CN103045926B - TiB2/Si-Al electronic packaging composite material and preparation method of TiB2/Si-Al electronic packaging composite material - Google Patents
TiB2/Si-Al electronic packaging composite material and preparation method of TiB2/Si-Al electronic packaging composite material Download PDFInfo
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- CN103045926B CN103045926B CN201210527903.6A CN201210527903A CN103045926B CN 103045926 B CN103045926 B CN 103045926B CN 201210527903 A CN201210527903 A CN 201210527903A CN 103045926 B CN103045926 B CN 103045926B
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Abstract
The invention provides a preparation method of a TiB2/Si-Al composite material, which belongs to the technical field of preparing electronic packaging materials. The preparation method comprises five steps of preparing mixed salt, smelting 60-70wt% of Si-Al alloy, casting and synthesizing TiB2 granules in situ, spraying and depositing to form the TiB2/Si-Al composite material, and performing hot isostatic pressing on the TiB2/Si-Al composite material. The preparation method provided by the invention effectively refines the size of primary crystalline silicon based on not affecting the thermal expansion coefficient, the thermal conductivity and the density of the Si-Al alloy, and solves a coarsening problem of the primary crystalline silicon in the process of heating and heat preservation between two phase areas of the Si-Al alloy. The composite material is widely applied to novel packaging or radiating materials needed by telecommunications, aeronautics, astronautics, national defenses and other relevant industrial electronic devices.
Description
Technical field
The invention belongs to electronic package material preparing technical field, a kind of TiB is particularly provided
2the preparation method of/Si-Al matrix material, under the prerequisite of thermal expansivity, thermal conductivity and density that does not affect Si-Al alloy, refinement primary silicon size solve the problem of primary silicon alligatoring when the heating and thermal insulation of Si-Al alloy two-phase region effectively.This matrix material is widely used in telecommunication, Aeronautics and Astronautics, national defence and other related industries electronic devices and components required novel encapsulated or heat sink material.
Background technology
Si-Al alloy has been proved to be the material system that an over-all properties meets Advanced Electronic Encapsulating requirement substantially.Because: the chips such as the thermal expansivity of (1) material and Si or GaAs match, and size Heat stability is good, can reduce the generation of thermal stresses effectively, do not cause encapsulating housing cracking, defective chip; (2) good heat conductivity, the heat that semi-conductor chip can be produced when working distributes in time.Even if to the Si-Al alloy of (60 ~ 70) wt%Si, its resistivity still can remain on 10
-6Ω m magnitude, in this composition range, alloy substrate still keeps continuous; (3) material has enough strength and stiffness, and its Young's modulus surpasses 110GPa, to chip, can play effective support and provide protection; (4) material source is abundant, and cost is low, can meet the requirement of large-scale commercial application; (5) density of material is low, and (60 ~ 70) wt%Si-Al alloy ratio fine aluminium is also light by 15%, and this is particularly favourable to the encapsulation occasion for aerospace equipment and mobile computing/signal equipment.
Although Si-Al alloy has above-mentioned significant advantage as Advanced Electronic Encapsulating material, but research is generally found both at home and abroad, in the spray forming Si-Al alloy of preparation, Si particle size is not of uniform size, and wherein large Si particle very easily causes the thermal expansivity (CTE) of material part and thermal conductivity to occur significantly to change (depending on that the position contacting with chip is Al or Si).And Si particle is easy to learn plane generation one direction cracking along preferential crystallographic, cause the extremely difficult required high precision quality of external coating that is worked into of material.This badly influences the engineering use value of reaction-injection moulding Electronic Packaging Si-Al series alloy.On the other hand, using spray deposition technology as the means of preparation semi-solid state ingot blank, be really conducive to obtain the equiaxed grain structure that cannot obtain under general founding condition, be applicable to follow-up semi-solid processing.But due to spray forming technology self, in Si-Al series alloy deposit preform, may there is a small amount of loosening, need to make its densification through follow-up semi-solid processing.But in research, find, when jet deposition (60 ~ 70) wt%Si-Al alloy is carried out to two-phase region heating and thermal insulation, usually observe the phenomenon of the obvious alligatoring of primary silicon.Obviously, the result of primary silicon alligatoring has been lost jet deposition Si-Al alloy compared with the performance advantage of fine tissue.Therefore, refinement primary silicon size the problem that solves its alligatoring when the heating and thermal insulation of two-phase region just become the key issue place that promotes the practical application of jet deposition semi-solid state Si-Al alloy effectively.
