CN103014664A - Chemical vapor deposition apparatus - Google Patents

Chemical vapor deposition apparatus Download PDF

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CN103014664A
CN103014664A CN2011102870316A CN201110287031A CN103014664A CN 103014664 A CN103014664 A CN 103014664A CN 2011102870316 A CN2011102870316 A CN 2011102870316A CN 201110287031 A CN201110287031 A CN 201110287031A CN 103014664 A CN103014664 A CN 103014664A
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vapor deposition
chemical vapor
gas
deposition apparatus
means
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CN2011102870316A
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CN103014664B (en
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奚明
马悦
萨尔瓦多
林芳
黄占超
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理想能源设备(上海)有限公司
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Abstract

The invention relates to a chemical vapor deposition apparatus comprising a reaction chamber, a cooling device, a spray assembly located at top of the reaction chamber and a base arranged opposite to the spray assembly, wherein the base comprises a heating unit, and the spray assembly comprises a first air inlet apparatus and a second air inlet apparatus which are respectively used for transmitting a first gas and a second gas to a reaction zone between the base and the spray assembly. The apparatus further comprises a distance piece arranged between the first air inlet apparatus and the second air inlet apparatus. The cooling device, the first air inlet apparatus, the distance piece and the second air inlet apparatus are sequentially arranged in stack. A thermal conductivity of the distance piece is less than that of the first air inlet apparatus. During a heating process by the heating unit, the first air inlet apparatus and the second air inlet apparatus have different temperatures. The apparatus can provide different temperatures for gases in different air inlet apparatuses.

Description

化学气相沉积装置技术领域[0001] 本发明涉及化学气相沉积技术领域,特别涉及一种化学气相沉积装置。 TECHNICAL FIELD The chemical vapor deposition [0001] The present invention relates to chemical vapor deposition techniques, and more particularly relates to a chemical vapor deposition apparatus. 背景技术[0002] 化学气相沉积(Chemical vapor deposition,简称CVD)是反应物质在气态条件下发生化学反应,生成固态物质沉积在加热的固态基体表面,进而制得固体材料的工艺技术, 其通过化学气相沉积装置得以实现。 [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is the reaction mass undergo a chemical reaction in a gaseous condition, form a solid substance is deposited in the solid substrate surface is heated, thereby to obtain technology solid material, by chemical vapor deposition apparatus can be achieved. 具体地,CVD装置通过进气装置将反应气体通入反应室中,并控制反应室的压强、温度等反应条件,使得反应气体发生反应,从而完成沉积工艺步骤。 In particular, the CVD apparatus by the reaction gas inlet means into the reaction chamber, the reaction chamber and controlling the pressure, temperature and other reaction conditions, the reaction occurs so that the reaction gas, the deposition process steps to complete. 为了沉积所需薄膜,一般需要向反应室中通入多种不同的反应气体,且还需要向反应室中通入载气或吹扫气体等其他非反应气体,因此在CVD装置中需要设置多个进气装置。 To deposit the desired films, generally requires a plurality of different pass into the reaction gas into the reaction chamber, and also requires the reaction chamber into other non-reactive carrier gas or purge gas, and therefore needs to be set in the multiple CVD apparatus an intake device. 以下以金属有机化学气相沉积(Metal Organic Chemical Vapor Deposition,M0CVD)装置为例,介绍现有技术中包括多个进气装置的CVD装置。 In the MOCVD (Metal Organic Chemical Vapor Deposition, M0CVD) means an example, prior art CVD apparatus comprises a plurality of air intake devices. [0003] MOCVD主要用于氮化镓、砷化镓、磷化铟、氧化锌等II1-V族,I1-VI族化合物及合金的薄层单晶功能结构材料的制备,随着上述功能结构材料的应用范围不断扩大,MOCVD装置已经成为化学气相沉积装置的重要装置之一。 [0003] MOCVD is mainly used for the preparation of gallium nitride, gallium arsenide, indium phosphide, zinc oxide, II1-V group, the functional configuration of a thin layer of monocrystalline material I1-VI compounds and alloys, as the above-described functional configuration expanding the scope of application of the material, MOCVD apparatus has become an important means of chemical vapor deposition apparatus. MOCVD —般以II族或III族金属有机源和VI族或V族氢化物源等作为反应气体,用氢气或氮气作为载气,以热分解反应方式在基板上进行气相外延生长,从而生长各种I1-VI化合物半导体、πι-v族化合物半导体以及它们的多元固溶体的薄层单晶材料。 MOCVD - as in Group II or Group III metal organic source and Group VI or Group V hydride source as a reaction gas, with hydrogen or nitrogen as a carrier gas to a thermal decomposition reaction manner vapor phase epitaxial growth on the substrate, so that the growth of each a thin layer of monocrystalline material types I1-VI compound semiconductors, πι-v compound semiconductor polyol and a solid solution thereof. 由于II族或III族金属有机源和VI族或V族氢化物源的传输条件不同,因此需要通过不同的进气装置分别将II族或III族金属有机源和VI族或V族氢化物源传输至基板上方。 Due to the different transmission conditions Group II or Group III metal organic source and Group VI or Group V hydride source, thus requiring different inlet means respectively Group II or Group III metal organic source and Group VI or Group V hydride source transferred to the top of the substrate. [0004] 现有技术中的MOCVD装置一般包括: [0005] 反应腔;[0006] 位于所述反应腔顶部的喷淋组件,所述喷淋组件包括两个进气装置,所述两个进气装置分别将II族或III族金属有机源和VI族或V族氢化物源传输至基板上方;[0007] 与所述喷淋组件相对设置的基座,所述基座具有加热单元,所述基座用于支撑和加热基板。 [0004] The prior art MOCVD apparatus generally comprises: [0005] The reaction chamber; [0006] The reaction is in the top of the chamber showerhead assembly, the spray assembly comprises two air intake means, said two inlet gas means respectively II or group III and group VI metal-organic source or the group V hydride source to above the substrate; [0007] with the base of the shower assembly disposed opposite said base having a heating means, the and heating said susceptor for supporting a substrate. [0008] 所述喷淋组件根据反应气体的气流与相对基板的流动方向不同,分为垂直式和水平式。 [0008] The showerhead assembly according to the reaction gas stream to the flow direction opposite to the substrate, divided into horizontal and vertical. 水平式喷淋组件是指所述喷淋组件使得反应气体的气流沿平行于基板的水平方向流动;垂直式喷淋组件是指反应气体的气流沿垂直基板的竖直方向流动。 Horizontal spray assembly means that the spray assembly so that the reaction gas stream flowing in a direction parallel to the horizontal direction of the substrate; refers to a vertical component spray stream of the reaction gas flow in the vertical direction perpendicular to the substrate. 与水平式喷淋组件相比,垂直式喷淋组件能产生二维轴对称流动,抑制热对流涡旋,分别在基板上方形成较均匀的速度、温度和浓度边界层,从而获得更好的薄膜沉积。 Compared with the showerhead assembly horizontal, vertical spray assembly produces a two-dimensional axisymmetric flow to suppress thermal convection vortex are formed more uniform velocity, temperature and concentration of the boundary layer over the substrate, resulting in better film deposition. [0009] 参见中国专利公开号为:CN101122012A,该专利申请提供了一种喷淋组件,其可实现III族金属有机物和V族氢化物气体分别从喷淋组件整体结构两侧独立送气,并在反应腔的衬底上方均匀喷射,其实现的方法为:包括两组梳状喷淋头,第一组梳状喷淋头由装有进气接头I的气体A总管2和多根平行排列的气体A通气支管3组成,所述气体A通气支管3的一端同所述气体A总管2连通而另一端为封闭端,第二组梳状喷淋头由装有进气接头4的气体B总管5和多根平行排列的气体B通气支管6组成,所述各气体B通气支管6 的一端同所述气体B总管5连通而另一端为封闭端,具体如图1所示。 [0009] Referring to Chinese Patent Publication No.: CN101122012A, this patent application provides a spray assembly which can achieve a group III metal organic gas and group V hydride are from both sides of the overall configuration of showerhead assembly independent aspirated, and above the substrate uniform injection of the reaction chamber, which method is implemented: a comb comprising two shower head, the shower head the first group by a comb with a gas feed adapter 2 arranged in parallel and a plurality of I a gas manifold a gas vent manifold 3 at one end thereof a gas vent a branch pipe 3 communicates with the gas manifold 2 a and the other end is a closed end, a second set of comb B 4 showerhead gas manifold with the inlet connector 5 B and a plurality of gas manifolds arranged in parallel vent 6 at one end thereof to the respective gas vent manifold 6 B with the gas manifold 5 communicates B and the other end is a closed end, particularly as shown in FIG. [0010] 参见美国专利公开号为:US2009/0098276A1,其提供了目前MOCVD装置最通用的喷淋头形式,III族金属有机源和V族氢化物源气体分别从两个进气口进入喷淋头装置的第一进气总通道和第二进气总通道,并通过第一支路通道和第二支路通道,最终进入混合通道,出气后向基板喷射。 [0010] See, U.S. Patent Publication No.: US2009 / 0098276A1, which provides a MOCVD apparatus currently the most common form of the shower head, and a group III metal organic source of the group V hydride source gas respectively to the two spray from the intake port total first intake passage means and the second head of the total intake passage, and through the first branch passage and a second branch passage and eventually into the mixing passage, the air is injected into the substrate. III族金属有机源气体和V族氢化物源气体分别在加热的基板上发生热分解反应,并外延生长成II1-V族化合物半导体。 