CN103021818A - Conformal microstructure transfer method - Google Patents

Conformal microstructure transfer method Download PDF

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CN103021818A
CN103021818A CN201210593568XA CN201210593568A CN103021818A CN 103021818 A CN103021818 A CN 103021818A CN 201210593568X A CN201210593568X A CN 201210593568XA CN 201210593568 A CN201210593568 A CN 201210593568A CN 103021818 A CN103021818 A CN 103021818A
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microstructure
conformal
oxide layer
buried oxide
substrate
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CN201210593568XA
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CN103021818B (en
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狄增峰
郭庆磊
张苗
魏星
薛忠营
母志强
戴佳赟
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中国科学院上海微系统与信息技术研究所
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Abstract

The invention provides a conformal microstructure transfer method. The method at least includes: providing an XOI (X on insulator) substrate comprising bottom silicon, an buried oxide layer and a top X nano-film sequentially from top to bottom, coating the top X nano-film with dumbbell-shaped photoresist used as a mask, and etching to obtain a dumbbell-shaped microstructure; corroding the buried oxide layer by hydrofluoric acid solution or BOE (buffer oxide etch) solution until a middle patterned microbelt part of the microstructure is totally suspended in air and part of the buried oxide layer not completely corroded below two end areas of the microstructure remains, and forming fixed junctions; and providing a base plate to contact with the microstructure, and quickly lifting the base plate to transfer the microstructure to the base plate. The microstructure nano-film is fixed according to the simple design of graph fixation by ends, full conformal transfer is achieved, complexity in conformal transfer process is lowered greatly, and process cost is lowered.

Description

微结构保角性转移方法 Microstructure transfer method of conformal

技术领域 FIELD

[0001] 本发明属于微电子领域,涉及ー种薄膜转移方法,特别是涉及ー种微结构保角性转移方法。 [0001] The present invention belongs to the field of microelectronics, relates to a film transfer method ー species, particularly to conformal ー kind of microstructure transfer method.

背景技术 Background technique

[0002] 近年来,随着人们对便携式电子器件的技术要求的提高,柔性电子技术的迅速发展而受到广泛关注,成为研究及应用热点。 [0002] In recent years, with the improvement of people's technical requirements for portable electronic devices, the rapid development of flexible electronics technology and received extensive attention and become a hot research and application. 柔性电子技术就是将传统刚性衬底上的薄膜材料以及功能器件转移至柔性衬底,从而到达可弯曲、可拉伸甚至可折叠的技术要求。 Electronic technology is a flexible film material and a functional device on a conventional flexible substrate to a rigid substrate transfer, so as to achieve flexible, stretchable technical requirements even foldable.

[0003] 在柔性技术中,首先将传统刚性衬底上的图形化微型结构,尤其是微米带转移至柔性衬底;其次利用传统的エ艺技术条件利用柔性衬底上的图形化微型结构制作柔性电子器件。 [0003] In the art a flexible, micro-structure is first patterned on a conventional rigid substrates, in particular with a micrometer was transferred to a flexible substrate; Second Ester arts using conventional patterning techniques using conditions microstructure produced on a flexible substrate flexible electronic device. 在这ー过程中,要求刚性衬底上的图形化的微米带结构在转移至柔性衬底上后,其排列次序不变,即实现保角性转移。ー In this process, the required pattern of the belt structure microns on a rigid substrate after the transfer onto a flexible substrate, which is arranged in the same order, i.e., to achieve conformal metastasis. 由此可见,如何将排列整齐的硅微型结构保角性转移至柔性衬底显得格外重要。 Thus, how neat conformal silicon microstructure to a flexible substrate transferase is particularly important.