In the recent period, the applicant has developed the synthetic and reaction-injection moulding particles reiforced metal-base composition technology of preparing of a kind of founding-original position.Utilize TiC/7075 matrix material prepared by this technology to be formed by tiny equiaxed grain structure.In the insulating process of high temperature two-phase region, grain coarsening speed in TiC/7075 sample very slowly (is only grown up to approximately 42 μ m from 35 μ m after 30 minutes 630 ℃ of insulations), merely through the sample contrast of jet deposition, there is grain growth (growing up to approximately 150 μ m after 30 minutes 600 ℃ of insulations) sharply in the latter with same sample ingredient 7075 alloys.As everyone knows, TiC is grain-refining agent conventional in aluminium alloy.But when the synthetic TiC particle of founding-original position and reaction-injection moulding (60 ~ 70) wt%Si-Al alloy technology are combined, find that TiC, in Si-Al alloy melt, decomposition has occurred, generated the ternary compound of Ti-Al-Si complexity.Think, the decomposition of TiC is relevant with Si content high in melt.Because Ti is the element that surfactivity is very strong, in (60 ~ 70) wt%Si-Al alloy melt process of setting, be easily adsorbed on the growth surface of primary crystal Si.Ti is also inhomogeneous in the growth surface distribution of primary silicon, easily in its twin groove and surperficial recess enrichment, causes the Ti at this place to be difficult to spread in melt.When Ti is enriched to a certain degree, surpasses its saturation value, just with the form of Ti-Al-Si Ternary intermetallic compounds, separate out.
Summary of the invention
The object of the invention is to: a kind of TiB is provided
2the preparation method of/Si-Al matrix material, under the prerequisite of thermal expansivity, thermal conductivity and density that does not affect Si-Al alloy, refinement primary silicon size solve the problem of its alligatoring when the heating and thermal insulation of Si-Al alloy two-phase region effectively.
A kind of TiB
2/ Si-Al electronic packaging composite material, its chemical constitution is xTiB by weight percentage
2/ ySi-Al, 1.0≤x≤2.0 wherein, 60≤y≤70.
TiB as above
2/ Si-Al electronic packaging composite material preparation method, is characterized in that: technological process comprise preparation mixing salt, the synthetic TiB of melting (60 ~ 70) wt%Si-Al alloy, founding-original position
2particle, jet deposition formation TiB
2/ Si-Al matrix material and TiB
2/ Si-Al matrix material hot isostatic pressing double teacher.Concrete grammar is as follows:
1, preparation mixing salt: press atom metering than Ti:B=1:2.2 proportioning K
2tiF
6and KBF
4(purity is all higher than 97wt%) mixing salt, mixes and through 300 ℃ of oven dry.
2, melting (60 ~ 70) wt%Si-Al alloy: will account for the pure Si of (60 ~ 70) wt%, all the other are put into medium-frequency induction furnace intensification for the starting material of industrial pure Al and melt.Pure Si and industrial pure Al are block.Purity is respectively 98wt% and 99.7wt%, and lumpiness is 4～6mm.
3, the synthetic TiB of founding-original position
2particle: above-mentioned (60 ~ 70) wt%Si-Al alloy melt is heated to above 50～150 ℃ of insulations of fusing point and makes its homogenizing for 5-15 minute.Then, add rapidly 0.8--2.5% K
2tiF
6and KBF
4mixing salt.With graphite whisker, fully stir after 5～15 minutes and be incubated again 15 minutes.Remove surperficial residue.
