CN102976262B - Optically-measurable MEMS (Micro-electromechanical System) encapsulating structure provided with sealing cap electrode - Google Patents
Optically-measurable MEMS (Micro-electromechanical System) encapsulating structure provided with sealing cap electrode Download PDFInfo
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Abstract
The invention provides an optically-measurable MEMS (Micro-electromechanical System) encapsulating structure provided with a sealing cap electrode. The optically-measurable MEMS encapsulating structure mainly comprises an MEMS structure, a substrate for bearing the MEMS structure, and a sealing cap on the MEMS substrate and the substrate, wherein the sealing cap is used for sealing the MEMS structure in a cavity formed between the sealing cap and the substrate; the sealing cap consists of a sealing cap substrate, a sealing cap electrode, a conductive lug, a metal layer at the bottom of the conductive lug, and a sealing ring; the sealing cap substrate is a material which is transparent for specific light rays; the sealing cap electrode 4 is positioned on the inner side of the sealing cap, is used for sensing the movement of the MEMS structure, can be a nontransparent electrode with light holes, and can be a transparent electrode without light holes; and the sealing cap electrode can be a public electrode or a discrete electrode. The optically-measurable MEMS encapsulating structure is simple in structure, and can be applied to a noncontact optical measuring method; and the encapsulating structure is further compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, and can be even directly used for encapsulating an MEMS apparatus constructed by a CMOS top layer metal-medium structure.
Description
Technical field
The present invention relates to a kind of encapsulating structure of MEMS, be specially a kind of optics and can survey and the MEMS package structure using cap sealing electrode, belong to technical field of semiconductors.
Background technology
Along with the development of technology of Internet of things, a large amount of sensors is needed to gather dissimilar data, therefore the product cost reducing MEMS sensor and actuator has great significance (as used the technique of CMOS technology compatibility, or directly making in cmos circuitry).Wherein, the envelope flow gauge of MEMS not only occupies long time in whole MEMS production process, and with high costs.In order to reduce the threshold that MEMS comes into the market, by improving the packing forms of MEMS, can be applied to simpler and easy, efficient method of testing (as non-contact optical detection method), thus reducing the cost of product.
Under normal conditions, the test of MEMS judges its architecture quality to the electrical response of input electrical signal, the indexs such as encapsulation situation by testing it.But for the MEMS sensor (MEMS as in cmos circuit top-level metallic-dielectric structure) that some special process makes, electrode cannot be made in MEMS sensing unit both sides simultaneously, so, need in encapsulation process, sealing cap is introduced the detection of electrode realization to MEMS movable structure performance.Such as, the patent US8100012 that John R. Martin and Xin Zhang obtained the authorization in 2012, describe a kind of sealing cap public electrode that uses as the packaged type of another electrode of MEMS sensor, for measuring mass motion in the vertical direction in MEMS structure, overcome this difficult point of electrode that not to be easy to do bottom mass; But, the defect of the method has two: first, the cap sealing electrode that the method is mentioned is public electrode, the different signals of telecommunication cannot be applied respectively to the device of zones of different, secondly, this packaged type still needs traditional electric measurement method to test MEMS, there is potential sky high cost and the risk of device failure.
Summary of the invention
The object of the invention is to overcome above-mentioned the deficiencies in the prior art, there is provided a kind of optics to survey and use the MEMS package structure of cap sealing electrode, that a kind of structure is simple, and MEMS (the comprising sensor and actuator) encapsulating structure of non-contact optical measuring method can be applied to, this encapsulating structure is also compatible with CMOS technology, even can be directly used in the MEMS of encapsulation CMOS top-level metallic-dielectric structure composition.
The present invention is that technical solution problem proposes following encapsulating structure technical scheme.
A kind of optics can be surveyed and use the MEMS package structure of cap sealing electrode, mainly comprise: the sealing cap on MEMS structure, the substrate of carrying MEMS structure, described MEMS structure and substrate, the cavity formed between described sealing cap and substrate, MEMS structure is sealed in described cavity.
Described sealing cap comprises sealing cap matrix, cap sealing electrode, conductive projection and bottom metal layers thereof, and the bottom metal layers of described cap sealing electrode, conductive projection uses same layer sealing cap conductive layer to make; Sealing cap matrix is to particular light ray transparent material, and described sealing cap conductive layer is opaque conductive material or transparent conductive material; Described cap sealing electrode is discrete electrodes or public electrode, is positioned at inside sealing cap, contacts with cavity, for responding to the motion of MEMS structure; When described sealing cap conductive layer is opaque conductive material, in cap sealing electrode, comprise one or more loophole being positioned at the top of MEMS structure.
