CN102962762A - Bearing disk component for wafer grinding - Google Patents

Bearing disk component for wafer grinding Download PDF

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Publication number
CN102962762A
CN102962762A CN 201210524668 CN201210524668A CN102962762A CN 102962762 A CN102962762 A CN 102962762A CN 201210524668 CN201210524668 CN 201210524668 CN 201210524668 A CN201210524668 A CN 201210524668A CN 102962762 A CN102962762 A CN 102962762A
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bearing
surface
platform
wafer
vacuum
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CN 201210524668
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Chinese (zh)
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张惠姗
洪嘉临
彭淯慈
赖宥丞
简翊丞
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日月光半导体制造股份有限公司
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Abstract

The invention discloses a bearing disk component for wafer grinding. The bearing disk component comprises a bearing system and a peripheral suction system, wherein the bearing system comprises a bearing platform and at least one accommodating space; the bearing platform is provided with an upper surface; the supper surface is a plane and contacts with one surface of a wafer; the at least one accommodating space is concavely arranged at the middle part of the bearing platform and is provided with a bottom part; height difference exists between the bottom part and the upper surface of the bearing platform and is more than the maximal height of a plurality of convex blocks on the surface of the wafer; the peripheral suction system comprises at least one vacuum through hole; the at least one vacuum through hole is formed at the periphery of the bearing platform and is connected with the upper surface of the bearing platform; and the vacuum through hole is used for providing vacuum to suck the surface of the wafer.

Description

晶圆研磨用承载盘组件 Polishing the wafer carrier plate assembly

技术领域 FIELD

[0001] 本发明是有关于一种晶圆研磨用承载盘组件,特别是有关于一种可取代研磨胶带且可重复使用的晶圆研磨用承载盘组件。 [0001] The present invention relates to a wafer polishing carrier plate assembly, more particularly polishing the wafer carrier on an assembly plate unsubstituted grinding tape and reusable.

背景技术 Background technique

[0002] 目前,多层金属化制造过程(multi-level metallization process),这种利用复数层的金属内联线路层以及介电常数较低的介电层(dielectrics)互相交替堆迭来将半导体晶片有源表面上的各种半导体元件彼此串接起来而完成整个堆迭化的回路架构,已被广泛的应用在超大型积体电路(very large scaleintegration,VLSI)的晶圆制造过程上。 [0002] Currently, the manufacturing process of a multilayer metallization (multi-level metallization process), the use of such a plurality of layers of metal wiring layer with a lower dielectric constant and a dielectric layer (Dielectrics) alternating with each other to stack the semiconductor various semiconductor elements on the active surface of the wafer and connected in series to each other to complete the circuit of the stacked structure, has been widely used in the wafer fabrication process of VLSI (very large scaleintegration, VLSI) a.

[0003] 然而,在一般的晶圆制作过程中,这些金属线路及半导体元件会使积体电路的表面呈现高低不平的陆峭形貌(severe topography),增加后续在进行沉积或图案转移(pattern transfer)制作方法时,产生有突悬(overhang)、孔洞(void)或者聚焦不易以及蚀刻困难等缺点。 [0003] However, in a typical wafer production process, the surface of these metal lines and the semiconductor integrated circuit device will exhibit a steep topography of uneven land (severe topography), increases during the deposition or subsequent pattern transfer (pattern when transfer) production methods, produce overhang (overhang), shortcomings holes (void), and etching or difficulty focusing difficult. 所以,在进入深次微米的半导体制作方法之后,便需要使用平坦化效果较佳的化学机械研磨(Chemical mechanicalpolishing, CMP)工艺来研磨以平坦化半导体晶片的有源表面,以确保后续制作过程的良率。 So, after entering the deep sub-micron semiconductor fabrication method, they require the use of flattening effects better chemical mechanical polishing (Chemical mechanicalpolishing, CMP) process to planarize the surface ground to an active semiconductor wafer to ensure that the subsequent production process yield. 另一方面,为了符合半导体封装构造的小型化趋势,半导体晶片也需尽可能的减少厚度,也就是另外也需要对半导体晶片的一面(例如:无源表面)进行某一程度的研磨薄化。 On the other hand, in order to meet the trend of miniaturization of the semiconductor package structure, the semiconductor wafer is also required to minimize the thickness of the side is also a need for a semiconductor wafer (for example: a passive surface) for a certain degree of thinning of the polishing.

[0004] 在晶圆背面研磨过程中,晶圆的一表面,例如:有源表面,通常朝下固定在一承载盘上,晶圆的背面则朝上并以一研磨工具进行研磨薄化。 [0004] In the wafer back grinding process, a surface of the wafer, for example: an active surface, a generally downward is fixed to the carrier plate, the back surface of the wafer is thinned upwards and ground to a grinding tool. 此时,晶圆的有源表面上已预先形成有凸块(bumps),为了保护晶圆有源表面上的凸块,故晶圆上凸块的包覆性是重要条件之一。 In this case, the active surface of the wafer has been previously formed bumps (bumps), to protect the bumps on the active surface of the wafer, the wafer so that the bump covering property is one of the important conditions. 目前一般现有技术在晶圆研磨前,是通过使用晶圆贴膜胶带包覆凸块以保护凸块及晶圆有源表面,并且分别针对不同的晶圆规格以选择适用的晶圆贴膜胶带。 The general prior art in the wafer before polishing, the wafer through the use of film coated tape to protect the bumps and the bumps active surface of the wafer, and the wafer separately for different specifications applicable to select a wafer film tape. 然而,随着晶圆的厚度越来越薄,凸块的包覆效果也日益越发重要,故设计适当的晶圆贴膜胶带厚度往往会决定均匀化或薄化晶圆时,能否避免晶圆产生破裂或碎裂的问题。 However, as the thickness of the wafer is thinner, the coating effect bumps increasingly more important, so appropriately designed wafer film thickness of the tape often determine when homogenization or thin wafers, the wafer can be avoided a problem of cracking or chipping. 此外,晶圆贴膜胶带因无法回收使用,故也会提升耗材成本并造成工艺步骤的增加。 In addition, due to wafer film tape can not be recycled, it will also enhance the cost of supplies and cause an increase in process steps.

[0005] 故,有必要提供一种可取代研磨胶带且可重复使用的晶圆研磨承载盘组件,以解决现有技术所存在的问题。 [0005] Therefore, it is necessary to provide a grinding tape and may be substituted with reusable polishing the wafer carrier plate assembly, in order to solve the problems of the prior art.

