CN102956191A - Compensation circuit of organic light emitting diode - Google Patents

Compensation circuit of organic light emitting diode Download PDF

Info

Publication number
CN102956191A
CN102956191A CN2011102845329A CN201110284532A CN102956191A CN 102956191 A CN102956191 A CN 102956191A CN 2011102845329 A CN2011102845329 A CN 2011102845329A CN 201110284532 A CN201110284532 A CN 201110284532A CN 102956191 A CN102956191 A CN 102956191A
Authority
CN
China
Prior art keywords
described
tft
thin film
film transistor
type thin
Prior art date
Application number
CN2011102845329A
Other languages
Chinese (zh)
Other versions
CN102956191B (en
Inventor
柯健专
吴昭慧
Original Assignee
瀚宇彩晶股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to TW100129312 priority Critical
Priority to TW100129312A priority patent/TWI442374B/en
Application filed by 瀚宇彩晶股份有限公司 filed Critical 瀚宇彩晶股份有限公司
Publication of CN102956191A publication Critical patent/CN102956191A/en
Application granted granted Critical
Publication of CN102956191B publication Critical patent/CN102956191B/en

Links

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0819Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes

Abstract

The invention discloses a compensation circuit of an organic light emitting diode, comprising a first capacitor, a second capacitor, a stabilizer unit, a third transistor, an organic light emitting diode and a driver unit. The stabilizer unit comprises a first transistor, a second transistor and a photodiode. The driver unit comprises a fourth transistor, a fifth transistor and a sixth transistor. The fifth transistor is used for driving the organic light emitting diode. The first transistor, the second transistor, the third transistor, the fourth transistor and the sixth transistor are used as switches. The first capacitor is used as a compensation capacitor. The second capacitor is used for storing a data voltage. By controlling a voltage of a node in the circuit, the current of the organic light emitting diode can be increased to maintain a stable brightness of the organic light emitting diode.

Description

The Organic Light Emitting Diode compensating circuit

Technical field

The present invention relates to light emitting diode compensating circuit technical field, relate in particular a kind of Organic Light Emitting Diode compensating circuit of keeping the stability of Organic Light Emitting Diode OLED brightness.

Background technology

Active array Organic Light Emitting Diode (Active-Matrix Organic Light-Emitting Diode, AMOLED) but display has the characteristics such as thin thickness, lightweight, autoluminescence, low driving voltage, high-level efficiency, high-contrast, high color saturation, the fast Rao Qu of reaction velocity, Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display is regarded as continuing, TFT-LCD) afterwards, the emerging display technique that is expected most.

But because Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) brightness that shows of assembly is to be determined by the size of current that flows through, therefore just must accomplish accurately to control electric current if accurately control pixel intensity, as long as the voltage quasi position of control writing pixel just can be controlled pixel intensity, difficulty can be described as quite highly compared to TFT-LCD.

In fact AMOLED has also run into many problems.See also Fig. 1 and Fig. 2, Fig. 1 is the circuit diagram of uncompensated P transistor npn npn AMOLED image element circuit framework; Fig. 2 is the circuit diagram of uncompensated N-type transistor AMOLED image element circuit framework.As shown in the figure, because the OLED electric current I OLEDBy data voltage V DATAUtilization operates in the electric current that the thin film transistor (TFT) (Thin-Film Transistor, TFT) (the thin film transistor (TFT) T200 among Fig. 1 and Fig. 2) of saturation region converts to, and its formula is I OLED=K (V GS-V TH) 2, after AMOLED is through long the use, the V of TFT THCan become large, and carrier mobility (Mobility) can diminish also, thus just can be so that I OLEDDescend, cause the brightness decay of AMOLED.

In addition, because the problem that cross-pressure rises gradually and luminescence efficiency descends under long-time operation, can occur in the phenomenon of OLED material aging.The rising of OLED cross-pressure may have influence on the operation of thin film transistor (TFT), take the N-type thin film transistor (TFT) as example, if OLED is connected on the source terminal of thin film transistor (TFT), when rising, the OLED cross-pressure can directly have influence on the terminal voltage source electrode direct electric current that flows through of impact namely between the gate-source electrode of thin film transistor (TFT).And aspect luminescence efficiency, if descend because long-time operation causes the material aging luminescence efficiency, even flow through so the brightness that identical electric current also can't produce expection.If the luminescence efficiency decline degree of red (R), green (G), blue (B) three looks different, the problem of colour cast more can occur.But material improves difficult, so this is not a problem that can solve easily.

Along with the increasing of panel size, signal wire elongates gradually, and inhibition effect can be day by day obvious in it, can affect at last the homogeneity of panel luminance, and this phenomenon is called I-R Drop.See also Fig. 3, be the schematic diagram of I-R Drop.As shown in the figure, VDD and VSS signal wire can produce pressure reduction along with interior inhibition effect, and then cause AMOLED panel diverse location pixel to have different currents, affect the homogeneity of panel luminance.

Summary of the invention

For solving the existing problem of above-mentioned prior art, one of purpose of the present invention just provides a kind of Organic Light Emitting Diode compensating circuit, to solve the problems such as Organic Light Emitting Diode OLED brightness decay in the prior art, luminescence efficiency decline and I-R Drop.

