CN102962588B - Method for fabricating invisibly structured substrate - Google Patents
Method for fabricating invisibly structured substrate Download PDFInfo
- Publication number
- CN102962588B CN102962588B CN201210533750.6A CN201210533750A CN102962588B CN 102962588 B CN102962588 B CN 102962588B CN 201210533750 A CN201210533750 A CN 201210533750A CN 102962588 B CN102962588 B CN 102962588B
- Authority
- CN
- China
- Prior art keywords
- substrate
- laser
- invisible structure
- structure substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a method for fabricating an invisibly structured substrate, which forms a novel invisibly structured substrate. The method comprises the steps that a focusing device is arranged below a laser transmitter; the laser transmitter is internally provided with a module capable of moving two-dimensional and three-dimensional programmable graphs; the focusing device is provided with a focus depth controllable module and a common substrate; laser beams of the laser transmitter are focused by a lens of the focusing device to ensure that the laser beams are focused on the common substrate to change physical or chemical properties; and a finished product of the invisibly structured substrate is obtained. According to the method, properties of materials in different depths are changed by a depth-controllable and free-focusing laser system, a technology for fabricating the invisibly structured substrate is simplified, the processing efficiency is improved, and the processing cost of the epitaxial substrate is lowered.
Description
Technical field
The invention belongs to field of semiconductor manufacture, relate to the technology of preparing of semiconductor devices epitaxial growth Novel substrate structure.
Background technology
Because typical substrate (Si, sapphire etc.) has different lattice mismatches and thermal coefficient of expansion from GaN epitaxial layer, after growth, internal stress can be produced at epitaxial layer.In some field, the stress field in epitaxial layer affects to some extent or governs the performance of semiconductor devices.Such as, light emitting diode (LED), FET (TFT) etc.One of stress field puzzlement problem becoming semiconductor applications of hetero-epitaxy.At present, scientific researcher carries out Stress Release by different approach, also achieves breakthrough progress, achieves business application in some field.But, high performance device cannot be realized in some field owing to there is the stress field of hetero-epitaxy, thus cannot apply.Invisible structure substrate may become a kind of Novel substrate of the field that efficiently eliminates stress, and can carry out character change and form invisible structure substrate by multiple technologies approach to general substrate.But invisible structure substrate is also in developing stage, its structure is also in the developmental research stage, and its method prepared also is in heuristic process in addition.How to prepare the invisible structure substrate being conducive to GaN epitaxially deposited layer Stress Release efficiently and remain a problem needing to be explored.
Summary of the invention
Be the deficiency existed for prior art, provide a kind of technology of preparing of invisible structure substrate, it is in conjunction with traditional laserscribing feature order of the present invention, and invention is a kind of prepares invisible structure substrate new and effectively.The present invention utilizes laser build-in attribute, in conjunction with focusing arrangement, by regulating the energy of laser, the relevant parameters such as focus, general substrate being carried out fixed point location ground performance process and improvement, thus forms a kind of novel invisible structure substrate.The performance improvement layer of invisible structure substrate comprises the change of the performances such as Material texture physical chemistry (lattice paprmeter, crystalline phase, Young's modulus, thermal coefficient of expansion) and forms air-gap hollow-out layer etc.
For achieving the above object, the present invention adopts following scheme:
A kind of method preparing invisible structure substrate, the invisible structure substrate technology of preparing utilizing extension to use, the material character of different depth is changed by degree of depth controllable free focused laser system, reach the preparation effect of specific function structured substrate, utilize laser technology, realize III-V or the II-VI compound invisible structure substrate efficiently preparing Si, sapphire, SiC, it is characterized in that, the step of preparation method is as follows:
1., clean substrate is for subsequent use;
2., arrange focusing arrangement below generating laser, be provided with the module that can realize two dimension and the movement of three-dimensional programmable figure in generating laser, focusing arrangement is provided with the controlled module of the depth of focus, arranges general substrate at focusing arrangement;
3., by software carry out image conversion design, and the laser beam controlling generating laser is focused on according to framing by focusing arrangement, make laser beam change the material character of general substrate focal position;
4., generating laser is provided with step-by-step system, laser beam planar movement is controlled by the step-by-step system of X, Y-coordinate, the mode of step-by-step system comprises continuous sweep, indirect scanning, step direction is adjustable, focusing arrangement controls the position of laser beam in general substrate by Z axis, thus fixed point location ground changes the correlated performance of general substrate;
5., the preparation of lasing light emitter by using wavelength (100-2000nm) or the generating laser of regulating power (10mw-10w) to realize laser energy, focus layer is in substrate interior;
6., backing material character changes one or more combinations obtaining and comprise in density, Young's modulus, lattice paprmeter, crystalline phase, chemical bond energy, thermal coefficient of expansion, atomic building, the change of backing material nature parameters and epitaxial material parameter matching;
7., by the atmosphere (hydrogen, nitrogen, oxygen, helium, air) residing for backing material, coordinate laser focusing device to complete, obtain invisible structure substrate finished product.
