CN103022259B - A kind of method of solar battery sheet plated film - Google Patents
A kind of method of solar battery sheet plated film Download PDFInfo
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- CN103022259B CN103022259B CN201210585663.5A CN201210585663A CN103022259B CN 103022259 B CN103022259 B CN 103022259B CN 201210585663 A CN201210585663 A CN 201210585663A CN 103022259 B CN103022259 B CN 103022259B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of method of solar battery sheet plated film.Be characterized in, comprise the steps: that (1) sends 21 graphite boats being plugged silicon chip to boiler tube; (2) vacuumize, reach 35 millitorrs to boiler tube internal pressure; (3) pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, discharges 200 seconds; (4) vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, then vacuumize, after repeating twice, recover normal pressure; (5) vacuumize, when reaching 35 millitorr to pressure, pass into ammonia, pre-deposition 150 seconds, then pass into silane, continuous discharge 700 seconds; (6) stop ventilation, vacuumize, pass into nitrogen, then vacuumize; (7) discharging.After adopting method of the present invention, red that produces in PECVD operation can well be solved, aberration sheet problem, make film look meet technological requirement.
Description
Technical field
The present invention relates to a kind of method of solar battery sheet plated film.
Background technology
Solar energy is a kind of important clean energy resource, solar battery sheet is device solar energy being changed into electric energy, solar battery sheet production technology more complicated, in order to reduce the reflection of sunlight, the method usually taked is coated with antireflection film on solar battery sheet.By PECVD (PlasmaEnhancedChemicalVaporDeposition, plasma enhanced chemical vapor deposition method) technology deposits one deck silicon nitride film at the surface of solar battery sheet, operation principle is the gas ionization that high-frequency current makes containing film composed atom, be partially formed plasma, the plasma that chemism is very strong is easy to react, and substrate is formed required film.Can be good at reducing the reflection of sunlight at silicon chip surface, reduce reflectivity.
But existing technique can not meet the requirement of 21 graphite boats, there will be aberration, rubescent, particularly serious especially in fire door performance, finally can affect the transformation efficiency of battery.
Summary of the invention
The object of this invention is to provide a kind of method of solar battery sheet plated film, film look can be made to meet technological requirement, substantially stop rubescent phenomenon.
A method for solar battery sheet plated film, its special feature is, comprises the steps:
(1) 21 graphite boats being plugged silicon chip are sent to boiler tube;
(2) vacuumize, reach 35 millitorrs to boiler tube internal pressure;
(3) pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, discharges 200 seconds;
(4) vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, then vacuumize, after repeating twice, recover normal pressure;
(5) vacuumize, when reaching 35 millitorr to pressure, pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, pre-deposition 150 seconds, then passes into silane, to pressure stability at 1600 millitorrs, and continuous discharge 700 seconds;
(6) stop ventilation, vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, then vacuumize, after repeating twice, recover normal pressure;
(7) discharging.
Control reaction temperature and remain on 420-430 DEG C, silane ammonia ratio is 800: 7000, and reaction pressure controls at 1600 millitorr-1800 millitorrs.
Discharge power adjusts to 6300-6500w, and pulse switch ratio is adjusted to 4: 45-47.
Pass into nitrogen 6000sccm, 20 seconds time.
After adopting method of the present invention, red that produces in PECVD operation can well be solved, aberration sheet problem, make film look meet technological requirement.
Embodiment
Embodiment 1:
A method for solar battery sheet plated film, comprises the steps:
(1) 21 graphite boats being plugged silicon chip are sent to boiler tube (tubular type PECVD filming equipment);
(2) vacuumize, reach 35 millitorrs to boiler tube internal pressure;
(3) pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, discharges 200 seconds;
(4) vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen 6000sccm, 20 seconds time, then vacuumize, after repeating twice, recover normal pressure;
(5) vacuumize, when reaching 35 millitorr to pressure, pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, pre-deposition 150 seconds, then passes into silane, to pressure stability at 1600 millitorrs, and continuous discharge 700 seconds;
(6) stop ventilation, vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen 6000sccm, 20 seconds time, then vacuumize, after repeating twice, recover normal pressure;
(7) discharging.
Control reaction temperature in reaction and remain on 425 DEG C, silane ammonia ratio is 800: 7000, and reaction pressure controls at 1600 millitorrs, and discharge power adjusts to 6500w, and pulse switch ratio is adjusted to 4: 47.
The thickness of the silicon nitride film of final formation is at about 84nm, and uniformity ± 4% between sheet, aberration, rubescent phenomenon, do not appear in uniformity ± 4% between batch.
Embodiment 2:
A method for solar battery sheet plated film, comprises the steps:
(1) 21 graphite boats being plugged silicon chip are sent to boiler tube;
(2) vacuumize, reach 35 millitorrs to boiler tube internal pressure;
(3) pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, discharges 200 seconds;
(4) vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen 6000sccm, 20 seconds time, then vacuumize, after repeating twice, recover normal pressure;
(5) vacuumize, when reaching 35 millitorr to pressure, pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, pre-deposition 150 seconds, then passes into silane, to pressure stability at 1600 millitorrs, and continuous discharge 700 seconds;
(6) stop ventilation, vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen 6000sccm, 20 seconds time, then vacuumize, after repeating twice, recover normal pressure;
(7) discharging.
Control reaction temperature in reaction and remain on 425 DEG C, silane ammonia ratio is 800: 7000, and reaction pressure controls at 1600 millitorrs, and discharge power adjusts to 6300w, and pulse switch ratio is adjusted to 4: 45.
The silicon nitride thickness of final formation is at about 82nm, and uniformity ± 4% between sheet, aberration, rubescent phenomenon, do not appear in uniformity ± 4% between batch.
Claims (1)
1. a method for solar battery sheet plated film, is characterized in that, comprises the steps:
(1) 21 graphite boats being plugged silicon chip are sent to boiler tube;
(2) vacuumize, reach 35 millitorrs to boiler tube internal pressure;
(3) pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, discharges 200 seconds;
(4) vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, then vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, then vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, recover normal pressure;
(5) vacuumize, when reaching 35 millitorr to pressure, pass into ammonia, make boiler tube internal pressure reach 1600 millitorrs, temperature controls at 425 DEG C, pre-deposition 150 seconds, then passes into silane, to pressure stability at 1600 millitorrs, and continuous discharge 700 seconds;
(6) stop ventilation, vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, then vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, then vacuumize, when reaching 35 millitorr to pressure, pass into nitrogen, recover normal pressure;
(7) discharging;
Control reaction temperature in step (5) and remain on 420-430 DEG C, silane ammonia is than being 800sccm:7000sccm, and reaction pressure controls at 1600 millitorr-1800 millitorrs; Discharge power adjusts to 6300-6500w, and pulse switch ratio is adjusted to 4:45-47;
Pass into nitrogen in step (4) and step (6) specifically to refer to and pass into nitrogen 6000sccm, 20 seconds time.
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CN201210585663.5A CN103022259B (en) | 2012-12-31 | 2012-12-31 | A kind of method of solar battery sheet plated film |
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CN103560171B (en) * | 2013-10-29 | 2016-09-28 | 宁夏银星能源股份有限公司 | A kind of method that solaode graphite boat is saturated |
CN108183149A (en) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | A kind of production method of solar battery sheet |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101989623A (en) * | 2009-08-07 | 2011-03-23 | 比亚迪股份有限公司 | Solar battery reducing reflection coating and preparation method thereof |
CN102339872A (en) * | 2011-09-28 | 2012-02-01 | 湖南红太阳新能源科技有限公司 | Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film |
CN102623572A (en) * | 2012-04-13 | 2012-08-01 | 英利能源(中国)有限公司 | Method for producing deposition anti-reflection film of crystalline silicon solar cell |
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KR20120011337A (en) * | 2010-07-19 | 2012-02-08 | 삼성전자주식회사 | a solar cell and manufacturing method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN101989623A (en) * | 2009-08-07 | 2011-03-23 | 比亚迪股份有限公司 | Solar battery reducing reflection coating and preparation method thereof |
CN102339872A (en) * | 2011-09-28 | 2012-02-01 | 湖南红太阳新能源科技有限公司 | Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film |
CN102623572A (en) * | 2012-04-13 | 2012-08-01 | 英利能源(中国)有限公司 | Method for producing deposition anti-reflection film of crystalline silicon solar cell |
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Inventor after: Xie Yucai Inventor after: Chen Ganggang Inventor after: Ding Jiye Inventor after: An Baijun Inventor after: Wang Xiong Inventor after: Yuan Jiaxin Inventor before: Xie Yucai Inventor before: Chen Ganggang |
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