发明内容 SUMMARY

[0006] 有鉴于此,本发明提供一种晶圆研磨用承载盘组件,以解决现有技术所存在的研磨晶圆背面时凸块包覆安全性的问题。 [0006] Accordingly, the present invention provides a wafer polishing carrier plate assembly to address safety bump during polishing the wafer backside coating is present prior art.

[0007] 本发明的主要目的在于提供一种晶圆研磨用承载盘组件,其可以取代现有的晶圆贴膜胶带,并且解决胶带的厚度不易选择且研磨时容易造成晶圆破碎的问题。 [0007] The main object of the present invention is to provide a wafer polishing carrier plate assembly which can replace conventional film tape wafer, and the wafer is likely to cause problem when the thickness of the tape broken easily select and ground.

[0008] 本发明的次要目的在于提供一种晶圆研磨用承载盘组件,其可以有重复使用的效果,可节省现有技术使用晶圆贴膜胶带的耗材成本及额外的工艺步骤。 [0008] Secondary object of the present invention is to provide a wafer polishing carrier plate assembly, which can have the effect of repeated use, the prior art material cost can be saved using the wafer film and adhesive tape additional process step.

[0009] 为达成本发明的前述目的,本发明一实施例提供一种晶圆研磨用承载盘组件,其中所述承载盘组件包含:一承载系统以及一周边吸持系统,所述承载系统包含:一承载台以及至少一个容置空间。 [0009] To achieve the above object of the present invention, an embodiment of the present invention provides a wafer polishing carrier plate assembly, wherein said carrier plate assembly comprising: a carrier system, and a system of suctioning outside the carrier system comprises : a carrier station and at least one receiving space. 所述承载台具有一上表面,所述上表面为一平面,与一晶圆的一表面相接触。 The carrier table having an upper surface, said upper surface is a plane, in contact with a surface of a wafer. 所述容置空间凹设于所述承载台的中间部分,其中所述容置空间具有一底部与所述承载台的上表面具有一高度差,并所述高度差大于所述晶圆的表面上的多个凸块的最大高度。 The receiving space recessed in a middle portion of the carrier platform, wherein the accommodating space having a bottom and upper surface of the load platform having a height difference, and the difference is greater than a height of the surface of the wafer the maximum height of the plurality of bumps on. 所述周边吸持系统包含:至少一真空通孔,设置于所述承载平台的周边,所述真空通孔与所述承载台的上表面相连结,所述真空通孔以提供真空吸持所述晶圆的表面。 Said peripheral chucking system comprising: at least one vacuum through holes provided in the periphery of the carrier platform, the vacuum to the upper surface of the through hole and the mounting platform is connected with an aperture to provide a vacuum through the vacuum chucking said surface of the wafer.

[0010] 与现有技术相比较,本发明的晶圆研磨用承载盘组件,这样不但可取代晶圆贴膜胶带的功能,还可以重复使用,省下晶圆贴膜胶带的成本。 [0010] Compared with the prior art, polishing of the wafer carrier plate assembly of the present invention, so that not only can replace the function of the wafer foil tape may also be reused, the cost savings of wafer film tape.

[0011] 为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式,作详细说明如下: [0011] In order to make the above-described present invention can be more fully understood, the following preferred non-limiting embodiment, and with the accompanying drawings, described in detail below:

附图说明[0012] 图IA是本发明一实施例晶圆研磨用承载盘组件的剖面图。 BRIEF DESCRIPTION [0012] FIG IA is a cross-sectional view of the wafer polishing assembly tray of an embodiment of the present invention.

[0013] 图IB是本发明一实施例晶圆研磨用承载盘组件的俯视图。 [0013] FIG IB is a top view of the wafer polishing a tray assembly embodiment of the present invention.

[0014] 图2A是本发明另一实施例晶圆研磨用承载盘组件的剖面图。 [0014] FIG. 2A is a cross-sectional view of the wafer polishing carrier plate assembly according to another embodiment of the present invention.

[0015] 图2B是本发明另一实施例晶圆研磨用承载盘组件的俯视图。 [0015] FIG. 2B is a top view of the wafer polishing carrier plate assembly according to another embodiment of the present invention.

[0016] 图3A是本发明又一实施例晶圆研磨用承载盘组件的剖面图。 [0016] FIG 3A is a sectional view of still another embodiment of the present invention is polishing the wafer carrier plate assembly.

[0017] 图3B是本发明又一实施例晶圆研磨用承载盘组件的俯视图。 [0017] FIG. 3B is a plan view of still another embodiment of the present invention is polishing the wafer carrier plate assembly.

[0018] 图4A-4B是本发明一实施使用方法的步骤。 [0018] Figures 4A-4B is a step of a method of using the embodiment of the present invention.

[0019] 图5A-5B是本发明另一实施使用方法的步骤。 [0019] Figures 5A-5B is a step of another embodiment of the method of the present invention is used.

[0020] 图6A-6B是本发明又一实施使用方法的步骤。 [0020] Figures 6A-6B is a step of a further embodiment of the method of the present invention is used.

具体实施方式 detailed description

[0021] 以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。 DESCRIPTION [0021] The following embodiments with reference to the attached drawings, for the particular embodiment used to illustrate embodiments of the present invention. 再者,本发明所提到的方向用语,例如「上」、「下」、「顶」、「底」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」、「周围」、「中央」、「水准」、「横向」、「垂直」、「纵向」、「轴向」、「径向」、「最上层」或「最下层」等,仅是参考附加图式的方向。 Further, the present invention mentioned directional terms, such as "upper", "lower", "top", "bottom", "front", "rear", "left", "right", "inner", " outer "," side "," around "," center "," standard "," lateral "," vertical "," longitudinal "," axial "," radial "," uppermost "or" lowermost " etc., is used with reference to the attached figures in direction. 因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。 Thus, the use of directional terms are used to describe and understand the present invention, not to limit the present invention.