Wherein in some embodiments, described step 3. laser beam in general substrate internal focus, carry out individual layer performance improvement, performance change layer is after laser treatment, the performance of each side there occurs corresponding improvement, lattice paprmeter, crystalline phase, Young's modulus, thermal coefficient of expansion, issue biochemical structural rearrangement in certain atmosphere and change material character.
Wherein in some embodiments, 3. described step is carried out multilayer or is periodically improved in general substrate inside.
Wherein in some embodiments, described step 3. performance improvement layer makes substrate interior structural rearrangement by Laser Focusing high temperature mode or decomposes volatilization to form air-gap hollow out substrate layer, the invisible structure substrate of the aspect couplings such as final forming property.
The present invention changes the material character of different depth by degree of depth controllable free focused laser system, reach the preparation effect of specific function structured substrate, simplify the technique preparing invisible structure substrate, improve working (machining) efficiency, reduce the cost of epitaxial substrate processing, realize the efficient performance changing the aspects such as the physical chemistry of general substrate.
Accompanying drawing explanation
Laser embodiment illustrated in fig. 1 prepares invisible structure substrate schematic diagram;
Laser embodiment illustrated in fig. 2 prepares invisible structure substrate realization means;
Invisible structure substrate solution one embodiment illustrated in fig. 3;
Invisible structure substrate solution two embodiment illustrated in fig. 4.
Detailed description of the invention
For concrete order ground, the function that can understand feature of the present invention, technological means further and reach, resolve the advantages and spirit of the present invention, by the present invention is further elaborated by the following examples.
The design sketch of the embodiment of the present invention is see accompanying drawing 1, accompanying drawing 2, and laser beam scioptics focus on, and makes laser beam focus in general substrate, carry out the performance change such as physics or chemistry.Laser beam planar movement is controlled by the step-by-step system of X, Y-coordinate, the mode of step-by-step system comprises continuous sweep, indirect scanning etc., step direction is variable, focusing arrangement controls the position of laser beam in general substrate by Z axis, thus fixed point location ground changes the correlated performance of general substrate.Laser Focusing layer of the present invention can in the optional position of general substrate, and focus layer can on substrate interior or surface etc.On the other hand, lasing light emitter can by the preparation using the generating laser of different wave length or regulating power to realize different condition laser energy.
As shown in Figure 3, laser beam, in general substrate internal focus, carries out individual layer performance improvement to the invisible structure substrate utilizing laser to prepare.Performance change layer is after laser treatment, and the performance of each side there occurs corresponding improvement, such as lattice paprmeter, crystalline phase, Young's modulus, thermal coefficient of expansion etc., even issues biochemical structural rearrangement in certain atmosphere and changes material character.Fig. 4 is the derivative preparation thinking of Fig. 3, can carry out multilayer as required in general substrate inside or periodically improve.On the other hand, the performance improvement layer mentioned before this can make substrate interior structural rearrangement by modes such as Laser Focusing high temperature or decompose volatilization to form air-gap hollow out substrate layer.The invisible structure substrate of the aspect couplings such as final forming property.
By the present invention, utilize laser technology, realize efficiently preparing III-V or the II-VI compound invisible structure substrates such as Si, sapphire, SiC.For the preparation of invisible structure substrate provides a kind of new technique of feasibility.
Technical characteristics of the present invention is the material character being changed different depth by degree of depth controllable free focused laser system, and reach the preparation effect of specific function structured substrate, the present invention is used in the preparation of epitaxial substrate, there is the controlled module of the depth of focus, can realize the module of two dimension and the movement of three-dimensional programmable figure, its material character, its feature comprises density, Young's modulus, lattice paprmeter, crystalline phase, chemical bond energy, thermal coefficient of expansion, one or more any combination in atomic building; Laser focusing device is coordinated to complete by the atmosphere residing for material.
