CN102912312A - Method for improving crystallinity of metal film and metal film material prepared by method - Google Patents

Method for improving crystallinity of metal film and metal film material prepared by method Download PDF

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CN102912312A
CN102912312A CN 201110227485 CN201110227485A CN102912312A CN 102912312 A CN102912312 A CN 102912312A CN 201110227485 CN201110227485 CN 201110227485 CN 201110227485 A CN201110227485 A CN 201110227485A CN 102912312 A CN102912312 A CN 102912312A
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thin film
metal thin
substrate
step
method
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CN 201110227485
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林宽锯
许纯渊
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林宽锯
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Abstract

The invention relates to a method for improving the crystallinity of a metal film and a metal film material prepared by the method. The method comprises the following steps: (a) forming a metal film on a substrate; (b) after the step (a), placing the substrate with the metal film on a base; and (c) after the step (b), providing microwave to the base, wherein the microwave is absorbed by the base quickly and converted into heat energy, and the heat energy is transferred to the metal film on the substrate uniformly, so that the crystallinity of the metal film is improved and the crystallized metal film is formed; and the base in the step (b) is prepared from a group consisting of the following materials: a semiconductor material, graphite and carbon fiber. The invention further provides the metal film material, which is prepared by the method and has (111) preferred orientation.

Description

提升金属薄膜结晶性的方法及其方法制得的金属薄膜材料 A method to enhance the crystallinity of the metal thin film and a metal thin film obtained by the process materials

技术领域 FIELD

[0001] 本发明涉及一种结晶方法,特别是涉及一种利用微波(microwave)提升金属薄膜结晶性(crystallinity)的方法及其方法所制得的具有(111)优选方位(preferredorientation)的金属薄膜材料。 [0001] The present invention relates to a crystallization method, in particular, it relates to a microwave (Microwave) enhancing film crystalline metal (Crystallinity) method and the method obtained with (111) preferred orientation (preferredorientation) of the metal thin film material.

背景技术 Background technique

[0002] 近年来,利用微波来提升金(Au)薄膜的结晶性等研究已见有许多相关报导。 [0002] In recent years, such as crystalline gold (Au) film using microwaves to enhance the already saw a lot of stories.

[0003] Hidekazu Sueyoshi 等人于Material Transactions, Vol. 48, No. 3 (2007) pp. 531to 537 揭不出Microwave heating of Thin Au Film 一文。 [0003] Hidekazu Sueyoshi et al Material Transactions, Vol. 48, No. 3 (2007) pp. 531to 537 exposing not Microwave heating of Thin Au Film article. 首先,Hidekazu Sueyoshi 等人是利用派镀法(sputtering)或蒸镀法(evaporation) —尺寸为IOmmX 13mmX Imm的石英(quartz)板上形成一厚度约35nm的Au薄膜;进一步地,将该形成有该Au薄膜的石英板放置于一微波腔体的一石英座上,以1800W的输出功率来对该微波腔体提供微波,进而提升该Au薄膜的结晶性。 First, Hidekazu Sueyoshi et al send using plating (sputtering) or vapor deposition (evaporation) - formed in a thickness of approximately 35nm of Au thin film IOmmX 13mmX Imm size quartz (Quartz) plate; further, the formed the Au thin film is placed in a quartz crystal plate seat of a microwave cavity, 1800W output power to the microwave cavity providing a microwave, thereby improving the crystallinity of the Au film.

[0004] Hidekazu Sueyos hi 等人所制得的Au 薄膜经X光绕射(X_ray diffraction, XRD)分析显示,经微波加热前的Au薄膜明显有一(111)面绕射信号峰,而其半高宽(full-widthat half maximum ;FffHM)约0. 544° ;反观经微波加热后的Au薄膜,其(111)面绕射信号峰明显增强,此外,半高宽降低至0.348°。 [0004] Hidekazu Sueyos hi et al Au thin film obtained by X-ray diffraction (X_ray diffraction, XRD) analysis, the Au thin film prior to microwave heating is obviously a (111) plane diffraction peak signal, and having a half width (full-widthat half maximum; FffHM) from about 0. 544 °; the other hand, the Au thin film by microwave heating, which is (111) plane diffraction peak signal significantly enhanced, in addition, to reduce the half width of 0.348 °. 虽然本篇报导所揭示的Au薄膜具有(111)优选方位;然而,其厚度已达35nm,对于应用在太阳能电池(solar cell)的透明导电玻璃(transparent conductive glass)而言,其穿透率(transmittance)将无法满足太阳能电池的要求。 Although this story disclosed Au thin film having a (111) preferred orientation; however, the thickness reached 35nm, for use in a solar cell (solar cell) of the transparent conductive glass (transparent conductive glass), its transmittance ( Transmittance) will not meet the requirements of the solar cell.

