CN103078062B - Organic electroluminescence device and preparation method thereof - Google Patents

Organic electroluminescence device and preparation method thereof Download PDF

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CN103078062B
CN103078062B CN201110327382.5A CN201110327382A CN103078062B CN 103078062 B CN103078062 B CN 103078062B CN 201110327382 A CN201110327382 A CN 201110327382A CN 103078062 B CN103078062 B CN 103078062B
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organic electroluminescence
electroluminescence device
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glass
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CN201110327382.5A
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CN103078062A (en
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周明杰
王平
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海洋王照明科技股份有限公司
深圳市海洋王照明技术有限公司
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Abstract

The present invention is applicable to technical field of organic electroluminescence, it is provided that a kind of organic electroluminescence device and preparation method thereof. This organic electroluminescence device includes the anode layer, organic function layer, cathode layer and the glass substrate layers that stack gradually, this glass substrate layers spherically shape, and this anode layer, organic function layer, cathode layer and substrate of glass are arranged in order along this sphere radial direction. Organic electroluminescence device of the present invention, by the glass substrate layers of spheric and inversion bottom emitting structure, forms microcavity effect, regulates total internal reflection and the transversal waveguides output of organic electroluminescence device, it is achieved that being obviously improved of device light emitting efficiency; Organic electroluminescence device preparation method of the present invention, with low cost, simple to operate, suitable in industrialized production.

Description

Organic electroluminescence device and preparation method thereof

Technical field

The invention belongs to technical field of organic electroluminescence, particularly relate to a kind of organic electroluminescence device and preparation method thereof.

Background technology

Organic electroluminescence device has important commercial value. Ordinary circumstance, device, under 10V driving voltage, launches green glow, and brightness is up to 1000cd/m2, efficiency reaches 1.5lm/W, and the life-span was more than 1000 hours. But, due to the difference of refractive index inside and outside device, causing the light sent at device inside to only have fraction can arrive extraneous air to be utilized by us, major part light is then closed in device inside, is finally absorbed by inner material through repeatedly reflecting and becomes heat. The light that luminescent layer sends have passed through the process of the optical couplings such as the absorption of each organic layer, ITO and substrate of glass, reflection and refraction. The method improving at present organic electroluminescence device coupling efficiency is a lot, for instance, 1, increase the substrate surface roughness with Air Interface; Etching groove on the glass substrate, these grooves play a part reflective mirror, are again derived by light; 2, use, in glass back, the circle lens that refraction index is close, by changing the size of lens, change critical angle, again by light-output; 3, employing improves scattering at substrate surface periodic arrangement silicon microsphere, by guide-lighting for lateral wave vertical injection; 4, the Bragg reflection face of arranged distribution can also be adopted or between substrate of glass and ITO layer, insert one layer of low-refraction material can also increase the light extraction efficiency etc. of device. But the preparation process that these methods generally all can make device is more loaded down with trivial details, and make emission spectrum generation dependence of angle, the light extraction efficiency of device improves also insufficient, and total reflection and transversal waveguides loss to device can not take into account, and final luminous efficiency is still not high.

Summary of the invention

In view of this, the present invention provides a kind of organic electroluminescence device, solves the technical problem that in prior art, organic electroluminescence device luminous efficiency is not high.

The present invention is achieved in that

A kind of organic electroluminescence device, including the anode layer stacked gradually, organic function layer, cathode layer and glass substrate layers, this glass substrate layers spherically shape, this anode layer, organic function layer, cathode layer and substrate of glass are arranged in order along this sphere radial direction, also including antireflection layer, this antireflection layer is fitted between described cathode layer and glass substrate layers.

And,

Above-mentioned organic electroluminescence device preparation method, comprises the steps:

Take the substrate of glass of a spheric, be cleaned this substrate of glass processing;

Antireflection layer is formed at the inner surface of the substrate of glass of described spheric by vacuum evaporation;

On the inner surface of this antireflection layer, cathode layer is formed by vacuum evaporation;

On the inner surface of this cathode layer, organic function layer is formed by vacuum evaporation;

On the inner surface of this organic function layer, form anode layer by vacuum evaporation, obtain organic electroluminescence device.

Organic electroluminescence device of the present invention, by the glass substrate layers of spherical surface body structure and inversion bottom emitting structure, forms microcavity effect, regulates total internal reflection and the transversal waveguides output of organic electroluminescence device, it is achieved that being obviously improved of device light emitting efficiency; Organic electroluminescence device preparation method of the present invention, with low cost, simple to operate, suitable in industrialized production.