[0004] 最初的柔性技术中,并没有对保角性转移做出特别要求。 [0004] The first flexible art, and no diagonal transfer of security make a special request. 传统的转移方法,在腐蚀掉中间埋氧层的时候,顶层纳米薄膜材料会落至硅衬底上并与其接触,两者之间以范德瓦耳斯カ相连接。 Conventional transfer method, when the buried oxide layer is etched away in the middle, top layer of the nano thin film material will fall onto the silicon substrate and in contact with, to Van der Waals grades connected therebetween. 在腐蚀完埋氧层、顶层纳米薄膜落至硅衬底上的过程中,会导致图形阵列的偏移,同时,在腐蚀完毕最终从HF酸或BOE溶液中取出的时候,由于溶液的表面张カ较大,会导致仅仅依靠较微弱的范德瓦耳斯カ相连接的纳米薄膜与硅衬底之间发生相对滑移,再一次导致图形阵列偏移。 After etching the buried oxide layer, the top layer down to the thin films on a silicon substrate in the process, will result in the offset graphics array, while, when etching is completed finally withdrawn from the HF acid or BOE solution, since the surface tension of the solution ka large, will cause relative slippage between alone weaker van der Waals ka connected to the silicon substrate thin films, again leading to an offset graphics array. 然而随着柔性技术的发展,保角性转移越来越受到人们的关注。 However, with the development of flexible technology, conformal transfers more and more people's attention. 目前,实现微米带保角性转移的主要方法是通过多步光刻及刻蚀,利用光刻胶作为围墙来固定图形化微米帯。 Currently, the main method of micron-angle-transfer belt protection by multi-step photolithography and etching, using the photoresist pattern as a fixed wall of Bands microns. 由于多步光刻甚至套刻的エ艺以及多步刻蚀导致该过程较为复杂,在エ业上造成成本较高。 Since the multi-step photolithography and even overlay of Ester Arts and cause the multi-step etching process is more complex, resulting in higher costs on Ester industry.

发明内容 SUMMARY

[0005] 鉴于以上所述现有技术的缺点,本发明的目的在于提供一种微结构保角性转移方法,用于解决现有技术中微结构保角性转移エ艺复杂、成本较高的问题。 [0005] In view of the foregoing disadvantages of the prior art, an object of the present invention is to provide a micro-conformal structure of transfer method, for solving the prior art microstructure conformal transfers Ester arts complex, high cost problem.

[0006] 为实现上述目的及其他相关目的,本发明提供一种保角性转移方法,所述保角性转移方法至少包括以下步骤: [0006] To achieve the above objects and other related objects, the present invention provides a method of conformal transfers, transfers the conformal method comprising at least the steps of:

[0007] I)提供XOI衬底,所述XOI衬底自下而上依次为底层硅、埋氧层及顶层X纳米薄膜; [0007] I) providing a substrate XOI, XOI the underlying silicon substrate is from bottom to top, the buried oxide layer and the top thin films X;

[0008] 2)在所述顶层X纳米薄膜上涂覆预设图形的光刻胶,所述预设图形为哑铃状; [0008] 2) a predetermined pattern of photoresist coating on top of the thin films X, the predetermined pattern is a dumbbell;

[0009] 3)对所述顶层X纳米薄膜进行刻蚀以将所述顶层X纳米薄膜进行图案化,形成预设图形的微结构;所述微结构包括两端区域及连接于所述两端区域之间的中间图形; [0009] 3) of the top layer film is etched nano-X to the top layer of the nano X thin film is patterned to form a predetermined pattern of microstructures; the microstructure comprises end regions and is connected to the two ends pattern between the intermediate region;

[0010] 4)采用湿法腐蚀将所述埋氧层进行腐蚀,直至所述中间图形部分完全悬空,且所述两端区域以下仍有部分未被完全腐蚀掉的埋氧层; [0010] 4) wet etch the buried oxide layer is etched until the intermediate pattern part is completely vacant, and the both ends are still some areas not fully etched buried oxide layer;

[0011] 5)提供一基板,将所述基板与所述微结构相接触,并迅速提起以将所述微结构自所述未被腐蚀掉的埋氧层处撕裂并转移到所述基板上,所述微结构两端区域与所述未被完全腐蚀掉的埋氧层相接触的部分留在所述未被完全腐蚀掉的埋氧层上。 [0011] 5) providing a substrate, the substrate is in contact with the microstructure, and to quickly lift from the microstructure of the oxide layer is not etched at the buried tear and transferred to the substrate on the part in contact with the not completely etched buried oxide layer of the micro-domain structure left on both ends of the not completely etched buried oxide layer.

[0012] 可选地,所述刻蚀采用反应离子刻蚀。 [0012] Alternatively, the etching by reactive ion etching.

[0013] 可选地,所述顶层X纳米薄膜的X为硅、锗或II1-V族化合物。 [0013] Alternatively, the top layer NANOFILM X X is silicon, germanium or II1-V compound.

[0014] 可选地,所述顶层X纳米薄膜的厚度范围为10nnT200nm。 [0014] Alternatively, the thickness of the top layer is a thin film nano-X 10nnT200nm.

[0015] 可选地,所述基板为柔性衬底。 [0015] Alternatively, the substrate is a flexible substrate.