A kind of Organic Light Emitting Diode compensating circuit of the present invention, it comprises one first electric capacity, one second electric capacity, a stabilization element, one the 3rd transistor, an Organic Light Emitting Diode and a driver element.One end of the first electric capacity is first node, and the other end is Section Point.The second electric capacity connects the first power supply and first node.Stabilization element connects the first power supply, second source, the first control signal and the second control signal, stabilization element comprises a first transistor, a transistor seconds and a photodiode, the first transistor connects transistor seconds and its junction is first node, and transistor seconds connects photodiode.The 3rd transistor connects first node, a data voltage and one the 3rd control signal.Organic Light Emitting Diode connects the first power supply or second source.Driver element connects the first power supply or second source, Section Point, Organic Light Emitting Diode, the second control signal and one the 4th control signal, driver element comprises one the 4th transistor, one the 5th transistor and one the 6th transistor, the 4th a transistorized end connects the 5th a transistorized end and its junction is Section Point, and the 4th transistorized other end then connects the 5th transistorized other end and the 6th transistor.

Wherein, stabilization element connects the first power supply and the first control signal via the first transistor, and connects the second control signal via transistor seconds, and connects second source via the input end of photodiode; Driver element connects the second control signal via the 4th transistor, and is connected with OLED via the 5th transistor, and Organic Light Emitting Diode then connects the first power supply, and driver element connects the 4th control signal and second source via the 6th transistor again.

Wherein, the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor and the 6th transistor are respectively one the one P type thin film transistor (TFT), one the 2nd P type thin film transistor (TFT), one the 3rd P type thin film transistor (TFT), one the 4th P type thin film transistor (TFT), one the 5th P type thin film transistor (TFT) and one the 6th P type thin film transistor (TFT).

Wherein, a P type thin film transistor (TFT) in order to the first power source charges to first node; The 2nd P type thin film transistor (TFT) is in order to control photodiode to the time of first node discharge; The 3rd P type thin film transistor (TFT) is in order to control the time of data voltage input; The 4th P type thin film transistor (TFT) is when compensated stage one current potential to be stored in the first electric capacity; The 5th P type thin film transistor (TFT) is in order to drive Organic Light Emitting Diode; The 6th P type thin film transistor (TFT) is in order to the potential difference (PD) on second source and the 6th P type thin film transistor (TFT) is charged on the Section Point when initial reset phase.

Wherein, stabilization element system connects second source and the first control signal via the first transistor, and connects the second control signal via transistor seconds, and connects the first power supply via the output terminal of photodiode; Driver element system connects the second control signal via the 4th transistor, and is connected with OLED via the 5th transistor, and Organic Light Emitting Diode then connects second source, and driver element connects the 4th control signal and the first power supply via the 6th transistor again.

Wherein, the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor and the 6th transistor-based are respectively one first N-type thin film transistor (TFT), one second N-type thin film transistor (TFT), one the 3rd N-type thin film transistor (TFT), one the 4th N-type thin film transistor (TFT), one the 5th N-type thin film transistor (TFT) and one the 6th N-type thin film transistor (TFT).

Wherein, the first N-type thin film transistor (TFT) is in order to be discharged to second source with first node; The second N-type thin film transistor (TFT) is in order to control photodiode to the time of first node charging; The 3rd N-type thin film transistor (TFT) is in order to control the time of data voltage input; The 4th N-type thin film transistor (TFT) is when compensated stage one current potential to be stored in the first electric capacity; The 5th N-type thin film transistor (TFT) is in order to drive Organic Light Emitting Diode; The 6th N-type thin film transistor (TFT) is to be charged on the Section Point in order to the current potential after the first power supply being cut the potential difference (PD) on described the 6th N-type thin film transistor (TFT) when initial reset phase.

From the above, Organic Light Emitting Diode compensating circuit of the present invention is by the potential difference (PD) on the node in the control circuit, even so that the Organic Light Emitting Diode luminescence efficiency when descending, also can make I via compensating circuit OLEDBecome large, just can allow thus the OLED assembly brighter, reach the effect of compensation, keep whereby the stability of OLED brightness.

Description of drawings

Fig. 1 is the circuit diagram of uncompensated P transistor npn npn AMOLED image element circuit framework.

Fig. 2 is the circuit diagram of uncompensated N-type transistor AMOLED image element circuit framework.

Fig. 3 is the schematic diagram of I-R Drop.

Fig. 4 is the circuit diagram of the first embodiment of Organic Light Emitting Diode compensating circuit of the present invention.

Fig. 5 is the signal waveform schematic diagram of the first embodiment of Organic Light Emitting Diode compensating circuit of the present invention.

Fig. 6 is the circuit diagram of the second embodiment of Organic Light Emitting Diode compensating circuit of the present invention.

Fig. 7 is the signal waveform schematic diagram of the second embodiment of Organic Light Emitting Diode compensating circuit of the present invention.

Fig. 8 is the first circuit diagram of circuit variation of the second embodiment of Organic Light Emitting Diode compensating circuit of the present invention.

Fig. 9 is the second circuit schematic diagram of circuit variation of the second embodiment of Organic Light Emitting Diode compensating circuit of the present invention.

Description of reference numerals:

1,2: the Organic Light Emitting Diode compensating circuit; T100, T200: thin film transistor (TFT); T1: a P type thin film transistor (TFT); T2: the 2nd P type thin film transistor (TFT); 3: the three P type thin film transistor (TFT)s of T; T4: the 4th P type thin film transistor (TFT); T5: the 5th P type thin film transistor (TFT); T6: the 6th P type thin film transistor (TFT); T10: the first N-type thin film transistor (TFT); T20: the second N-type thin film transistor (TFT); T30: the 3rd N-type thin film transistor (TFT); T40: the 4th N-type thin film transistor (TFT); T50: the 5th N-type thin film transistor (TFT); T60: the 6th N-type thin film transistor (TFT); OLED: Organic Light Emitting Diode; D: photodiode; C St: electric capacity; C1: the first electric capacity; C2: the second electric capacity; VDD: the first power supply; VSS: second source; Reset[n]: the first control signal; Scan[n-1]: the second control signal; Scan[n]: the 3rd control signal; Emit[n]: the 4th control signal; V Data: data voltage; A: first node; B: Section Point; U1: stabilization element; U2: driver element.