[0022] 请参照图1A、1B所示,本发明一实施例的晶圆研磨用承载盘组件主要包含一承载系统I及一周边吸持系统2。 [0022] Referring to FIGS. 1A, 1B, the wafer polishing assembly tray of an embodiment of the present invention mainly comprises a bearing system and a peripheral I 2 sorption system. 所述承载系统I包含:一承载台10及至少一个容置空间11。 I the carrier system comprising: a supporting table 10 and at least one receiving space 11. 所述承载台10具有一上表面101,所述上表面101为一平面,与一晶圆30 (不于图4A)的一表面相接触。 The carrier table 10 has an upper surface 101, 101 of the upper surface is a plane, (not in FIG. 4A) in contact with a surface of a wafer 30. 所述容置空间11凹设于所述承载台10的中间部分,根据本发明一实施方式,所述容置空间具有一底部111,所述容置空间11可容置所述晶圆30的一有源表面(下表面)上的多个凸块31 (示于图4A),其中所述容置空间11的底部111与所述承载台10的上表面101具有一高度差,所述高度差大于所述晶圆30的表面上的多个凸块31的最大高度,例如高度差为所述多个凸块31的最大高度的I. 05至I. 5倍。 The receiving space 11 is recessed in the intermediate portion of the carrier station 10, according to an embodiment of the present invention, the accommodating space 111 having a bottom portion, the accommodating space 11 of the wafer 30 may be housed in a plurality of bumps 31 on an active surface (lower surface) (shown in FIG. 4A), wherein the bottom of the accommodating space 11 having a height difference of 111 101 with the upper surface of the table 10 of the carrier, the height the difference is greater than the maximum height of the plurality of wafer bumps 31 on the surface 30, for example, a height difference of the plurality of projections 31 of the maximum height of the I. 05 to I. 5 times. 所述周边吸持系统2包含:至少一真空通孔21,设置于所述承载台10的周边,以提供真空吸持所述晶圆30(示于图4A)的有源表面的一环形周边位置。 2 the peripheral chucking system comprising: at least one vacuum through holes 21, disposed on the periphery of the carrier table 10 to provide (shown in FIG. 4A) of the active surface of the vacuum suction holding of the wafer 30 is a peripheral annular position.

[0023] 请参照图1A、1B所示,所述承载系统I另包含一支撑主轴12,所述支撑主轴12,设置于所述承载台10的底部,主要用来固持所述承载台10,在本发明中,其可以为一可旋转的支撑主轴或一固定式主轴,也可以不设置,若其为一可旋转的支撑主轴,可用来固持并旋转所述承载台10,进而旋转所述晶圆30。 [0023] Referring to FIGS. 1A, 1B shown, the bearing system further comprises an I supports the spindle 12, the support shaft 12, is provided at the bottom of the carrier table 10, the main station for holding the carrier 10, in the present invention, which may be a rotatable shaft or a fixed support spindle, may not be provided, if it is a rotatable support shaft, and can be used to rotate the carrier holding table 10, thereby rotating the wafer 30.

[0024] 在本实施例中,所述承载系统I另包含:一填充液供应管13及一填充流体14,所述填充液供应管13设置在所述承载台10内,与所述容置空间11相连通。 [0024] In the present embodiment, the carrier system I further comprising: a filling liquid supply pipe 13 and a fluid 14 is filled, the filling liquid supply pipe 13 is disposed within the carrier table 10, and the accommodating space 11 communicates. 所述填充流体14通过所述填充液供应管13进入所述容置空间11可与所述晶圆30紧密接触或可于所述晶圆30薄化后排出所述容置空间11。 14 through the fill fluid filling the liquid supply pipe 13 enters the receiving space 11 may be the close contact with the wafer 30 or the wafer 30 may be thinned to the accommodating space 11 is discharged. 所述填充流体14可为去离子水或任何不与所述晶圆30的一有源表面上的多个凸块31起化学反应的填充流体。 The filler 14 may be any of a plurality of bumps 31 is not filled with fluid from a chemical reaction of the fluid is deionized water or with an active surface on the wafer 30. 所述承载系统I另包含:一阀体15,设置在所述填充液供应管13上的适当位置,以防止所述容置空间11内的填充流体14回流。 I the carrier system further comprising: a valve body 15, is provided in place of the filling liquid supply pipe 13 to prevent the fluid filled within the accommodating space 1114 at reflux.

[0025] 请再参照图IB所示,所述周边吸持系统2的真空通孔21可为一个连续环状通孔、数个环状排列的柱状通孔或数个放射状排列的矩形通孔中的一种。 [0025] Still referring to FIG the IB, the periphery of the vacuum suction through holes 21 of the support system 2 can be a rectangular through hole continuous annular through hole, a plurality of cylindrical through-holes arranged in a ring or several radially arranged in kind. 并且所述周边吸持系统2的真空通孔21为中空管道,但其内部也可选择嵌入多孔隙陶瓷材料的嵌塞件,其多孔陶瓷材料的体积密度约为O. 80到O. 90公克每立方公分(g/cm3)之间,其孔体积约为O. 50到O. 60立方公分每公克(cm3/g)之间,其孔径尺寸约为30到50纳米(nm)之间,及其抗压强度高达80兆帕(MPa),但并不限于此。 And holding the periphery of the vacuum suction through holes 21 of the system 2 is a hollow pipe, but its internal Alternatively caulking member insert porous ceramic material, a porous ceramic material whose bulk density of from about O. 80 O. 90 g to between each cubic centimeter (g / cm3), a pore volume between about O. 50 O. 60 cc per gram between (cm3 / g), pore size which is about 30 to 50 nanometers (nm), its compressive strength up to 80 MPa (MPa), but is not limited to this. 所述多孔陶瓷材料的嵌塞件一端在受真空作用时,真空吸力可通过所述多孔陶瓷材料的嵌塞件内部的微孔到达其另一端,但所述多孔陶瓷材料的嵌塞件本身不会产生任何体积上的压缩变形。 Caulking material, the porous ceramic member at one end by the action of vacuum, vacuum suction can reach the other end of the caulking member through the micropores inside the porous ceramic material, but the caulking member itself is not porous ceramic material compressive deformation is generated on any volume.