[0016] 可选地,所述柔性衬底的材料为聚ニ甲基硅氧烷、聚甲基丙烯酸甲酷、聚酰亚胺或蚕丝蛋白。 [0016] Alternatively, the flexible substrate material is poly methyl siloxane Ni, cool polymethyl methacrylate, polyimide, or fibroin. [0017] 可选地,所述中间图形为微米带或亚微米帯。 [0017] Alternatively, the intermediate band pattern of micron or submicron Bands.

[0018] 可选地,所述中间图形的宽度范围为liinT500iim。 [0018] Alternatively, the width of said intermediate pattern is liinT500iim.

[0019] 可选地,所述湿法腐蚀采用氢氟酸或BOE溶液。 [0019] Alternatively, the wet etching using hydrofluoric acid or BOE solution.

[0020] 如上所述,本发明的微结构保角性转移方法,具有以下有益效果:将待转移的微结构设计为哑铃状,由于微结构两端区域尺寸相较于中间图形尺寸较大,而氢氟酸腐蚀埋氧层时腐蚀速度是各向同性的,所以在氢氟酸侧向腐蚀纳米薄膜底下的埋氧层时,较小尺寸的中间图形下面的埋氧层会优先腐蚀完毕,而较大尺寸的两端区域下面依然会有部分埋氧层存在,形成固定结来固定微结构,避免了腐蚀完毕后所引起的图形滑移以及从腐蚀液中取出时由于溶液的表面张カ所引起的排列次序混乱,从而实现保角性转移。 [0020] As described above, the conformal method for transferring a microstructure of the present invention has the following advantages: the microstructure to be transferred to the design of dumbbell, since both ends of the microstructures as compared to the larger size of the intermediate area image size, while the hydrofluoric acid etching of the buried oxide layer is isotropic etching rate, so that the thin film side under the hydrofluoric acid etching of nano buried oxide layer, the middle figure the following smaller size preferentially etching the buried oxide layer is completed, following the end regions will still be part of a larger size buried oxide layer is present, to form a fixed tie to secure the microstructure pattern to avoid slippage caused after etching is completed and when removed from the etching solution due to the surface tension of the solution ka confusion caused arrangement order to achieve conformal metastasis. 本发明的微结构保角性转移方法利用简易的端点固定图形化设计,对微结构纳米薄膜进行固定,实现完全保角性转移,大大的降低了保角性转移エ艺的复杂度,降低了エ艺成本。 Conformal metastasis method of a microstructure according to the present invention utilizes a simple end fixed pattern design, microstructured thin films is fixed, fully conformal metastasis, greatly reduces the complexity of conformal transfers Ester arts, reduced Ester Arts and costs.

附图说明 BRIEF DESCRIPTION

[0021] 图1显示为本发明的微结构保角性转移方法中XOI衬底的结构示意图。 [0021] FIG. 1 shows a schematic view of the conformal structure of the microstructure transfer method of the present invention XOI substrate.

[0022] 图2显示为本发明的微结构保角性转移方法中涂覆预设图形光刻胶的示意图。 [0022] Figure 2 shows the microstructure of the conformal transfer coating method of the present invention, a predetermined photoresist pattern. FIG.

[0023] 图3显示为本发明的微结构保角性转移方法中对顶层X纳米薄膜进行刻蚀形成预设图形微结构的示意图。 [0023] Figure 3 shows the microstructure of the conformal transfer method of the present invention, the top layer film is etched nano-X schematic predetermined pattern forming a microstructure.

[0024] 图4显示为本发明的微结构保角性转移方法中将埋氧层进行腐蚀之后得到的结构的示意图。 [0024] FIG. 4 shows in the transfer method of the conformal structure of the present invention microstructure buried oxide layer schematic structure obtained after etching is performed.

[0025] 图5显示为本发明的微结构保角性转移方法中将基板与微结构相接触的示意图。 [0025] FIG. 5 shows a schematic view of the substrate holding in the transfer method of the present invention, the angle of the microstructure of the microstructure contact.

[0026] 图6显示为本发明的微结构保角性转移方法中将微结构转移到基板上的示意图。 [0026] Figure 6 shows the microstructure of the conformal transfer method in the microstructure of the present invention on a substrate is transferred to a schematic diagram.