[0005]此外,Ziping Cao 等人于J. Mater. Res. , Vol. 24, No. I, Jan 2009 揭不出Microwave heating behavior of nanocrystalline Au thin films in single-modecavity—文。 [0005] Further, Ziping Cao et al., J. Mater. Res., Vol. 24, No. I, Jan 2009 not exposing Microwave heating behavior of nanocrystalline Au thin films in single-modecavity- text. 该文所探讨的议题在于,最大磁场(magnetic field)与最大电场(electricfield)对金属材料的升温效果。 The issues discussed hereinabove in that the warming effect of the maximum magnetic field (magnetic field) and the maximum electric field (electricfield) of metallic material. 首先,Ziping Cao等人利用离子派镀法(ion sputtering)在数个尺寸皆为IOmmX 7. 5mmXO. 5mm的石英基板上,分别沉积一厚度为45nn、一厚度为133nm及一厚度为407nm的Au薄膜;进一走地,该等Au薄膜是被施予微波加热,并借以提升该等Au薄膜的结晶性;其中,部分Au薄膜是在最大电场的条件下被施予微波加热,剩余Au薄膜是在最大磁场的条件下被施予微波加热。 First, Ziping Cao et al sent by the ion plating method (ion sputtering) in a number of sizes are all IOmmX 7. 5mmXO. 5mm quartz substrate, a thickness of each deposited 45nn, a thickness of 133nm and 407nm thickness of a Au film; gone into, the Au thin film is administered such microwave heating, and in order to enhance the crystallinity of these Au film; wherein the Au thin film is part of the microwave heating administered at the maximum electric field, the remaining Au thin film microwave heating is administered at a maximum magnetic field.

[0006] 该厚度为133nm的Au薄膜(以下称试片T2)在微波加热前所得到的XRD图已显示有(111)面绕射信号峰,且该试片T2在最大磁场条件下被施予微波加热后所得到的XRD图,显示有(111)面绕射信号峰增强的现象。 [0006] The thickness of the Au thin film of 133nm (hereinafter referred to as test piece T2) before the XRD diagram obtained by microwave heating has been shown to (111) plane diffraction peak signal, and T2 is applied to the test strip at a maximum magnetic field conditions XRD view of the microwave heating to the obtained showed (111) plane diffraction peak signal enhancement phenomenon. 此外,参图I,该试片T2在微波加热前所取得的扫描式电子显微镜(scanning electron microscope ;SEM)表面形貌图,显不有裂缝存在。 In addition, reference to FIG I, the test piece was heated in a microwave T2 made before a scanning electron microscope (scanning electron microscope; SEM) the surface topography, there exist no significant cracks. 又,参图2,该试片T2在最大磁场条件下被施予微波加热后所取得的SEM表面形貌图,显示出有Au薄膜的晶粒成长(grain growth)。 Also, reference to Figure 2, the test strip T2 is administered SEM view of the surface morphology of the microwave heating made under the maximum magnetic field conditions, grain growth showed an Au thin film (grain growth). 然而,图2却明显显示出,该Au薄膜为非连续膜。 However, FIG. 2 shows obviously, the Au film is in a continuous film. 就该T2试片的厚度而言,其厚度过大,应影响其穿透率,而该Au薄膜为非连续膜,也将影响该试片T2的导电性(conductivity)。 In relation to the thickness T2 of the test piece, the thickness thereof is too large, it should not affect the transmittance, and the Au thin film is a discontinuous film, it will also affect the conductivity (Conductivity) The test piece T2. 因此,Ziping Cao等人所发表的Au薄膜虽然具有(111)优选方位,却无法满足太阳能电池的需求。 Consequently, Au film Ziping Cao et al., Published although having a (111) preferred orientation, but can not meet the demand for solar cells.

[0007] 经上述说明可知,提升金属薄膜的结晶性并改善结晶化金属薄膜的穿透率或使结晶化金属薄膜呈连续膜的结构,以扩大结晶化金属薄膜的应用性,是此技术领域者所需改进的课题。 [0007] understood by the above description, the crystallinity of the metal thin film to enhance and improve the transmittance of the metal thin film is crystallized or the crystal structure of the metal thin film as a continuous film, in order to expand the application of crystalline metal thin film, is in this technical field who needed to improve the issue.