Invisible structure substrate of the present invention is a kind of novel epitaxial structure substrate, can realize good Stress Release effect in hetero-epitaxy.The present invention is technological approaches with laser, utilizes the features such as the wavelength of laser instrument and energy, in conjunction with focusing arrangement, processes general substrate to fixed point location, reaches the performance of improvement general substrate, forms invisible structure substrate.The present invention changes traditional invisible structure substrate fabrication method, simplifies the technique preparing invisible structure substrate, improves working (machining) efficiency, reduces the cost of epitaxial substrate processing, realizes the efficient performance changing the aspects such as the physical chemistry of general substrate.
The above embodiment only have expressed the specific embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that the technology for this area, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (5)
1. prepare the method for invisible structure substrate for one kind, the invisible structure substrate technology of preparing utilizing extension to use, the material character of different depth is changed by degree of depth controllable free focused laser system, reach the preparation effect of specific function structured substrate, utilize laser technology, realize III-V or the II-VI compound invisible structure substrate efficiently preparing Si, sapphire, SiC, it is characterized in that, the step of preparation method is as follows:
1., clean substrate is for subsequent use;
2., arrange focusing arrangement below generating laser, be provided with the module that can realize two dimension and the movement of three-dimensional programmable figure in generating laser, focusing arrangement is provided with the controlled module of the depth of focus, below focusing arrangement, arrange general substrate;
3., by software carry out image conversion design, and the laser beam controlling generating laser is focused on according to framing by focusing arrangement, make laser beam change the material character of general substrate focal position;
4., generating laser is provided with step-by-step system, laser beam planar movement is controlled by the step-by-step system of X, Y-coordinate, the working method of step-by-step system comprises continuous sweep, indirect scanning, step direction is adjustable, focusing arrangement controls the position of laser beam in general substrate by Z axis, thus fixed point location ground changes the correlated performance of general substrate;
5., the preparation of lasing light emitter by using the generating laser of wavelength 100-2000nm or regulating power 10mw-10w to realize laser energy, focus layer is in substrate interior;
6., backing material character changes one or more combinations obtaining and comprise in density, Young's modulus, lattice paprmeter, crystalline phase, chemical bond energy, thermal coefficient of expansion, atomic building;
7., by the atmosphere residing for backing material, coordinate laser focusing device to complete, obtain invisible structure substrate finished product.
2. a kind of method preparing invisible structure substrate according to claim 1, it is characterized in that, described step 3. laser beam in general substrate internal focus, carry out individual layer performance improvement, performance change layer is after laser treatment, the performance of each side there occurs corresponding improvement, lattice paprmeter, crystalline phase, Young's modulus, thermal coefficient of expansion, issues biochemical structural rearrangement change material character in certain atmosphere.
3. a kind of method preparing invisible structure substrate according to claim 1, is characterized in that, 3. described step is improved in general substrate inside with carrying out multilayer.
4. a kind of method preparing invisible structure substrate according to claim 1, it is characterized in that, described step 3. performance improvement layer makes substrate interior structural rearrangement by Laser Focusing high temperature mode or decomposes volatilization to form air-gap hollow out substrate layer, the invisible structure substrate that final forming property aspect is mated with the epitaxially grown layer of needs.