[0027] 图7显示为本发明的微结构保角性转移方法中将微结构转移到基板上之后微结构两端区域有部分残留在未被完全腐蚀掉的埋氧层上的示意图。 Micro end regions schematic structure portion remaining on the not completely etched buried oxide layer after [0027] Figure 7 shows the microstructure of the conformal transfer method in the microstructure of the present invention transferred onto the substrate.

[0028] 元件标号说明 [0028] DESCRIPTION OF REFERENCE NUMERALS element

[0029] I 底层硅 [0029] I underlying silicon

[0030] 2 埋氧层 [0030] a buried oxide layer 2

[0031] 3 顶层X纳米薄膜 [0031] 3 top thin films X

[0032] 4 光刻胶 [0032] The photoresist 4

[0033] 5 微结构 [0033] Microstructure 5

[0034] 6 未被完全腐蚀掉的埋氧层 [0034] 6 is not completely etched buried oxide layer

[0035] 7 基板具体实施方式 [0035] DETAILED DESCRIPTION substrate 7

[0036] 以下通过特定的具体实例说明本发明的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。 [0036] Hereinafter, an embodiment of the present invention by certain specific examples, those skilled in the art disclosed in this specification may readily understand the content of other advantages and effects of the present invention. 本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。 The present invention may also be implemented or applied through other different specific embodiments, the details of the specification may be carried out in various modified or changed without departing from the spirit of the invention based on various concepts and applications.

[0037] 请參阅图1至图7。 [0037] Please refer to FIGS. 1 to 7. 需要说明的是,本实施例中所提供的图示仅以示意方式说明本发明的基本构想,遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可为ー种随意的改变,且其组件布局型态也可能更为复杂。 Incidentally, the present embodiment illustrates a schematic manner only examples provided to illustrate the basic idea of ​​the invention, then the drawings shows only related to the present invention, the number of components in the assembly when not in accordance with the actual embodiment, the shape and drawn to scale, of each component type, number and proportion can be arbitrarily changed to species ー its practical embodiment, and the layout of the components may also be more complex patterns.

[0038] 本发明提供一种微结构保角性转移方法,所述方法至少包括以下步骤: [0038] The present invention provides a method of micro-metastases conformal structure, comprising at least the steps of:

[0039] 步骤I),请參阅图1,如图所示,提供一XOI衬底,所述XOI衬底自下而上依次为底层硅1、埋氧层2及顶层X纳米薄膜3。 [0039] the I step), see FIG. 1, as shown in FIG, XOI providing a substrate, said substrate XOI bottom silicon layer 1 is from bottom to top, the buried oxide layer 2 and the top X 3 thin films.

[0040] 具体的,所述顶层X纳米薄膜中的X为硅、锗、II1-V族化合物等半导体材料。 Semiconductor material [0040] Specifically, the top layer of the nano thin film X X is silicon, germanium, II1-V Group compound. 对于顶层X纳米薄膜中的X为硅的情况,此时所述XOI衬底即为SOI衬底。 For the top layer of the nano where X is silicon thin film X, in which case the substrate is the SOI substrate XOI. 所述顶层X纳米薄膜3的厚度范围为10nnT200nm。 The top layer film thickness in the range 3 nanometers X is 10nnT200nm.

[0041] 步骤2),请參阅图2,如图所示,在所述顶层X纳米薄膜3上涂覆预设图形的光刻胶4作为掩膜,所述预设图形为哑铃状。 [0041] Step 2), see Figure 2, as shown in FIG 3 a predetermined pattern on the photoresist coating in the top layer of the nano X 4 film as a mask, the predetermined pattern is a dumbbell.

[0042] 此处需要说明的是,所述哑铃状是指图形两头尺寸大、中间尺寸小,但两头及中间的具体图形可根据需要改变。 [0042] It should be noted here that the dumbbell-shaped pattern refers to the size of two large and small intermediate size, but the sides and the intermediate specific pattern may be changed as desired.