4, jet deposition formation TiB
2/ Si-Al matrix material: utilize jet deposition formation technology to prepare TiB
2/ Si-Al matrix material.Spray deposition processing parameter is selected as follows: atomizing gas: nitrogen or argon gas, purity is respectively: 99.8 and 99.9%.Atomizing pressure: 0.6～0.8MPa; Deposition distance: 610～650mm; Draft-tube diameter: 4.0～4.3mm.
5, TiB
2/ Si-Al matrix material hot isostatic pressing: reaction-injection moulding TiB
2the densification of/Si-Al matrix material is carried out on QIH-15 type hot isostatic pressing trier.Heat and other static pressuring processes parameter is selected as follows: pressure 150～170MPa, 580～620 ℃ of temperature, pressurize 4h.Working medium is argon gas.
Novelty of the present invention is embodied in the synthetic TiB of founding-original position
2particle and reaction-injection moulding (60 ~ 70) wt%Si-Al alloy technology combines to prepare TiB
2/ Si-Al matrix material.TiB
2have and hexagonal system C32 type structure like graphite-like.Crystal structure analysis shows between the B-B atom of (0001) face, to have high shared electrons number and bond energy, adds that between interlayer B-Ti atom, 6 actings in conjunction that are equal to key make TiB
2there is the thermostability higher than TiC.Meanwhile, TiB
2thermal expansivity be 4.6 * 10
-6k
-1, approach with Si-Al alloy.Although TiB
2thermal conductivity (25W/mK) far below the thermal conductivity of Si-Al alloy, but due to the synthetic TiB of original position
2particle mainly plays the migration of refinement primary silicon size and inhibition (60 ~ 70) wt%Si-Al series alloy crystal boundary liquid film in the insulating process of high temperature two-phase region, slows down the effect of primary silicon coarsening behavior, so TiB
2add-on can get by experiment its lower value, make thermal expansivity, thermal conductivity and the density of its unlikely remarkably influenced Si-Al alloy.
The present invention is not affecting under the prerequisite of the thermal expansivity of Si-Al alloy, thermal conductivity and density, refinement primary silicon size effectively, and solved the problem of its alligatoring when the heating and thermal insulation of Si-Al alloy two-phase region.This matrix material is widely used in telecommunication, Aeronautics and Astronautics, national defence and other related industries electronic devices and components required novel encapsulated or heat sink material.
Accompanying drawing explanation
Fig. 1 is jet deposition (a) 1.0wt%TiB
2/ 60Si-Al (b) 2.0wt%TiB
2the XRD figure of/60Si-Al matrix material.
Fig. 2 is the microtexture of jet deposition 70Si-Al alloy deposition base.
Fig. 3 is jet deposition (a) 1.0wt%TiB
2/ 70Si-Al (b) 2.0wt%TiB
2the microtexture of/70Si-Al.
Shown in Fig. 4 is jet deposition 60Si-Al alloy and 1.0wt%TiB
2/ 60Si-Al matrix material primary silicon phase average size is with the variation relation of soaking time.Visible, add 1.0wt%TiB
2after particle, in composite material semi-solid state tissue, primary silicon mean sizes is generally lower than the mean sizes of primary silicon in matrix alloy.Show TiB
2particle has suppressed growing up of primary silicon in composite material semi-solid state second-heating insulating process.
Fig. 5 has contrasted Si-Al alloy and TiB after hot isostatic pressing
2the thermal expansivity of/Si-Al matrix material.Visible, at the same temperature, TiB
2the thermal expansivity of/Si-Al matrix material is lower than the thermal expansivity of corresponding Si-Al alloy.This is due to TiB
2thermal expansivity (4.6 * 10
-6k
-1) lower than the thermal expansivity of 60Si-Al and 70Si-Al alloy, (be respectively 9.0 ~ 11.0 * 10
-6k
-1with 7.0 ~ 8.0 * 10
-6k
-1) cause.
Shown in Fig. 6 is TiB after hot isostatic pressing
2the thermal conductivity variation with temperature relation of/Si-Al matrix material.Visible, 1.0wt%TiB
2/ 60Si-Al, 2.0wt%TiB
2/ 60Si-Al, 1.0wt%TiB
2/ 70Si-Al and 2.0wt%TiB
2the thermal conductivity of tetra-kinds of matrix materials of/70Si-Al in the time of 25 ℃ is respectively 128Wm
-1k
-1, 125Wm
-1k
-1, 106Wm
-1k
-1and 107Wm
-1k
-1, thermal conductivity (the about 110Wm with 60Si-Al and 70Si-Al when the same temperature
-1k
-1) quite.
Embodiment
Embodiment 1
Preparation 1.0wt%TiB
2/ 60wt%Si-Al matrix material.By lumpiness, be that 4～6mm, weight are that the pure Si of 18 kilograms and the industrial pure Al of 12 kilograms are put into medium-frequency induction furnace crucible, heat up and make its fusing.Be heated to 1130 ℃, be incubated 15 minutes.Then add the K that accounts for melt 1.0wt%
2tiF
6and KBF
4mixing salt.With graphite whisker, fully stir after 10 minutes and be incubated again 15 minutes.Remove surperficial residue.By jet deposition formation method, prepare 1.0wt%TiB
2/ 60wt%Si-Al matrix material.Processing parameter is selected as follows: atomizing gas: nitrogen; Atomizing pressure: 0.7MPa; Deposition distance: 610mm; Draft-tube diameter: 4.0mm.Heat and other static pressuring processes parameter is selected as follows: pressure 150MPa, 590 ℃ of temperature, pressurize 4h.Working medium is argon gas.In the time of 25 ℃, 1.0wt%TiB
2the thermal expansivity of/60wt%Si-Al matrix material is 8.6 * 10
-6k
-1, thermal conductivity is 128Wm
-1k
-1, density is 2.483g.cm
-3.
Embodiment 2
Preparation 1.0wt%TiB
2/ 70wt%Si-Al matrix material.By lumpiness, be that 4～6mm, weight are that the pure Si of 21 kilograms and the industrial pure Al of 9 kilograms are put into medium-frequency induction furnace crucible, heat up and make its fusing.Be heated to 1210 ℃, be incubated 15 minutes.Then add the K that accounts for melt 1.0wt%
2tiF
6and KBF
4mixing salt.With graphite whisker, fully stir after 10 minutes and be incubated again 15 minutes.Remove surperficial residue.By jet deposition formation method, prepare 1.0wt%TiB
2/ 70wt%Si-Al matrix material.Processing parameter is selected as follows: atomizing gas: argon gas; Atomizing pressure: 0.8MPa; Deposition distance: 640mm; Draft-tube diameter: 4.1mm.Heat and other static pressuring processes parameter is selected as follows: pressure 165MPa, 600 ℃ of temperature, pressurize 4h.Working medium is argon gas.In the time of 25 ℃, 1.0wt%TiB
2the thermal expansivity of/70wt%Si-Al matrix material is 6.7 * 10
-6k
-1, thermal conductivity is 106Wm
-1k
-1, density is 2.441g.cm
-3.