Embodiment

Fig. 4 is the circuit diagram of the first embodiment of Organic Light Emitting Diode compensating circuit of the present invention.Among the figure, Organic Light Emitting Diode compensating circuit 1 comprises seven P type thin film transistor (TFT)s, the first capacitor C 1, the second capacitor C 2, the first control signal Reset[n], the second control signal Scan[n-1], the 3rd control signal Scan[n], the 4th control signal Emit[n], data voltage V Data, the first power vd D, second source VSS and Organic Light Emitting Diode OLED.In seven P type thin film transistor (TFT)s, one of them uses as photodiode (Photo Diode) D, all the other are respectively a P type thin film transistor (TFT) T1, the 2nd P type thin film transistor (TFT) T2, the 3rd P type thin film transistor (TFT) T3, the 4th P type thin film transistor (TFT) T4, the 5th P type thin film transistor (TFT) T5 and the 6th P type thin film transistor (TFT) T6, the one P type thin film transistor (TFT) T1, the 2nd P type thin film transistor (TFT) T2 and photodiode D are considered as a stabilization element U1 at this, the 4th P type thin film transistor (TFT) T4, the 5th P type thin film transistor (TFT) T5 and the 6th P type thin film transistor (TFT) T6 are considered as a driver element U2 at this.Wherein the 5th P type thin film transistor (TFT) T5 is used for driving Organic Light Emitting Diode OLED, all the other P type thin film transistor (TFT) T1, the 2nd P type thin film transistor (TFT) T2, the 3rd P type thin film transistor (TFT) T3, the 4th P type thin film transistor (TFT) T4 and the 6th P type thin film transistor (TFT) T6 use as switch, the first capacitor C 1 is usefulness by way of compensation, and the second capacitor C 2 is used for storage data voltage V Data

In all TFT as switch, the 6th P type thin film transistor (TFT) T6 is used for Section Point B being reset to V at Section Point B during in initial reset phase TH_T6+ VSS is so that can be at follow-up V THAllow the 5th P type thin film transistor (TFT) T5 conducting compensate action during the detecting compensated stage, the 6th P type thin film transistor (TFT) T6 also must conducting when Organic Light Emitting Diode OLED is luminous.The 4th P type thin film transistor (TFT) T4 allows the 5th P type thin film transistor (TFT) T5 can form diode connection (Diode-connection), allows circuit when compensated stage, can produce the V of the 6th P type thin film transistor (TFT) T6 THValue also is stored in the first electric capacity (building-out capacitor) C1.The 3rd P type thin film transistor (TFT) T3 is the switch that general image element circuit all can possess, and is used for control data voltage V DataThe time of input.The one P type thin film transistor (TFT) T1 closes after first node A is precharged to the first power vd D with first node A during in initial reset phase.The 2nd P type thin film transistor (TFT) T2 is controlling photodiode D to the discharge time of first node A.

Fig. 5 is the signal waveform schematic diagram of the first embodiment of Organic Light Emitting Diode compensating circuit of the present invention.As shown in the figure, in the present embodiment, the circuit operation step of Organic Light Emitting Diode compensating circuit 1 can be divided into double teacher.

One, the initial reset phase of first node A:

The first control signal Reset[n] signal is Low, a P type thin film transistor (TFT) T1 conducting, first node A is precharged to the first power vd D.

Two, the initial reset phase of Section Point B:

The first control signal Reset[n] signal draws and is High, the one P type thin film transistor (TFT) the one P type thin film transistor (TFT) T1 closes, the second control signal Scan[n-1] with the 4th control signal Emit[n] signal then switches to Low, the 2nd P type thin film transistor (TFT) T2, the 4th P type thin film transistor (TFT) T4, the 5th P type thin film transistor (TFT) T5 and the 6th P type thin film transistor (TFT) T6 conducting, Section Point B is initialized to V TH_T6+ VSS.First node A is by the 2nd P type thin film transistor (TFT) T2 and photodiode D discharge simultaneously, and discharge current depends on the brightness of Organic Light Emitting Diode OLED assembly.

Three, V THThe detecting compensated stage:

The second control signal Scan[n-1] signal is continuously Low, the 4th control signal Emit[n] signal then draws and is High, the 6th P type thin film transistor (TFT) T6 closes, the 2nd P type thin film transistor (TFT) T2, the 4th P type thin film transistor (TFT) T4 and the 5th P type thin film transistor (TFT) T5 continue conducting, and Section Point B current potential can be charged to VDD-V TH_OLED-V TH-T5So that the 5th P type thin film transistor (TFT) T5 becomes closed condition from conducting state, Section Point B current potential also can be maintained at VDD-V TH_OLED-V TH-T5, finish V THCompensating movement.First node A also continues by the 2nd P type thin film transistor (TFT) T2 and photodiode D discharge in addition, and discharge current depends on the brightness of Organic Light Emitting Diode OLED assembly.

Four, pixel information current potential write phase:

The second control signal Scan[n-1] signal draws and is High, the 3rd control signal Scan[n] switch to Low, the 2nd P type thin film transistor (TFT) T2 and the 4th P type thin film transistor (TFT) T4 close, the 3rd P type thin film transistor (TFT) T3 conducting, carrying out the pixel data current potential writes, Section Point B is suspension joint (Floating) state at this moment, and first node A current potential is by V A 'Become data voltage V Data, its variable quantity is V Data-V A '(being negative value), Section Point B is subject to first node A capacitively coupled effect can become (VDD-V TH_OLED-V TH-T5)-(V A '-V Data).