[0043] 步骤3),请參阅图3,如图所示,利用干法刻蚀技术对所述顶层X纳米薄膜3进行刻蚀,以将所述顶层X纳米薄膜进行图案化,形成预设图形的微结构5。 [0043] Step 3), see Figure 3, as shown, using a dry etching technique X 3 thin films etching the top layer to the top layer of the thin film nano-patterning X, a pre-formed microstructure pattern 5 is provided. 由于所述光刻胶4的形状为哑铃状,因此刻蚀得到的微结构5也为哑铃状,所述微结构5包括两端区域及连接于所述两端区域之间的中间图形。 Due to the shape of the photoresist 4 is a dumbbell shape, the etching resulting microstructure is also 5 dumbbell, the microstructure comprises end regions 5 and is connected to the intermediate pattern between the end regions. 如上所述,所述哑铃状图形两端及中间的具体图形可根据需要改变,其中所述中间图形可为微米带或亚微米带等,本实施例中要转移的微结构以微米带为例进行说明,因此所述中间图形设计为微米带结构,即为矩形,在其它实施例中,也可根据需要转移的薄膜形状将所述中间图形设计为其它形状。 As described above, both ends of the dumbbell-like pattern and the intermediate specific pattern may be changed as necessary, wherein the intermediate pattern may be micron or submicron belt band, in the present embodiment the microstructure to be transferred with an example embodiment in micrometers It will be described, thus the intermediate structure with a graphic design microns, i.e. rectangular, in other embodiments, the shape of the thin film may need to be transferred to said intermediate pattern designed in other shapes. 另外,在本实施例中为了方便起见,所述微结构5的两端区域设计为方形,在其它实施例中也可设计为其它形状,只要满足两端区域与中间图形部分组合起来为哑铃状即可。 Further, in the present embodiment, for convenience, the microstructure of both end regions 5 square design, in other embodiments, other shapes may be designed, as long as both ends of the intermediate region and the pattern portion is combined dumbbell It can be. 具体到本实施例中,需满足所述微结构5的两端区域方形边长大于中间图形矩形的短边长。 Specific to this embodiment, the microstructure must satisfy both end regions 5 a square side length to the short side length of the intermediate rectangular pattern.

[0044] 具体的,所述刻蚀采用反应离子刻蚀法。 [0044] Specifically, the etching by reactive ion etching.

[0045] 步骤4),请參阅图4,如图所示,采用湿法腐蚀将所述埋氧层2进行腐蚀,直至所述微结构5的中间图形部分完全悬空,且所述微结构5的两端区域以下仍有部分未被完全腐蚀掉的埋氧层6。 [0045] Step 4), please refer to FIG. 4, as shown in FIG wet etching the buried oxide layer 2 is etched until the microstructure of the intermediate pattern part 5 is fully suspended, and the microstructure the end regions 5 or less are still not completely etched portion of buried oxide layer 6.

[0046] 具体的,所述湿法腐蚀采用氢氟酸或BOE溶液(氧化物蚀刻缓冲液)。 [0046] Specifically, the wet etching using hydrofluoric acid or BOE solution (buffer oxide etch). 本实施例中将以氢氟酸为例进行说明。 Hydrofluoric acid present embodiment will be described as an example.

[0047] 氢氟酸腐蚀的目的是为了让所述微结构5能够进行转移。 Objective [0047] The hydrofluoric acid etching is 5 to allow the microstructures can be transferred. 氢氟酸腐蚀之前,所述微结构5与所述埋氧层2之间牢固結合,因此需要破坏这种结合才能进行转移。 Hydrofluoric acid before etching, between the microstructure 5 and the buried oxide layer 2 firmly bonded, it is necessary to destroy this binding transferred. 本实施例中,所述埋氧层2的材料为ニ氧化硅,能够被氢氟酸溶解掉。 In this embodiment, the material of the buried oxide layer 2 is a silicon oxide ni, hydrofluoric acid can be dissolved away. 图形化的微结构5能够在纵向上阻挡氢氟酸腐蚀其对应顶部位置的埋氧层,但是没有微结构阻挡的区域就会被氢氟酸腐蚀,随着该区域埋氧层的腐蚀,氢氟酸从该区域向所述微结构以下埋氧层两侧开始腐蚀。 5 patterned microstructures can be blocked in the longitudinal direction thereof corresponds to the hydrofluoric acid etching of the buried oxide layer top position, but no microstructure barrier region will be hydrofluoric acid corrosion, corrosion in the region with the buried oxide layer, the hydrogen hydrofluoric acid, the buried oxide layer on both sides of the region to start etching from the microstructure less. 由于所述微结构5两端区域尺寸相较于中间图形尺寸较大,而氢氟酸腐蚀埋氧层时腐蚀速度是各向同性的,所以在氢氟酸侧向腐蚀所述微结构5以下的埋氧层时,较小尺寸的中间图形下面的埋氧层会优先腐蚀完毕,而较大尺寸两端区域下面依然会有部分未被完全腐蚀掉的埋氧层6存在,所述未被完全腐蚀掉的埋氧层6形成固定结来固定所述微结构5。 Since both ends of the microstructures as compared to the larger size of region 5 intermediate pattern size, while the hydrofluoric acid etching of the buried oxide layer is isotropic etching rate, so that the hydrofluoric acid etching in the lateral microstructures 5 or less when the buried oxide layer, the intermediate pattern smaller size below a buried oxide layer preferentially etching is completed, the next larger size end regions still have not completely etched portion of buried oxide layer 6 is present, not the completely etched buried oxide layer 6 is formed of a fixed tie to secure the microstructure 5. 这样在氢氟酸溶液中所述微结构5不会发生滑移,并且将腐蚀完毕之后的结构从氢氟酸溶液中取出时所述微结构5也不会因为溶液表面的张カ而发生移动。 The microstructure 5 is not a solution because Zhang ka surface movement occurs when the hydrofluoric acid solution so that slip does not occur microstructure 5, and the structure after etching is completed is removed from hydrofluoric acid solution . 对于阵列型的微结构,也能保证阵列中各単元之间的相对位置不发生改变。 For the array type microstructure, but also to ensure the relative position between the radiolabeling element array does not change.

[0048] 步骤5),请參阅图5、图6及图7,如图5所示,提供一基板7,将所述基板7与所述微结构5相接触。 [0048] Step 5), see FIGS. 5, 6 and 7, as shown in Figure 5, a substrate 7, the substrate 7 is in contact with the microstructure 5. 由于范德瓦耳斯力,所述微结构5会紧贴在所述基板7上,此时迅速提起所述基板7,所述微结构5将转移到所述基板7上。 Since van der Waals forces, the microstructure 5 will be in close contact on the substrate 7, then quickly lift the substrate 7, the microstructure 5 to 7 is transferred to the substrate. 由于固定结即部分未被完全腐蚀掉的埋氧层6的存在,所述微结构5的两端区域中间部分与部分未被完全腐蚀掉的埋氧层6牢固接触,所述基板7与所述微结构5之间的范德瓦耳斯力不足以将其转移到所述基板7上,所以所述微结构5将从所述未被完全腐蚀掉的埋氧层6处撕裂。 Since there is a fixed node that is not completely etched away portion of the buried oxide layer 6, the microstructure of the end areas 5 and the intermediate portion portion is not completely etched buried oxide layer 6 is in firm contact with the substrate 7 being van der Waals forces between the microstructure 5 is insufficient to said transferred onto the substrate 7, so that the microstructure 5 are not completely etched away from the buried oxide layer 6 at the tear. 请參阅图6,显示为微结构5转移到所述基板7上的示意图,所述微结构5两端区域中间部分未转移,形成空心结构。 Please refer to FIG. 6, 5 to transfer a schematic view of a micro structure on the substrate 7, the microstructure of the intermediate portion 5 without metastasis both end regions, form a hollow structure. 再请參阅图7,显示为将转移之后所述微结构5两端区域有部分残留在未被完全腐蚀掉的埋氧层6上的示意图。 Referring again to Figure 7, after the transfer of the microstructured region ends 5 a schematic view of the portion 6 remains in the not completely etched buried oxide layer. 在上述转移过程中,由于两端固定结(未被完全腐蚀掉的埋氧层6)的作用,所述微结构5能实现保角性转移。 In the transfer process, since the junction is fixed at both ends (not completely etched buried oxide layer 6) action, the microstructure can be realized 5 conformal metastasis.

[0049] 需要指出的是,两端固定结(未被完全腐蚀掉的埋氧层6)的实际形状不一定如图7中所示为方形,在腐蚀过程中,其棱角会变得圆滑。 [0049] It should be noted that both ends are fixed knot (not completely etched buried oxide layer 6) is not necessarily the actual shape of a square as shown in FIG. 7, in the etching process, the edges become rounded.

[0050] 具体的,所述基板7为柔性衬底,所述柔性衬底具有柔软、弾性或塑性的特点,所述柔性衬底7的材料可以为聚ニ甲基硅氧烷(PDMS)、聚甲基丙烯酸甲脂(PMMA)、聚酰亚胺(PI)、聚对苯ニ甲酸こニ酯(PET)或蚕丝蛋白,但并不限于以上几种。 [0050] Specifically, the substrate 7 is a flexible substrate, the flexible substrate having flexibility, Dan or plastic characteristics, the material of the flexible substrate 7 may ni methyl siloxane (PDMS) is poly, poly methyl methacrylate (PMMA), polyimide (PI), polyphenylene acid ko ni ni terephthalate (PET), or silk proteins, but is not limited to the above several.

[0051] 至此,成功将所述微结构5从刚性衬底(底层硅及埋氧层)上转移至柔性衬底,随后可以利用传统的低温エ艺技术条件再柔性衬底上的微结构上制作柔性电子器件。 [0051] Thus, the microstructure 5 successfully transferred from the rigid substrate (underlying silicon and the buried oxide layer) to the flexible substrate, may then utilize the microstructures on the conventional cryogenic process technology conditions Ester flexible substrate and then making flexible electronic devices. 本实施例中,即在所述微结构5的中间图形部分微米带上制作柔性电子器件。 In this embodiment, i.e. production of a flexible band pattern portion microns electronic device in the middle of the micro structure 5. 本发明的微结构保角性转移方法中,所述微结构的中间图形的宽度范围为Iu nTSOOym,此处所述中间图形的宽度指的是垂直于两端区域与中间图形连线方向上中间图形各处的尺寸,具体到本实施例中,所述中间图形的宽度指的是微米带的短边长。 Conformal transfer method of a microstructure of the present invention, the width of the intermediate pattern of microstructures Iu nTSOOym, intermediate described herein refers to a pattern width perpendicular to the intermediate region of opposite ends of the intermediate connection pattern throughout the pattern size, specific to the present embodiment, the intermediate pattern width refers to a length of a short side micron band.

[0052] 需要指出的是,本实施例中为了方便起见,所述微结构以ー个微米带为例进行说明本发明的微结构保角性转移方法,但对于微米带阵列或其它图形阵列,同样在本发明的微结构保角性转移方法的保护范围内。 [0052] It is noted that, in this embodiment, for convenience, the microstructure ー microns to be described with an example of the transfer method of the micro-conformal structure of the present invention, but microns with other graphics array or arrays, Also in the microstructure of the present invention within the scope of protection of the angle of transfer method.

[0053] 综上所述,本发明的微结构保角性转移方法将待转移的微结构设计为哑铃状,由于微结构两端区域尺寸相较于中间图形尺寸较大,而氢氟酸腐蚀埋氧层时腐蚀速度是各向同性的,所以在氢氟酸侧向腐蚀纳米薄膜底下的埋氧层时,较小尺寸的中间图形下面的埋氧层会优先腐蚀完毕,而较大尺寸的两端区域下面依然会有部分埋氧层存在,形成固定结来固定微结构,避免了腐蚀完毕后所引起的图形滑移以及从腐蚀液中取出时由于溶液的表面张カ所引起的排列次序混乱,从而实现保角性转移。 [0053] In summary microstructure, the conformal transfer method of a microstructure of the present invention is designed to be transferred dumbbell, since both end regions of the microstructure larger size compared to the size of the intermediate pattern, and hydrofluoric acid etching when the buried oxide layer is isotropic etching rate, so that the thin film side under the hydrofluoric acid etching of nano buried oxide layer, the intermediate pattern smaller size below a buried oxide layer preferentially etching is completed, the larger size of both end portions below the area will still be buried oxide layer is present, to form a fixed tie to secure the microstructure pattern to avoid slippage caused after etching is completed and the surface of the solution due to the arrangement order of the sheets is removed from the etching solution when ka caused confusion in order to achieve conformal metastasis. 本发明的微结构保角性转移方法利用简易的端点固定图形化设计,对微结构纳米薄膜进行固定,实现完全保角性转移,大大的降低了保角性转移エ艺的复杂度,降低了エ艺成本。 Conformal metastasis method of a microstructure according to the present invention utilizes a simple end fixed pattern design, microstructured thin films is fixed, fully conformal metastasis, greatly reduces the complexity of conformal transfers Ester arts, reduced Ester Arts and costs. 所以,本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。 Therefore, the present invention effectively overcomes the drawbacks of the prior art and with a high degree of value industry.

[0054] 上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。 [0054] The above-described embodiments are only illustrative of the principles and effect of the present invention, the present invention is not intended to be limiting. 任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。 Any person skilled in this art can be made at without departing from the spirit and scope of the present invention, the above-described embodiments can be modified or changed. 因此,举凡所属技术领域中具有通常知识者在未脱离本发明所掲示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。 Thus, one skilled in the art that whenever all having ordinary knowledge in the present invention kei illustrated without departing from the spirit of the technical idea and completed the equivalent modified or altered, yet the claims shall be encompassed by the present invention.