发明内容 SUMMARY

[0008] 本发明的目的是在提供一种利用微波提升金属薄膜结晶性的方法。 [0008] The object of the present invention is to provide a method of using a microwave to enhance the crystallinity of the metal thin film.

[0009] 本发明的另一目的,是在提供一种具有(111)优选方位的金属薄膜材料。 [0009] Another object of the present invention is to provide a (111) preferred orientation of the metal thin film material.

[0010] 本发明的目的及解决其技术问题是采用以下技术方案来实现的。 [0010] objects and to solve the technical problem of the invention is achieved by the following technical solutions. 依据本发明提出的一种利用微波提升金属薄膜结晶性的方法,其包含以下步骤:在一个基板上形成一层金属薄膜;在该步骤(a)后,将该形成有该金属薄膜的基板放置于一个基底上;及在该步骤 According to the present invention proposed a method utilizing microwaves to enhance the crystallinity of the metal thin film, comprising the steps of: forming a layer of a metal thin film on a substrate; after the step (A), placing the substrate formed with the metal thin film on a substrate; and at step

(b)后,对该基底提供一微波,该基底迅速地吸收该微波以转变成一热能,并均匀地传递该热能至该基板上的金属薄膜,进而提升该金属薄膜的结晶性并形成一层结晶化金属薄膜;其中,该步骤(b)的基底是由一选自下列所构成的群组的材料所制成:半导体材料、石墨及碳纤维。 After (b), the substrate provides a microwave, the substrate rapidly absorbs the microwave to be converted into a thermal energy, and the energy is transmitted uniformly to the metal thin film on the substrate, thereby improving the crystallinity of the metal thin film layer is formed, and crystallizing the metal thin film; wherein the substrate in step (b) is made of a material selected from the group consisting of: a semiconductor material, graphite, and carbon fibers.

[0011] 本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 [0011] objects and solve the technical problem of the present invention can also be further achieved by the following technical measures.

[0012] 较佳地,前述的提升金属薄膜结晶性的方法,其中该基底的面积是大于等于该基板上的金属薄膜的面积,且该基底的面积与该基板上的金属薄膜的面积相互重叠。 [0012] Preferably, the method to enhance the crystallinity of the metal thin film, wherein the area of ​​the substrate is not less than the area of ​​the metal thin film on the substrate, the substrate and the area of ​​overlap with the area of ​​the metal thin film on the substrate .

[0013] 较佳地,前述的提升金属薄膜结晶性的方法,其中该半导体材料是硅。 [0013] Preferably, the lifting of the thin-film crystalline metal, wherein the semiconductor material is silicon.

[0014] 较佳地,前述的提升金属薄膜结晶性的方法,其中该步骤(C)的基底是设置于一个真空腔体内。 [0014] Preferably, the above-described method to enhance the crystallinity of the metal thin film, wherein the substrate in step (C) is disposed in a vacuum chamber.

[0015] 较佳地,前述的提升金属薄膜结晶性的方法,其中在实施该步骤(C)时,该真空腔体的工作压力是低于等于O. 25Torr。 [0015] Preferably, the lifting of the crystalline metal thin film, wherein in practicing the step (C), the working pressure in the vacuum chamber is lower than or equals O. 25Torr.

[0016] 较佳地,前述的提升金属薄膜结晶性的方法,其中该步骤(C)的微波是经由一个电源供应器提供一介于750W〜2000W间的输出功率。 [0016] Preferably, the lifting of the crystalline metal thin film, wherein the microwave step (C) is to provide a power supply via a power output interposed between 750W~2000W.

[0017] 较佳地,前述的提升金属薄膜结晶性的方法,其中该步骤(a)的金属薄膜是由一选自下列所构成的群组的金属所制成:金、钯,及铜;该步骤(a)的基板是由一选自下列所构成的群组的材料所制成:玻璃及石英。 [0017] Preferably, the lifting of the crystallinity of the metal thin film, wherein the step (a) is a metal thin film is made of a metal selected from the group consisting of the following: gold, palladium, and copper; the substrate in step (a) is made of a material selected from the group consisting of: glass and quartz.