5. a kind of method preparing invisible structure substrate according to claim 1, is characterized in that, described step 7. in atmosphere be hydrogen, nitrogen, oxygen, helium, air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533750.6A CN102962588B (en) | 2012-12-12 | 2012-12-12 | Method for fabricating invisibly structured substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533750.6A CN102962588B (en) | 2012-12-12 | 2012-12-12 | Method for fabricating invisibly structured substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102962588A CN102962588A (en) | 2013-03-13 |
| CN102962588B true CN102962588B (en) | 2015-04-22 |
Family
ID=47793178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210533750.6A Active CN102962588B (en) | 2012-12-12 | 2012-12-12 | Method for fabricating invisibly structured substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102962588B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935485A (en) * | 2017-03-03 | 2017-07-07 | 上海新傲科技股份有限公司 | For the substrate local amorphous method of nitride epitaxial growth |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1873924A (en) * | 2005-06-01 | 2006-12-06 | 株式会社瑞萨科技 | Semiconductor manufacture method |
| CN1967816A (en) * | 2005-11-16 | 2007-05-23 | 株式会社电装 | Wafer and wafer cutting and dividing method |
| CN101017775A (en) * | 2006-12-19 | 2007-08-15 | 北京大学 | Method for reducing the stress between the GaN single crystal film and heterogeneous substrate |
| JP2012004316A (en) * | 2010-06-16 | 2012-01-05 | Showa Denko Kk | Laser processing method |
| CN202438789U (en) * | 2011-12-15 | 2012-09-19 | 深圳市海目星激光科技有限公司 | A vibrating mirror type three-dimensional laser machine for texturing a mould cavity curved surface |
| CN102699526A (en) * | 2012-06-01 | 2012-10-03 | 苏州德龙激光有限公司 | Method and device for cutting machined object by using laser |
-
2012
- 2012-12-12 CN CN201210533750.6A patent/CN102962588B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1873924A (en) * | 2005-06-01 | 2006-12-06 | 株式会社瑞萨科技 | Semiconductor manufacture method |
| CN1967816A (en) * | 2005-11-16 | 2007-05-23 | 株式会社电装 | Wafer and wafer cutting and dividing method |
| CN101017775A (en) * | 2006-12-19 | 2007-08-15 | 北京大学 | Method for reducing the stress between the GaN single crystal film and heterogeneous substrate |
| JP2012004316A (en) * | 2010-06-16 | 2012-01-05 | Showa Denko Kk | Laser processing method |
| CN202438789U (en) * | 2011-12-15 | 2012-09-19 | 深圳市海目星激光科技有限公司 | A vibrating mirror type three-dimensional laser machine for texturing a mould cavity curved surface |
| CN102699526A (en) * | 2012-06-01 | 2012-10-03 | 苏州德龙激光有限公司 | Method and device for cutting machined object by using laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102962588A (en) | 2013-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101229658B1 (en) | Laser dicing method and laser dicing apparatus | |
| CN107170668B (en) | Preparation method of self-supporting gallium nitride | |
| CN1020025C (en) | Process for producing substrate for selective crystal growth | |
| CN101311358B (en) | Process for preparing zinc oxide nanometer wire array by femtosecond laser and device thereof | |
| CN103346476B (en) | Photonic crystal nano cavity Quantum Rings single photon emission device and preparation method thereof | |
| CN101486439B (en) | Germanium nanopoint/silicon nanowire array structure thin film and preparation thereof | |
| CN103367121A (en) | Epitaxial structure body manufacture method | |
| CN107881472A (en) | A kind of CsPbI3The preparation method of film | |
| JP2009519193A5 (en) | ||
| CN101245491B (en) | Method for growing unsupported gallium nitride nanocrystalline on zinc oxide of nano-stick | |
| CN102962588B (en) | Method for fabricating invisibly structured substrate | |
| CN206732372U (en) | A kind of ultrafast picosecond laser Precision Machining equipment of the more laser heads of large format | |
| CN103996606B (en) | High-uniformity AlN film growing on sapphire substrate and preparing method and application of high-uniformity AlN film | |
| CN105529246A (en) | Method for preparing silicon carbide super-junction structure through laser etching | |
| CN105800570A (en) | Controllable synthetic method of two-dimensional wurtzite-form cadmium selenide nanomaterials | |
| TW200924577A (en) | Transfer component and the high perfromance laser-assisted transferring system using the same | |
| CN108899267A (en) | A kind of preparation method of metal-doped molybdenum disulfide film | |
| CN107904577A (en) | A kind of controllable surface preparation method of wellability based on dynamic control | |
| JP6150371B2 (en) | Zinc oxide (ZnO) single crystal, ZnO thin film, method for producing ZnO single crystal thin film, ZnO single crystal thin film, and ZnO based material comprising the ZnO single crystal thin film | |
| CN106115681A (en) | One realizes the patterned method of two-dimensional material | |
| CN103848392B (en) | The manufacture method of the black silicon of large area that a kind of micro structure cycle is controlled | |
| CN102662212A (en) | Photonic crystal and preparation method thereof | |
| CN111850507A (en) | Method and device for synchronously and compositely manufacturing diamond micro-grating based on micro-additive and micro-additive materials | |
| CN106044844A (en) | Preparation method of porous zinc oxide nanowire arrays | |
| Kukushkin et al. | SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |