CN103066908B - Quick response magnet controlled reactor - Google Patents
Quick response magnet controlled reactor Download PDFInfo
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- CN103066908B CN103066908B CN201210528061.6A CN201210528061A CN103066908B CN 103066908 B CN103066908 B CN 103066908B CN 201210528061 A CN201210528061 A CN 201210528061A CN 103066908 B CN103066908 B CN 103066908B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
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Abstract
The present invention relates to one and respond magnet controlled reactor fast, be applicable to wind energy turbine set dynamic reactive compensation device.The present invention improves on the basis of existing common magnetron reactor, and its main improvement is increase by damping resistance R and the IGBT in parallel with damping resistance R.Described damping resistance R is connected between the positive pole of sustained diode 1 and the tail end D11 of the first coil L1; Described insulated gate bipolar transistor IGBT is in parallel with damping resistance R, and its grid G connects the output of IGBT driving chip; The number of turn between described first tap K11 and the second tap K12 is n1, the first tapping ratio δ of described first coil L1 and the second coil L2
1=
=1.5 ~ 3.0%; The number of turn between described 3rd tap K21 and the 4th tap K22 is n2, the second tapping ratio δ of described tertiary coil L3 and the 4th coil L4
2=
=15 ~ 20%.Advantage of the present invention is that realize the fast dynamic response of magnet controlled reactor, simple and practical, reliable height, cost are low owing to adopting damping resistance to realize demagnetization fast.
Description
Technical field
The present invention relates to one and respond magnet controlled reactor fast, be applicable to wind energy turbine set dynamic reactive compensation device.
Background technology
Wind-powered electricity generation is a kind of clean, regenerative resource, and be the new forms of energy that various countries fall over each other to develop, the Dou Shi world was the highest in recent years for the growth rate of the installed capacity of wind-driven power of China.In order to ensure the reliable and stable of electrical network, wind-electricity integration must meet a series of strict condition, not only has capacity requirement to reactive power compensation, also requires enough response speeds fast.National grid adjusts [2011] No. 974 " notices about printing and distributing wind-electricity integration operation anti-accident measures main points " to require: " wind energy turbine set should consider stable state, transient state, dynamic process under various generated output level and the various operating condition of connecting system; configure enough dynamic passive compensation capacity, and the response time of dynamic adjustments is not more than 30ms.The response speed of wind energy turbine set idle dynamic adjustment should match with high-voltage ride through of wind power generating set ability, guarantees the Wind turbines not off-grid because of high voltage in adjustment process." raising of response speed is more and more subject to high attention as the important component part of dynamic reactive compensation device optimization.
There is a large amount of magnetic control (MSVC) passive dynamic passive compensation complete device in current wind energy turbine set, its response speed, all at more than 100ms, adjusts the 30ms of [2011] No. 974 documentation requirements far beyond national grid, anxious to be resolved.
The every of common magnetron reactor (see figure 1) of current employing comprises symmetrically arranged two iron core column, first to fourth coil L1 ~ L4 of the band tap be enclosed within two iron core column, the first to the second controllable silicon K1 ~ K2, sustained diode 1 mutually; The number of turn of described first to fourth coil L1 ~ L4 is N circle; First coil L1 and the second coil L2 is enclosed within an iron core column, tertiary coil L3 and the 4th coil L4 is enclosed within another iron core column, the tail end D11 of the first coil L1 meets the head end D22 of the 4th coil L4, the head end D12 of the second coil L2 meets the tail end D21 of tertiary coil L3, the positive pole streaming diode D1 meets the tail end D11 of the first coil L1, and the negative pole of sustained diode 1 meets the tail end D21 of tertiary coil L3; The tap of first to fourth coil L1 ~ L4 is respectively first to fourth tap K11, K12, K21, K22; The anode of the first controllable silicon K1 meets the first tap K11, and its negative electrode meets the second tap K12; The negative electrode of the second controllable silicon K2 meets the 3rd tap K21, and its anode meets the 4th tap K22; The described head end A1 of the first coil L1 and the head end A2 of tertiary coil L3 all connects the A phase connection terminal of three-phase alternating-current supply; The tail end X1 of the second coil L2 and the tail end X2 of the 4th coil L4 all connects X binding post.
First tapping ratio of above-mentioned common magnetron reactor is δ
1, the second tapping ratio is δ
2, and δ
1=δ
2.
Because the inductance value of first to fourth coil L1 ~ L4 of common magnetron reactor is comparatively large, discharge and recharge time constant (τ=L/R) numerical value is large, and therefore, response speed is slow.
Summary of the invention
Technical problem to be solved by this invention is to provide the magnet controlled reactor of the quick response that a kind of structure is simple, reliability is high and cost is low.
The technical solution adopted for the present invention to solve the technical problems:
The present invention improves on the basis of existing common magnetron reactor, and its main improvement is increase by damping resistance R and the IGBT in parallel with damping resistance R.
Technical scheme of the present invention is as follows:
One responds magnet controlled reactor fast, and described quick response magnet controlled reactor is three-phase or single-phase quick response magnet controlled reactor; The every of described quick response magnet controlled reactor comprises symmetrically arranged two iron core column, first to fourth coil L1 ~ L4 of the band tap be enclosed within two iron core column, the first to the second controllable silicon K1 ~ K2, sustained diode 1 mutually; The number of turn of described first to fourth coil L1 ~ L4 is N circle; First coil L1 and the second coil L2 is enclosed within an iron core column, tertiary coil L3 and the 4th coil L4 is enclosed within another iron core column, the tail end D11 of the first coil L1 meets the head end D22 of the 4th coil L4, the head end D12 of the second coil L2 meets the tail end D21 of tertiary coil L3, the positive pole of sustained diode 1 meets the tail end D11 of the first coil L1, and the negative pole of sustained diode 1 meets the tail end D21 of tertiary coil L3; The tap of first to fourth coil L1 ~ L4 is respectively first to fourth tap K11, K12, K21, K22; The anode of the first controllable silicon K1 meets the first tap K11, and its negative electrode meets the second tap K12; The negative electrode of the second controllable silicon K2 meets the 3rd tap K21, and its anode meets the 4th tap K22; The described head end A1 of the first coil L1 and the head end A2 of tertiary coil L3 all connects the A phase connection terminal of three-phase alternating-current supply; The tail end X1 of the second coil L2 and the tail end X2 of the 4th coil L4 all connects X binding post; It is characterized in that the every of described quick response magnet controlled reactor also comprises insulated gate bipolar transistor IGBT and damping resistance R mutually; Described damping resistance R is connected between the positive pole of sustained diode 1 and the tail end D11 of the first coil L1; Described insulated gate bipolar transistor IGBT is in parallel with damping resistance R, and its grid G connects the output of IGBT driving chip;
The number of turn between described first tap K11 and the second tap K12 is n1, the first tapping ratio δ of described first coil L1 and the second coil L2
1=
=1.5 ~ 3.0%;
The number of turn between described 3rd tap K21 and the 4th tap K22 is n2, the second tapping ratio δ of described tertiary coil L3 and the 4th coil L4
2=
=15 ~ 20%.
Operation principle of the present invention is as follows:
Fast dynamic response of the present invention comprises two parts, is quick-response excitation and demagnetization fast respectively.Quick-response excitation is realized by the magnet excitation voluntarily of large tapping ratio---and tapping ratio δ increase is exactly the voltage raising of DC excitation power, the corresponding raising of excitation speed; Quick demagnetization, is realized by the damping resistance set up.For encouraging by force of large tapping ratio, do not affect design difficulty and installation cost, the MCR product of current each producer is generally applied, and the effect realizing quick-response excitation there has also been a host of facts confirmation, repeats no more here.
Advantage of the present invention is that realize the fast dynamic response of magnet controlled reactor, simple and practical, reliable height, cost are low owing to adopting damping resistance to realize demagnetization fast.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of existing common magnetron reactor.
Fig. 2 is the circuit theory diagrams of the every phase of the present invention.
Fig. 3 is the theory diagram of linear quadratic control part of the present invention.
Embodiment
Embodiment is known as shown in Figure 1, and response magnet controlled reactor is three-phase or single-phase quick response magnet controlled reactor fast; The every of described quick response magnet controlled reactor comprises symmetrically arranged two iron core column, first to fourth coil L1 ~ L4 of the band tap be enclosed within two iron core column, the first to the second controllable silicon K1 ~ K2, sustained diode 1 mutually; The number of turn of described first to fourth coil L1 ~ L4 is N circle; First coil L1 and the second coil L2 is enclosed within an iron core column, tertiary coil L3 and the 4th coil L4 is enclosed within another iron core column, the tail end D11 of the first coil L1 meets the head end D22 of the 4th coil L4, the head end D12 of the second coil L2 meets the tail end D21 of tertiary coil L3, the positive pole of sustained diode 1 meets the tail end D11 of the first coil L1, and the negative pole of sustained diode 1 meets the tail end D21 of tertiary coil L3; The tap of first to fourth coil L1 ~ L4 is respectively first to fourth tap K11, K12, K21, K22; The anode of the first controllable silicon K1 meets the first tap K11, and its negative electrode meets the second tap K12; The negative electrode of the second controllable silicon K2 meets the 3rd tap K21, and its anode meets the 4th tap K22; The described head end A1 of the first coil L1 and the head end A2 of tertiary coil L3 all connects the A phase connection terminal of three-phase alternating-current supply; The tail end X1 of the second coil L2 and the tail end X2 of the 4th coil L4 all connects X binding post; It is characterized in that the every of described quick response magnet controlled reactor also comprises insulated gate bipolar transistor IGBT and damping resistance R mutually; Described damping resistance R is connected between the positive pole of sustained diode 1 and the tail end D11 of the first coil L1; Described insulated gate bipolar transistor IGBT is in parallel with damping resistance R, and its grid G connects the output of IGBT driving chip;
The number of turn between described first tap K11 and the second tap K12 is n1, the first tapping ratio δ of described first coil L1 and the second coil L2
1=
=1.5 ~ 3.0%;
The number of turn between described 3rd tap K21 and the 4th tap K22 is n2, the second tapping ratio δ of described tertiary coil L3 and the 4th coil L4
2=
=15 ~ 20%.
Linear quadratic control part shown in Fig. 3 is made up of CPU, optical fiber transmission chip, optical fiber receiving chip, IGBT driving chip.
The operation principle of the present embodiment:
In the present embodiment, the first tapping ratio δ
1=1.5 ~ 3.0% is equal with the tapping ratio δ of common magnetron reactor, is called for short common tap, regulated during compensation capacity fuctuation within a narrow range by common tap; Second tapping ratio is δ
2=15 ~ 20%, for encouraging tap by force.Large capacity rise to namely need quick-response excitation time, encourage by force tap and can ensure that the response time is no more than 30mS.Relative to common magnetron reactor, a damping resistance R has been connected in series in sustained diode 1 branch road, damping resistance R is in parallel, and an IGBT(also can be the IGBT of several series connection), during normal work, IGBT is conducting state, damping resistance R is by short circuit, identical with the operating state of common magnetron reactor, when needing to demagnetize fast, only need the CPU of linear quadratic control part by optical fiber to the corresponding signal of IGBT driving chip (as M57962L chip), close IGBT, damping resistance is dropped into, the time constant (τ=L/R) in whole DC excitation loop is because adding of R, what become is very little, as long as damping resistance R selects suitable resistance, enough response speeds fast can be realized.
Now for configuration capacity 10kV10Mvar magnet controlled reactor common in wind energy turbine set, the resistance of analysis and calculation damping resistance.