Group III metal organic source gas and a group V hydride source gas are thermally decomposed reaction occurs on the heated substrate, and epitaxially grown II1-V compound semiconductor. [0011] 现有技术中,CVD装置中喷淋组件中每个进气装置与基座的距离均相等,且每个进气装置一般采用相同的材料,即每个进气装置的热传导系数相同,因此同一反应腔中的每个进气装置的温度相同,最终使得所有反应气体的温度相同。 [0011] In the prior art, the CVD apparatus showerhead assembly from each of the intake means and the base are equal, and each intake device is generally the same material, i.e. the same as each intake apparatus thermal conductivity , the same the same reaction chamber means each intake temperature, so that the final temperature of all the same as the reaction gas. 但是不同反应气体的分解温度可能不同,如III族金属有机源的分解温度远远低于V族氢化物源的分解温度。 However, the decomposition temperature of the various reaction gases may be different, such as a group III metal organic decomposition temperature of the source is far below the decomposition temperature of the Group V hydride source. [0012] 当MOCVD装置将III族金属有机源和V族氢化物源气体同时加热到较高温度时, III族金属有机源便会先发生分解反应,并与V族氢化物源气体发生反应,从而会产生大量的固体颗粒。 [0012] When MOCVD apparatus Group III metal source and Group V organic hydride source gas while heating to a higher temperature, source of the group III metal organic decomposition reaction will occur first, and reacted with a Group V hydride source gas, which will produce large quantities of solid particles. 一方面这些固体颗粒会沉积在喷淋组件的表面,最终可能会落在正在沉积的薄膜上;因此,为防止沉积在喷淋组件的表面的颗粒落在正在沉积的薄膜上,需要经常对喷淋组件进行清洗,从而增加清洗的成本;另一方面,这些固体颗粒的生成消耗了部分反应气体,从而造成材料的浪费,而金属有机(Metal Organic,MO)源材料的价格是很昂贵的,这必然就造成了生产成本的提高。 In one aspect the solid particles will be deposited on the surface of the showerhead assembly may eventually fall on the film being deposited; Therefore, to prevent deposition of a thin film being deposited falls on the surface of the particles of the spray assembly, it requires frequent spray shower cleaning assembly, thereby increasing the cost of cleaning; on the other hand, consumption of solid particles generating a part of the reaction gas, resulting in a waste of materials, and organic metal (metal organic, MO) source material price is very expensive, this will inevitably result in the increase in production costs. 同时,由于颗粒污染,也降低了薄膜的沉积质量。 Meanwhile, due to particle contamination, also reduces the quality of the deposited films. [0013] 当MOCVD装置将III族金属有机源和V族氢化物源气体同时加热到较低温度时,V 族氢化物源气体就不易发生分解反应,最终就很难形成II1-V族致密薄膜。 [0013] When MOCVD apparatus Group III metal source and Group V organic hydride source gas while heating to a lower temperature, a Group V hydride source gas decomposition reaction is not easy, it is ultimately difficult to form a dense film II1-V Group . 即使沉积得到薄膜,这些薄膜也会有很多气孔,且很容易脱落。 Even if film deposition obtained, these films will have a lot of pores, and it is easy to fall off. [0014] 综上所述,现有技术中MOCVD装置将III族金属有机源和V族氢化物源气体加热到同一温度,最终反应沉积的薄膜的质量很差,且薄膜沉积速率低、生产成本高。 [0014] In summary, the prior art MOCVD apparatus Group III metal source and Group V organic hydride source gas is heated to the same temperature, the reaction is poor quality of the final deposited film, deposition rate and low production costs high. 在除MOCVD 装置之外的其他CVD装置中,也存在不同反应气体所需的加热温度不同的情况,当将这些不同反应气体加热到同一温度,同样地,最终反应沉积的薄膜质量很差,且薄膜沉积速率低、生产成本高。 In other CVD apparatus other than the MOCVD apparatus, there are different heating temperature required for the reaction gases of different circumstances, the different reaction gases when heated to the same temperature in the same manner, the film quality of the final deposition of the reaction is poor, and low deposition rate and high production cost. 类似地,在其他的CVD装置中,也存在不同反应其他需要不同温度的情况。 Similarly, in another CVD apparatus, there are other different cases require different reaction temperatures. [0015] 因此,如何使CVD装置为不同的反应气体提供不同的温度就成为亟待解决的技术问题。 [0015] Therefore, how to provide a CVD apparatus different temperatures for different reaction gases has become a technical problem to be solved. 发明内容[0016] 本发明的目的是提供一种化学气相沉积装置,以为不同进气装置中的气体提供不同的温度。 SUMMARY OF THE INVENTION [0016] The object of the present invention is to provide a chemical vapor deposition apparatus, for different intake means to provide different gas temperatures. [0017] 为解决上述问题,本发明提供了一种化学气相沉积装置,包括:反应腔、冷却装置、 位于所述反应腔顶部的喷淋组件以及与所述喷淋组件相对设置的基座,所述基座具有加热单元,所述喷淋组件包括第一进气装置以及第二进气装置,用于分别将第一气体以及第二气体传输至基座与喷淋组件之间的反应区;设置在所述第一进气装置和所述第二进气装置之间的间隔件,所述冷却装置、所述第一进气装置、所述间隔件和所述第二进气装置依次层叠设置,所述间隔件的热传导系数小于所述第一进气装置的热传导系数,在所述加热单元加热过程中,所述第一进气装置与所述第二进气装置具有不同的温度。 [0017] In order to solve the above problems, the present invention provides a chemical vapor deposition apparatus, comprising: a reaction chamber, cooling means, positioned showerhead assembly and the reaction chamber base and the top of the shower assembly disposed opposite, the base having a heating unit, the showerhead assembly comprises a first inlet means and second inlet means, respectively, for the reaction zone between the first gas and the second gas flow to the base of the shower assembly ; spacer member disposed between said first inlet means and said second inlet means, said cooling means, said first air intake means, said spacer member and said second inlet means sequentially stacked, the heat transfer coefficient of the spacer is smaller than the first inlet means of the thermal conductivity, the heating unit heating process, the first intake means and the second intake means having different temperatures . [0018] 优选地,所述第一进气装置的热传导系数等于所述第二进气装置的热传导系数。 [0018] Preferably, the first intake means coefficient of thermal conductivity is equal to the second intake means thermal conductivity. [0019] 优选地,所述第一进气装置和与所述第二进气装置的材料为包括石墨或碳化硅的材料,所述间隔件的材料成分包括钢、铝、铜、金、银中的一种或多种。 [0019] Preferably, the first inlet means and second inlet means and said material is a material comprising graphite or silicon carbide, the material composition of the spacer comprises a steel, aluminum, copper, gold, silver of one or more. [0020] 优选地,所述第一进气装置的热传导系数大于所述第二进气装置的热传导系数。 [0020] Preferably, the first intake means is greater than the thermal conductivity of the second inlet means of the thermal conductivity. [0021] 优选地,所述间隔件的热传导系数大于或等于所述第二进气装置的热传导系数。 [0021] Preferably, the thermal conductivity of the spacer is greater than or equal to the second intake means thermal conductivity. [0022] 优选地,所述第一进气装置的材料包括石墨或碳化硅,所述第二进气装置的材料成分包括钢、铝、铜、金、银中的一种或多种。 [0022] Preferably, the first intake means comprises a graphite material or silicon carbide, the second intake means comprise one or more components of the material steel, aluminum, copper, gold, and silver. [0023] 优选地,所述第一进气装置的热辐射系数小于所述第二进气装置的热辐射系数。 [0023] Preferably, the first intake means heat radiation coefficient less than the second intake means heat radiation coefficient. [0024] 优选地,所述第一气体包括反应前体、载气、吹扫气体中的一种或多种。 [0024] Preferably, the first gas comprises a reactive precursor, the carrier gas, one or more purge gases. [0025] 优选地,所述第二气体包括反应前体、载气、吹扫气体中的一种或多种。 [0025] Preferably, the second reaction gas comprises a precursor, the carrier gas, one or more purge gases. [0026] 优选地,所述第一进气装置用于传输III族金属有机源,所述第二进气装置用于传输V族氢化物源。 [0026] Preferably, the first intake means for transmitting a Group III metal organic source of the second intake means for transmitting a Group V hydride source. [0027]优选地,所述 III 族金属有机源包括Ga(CH3)3、In(CH3)3、Al (CH3)3、Ga(C2H5)3、 Zn (C2H5) 3气体中的一种或多种。 [0027] Preferably, the group III organic metal source comprises one or Ga (CH3) 3, In (CH3) 3, Al (CH3) 3, Ga (C2H5) 3, Zn (C2H5) 3 gas species. [0028] 优选地,所述V族氢化物源包括NH 3、PH3> AsH3气体中的一种或多种。 [0028] Preferably, the group-V hydride source comprises NH 3, PH3> AsH3 gas is one or more. [0029] 优选地,所述加热单元在加热过程中,所述第一进气装置的温度低于所述第二进气装置的温度。 [0029] Preferably, the heating unit heating process, the first intake device temperature is lower than the second intake apparatus. [0030] 优选地,所述第一进气装置与所述第二进气装置之间的温度差大于或等于100°C 且小于或等于600°C。 [0030] Preferably, the inlet temperature between the first device and the second air intake means is greater than or equal to 100 ° C and less than or equal to 600 ° C. [0031] 优选地,所述第一进气装置的温度大于或等于35°C且小于或等于600°C,所述第二进气装置的温度大于或等于135°C且小于或等于800°C。 [0031] Preferably, the first intake temperature means 35 ° C greater than or equal to and less than or equal to 600 ° C, the second intake means is equal to or greater than the temperature of 135 ° C and less than or equal to 800 ° C. [0032] 优选地,所述化学气相沉积装置还包括:旋转驱动单元,所述旋转驱动单元用于驱动所述基座或喷淋组件在所述化学气相沉积装置的沉积过程中旋转。 [0032] Preferably, the chemical vapor deposition apparatus further comprising: a rotation driving unit, the driving unit for driving the rotating base or showerhead assembly rotated during the deposition of the chemical vapor deposition apparatus. [0033] 优选地,所述第二进气装置包括若干气体分配管道,每一所述气体分配管道具有若干第二气孔,所述间隔件和所述气体分配管道至少部分均镶嵌于所述第一进气装置之中,所述气体分配管道向所述反应区露出所述第二气孔以使得第二气体从所述第二气孔排出。 [0033] Preferably, the second intake conduit means comprises a plurality of gas distribution, each of said plurality of gas distribution duct having a second hole, the spacer and the gas distribution duct are at least partially embedded in the first an air intake means in the gas distribution conduit of the second hole exposed to said second reaction zone such that the gas discharged from the second hole. [0034] 优选地,所述第一进气装置为一体成型的板体。 [0034] Preferably, the first intake means is integrally formed plate. [0035] 优选地,所述冷却装置具有冷却通道,用以通入冷却气体或者冷却液体。 [0035] Preferably, the cooling device having a cooling passage for cooling or cooling gas into a liquid. [0036] 优选地,所述第一进气装置为扩散盘,所述扩散盘具有上表面以及与所述上表面相对的下表面,所述上表面紧贴所述冷却装置,所述上表面设置有第一进气口以及气体扩散槽,所述下表面设置有若干第一气孔;所述第一气体依次经由所述第一进气口、气体扩散槽和所述第一气孔进入所述反应区。 [0036] Preferably, the first intake device is a diffuser plate, said diffuser plate having an upper surface and a lower surface and the upper surface opposite to the surface, the upper surface against the cooling device, the upper is provided with a first intake port and a gas diffusion groove, the lower surface is provided with a first plurality of pores; turn into the first gas through the first gas inlet, said gas diffusion grooves and said first hole the reaction zone. [0037] 优选地,所述气体扩散槽具有至少一个第一扩散槽与多个第二扩散槽,所述第一扩散槽沿着所述扩散盘的周沿环形设置,所述第二扩散槽沿着所述扩散盘的半径方向设置,所述第二扩散槽连接所述第一扩散槽,第二气体通过所述第一扩散槽流入所述第二扩散槽,所述第一气孔连接所述第二扩散槽。 [0037] Preferably, the at least one gas diffusion groove having a first groove and a plurality of second diffusion diffusion grooves, said first groove is provided along an annular diffusion along a circumference of the diffusion plate, the second diffusion groove provided along the radial direction of the diffusion plate, the second diffusion channel connecting the first diffusion tank, a second gas diffusion through the first slot into the second diffusion channel, the first connection hole said second diffusion channel. [0038] 优选地,所述第一进气口设置为两个,分别设置在所述扩散盘的相对两侧。 [0038] Preferably, the first intake port is set to two, are disposed on opposite sides of the diffusion plate. [0039] 优选地,任一所述第一进气口设置在所述第一扩散槽上,且位于相邻两所述第二扩散槽之间。 [0039] Preferably, any of the first air inlet disposed on said first diffusion groove and located between said two adjacent second diffusion channel. [0040] 优选地,所述第二进气装置包括导气盘以及若干气体分配管;所述喷淋组件还包括第二进气通道,所述第二进气通道贯穿所述扩散盘的中心且与所述导气盘连接;所述气体分配管上设置有若干第二气孔,所述气体分配管的一端与所述导气盘连通;所述第二气体依次经由所述第二进气通道、导气盘、气体分配管以及所述第二气孔进入所述反应区。 [0040] Preferably, the second intake air guide means comprises a disc and a plurality of gas distribution pipes; the showerhead assembly further comprises a second intake passage, the second intake passage extends through the center of the diffuser plate and connected to the air guide plate; a plurality of second hole is provided, an end of the gas distribution tube is in communication with the air guide plate on the gas distribution tube; the second gas sequentially through the second intake channel, the air guide plate, the gas distribution tube and a second hole into the reaction zone. [0041] 优选地,所述各气体分配管等长,并围绕所述导气盘呈放射状均匀排布。 [0041] Preferably, the length of each of the gas distribution tube, and uniformly arranged radially around the air guide plate. [0042] 优选地,所述气体分配管的长度等于所述扩散盘半径与所述导气盘半径之差。 [0042] Preferably, the length of the gas distribution tube is equal to the difference between the diffusion disc and the radius of the air guide disc radius. [0043] 优选地,所述化学气相沉积装置为金属有机化合物化学气相沉积(MOCVD)装置、 低压化学气相沉积(Low Pressure Chemical Vapor Deposition, LPCVD)装置、等离子体化学气相沉积(Plasma Chemistry Vapor Deposition, PCVD)装置或原子层沉积(Atomic Layer Deposition, ALD)装置。 [0043] Preferably, the chemical vapor deposition apparatus is a metal organic chemical vapor deposition (MOCVD) apparatus, LPCVD (Low Pressure Chemical Vapor Deposition, LPCVD) apparatus, a plasma chemical vapor deposition (Plasma Chemistry Vapor Deposition, PCVD) apparatus or atomic layer deposition (atomic layer deposition, ALD) apparatus. [0044] 优选地,所述间隔件的厚度大于或等于0.1mm且小于或等于2mm。 [0044] Preferably, the thickness of the spacer is greater than or equal to 0.1mm and less than or equal to 2mm. [0045] 与现有技术相比,本发明具有以下优点:[0046] I)本发明实施方式包括设置在第一进气装置和第二进气装置之间的间隔件,冷却装置、第一进气装置、所述间隔件和所述第二进气装置依次层叠设置,所述间隔件的热传导系数小于所述第一进气装置的热传导系数,由于所述第二进气装置需要通过所述间隔件与所述冷却装置进行热交换,所述冷却装置对所述第一进气装置和第二进气装置的冷却速度与冷却效果不同,从而使得所述加热单元在加热过程中,所述第一进气装置与所述第二进气装置具有不同的温度,进而可以避免了从所述第一进气装置进入所述反应区的分解温度低的气体在高温下先发生预分解后又与从第二进气装置进入反应区的分解温度高的气体反应并产生大量固体颗粒,降低了沉积在喷淋组件上的固体颗粒脱离到薄膜上的可能性, 也避 [0045] Compared with the prior art, the present invention has the following advantages: [0046] I) of the present embodiment of the invention comprises a spacer member embodiment, the cooling device is disposed between the first inlet means and second inlet means, first air intake means, said spacer means and said second inlet are sequentially stacked, the thermal conductivity of the spacer means is smaller than the first intake thermal conductivity, since the second intake means required by the said spacer member and said cooling heat exchange means, said cooling means cooling rate different from the cooling effects of the intake apparatus of the first and second intake means, so that the heating means in the heating process, the after said first inlet means and the second intake means having different temperatures, and thus can be avoided in a low reaction zone into said intake means from said first decomposition temperature of the gas is first pre-decompose at high temperatures occurs entering and departing from the high decomposition temperature of the reaction zone from the second reaction gas inlet means and generating a large amount of solid particles, reducing the deposition of solid particles on the showerhead assembly to the possibility of the film, but also to avoid 了分解温度高的气体在低温下无法进行分解,提高了薄膜沉积的速率,提高了薄膜的质量,节省了原材料,降低清洗以及生产成本。 High decomposition temperature of the gas can not be decomposed at a low temperature, increases the rate of film deposition, improve the quality of the film, to save raw materials, cleaning and reducing production costs. [0047] 2)所述第一进气装置用于传输III族金属有机源,所述第二进气装置用于传输V 族氢化物源,由于MOCVD生长工艺要求极高,通常需要极高的温度控制,且需要精确控制反应气体的配比,而III族金属有机源的分解温度与V族氢化物源的分解温度有较大差异,因此当分别控制III族金属有机源和V族氢化物源的温度时,便可减少副反应的发生,提高II1-V族化合物膜层的质量和沉积速率,防止III族金属有机源和V族氢化物源的浪费。 [0047] 2) the first intake means for transmitting a Group III metal organic source of the second intake means for transmitting a Group V hydride source, since the MOCVD growth process requires extremely high, typically require extremely high temperature control, and precise control of the ratio of the reaction gas, and the decomposition temperature of the group III metal organic decomposition temperature of the source of a group V hydride source are quite different, respectively, so that when the control group III metal source and group V organic hydrides when the temperature of the source, can reduce the incidence of side effects, improve the quality and deposition rate II1-V group compound film layer, to prevent waste and a group III metal organic source of the group V hydride source. [0048] 3)所述第一进气装置的温度大于或等于35°C且小于或等于600°C,所述第二进气装置的温度大于或等于135°C且小于或等于800°C,这是因为,所述III族金属有机源的分解温度远低于V族氢化物源的分解温度,本发明使得III族金属有机源和V族氢化物源的温度分别处于各自最佳的分解温度范围内,从而可以以较快的反应速率得到较高质量的II1-V族致密薄膜。 [0048] 3) the first intake temperature means 35 ° C greater than or equal to and less than or equal to 600 ° C, the second intake means is equal to or greater than the temperature of 135 ° C and less than or equal to 800 ° C this is because the decomposition temperature of the group III metal organic source is far below the decomposition temperature of the group V hydride source, such that the present invention is a group III metal organic source and group V hydride source temperature, respectively, at their respective optimal decomposition the temperature range, so that a faster reaction rates may be obtained II1-V group dense films of higher quality. [0049] 4)所述化学气相沉积装置还包括:旋转驱动单元,所述旋转驱动单元驱动所述基座或喷淋组件在所述化学气相沉积装置的沉积过程中进行旋转,最终使得薄膜沉积更均匀。 [0049] 4) The chemical vapor deposition apparatus further comprising: a rotation driving means, the rotary driving unit drives the base or the spray assembly is rotated during the deposition of the chemical vapor deposition apparatus, the thin film deposition such that the final more uniform. [0050] 5)所述第二进气装置包括具有若干第二气孔的若干气体分配管道,所述气体分配管道部分镶嵌于所述第一进气装置之中,所述第二气孔设置于所述气体分配管道上,所述气体分配管道向所述反应区露出所述第二气孔以使得第二气体能至所述第二气孔排出,从而使得所述喷淋组件更加紧凑,有利于减少所述化学气相沉积装置的体积。 [0050] 5) the second intake means comprises a plurality of gas distribution duct having a second plurality of pores, the gas distribution conduit embedded in part within the first intake means, said second hole is provided to the the said gas distribution pipe, the gas distribution conduit is exposed to the reaction zone of the second hole so that the second gas can be discharged to the second hole, so that the showerhead assembly more compact, helps to reduce the the volume of said chemical vapor deposition apparatus. [0051] 6)所述第一进气装置为扩散盘,所述扩散盘具有上表面以及与所述上表面相对的下表面,所述上表面设置有第一进气口以及气体扩散槽,所述下表面设置有若干第一气孔; 所述第一气体依次经由所述第一进气口、气体扩散槽和所述第一气孔进入所述反应区,第一气体可以先在气体扩散槽中进行均匀扩散后,再从第一气孔均匀地进入反应区,从而使得进入反应区的第一气体均匀且充分地与第一进气装置接触进而精确地控制第一气体的温度。 [0051] 6) the first air intake means is a diffusion plate, a diffusion of the first gas inlet and the gas diffusion plate having an upper surface and a groove and a lower surface opposite the upper, the upper surface is provided with, the lower surface is provided with a first plurality of pores; the first gas sequentially into the reaction zone via the first gas inlet, a gas diffusion grooves and said first hole, a first gas may be the first gas diffusion groove after the uniformly diffused uniformly into the reaction zone and then from the first hole, so that the gas entering the first reaction zone and sufficiently uniformly contacting a first gas inlet means and in turn accurately control the temperature of the first gas. [0052] 7)所述气体扩散槽具有至少一个第一扩散槽与多个第二扩散槽,所述第一扩散槽沿着所述扩散盘的周沿环形设置,所述第二扩散槽沿着所述扩散盘的半径方向设置,所述第一扩散槽对进入第一扩散槽中的第一气体进行缓冲,使第一气体在第一扩散槽中均匀扩散,从而使进入第一气体均匀地流进所述多个第二气体扩散槽,进一步增加了第一气体扩散至反应区的均匀性。 [0052] 7) the at least one gas diffusion groove having a first groove and a plurality of second diffusion diffusion grooves, said first groove is provided along an annular diffusion along a circumference of the diffusion plate, the second diffusion along a groove the radial direction of the diffusion plate is provided, the first diffusion into the first groove of the first gas diffusion buffering tank, so that the first gas diffusion in the first diffusion tank uniformly, so that the gas uniformly into the first flows into the second gas diffusion plurality of grooves, further increases the homogeneity of the first gas diffusion through the reaction zone. [0053] 8)所述第一进气口设置为两个,分别设置在所述扩散盘的相对两侧,在保证第一气体较高流量的同时,结构简单,提高了第一气体流动的均匀性。 [0053] 8) the first intake port is set to two, are disposed on opposite sides of the diffuser plate, while ensuring high flow rate of the first gas, a simple structure, improves the flow of the first gas uniformity. [0054] 9)任一所述第一进气口设置在所述第一扩散槽上,且位于所述相邻两第二扩散槽之间,如此第一气体会先在第一扩散槽内可以充分扩散后,进入第二扩散槽,而不会直接进入一特定的第二气体扩散槽,造成第二气体在第二扩散槽中分布的不均匀,从而增加了第一气体进入反应区的均匀性。 Any one of [0054] 9) a first air inlet disposed on said first diffusion groove, and between two adjacent second diffusion channel, such that the first gas will first groove in the first diffusion after sufficiently diffused into the second diffusion tank without direct access to a particular second gas diffusion groove, resulting in uneven diffusion of the second groove in the second gas distribution, thereby increasing the gas entering the first reaction zone uniformity. [0055] 10)所述第二进气装置包括导气盘以及若干气体分配管;所述喷淋组件还包括第二进气通道,所述第二进气通道贯穿所述扩散盘且与所述导气盘连通;所述气体分配管上设置有若干第二气孔,所述气体分配管的一端与所述导气盘连接;所述第二气体依次经由所述第二进气通道、导气盘、气体分配管以及所述第二气孔进入所述反应区,由于从第二进气通道引入的第二气体先在所述气体扩散盘中缓冲后再流入到所述气体分配管中,从而增强了第二气体在各个气体分配管之间分配的均匀性,保证了第二气体均匀地进入所述反应区。 [0055] 10) the second intake air guide means comprises a disc and a plurality of gas distribution pipes; the showerhead assembly further comprises a second intake passage, said intake passage through said second diffuser plate and with the communicating said air guide plate; said gas distribution pipe disposed on a plurality of second pores, the gas distribution tube having one end connected to the air guide plate; the second gas sequentially through the second intake passage, guide disk gas, the gas distribution tube and a second hole into the reaction zone, since the second gas is introduced from the second intake passage to flow into the gas distribution tubes and then the gas diffusion in the buffer tray, thereby enhancing the uniformity of the gas in the second gas distribution pipes between the respective distribution to ensure that the gas uniformly into the second reaction zone. [0056] 11)所述各气体分配管等长,并围绕所述导气盘呈放射状均匀排布,在保证第二气体均匀扩散的同时,所述第二进气装置结构简单,节省了空间。 [0056] 11) the length of each of the gas distribution tubes, and surrounding the air guide plate arranged radially uniformly, while ensuring a uniform diffusion of the second gas, the second intake apparatus simpler structure, saves space . 附图说明[0057] 图1是现有技术一种喷淋组件的结构示意图; [0058] 图2是本发明实施例一的CVD装置的结构示意图;[0059] 图3是沿图2中AA'方向得到的结构示意图;[0060] 图4是本发明实施例二的CVD装置的结构示意图;[0061] 图5是沿图4中BB'方向得到的结构示意图;[0062] 图6是本发明实施例三的CVD装置的结构示意图;[0063] 图7是沿图6中CC'方向得到的结构示意图;[0064] 图8是本发明实施例四的CVD装置的结构示意图;[0065] 图9是本发明实施例四的喷淋组件的上表面结构示意图;[0066] 图10是本发明实施例四的喷淋组件的下表面结构示意图。 BRIEF DESCRIPTION [0057] FIG. 1 is a schematic view of one kind prior art showerhead assembly; [0058] FIG. 2 is a schematic diagram of a CVD apparatus of the embodiment of the present invention; [0059] FIG. 3 taken along line AA in FIG. 2 'structural diagram direction obtained; [0060] FIG. 4 is a schematic structural diagram of a CVD apparatus according to a second embodiment of the present invention; [0061] Figure 5 is taken along line BB in FIG. 4' structural diagram direction obtained; [0062] FIG 6 is present schematic structural diagram of a CVD apparatus according to a third invention embodiment; [0063] FIG. 7 is a schematic structural diagram in FIG. 6 CC 'direction obtained; [0064] FIG. 8 is a schematic view of a CVD apparatus according to a fourth embodiment of the present invention; [0065] 9 is a schematic upper surface configuration of the shower assembly according to a fourth embodiment of the present invention; [0066] FIG. 10 is a diagram showing the structure of the lower surface of the shower assembly according to a fourth embodiment of the present invention. 具体实施方式[0067] 为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。 DETAILED DESCRIPTION [0067] For the above-described objects, features and advantages of the present invention can be more fully understood in conjunction with the accompanying drawings a detailed description of specific embodiments of the present invention. [0068] 在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是本发明还可以采用其他不同于在此描述的其它方式来实施,因此本发明不受下面公开的具体实施例的限制。 [0068] forth in the following description, numerous specific details in order to provide a thorough understanding of the present invention, the present invention also in other ways other than described may be employed to implement, therefore the present invention is not limited to the specific embodiments disclosed below limit. [0069] 正如背景技术部分所述,CVD装置中需要通入多种气体,现有的CVD装置将通入的所有气体统一加热到相同温度,但不同气体所需的温度存在差异,因此降低了薄膜沉积的速率,在薄膜中引入了缺陷,造成了原材料的浪费,提高了生产成本。 All gas [0069] As described in the background, into the CVD apparatus requires a plurality of gases, a conventional CVD apparatus will be unified into heated to the same temperature, but there are differences in temperature required for the different gases, thereby reducing the film deposition rate, the introduction of defects in the film, resulting in waste of raw materials, production cost is increased. [0070] 为克服上述缺陷,本发明提供了一种化学气相沉积装置,包括:反应腔、冷却装置、 位于所述反应腔顶部的喷淋组件以及与所述喷淋组件相对设置的基座,所述基座具有加热单元,所述喷淋组件包括第一进气装置以及第二进气装置,用于分别将第一气体以及第二气体传输至基座与喷淋组件之间的反应区;设置在所述第一进气装置和所述第二进气装置之间的间隔件,所述冷却装置、所述第一进气装置、所述间隔件和所述第二进气装置依次层叠设置,所述间隔件的热传导系数小于所述第一进气装置的热传导系数,在所述加热单元加热过程中,所述第一进气装置与所述第二进气装置具有不同的温度。 [0070] In order to overcome the above drawbacks, the present invention provides a chemical vapor deposition apparatus, comprising: a reaction chamber, cooling means, positioned showerhead assembly and the reaction chamber base and the top of the shower assembly disposed opposite, the base having a heating unit, the showerhead assembly comprises a first inlet means and second inlet means, respectively, for the reaction zone between the first gas and the second gas flow to the base of the shower assembly ; spacer member disposed between said first inlet means and said second inlet means, said cooling means, said first air intake means, said spacer member and said second inlet means sequentially stacked, the heat transfer coefficient of the spacer is smaller than the first inlet means of the thermal conductivity, the heating unit heating process, the first intake means and the second intake means having different temperatures . 所述第一进气装置与所述冷却装置相邻而进行直接的热交换,所述第一进气装置与所述第二进气装置之间设置有所述间隔件,因此所述第二进气装置需要通过所述间隔件与所述第一进气装置进行热交换,所述第一进气装置再与所述冷却装置进行热交换,而且,所述间隔件的热传导系数小于所述第一进气装置的热传导系数,使得所述第二进气装置与所述第一进气装置之间的热交换受到所述间隔件的阻隔,从而使得所述第一进气装置与所述第二进气装置具有不同的温度。 