[0018] 较佳地,前述的提升金属薄膜结晶性的方法,其中该步骤(a)的金属薄膜是由金所制成,以致于该步骤(c)的结晶化金属薄膜是一面心立方晶体结构并具有(111)优选方位。 [0018] Preferably, the metal thin film to enhance the crystallinity, wherein the step (a) is a metal thin film is made of gold, such that the step (c) crystallization of the metal thin film on one side is centered cubic crystal structure and having a (111) preferred orientation.

[0019] 较佳地,前述的提升金属薄膜结晶性的方法,其中该步骤(a)的金属薄膜是由钯所制成,以致于该步骤(c)的结晶化金属薄膜是一面心立方晶体结构并具有(111)优选方位。 [0019] Preferably, the crystallinity of the metal thin film to enhance the aforementioned methods, wherein the step (a) is a metal thin film is made of palladium, the metal thin film so that the crystallization in step (c) is a side fcc structure and having a (111) preferred orientation.

[0020] 较佳地,前述的提升金属薄膜结晶性的方法,其中该步骤(a)的金属薄膜的厚度是小于等于20nm。 [0020] Preferably, the lifting of the crystalline metal thin film, wherein the thickness of the metal thin film in step (a) is less than or equal 20nm.

[0021] 本发明的目的及解决其技术问题还采用以下技术方案来实现。 [0021] objects and solve the technical problem of the invention is also achieved by the following technical solution. 依据本发明提出的一种金属薄膜材料,其包含:一个基板,呈透光性;及一层形成于该基板上的结晶化金属薄膜,该结晶化金属薄膜是一面心立方晶体结构,且该结晶化金属薄膜的面心立方晶体结构具有(111)优选方位;其中,该结晶化金属薄膜的厚度是小于等于20nm,且该结晶化金属薄膜是由一选自下列所构成的群组的金属所制成:金,及钯。 Made of a metal thin film material according to the present invention, comprising: a substrate, a translucent shape; and a metal layer formed on a crystalline thin film on the substrate, the metal thin film is crystallized face centered cubic crystal structure, and the face-centered cubic crystal structure of the crystalline metal thin film having a (111) preferred orientation; wherein the thickness of the metal film is 20 nm or less is crystallized, and the crystallized metal group is formed by a thin metal film selected from the group consisting of the following made of: gold, and palladium.

[0022] 本发明与现有技术相比具有明显的优点和有益效果。 [0022] The prior art and the present invention has obvious advantages and beneficial effects compared. 借由上述技术方案,本发明提升金属薄膜结晶性的方法及其方法制得的金属薄膜材料至少具有下列优点及有益效果:本发明可提升金属薄膜的结晶性并改善结晶化金属薄膜的穿透率,或使结晶化金属薄膜呈连续膜的结构,以扩大结晶化金属薄膜的应用性。 The method by means of the above technical solutions, the present invention is to enhance the crystallinity of the metal thin film and the metal thin film obtained by the process material having at least the following advantages and beneficial effects: the present invention can improve the crystallinity of the metal thin film and to improve the penetration of the metal thin film is crystallized rate, or to the metal thin film was crystallized continuous film structure, in order to expand the application of the metal thin film is crystallized.

[0023] 上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。 [0023] The above description is only an overview of the technical solution of the present invention, in order to more fully understood from the present invention, but may be implemented in accordance with the contents of the specification, and in order to make the aforementioned and other objects, features and advantages of the present invention can be more apparent from the following Patent cited preferred embodiments accompanied with figures are described in detail below.

附图说明 BRIEF DESCRIPTION

[0024] 图I是一SEM表面形貌图,说明Ziping Cao等人所公开的Au薄膜于微波加热前的表面形貌; [0024] Figure I is a SEM surface topography, surface topography described before Au thin film Ziping Cao et al disclosed in the microwave heating;

[0025] 图2是一SEM表面形貌图,说明Ziping Cao等人所公开的Au薄膜于微波加热后的表面形貌; [0025] FIG 2 is a SEM surface topography, the surface topography described Au thin film Ziping Cao et al disclosed in the microwave heating;

[0026] 图3是一流程图,说明本发明利用微波提升金属薄膜结晶性的方法的一较佳实施例; [0026] FIG. 3 is a flow chart illustrating the method of the present invention using microwaves to enhance the crystallinity of the metal thin film of a preferred embodiment;

[0027] 图4是图3的一步骤(C)的局部放大图,说明本发明于实施该较佳实施例的方法时的微波与一基底、一基板及一金属薄膜间的传递关系; [0027] FIG. 4 is a step of FIG. 3 (C) is a partially enlarged diagram illustrating the relationship between the transmission embodiment in the microwave at which the method of the preferred embodiment with a substrate, a substrate and a metal thin film of the present invention;

