN 201110343581 A CN201110343581 A CN 201110343581A CN 103088315 A CN103088315 A CN 103088315A
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- reaction chamber
- vapor deposition
- plasma generation
- chemical vapor
- deposition device
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Abstract
The invention discloses a chemical vapor deposition device. The chemical vapor deposition device comprises a reaction chamber, a plasma generation chamber which is arranged outside the reaction chamber and is connected to the reaction chamber, and a radio frequency generator which is connected to the plasma generation chamber. In work, rays transmitted by the radio frequency generator contact and react with reaction gas in the plasma generation chamber so that plasma for follow-up production is dissociated outside the main body of the reaction chamber and thus the damage produced by radio frequency and dissociation processes in plasma generation on the main boy of the reaction chamber is reduced effectively; service lives of parts related to the main body of the reaction chamber are prolonged; particle contamination of a solid film on the silicon wafer surface is avoided; and a product yield and a product qualified rate are improved.
Description
Technical field
The present invention relates to the semiconductor processing equipment technical field, relate in particular to a kind of chemical vapor deposition device.
Background technology
CVD, i.e. chemical vapor deposition method is that the chemical reaction that mixes by gas is in the technique of silicon chip surface deposit one deck solid film.In CVD technique, need the particle contaminant of the by product in chemical reaction process and silicon chip surface etc. is excluded reaction chamber, for SiO
2Deng particle contaminant, general using plasma (being generally fluorion) is removed.
The process of removing particle contaminant in prior art is to input reactant gases and (be generally CF in reaction chamber
4), adopt afterwards the radio frequency generator in reaction chamber that reactant gases is dissociated, produce plasma body (fluorion), carry out chemical reaction by plasma body and the particle that forms contamination, obtain the resultant of reaction (SiF of gaseous state
4), by the outlet of reaction chamber, resultant of reaction and the by product of gaseous state are discharged in the lump at last.
But, to find in actual production process, the silicon chip surface that takes out from CVD equipment still has a large amount of particle contaminants not remove, thereby affects the final processing effect of device and quality product.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of chemical vapor deposition device, this equipment can be completed the preparation of plasma body in the outside of reaction chamber body, effectively reduced the damage of reaction chamber body, has effectively extended the work-ing life of each associated components of reaction chamber body.
For addressing the above problem, the embodiment of the present invention provides following technical scheme:
A kind of chemical vapor deposition device comprises:
Reaction chamber;
Be positioned at the plasma generation chamber that described reaction chamber is outside and be connected with described reaction chamber;
The radio frequency generator that is connected with described plasma generation chamber.
Preferably, the reactant gases in described plasma generation chamber is NF
3
Preferably, enter in the gas of described reaction chamber through described plasma generation chamber, the concentration of fluorion is greater than 95%.
Preferably, enter in the gas of described reaction chamber through described plasma generation chamber, the concentration of fluorion is greater than 99%.
Preferably, has the first through hole that matches with described reaction chamber on described plasma generation chamber, have the second through hole that matches with described plasma generation chamber on described reaction chamber body, and be connected by conduit between described the first through hole and described the second through hole.
Preferably, described reaction chamber be externally connected to air pump, have the third through-hole that matches with described air pump on described reaction chamber body, be connected by conduit between described third through-hole and described air pump.
Preferably, be provided with detector between described reaction chamber body and described air pump.
Preferably, described plasma generation chamber is externally connected to the reactant gases transfer line, and described plasma generation has the fourth hole that matches with described reactant gases transfer line on the chamber.
Preferably, described radio frequency generator is specially the high-frequency electromagnetic wave producer.
Preferably, described chemical vapor deposition device is that model is the chemical vapor deposition device of P5000.
Compared with prior art, technique scheme has the following advantages:
the chemical vapor deposition device that the embodiment of the present invention provides, the plasma generation chamber with radio frequency generator that cooperatively interacts by the outer setting at described reaction chamber body, the ray that described radio frequency generator is launched contacts with reactant gases and produces reaction in described plasma generation chamber, and then dissociate the required plasma body of subsequent production, thereby make the preparation work of plasma body to complete in the outside of described reaction chamber body, effectively reduced in the dissociation process of the plasma body in the plasma body preparation process damage to reaction chamber inside, extended the work-ing life of described each associated components of reaction chamber, avoided simultaneously the particle contaminant phenomenon on the silicon chip surface solid film, improved product electrically and yield.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The one-piece construction schematic diagram of the chemical vapor deposition device that Fig. 1 provides for a kind of embodiment of the present invention.
Embodiment
Just as described in the background section, the silicon chip surface after CVD technique of the prior art is completed still has a large amount of particle contaminants, thereby affects the electrical and yield of device.the contriver studies discovery, the one of the main reasons that the problems referred to above occur is, pass through radio frequency dissociation reaction gas in prior art, isoionic process and CVD deposition process that generation removing contamination particle is used all carry out in same reaction chamber, causing can be to the inwall injury of reaction chamber in dissociation process, thereby produce a large amount of particles, and eliminating particle stains plasma species used, concentration and amount are limited, and the particle that can not be eliminated in this process can be attached on the surface of silicon chip solid film, cause serious particle contaminant phenomenon, thereby affect the electrical and yield of device.In addition, because the forming process of plasma body is carried out, understand the inwall injury to reaction chamber in this process in reaction chamber, thereby affect the work-ing life of reaction chamber.
Therefore, the contriver considers, if the preparation work of plasma body is completed in the outside of described reaction chamber body, with the damage of the operation such as reduce the radio frequency in the plasma body preparation process and dissociate to the reaction chamber body, extend the work-ing life of described each associated components of reaction chamber body, avoid simultaneously the particle contaminant phenomenon on the silicon chip surface solid film, improve product production and qualification rate.
On basis based on above-mentioned research, the embodiment of the present invention provides a kind of chemical vapor deposition device, comprise reaction chamber and be positioned at the plasma generation chamber that described reaction chamber is outside and be connected with described reaction chamber, described plasma generation has radio frequency generator in the chamber.
the technical scheme that the embodiment of the present invention provides, outer setting at described reaction chamber has the plasma generation chamber that is connected with this reaction chamber, and the radio frequency generator that is connected with the plasma generation chamber, the ray that described radio frequency generator is launched contacts with reactant gases and produces reaction in described plasma generation chamber, and then dissociate the required plasma body of subsequent production, thereby make the preparation work of plasma body to complete in the outside of described reaction chamber, the damage of the operation such as effectively reduced the radio frequency in the plasma body preparation process and dissociate to reaction chamber, extended the work-ing life of described each associated components of reaction chamber, avoided simultaneously the particle contaminant phenomenon on the silicon chip surface solid film, product production and qualification rate have been improved.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that should comprise in addition, length, width and the degree of depth in actual fabrication.
Please refer to Fig. 1, the one-piece construction schematic diagram of the chemical vapor deposition device that Fig. 1 provides for a kind of embodiment of the present invention.
The disclosed chemical vapor deposition device of the embodiment of the present invention comprises reaction chamber 11, also comprises being positioned at the plasma generation chamber 13 that reaction chamber 11 is outside and be connected with reaction chamber 11, and plasma generation has radio frequency generator 12 in the chamber.All represent clear for radio frequency generator and plasma are produced the chamber in Fig. 1, and will both separately draw, but this picture mode is not used for limiting the installation site of radio frequency generator, in theory, radio frequency generator 12 is to be positioned at inside, plasma generation chamber, also can be positioned at outside, plasma generation chamber, preferred, the radio frequency generator in the present embodiment is positioned at inside, plasma generation chamber.
in the course of the work, the ray that radio frequency generator 12 is launched contacts with reactant gases and produces reaction in plasma generation chamber 13, and then dissociate the required plasma body of subsequent production, thereby make the preparation work of plasma body to complete in the outside of reaction chamber body 11, the damage of the operation such as effectively reduced the radio frequency in the plasma body preparation process and dissociate to the reaction chamber body, extended the work-ing life of described each associated components of reaction chamber body, avoided simultaneously the particle contaminant phenomenon on the silicon chip surface solid film, product production and qualification rate have been improved.
Further, also has the first through hole 131 that matches with reaction chamber body 11 on plasma generation chamber 13, have the second through hole 111 that matches with plasma generation chamber 13 on reaction chamber body 11, and be connected by conduit between the first through hole 131 and the second through hole 111.In the course of processing, by reactant gases through plasma body that radio frequency processing dissociates in plasma generation chamber 13 by the first through hole 131 outputs, be delivered to reaction chamber body 11 places through conduit, and passed into the inside of reaction chamber body 11 by the second through hole 111, in order to contact and react with reactants such as silicon-dioxide on the silicon chip that is positioned at reaction chamber body 11 or silicon nitrides, thereby realize the purpose of cleaning silicon chip.
More specifically, reaction chamber body 11 be externally connected to air pump 14, have the third through-hole 112 that matches with air pump 14 on reaction chamber body 11, be connected by conduit between third through-hole 112 and air pump 14.。This air pump 14 can provide mobile driving source for each parts of inside of whole described chemical vapor deposition device and the gas in pipeline, drive relevant reactant gases in the internal flow of whole processing units reactive system, and pass through one by one each associated components by operation, thereby the whole teaching and administrative staff's flow process that makes described chemical vapor deposition device convenient and efficient more.The gas of reaction after completing is discharged by third through-hole 112, and is delivered to corresponding subordinate equipment place through conduit under the drive of the air-flow that air pump 14 produces.In actual production, above-mentioned detector 15 is arranged on the pipeline of 14 of third through-hole 112 and air pumps, so that the related data that its test is arrived is more accurate.
On the other hand, be provided with detector 15 between reaction chamber body 11 and air pump 14.This detector 15 can carry out corresponding detection to the gas by the 11 interior outputs of reaction chamber body, with the technical parameter that obtains to be correlated with, so that the staff understands the processing situation of device interior and the process for processing effect of product according to the technical parameter of gained.
In addition, plasma generation chamber 13 be externally connected to reactant gases transfer line (not shown), have the fourth hole 132 that matches with described reactant gases transfer line on plasma generation chamber 13.In working process, the reactant gases in described reactant gases transfer line passes in the plasma generation chamber, to complete follow-up reaction process by this fourth hole 132.
In addition, above-mentioned radio frequency generator 15 is specially the high-frequency electromagnetic wave producer.The frequency electromagnetic waves that this high-frequency electromagnetic wave producer sends helps to make the dissociation reaction of reactant gases more fully thorough, and makes its reaction efficiency be able to corresponding raising.
Need to prove, the generation gas of the fluorion of available technology adopting is CF
4, and in the present embodiment, the reactant gases in described plasma generation chamber is NF
3, to compare, the liberation degree of the plasma body in the present embodiment is higher, and is preferred, enters in the gas of described reaction chamber through described plasma generation chamber, and the concentration of fluorion is greater than 95%, and is preferred, and the concentration of fluorion is greater than 99%.In addition, preferably to adopt model be the chemical vapor deposition device of P5000 to the chemical vapor deposition device in the present embodiment.
In summary, the chemical vapor deposition device that the embodiment of the present invention provides comprises reaction chamber, also comprises being positioned at the plasma generation chamber that described reaction chamber is outside and be connected with described reaction chamber, and described plasma generation has radio frequency generator in the chamber.in the course of the work, the ray that described radio frequency generator is launched contacts with reactant gases and produces reaction in described plasma generation chamber, and then dissociate the required plasma body of subsequent production, thereby make the preparation work of plasma body to complete in the outside of described reaction chamber body, the damage of the operation such as effectively reduced the radio frequency in the plasma body preparation process and dissociate to the reaction chamber body, extended the work-ing life of described each associated components of reaction chamber body, avoided simultaneously the particle contaminant phenomenon on the silicon chip surface solid film, product production and qualification rate have been improved.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a chemical vapor deposition device, is characterized in that, comprising:
Reaction chamber;
Be positioned at the plasma generation chamber that described reaction chamber is outside and be connected with described reaction chamber;
The radio frequency generator that is connected with described plasma generation chamber.