[0026] 请参照图2A、2B所示,本发明另一实施例的晶圆研磨用承载盘组件主要包含一承载系统I及一周边吸持系统2。 [0026] Referring to Figure 2A, 2B, the wafer polishing carrier plate assembly according to another embodiment of the present invention mainly comprises a bearing system and a peripheral I 2 sorption system. 所述承载系统I包含:一承载台10及至少一个容置空间11。 I the carrier system comprising: a supporting table 10 and at least one receiving space 11. 所述承载台10具有一上表面101,所述上表面101为一平面,与一晶圆30 (不于图4A)的一表面相接触。 The carrier table 10 has an upper surface 101, 101 of the upper surface is a plane, (not in FIG. 4A) in contact with a surface of a wafer 30. 所述容置空间11凹设于所述承载台10的中间部分,根据本发明一实施方式,所述容置空间具有一底部111,所述容置空间11可容置所述晶圆30的一有源表面(下表面)上的多个凸块31 (示于图4A),其中所述容置空间11的底部111与所述承载台10的上表面101具有一高度差,所述高度差大于所述晶圆30的表面上的多个凸块31的最大高度,例如高度差为所述多个凸块31的最大高度的I. 05至I. 5倍。 The receiving space 11 is recessed in the intermediate portion of the carrier station 10, according to an embodiment of the present invention, the accommodating space 111 having a bottom portion, the accommodating space 11 of the wafer 30 may be housed in a plurality of bumps 31 on an active surface (lower surface) (shown in FIG. 4A), wherein the bottom of the accommodating space 11 having a height difference of 111 101 with the upper surface of the table 10 of the carrier, the height the difference is greater than the maximum height of the plurality of wafer bumps 31 on the surface 30, for example, a height difference of the plurality of projections 31 of the maximum height of the I. 05 to I. 5 times. 所述周边吸持系统2包含:至少一真空通孔21,设置于所述承载台10的周边,以提供真空吸持所述晶圆30(示于图4A)的有源表面的一环形周边位置。 2 the peripheral chucking system comprising: at least one vacuum through holes 21, disposed on the periphery of the carrier table 10 to provide (shown in FIG. 4A) of the active surface of the vacuum suction holding of the wafer 30 is a peripheral annular position.

[0027] 请再参照图2A、2B所示,所述承载系统I也另包含一支撑主轴12,所述支撑主轴12,设置于所述承载台10的底部,主要用来固持所述承载台10,在本发明中,其可以为一可旋转的支撑主轴或一固定式主轴,也可以不设置,若其为一可旋转的支撑主轴,可用来固持并旋转所述承载台10,进而旋转所述晶圆30。 [0027] Referring again to Figures 2A, 2B shown, the carrier further comprises a system I also supports the spindle 12, the support shaft 12, is provided at the bottom of the carrier table 10, the main stage for holding the carrier 10, in the present invention, which may be a rotatably supporting the spindle or a fixed spindle, may not be provided, if it is a rotatable support shaft, can be used to holding and rotating the carrier table 10, and further rotation the wafer 30.

[0028] 在本实施例中,所述承载系统I另包含:一多孔隙填充承载材料16以及一抽真空管道17。 [0028] In the present embodiment, the carrier system I further comprising: filling a porous carrier material 16 and evacuation conduits 17 a. 所述多孔隙填充承载材料16容置在所述容置空间11内。 Filling the porous carrier material 16 accommodated within the accommodating space 11. 所述抽真空管道17对所述多孔隙填充承载材料16抽真空,使已被抽真空的所述多孔隙填充承载材料16' (示于图5B)缩减体积及提高致密度,以抓紧所述晶圆30 (示于图5A)的凸块31 (示于图5A),根据本发明一实施例,所述承载台10位于所述容置空间11的底部111部分与所述承载台10的周边部分可独立分开运作(图中未标示),当所述多孔隙填充承载材料16缩减体积时,所述多孔隙填充承载材料16的上表面与所述承载台10的上表面101会存在一个落差,此时,所述承载台10的底部可使其上升,以使得所述多孔隙填充承载材料16的上表面与所述承载台10的上表面101呈一共平面。 The suction vacuum pore filling path 17 carrying the material 16 more evacuated to fill the porous carrier material has been evacuated 16 '(shown in FIG. 5B) and the volume was reduced to improve the density, to grasp the wafer 30 (shown in FIG. 5A) of the bumps 31 (shown in FIG. 5A), in accordance with an embodiment of the present invention, the carrier table 10 is located at the bottom portion 111 of the accommodating space 11 to the carrier station 10 the peripheral portion may be independently operated separately (not shown in the figure), when the porous filler material 16 to reduce the volume of the carrier, said porous carrier on the surface of the filling material 16 and the upper surface 101 of the carrier station 10 will present a drop, this time, the base station of the carrier 10 may be increased so as to cause the upper surface of the porous carrier filled with the carrier material 16 on the surface 10 of the table were a total of 101 plane. 所述多孔隙填充承载材料16可为多孔隙海棉材料、多孔隙橡胶(rubber)材料、多孔隙娃胶(silicon)材料、铁氟龙(teflon)或乳胶(latex)等中的至少一种柔性材料。 The porous carrier material 16 may be filled with porous sponge material, porous rubber (Rubber) material, a porous plastic baby (Silicon) materials, Teflon (a Teflon) or latex (LaTeX) at least one other flexible material. 所述多孔隙填充承载材料16在被抽真空时,因其材质具有可挠曲变形特性,因此其内部微孔将会缩小,导致整体上缩减体积及提高致密度。 The porous carrier material 16 when the filling is evacuated, because of its material characteristics may flexural deformation, so its internal pores will be reduced, resulting in reduction in size and increase overall density.

[0029] 请再参照图2B所示,所述周边吸持系统2的真空通孔21可为一个连续环状通孔、数个环状排列的柱状通孔或数个放射状排列的矩形通孔中的一种。 [0029] Please refer to FIG. 2B, the periphery of the vacuum chucking system 21 of the through-hole 2 can be a continuous annular through hole, a plurality of cylindrical through-holes arranged in a ring or a plurality of rectangular through holes arranged radially in kind. 并且所述周边吸持系统2的真空通孔21为中空管道,但其内部也可选择嵌入多孔隙陶瓷材料的嵌塞件,其多孔陶瓷材料的体积密度约为O. 80到O. 90公克每立方公分(g/cm3)之间,其孔体积约为O. 50到O. 60立方公分每公克(cm3/g)之间,其孔径尺寸约为30到50纳米(nm)之间,及其抗压强度高达80兆帕(MPa),但并不限于此。 And holding the periphery of the vacuum suction through holes 21 of the system 2 is a hollow pipe, but its internal Alternatively caulking member insert porous ceramic material, a porous ceramic material whose bulk density of from about O. 80 O. 90 g to between each cubic centimeter (g / cm3), a pore volume between about O. 50 O. 60 cc per gram between (cm3 / g), pore size which is about 30 to 50 nanometers (nm), its compressive strength up to 80 MPa (MPa), but is not limited to this. 所述多孔陶瓷材料的嵌塞件在受真空作用时,其材料本身不会产生任何体积上的压缩变形。 The caulking member when the porous ceramic material by the action of vacuum, the material itself does not produce any compressive deformation in volume.