The first intake means and cooling means adjacent said direct heat exchange between the first intake means and said second inlet means is provided with said spacer member, whereby said second the air intake device need the spacer heat exchange with the first air intake means, the first intake means and then by heat exchange with the cooling means, and coefficient of thermal conductivity of the spacer is smaller than the first intake means thermal conductivity, such that the second intake means and the heat exchange between the first intake barrier by means of the spacer, so that the first intake means and said the second air intake means having different temperatures. 避免了分解温度低的气体在高温下先发生预分解后又与分解温度高的气体反应并产生大量固体颗粒,降低了沉积在喷淋组件上的固体颗粒脱离到薄膜上的可能性,也避免了分解温度高的气体在低温下无法进行分解,提高了薄膜沉积的速率,提高了薄膜的质量,节省了原材料,降低清洗以及生产成本。 Low decomposition temperatures to avoid the high temperature gas before decomposition occurs after the pre-decomposition reaction of the high temperature of the gas and produces a large amount of solid particles, reducing the deposition of solid particles on the showerhead assembly to the possibility of departing from the film, but also to avoid high decomposition temperature of the gas can not be decomposed at a low temperature, increases the rate of film deposition, improve the quality of the film, to save raw materials, cleaning and reducing production costs. [0071] 下面结合附图进行详细说明。 [0071] The following detailed description in conjunction with the accompanying drawings. [0072] 实施例一[0073] 图2是本实施例CVD装置的结构示意图,图3是沿图2中AA'方向得到的结构示意图。 [0072] Example a [0073] FIG. 2 is a structural diagram of a CVD apparatus according to the present embodiment, and FIG. 3 is a schematic view along the direction AA '2 is obtained. 如图2和图3所示,本实施例所述的CVD装置包括:[0074]反应腔 600 ;[0075] 冷却装置200 ;[0076] 位于所述反应腔600顶部的喷淋组件,所述喷淋组件包括第一进气装置300以及第二进气装置400,用于分别将第一气体以及第二气体传输至基座100与喷淋组件之间的反应区;[0077] 设置在所述第一进气装置300和所述第二进气装置400之间的间隔件700,所述冷却装置200、所述第一进气装置300、所述间隔件700和所述第二进气装置700依次层叠设置,所述间隔件700的热传导系数小于所述第一进气装置300的热传导系数;[0078] 与所述喷淋组件相对设置的基座100,待处理衬底500位于基座100上,所述基座100具有加热单元120。 2 and FIG. 3, CVD apparatus of the present embodiment comprises: [0074] The reaction chamber 600; [0075] The cooling device 200; [0076] The showerhead assembly located at the top of the reaction chamber 600, the spray assembly 300 includes a first inlet means and second inlet means 400, for respectively transmitting the first gas and the second gas to the reaction zone between the base 100 and showerhead assembly; [0077] provided that said spacer member 400 between a first intake means 300 and the second intake means 700, the cooling device 200, the first intake means 300, the spacer 700 and the second intake device 700 are sequentially stacked, the heat transfer coefficient of the spacer member 700 is smaller than the thermal conductivity of the first intake means 300; [0078] base and disposed opposite the shower assembly 100 is located in the base substrate 500 to be processed on the base 100, the base 100 having a heating unit 120. [0079] 本实施例中包括设置在第一进气装置300和第二进气装置400之间的间隔件700, 所述冷却装置200、所述第一进气装置300、所述间隔件700和所述第二进气装置400依次层叠设置,间隔件700将两个进气装置隔离,且所述间隔件700的热传导系数小于所述第一进气装置300的热传导系数。 [0079] In the present embodiment comprises a spacer member disposed between the first intake means 300 and second intake device 400 700, the cooling device 200, the first intake means 300, the spacer 700 and the second intake means 400 are sequentially stacked, the spacer 700 isolate the two air intake device, and the spacer member 700 is smaller than the coefficient of thermal conductivity coefficient of thermal conductivity of the first inlet device 300. 所述第一进气装置300与所述冷却装置200相邻而进行直接的热交换,所述第一进气装置300与所述第二进气装置400之间设置有所述间隔件700,因此所述第二进气装置400需要通过所述间隔件700与所述第一进气装置300进行热交换, 所述第一进气装置300再与所述冷却装置200进行热交换,而且,所述间隔件700的热传导系数小于所述第一进气装置300的热传导系数,使得所述第二进气装置400与所述第一进气装置300之间的热交换受到所述间隔件700的阻隔,从而使得所述第一进气装置300与所述第二进气装置400具有不同的温度。 The first intake means 300 and 200 adjacent to the cooling apparatus for direct heat exchange, the first intake means 300 and 400 disposed between the second intake means has the spacer 700, Thus the second intake apparatus 400 through the spacer 700 requires heat exchange with the first intake means 300, the first intake means 300 and then subjected to heat exchange with the cooling apparatus 200, and, the spacer member 700 is smaller than the thermal conductivity of the first air intake means 300, the coefficient of thermal conductivity, such that the second intake means 400 of heat exchange between the first intake means 300 with the spacer 700 by barrier such that the first intake means 300 and the second intake means 400 have different temperatures. 避免了分解温度低的气体在高温下先发生预分解后又与分解温度高的气体反应并产生大量固体颗粒,降低了沉积在喷淋组件上的固体颗粒脱离到薄膜上的可能性,也避免了分解温度高的气体在低温下无法进行分解,提高了薄膜沉积的速率,提高了薄膜的质量,节省了原材料,降低清洗以及生产成本。 Low decomposition temperatures to avoid the high temperature gas before decomposition occurs after the pre-decomposition reaction of the high temperature of the gas and produces a large amount of solid particles, reducing the deposition of solid particles on the showerhead assembly to the possibility of departing from the film, but also to avoid high decomposition temperature of the gas can not be decomposed at a low temperature, increases the rate of film deposition, improve the quality of the film, to save raw materials, cleaning and reducing production costs. [0080] 所述第一气体包括反应前体、载气、吹扫气体中的一种或多种,所述第二气体也包括反应前体、载气、吹扫气体中的一种或多种,可以根据传输气体的不同,使所述第一进气装置300与所述第二进气装置400具有不同的温度,因此所述第一气体与所述第二气体具有不同的温度。 [0080] The first reaction precursor gas comprises a carrier gas, the purge gas is one or more of the second reaction precursor gas also includes a carrier gas, the purge gas is one or more species, according to the different transport gas, so that the first intake means 300 and the second intake means 400 having different temperatures, the first gas and the second gas having different temperatures. [0081] 所述CVD装置可以为MOCVD装置、LPCVD装置、PCVD装置或ALD装置中的一种。 [0081] The CVD apparatus may be a MOCVD apparatus, an LPCVD apparatus, ALD apparatus, or a PCVD apparatus. 以下以所述CVD装置为MOCVD装置为例,即所述第一进气装置300用于传输III族金属有机源,所述第二进气装置400用于传输V族氢化物源为例进行说明,由于MOCVD生长工艺要求极高,通常需要极高的温度控制,且需要精确控制反应气体的配比,而III族金属有机源的分解温度与V族氢化物源的分解温度有较大差异,因此当控制使III族金属有机源和V族氢化物源的温度不同时,使得III族金属有机源的与V族氢化物源的接受到不同分解温度, 便可减少副反应的发生,提高II1-V族化合物半导体的质量和沉积速率,防止III族金属有机源和V族氢化物源的浪费。 In the following the MOCVD apparatus is a CVD apparatus as an example, i.e., the first intake means 300 for transmitting a Group III metal organic source of the second intake means 400 for transmitting a Group V hydride source as an example Since MOCVD growth process requires extremely high, typically require extremely high temperature control and the precise control of the ratio of the reaction gas, the decomposition temperature of the group III metal organic decomposition temperature of the source of a group V hydride source are quite different, Therefore, when controlling the temperature of a group III metal source and group V organic hydride source are different, so that different decomposition temperatures receive a group III metal organic source and the group V hydride source, can reduce the incidence of side effects, improve II1 -V compound semiconductor quality and deposition rate, preventing the waste of the group III and group V metal-organic source of hydride source. [0082] 此时所述第一进气装置300的温度小于所述第二进气装置400的温度,但不应以此限制本发明的保护范围。 [0082] At this time, the temperature of the first intake means 300 is less than the temperature of the second air intake means 400, but should not be used to limit the scope of the present invention. 需要说明的是,在第一进气装置300传输III族金属有机源和第二进气装置400传输V族氢化物源的同时,第一进气装置300和第二进气装置400还可以同时传输载气,如:氢气或氮气。 Incidentally, while the first inlet 300 transmission means a group III metal organic source gas inlet means 400 and the second transmission of the group-V hydride source, a first intake means 300 and the second air intake means 400 may also simultaneously transmission carrier gas, such as: hydrogen or nitrogen. [0083]所述 III 族金属有机源包括Ga(CH3) 3、In (CH3) 3、A1 (CH3) 3、Ga(C2H5) 3、Zn (C2H5) 3 气体中的一种或多种,其分解温度大于或等于35°C且小于或等于600°C。 [0083] the group III metal organic source comprises Ga (CH3) 3, In (CH3) 3, A1 (CH3) 3, Ga (C2H5) 3, Zn (C2H5) 3, one or more gases, which decomposition temperature greater than or equal to 35 ° C and less than or equal to 600 ° C. 所述V族氢化物源包括NH3、PH3、AsH3气体中的一种或多种,其分解温度大于或等于135°C且小于或等于800°C。 The group-V hydride source comprises NH3, PH3, AsH3 gas is one or more, the decomposition temperature is greater than or equal to 135 ° C and less than or equal to 800 ° C. 因此,本实施例中,优选地,所述第一进气装置300与所述第二进气装置400之间的温度差大于或等于10(TC且小于或等于600°C。在本实施例需要使所述第一进气装置300的温度大于或等于35°C且小于或等于600°C,所述第二进气装置400的温度大于或等于135°C且小于或等于800°C。由于III族金属有机源的分解温度远低于V族氢化物源的分解温度,本实施例使得III族金属有机源和V族氢化物源的温度分别处于各自较佳的分解温度范围内, 从而可以较快的反应速率得到较高质量的πι-v族致密薄膜。[0084] 所述基座100包括:支撑座110,一个或多个待处理衬底500可以设置在所述支撑座110的上表面;加热单元120,设置在所述支撑座110下方,用于对所述衬底500进行加热。[0085] 本实施例中第一进气装置300的热传导系数大于间隔件700的热传导系数,由于所述第二进气装置400需要通过 Thus, in this embodiment, the present preferred embodiment, the first intake means 300 and the second intake means 400 the difference between the temperature equal to or greater than 10 (TC and less than or equal to 600 ° C. In this embodiment necessary to make the temperature of the first intake means 300 is greater than or equal to 35 ° C and less than or equal to 600 ° C, the temperature of the second intake means 400 is greater than or equal to 135 ° C and less than or equal to 800 ° C. Since a group III metal organic decomposition temperature of the source is much lower than the decomposition temperature of the group V hydride source, the present embodiment makes an organic group III metal source and group V hydride source temperature, respectively, at their respective preferred decomposition temperature range, faster reaction rate can be obtained πι-v group dense films of higher quality [0084] the base 100 comprises: a support base 110, the one or more substrates to be processed 500 may be provided on the support base 110 an upper surface; a heating unit 120 disposed below the support base 110 for heating the substrate 500 [0085] in this example embodiment a first intake means 300 is greater than the coefficient of thermal conductivity coefficient of thermal conductivity of the spacer 700. Since the second intake means 400 need 述间隔件700再与所述冷却装置200进行热交换,所述间隔件700降低了第二进气装置400与所述冷却装置200之间的热交换速率,故冷却装置200对第一进气装置300的冷却效果必然大于对第二进气装置400的冷却效果。[0086] 所述第二进气装置400和所述间隔件700具有穿透所述第二进气装置300和所述间隔件700的区域,所述第一进气装置300通过所述区域直接接受所述基座100的加热器120的热辐射。[0087] 所述第一进气装置300的热辐射系数可以大于所述第二进气装置400的热辐射系数,如:所述第一进气装置300的材料可以为石墨或碳化硅,或是石墨与碳化硅的复合物和叠层物,所述第二进气装置400的材料成分可以包括钢、铝、铜、金、银中的一种或多种。尽管第一进气装置300的热辐射系数可以大于所述第二进气装置400的热辐射系数,使得所述第一进气装置300具有更强的热辐 Said spacer member 700 and then by heat exchange with the cooling device 200, the spacer 700 reduces the air intake means 400 and the second rate of heat transfer between the cooling device 200, so that the cooling device 200 first intake cooling device 300 must be greater than the cooling effect of the second intake apparatus 400. [0086] the second intake means 400 and the spacer 700 penetrating the second intake means 300 and the spacer region 700 of the first intake means 300 through the heat radiation region directly receiving the heater 120 of the base 100. [0087] the first air intake means may emissivity of greater than 300 thermal emissivity of said second intake device 400, such as: the first intake means 300 may be a graphite material or silicon carbide, graphite or silicon carbide and composite laminate, a second inlet component material intake device 400 may include steel, aluminum, copper, gold, silver, one or more. Although the first heat radiation coefficient intake means 300 may be greater than the thermal emissivity of the second intake means 400 , such that the first intake means 300 having a greater thermal radiation 射的吸收能力,然而,由于所述冷却装置200、所述第一进气装置300、所述间隔件700和所述第二进气装置400依次层叠设置,且所述间隔件700的热传导系数小于所述第一进气装置300的热传导系数,所述间隔件700阻隔了所述第二进气装置400与所述第二进气装置300之间的热交换,因此仍然可以保证所述第一进气装置300的温度低于所述第二进气装置400的温度。优选地,由于石墨的价格比较低且热传导性能比较好,不锈钢物理化学性能稳定,因此所述第一进气装置300的材料为石墨,所述第二进气装置400的材料为不锈钢,从而降低了第一进气装置300和第二进气装置400 的生产成本。 Emitted absorption capacity, however, since the cooling device 200, the first intake means 300, 400 are sequentially stacked member 700 and the second inlet means of said spacer, said spacer and thermal conductivity of 700 is smaller than the first intake means 300 of heat transfer coefficient, the spacer 700 blocking the air intake means 400 of the second heat exchange means between the second inlet 300, and thus can guarantee the first a temperature of the intake device 300 is lower than the temperature of the second intake means 400. preferably, the graphite due to the relatively low price and relatively good thermal conductivity, stable physical and chemical properties of stainless steel, so the first intake means 300 graphite material, the second intake means is a stainless steel material 400, thereby reducing the production cost of the first air intake means 300 and the second device 400. [0088] 所述第一进气装置300的热辐射系数优选的可以等于所述第二进气装置400的热辐射系数,如此,可以确保所述第一进气装置300与所述第二进气装置400之间的温度差。 [0088] the first intake means 300 is preferably a heat radiation coefficient may be equal to the second coefficient of thermal radiation intake means 400, thus, ensuring the first intake means 300 and the second inlet 400 a difference between the temperature of the gas apparatus. 进一步的,所述第一进气装置300的热辐射系数还可以小于所述第二进气装置400的热辐射系数。 Further, the first intake means 300 emissivity of thermal radiation may also be smaller than the coefficient of the second intake apparatus 400. 此时,第一进气装置300的热辐射系数小于第二进气装置400的热辐射系数,就会进一步确保所述第一进气装置300与所述第二进气装置400之间的温度差达到一定的数值,从而更加容易实现所述第一进气装置300与所述第二进气装置400之间温度的不同。 In this case, the heat radiation coefficient of the first air intake means 300 is less than the second coefficient of thermal radiation intake device 400, will further ensure that the temperature between the inlet means 400 of the first 300 and the second intake means difference reaches a certain value, making it easier to achieve different temperatures between 400 and the first intake means 300 of the second air intake means. [0089] 所述间隔件700的热传导系数小于所述第一进气装置300的热传导系数;所述第一进气装置300的材料可以为石墨或碳化硅,所述间隔件700的材料成分可以包括钢、铝、 铜、金、银中的一种或多种。 [0089] The thermal conductivity of the spacer member 700 is smaller than the first air intake means 300, the coefficient of thermal conductivity; the first intake means 300 may be a graphite material or silicon carbide, the material composition of the spacer member 700 may be including steel, aluminum, copper, gold, silver, one or more. 优选地,由于石墨的价格比较低且热传导性能比较好,不锈钢物理化学性能稳定,因此所述第一进气装置300的材料为石墨,所述间隔件700的材料为不锈钢,从而降低了第一进气装置300和间隔件700的生产成本。 Preferably, due to the relatively low price of graphite and relatively good thermal conductivity, stable physical and chemical properties of stainless steel, the material of the device 300 is thus the first intake graphite material of the spacer member 700 of stainless steel, thereby reducing the first the air intake device 300 and the spacer 700 is the production costs. [0090] 所述间隔件700的热传导系数可以大于或等于所述第二进气装置400的热传导系数,此时第一进气装置300的热传导系数必然大于所述第二进气装置400的热传导系数。 [0090] The thermal conductivity of the spacer member 700 may be greater than or equal to the second inlet means 400 of the thermal conductivity, while the first air intake means 300 of the heat transfer coefficient must be greater than the second intake means 400 of heat conduction coefficient. 如:第一进气装置300的材料为石墨,间隔件700的材料为铜,所述第二进气装置400的材料为不锈钢。 Such as: a first intake means 300 is a graphite material, the spacer material 700 is made of copper, the material of the second air intake device 400 is stainless steel. [0091] 所述间隔件700的热传导系数还可以小于所述第二进气装置400的热传导系数, 此时第一进气装置300的热传导系数可以大于所述第二进气装置400的热传导系数,如:第一进气装置300的材料为石墨,所述第二进气装置400的材料为银,所述间隔件700的材料为金;第一进气装置300的热传导系数还可以小于或等于所述第二进气装置400的热传导系数,如:所述间隔件700的材料为不锈钢,所述第一进气装置300和所述第二进气装置400的材料均为石墨。 [0091] The heat transfer coefficient of the spacer member 700 may also be lower than the thermal conductivity of the second intake means 400, while the first thermal conductivity of the air intake device 300 may be greater than the second intake means 400 in heat transfer coefficient , such as: a first intake means 300 is a graphite material, the material of the second air intake device 400 is silver, the spacer material 700 is gold; a first thermal conductivity of the air intake device may also be less than 300, or is equal to the second intake means 400 of heat transfer coefficient, such as: the spacer material 700 is stainless steel, the first intake means 300 and the second intake means 400 are graphite material. 如此,由于所述间隔件700的存在,使得所述第二进气装置400的材料选择更为广泛,有利于所述化学气相趁机装置制造成本的降低。 Thus, the presence of the spacer member 700, such that the second intake means 400 is wider selection of materials, help to reduce the opportunity cost of manufacturing chemical vapor apparatus. [0092] 优选地,所述第一进气装置300的热传导系数大于所述第二进气装置400的热传导系数,所述第一进气装置300、所述间隔件700和所述第二进气装置400的热传导系数依次减小,从而冷却装置200对第一进气装置300和第二进气装置400的冷却效果依次降低, 再加上所述第二进气装置400需要通过所述间隔件700与所述冷却装置200进行热交换, 因此可以保证了第一进气装置300的温度小于第二进气装置400的温度。 [0092] Preferably, the first intake means 300 is greater than the thermal conductivity of the second intake means 400 of the heat transfer coefficient, the first intake means 300, the spacer 700 and the second inlet thermal conductivity gas apparatus 400 sequentially reduced, thereby reducing the cooling effect 200 sequentially first intake means 300 and the second inlet means of the cooling means 400, coupled with the second inlet means through said spacing 400 need member 700 with the cooling heat exchange device 200, it is possible to ensure that the temperature of the first air intake means 300 is less than the temperature of the second air intake means 400. [0093] 为了使第一进气装置300的温度大于或等于35°C且小于或等于600°C,第二进气装置400的温度大于或等于135°C且小于或等于800°C,本实施例中所述冷却装置200的温度可以大于或等于10°C且小于或等于100°C,所述加热单元120的温度可以大于或等于1000°C且小于或等于1500°C。 [0093] In order to make the temperature of the first air intake means 300 is greater than or equal to 35 ° C and less than or equal to 600 ° C, the temperature of the second air intake means 400 is greater than or equal to 135 ° C and less than or equal to 800 ° C, the present实施例中所述冷却装置200的温度可以大于或等于10°C且小于或等于100°C,所述加热单元120的温度可以大于或等于1000°C且小于或等于1500°C。例如:当所述冷却装置200的温度为50°C,加热单元120的温度为1200°C时,第一进气装置300的温度为290°C,第二进气装置400的温度为680°C。进一步的,通过控制所述加热单元120和所述冷却装置200的温度,主要是通过控制所述冷却装置200的温度,就可以根据不同气体成分调节第一进气装置300和第二进气装置400 的温度。 [0094] 本实施例中所述间隔件700的厚度可以大于或等于O.1mm且小于或等于2mm,如: O. lmm>0. 5mm>1. Omm 或2mm 等。 [0095] 所述CVD装置还可以包括:由温度传感器和气压传感器组成的检测装置(图中未示出);控制装置(图中未示出),其分别连接各温度传感器、气压传感器、冷却装置200和加热单元120。 [0096] 所述气压传感器可以为I个,设置在所述反应区,将检测到的反应区的当前气压发送给控制装置,控制装置分析得到反应区的当前气压和薄膜沉积反应所需的气压之差, 进而控制装置实现对反应腔600的气压调整,直至使反应区的当前气压等于薄膜沉积反应所需的气压。 [0097] 所述温度传感器可以为多个,可以在第一进气装置300、第二进气装置400、冷却装置200和加热单元120上分别设置一个温度传感器,分别用于检测第一进气装置300的当前温度、第二进气装置400的当前温度、冷却装置200的当前温度和加热单元120的当前温度,并将检测得到的上述温度发送给控制装置,控制装置通过分析第一进气装置300的当前温度与第一进气装置300所需温度之间的温度之差、第二进气装置400的当前温度与第二进气装置400所需温度之间的温度之差来调节冷却装置200的温度或加热单元120的温度,直至使第一进气装置300的当前温度大于或等于35°C且小于或等于600°C,第二进气装置400的当前温度大于或等于135°C且小于或等于800°C,从而可以更精确地控制薄膜沉积的过程。 [0098] 在MOCVD装置中,所述反应腔600的材料一般为不锈钢。 [0099] 所述支撑座110的材料可以为石墨,优选地,所述支撑座110还可以在石墨的表面设置一层碳化硅(SiC)层,从而使得支撑座110具有耐高温、抗氧化、纯度高和耐酸碱盐及有机试剂腐蚀等特性,物理化学性能更稳定。 [0100] 所述加热单元120具体可以为射频加热器、红外辐射加热器或电阻加热器等,可以根据反应腔600的尺寸和材料进行不同的选择。在射频加热方式中,石墨的支撑座110 被射频线圈通过诱导耦合加热,这种加热形式在大型的反应腔600中经常采用,但是通常系统过于复杂。为了避免系统的复杂性,在稍小的反应腔600中,通常采用红外辐射加热方式,卤钨灯产生的热能被转化为红外辐射能,石墨的支撑座110吸收这种辐射能并将其转化回热能。在电阻加热方式中,通过电阻丝的发热,进而实现对支撑座110的加热。 [0101] 所述加热单元120还可以集成于所述支撑座110内,其对于本领域的技术人员是熟知的,故在此不再赘述。 [0102] 所述冷却装置200具有冷却通道,用以通入冷却气体或者冷却液体。具体地,所述冷却装置200可以采用水冷冷却,也可以采用风冷冷却,其对应的具体结构对于本领域的技术人员是熟知的,故在此不再赘述。本实施例中通过控制冷却装置200的温度,可以使两个进气装置具有不同的温度变化值,从而使得两个进气装置的温度不同;此外,冷却装置200还会使得喷淋组件处于较低的温度,延长了喷淋组件的使用寿命。 [0103] 所述CVD装置还可以包括:旋转驱动单元(图中未示出),所述旋转驱动单元用于驱动所述基座100或喷淋组件在所述化学气相沉积装置的沉积过程中进行旋转,从而使得薄膜沉积更均匀,优选地,所述旋转驱动单元驱动所述基座100旋转。 [0104] 再次参见图3所示,本实施例中第一进气装置300为的气体扩散板,其可以为一体成型的板体。第二进气装置400包括多个平行设置的气体分配管道410,气体分配管道410 上设置有多个第二气孔(图中未示),未与气体分配管道410对应的第一进气装置300的位置上也设置有多个第一气孔(图中未示出)。 [0105] 所述喷淋组件还可以包括一个或多个第一进气管(图中未示出),所述第一进气管贯穿所述冷却装置200连接所述第一进气装置300,所述第一气体从所述第一进气管进入所述第一进气装置300,并从第一进气装置300的第一气孔进入反应区。 [0106] 所述喷淋组件还可以包括至少一个贯穿冷却装置200和第一进气装置300的第二进气管,所述至少一个第二进气管与所述气体分配管道410相连,所述至少一个第二进气管可以连接在同一个储存第二气体的装置上,所述第二气体从第二进气管进入气体分配管道410,并从气体分配管道410上的第二气孔进入反应区。每个所述气体分配管道410的形状和尺寸可以相同,也可以不同。可选的,所述喷淋组件还包括多个第二气体进气管,多个气体进气管分别与所述多个气体分配管道410分别连接。 [0107] 优选地,所述第一气孔和第二气孔分别均匀地设置在第一进气装置300和气体分配管道410上, 从而使得第一气体和第二气体在基座100上方分布均匀,保证了薄膜沉积的均匀性。 [0108] 本实施例中所述间隔件700的形状与多个所述气体分配管道410的形状相同,即间隔件700也为多个,在每个气体分配管道410与所述第一进气装置300之间都设置有一个与所述第一进气装置300大小相同的间隔件700。所述间隔件700可以进一步的将第一进气装置300和第二进气装置400相连结,即所述间隔件700同时接触第一进气装置300 和第二进气装置400。优选地,所述气体分配管道410和间隔件700均匀地设置在第一进气装置300的下方,从而使得第一气体和第二气体混合更均匀。 [0109] 所述第一气孔和第二气孔的具体数目和尺寸由第一气体的流量速率、第二气体的流量速率以及反应所需的第一气体和第二气体的总量决定。 [0110] 可选的,所述第一进气装置300还可以为圆形扩散盘;所述第二进气装置400还可以为圆环形扩散管;所述第一进气装置300和所述第二进气装置400也可以均为多边形等, 其不应在此限制本发明的保护范围。 [0111] 实施例二[0112] 图4是本发明实施例CVD装置的结构示意图,图5是沿图4中BB'方向得到的结构示意图。参见图4和图5所示,本实施例与实施例一的区别在于:所述第一进气装置300 为圆形的气体扩散板,所述第二进气装置400包括具有若干第二气孔的若干气体分配管道410和导气盘420,所述气体分配管道410为长条形,所述导气盘420为圆形。所述喷淋组件还包括第二气体进气管;所述第二气体进气管穿过冷却装置200和第一进气装置300的中心;所述每个气体分配管道410和所述第一进气装置300之间设置有一个间隔件700,所述第二气体依次通过第二气体进气管、导气盘420、气体分配管道410和第二气孔后至所述反应区,所述加热单元120在加热过程中,所述第一进气装置300与所述第二进气装置400 具有不同的温度。 [0113] 所述气体分配管道410的尺寸可以相同,也可以不同。优选地,所述气体分配管道410的尺寸相同,且所述气体分配管道410均匀地分布在第一进气装置300下方,这样可以保证第一气体和第二气体均匀地进行混合。 [0114] 优选地,所述第一气孔均匀设置在第一进气装置300上,所述第二气孔均匀设置在所述气体分配管道410上,这样也可以使得第一气体和第二气体均匀混合,最终使得衬底500上沉积薄膜的均匀性。 [0115] 可选的,所述第一进气装置300还可以为长方形的气体扩散板;所述气体分配管道410可以呈扇形;所述第一进气装置300和所述气体分配管道410也可以均为多边形,其不应在此限制本发明的保护范围。 [0116] 本实施例中通过一个第二气体进气管和导气盘420将第二气体传输至各气体分配管道410,由于所述导气盘420对从所述进气管进入的第二气体的缓冲作用,使得第二气体经过导气盘420的缓冲后能够均匀的分配到各个气体分配管道410中,从而保证了从气体分配管道410中喷出的第二气体的均匀性。 [0117] 实施例三[0118] 图6是本发明实施例CVD装置的结构示意图,图7是沿图6中CC'方向得到的结构示意图。参见图6和图7所示,本实施例与实施例一的区别在于:所述第二进气装置400 中的气体分配管道410和所述间隔件700镶嵌于所述第一进气装置300中,所述气体分配管道410朝向反应区的一面设置有多个第二气孔,所述第一进气装置300朝向反应区且未与气体分配管道410对应的位置上设置有多个第一气孔,所述加热单元120在加热过程中, 所述第一进气装置300与所述第二进气装置400具有不同的温度。 [0119] 优选地,所述气体分配管道410均匀地分布在所述第一进气装置300中,以便使得第一气体与第二气体均匀混合,最终使得衬底500上沉积薄膜的均匀。 [0120] 本实施例中所述第二进气装置400和间隔件700均镶嵌于所述第一进气装置300 中,从而使得整个装置的结构比较简单,节省了空间。 [0121] 实施例四[0122] 图8是本发明实施例CVD装置的结构示意图,图9是图8中喷淋组件上表面的结构示意图,图10是图8中喷淋组件下表面的结构示意图。参见图8、图9和图10所示,本实施例与实施例三的区别在于:所述第一进气装置300为圆形的扩散盘,所述扩散盘具有上表面以及与所述上表面相对的下表面,所述上表面紧贴所述冷却装置200,所述上表面设置有第一进气口310以及气体扩散槽320,所述第一进气口连接所述扩散槽320 ;所述下表面设置有若干第一气孔(图中未示出),所述第一气孔穿过所述扩散盘连通所述气体扩散槽320 ;所述第一气体依次经由所述第一进气口310、气体扩散槽320和所述第一气孔进入所述反应区;所述第二进气装置400包括导气盘450以及若干气体分配管430 ;所述喷淋组件还包括第二进气通道440,所述第二进气通道440贯穿所述扩散盘的中心且与所述导气盘450连接;所述气体分配管430上设置有若干第二气孔(图中未示出),所述气体分配管430的一端与所述导气盘450连通,所述间隔件700 置在气体分配管430和所述第一进气装置300之间;所述第二气体依次经由所述第二进气通道440、导气盘450、气体分配管430 以及所述第二气孔进入所述反应区。 [0123] 具体地,所述气体扩散槽320具有至少一个第一扩散槽321与多个第二扩散槽322,所述第一扩散槽321沿着所述扩散盘的周沿环形设置,所述第二扩散槽322沿着所述扩散盘的半径方向设置,所述第一扩散槽321和所述第二扩散槽322连通。第一气体通过所述第一扩散槽321流进所述第二扩散槽322。优选地,本实施例中所述第一气孔均匀设置在所述第二扩散槽322上,以使所述第一气体均匀分配到所述反应区。 [0124]为了简单起见,本实施例中所述第二气体扩散槽322为6个。所述第二气体扩散槽322的数目大于或等于3且小于或等于100,优选地,所述第二气体扩散槽322的数目大于或等于10且小于或等于50。 [0125] 所述第一进气口310可以为一个或多个。优选地,参见图8和图9所示,所述第一进气口310设置为两个,分别设置在所述扩散盘的相对两侧,此时既使得第一进气装置300 的结构比较简单,而且能够使得第一气体均匀地进入所述气体扩散槽320中。 [0126] 所述第一进气口310设置在所述第一扩散槽321上,且位于所述相邻两所述第二扩散槽322与所述第一扩散槽321联通点之间,从而使得进入到第一扩散槽321的第一气体由第一扩散槽321经过缓冲后再进入所述第二扩散槽322中,从而使的第一气体在各个第二气体扩散槽322中分配均匀。 [0127] 优选地,所述气体分配管430的形状为扇形,第二气孔均匀设置在所述气体分配管430上,以使所述第二气体均匀注入所述反应区。 [0128] 所述各气体分配管430的长度可以相等,也可以不相等。优选地,参见图10所示, 所述各气体分配管430等长,并围绕所述导气盘450呈放射状均匀排布,这样可以充分利用空间,且使得所述第二气体均匀排向所述反应区。 [0129] 进一步地,参见图10所示,所述气体分配管430的长度等于所述扩散盘的半径与所述导气盘450半径之差。 [0130] 本实施例中第二进气装置400和间隔件700均镶嵌在第一进气装置300中,从而使得所述喷淋组件结构紧凑,有利于减小所述CVD装置的体积。 [0131] 所述第二进气装置400还可以设置在所述第一进气装置300的下方,即所述第一进气装置300的第一出气面与基座100的支撑面之间的第一垂直距离大于所述第二进气装置400的第二出气面与基座100的支撑面之间的第二垂直距离,此时所述气体分配管430 与所述扩散盘之间通过所述间隔件700间隔。 [0132] 需要说明的是,所述第一进气装置300的形状还可以为长方形;所述气体分配管430的形状还可以为长条形;所述第一进气装置300和气体分配管430的形状还可以均为多边形,其不应在此限制本发明的保护范围。 [0133] 以上实施例中的喷淋组件均包括两个进气装置,通过在两个进气装置直接设置间隔件,且使间隔件的热传导系数小于设置在其上方的进气装置的热传导系数,而使得两个进气装置的温度不同。需要说明的是,喷淋组件还可以包括三个及三个以上的进气装置,类似地,通过将冷却装置与部分或全部进气装置层叠设置,且在相邻进气装置之间设置间隔件,间隔件的热传导系数小于设置在其上方的进气装置的热传导系数,同样可以使得部分或全部进气装置的温度不同。 [0134] 虽然本发明己以较佳实施例披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。

Claims (28)

1. 一种化学气相沉积装置,包括:反应腔、冷却装置、位于所述反应腔顶部的喷淋组件以及与所述喷淋组件相对设置的基座,所述基座具有加热单元,所述喷淋组件包括第一进气装置以及第二进气装置,用于分别将第一气体以及第二气体传输至基座与喷淋组件之间的反应区;其特征在于,还包括:设置在所述第一进气装置和所述第二进气装置之间的间隔件,所述冷却装置、所述第一进气装置、所述间隔件和所述第二进气装置依次层叠设置,所述间隔件的热传导系数小于所述第一进气装置的热传导系数,在所述加热单元加热过程中,所述第一进气装置与所述第二进气装置具有不同的温度。 1. A chemical vapor deposition apparatus, comprising: a reaction chamber, cooling means located in said reaction chamber at the top of the susceptor and showerhead assembly and the showerhead assembly disposed opposite said base having a heating means, the shower assembly comprising a first inlet means and second inlet means, respectively, for the reaction zone between the first gas and the second gas flow to the base of the shower assembly; characterized by, further comprising: disposed a spacer between the first intake means and said second inlet means, said cooling means, said first air intake means, said spacer means and said second inlet are sequentially stacked, coefficient of thermal conductivity of the spacer is smaller than the first inlet means of the thermal conductivity, the heating unit heating process, the first intake means and the second intake means having different temperatures.
2.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一进气装置的热传导系数等于所述第二进气装置的热传导系数。 2. The chemical vapor deposition apparatus according to claim 1, wherein said first air intake means is equal to the thermal conductivity of the second intake means thermal conductivity.
3.如权利要求2所述的化学气相沉积装置,其特征在于,所述第一进气装置和与所述第二进气装置的材料为包括石墨或碳化硅的材料,所述间隔件的材料成分包括钢、铝、铜、金、银中的一种或多种。 3. The chemical vapor deposition apparatus according to claim 2, wherein said air intake means and first and second inlet means comprising a material the material is graphite or silicon carbide, the spacer component materials include steel, aluminum, copper, gold, silver, one or more.
4.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一进气装置的热传导系数大于所述第二进气装置的热传导系数。 4. The chemical vapor deposition apparatus according to claim 1, wherein said first air intake means is greater than the thermal conductivity of the second inlet means of the thermal conductivity.
5.如权利要求4所述的化学气相沉积装置,其特征在于,所述间隔件的热传导系数大于或等于所述第二进气装置的热传导系数。 5. The chemical vapor deposition apparatus according to claim 4, characterized in that the heat transfer coefficient of the spacer is greater than or equal to the second intake means thermal conductivity.
6.如权利要求4或5所述的化学气相沉积装置,其特征在于,所述第一进气装置的材料包括石墨或碳化硅,所述第二进气装置的材料成分包括钢、铝、铜、金、银中的一种或多种。 6. The chemical vapor deposition apparatus as claimed in claim 4 or claim 5, wherein said first air intake means comprises a graphite material or silicon carbide, the second intake means material composition include steel, aluminum, copper, gold, silver, one or more.
7.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一进气装置的热辐射系数小于所述第二进气装置的热辐射系数。 7. The chemical vapor deposition apparatus according to claim 1, wherein said first air intake means heat radiation coefficient less than the second intake means heat radiation coefficient.
8.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一气体包括反应前体、载气、吹扫气体中的一种或多种。 8. The chemical vapor deposition apparatus according to claim 1, wherein the first gas comprises a reaction precursor, the carrier gas, the purge gas is one or more.
9.如权利要求1所述的化学气相沉积装置,其特征在于,所述第二气体包括反应前体、载气、吹扫气体中的一种或多种。 9. The chemical vapor deposition apparatus according to claim 1, wherein said second precursor gas comprises a reactant, carrier gas, one or more purge gases.
10.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一进气装置用于传输111族金属有机源,所述第二进气装置用于传输V族氢化物源。 10. The chemical vapor deposition apparatus according to claim 1, wherein the first intake means 111 for transmitting a metal organic source of the second intake means for transmitting a Group V hydride source.
11.如权利要求10所述的化学气相沉积装置,其特征在于,所述III族金属有机源包括Ga (CH3) 3、In (CH3) 3、Al (CH3) 3、Ga (C2H5) 3、Zn (C2H5) 3 气体中的一种或多种。 11. The chemical vapor deposition apparatus according to claim 10, wherein the group III metal organic source comprises Ga (CH3) 3, In (CH3) 3, Al (CH3) 3, Ga (C2H5) 3, 3 one or more gases Zn (C2H5).
12.如权利要求10所述的化学气相沉积装置,其特征在于,所述V族氢化物源包括NH3、PH3、AsH3气体中的一种或多种。 12. The chemical vapor deposition apparatus as claimed in claim 10, wherein said Group V hydride source comprises NH3, PH3, AsH3 gas is one or more.
13.如权利要求10所述的化学气相沉积装置,其特征在于,所述加热单元在加热过程中,所述第一进气装置的温度低于所述第二进气装置的温度。 13. The chemical vapor deposition apparatus as claimed in claim 10, characterized in that the heating unit during the heating process, the first intake device temperature is lower than the second intake apparatus.
14.如权利要求13所述的化学气相沉积装置,其特征在于,所述第一进气装置与所述第二进气装置之间的温度差大于或等于100°C且小于或等于600°C。 14. The chemical vapor deposition apparatus according to claim 13, wherein said first temperature difference between the inlet device and the second air intake means is greater than or equal to 100 ° C and less than or equal to 600 ° C.
15.如权利要求14所述的化学气相沉积装置,其特征在于,所述第一进气装置的温度大于或等于35°C且小于或等于600°C,所述第二进气装置的温度大于或等于135°C且小于或等于800°C。 15. The chemical vapor deposition apparatus 14 according to the temperature of the second intake apparatus as claimed in claim, wherein said first air intake means a temperature equal to or greater than 35 ° C and less than or equal to 600 ° C, greater than or equal to 135 ° C and less than or equal to 800 ° C.
16.如权利要求1所述的化学气相沉积装置,其特征在于,还包括:旋转驱动单元,所述旋转驱动单元用于驱动所述基座或喷淋组件在所述化学气相沉积装置的沉积过程中旋转。 16. The chemical vapor deposition apparatus according to claim 1, characterized in that, further comprising: rotation driving means, the rotary driving unit for driving the assembly of the shower base or deposited on the chemical vapor deposition apparatus during rotation.
17.如权利要求1所述的化学气相沉积装置,其特征在于,所述第二进气装置包括若干气体分配管道,每一所述气体分配管道具有若干第二气孔,至少部分所述的间隔件和气体分配管道均镶嵌于所述第一进气装置之中,所述气体分配管道向所述反应区露出所述第二气孔以使得第二气体从所述第二气孔排出。 17. The chemical vapor deposition apparatus according to claim 1, wherein said second means comprises a plurality of intake gas distribution conduit, each of said second gas distribution duct having a plurality of pores, at least a portion of the interval member and the gas distribution pipes are embedded in the first intake means in the gas distribution conduit of the second hole exposed to said second reaction zone such that the gas discharged from the second hole.
18.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一进气装置为一体成型的板体。 18. The chemical vapor deposition apparatus according to claim 1, wherein said first air intake means is a plate member formed integrally.
19.如权利要求1所述的化学气相沉积装置,其特征在于,所述冷却装置具有冷却通道,用以通入冷却气体或者冷却液体。 19. The chemical vapor deposition apparatus according to claim 1, wherein said cooling means has a cooling channel for a cooling gas into a liquid or a cooling.
20.如权利要求1所述的化学气相沉积装置,其特征在于,所述第一进气装置为扩散盘,所述扩散盘具有上表面以及与所述上表面相对的下表面,所述上表面紧贴所述冷却装置,所述上表面设置有第一进气口以及气体扩散槽,所述下表面设置有若干第一气孔;所述第一气体依次经由所述第一进气口、气体扩散槽和所述第一气孔进入所述反应区。 20. The chemical vapor deposition apparatus according to claim 1, wherein said first air intake means is a diffuser plate, said diffuser plate having an upper surface and a lower surface opposite the upper surface, the upper against the surface of the cooling device, the upper surface is provided with a first intake port and a gas diffusion groove, the lower surface is provided with a first plurality of pores; the first gas sequentially through the first intake port, the gas diffusion grooves and said hole into the first reaction zone.
21.如权利要求20所述的化学气相沉积装置,其特征在于,所述气体扩散槽具有至少一个第一扩散槽与多个第二扩散槽,所述第一扩散槽沿着所述扩散盘的周沿环形设置,所述第二扩散槽沿着所述扩散盘的半径方向设置,所述第二扩散槽连接所述第一扩散槽,第二气体通过所述第一扩散槽流入所述第二扩散槽,所述第一气孔连接所述第二扩散槽。 21. The chemical vapor deposition apparatus according to claim 20, wherein said at least one gas diffusion groove having a first groove and a plurality of second diffusion diffusion grooves, the first diffusion plate along the groove diffusion disposed along the periphery of the annular, the second diffusion groove along the radial direction of the diffuser plate is provided, the second diffusion channel connecting the first diffusion channel, the second gas flowing into said groove through said first diffusion a second diffusion slot, the first hole connected to the second diffusion channel.
22.如权利要求20所述的化学气相沉积装置,其特征在于,所述第一进气口设置为两个,分别设置在所述扩散盘的相对两侧。 22. The chemical vapor deposition apparatus according to claim 20, wherein said first intake port is set to two, are disposed on opposite sides of the diffusion plate.
23.如权利要求21所述的化学气相沉积装置,其特征在于,任一所述第一进气口设置在所述第一扩散槽上,且位于相邻两所述第二扩散槽之间。 23. The chemical vapor deposition apparatus according to claim 21, wherein any of said first air inlet disposed on said first diffusion groove and located between said two adjacent second diffusion grooves .
24.如权利要求20所述的化学气相沉积装置,其特征在于,所述第二进气装置包括导气盘以及若干气体分配管;所述喷淋组件还包括第二进气通道,所述第二进气通道贯穿所述扩散盘的中心且与所述导气盘连接;所述气体分配管上设置有若干第二气孔,所述气体分配管的一端与所述导气盘连通;所述第二气体依次经由所述第二进气通道、导气盘、气体分配管以及所述第二气孔进入所述反应区。 24. The chemical vapor deposition apparatus according to claim 20, wherein said second means comprises an intake air guide plate and a plurality of gas distribution pipes; the showerhead assembly further comprises a second intake passage, said center of the second intake passage extending through the diffuser plate and connected to the air guide plate; a plurality of second hole provided on the gas distribution pipe, one end of the gas distribution tube is in communication with the air guide plate; the said second gas sequentially through the second intake passage, the air guide plate, the gas distribution tube and a second hole into the reaction zone.
25.如权利要求24所述的化学气相沉积装置,其特征在于,所述各气体分配管等长,并围绕所述导气盘呈放射状均匀排布。 25. The chemical vapor deposition apparatus according to claim 24, wherein each of said gas distribution pipes of equal length and uniformly arranged radially around the air guide plate.
26.如权利要求25所述的化学气相沉积装置,其特征在于,所述气体分配管的长度等于所述扩散盘半径与所述导气盘半径之差。 26. The chemical vapor deposition apparatus according to claim 25, characterized in that the length of the gas distribution tube is equal to the difference between the disc radius of the disc radius gas diffusion of said guide.
27.如权利要求1所述的化学气相沉积装置,其特征在于,所述化学气相沉积装置为金属有机化合物化学气相沉积装置、低压化学气相沉积装置、等离子体化学气相沉积装置或原子层沉积装置。 27. The chemical vapor deposition apparatus according to claim 1, wherein said chemical vapor deposition apparatus is a metal organic chemical vapor deposition apparatus, a low pressure chemical vapor deposition apparatus, a plasma CVD apparatus or an atomic layer deposition apparatus .
28.如权利要求1所述的化学气相沉积装置,其特征在于,所述间隔件的厚度大于或等于0.1mm且小于或等于2mm。 28. The chemical vapor deposition apparatus according to claim 1, wherein the thickness of the spacer is greater than or equal to 0.1mm and less than or equal to 2mm.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624498A (en) * 1993-12-22 1997-04-29 Samsung Electronics Co., Ltd. Showerhead for a gas supplying apparatus
US20080199614A1 (en) * 2007-02-15 2008-08-21 Promos Technologies Inc. Method for improving atomic layer deposition performance and apparatus thereof
JP2009105165A (en) * 2007-10-22 2009-05-14 Sharp Corp Vapor phase growth device, and method of manufacturing semiconductor device
JP2010062383A (en) * 2008-09-04 2010-03-18 Sharp Corp Vapor deposition equipment and vapor deposition method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624498A (en) * 1993-12-22 1997-04-29 Samsung Electronics Co., Ltd. Showerhead for a gas supplying apparatus
US20080199614A1 (en) * 2007-02-15 2008-08-21 Promos Technologies Inc. Method for improving atomic layer deposition performance and apparatus thereof
JP2009105165A (en) * 2007-10-22 2009-05-14 Sharp Corp Vapor phase growth device, and method of manufacturing semiconductor device
JP2010062383A (en) * 2008-09-04 2010-03-18 Sharp Corp Vapor deposition equipment and vapor deposition method

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