Five, the Organic Light Emitting Diode OLED luminescence display stage:

The 3rd control signal Scan[n] switch to High, the 4th control signal Emit[n] signal then draws and is Low, the 3rd P type thin film transistor (TFT) T3 closes, the 6th P type thin film transistor (TFT) T6 conducting, drive the 5th P type thin film transistor (TFT) T5 of Organic Light Emitting Diode OLED, its On current has determined Organic Light Emitting Diode OLED luminosity, V Gate_T5=V B=(VDD-V TH_OLED-V TH-T5)-(V A '-V Data), V Source_T5=VDD-V OLED=VDD-[V TH_OLED+ V (f (V Data))], V (f (V Data)) when luminous the cross-pressure that increases by Organic Light Emitting Diode OLED assembly of meeting, with the data voltage V that writes DataBecome a funtcional relationship, can not change I because Organic Light Emitting Diode OLED assembly luminescence efficiency changes OLED=β/2* (V SG_T5-| V TH_T5|) 2=β/2*[(V A '-V Data)-V (f (V Data))] 2When Organic Light Emitting Diode OLED assembly luminescence efficiency descended, the photocurrent of photodiode D also can descend, so that VA ' becomes large, and I thus OLEDAlso can become large, can allow Organic Light Emitting Diode OLED assembly brighter, reach the effect of compensation.

For I-R Drop, AMOLED pixel away from the first power vd D, second source VSS signal input part, its the first power vd D, second source VSS that sees can become VDD-I*R, VSS+I*R, this means that also first node A can be precharged to first lower VDD-I*R level, then see through photodiode D and be discharged to higher VSS+I*R level, the cross-pressure that is to say photodiode D can diminish, electric current to first node A discharge also can diminish, so that VA ' is unlikely to diminish too much because of I-R Drop, reach the effect that compensation I-R Drop is arranged.

Fig. 6 is the circuit diagram of the second embodiment of Organic Light Emitting Diode compensating circuit of the present invention.Among the figure, Organic Light Emitting Diode compensating circuit 2 comprises seven N-type thin film transistor (TFT)s, the first capacitor C 1, the second capacitor C 2, the first control signal Reset[n], the second control signal Scan[n-1], the 3rd control signal Scan[n], the 4th control signal Emit[n], data voltage V Data, the first power vd D, second source VSS and Organic Light Emitting Diode OLED.In seven N-type thin film transistor (TFT)s, one of them uses as photodiode (Photo Diode) D, all the other are respectively the first N-type thin film transistor (TFT) T10, the second N-type thin film transistor (TFT) T20, the 3rd N-type thin film transistor (TFT) T30, the 4th N-type thin film transistor (TFT) T40, the 5th N-type thin film transistor (TFT) T50 and the 6th N-type thin film transistor (TFT) T60, the first N-type thin film transistor (TFT) T10, the second N-type thin film transistor (TFT) T20 and photodiode D are considered as a stabilization element U1 at this, the 4th N-type thin film transistor (TFT) T40, the 5th N-type thin film transistor (TFT) T50 and the 6th N-type thin film transistor (TFT) T60 are considered as a driver element U2 at this.Wherein the 5th N-type thin film transistor (TFT) T50 is used for driving Organic Light Emitting Diode OLED, all the other first N-type thin film transistor (TFT) T10, the second N-type thin film transistor (TFT) T20, the 3rd N-type thin film transistor (TFT) T30, the 4th N-type thin film transistor (TFT) T40 and the 6th N-type thin film transistor (TFT) T60 use as switch, the first capacitor C 1 is usefulness by way of compensation, and the second capacitor C 2 is used for storage data voltage V Data

In all TFT as switch, the 6th N-type thin film transistor (TFT) T60 is used for Section Point B being reset to VDD-V at Section Point B during in initial reset phase TH_T60, so that can be at follow-up V THAllow the 5th N-type thin film transistor (TFT) T50 conducting compensate action during the detecting compensated stage, the 6th N-type thin film transistor (TFT) T60 also must conducting when Organic Light Emitting Diode OLED is luminous.The 4th N-type thin film transistor (TFT) T40 allows the 5th N-type thin film transistor (TFT) T50 can form diode connection (Diode-connection), allows circuit when compensated stage, can produce the V of the 5th N-type thin film transistor (TFT) T50 THValue also is stored in the first electric capacity (building-out capacitor) C1.The 3rd N-type thin film transistor (TFT) T30 is the switch that general image element circuit all can possess, and is used for control data voltage V DataThe time of input.The first N-type thin film transistor (TFT) T10 closes first node A pre-arcing during in the starting stage at first node A to second source VSS.The second N-type thin film transistor (TFT) T20 is controlling photodiode D to the duration of charging of first node A.

Fig. 7 is the signal waveform schematic diagram of the second embodiment of Organic Light Emitting Diode compensating circuit of the present invention.As shown in the figure, in the present embodiment, the circuit operation step of Organic Light Emitting Diode compensating circuit 2 can be divided into double teacher.

One, the initial reset phase of first node A:

The first control signal Reset[n] signal is High, the first N-type thin film transistor (TFT) T10 conducting, first node A pre-arcing is to second source VSS.

Two, the initial reset phase of Section Point B:

The first control signal Reset[n] signal draws and is Low, the first N-type thin film transistor (TFT) T10 closes, the second control signal Scan[n-1] with the 4th control signal Emit[n] signal then switches to High, the second N-type thin film transistor (TFT) T20, the 4th N-type thin film transistor (TFT) T40, the 5th N-type thin film transistor (TFT) T50 and the 6th N-type thin film transistor (TFT) T60 conducting, Section Point B is initialized to VDD-V TH_T60First node A sees through the second N-type thin film transistor (TFT) T20 and photodiode D charging simultaneously, and charging current depends on the brightness of Organic Light Emitting Diode OLED assembly.

Three, V THThe detecting compensated stage:

The second control signal Scan[n-1] signal is continuously High, the 4th control signal Emit[n] signal then draws and is Low, the 6th N-type thin film transistor (TFT) T60 closes, the second N-type thin film transistor (TFT) T20, the 4th N-type thin film transistor (TFT) T40 and the 5th N-type thin film transistor (TFT) T50 continue conducting, and Section Point B current potential can be discharged to V TH-_T50+ V TH_OLED+ VSS is so that the 5th N-type thin film transistor (TFT) T50 becomes closed condition from conducting state, and Section Point B current potential also can be maintained at V TH-_T50+ V TH_OLED+ VSS finishes V THCompensating movement.First node A also continues by the second N-type thin film transistor (TFT) T20 and photodiode D charging in addition, and charging current depends on the brightness of Organic Light Emitting Diode OLED assembly.

Four, pixel information current potential write phase:

The second control signal Scan[n-1] signal draws and is Low, the 3rd control signal Scan[n] switch to High, the second N-type thin film transistor (TFT) T20 and the 4th N-type thin film transistor (TFT) T40 close, the 3rd N-type thin film transistor (TFT) T30 conducting, carrying out the pixel data current potential writes, Section Point B is suspension joint (Floating) state at this moment, and first node A current potential is by V A 'Become data voltage V Data, its variable quantity is V Data-V A '(be on the occasion of), Section Point B is subject to first node A capacitively coupled effect can become (V TH-_T50+ V TH_OLED+ VSS)+(V Data-V A ').

Five, the Organic Light Emitting Diode OLED luminescence display stage:

The 3rd control signal Scan[n] switch to Low, the 4th control signal Emit[n] signal then draws and is High, the 3rd N-type thin film transistor (TFT) T30 closes, the 6th N-type thin film transistor (TFT) T60 conducting, drive the 5th N-type thin film transistor (TFT) T50 of Organic Light Emitting Diode OLED, its On current has determined Organic Light Emitting Diode OLED luminosity, V GateT50=V B=(V TH-_T50+ V TH_OLED+ VSS)+(V Data-V A '), V Source_T50=V OLED+ VSS=V TH_OLED+ V (f (V Data))+VSS, V (f (V Data)) when luminous the cross-pressure that increases by Organic Light Emitting Diode OLED assembly of meeting, become a funtcional relationship with the data voltage that writes, can not change I because Organic Light Emitting Diode OLED assembly luminescence efficiency changes OLED=β/2* (V GS_T50-V TH_T50) 2=β/2* (V Data-V A '-V (f (V Data))) 2When Organic Light Emitting Diode OLED assembly luminescence efficiency descended, the photocurrent of photodiode D also can descend, so that VA ' diminishes, and Organic Light Emitting Diode I thus OLEDAlso can become large, can allow Organic Light Emitting Diode OLED assembly brighter, reach the effect of compensation.

For I-R Drop, AMOLED pixel away from the first power vd D, second source VSS signal input part, its the first power vd D, second source VSS that sees can become VDD-I*R, VSS+I*R, this means that also the first pre-arcing of first node A meeting is to higher VSS+I*R level, then see through photodiode D and charge to lower VDD-I*R level, the cross-pressure that is to say photodiode D can diminish, electric current to first node A charging also can diminish, so that VA ' is unlikely to become large too many because of I-R Drop, reach the effect that compensation I-R Drop is arranged.

Fig. 8 and Fig. 9 are respectively the first circuit diagram and the second circuit schematic diagram of circuit variation of the second embodiment of Organic Light Emitting Diode compensating circuit of the present invention.In the circuit shown in Figure 8, mainly be that contrary inclined to one side photodiode D is changed into reduced size and is suitable inclined to one side photodiode D.In the circuit shown in Figure 9, then be further photodiode D to be reduced into an optoelectronic switch Photo Switch with the second N-type thin film transistor (TFT) T20.

Comprehensively above-mentioned, Organic Light Emitting Diode compensating circuit of the present invention can solve the problems such as Organic Light Emitting Diode OLED brightness decay in the prior art, luminescence efficiency decline and I-R Drop.

The above only is illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be contained in the application's claim scope.

Claims (19)