(1) inductance of magnet controlled reactor is calculated
L=U
2/ω/Q=10.5
2/314/10=35.1（mH）
(2) resistance of damping resistance is calculated
Assuming that the maximum demagnetization time 30mS needed, get stabilization time according to 3 times of time time constants, then:
3* τ=3* L/R≤30mS, formula converts and brings the value of L into thus, can obtain:
R≥3.51Ω。
Claims (1)
1. respond a magnet controlled reactor fast, described quick response magnet controlled reactor is three-phase or single-phase quick response magnet controlled reactor; The every of described quick response magnet controlled reactor comprises symmetrically arranged two iron core column, first to fourth coil L1 ~ L4 of the band tap be enclosed within two iron core column, the first to the second controllable silicon K1 ~ K2, sustained diode 1 mutually; The number of turn of described first to fourth coil L1 ~ L4 is N circle; First coil L1 and the second coil L2 is enclosed within an iron core column, tertiary coil L3 and the 4th coil L4 is enclosed within another iron core column, the tail end D11 of the first coil L1 meets the head end D22 of the 4th coil L4, the head end D12 of the second coil L2 meets the tail end D21 of tertiary coil L3, the positive pole of sustained diode 1 meets the tail end D11 of the first coil L1, and the negative pole of sustained diode 1 meets the tail end D21 of tertiary coil L3; The tap of first to fourth coil L1 ~ L4 is respectively first to fourth tap K11, K12, K21, K22; The anode of the first controllable silicon K1 meets the first tap K11, and its negative electrode meets the second tap K12; The negative electrode of the second controllable silicon K2 meets the 3rd tap K21, and its anode meets the 4th tap K22; The described head end A1 of the first coil L1 and the head end A2 of tertiary coil L3 all connects the A phase connection terminal of three-phase alternating-current supply; The tail end X1 of the second coil L2 and the tail end X2 of the 4th coil L4 all connects X binding post; It is characterized in that the every of described quick response magnet controlled reactor also comprises insulated gate bipolar transistor IGBT and damping resistance R mutually; Described damping resistance R is connected between the positive pole of sustained diode 1 and the tail end D11 of the first coil L1; Described insulated gate bipolar transistor IGBT is in parallel with damping resistance R, and its grid G connects the output of IGBT driving chip;
The number of turn between described first tap K11 and the second tap K12 is n1, the tapping ratio δ of described first coil L1 and the second coil L2
1=
=1.5 ~ 3.0%;
The number of turn between described 3rd tap K21 and the 4th tap K22 is n2, the tapping ratio δ of described tertiary coil L3 and the 4th coil L4
2=
=15 ~ 20%.
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|---|---|---|---|
| CN201210528061.6A CN103066908B (en) | 2012-12-11 | 2012-12-11 | Quick response magnet controlled reactor |
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|---|---|---|---|
| CN201210528061.6A CN103066908B (en) | 2012-12-11 | 2012-12-11 | Quick response magnet controlled reactor |
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| CN103066908B true CN103066908B (en) | 2015-07-29 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795839B (en) * | 2015-04-24 | 2017-03-01 | 国家电网公司 | Improve the system and method for wind generator system low voltage crossing with magnet controlled reactor |
| CN105071407A (en) * | 2015-08-26 | 2015-11-18 | 广东中钰科技股份有限公司 | Magnetically controlled reactor |
| CN106026813B (en) * | 2016-07-28 | 2018-07-03 | 李晓明 | A kind of quick response saturable reactor |
| CN106300384B (en) * | 2016-09-29 | 2019-01-25 | 中冶华天南京电气工程技术有限公司 | It is a kind of can high-speed excitation and demagnetization magnet controlled reactor |
| CN107134957B (en) * | 2017-06-12 | 2019-05-31 | 杭州银湖电气设备有限公司 | Without tap magnet valve structure |
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| CN102244492A (en) * | 2011-07-13 | 2011-11-16 | 国网电力科学研究院 | Excitation method of self-excited magnetic-valve controllable reactor and apparatus thereof |
| CN202978805U (en) * | 2012-12-11 | 2013-06-05 | 河北旭辉电气股份有限公司 | Magnetically controlled reactor with rapid response |
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| JP3379130B2 (en) * | 1993-02-18 | 2003-02-17 | 三菱電機株式会社 | Parallel converter for cycloconverter |
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| CN102244492A (en) * | 2011-07-13 | 2011-11-16 | 国网电力科学研究院 | Excitation method of self-excited magnetic-valve controllable reactor and apparatus thereof |
| CN202978805U (en) * | 2012-12-11 | 2013-06-05 | 河北旭辉电气股份有限公司 | Magnetically controlled reactor with rapid response |
Non-Patent Citations (2)
| Title |
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| 单相磁阀式可控电抗器的设计原理研究;刘言菊等;《电网与清洁能源》;20110731;第27卷(第7期);第36-38页 * |
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