Embodiment 3
Preparation 2.0wt%TiB
2/ 60wt%Si-Al matrix material.By lumpiness, be that 4～6mm, weight are that the pure Si of 18 kilograms and the industrial pure Al of 12 kilograms are put into medium-frequency induction furnace crucible, heat up and make its fusing.Be heated to 1130 ℃, be incubated 15 minutes.Then add the K that accounts for melt 2.0wt%
2tiF
6and KBF
4mixing salt.With graphite whisker, fully stir after 10 minutes and be incubated again 15 minutes.Remove surperficial residue.By jet deposition formation method, prepare 2.0wt%TiB
2/ 60wt%Si-Al matrix material.Processing parameter is selected as follows: atomizing gas: argon gas; Atomizing pressure: 0.8MPa; Deposition distance: 620mm; Draft-tube diameter: 4.2mm.Heat and other static pressuring processes parameter is selected as follows: pressure 170MPa, 600 ℃ of temperature, pressurize 4h.Working medium is argon gas.In the time of 25 ℃, 2.0wt%TiB
2the thermal expansivity of/60wt%Si-Al matrix material is 8.3 * 10
-6k
-1, thermal conductivity is 125Wm
-1k
-1, density is 2.494g.cm
-3.
Embodiment 4
Preparation 2.0wt%TiB
2/ 70wt%Si-Al matrix material.By lumpiness, be that 4～6mm, weight are that the pure Si of 21 kilograms and the industrial pure Al of 9 kilograms are put into medium-frequency induction furnace crucible, heat up and make its fusing.Be heated to 1210 ℃, be incubated 15 minutes.Then add the K that accounts for melt 2.0wt%
2tiF
6and KBF
4mixing salt.With graphite whisker, fully stir after 10 minutes and be incubated again 15 minutes.Remove surperficial residue.By jet deposition formation method, prepare 2.0wt%TiB
2/ 70wt%Si-Al matrix material.Processing parameter is selected as follows: atomizing gas: argon gas; Atomizing pressure: 0.8MPa; Deposition distance: 650mm; Draft-tube diameter: 4.3mm.Heat and other static pressuring processes parameter is selected as follows: pressure 170MPa, 600 ℃ of temperature, pressurize 4h.Working medium is argon gas.In the time of 25 ℃, 1.0wt%TiB
2the thermal expansivity of/70wt%Si-Al matrix material is 6.5 * 10
-6k
-1, thermal conductivity is 107Wm
-1k
-1, density is 2.453g.cm
-3.
Shown in table 1 is TiB after hot isostatic pressing
2the density of/Si-Al matrix material.Visible, TiB
2the density of/Si-Al matrix material and the density of 60Si-Al (about 2.4g.cm
-3) quite.
Table 1
Claims (2)
1. a TiB
2the preparation method of/Si-Al electronic packaging composite material, is characterized in that: the chemical constitution of this matrix material is xTiB by weight percentage
2/ ySi-Al, 1.0≤x≤2.0 wherein, 60≤y≤70, preparation process comprise preparation mixing salt, melting (60
-70) wt%Si-Al alloy, the synthetic TiB2 particle of founding-original position, jet deposition formation TiB
2/ Si-Al matrix material and TiB
2/ Si-Al matrix material hot isostatic pressing double teacher; Concrete preparation process is:
A, preparation mixing salt: press atom metering than Ti:B=1:2.2 proportioning K
2tiF
6and KBF
4mixing salt, mixes and through 300 ℃ of oven dry;
B, melting (60
-70) wt%Si-Al alloy: will account for (60
-70) the pure Si of wt%, all the other are put into medium-frequency induction furnace intensification for the starting material of industrial pure Al and melt;
C, the synthetic TiB of founding-original position
2particle: by described in step b (60
-70) wt%Si-Al alloy melt is heated to above 50～150 ℃ of insulations of fusing point and within 5-15 minute, makes its homogenizing; Then, add rapidly the K described in 0.8--2.5% step a
2tiF
6and KBF
4mixing salt, fully stirs after 5～15 minutes and is incubated 15 minutes again with graphite whisker, removes surperficial residue;
D, jet deposition formation TiB
2/ Si-Al matrix material: utilize jet deposition formation technology to prepare TiB
2/ Si-Al matrix material, spray deposition processing parameter is selected as follows: atomizing gas: nitrogen or argon gas, purity is respectively: 99.8 and 99.9%; Atomizing pressure: 0.6～0.8MPa; Deposition distance: 610～650mm; Draft-tube diameter: 4.0～4.3mm;
E, TiB
2/ Si-Al matrix material hot isostatic pressing: reaction-injection moulding TiB
2the densification of/Si-Al matrix material is carried out on QIH-15 type hot isostatic pressing trier; Heat and other static pressuring processes parameter is selected as follows: pressure 150～170MPa, and 580～620 ℃ of temperature, pressurize 4h, working medium is argon gas.