1. an Organic Light Emitting Diode compensating circuit is characterized in that, comprises:
One first electric capacity, one end are a first node, and the other end is a Section Point;
One second electric capacity connects one first power supply and described first node;
One stabilization element, connect described the first power supply, a second source, one first control signal and one second control signal, described stabilization element comprises a first transistor, a transistor seconds and a photodiode, described the first transistor connects described transistor seconds and its junction is described first node, and described transistor seconds connects described photodiode;
One the 3rd transistor connects described first node, a data voltage and one the 3rd control signal;
One Organic Light Emitting Diode connects described the first power supply or described second source; And
One driver element, connect described the first power supply or described second source, described Section Point, described Organic Light Emitting Diode, described the second control signal and one the 4th control signal, described driver element comprises one the 4th transistor, one the 5th transistor and one the 6th transistor, the described the 4th a transistorized end connects the described the 5th a transistorized end and its junction is described Section Point, and the described the 4th transistorized other end then connects the described the 5th transistorized other end and described the 6th transistor.
2. Organic Light Emitting Diode compensating circuit as claimed in claim 1, it is characterized in that, described stabilization element connects described the first power supply and described the first control signal via described the first transistor, and connect described the second control signal via described transistor seconds, and connect described second source via the input end of described photodiode; Described driver element connects described the second control signal via described the 4th transistor, and connect described Organic Light Emitting Diode via described the 5th transistor, described Organic Light Emitting Diode then connects described the first power supply, and described driver element connects described the 4th control signal and described second source via described the 6th transistor again.
3. Organic Light Emitting Diode compensating circuit as claimed in claim 2, it is characterized in that, described the first transistor, described transistor seconds, described the 3rd transistor, described the 4th transistor, described the 5th transistor and described the 6th transistor-based are respectively one the one P type thin film transistor (TFT), one the 2nd P type thin film transistor (TFT), one the 3rd P type thin film transistor (TFT), one the 4th P type thin film transistor (TFT), one the 5th P type thin film transistor (TFT) and one the 6th P type thin film transistor (TFT).
4. Organic Light Emitting Diode compensating circuit as claimed in claim 3, it is characterized in that, the source electrode of a described P type thin film transistor (TFT) connects described the first power supply, the gate of a described P type thin film transistor (TFT) connects described the first control signal, and the drain of a described P type thin film transistor (TFT) connects the source electrode of described first node, described the 2nd P type thin film transistor (TFT) and the drain of described the 3rd P type thin film transistor (TFT).
5. Organic Light Emitting Diode compensating circuit as claimed in claim 3, it is characterized in that, the source electrode of described the 2nd P type thin film transistor (TFT) connects the drain of described first node, a described P type thin film transistor (TFT) and the drain of described the 3rd P type thin film transistor (TFT), the gate of described the 2nd P type thin film transistor (TFT) connects described the second control signal, and the drain of described the 2nd P type thin film transistor (TFT) connects the output terminal of described photodiode.
6. Organic Light Emitting Diode compensating circuit as claimed in claim 3, it is characterized in that, the source electrode of described the 3rd P type thin film transistor (TFT) connects described data voltage, the gate of described the 3rd P type thin film transistor (TFT) connects described the 3rd control signal, and the drain of described the 3rd P type thin film transistor (TFT) connects the drain of described first node, a described P type thin film transistor (TFT) and the source electrode of described the 2nd P type thin film transistor (TFT).
7. Organic Light Emitting Diode compensating circuit as claimed in claim 3, it is characterized in that, the source electrode of described the 4th P type thin film transistor (TFT) connects the gate of described Section Point and described the 5th P type thin film transistor (TFT), the gate of described the 4th P type thin film transistor (TFT) connects described the second control signal, and the drain of described the 4th P type thin film transistor (TFT) connects the drain of described the 5th P type thin film transistor (TFT) and the source electrode of described the 6th P type thin film transistor (TFT).
8. Organic Light Emitting Diode compensating circuit as claimed in claim 3, it is characterized in that, the source electrode of described the 5th P type thin film transistor (TFT) connects the output terminal of described Organic Light Emitting Diode, the input end of described Organic Light Emitting Diode then is connected to described the first power supply, the gate of described the 5th P type thin film transistor (TFT) connects the source electrode of described Section Point and described the 4th P type thin film transistor (TFT), and the drain of described the 5th P type thin film transistor (TFT) connects the drain of described the 4th P type thin film transistor (TFT) and the source electrode of described the 6th P type thin film transistor (TFT).
9. Organic Light Emitting Diode compensating circuit as claimed in claim 3, it is characterized in that, the source electrode of described the 6th P type thin film transistor (TFT) connects the drain of described the 4th P type thin film transistor (TFT) and the drain of described the 5th P type thin film transistor (TFT), the gate of described the 6th P type thin film transistor (TFT) connects described the 4th control signal, and the drain of described the 6th P type thin film transistor (TFT) connects described second source.
10. Organic Light Emitting Diode compensating circuit as claimed in claim 3 is characterized in that, a described P type thin film transistor (TFT) in order to described the first power source charges to described first node; Described the 2nd P type thin film transistor (TFT) is in order to control described photodiode to the time of described first node discharge; Described the 3rd P type thin film transistor (TFT) is in order to control the time of described data voltage input; Described the 4th P type thin film transistor (TFT) is one current potential to be stored in described the first electric capacity when compensated stage; Described the 5th P type thin film transistor (TFT) is in order to drive described Organic Light Emitting Diode; Described the 6th P type thin film transistor (TFT) is in order to the potential difference (PD) on described second source and described the 6th P type thin film transistor (TFT) is charged on the described Section Point when initial reset phase.
11. Organic Light Emitting Diode compensating circuit as claimed in claim 1, it is characterized in that, described stabilization element connects described second source and described the first control signal via described the first transistor, and connect described the second control signal via described transistor seconds, and connect described the first power supply via the output terminal of described photodiode; Described driver element connects described the second control signal via described the 4th transistor, and connect described Organic Light Emitting Diode via described the 5th transistor, described Organic Light Emitting Diode then connects described second source, and described driver element connects described the 4th control signal and described the first power supply via described the 6th transistor again.
12. Organic Light Emitting Diode compensating circuit as claimed in claim 11, it is characterized in that, described the first transistor, described transistor seconds, described the 3rd transistor, described the 4th transistor, described the 5th transistor and described the 6th transistor are respectively one first N-type thin film transistor (TFT), one second N-type thin film transistor (TFT), one the 3rd N-type thin film transistor (TFT), one the 4th N-type thin film transistor (TFT), one the 5th N-type thin film transistor (TFT) and one the 6th N-type thin film transistor (TFT).
13. Organic Light Emitting Diode compensating circuit as claimed in claim 12, it is characterized in that, the source electrode of described the first N-type thin film transistor (TFT) connects described second source, the gate of described the first N-type thin film transistor (TFT) connects described the first control signal, and the drain of described the first N-type thin film transistor (TFT) connects the source electrode of described first node, described the second N-type thin film transistor (TFT) and the source electrode of described the 3rd N-type thin film transistor (TFT).
14. Organic Light Emitting Diode compensating circuit as claimed in claim 12, it is characterized in that, the source electrode of described the second N-type thin film transistor (TFT) connects the drain of described first node, described the first N-type thin film transistor (TFT) and the source electrode of described the 3rd N-type thin film transistor (TFT), the gate of described the second N-type thin film transistor (TFT) connects described the second control signal, and the drain of described the second N-type thin film transistor (TFT) connects the input end of described photodiode.
15. Organic Light Emitting Diode compensating circuit as claimed in claim 12, it is characterized in that, the drain of described the 3rd N-type thin film transistor (TFT) connects described data voltage, the gate of described the 3rd N-type thin film transistor (TFT) connects described the 3rd control signal, and the source electrode of described the 3rd N-type thin film transistor (TFT) connects the drain of described first node, described the first N-type thin film transistor (TFT) and the source electrode of described the second N-type thin film transistor (TFT).
16. Organic Light Emitting Diode compensating circuit as claimed in claim 12, it is characterized in that, the source electrode of described the 4th N-type thin film transistor (TFT) connects the gate of described Section Point and described the 5th N-type thin film transistor (TFT), the gate of described the 4th N-type thin film transistor (TFT) connects described the second control signal, and the drain of described the 4th N-type thin film transistor (TFT) connects the drain of described the 5th N-type thin film transistor (TFT) and the source electrode of described the 6th N-type thin film transistor (TFT).
17. Organic Light Emitting Diode compensating circuit as claimed in claim 12, it is characterized in that, the drain of described the 5th N-type thin film transistor (TFT) connects the drain of described the 4th N-type thin film transistor (TFT) and the source electrode of described the 6th N-type thin film transistor (TFT), the gate of described the 5th N-type thin film transistor (TFT) connects the source electrode of described Section Point and described the 4th N-type thin film transistor (TFT), the source electrode of described the 5th N-type thin film transistor (TFT) connects the input end of described Organic Light Emitting Diode, and the output terminal of described Organic Light Emitting Diode then is connected to described second source.
18. Organic Light Emitting Diode compensating circuit as claimed in claim 12, it is characterized in that, the source electrode of described the 6th N-type thin film transistor (TFT) connects the drain of described the 4th N-type thin film transistor (TFT) and the drain of described the 5th N-type thin film transistor (TFT), the gate of described the 6th N-type thin film transistor (TFT) connects described the 4th control signal, and the drain of described the 6th N-type thin film transistor (TFT) connects described the first power supply.
19. Organic Light Emitting Diode compensating circuit as claimed in claim 12 is characterized in that, described the first N-type thin film transistor (TFT) is in order to be discharged to described second source with described first node; Described the second N-type thin film transistor (TFT) is in order to control described photodiode to the time of described first node charging; Described the 3rd N-type thin film transistor (TFT) is in order to control the time of described data voltage input; Described the 4th N-type thin film transistor (TFT) is one current potential to be stored in described the first electric capacity when compensated stage; Described the 5th N-type thin film transistor (TFT) is in order to drive described Organic Light Emitting Diode; Described the 6th N-type thin film transistor (TFT) is to be charged on the described Section Point in order to the current potential after described the first power supply being cut the potential difference (PD) on described the 6th N-type thin film transistor (TFT) when initial reset phase.
CN201110284532.9A 2011-08-16 2011-09-22 Compensation circuit of organic light emitting diode CN102956191B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW100129312 2011-08-16
TW100129312A TWI442374B (en) 2011-08-16 2011-08-16 Compensation circuit of organic light-emitting diode