Accompanying drawing explanation

Fig. 1 is embodiment of the present invention organic electroluminescence device longitudinal section;

Fig. 2 is the organic function layer longitudinal section of embodiment of the present invention organic electroluminescence device;

Fig. 3 is the organic electroluminescence device luminance-voltage relation comparison diagram of the embodiment of the present invention one and comparative example.

Detailed description of the invention

In order to make the purpose of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated. Should be appreciated that specific embodiment described herein is only in order to explain the present invention, is not intended to limit the present invention.

Refer to Fig. 1, Fig. 1 shows the longitudinal section of embodiment of the present invention organic electroluminescence device, embodiment of the present invention organic electroluminescence device includes the anode layer 1, organic function layer 2, cathode layer 3 and the glass substrate layers 4 that stack gradually, this glass substrate layers 4 spherically shape, this anode layer 1, organic function layer 2, cathode layer 3 and glass substrate layers 4 are arranged in order along this sphere radial direction, also including antireflection layer 5, described antireflection layer 5 is fitted between described cathode layer 3 and glass substrate layers 4.

Specifically, this glass substrate layers 4 is spheric, and this glass substrate layers 4 internal diameter is 2 millimeters��10 millimeters, it is preferred to 3 millimeters��8 millimeters, for instance, 4 millimeters, 5 millimeters, 6 millimeters, 7 millimeters;

Specifically, the stacking of this cathode layer 3 and this glass substrate layers 4, therefore this cathode layer 3 is spheric; The thickness of this cathode layer 3 is 10 nanometers��30 nanometers, it is preferred to 20 nanometers; This cathode layer 3 is positioned at the inner surface of this glass substrate layers 4 and this glass substrate layers 4 phase stacking, and this glass substrate layers 4 and this cathode layer 3 are arranged in order along the radial direction of this glass substrate layers 4 sphere, namely this negative electrode 3 is near the centre of sphere of this substrate of glass 4 or center.

Embodiment of the present invention organic electroluminescence device also includes antireflection layer 5, and this antireflection layer 5 is spheric, and this antireflection layer 5 is fitted between this glass substrate layers 4 and this cathode layer 3, it is achieved this antireflection layer 5 and this this glass substrate layers 4 and the mutual stacking of this cathode layer 3. The thickness of this antireflection layer 5 is 20 nanometers��30 nanometers; By adding one layer of antireflection layer between cathode layer and glass substrate layers, utilizing the principle of interference of thin film, making the reflection light by antireflective coating interface cancel out each other the purpose reaching to reduce reflection, thus improving the transmitance of semitransparent cathode metal;

Specifically, this organic function layer 2 is stratiform, this organic function layer 2 and this cathode layer 3 stacking, this organic function layer is also spheric, this organic function layer 2 is positioned at the inner surface of this cathode layer 3, it is arranged in order along the radial direction of this glass substrate layers 4 sphere with this cathode layer 3 phase stacking, this cathode layer 3 and organic function layer 2, namely this organic function layer 3 is near the centre of sphere of this glass substrate layers 4 or center.

Further, refer to Fig. 2, Fig. 2 shows the longitudinal section of this organic function layer, and this organic function layer 2 includes hole transmission layer 21, luminescent layer 22, hole blocking layer 23 and electron transfer layer 24, and this hole transmission layer 21, luminescent layer 22, hole blocking layer 23 and electron transfer layer 24 are layer structure; This electron transfer layer 24, hole blocking layer 23, luminescent layer 22 and hole transmission layer 21 are arranged in order along this glass substrate layers 4 sphere radial direction, that is, this hole transmission layer 21 is near the centre of sphere of this substrate of glass 4 or center.

Specifically, the thickness of this hole transmission layer 21 is 20 nanometers��80 nanometers, it is preferred to 40 nanometers; The thickness of this luminescent layer 22 is 30 nanometers��60 nanometers, it is preferred to 40 nanometers; The thickness of this hole blocking layer 23 is 2 nanometers��20 nanometers, it is preferred to 10 nanometers; The thickness of this electron transfer layer 24 is 30 nanometers��60 nanometers, it is preferred to 40 nanometers;

Specifically, this anode layer 1 and this organic function layer 2 stacking, this anode layer 1 is also spheric; This anode layer 1 is positioned at the inner surface of this organic function layer 2, and this organic function layer 2 phase stacking, this organic function layer 2 and anode layer 1 are arranged in order along the radial direction of this glass substrate layers 4 sphere, namely this anode layer 1 is near the centre of sphere of this glass substrate layers 4 or center. The thickness of this anode 1 is 100 nanometers��200 nanometers, it is preferred to 150 nanometers.

Specifically, owing to anode layer 1, organic function layer 2, cathode layer 3 and glass substrate layers 4 are spheric, and stack gradually, therefore, embodiment of the present invention organic electroluminescence device is also spheric, and this anode 1, organic function layer 2, negative electrode 3 and substrate of glass are arranged in order along described sphere radial direction.

Embodiment of the present invention organic electroluminescence device, by its spheric structure, the total internal reflection loss caused by the difference of luminescent layer Yu air refraction is penetrated by curved refractive, simultaneously, the transversal waveguides of organic layer is lost and catches, the light extraction efficiency making device is greatly increased, it is achieved that being obviously improved of device light emitting efficiency; Being inverted device architecture by adopting, anode and negative electrode are metal, and the translucent positive pole of bottom and the mirror surface of top substrate of glass form microcavity effect, by interference of light effect, narrowed emission spectrum, enhances radioluminescence, it is achieved that being greatly promoted of device light emitting efficiency;

The preparation method that the embodiment of the present invention further provides for above-mentioned organic electroluminescence device, comprises the steps:

Step S01, it is provided that a spheric substrate of glass:

Take the substrate of glass of a spheric, be cleaned this substrate of glass processing;

Step S02, prepares antireflection layer:

On the inner surface of this spheric substrate of glass, antireflection layer is formed by vacuum evaporation;

Step S03, prepares cathode layer:

On the inner surface of described antireflection layer, cathode layer is formed by vacuum evaporation;

Step S04, prepares organic function layer:

On the inner surface of this cathode layer, organic function layer is formed by vacuum evaporation;

Step S05, prepares anode:

On the inner surface of this organic function layer, form anode by vacuum evaporation, obtain organic electroluminescence device.

Specifically, in step S01, taking a spheric substrate of glass, the internal diameter of this spheric substrate of glass is 2 millimeters��10 millimeters, it is preferred to 3 millimeters��8 millimeters, for instance, 4 millimeters, 5 millimeters; This substrate of glass is carried out following cleaning treatment:

By hemispherical substrate of glass successively with each ultrasonic cleaning 10��15min such as pure water, acetone, ethanol.

Specifically, in step S02, the substrate of glass after cleaning is put in the cavity of vacuum coating equipment and carry out vacuum evaporation, the inner surface of this substrate of glass is formed antireflection layer. The antireflection layer formed on this substrate of glass inner surface by vacuum coating is layer structure, and specifically, this antireflection layer is identical with the shape of this substrate of glass, is spheric; The thickness of this antireflection layer is 20 nanometers��80 nanometers;

The material of this antireflection layer is selected from tellurium dioxide (TeO2), zinc selenide (ZnSe), zinc sulfide (ZnS), molybdenum trioxide (MoO3), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), oxine aluminum (Alq3) or 4,4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamines (m-MTDATA).

Specifically, in step S03, this substrate of glass containing antireflection layer is put in the cavity of vacuum coating equipment and carry out vacuum evaporation, the inner surface of this antireflection layer is formed negative electrode, the negative electrode formed on the inner surface of this antireflection layer by vacuum coating is layer structure, specifically, this negative electrode is identical with the shape of this substrate of glass, is spheric; The thickness of this negative electrode is 10 nanometers��30 nanometers, it is preferred to 20 nanometers;

The negative electrode that the material of this negative electrode is described is silver (Ag), aluminum (Al), calcium/silver alloy (Ca/Ag), aluminum/silver alloy (Al/Ag) or silver/aluminum/lithium fluoride alloy (Ag/Al/LiF), it is preferred to Ag.

Specifically, in step S04, there is the substrate of glass of negative electrode to put into evaporation and vacuum coating equipment carries out vacuum evaporation, the inner surface of this negative electrode is formed electron transfer layer. The electron transfer layer formed in this cathode inner surface by vacuum coating is layer structure, and specifically, this electron transfer layer is identical with the shape of this negative electrode, identical, is spheric; The thickness of this electron transfer layer is 30 nanometers��60 nanometers, it is preferred to 40 nanometers;

The substrate of glass that this evaporation has electron transfer layer is proceeded vacuum evaporation after forming electron transfer layer by evaporation, forms hole blocking layer on the inner surface of this electron transfer layer. The hole blocking layer formed on this electron transfer layer inner surface by vacuum coating is layer structure, and specifically, this hole blocking layer is identical with the shape of this electron transfer layer, is spheric; The thickness of this hole blocking layer is 2 nanometers��20 nanometers, it is preferred to 10 nanometers;

The substrate of glass that this evaporation has hole blocking layer is proceeded vacuum evaporation after forming hole blocking layer by evaporation, forms luminescent layer on the inner surface of this hole blocking layer. The luminescent layer formed on this hole blocking layer inner surface by vacuum coating is layer structure, and specifically, this luminescent layer is identical with the shape of this hole blocking layer, is spheric; The thickness of this luminescent layer is 30 nanometers��60 nanometers, it is preferred to 40 nanometers;

After evaporation forms luminescent layer, there is the substrate of glass of luminescent layer to proceed vacuum evaporation evaporation, this luminescent layer inner surface is formed hole transmission layer; The hole transmission layer formed on this luminescent layer inner surface by vacuum coating is layer structure, and specifically, this hole transmission layer is identical with the shape of this luminescent layer, is spheric; The thickness of this hole transmission layer is 20 nanometers��80 nanometers, it is preferred to 40 nanometers;

The material of electron transfer layer is cesium carbonate (Cs2CO3), cesium azide (CsN3), cesium fluoride (CsF), lithium fluoride (LiF), lithium oxide (Li2Or lithium carbonate (Li O)2CO3) and 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-diazole (PBD), oxine aluminum (Alq3), 2,5-bis-(1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1, the mixture that 10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ) form;

The material of hole blocking layer is selected from 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-diazole (PBD), oxine aluminum (Alq3), 2,5-bis-(1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ);

The material of luminescent layer is made up of luminescent material and material of main part, luminescent material: 4,4 '-two (9-ethyl-3-carbazole vinyl)-1,10-diphenyl (BCzVBi), three (2-phenylpyridines) close iridium (Ir (ppy)3), two (2-methyl-diphenylquinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ)2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq)3) and material of main part: 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI);

The material of hole transmission layer is tetrafluoro 1,4-benzoquinone bismethane (F4-TCNQ), four cyano 1,4-benzoquinone bismethane (TCNQ) or molybdenum trioxide (MoO3), Tungstic anhydride. (WO3), vanadic anhydride (V2O5) it is doped to hole mobile material 4,4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine (m-MTDATA), N; N '-two (3-aminomethyl phenyl)-N; N '-diphenyl-4; 4 '-benzidine (TPD), 4; 4 '; 4 "-three (carbazole-9-base) triphenylamine (TCTA), N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB) or 1,3,5-triphenylbenzenes (TDAPB).

Specifically, in step S05, there is the substrate of glass of organic function layer to put in the wire chamber of vacuum coating equipment evaporation and proceed vacuum evaporation, this hole transmission layer inner surface is formed anode, the anode formed on this hole transmission layer inner surface by vacuum coating is layer structure, specifically, this anode is identical with the shape of this hole transmission layer, is spheric; The thickness of this anode is 100 nanometers��200 nanometers, it is preferred to 150 nanometers; The material of this anode is selected from silver (Ag), aluminum (Al), platinum (Pt), gold (Au), silver oxide/silver (Ag2Or molybdenum trioxide/silver (MoO O/Ag)3/ Ag), it is preferred to Al.

Embodiment of the present invention organic electroluminescence device, by selecting the substrate of glass of spheric, the inner surface of this spheric substrate of glass forms each functional layer by vacuum evaporation, make this glass substrate layers spherically shape, and for being inverted bottom emitting structure, further by preparing antireflection layer, substantially increase the luminous efficiency of device; Embodiment of the present invention organic electroluminescence device preparation method, simple to operate, with low cost, it is extremely suitable for industrial production.

Below in conjunction with specific embodiment, above-mentioned organic electroluminescence device preparation method is described in detail.

Embodiment one

The embodiment of the present invention one organic electroluminescence device preparation method, comprises the steps:

By internal diameter be 5 millimeters, thickness be the hemispherical substrate of glass of 4 millimeters, successively with each ultrasonic cleaning 10min such as pure water, acetone, ethanol;

Cleaned substrate of glass being put in the metallic cavity of vacuum coating equipment, evaporation thickness is 30nm successively, and material is the antireflection layer of ZnS, thickness is 20nm, and material is the negative electrode of Ag;

Then the hemisphere substrate of glass of negative electrode there is is to put in organic vacuum cavity evaporation, evaporation thickness is 40nm successively, material is the electron transfer layer of (Bphen:Cs) mixture, thickness is 10nm, material is the hole blocking layer of Bphen, thickness is 40nm, and material is TCTA:Ir (ppy)3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;

Then evaporation has the substrate of glass of hole transmission layer move into metallic cavity, and continuation evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.

Embodiment two

The embodiment of the present invention two organic electroluminescence device preparation method, comprises the steps:

By internal diameter be 5 millimeters, thickness be the hemispherical substrate of glass of 4 millimeters, successively with each ultrasonic cleaning 13min such as pure water, acetone, ethanol;

Cleaned substrate of glass being put in the metallic cavity of vacuum coating equipment, evaporation thickness is 20nm successively, and material is MoO3Antireflection layer, thickness be 20nm, material is the negative electrode of Ag;

Then the hemisphere substrate of glass of negative electrode there is is to put in organic vacuum cavity evaporation, evaporation thickness is 40nm successively, material is the electron transfer layer of (Bphen:Cs) mixture, thickness is 10nm, material is the hole blocking layer of Bphen, thickness is 40nm, and material is TCTA:Ir (ppy)3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;

Then evaporation has the substrate of glass of hole transmission layer move into metallic cavity, and continuation evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.

Embodiment three

The embodiment of the present invention three organic electroluminescence device preparation method, comprises the steps:

By internal diameter be 3 millimeters, thickness be the hemispherical substrate of glass of 3 millimeters, successively with each ultrasonic cleaning 15min such as pure water, acetone, ethanol;

Cleaned substrate of glass being put in the metallic cavity of vacuum coating equipment, evaporation thickness is 40nm successively, and material is the antireflection layer of BCP, thickness is 30nm, and material is the negative electrode of Ag;

Then the hemisphere substrate of glass of negative electrode there is is to put in organic vacuum cavity evaporation, evaporation thickness is 40nm successively, material is the electron transfer layer of (Bphen:Cs) mixture, thickness is 10nm, material is the hole blocking layer of Bphen, thickness is 40nm, and material is TCTA:Ir (ppy)3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;

Then evaporation has the substrate of glass of hole transmission layer move into metallic cavity, and continuation evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.

Embodiment four

The embodiment of the present invention four organic electroluminescence device preparation method, comprises the steps:

By internal diameter be 10 millimeters, thickness be the hemispherical substrate of glass of 8 millimeters, successively with each ultrasonic cleaning 15min such as pure water, acetone, ethanol;

Cleaned substrate of glass being put in the metallic cavity of vacuum coating equipment, evaporation thickness is 60nm successively, and material is the antireflection layer of m-MTDATA, thickness is 10nm, and material is the negative electrode of Ag;

Then the hemisphere substrate of glass of negative electrode there is is to put in organic vacuum cavity evaporation, evaporation thickness is 40nm successively, material is the electron transfer layer of (Bphen:Cs) mixture, thickness is 10nm, material is the hole blocking layer of Bphen, thickness is 40nm, and material is TCTA:Ir (ppy)3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;

Then evaporation has the substrate of glass of hole transmission layer move into metallic cavity, and continuation evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.

Embodiment five

The embodiment of the present invention five organic electroluminescence device preparation method, comprises the steps:

By internal diameter be 5 millimeters, thickness be the hemispherical substrate of glass of 4 millimeters, successively with each ultrasonic cleaning 15min such as pure water, acetone, ethanol;

Cleaned substrate of glass being put in the metallic cavity of vacuum coating equipment, evaporation thickness is 80nm successively, and material is Alq3Antireflection layer, thickness be 10nm, material is the negative electrode of Ag;

Then the hemisphere substrate of glass of negative electrode there is is to put in organic vacuum cavity evaporation, evaporation thickness is 40nm successively, material is the electron transfer layer of (Bphen:Cs) mixture, thickness is 10nm, material is the hole blocking layer of Bphen, thickness is 40nm, and material is TCTA:Ir (ppy)3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;

Then evaporation has the substrate of glass of hole transmission layer move into metallic cavity, and continuation evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.

Embodiment six

The embodiment of the present invention six organic electroluminescence device preparation method, comprises the steps:

By internal diameter be 5 millimeters, thickness be the hemispherical substrate of glass of 4 millimeters, successively with each ultrasonic cleaning 12min such as pure water, acetone, ethanol;

Cleaned substrate of glass being put in the metallic cavity of vacuum coating equipment, evaporation thickness is 50nm successively, and material is TeO2Antireflection layer, thickness be 20nm, material is the negative electrode of Ag;

Then the hemisphere substrate of glass of negative electrode there is is to put in organic vacuum cavity evaporation, evaporation thickness is 40nm successively, material is the electron transfer layer of (Bphen:Cs) mixture, thickness is 10nm, material is the hole blocking layer of Bphen, thickness is 40nm, and material is TCTA:Ir (ppy)3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;

Then evaporation has the substrate of glass of hole transmission layer move into metallic cavity, and continuation evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.

Comparative example

By the planar shaped substrate of glass that thickness is 4 millimeters, successively with each ultrasonic cleaning 12min such as pure water, acetone, ethanol;

Cleaned substrate of glass being put in the metallic cavity of vacuum coating equipment, evaporation thickness is 20nm, and material is the negative electrode of Ag;

Then the hemisphere substrate of glass of negative electrode there is is to put in organic vacuum cavity evaporation, evaporation thickness is 40nm successively, material is the electron transfer layer of (Bphen:Cs) mixture, thickness is 10nm, material is the hole blocking layer of Bphen, thickness is 40nm, and material is TCTA:Ir (ppy)3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;

Then evaporation has the substrate of glass of hole transmission layer move into metallic cavity, and continuation evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.

Refer to Fig. 3, Fig. 3 shows the organic electroluminescence device brightness-voltage curve comparison diagram of the embodiment of the present invention one and comparative example, as can be drawn from Figure 3, the organic electroluminescence device of embodiment one is more much higher than the luminous efficiency of the organic electroluminescence device of comparative example.

The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. made within the spirit and principles in the present invention, should be included within protection scope of the present invention.

Claims (8)

1. an organic electroluminescence device, it is characterized in that, including the anode layer stacked gradually, organic function layer, cathode layer and glass substrate layers, described glass substrate layers spherically shape, described anode layer, organic function layer, cathode layer and substrate of glass are arranged in order along described sphere radial direction, also include antireflection layer, described antireflection layer is fitted between described cathode layer and glass substrate layers, the material of described antireflection layer is tellurium dioxide, molybdenum trioxide, 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline, oxine aluminum or 4, 4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine.
2. organic electroluminescence device as claimed in claim 1, it is characterized in that, described organic function layer includes hole transmission layer, luminescent layer, hole blocking layer and electron transfer layer, and described hole transmission layer, luminescent layer, hole blocking layer and electron transfer layer are arranged in order along described glass substrate layers sphere radial direction.
3. organic electroluminescence device as claimed in claim 1, it is characterised in that the internal diameter of described glass substrate layers is 2 millimeters��10 millimeters.
4. organic electroluminescence device as claimed in claim 1, it is characterised in that the thickness of described glass substrate layers is 3 millimeters��8 millimeters.
5. organic electroluminescence device as claimed in claim 1, it is characterised in that the thickness of described antireflection layer is 20 nanometers��80 nanometers.
6. organic electroluminescence device as claimed in claim 1, it is characterised in that the thickness of described cathode layer is 10 nanometers��30 nanometers.
7. the preparation method of organic electroluminescence device as claimed in claim 1, comprises the steps:
Take the substrate of glass of a spheric, be cleaned described substrate of glass processing;
Antireflection layer is formed at the substrate of glass inner surface of described spheric by vacuum evaporation;
On the inner surface of described antireflection layer, cathode layer is formed by vacuum evaporation;
On the inner surface of described cathode layer, organic function layer is formed by vacuum evaporation;
On the inner surface of described organic function layer, form anode layer by vacuum evaporation, obtain organic electroluminescence device,
Wherein, the material of described antireflection layer is tellurium dioxide, molybdenum trioxide, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, oxine aluminum or 4,4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamines.
8. organic electroluminescence device preparation method as claimed in claim 7, it is characterised in that the thickness of described antireflection layer is 20 nanometers��80 nanometers.
CN201110327382.5A 2011-10-25 2011-10-25 Organic electroluminescence device and preparation method thereof CN103078062B (en)

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