[0028] 图5是一XRD影像图(image),说明由本发明利用微波提升金属薄膜结晶性的方法的一比较例I (CEl)所制得的一Cu薄膜材料的结晶状态; [0028] FIG. FIG. 5 is an XRD image (image), the present invention is illustrated by using a microwave method of Comparative Example I lift a metal thin film crystalline (CEl) a crystalline state of a Cu thin film material is prepared;

[0029] 图6是一XRD影像图,说明由本发明利用微波提升金属薄膜结晶性的方法的一具体例I (El)所制得的一结晶化Cu薄膜材料的结晶状态; [0029] FIG. 6 is an XRD image diagram illustrating the use of microwave by the method of the present invention to enhance the crystallinity of the metal thin film of a specific embodiment of I (El) prepared by crystallization of a Cu thin film material is a crystalline state;

[0030] 图7是一XRD图,说明由本发明利用微波提升金属薄膜结晶性的方法的一比较例 [0030] FIG. 7 is an XRD pattern described by the present invention utilizes a microwave Comparative Example enhance metal thin film crystalline

2 (CE2)与一具体例2 (E2)所分别制得的一Pd薄膜材料的晶体结构; 2 (CE2) crystal structure of a Pd thin film material with a specific example 2 (E2) respectively obtained;

[0031] 图8是一XRD影像图,说明由本发明该比较例2 (CE2)所制得的一Pd薄膜材料的结晶状态; [0031] FIG. 8 is an XRD image diagram illustrating the crystalline state 2 (CE2) a Pd film material prepared according to the present invention, the comparison;

[0032] 图9是一XRD影像图,说明由本发明该具体例2 (E2)所制得的一结晶化Pd薄膜材料的结晶状态; [0032] FIG. 9 is an image diagram XRD described in Example 2 (E2) crystallizing a Pd thin film materials prepared by the present invention, the particular crystalline state;

[0033] 图10是一SEM表面影像图,说明由本发明利用微波提升金属薄膜结晶性的方法的一比较例3(CE3)所制得的一Au薄膜材料的表面形貌; [0033] FIG 10 is a SEM image of the surface view of the present invention is illustrated by a comparative example utilizing a microwave lifting Au surface topography (the CE3) prepared by the method of film material 3, a metal thin film crystallinity;

[0034] 图11是一SEM表面影像图,说明由本发明利用微波提升金属薄膜结晶性的方法的一比较例4(CE4)所制得的一Au薄膜材料的表面形貌; [0034] FIG 11 is a SEM image of the surface view of the present invention is illustrated by a comparison using microwaves to enhance a surface morphology of Au thin film material of Example 4 (CE4) prepared by the method of the metal thin film crystallinity;

[0035] 图12是一SEM表面影像图,说明由本发明利用微波提升金属薄膜结晶性的方法的一具体例3(E3)所制得的一结晶化Au薄膜材料的表面形貌; [0035] FIG 12 is a SEM image of the surface view of the present invention is illustrated by using microwaves to enhance the surface topography (E3) a crystallization of Au thin film material prepared in a specific embodiment of the method of the metal thin film crystalline 3;

[0036] 图13是一XRD图,说明由本发明该比较例3 (CE3)所制得的Au薄膜材料的晶体结构; [0036] FIG. 13 is an XRD pattern described (the CE3) are compared by the crystal structure of the present invention 3 Au film material is prepared;

[0037] 图14是一XRD影像图,说明由本发明该比较例3(CE3)所制得的Au薄膜材料的结晶状态;[0038] 图15是一XRD图,说明由本发明该具体例3 (E3)所制得的结晶化Au薄膜材料的晶体结构; [0037] FIG. 14 is an XRD image diagram illustrating the crystalline state 3 (CE3) Au thin film material prepared according to the present invention, the comparison; [0038] FIG. 15 is an XRD pattern, indicating that the present invention is particularly Example 3 ( E3) the crystal structure of the crystalline material of the Au thin film was prepared;

[0039] 图16是一XRD影像图,说明由本发明该具体例3 (E3)所制得的结晶化Au薄膜材料的结晶状态; [0039] FIG. 16 is an XRD image diagram illustrating crystallization of Au thin film material of Example 3 (E3) prepared by the present invention, the particular crystalline state;