Claims (9)

1. 一种微结构保角性转移方法,其特征在于,至少包括以下步骤: 1)提供XOI衬底,所述XOI衬底自下而上依次为底层硅、埋氧层及顶层X纳米薄膜; 2)在所述顶层X纳米薄膜上涂覆预设图形的光刻胶,所述预设图形为哑铃状; 3)对所述顶层X纳米薄膜进行刻蚀以将所述顶层X纳米薄膜进行图案化,形成预设图形的微结构;所述微结构包括两端区域及连接于所述两端区域之间的中间图形; 4)采用湿法腐蚀将所述埋氧层进行腐蚀,直至所述中间图形完全悬空,且所述两端区域以下仍有部分未被完全腐蚀掉的埋氧层; 5)提供一基板,将所述基板与所述微结构相接触,并迅速提起以将所述微结构自所述未被腐蚀掉的埋氧层处撕裂并转移到所述基板上,所述微结构两端区域与所述未被完全腐蚀掉的埋氧层相接触的部分留在所述未被完全腐蚀掉的埋氧层上。 1. A micro conformal structure of transfer method, characterized by comprising at least the following steps: 1) providing a substrate XOI, XOI the underlying silicon substrate is from bottom to top, the buried oxide layer and the top thin films X ; 2) on the top X-coated thin films of a predetermined resist pattern, the predetermined pattern is a dumbbell; 3) of the top layer film is etched nano-X to the top layer thin films X It is patterned to form a predetermined pattern of microstructures; the microstructure comprises end regions and the intermediate pattern between the two ends connected to the region; 4) wet etch the buried oxide layer is etched until the intermediate pattern is fully suspended, and the both ends are still some areas not fully etched buried oxide layer; 5) providing a substrate, the substrate is in contact with the microstructure, and to quickly lift the microstructure of the non-etched from the buried oxide layer at the tear and transferred onto the substrate, in contact with the part is not completely etched buried oxide layer of the micro-domain structure left ends in the not completely etched buried oxide layer.
2.根据权利要求1所述的微结构保角性转移方法,其特征在于:所述刻蚀采用反应离子刻蚀。 The micro-conformal method of metastasis structure according to claim 1, wherein: said etching by reactive ion etching.
3.根据权利要求1所述的微结构保角性转移方法,其特征在于:所述顶层X纳米薄膜的X为硅、锗或II1-V族化合物。 The micro-conformal method of metastasis structure according to claim 1, wherein: said top NANOFILM X X is silicon, germanium or II1-V compound.
4.根据权利要求1所述的微结构保角性转移方法,其特征在于:所述顶层X纳米薄膜的厚度范围为10nnT200nm。 The micro-conformal method of metastasis structure according to claim 1, wherein: said top layer thickness in a range of X NANOFILM 10nnT200nm.
5.根据权利要求1所述的微结构保角性转移方法,其特征在于:所述基板为柔性衬底。 The micro-conformal method of metastasis structure according to claim 1, wherein: said substrate is a flexible substrate.
6.根据权利要求5所述的微结构保角性转移方法,其特征在于:所述柔性衬底的材料为聚二甲基硅氧烷、聚甲基丙烯酸甲酯、聚酰亚胺、聚对苯二甲酸乙二酯或蚕丝蛋白。 The transfer method of micro-conformal structure according to claim 5, wherein: the flexible substrate material is a polydimethylsiloxane, polymethyl methacrylate, polyimide, polyethylene terephthalate or terephthalic acid fibroin.
7.根据权利要求1所述的微结构保角性转移方法,其特征在于:所述中间图形为微米带或亚微米带。 The micro-conformal method of metastasis structure according to claim 1, wherein: said intermediate band pattern of micron or sub-micron band.
8.根据权利要求1所述的微结构保角性转移方法,其特征在于:所述中间图形的宽度范围为I μ πΓ500 μ m。 8. The method of micro-metastasis of the conformal structure according to claim 1, wherein: the width of said intermediate pattern is I μ πΓ500 μ m.
9.根据权利要求1所述的微结构保角性转移方法,其特征在于:所述湿法腐蚀采用氢氟酸或BOE溶液。 9. The method of micro-metastasis of the conformal structure according to claim 1, wherein: the wet etching using hydrofluoric acid or BOE solution.
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