CN103000750A - Technology for regulating preferred orientation of back electrode to achieve efficient copper indium gallium selenide - Google Patents
Technology for regulating preferred orientation of back electrode to achieve efficient copper indium gallium selenide Download PDFInfo
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- CN103000750A CN103000750A CN2011102704547A CN201110270454A CN103000750A CN 103000750 A CN103000750 A CN 103000750A CN 2011102704547 A CN2011102704547 A CN 2011102704547A CN 201110270454 A CN201110270454 A CN 201110270454A CN 103000750 A CN103000750 A CN 103000750A
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- Prior art keywords
- indium gallium
- copper indium
- gallium selenide
- back electrode
- cigs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method capable of improving photoelectric conversion efficiency of a CIGS (copper indium gallium selenide) solar cell, and preferred orientation of a back electrode Mo is regulated to regulate a vertical structure of an absorption layer and improve interface performance so as to achieve high efficiency. The method is capable of improving fill factor and current density of the CIGS solar cell, the CIGS absorption layer is grown by means of regulating the preferred orientation of the back electrode in a bottom layer, and needed (110) preferred orientation strength is formed mainly by regulating growing pressure of the back electrode Mo, thus orientation of CIGS (220/204) can be enhanced, and further the conversion efficiency of the CIGS solar cell is improved.
Description
Technical field
The present invention is about a kind of method that promotes Copper Indium Gallium Selenide (CIGS) photoelectric conversion efficiency of the solar battery, by the preferred orientation of adjusting back electrode Mo, and adjusts the vertical structure of absorbed layer, and improves interface character, reaches high efficiency target.
Background technology
At present since fossil energy gradually exhaust the danger of nuclear energy power generation, the contaminative of thermal power generation, so that the development of emerging energy obtains people's concern gradually, with the classification of solar cell kind, can be divided into (1) list, polysilicon, because developing early, the city accounts for rate about 80% at present; (2) emerging thin film solar cell accounts for market 10%, comprises amorphous silicon, microcrystal silicon, cadmium telluride, Copper Indium Gallium Selenide etc.; (3) all the other materials such as dye-sensitized solar cells etc., then wait to solve because of large tracts of land production and depleted problem, so measure considerably less.And the technology of the present invention background is for doing the method for raising for the whole conversion efficiency of Copper Indium Gallium Selenide (CIGS) solar cell, general Copper Indium Gallium Selenide is all the growth of (112) preferred orientation, this is because the copper vacancy defect on film top layer causes, Copper Indium Gallium Selenide then should be (220/204) orientation efficiently, and this structure that can be dependent on the back electrode of bottom adjusts.Summary of the invention
The present invention is a kind of method of improving Copper Indium Gallium Selenide (CIGS) solar cell fill factor, curve factor and current density, be the CuInGaSe absorbed layer of growing up by the back electrode preferred orientation of adjusting bottom, mainly be to form required (110) preferred orientation intensity via the growth pressure of adjusting back electrode Mo, so can strengthen (220/204) orientation of Copper Indium Gallium Selenide, and promote the conversion efficiency of Copper Indium Gallium Selenide (CIGS) solar cell.
Embodiment
Hereby Copper Indium Gallium Selenide of the present invention (CIGS) modular construction is illustrated such as accompanying drawing (one), be described in detail as follows: at first we utilize the sputtering method back electrode Mo film of growing up, the pressure that major control is grown up is in 2Pa ~ 3Pa, so can obtain lattice more greatly and fine and close Mo film such as figure (two) and stronger (110) preferred orientation intensity.This will significantly strengthen (220/204) orientation of the Copper Indium Gallium Selenide of follow-up growth, the XRD diffraction diagram shown in accompanying drawing (three).Then utilize chemical bath method (CBD) preparation cadmium sulfide (CdS) to form PN junction, and form a Window layer, then prepare this note of the ancient Chinese type zinc oxide (i-ZnO) with sputtering method (sputter) and form the copper indium gallium selenium solar cell assembly with the zinc-oxide film that mixes aluminium.Wherein the technology in most critical of the present invention is that the processing procedure pressure of back electrode Mo is in the scope of 2Pa ~ 3Pa, and by the control of plasma intensity, reach the back electrode of high conductivity and high tack and have (110) preferred orientation, the absorbed layer that is beneficial to the high conversion efficiency Copper Indium Gallium Selenide is grown up.
The primary clustering symbol description
1 ... kickboard glass
2 ... the Mo back electrode
3 ... Copper Indium Gallium Selenide (CIGS) absorbed layer
4 ... cadmium sulfide (CdS)
5 ... this note of the ancient Chinese zinc oxide (i-ZnO) resilient coating
6 ... zinc oxide mixes the front electrode of aluminium (ZnO:Al)
Claims (6)
1. the present invention is about a kind of method that promotes the CIGS solar cell photoelectric conversion efficiency, by adjusting back electrode
The preferred orientation of Mo, and then the vertical structure of adjustment absorbed layer, and improve interface character, it is efficient to reach the Copper Indium Gallium Selenide assembly
The target of rate.
2. Copper Indium Gallium Selenide assembly according to claim 1, employed back electrode is Mo.
3. Copper Indium Gallium Selenide assembly according to claim 1, employed absorbed layer is Copper Indium Gallium Selenide (CIGS).
4. Copper Indium Gallium Selenide assembly according to claim 1, employed N becomes cadmium sulfide (CdS).
5. Copper Indium Gallium Selenide assembly according to claim 1, employed front electrode is for this note of the ancient Chinese layer zinc oxide (i-ZnO) and mix aluminium
Zinc oxide (ZnO:Al).
6. according to Copper Indium Gallium Selenide assembly claimed in claim 1, it is 2Pa ~ 3Pa that employed back electrode Mo makes pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102704547A CN103000750A (en) | 2011-09-14 | 2011-09-14 | Technology for regulating preferred orientation of back electrode to achieve efficient copper indium gallium selenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102704547A CN103000750A (en) | 2011-09-14 | 2011-09-14 | Technology for regulating preferred orientation of back electrode to achieve efficient copper indium gallium selenide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103000750A true CN103000750A (en) | 2013-03-27 |
Family
ID=47929098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102704547A Pending CN103000750A (en) | 2011-09-14 | 2011-09-14 | Technology for regulating preferred orientation of back electrode to achieve efficient copper indium gallium selenide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103000750A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090020157A1 (en) * | 2007-06-12 | 2009-01-22 | Guardian Industries Corp. | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same |
| CN101840942A (en) * | 2010-05-19 | 2010-09-22 | 深圳丹邦投资集团有限公司 | Thin-film solar cell and manufacturing method thereof |
| CN102154622A (en) * | 2010-12-06 | 2011-08-17 | 电子科技大学 | Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell |
-
2011
- 2011-09-14 CN CN2011102704547A patent/CN103000750A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090020157A1 (en) * | 2007-06-12 | 2009-01-22 | Guardian Industries Corp. | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same |
| CN101840942A (en) * | 2010-05-19 | 2010-09-22 | 深圳丹邦投资集团有限公司 | Thin-film solar cell and manufacturing method thereof |
| CN102154622A (en) * | 2010-12-06 | 2011-08-17 | 电子科技大学 | Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 赵志明等: "CIGS薄膜太阳能电池用Mo背电极的制备与结构性能研究", 《材料导报B》 * |
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Application publication date: 20130327 |