Described MEMS structure be planar, the structure of moving inside and outside the outer or plane of plane.Described MEMS structure is the structure using the metal in CMOS technology and dielectric layer to make, or the structure for using MEMS technology to make.
Described cap sealing electrode can be discrete electrodes, and the signal of telecommunication of each discrete cap sealing electrode is by the cap sealing electrode contact plate be drawn out to by conductive projection and bottom metal layers thereof on substrate; Sealing ring is positioned at sealing cap matrix outermost edges, forms airtight bonding structure with substrate.
Described cap sealing electrode also can be public electrode, the signal of telecommunication of public cap sealing electrode is by the cap sealing electrode contact plate be drawn out to by conductive projection and bottom metal layers thereof on substrate, conductive projection and bottom metal layers thereof are closed annular, be positioned at the outermost edges of sealing cap matrix, form airtight bonding structure with substrate
When public cap sealing electrode, described substrate is provided with substrate matrix, MEMS structure, MEMS electrode contact plate, cap sealing electrode contact plate and other metals and dielectric layer; MEMS structure is the structure using the metal in CMOS technology and dielectric layer to make, and comprises top-down first medium layer, the first metal layer, second dielectric layer, the second metal level in CMOS technology; MEMS structure comprises the MEMS electrode formed by the second metal level; Be arranged in the second metal level and be provided with MEMS electrode contact plate; The 3rd dielectric layer is provided with between second metal level and the 3rd metal level; Be provided with cap sealing electrode contact plate in a third metal layer, MEMS reference electrode can also be provided with.
When discrete cap sealing electrode, top is provided with the 4th dielectric layer more in a third metal layer, be provided with the conductive projection bonding position of groove type in 4th dielectric layer, groove depth is identical with the thickness of the conductive projection on sealing cap, and conductive projection inserts described conductive projection bonding position.
When not using the public cap sealing electrode of sealing ring, described substrate is provided with substrate matrix, MEMS structure, MEMS electrode contact plate, cap sealing electrode contact plate, MEMS technology structure sheaf, the 5th dielectric layer and the 5th metal level; Described MEMS technology structure sheaf is arranged on substrate matrix; MEMS structure is use the structure of MEMS technology making and comprise necessary electrode structure; MEMS electrode contact plate is drawn by MEMS structure, is provided with the 5th dielectric layer between the 5th metal level and MEMS technology structure sheaf, and cap sealing electrode contact plate is arranged in the 5th metal level, can also be provided with MEMS reference electrode in the 5th metal level.
When not using the discrete cap sealing electrode of sealing ring, the 4th dielectric layer is provided with again above in described 5th metal level, the conductive projection bonding position of groove type is provided with in 4th dielectric layer, groove depth is identical with the thickness of the conductive projection on sealing cap, and conductive projection inserts described conductive projection bonding position.
Described cap sealing electrode is metal or alloy material, wherein comprises the top that one or more loophole is positioned at MEMS structure, and the shape of loophole is the square that diameter is more than or equal to the circle of 1 micron or the length of side and is greater than 1 micron.
The material of described cap sealing electrode can also be the tin indium oxide of transparent and electrically conductive, does not wherein need to make loophole.
Compared with prior art, advantage of the present invention is:
1. the present invention uses cap sealing electrode to respond to or drives in the plane of MEMS structure and plane is moved outward, makes simple, can overcome the difficulty making MEMS structure bottom electrode.
2. the present invention uses transparent sealing cap matrix and transparent top electrodes or the nontransparent top electrodes with loophole, thus the performance of contactless optical means to MEMS structure can be adopted to test, can testing efficiency be improved, reduce the device failure possibility in test.
3. the optics that the present invention proposes can be surveyed and use the MEMS package structure of cap sealing electrode, CMOS technique compatible, even can be directly used in the MEMS of encapsulation CMOS top-level metallic-dielectric structure composition, for CMOS-MEMS single-chip integration is provided convenience.
Accompanying drawing explanation
Fig. 1 is sealing cap structure sectional view of the present invention.
Fig. 2 is substrate described in embodiment 1 (CMOS top-level metallic-dielectric layer is MEMS structure) structure sectional view.