[0030] 请参照图3A、3B所示,本发明又一实施例的晶圆研磨用承载盘组件主要包含一承载系统I及一周边吸持系统2。 [0030] Referring to Figures 3A, 3B, a further embodiment of the present invention, polishing of the wafer carrier plate assembly comprises a main embodiment of the bearing system and a peripheral I 2 sorption system. 所述承载系统I包含:一承载台10及至少一个容置空间 I the carrier system comprising: a supporting table 10 and at least one receiving space

11。 11. 所述承载台10具有一上表面101,所述上表面101为一平面,与一晶圆30(不于图4A)的一表面相接触。 The carrier table 10 has an upper surface 101, 101 of the upper surface is a plane, (not in FIG. 4A) in contact with a surface of a wafer 30. 所述容置空间11凹设于所述承载台10的中间部分,其中所述容置空间11具有一底部111与所述承载台10的上表面101具有一高度差,并所述高度差大于所述晶圆30的表面上的多个凸块31 (不于图4A)的最大闻度,可容置所述晶圆30的一有源表面上的多个凸块31。 The receiving space 11 is recessed in the carrier table 10 of the intermediate portion, wherein the accommodating space 11 has a bottom portion 111 and 101 has a height difference between the upper surface of the carrier table 10, and the difference is greater than a height the plurality of projections 31 (not in Fig. 4A) on the audibility of the maximum surface of the wafer 30 can accommodate a plurality of bumps 31 on an active surface of the wafer 30. 所述周边吸持系统2包含:至少一真空通孔21,设置于所述承载台10的周边,以提供真空吸持所述晶圆30(示于图4A)的有源表面的一环形周边位置。 2 the peripheral chucking system comprising: at least one vacuum through holes 21, disposed on the periphery of the carrier table 10 to provide (shown in FIG. 4A) of the active surface of the vacuum suction holding of the wafer 30 is a peripheral annular position. 同前述二实施例,亦可另设一支撑主轴12,其应用及效果于此不再赘述。 With the second embodiment, can support a separate shaft 12, which effect application and is omitted herein.

[0031] 在本实施例中,所述承载系统I另包含:一多孔隙承载格栅18及一抽真空管道17。 [0031] In the present embodiment, the carrier system I further comprising: a porous carrier 18 and a grid 17 of evacuation conduits. 所述多孔隙承载格栅18容置在所述容置空间11内,具有多个空格181可容置所述晶圆30 (示于图6A)的多个凸块31 (示于图6A),其中,所述承载格栅18之间的间距可视所述多个凸块31之间的距离作调整,例如可位于切割道的位置。 The porous carrier grid 18 accommodated in the accommodating space 11, having a plurality of receiving spaces 181 of the wafer 30 (shown in FIG. 6A) of the plurality of projections 31 (shown in FIG. 6A) , wherein the carrier spacing between the grid 18 of the visual distance between the plurality of projections 31 to be adjusted, for example, the position of the cutting path. 所述抽真空管道17对所述多孔隙承载格栅18抽真空,使所述多孔隙承载格栅18吸持所述晶圆30的有源表面上的多个预定晶片切割位置。 The vacuum pumping aperture path 17 bearing the multi-grid 18 is evacuated to the porous carrier holding a plurality of predetermined suction grill 18 on the active surface of the wafer 30. The wafer cutting position. 所述多孔隙承载格栅18的材料为多孔隙陶瓷材料,其多孔陶瓷材料的体积密度约为O. 80到O. 90公克每立方公分(g/cm3)之间,其孔体积约为O. 50到O. 60立方公分每公克(cm3/g)之间,其孔径尺寸约为30到50纳米(nm)之间,及其抗压强度高达80兆帕(MPa),但并不限于此。 The porous carrier material of the grid 18 is porous ceramic material, a porous ceramic material whose bulk density of from about O. 80 O. 90 grams between the cc (g / cm3), a pore volume of about O between 50 to between O. 60 cc per gram (cm3 / g), pore size which is about 30 to 50 nanometers (nm), and compressive strength of up to 80 megapascals (MPa), but are not limited this. 所述多孔隙承载格栅18的一端在受真空作用时,真空吸力可通过所述多孔隙承载格栅18内部的微孔到达其另一端,但所述多孔隙承载格栅18本身不会产生任何体积上的压缩变形。 The porous carrier 18 at one end of the grid by the action of vacuum, vacuum suction can reach the other end thereof through the micropores inside the porous carrier grid 18, but the porous carrier 18 itself does not generate grid any deformation of the compression volume.

[0032] 请再参照图3B所示,所述周边吸持系统2的真空通孔21为一个连续环状通孔、数个环状排列的柱状通孔或数个放射状排列的矩形通孔其中的一种。 [0032] Please refer to FIG. 3B, the periphery of the vacuum chucking system 21 of the through-hole 2 is a continuous annular through hole, a plurality of cylindrical through-holes arranged in a ring or several radially arranged through holes in which a rectangular a. 并且所述周边吸持系统2的真空通孔21为中空管道,但其内部也可选择嵌入多孔隙陶瓷材料的嵌塞件,其多孔陶瓷材料的体积密度约为O. 80到O. 90公克每立方公分(g/cm3)之间,其孔体积约为O. 50到O. 60立方公分每公克(cm3/g)之间,其孔径尺寸约为30到50纳米(nm)之间,及其抗压强度高达80兆帕(MPa),但并不限于此。 And holding the periphery of the vacuum suction through holes 21 of the system 2 is a hollow pipe, but its internal Alternatively caulking member insert porous ceramic material, a porous ceramic material whose bulk density of from about O. 80 O. 90 g to between each cubic centimeter (g / cm3), a pore volume between about O. 50 O. 60 cc per gram between (cm3 / g), pore size which is about 30 to 50 nanometers (nm), its compressive strength up to 80 MPa (MPa), but is not limited to this. 所述多孔陶瓷材料的嵌塞件在受真空作用时,其材料本身不会产生任何体积上的压缩变形。 The caulking member when the porous ceramic material by the action of vacuum, the material itself does not produce any compressive deformation in volume. [0033] 请参照图4A所示的一实施例的使用方法步骤中,所述承载系统I的容置空间11主要是容置多个晶片上的所述多个凸块31,当研磨所述晶圆30之前,先打开利用所述阀体15,使得所述填充流体14通过所述填充液供应管13进入所述容置空间11,当所述容置空间11被填满时,再关上所述阀体15,以免所述填充流体14回流。 [0033] Referring to an embodiment shown in FIG. 4A using the procedure of Example of the method, the carrier system I accommodating space 11 of the main accommodating a plurality of wafers on the plurality of bumps 31, when the milling before the wafer 30, the first opening 15 with the valve element, such that the fluid 14 by filling the filling liquid supply pipe 13 into the receiving space 11, when the accommodating space 11 is filled, and then close the the valve element 15, 14 to prevent the fluid filled reflux. 由于所述填充流体14不会与所述晶圆30表面起任何反应也无存在粘胶,因此晶圆薄化制程结束后不会产生污染晶圆或残胶的问题,且可以包护所述晶圆30的一有源表面上的多个凸块31,使所述多个凸块31不会与所述承载台10的上表面101产生滑动或摩擦而导致碎裂或破裂。 Since the fill fluid 14 does not serve any react with the surface of the wafer 30 and no adhesive is present, so that no problem of adhesive residue or contamination of the wafer after wafer thinning process, the jacketing and may be a plurality of bumps 31 on an active surface of the wafer 30, the plurality of projections 31 without sliding or friction with the upper surface of the table 10 of the carrier 101 results in chipping or cracking. 同时,为了固持住所述承载台10上的所述晶圆30,通过将所述周边吸持系统2的真空通孔21中的空气抽成真空,以吸持所述晶圆30的周围,达到固定及支撑的作用。 Meanwhile, in order to live the carrier holding the wafer 30 on the stage 10, by holding the periphery of the vacuum suction through-holes 2 in the air system 21 is evacuated to around said suction holding the wafer 30, to and the role of the fixed support. 所述周边吸持系统2的真空通孔21内可选择嵌入多孔隙陶瓷材料的嵌塞件,目的也是为了抽真空,使其有吸持的作用,同时也可防止异物进入真空管道中,此外,所述晶圆30本身因为大面积及薄型化的因素会产生机械强度降低,因此产生所述晶圆30中间凹陷的弯曲问题,其中所述填充流体14可做为强化支撑所述晶圆30,可解决所述晶圆30弯曲问题具有提升所述晶圆30平坦化的功效。 The holding through hole surrounding the vacuum suction system 2 caulking member selectively insert porous ceramic material 21, also for the purpose of evacuation, holding it with a suction effect, but also to prevent foreign matter into the vacuum line, in addition, the wafer 30 itself as a large area and thickness of the factors of reduced mechanical strength is generated, and therefore the problem of the bending of the wafer 30 intermediate the recess, wherein the reinforcing filler can be used as the fluid 14 supporting the wafer 30, solve the problem of the wafer 30 having a curved lifting of the wafer 30 planarized effect.

[0034] 请参照图4B所示,当所述晶圆30已固定好后,再透过一研磨供应系统5的一研磨浆供应器50供应一研磨浆51,滴到所述晶圆30的一研磨面(即背面、上表面),并透过一研磨头4上的多个研磨区,以及透过所述研磨头4与所述承载台10的相对转动,来达到所述晶圆30背面研磨的效果。 [0034] Referring to FIG. 4B, when the wafer 30 has been fixed, and then a supply of a polishing slurry supply system 51 through a slurry supply 5 of 50, the wafer 30 is dropped a polishing surface (i.e. the back surface, an upper surface), and through a plurality of refining zones on the polishing head 4, and the relative rotation of the polishing head 4 through the carrier station 10, the wafer 30 is achieved back grinding effect. 当研磨过程结束,再打开所述阀体15,使得所述填充流体14通过所述填充液供应管13排出容置空间。 When the end of the grinding process, and then open the valve body 15, such that the fill fluid 13 is discharged through the receiving space 14 of the filling liquid supply pipe. 所述填充流体14可以回收重复使用,以用于下一次的晶圆背磨作业中。 The fill fluid 14 may be recycled reused for the next wafer back grinding operations. [0035] 请参照图5A所示的另一实施例的使用方法步骤中,所述承载系统I的容置空间11主要是容置多个晶片上的所述多个凸块31,并通过容置在所述容置空间11内的所述多孔隙填充承载材料16,在研磨所述晶圆30之前,先利用所述抽真空管道17对所述多孔隙填充承载材料16抽真空,使已被抽真空的所述多孔隙填充承载材料16' (示于图5B)缩减体积及提高致密度,以抓紧所述晶圆30的一有源表面上的多个凸块31,以达到固定的作用,此夕卜,所述晶圆30本身因为大面积及薄型化的因素会产生机械强度降低,因此产生所述晶圆 Using another method step [0035] Referring to FIG. 5A in the embodiment shown, the carrier system I accommodating space 11 of the main accommodating a plurality of wafers on the plurality of bumps 31, by volume disposed in the porous within the accommodating space 11 filled with the carrier material 16, prior to the polishing of the wafer 30, using the first vacuum pumping aperture path 17 the multi-carrier filler material 16 is evacuated to have vacuumed filling the porous carrier material 16 '(shown in FIG. 5B) and the volume was reduced to improve the density, to grasp the plurality of bumps 31 on an active surface of the wafer 30 to reach the fixed effect, Bu this evening, the wafer 30 itself, because a large area and thickness of the factors of reduced mechanical strength is generated, thus generating said wafer

30中间凹陷的弯曲问题,其中所述多孔隙填充承载材料16可做为强化支撑所述晶圆30,可解决所述晶圆30弯曲问题具有提升所述晶圆30平坦化的功效,再者,所述多孔隙填充承载材料16不会与所述晶圆30表面反应也无存在粘胶,因此晶圆薄化制程结束后不会产生污染所述晶圆30或残胶的问题。 Problems intermediate curved recess 30, wherein the porous filler material 16 can be used as carrier to strengthen the wafer support 30, wafer 30 can solve the problem of the bending of the wafer 30 having a lifting effect planarization, furthermore the porous carrier material 16 does not fill and no adhesive is present to react with the surface of the wafer 30, so that no problems of pollution of the wafer 30 or an adhesive residue after wafer thinning process. 再通过将所述周边吸持系统2的真空通孔21中的空气抽成真空,可辅助以吸持所述晶圆30的周围,同样可达到固定及支撑的作用。 Then the periphery by vacuum suction through holes 21 in the holder system 2 is evacuated of air, can be assisted by the suction holding of the wafer 30 around, the same effect can be achieved and a fixed support. 所述周边吸持系统2的真空通孔21内可选择嵌入多孔隙陶瓷材料的嵌塞件,目的也是为了抽真空,使其有吸持的作用,同时也可防止异物进入真空管道中。 The holding through hole surrounding the vacuum suction system 2 caulking member selectively insert porous ceramic material 21, also for the purpose of evacuation, holding it with a suction effect, but also to prevent foreign matter into the vacuum line.