Publications (2)

Publication Number Publication Date
CN102956191A true CN102956191A (en) 2013-03-06
CN102956191B CN102956191B (en) 2015-04-01

Family

ID=47712170

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110284532.9A CN102956191B (en) 2011-08-16 2011-09-22 Compensation circuit of organic light emitting diode

Country Status (3)

Country Link
US (1) US8604705B2 (en)
CN (1) CN102956191B (en)
TW (1) TWI442374B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105913792A (en) * 2016-06-30 2016-08-31 京东方科技集团股份有限公司 Pixel circuit, semiconductor camera detection circuit and display device
CN108492770A (en) * 2018-03-27 2018-09-04 京东方科技集团股份有限公司 A kind of pixel compensation circuit, its driving method and display panel, display device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI441137B (en) * 2011-07-08 2014-06-11 Hannstar Display Corp Compensation circuit for keeping luminance intensity of diode
CN102708786B (en) * 2011-08-25 2014-12-10 京东方科技集团股份有限公司 Active matrix organic light emitting diode (AMOLED) pixel unit driving circuit and method, pixel unit and display device
CN102708787A (en) * 2011-08-25 2012-10-03 京东方科技集团股份有限公司 Active matrix organic light emitting diode (AMOLED) pixel unit driving circuit and method, pixel unit and display device
US10043794B2 (en) * 2012-03-22 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN102708798B (en) * 2012-04-28 2015-05-13 京东方科技集团股份有限公司 Pixel unit driving circuit, driving method, pixel unit and display device
CN103971643B (en) * 2014-05-21 2016-01-06 上海天马有机发光显示技术有限公司 A kind of organic light-emitting diode pixel circuit and display device
CN104318897B (en) * 2014-11-13 2017-06-06 合肥鑫晟光电科技有限公司 A kind of image element circuit, organic EL display panel and display device
TWI555002B (en) * 2015-04-02 2016-10-21 友達光電股份有限公司 Display panel and pixel circuit thereof
KR20160134014A (en) 2015-05-14 2016-11-23 주식회사 실리콘웍스 Power Switching Circuit and Method of Controlling Power Switching Circuit
TWI560676B (en) * 2015-12-07 2016-12-01 Au Optronics Corp Pixel circuit and driving method thereof
US10431164B2 (en) * 2016-06-16 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
JP2019525209A (en) * 2016-07-20 2019-09-05 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. Light emission control circuit, display device including light emission control circuit, and driving method thereof
CN107230451B (en) * 2017-07-11 2018-01-16 深圳市华星光电半导体显示技术有限公司 A kind of AMOLED pixel-driving circuits and image element driving method
US10475385B2 (en) * 2018-02-28 2019-11-12 Shenzhen China Star Optoelectronics Technology Co., Ltd. AMOLED pixel driving circuit and driving method capable of ensuring uniform brightness of the organic light emitting diode and improving the display effect of the pictures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1517965A (en) * 2003-01-21 2004-08-04 三星Sdi株式会社 Luminous display, driving method and its picture element circuit and display device
WO2006054189A1 (en) * 2004-11-16 2006-05-26 Koninklijke Philips Electronics N.V. Active matrix display devices
CN101286298A (en) * 2007-04-10 2008-10-15 三星Sdi株式会社 Pixel, organic light emitting display using the same, and associated methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4484451B2 (en) * 2003-05-16 2010-06-16 京セラ株式会社 Image display device
KR100646935B1 (en) * 2004-06-24 2006-11-23 삼성에스디아이 주식회사 Light emitting display
US8207918B2 (en) * 2008-06-11 2012-06-26 Hitachi Displays, Ltd. Image display device having a set period during which a step signal is supplied at different levels to provide a uniform display

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1517965A (en) * 2003-01-21 2004-08-04 三星Sdi株式会社 Luminous display, driving method and its picture element circuit and display device
WO2006054189A1 (en) * 2004-11-16 2006-05-26 Koninklijke Philips Electronics N.V. Active matrix display devices
CN101286298A (en) * 2007-04-10 2008-10-15 三星Sdi株式会社 Pixel, organic light emitting display using the same, and associated methods

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105913792A (en) * 2016-06-30 2016-08-31 京东方科技集团股份有限公司 Pixel circuit, semiconductor camera detection circuit and display device
WO2018000927A1 (en) * 2016-06-30 2018-01-04 京东方科技集团股份有限公司 Pixel circuit, semiconductor camera testing circuit, and display device
CN105913792B (en) * 2016-06-30 2019-01-22 京东方科技集团股份有限公司 A kind of pixel circuit, semiconductor camera detection circuit, display device
US10205900B2 (en) 2016-06-30 2019-02-12 Boe Technology Group Co., Ltd. Pixel circuit, semiconductor camera detection circuit and display device
CN108492770A (en) * 2018-03-27 2018-09-04 京东方科技集团股份有限公司 A kind of pixel compensation circuit, its driving method and display panel, display device

Also Published As

Publication number Publication date
US20130043796A1 (en) 2013-02-21
US8604705B2 (en) 2013-12-10
CN102956191B (en) 2015-04-01
TW201310425A (en) 2013-03-01
TWI442374B (en) 2014-06-21

Similar Documents

Publication Publication Date Title
US9741292B2 (en) Method and system for programming and driving active matrix light emitting device pixel having a controllable supply voltage
US9728135B2 (en) Voltage programmed pixel circuit, display system and driving method thereof
US9761177B2 (en) Organic light emitting display device
US9666131B2 (en) Pixel circuit and display
US8531361B2 (en) Organic light emitting diode display and method of driving the same
US20180301092A1 (en) Pixel driver circuit, pixel driving method, display panel and display device
US20140375705A1 (en) Method and system for driving a light emitting device display
CN103971640B (en) A kind of pixel-driving circuit and driving method thereof and display device
CN103531151B (en) OLED pixel circuit and driving method, display device
CN102254510B (en) Voltage compensation type pixel circuit of active matrix organic light emitting diode display device
CN103778889B (en) Organic light emitting diode circuit and driving method thereof
CN102298900B (en) Organic light emitting display and driving method thereof
CN103137067B (en) Organic LED display device and driving method thereof
EP3188174A1 (en) Pixel drive circuit and drive method therefor, display panel and display apparatus
US9214506B2 (en) Pixel unit driving circuit, method for driving pixel unit driving circuit and display device
US9355595B2 (en) Pixel unit driving circuit having an erasing transistor and matching transistor, and method thereof
CN102651194B (en) Voltage driving pixel circuit, driving method thereof and display panel
CN103700338B (en) Image element circuit and driving method thereof and adopt the organic light-emitting display device of this circuit
TWI573117B (en) Pixel circuit for active-matrix organic light-emitting diode display
US9984626B2 (en) Pixel circuit for organic light emitting diode, a display device having pixel circuit and driving method of pixel circuit
US9640109B2 (en) Pixel driving circuit, pixel driving method, display panel and display device
CN101563720B (en) Light-emitting display device
CN101978415B (en) Display panel with matrix form pixels
JP5078236B2 (en) Display device and driving method thereof
WO2017031909A1 (en) Pixel circuit and drive method thereof, array substrate, display panel, and display apparatus

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
C14 Grant of patent or utility model