2. described a kind of TiB according to claim 1
2the preparation method of/Si-Al electronic packaging composite material, is characterized in that: described K
2tiF
6and KBF
4purity all higher than 97wt%; Pure Si and industrial pure Al are block, and purity is respectively 98wt% and 99.7wt%, and lumpiness is 4～6mm.
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|---|---|---|---|
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|---|---|---|---|
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| CN105986134A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon aluminum alloy electronic packaging material |
| CN105986132A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification |
| CN107737941A (en) * | 2017-11-02 | 2018-02-27 | 长沙新材料产业研究院有限公司 | TiB for increasing material manufacturing2Strengthen the preparation method of Al alloy powder |
| CN108746625A (en) * | 2018-06-26 | 2018-11-06 | 中南大学 | A kind of preparation method of aluminum-base nano composite material |
| CN112940572A (en) * | 2021-02-01 | 2021-06-11 | 廊坊艾格玛新立材料科技有限公司 | Acrylic silicon-aluminum composite high-heat-dissipation powder coating and preparation process thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214011A (en) * | 1991-08-30 | 1993-05-25 | Bfd, Incorporated | Process for preparing ceramic-metal composite bodies |
| JP2001288526A (en) * | 2000-04-04 | 2001-10-19 | Sumitomo Special Metals Co Ltd | Heat radiating material and its production method |
| KR20040084315A (en) * | 2003-03-27 | 2004-10-06 | 이정일 | Method for fabrication of high silicon Al-Si alloy for electronic packaging material by vacuum arc melting method |
| CN102114541A (en) * | 2009-12-30 | 2011-07-06 | 北京有色金属研究总院 | Preparation process of high volume fraction silicon particle enhanced aluminum based composite material |
| CN102534321A (en) * | 2012-03-06 | 2012-07-04 | 上海驰韵新材料科技有限公司 | Process for preparing Si-Al alloy electronic packaging material by spray deposition |
-
2012
- 2012-12-10 CN CN201210527903.6A patent/CN103045926B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214011A (en) * | 1991-08-30 | 1993-05-25 | Bfd, Incorporated | Process for preparing ceramic-metal composite bodies |
| JP2001288526A (en) * | 2000-04-04 | 2001-10-19 | Sumitomo Special Metals Co Ltd | Heat radiating material and its production method |
| KR20040084315A (en) * | 2003-03-27 | 2004-10-06 | 이정일 | Method for fabrication of high silicon Al-Si alloy for electronic packaging material by vacuum arc melting method |
| CN102114541A (en) * | 2009-12-30 | 2011-07-06 | 北京有色金属研究总院 | Preparation process of high volume fraction silicon particle enhanced aluminum based composite material |
| CN102534321A (en) * | 2012-03-06 | 2012-07-04 | 上海驰韵新材料科技有限公司 | Process for preparing Si-Al alloy electronic packaging material by spray deposition |
Non-Patent Citations (2)
| Title |
|---|
| "Effect of TiB2 addition on microstructure of spray-formed Si-30Al composite";GAN Gui-sheng等;《Transactions of Nonferrous Metals Society of China》;20111031;第21卷(第10期);第2242-2243页 * |
| GAN Gui-sheng等."Effect of TiB2 addition on microstructure of spray-formed Si-30Al composite".《Transactions of Nonferrous Metals Society of China》.2011,第21卷(第10期), |
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