[0036] 请参照图5B所示,当所述晶圆30已固定好后,再透过一研磨供应系统5的一研磨浆供应器50供应一研磨浆51,滴到所述晶圆30的一研磨面(背面),并透过研磨头4上的多个研磨区,以及透过所述研磨头4与所述承载台10的相对转动,来达到所述晶圆30背面研磨的效果。 [0036] Referring to FIG 5B, when the wafer 30 has been fixed, and then a supply of a polishing slurry supply system 51 through a slurry supply 5 of 50, the wafer 30 is dropped a polishing surface (back surface), and a plurality of through polishing regions on the polishing head 4, and the relative rotation of the polishing head 4 through the mounting platform 10, to achieve the effect of grinding the wafer back surface 30. 所述多孔隙填充承载材料16可以回收重复使用,以用于下一次的晶圆背磨作业中。 Filling the porous carrier material 16 can be recycled reused for the next wafer back grinding operations. 当所述多孔隙填充承载材料16若因为抽真空多次,产生体积松弛(即无法复原至原体积时)或有过多异物塞入微孔洞时,也可轻易更换以利使用。 When filling the porous carrier material 16, if a plurality of times because the vacuum generated volume of slack (i.e., when not restored to the original volume) or excessive foreign matter inserted into the micro voids can also be easily replaced to facilitate use. [0037] 请参照图6A所示的又一实施例的使用方法步骤中,所述承载系统I的容置空间11先放入所述多孔隙承载格栅18,所述多孔隙承载格栅18刚好可支撑所述晶圆30上的多个预定晶片切割位置,放上所述晶圆30后,使得所述晶圆30的一有源表面上的多个凸块31容置在所述多孔隙承载格栅18的多个空格181内。 [0037] Referring to FIG. 6A still another embodiment using the method shown in Example step, the carrier accommodating space 11 of the first system I into the porous carrier grid 18, the grid 18 of the porous carrier just may support a plurality of wafers on the predetermined cutting position of the wafer 30, the wafer 30 placed on the rear, such that an active of the wafer 31 accommodating a plurality of bumps on the surface 30 of the multi- carrying a plurality of apertures within the grid spaces of 18,118. 此时,在研磨过程之前,先利用所述抽真空管道17对所述多孔隙承载格栅18抽真空,使真空吸力通过所述多孔隙承载格栅18吸住所述晶圆30不具有凸块31的有源表面部份,以达到固定所述晶圆30的作用,此外,所述晶圆30本身因为大面积及薄型化的因素会产生机械强度降低,因此产生所述晶圆30中间凹陷的弯曲问题,其中所述多孔隙承载格栅18可做为强化支撑所述晶圆3,可解决所述晶圆3弯曲问题具有提升所述晶圆3平坦化的功效,再者,所述多孔隙承载格栅18不会与所述晶圆3表面反应也无存在粘胶,因此晶圆薄化制程结束后不会产生污染所述晶圆3或残胶的问题。 At this time, before the grinding process, using the first vacuum pumping aperture path 17 bearing the multi-grid 18 is evacuated to a vacuum suction grid 18 carried by the sucking said porous wafer 30 having no bumps the active surface portion 31 to achieve the effect of securing the wafer 30, moreover, because of the large area of ​​the wafer 30 itself and thinning factor produces a decrease in mechanical strength, thus creating intermediate recess 30 of the wafer the bending problem, wherein the porous carrier can be used as reinforcing grid 18 supporting the wafer 3, the wafer 3 can solve the problem with curved lifting said wafer planarization 3 efficacy Moreover, the porous carrier grid 18 does not exist and no reaction to the adhesive surface of the wafer 3 and, so no problem of pollution of the wafer 3 or the adhesive residue after wafer thinning process. 再通过将所述周边吸持系统2的真空通孔21中的空气抽成真空,可辅助以吸持所述晶圆30的周围,同样可达到固定及支撑的作用。 Then the periphery by vacuum suction through holes 21 in the holder system 2 is evacuated of air, can be assisted by the suction holding of the wafer 30 around, the same effect can be achieved and a fixed support. 所述周边吸持系统2的真空通孔21内可选择嵌入多孔隙陶瓷材料的嵌塞件,目的也是为了抽真空,使其有吸持的作用,同时也可防止异物进入真空管道中。 The holding through hole surrounding the vacuum suction system 2 caulking member selectively insert porous ceramic material 21, also for the purpose of evacuation, holding it with a suction effect, but also to prevent foreign matter into the vacuum line.

[0038] 请参照图6B所示,当所述晶圆30已固定好后,再透过一研磨供应系统5的一研磨浆供应器50供应一研磨浆51,滴到所述晶圆30的一研磨面(背面),并透过研磨头4上的多个研磨区,以及透过所述研磨头4与所述承载台10的相对转动,来达到所述晶圆30背面研磨的效果。 [0038] Referring to FIG 6B, when the wafer 30 has been fixed, and then a supply of a polishing slurry supply system 51 through a slurry supply 5 of 50, the wafer 30 is dropped a polishing surface (back surface), and a plurality of through polishing regions on the polishing head 4, and the relative rotation of the polishing head 4 through the mounting platform 10, to achieve the effect of grinding the wafer back surface 30. 所述多孔隙承载格栅18可以回收重复使用,以用于下一次的晶圆背磨作业中。 The porous carrier grid 18 can be recycled reused for the next wafer back grinding operations. 当所述多孔隙承载格栅18若因为抽真空多次,产生异物塞住微孔洞影响真空吸力传导时,也可轻易更换以利使用。 When the porous carrier grid 18 because if multiple vacuum, foreign matter stoppered microvoids conducting vacuum suction generated impact can also be easily replaced to facilitate use.