2. chemical vapor deposition device according to claim 1 is characterized in that: the reactant gases in described plasma generation chamber is NF
3
3. chemical vapor deposition device according to claim 2 is characterized in that: enter in the gas of described reaction chamber through described plasma generation chamber, the concentration of fluorion is greater than 95%.
4. chemical vapor deposition device according to claim 4 is characterized in that: enter in the gas of described reaction chamber through described plasma generation chamber, the concentration of fluorion is greater than 99%.
5. chemical vapor deposition device according to claim 1, it is characterized in that: described plasma generation has the first through hole that matches with described reaction chamber on the chamber, have the second through hole that matches with described plasma generation chamber on described reaction chamber body, and be connected by conduit between described the first through hole and described the second through hole.
6. chemical vapor deposition device according to claim 5, it is characterized in that: described reaction chamber be externally connected to air pump, have the third through-hole that matches with described air pump on described reaction chamber body, be connected by conduit between described third through-hole and described air pump.
7. chemical vapor deposition device according to claim 6, is characterized in that: be provided with detector between described reaction chamber body and described air pump.
8. chemical vapor deposition device according to claim 2 is characterized in that: described plasma generation chamber is externally connected to the reactant gases transfer line, and described plasma generation has the fourth hole that matches with described reactant gases transfer line on the chamber.
9. chemical vapor deposition device according to claim 1, it is characterized in that: described radio frequency generator is specially the high-frequency electromagnetic wave producer.
10. according to claim 1-9 described chemical vapor deposition devices of any one, it is characterized in that: described chemical vapor deposition device is that model is the chemical vapor deposition device of P5000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103435815A CN103088315A (en) | 2011-11-03 | 2011-11-03 | Chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103435815A CN103088315A (en) | 2011-11-03 | 2011-11-03 | Chemical vapor deposition device |
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|---|---|
| CN103088315A true CN103088315A (en) | 2013-05-08 |
Family
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| CN2011103435815A Pending CN103088315A (en) | 2011-11-03 | 2011-11-03 | Chemical vapor deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114214607A (en) * | 2021-12-16 | 2022-03-22 | 四川大学 | Gas shunting device and plasma processing equipment with same |
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| US20040084147A1 (en) * | 2002-03-26 | 2004-05-06 | Dando Ross S. | Valve assemblies for use with a reactive precursor in semiconductor processing |
| CN1717791A (en) * | 2002-11-27 | 2006-01-04 | 东京毅力科创株式会社 | Method for cleaning substrate processing chamber |
| WO2008007675A1 (en) * | 2006-07-11 | 2008-01-17 | Tokyo Electron Limited | Film formation method, cleaning method, and film formation device |
| CN101338413A (en) * | 2007-07-06 | 2009-01-07 | 应用材料股份有限公司 | Remote inductively coupled plasma source for cvd chamber cleaning |
| CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
-
2011
- 2011-11-03 CN CN2011103435815A patent/CN103088315A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040084147A1 (en) * | 2002-03-26 | 2004-05-06 | Dando Ross S. | Valve assemblies for use with a reactive precursor in semiconductor processing |
| CN1717791A (en) * | 2002-11-27 | 2006-01-04 | 东京毅力科创株式会社 | Method for cleaning substrate processing chamber |
| WO2008007675A1 (en) * | 2006-07-11 | 2008-01-17 | Tokyo Electron Limited | Film formation method, cleaning method, and film formation device |
| CN101338413A (en) * | 2007-07-06 | 2009-01-07 | 应用材料股份有限公司 | Remote inductively coupled plasma source for cvd chamber cleaning |
| CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114214607A (en) * | 2021-12-16 | 2022-03-22 | 四川大学 | Gas shunting device and plasma processing equipment with same |
| CN114214607B (en) * | 2021-12-16 | 2022-10-18 | 四川大学 | Gas shunting device and plasma processing equipment with same |
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Application publication date: 20130508 |