Fig. 3 for substrate described in embodiment 1 and sealing cap (discrete electrodes) key and after device architecture sectional view.
Fig. 4 for substrate described in embodiment 2 (MEMS technology make MEMS structure) and sealing cap (discrete electrodes) key and after device architecture sectional view.
Fig. 5 for substrate described in embodiment 3 (CMOS top-level metallic-dielectric layer is MEMS structure) and sealing cap (public electrode) key and after device architecture sectional view.
Fig. 6 for substrate described in embodiment 4 (MEMS technology make MEMS structure) and sealing cap (public electrode) key and after device architecture sectional view.
Detailed description of the invention
Describe the present invention below in conjunction with embodiment, but enforcement of the present invention is never confined to following embodiment.
As seen in figures 3-6, described optics can be surveyed and use the MEMS package structure of cap sealing electrode, mainly comprises: (1) MEMS structure 8; (2) substrate 2 of MEMS structure 8 is carried; (3) sealing cap 1 on described MEMS structure 8 and substrate 2; MEMS structure 8 is sealed in the cavity 20 that formed between sealing cap 1 and substrate 2 by sealing cap 1.
embodiment 1
As shown in Figure 1, described sealing cap 1 is made up of sealing cap matrix 3, cap sealing electrode 4, conductive projection 6 and bottom metal layers 19 thereof, sealing ring 7.Wherein, sealing cap matrix 3 is to particular light ray transparent material, can be glass, silica, aluminium oxide, silicon nitride, zinc sulphide, zinc selenide, germanium, sapphire or transparent polymer material; The bottom metal layers 19 of cap sealing electrode 4, conductive projection 6 and sealing ring 7 use same layer sealing cap conductive layer 23 to make, described sealing cap conductive layer 23 can be the conductive materials such as opaque metal, alloy, doped silicon, polysilicon, germanium, also can be transparent tin indium oxide conductive material.In this embodiment, cap sealing electrode 4 is discrete electrodes, be positioned at inside sealing cap 1, contact with cavity 20, for responding to the motion of MEMS structure 8, when described sealing cap conductive layer 23 is opaque conductive material, one or more loophole 5 being positioned at the top of MEMS structure 8 is comprised in cap sealing electrode 4, the shape of described loophole 5 is the square that diameter is more than or equal to the circle of 1 micron or the length of side and is greater than 1 micron, when described sealing cap conductive layer 23 is transparent conductive material, without the need to comprising loophole 5 in cap sealing electrode 4; Conductive projection 6 is obtained by the conductive material such as metal, solder, its thickness is identical with the thickness of the 4th dielectric layer 15 on substrate 2, and the signal of telecommunication of each discrete cap sealing electrode 4 is by the cap sealing electrode contact plate 25 be drawn out to by conductive projection 6 and bottom metal layers 19 thereof on substrate 2; Sealing ring 7 is positioned at the outermost edges of sealing cap matrix 3, forms airtight bonding structure with substrate 2.
As shown in Figure 2, described substrate 2 is provided with substrate matrix 17, MEMS structure 8, MEMS electrode contact plate 18, cap sealing electrode contact plate 25 and other metals and dielectric layer.Wherein substrate matrix 17 can be silicon or silicon-on-insulator SOI; MEMS structure 8 is the structure using the metal in CMOS technology and dielectric layer to make, comprise the first medium layer 9 in CMOS technology, the first metal layer 10, second dielectric layer 11, second metal level 12, even more metal-dielertric combination, metal material is aluminium or its alloy, dielectric material is silica or silicon nitride, and the MEMS structure 8 that described metal and dielectric layer are formed can planar, move inside and outside the outer or plane of plane; MEMS structure 8 comprises the MEMS electrode 21 formed by the second metal level 12; Be arranged in the second metal level 12, be provided with MEMS electrode contact plate 18; The 3rd dielectric layer 13 is provided with between second metal level 12 and the 3rd metal level 14; In the 3rd metal level 14, be provided with cap sealing electrode contact plate 25, MEMS reference electrode 22 can also be provided with; Be provided with the conductive projection bonding position 16 of groove type in 4th dielectric layer 15, groove depth is identical with the thickness of conductive projection 6.
embodiment 2
As shown in Figure 4, described sealing cap 1 structure is identical with embodiment 1.
Described substrate 2 is provided with substrate matrix 17, MEMS structure 8, MEMS electrode contact plate 18, cap sealing electrode contact plate 25, MEMS technology structure sheaf 27, the 4th dielectric layer 15, the 5th dielectric layer 28 and the 5th metal level 29.Wherein substrate matrix 17 can be silicon or silicon-on-insulator SOI; MEMS structure 8 is the structure that uses MEMS technology to make and comprises necessary electrode structure, and described MEMS structure 8 can planar, move inside and outside the outer or plane of plane; MEMS electrode contact plate 18 is drawn by MEMS structure 8, cap sealing electrode contact plate 25 is arranged in the 5th metal level 29, MEMS reference electrode 22 can also be provided with in 5th metal level 29, the 5th dielectric layer 28 is provided with between 5th metal level 29 and MEMS technology structure sheaf 27, in 5th metal level 29, top is provided with the 4th dielectric layer 15, be provided with the conductive projection bonding position 16 of groove type in 4th dielectric layer 15, groove depth is identical with the thickness of conductive projection 6; 5th metal level 29 is the alloy of metallic gold, aluminium, tungsten, titanium, copper or above-mentioned material, 4th dielectric layer 15, the 5th dielectric layer 28 are for being silica or silicon nitride, and MEMS technology structure sheaf 27 is polysilicon, non-crystalline silicon, silicon nitride, silica, metallic nickel, copper or metal alloy compositions.
embodiment 3
As shown in Figure 5, described sealing cap 1 comprises sealing cap matrix 3, cap sealing electrode 4, conductive projection 6 and bottom metal layers 19 thereof.Wherein, sealing cap matrix 3 can be glass, silica, aluminium oxide, silicon nitride, zinc sulphide, zinc selenide, germanium, sapphire or transparent polymer material; The bottom metal layers 19 of cap sealing electrode 4 and conductive projection 6 uses same layer sealing cap conductive layer 23 to make, described sealing cap conductive layer 23 can be the conductive materials such as opaque metal, alloy, doped silicon, polysilicon, germanium, also can be transparent tin indium oxide conductive material.In this embodiment, cap sealing electrode 4 is public electrode, be positioned at inside sealing cap 1, contact with cavity 20, for responding to the motion of MEMS structure 8, when described sealing cap conductive layer 23 is opaque conductive material, one or more loophole 5 being positioned at the top of MEMS structure 8 is comprised in cap sealing electrode 4, the shape of described loophole 5 is the square that diameter is more than or equal to the circle of 1 micron or the length of side and is greater than 1 micron, when described sealing cap conductive layer 23 is transparent conductive material, without the need to comprising loophole 5 in cap sealing electrode 4; Conductive projection 6 is obtained by the conductive material such as metal, solder, the signal of telecommunication of public cap sealing electrode 4 is by the cap sealing electrode contact plate 25 be drawn out to by conductive projection 6 and bottom metal layers 19 thereof on substrate 2, conductive projection 6 and bottom metal layers 19 thereof are closed annular, be positioned at the outermost edges of sealing cap matrix 3, form airtight bonding structure with substrate 2, have the function of sealing ring 7 described in embodiment 1 and embodiment 2 concurrently.
Described substrate 2 is provided with substrate matrix 17, MEMS structure 8, MEMS electrode contact plate 18, cap sealing electrode contact plate 25 and other metals and dielectric layer.Wherein substrate matrix 17 can be silicon or silicon-on-insulator SOI; MEMS structure 8 is the structure using the metal in CMOS technology and dielectric layer to make, comprise the first medium layer 9 in CMOS technology, the first metal layer 10, second dielectric layer 11, second metal level 12, even more metal-dielertric combination, metal material is aluminium or its alloy, dielectric material is silica or silicon nitride, and the MEMS structure 8 that described metal and dielectric layer are formed can planar, move inside and outside the outer or plane of plane; MEMS structure 8 comprises the MEMS electrode 21 formed by the second metal level 12; Be arranged in the second metal level 12, be provided with MEMS electrode contact plate 18; The 3rd dielectric layer 13 is provided with between second metal level 12 and the 3rd metal level 14; In the 3rd metal level 14, be provided with cap sealing electrode contact plate 25, MEMS reference electrode 22 can also be provided with.
embodiment 4
As shown in Figure 6, described sealing cap 1 structure is identical with embodiment 3.
Described substrate 2 is provided with substrate matrix 17, MEMS structure 8, MEMS electrode contact plate 18, cap sealing electrode contact plate 25, MEMS technology structure sheaf 27, the 5th dielectric layer 28 and the 5th metal level 29.Wherein substrate matrix 17 can be silicon or silicon-on-insulator SOI; MEMS structure 8 is the structure that uses MEMS technology to make and comprises necessary electrode structure, and described MEMS structure 8 can planar, move inside and outside the outer or plane of plane; MEMS electrode contact plate 18 is drawn by MEMS structure 8, cap sealing electrode contact plate 25 is arranged in the 5th metal level 29, can also be provided with in 5th metal level 29 between MEMS reference electrode the 22, five metal level 29 and MEMS technology structure sheaf 27 and be provided with the 5th dielectric layer 28; 5th metal level 29 is the alloy of metallic gold, aluminium, tungsten, titanium, copper or above-mentioned material, 4th dielectric layer 15, the 5th dielectric layer 28 are for being silica or silicon nitride, and MEMS technology structure sheaf 27 is polysilicon, non-crystalline silicon, silicon nitride, silica, metallic nickel, copper or metal alloy compositions.
Claims (10)
1. an optics can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that, comprise: the sealing cap (1) on MEMS structure (8), the substrate (2) carrying MEMS structure (8), described MEMS structure (8) and substrate (2), the cavity (20) formed between described sealing cap (1) and substrate (2), MEMS structure (8) is sealed in described cavity (20); Described sealing cap (1) comprises sealing cap matrix (3), cap sealing electrode (4), conductive projection (6) and bottom metal layers (19) thereof, and the bottom metal layers (19) of described cap sealing electrode (4), conductive projection (6) uses same layer sealing cap conductive layer (23) to make; Described sealing cap matrix (3) is to particular light ray transparent material, and described sealing cap conductive layer (23) is opaque conductive material or transparent conductive material; Described cap sealing electrode (4) is discrete electrodes or public electrode, being positioned at sealing cap (1) inner side, contacting, for responding to the motion of MEMS structure (8) with cavity (20); When described sealing cap conductive layer (23) is for opaque conductive material, in cap sealing electrode (4), comprise one or more loophole (5) being positioned at the top of MEMS structure (8).
2. a kind of optics according to claim 1 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: described MEMS structure (8) be planar, the structure of moving inside and outside the outer or plane of plane.
3. a kind of optics according to claim 1 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: described MEMS structure (8) is the structure using the metal in CMOS technology and dielectric layer to make, or the structure for using MEMS technology to make.
4. a kind of optics according to claim 2 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: described substrate (2) is provided with substrate matrix (17), MEMS structure (8), MEMS electrode contact plate (18), cap sealing electrode contact plate (25); MEMS structure (8) is the structure using the metal in CMOS technology and dielectric layer to make, and comprises top-down first medium layer (9), the first metal layer (10), second dielectric layer (11), the second metal level (12) in CMOS technology; MEMS structure (8) comprises the MEMS electrode (21) formed by the second metal level (12); Be arranged in the second metal level (12) and be provided with MEMS electrode contact plate (18); The 3rd dielectric layer (13) is provided with between second metal level (12) and the 3rd metal level (14); In the 3rd metal level (14), be provided with cap sealing electrode contact plate (25), MEMS reference electrode (22) can also be provided with; The signal of telecommunication of public cap sealing electrode (4) is by the cap sealing electrode contact plate (25) be drawn out to by conductive projection (6) and bottom metal layers (19) thereof on substrate (2), conductive projection (6) and bottom metal layers (19) thereof are closed annular, be positioned at the outermost edges of sealing cap matrix (3), form airtight bonding structure with substrate (2).
5. a kind of optics according to claim 4 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: in the 3rd metal level (14), top is provided with the 4th dielectric layer (15), the conductive projection bonding position (16) of groove type is provided with in 4th dielectric layer (15), groove depth is identical with the thickness of the conductive projection (6) on sealing cap (1), and conductive projection (6) inserts described conductive projection bonding position (16); The signal of telecommunication of each discrete cap sealing electrode (4) is by the cap sealing electrode contact plate (25) be drawn out to by conductive projection (6) and bottom metal layers (19) thereof on substrate (2); Sealing ring (7) is positioned at sealing cap matrix (3) outermost edges, forms airtight bonding structure with substrate (2).
6. a kind of optics according to claim 2 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: described substrate (2) is provided with substrate matrix (17), MEMS structure (8), MEMS electrode contact plate (18), cap sealing electrode contact plate (25), MEMS technology structure sheaf (27), the 5th dielectric layer (28) and the 5th metal level (29); Described MEMS technology structure sheaf (27) is arranged on substrate matrix (17); MEMS structure (8) is use the structure of MEMS technology making and comprise necessary electrode structure; MEMS electrode contact plate (18) is drawn by MEMS structure (8), the 5th dielectric layer (28) is provided with between 5th metal level (29) and MEMS technology structure sheaf (27), cap sealing electrode contact plate (25) is arranged in the 5th metal level (29), can also be provided with MEMS reference electrode (22) in the 5th metal level (29); The signal of telecommunication of public cap sealing electrode (4) is by the cap sealing electrode contact plate (25) be drawn out to by conductive projection (6) and bottom metal layers (19) thereof on substrate (2), conductive projection (6) and bottom metal layers (19) thereof are closed annular, be positioned at the outermost edges of sealing cap matrix (3), form airtight bonding structure with substrate (2).
7. a kind of optics according to claim 6 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: in described 5th metal level (29), top is provided with the 4th dielectric layer (15), the conductive projection bonding position (16) of groove type is provided with in 4th dielectric layer (15), groove depth is identical with the thickness of the conductive projection (6) on sealing cap (1), and conductive projection (6) inserts described conductive projection bonding position (16); The signal of telecommunication of each discrete cap sealing electrode (4) is by the cap sealing electrode contact plate (25) be drawn out to by conductive projection (6) and bottom metal layers (19) thereof on substrate (2); Sealing ring (7) is positioned at sealing cap matrix (3) outermost edges, forms airtight bonding structure with substrate (2).
8. a kind of optics according to claim 1 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: described sealing cap matrix (3) material is glass, silica, aluminium oxide, silicon nitride, zinc sulphide, zinc selenide, germanium, sapphire or transparent polymer material.
9. a kind of optics according to claim 1 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: the tin indium oxide that described cap sealing electrode (4) is transparent and electrically conductive.
10. a kind of optics according to claim 1 can be surveyed and use the MEMS package structure of cap sealing electrode, it is characterized in that: the shape of described loophole (5) is the square that diameter is more than or equal to the circle of 1 micron or the length of side and is greater than 1 micron.
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| CN201210495460.7A CN102976262B (en) | 2012-11-28 | 2012-11-28 | Optically-measurable MEMS (Micro-electromechanical System) encapsulating structure provided with sealing cap electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101850942A (en) * | 2009-03-31 | 2010-10-06 | 日月光半导体制造股份有限公司 | Micro electromechanical system packaging structure |
| CN102786026A (en) * | 2012-08-23 | 2012-11-21 | 江苏物联网研究发展中心 | Film seal cap packaging structure for MEMS (micro electro mechanical system) optical device and manufacturing method of film seal cap packaging structure |
| CN202988704U (en) * | 2012-11-28 | 2013-06-12 | 江苏物联网研究发展中心 | Micro-electro-mechanical system (MEMS) packaging structure capable of being measured optically and utilizing sealing cap electrode |
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| WO2008086530A2 (en) * | 2007-01-11 | 2008-07-17 | Analog Devices, Inc. | Mems sensor with cap electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101850942A (en) * | 2009-03-31 | 2010-10-06 | 日月光半导体制造股份有限公司 | Micro electromechanical system packaging structure |
| CN102786026A (en) * | 2012-08-23 | 2012-11-21 | 江苏物联网研究发展中心 | Film seal cap packaging structure for MEMS (micro electro mechanical system) optical device and manufacturing method of film seal cap packaging structure |
| CN202988704U (en) * | 2012-11-28 | 2013-06-12 | 江苏物联网研究发展中心 | Micro-electro-mechanical system (MEMS) packaging structure capable of being measured optically and utilizing sealing cap electrode |
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Effective date of registration: 20210113 Address after: 610200 in the concentration area of Chengdu Xingu Industrial Park, Dongsheng Street, Shuangliu District, Chengdu City, Sichuan Province Patentee after: China core Microelectronics Technology Chengdu Co.,Ltd. Address before: 100029 room 328, building 15, 3 Beitucheng West Road, Chaoyang District, Beijing Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |
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