[0039] 如上所述,相较于现有晶圆研磨用承载盘组件,需要透过晶圆贴膜胶带以包覆所述晶圆30有源表面的多个凸块31,使得在研磨晶圆背面过程可达到保护有源表面及凸块 [0039] As described above, compared to conventional polishing the wafer carrier plate assembly requires the wafer through a plurality of bump foil tape 31 covers the active surface of the wafer 30, so that the polished wafer process can reach the back surface of the protective and active bumps

31的作用,本发明提出的所述晶圆研磨用承载盘组件不但可以在研磨晶圆背面过程达到保护的作用,同时也可以节省使用胶带的成本,以及节省胶带贴膜和校准的工艺,故可以用以取代现有使用晶圆贴膜胶带的方式以及提供具备可重复使用的优点。 Action 31, the wafer polishing carrier plate assembly proposed by the present invention can be achieved not only protect the backside of the wafer in the grinding process, but can also cost-adhesive tapes, film and tape and save the calibration process, it is possible to replace the existing manner using the wafer film and adhesive tape comprises providing advantages reusable.

[0040] 本发明已由上述相关实施例加以描述,然而上述实施例仅为实施本发明的范例。 [0040] The present invention has been related to the above-described embodiments to be described, however, the above-described embodiments are merely exemplary embodiments of the present invention. 必需指出的是,已公开的实施例并未限制本发明的范围。 It must be noted that the disclosed embodiments do not limit the scope of the present invention. 相反地,包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。 Rather, the claims comprising the spirit and scope of modifications and equivalents are included within the scope provided according to the present invention.

Claims (10)

  1. 1. 一种晶圆研磨用承载盘组件,其特征在于:所述承载盘组件包含: 一承载系统,包含: 一承载台,具有一上表面,所述上表面为一平面,与一晶圆的一表面相接触;以及至少一个容置空间,凹设于所述承载台的中间部分,其中所述容置空间具有一底部与所述承载台的上表面具有一高度差,并所述高度差大于所述晶圆的表面上的多个凸块的最大高度;以及一周边吸持系统,包含: 至少一真空通孔,设置于所述承载台的周边,所述真空通孔与所述承载台的上表面相连结,所述真空通孔以提供真空吸持所述晶圆的表面。 1. A wafer polishing carrier plate assembly, wherein: said carrier plate assembly comprising: a carrier system, comprising: a supporting table having an upper surface, said upper surface is a plane, and a wafer contacting a surface; and a height of said at least one receiving space recessed in the intermediate portion of the carrier platform, wherein the accommodating space having a bottom and upper surface of the load platform having a height difference, and the difference is greater than the maximum height of the plurality of bumps on the surface of the wafer; and a peripheral chucking system, comprising: at least one vacuum through holes provided in the periphery of the load platform, the through-hole and the vacuum the upper surface of the mounting platform is connected with an aperture to provide a vacuum through vacuum chucking surface of the wafer.
  2. 2.如权利要求I所述的晶圆研磨用承载盘组件,其特征在于:所述承载系统另包含: 一填充液供应管,设置在所述承载台内,与所述容置空间的底部相连通;以及一填充流体,通过所述填充液供应管进入或排出所述容置空间。 2. The wafer polishing carrier plate assembly according to claim I, characterized in that: said bearing system further comprises: a filling liquid supply pipe at the bottom, is provided in the carrier station, and the accommodating space communicating; and filling a fluid supply tube into or out of the accommodating space via the filling liquid.
  3. 3.如权利要求2所述的晶圆研磨用承载盘组件,其特征在于:所述填充流体为去离子水。 Polishing the wafer carrier plate assembly according to claim 2, wherein: the fill fluid is deionized water.
  4. 4.如权利要求2所述的晶圆研磨用承载盘组件,其特征在于:所述承载系统另包含: 一阀体,设置在所述填充液供应管上,以防止所述容置空间内的填充流体回流。 4. The wafer polishing carrier plate assembly according to claim 2, characterized in that: said bearing system further comprises: a valve disposed in the filling liquid supply pipe to prevent the accommodating space fluid-filled reflux.
  5. 5.如权利要求I所述的晶圆研磨用承载盘组件,其特征在于:所述承载系统另包含: 一多孔隙填充承载材料,容置在所述容置空间内;以及一抽真空管道,设于所述容置空间的底部与所述承载台相连结,与所述多孔隙填充承载材料相接触。 5. The wafer polishing carrier plate assembly according to claim I, wherein: the carrier system further comprising: filling a porous carrier material, accommodated in the accommodating space; and a evacuation conduits , provided at the bottom of the accommodating space station coupled to the carrier, in contact with the porous carrier material is filled.
  6. 6.如权利要求5所述的晶圆研磨用承载盘组件,其特征在于:所述多孔隙填充承载材料为多孔隙海棉材料或多孔隙橡胶材料。 Polishing the wafer carrier plate assembly as claimed in claim 5, characterized in that: the porous carrier material is a porous filling material, sponge rubber material or the pores.
  7. 7.如权利要求I所述的晶圆研磨用承载盘组件,其特征在于:所述承载系统另包含: 一多孔隙承载格栅,容置在所述容置空间内,具有多个空格可容置所述晶圆的多个凸块;以及一抽真空管道,对所述多孔隙承载格栅抽真空,与所述承载台的上表面相连结。 7. The wafer polishing carrier plate assembly according to claim I, wherein: the carrier system further comprising: a porous carrier grid, accommodated within the accommodating space, having a plurality of spaces may be receiving said plurality of wafer bumps; evacuated and a vacuum line, the vacuum grid porous carrier, the upper surface of the load platform coupled.
  8. 8.如权利要求7所述的晶圆研磨用承载盘组件,其特征在于:所述多孔隙承载格栅的材料为多孔隙陶瓷材料。 8. The wafer polishing carrier plate assembly according to claim 7, wherein: the porous carrier material is a porous grid of a ceramic material.
  9. 9.如权利要求I所述的晶圆研磨用承载盘组件,其特征在于:所述周边吸持系统的真空通孔为一个连续环状通孔、数个环状排列的柱状通孔或数个放射状排列的矩形通孔。 9. The wafer polishing carrier plate assembly according to claim I, wherein: said through hole surrounding the vacuum suction system for holding a continuous annular through hole, a plurality of cylindrical through-holes arranged in a ring or several rectangular through-holes radially arranged.
  10. 10.如权利要求I或9所述的晶圆研磨用承载盘组件,其特征在于:所述周边吸持系统的真空通孔内另包含多孔隙陶瓷材料的嵌塞件。 10. I or polishing the wafer carrier plate assembly according to claim 9, wherein: said perimeter confining a vacuum system further comprises a through-hole of the porous ceramic member caulking material.
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