[0040] 图17是一穿透率(transmittance)曲线图,说明由本发明该具体例3 (E3)所制得的结晶化Au薄膜材料的穿透率; [0040] FIG. 17 is a transmittance (Transmittance) graph, the present invention is illustrated by the particular embodiment (E3) of the transmittance of the Au thin film crystalline material prepared 3;

[0041] 图18是XRD图,说明由本发明利用微波提升金属薄膜结晶性的方法的一具体例4(E4)所制得的结晶化Au薄膜材料的晶体结构; [0041] FIG. 18 is an XRD diagram illustrating a specific embodiment of the present invention using microwaves to enhance the crystallinity of the metal thin film 4 (E4) of the Au thin film crystal structure of the crystalline material to be obtained;

[0042] 图19是一XRD影像图,说明由本发明该具体例4(E4)制得的Au薄膜材料的结晶状态。 [0042] FIG. 19 is an image diagram XRD described in Example 4 (E4) Au thin film material obtained by the present invention, the particular crystalline state.

具体实施方式· detailed description·

[0043] 下面结合附图及实施例对本发明进行详细说明: [0043] The following embodiments in conjunction with the accompanying drawings and embodiments of the present invention in detail:

[0044]〈发明详细说明〉 [0044] <DETAILED DESCRIPTION>

[0045] 参阅图3及图4,本发明利用微波提升金属薄膜结晶性的方法的一较佳实施例,包含以下步骤: [0045] Referring to FIG. 3 and FIG. 4, the present invention utilizes a microwave improve the crystallinity of the metal thin film of a preferred embodiment, comprising the steps of:

[0046] (a)在一基板2上形成一金属薄膜30 ; [0046] (a) a metal thin film 30 is formed on a substrate 2;

[0047] (b)在该步骤(a)后,将该形成有该金属薄膜30的基板2放置于一基底5上;及 [0047] (b) after the step (a), the substrate formed with the metal thin film 30 is placed on a substrate 2 5; and

[0048] (c)在该步骤(b)后,对该基底5提供一微波MW,该基底5迅速地吸收该微波碼以转变成一热能H,并均匀地传递该热能H至该基板2上的金属薄膜30,进而提升该金属薄膜30的结晶性并形成一结晶化金属薄膜3。 [0048] (c) after the step (B), providing a microwave MW of the substrate 5, the substrate 5 rapidly absorb the microwave code to be converted into a heat energy H, and uniformly transfer the heat energy H onto the substrate 2 the metal thin film 30, thereby improving the crystallinity of the metal thin film 30 is crystallized to form a metal thin film 3.

[0049] 其中,该步骤(b)的基底5是由一选自下列所构成的群组的材料所制成:半导体材料、石墨及碳纤维。 [0049] wherein the step (b) of the substrate 5 is made of a material selected from the group consisting of: a semiconductor material, graphite, and carbon fibers.

[0050] 适用于本发明的半导体材料是硅。 [0050] semiconductor material suitable for the present invention is silicon. 由于碳纤维、石墨及硅等材料具有高的热传系数(thermal conductivity);此外,此等材料对于该微波MW的吸收性(absorptivity)佳。 Since the carbon fiber, graphite and silicon material having a high heat transfer coefficient (thermal conductivity); in addition, such good material for the microwave absorbent MW (absorptivity). 因此,可以迅速将该微波MW转化成高温的热能H。 Accordingly, the microwave can be quickly converted into thermal energy high temperature MW H. 本发明主要是借由半导体材料、石墨及碳纤维具备有迅速吸收该微波MW以将所吸收的微波MW转换成该热能H,及迅速地分散并传递该热能H等特质,从而使该微波MW迅速地被该基底5所吸收并转换成该热能H,且由该基底5迅速地分散以传递该热能H至该玻璃基板2上的金属薄膜30。 The present invention is mainly comprising by a semiconductor material, graphite, and carbon fibers have rapid absorption of the microwaves MW microwave MW be absorbed into the heat H, and quickly dispersed and delivers the heat energy H and other characteristics, so that the microwaves MW rapidly be absorbed by the substrate 5 and the thermal energy is converted into H, and the base 5 by a rapidly dispersed to transfer the heat energy H to the metal thin film 30 on the glass substrate 2. 借此,该微波MW经该基底5快速吸收所转换的热能H,可快速地分散并传递至该基板2上的金属薄膜30,进而提升该金属薄膜30的结晶性。 Whereby the microwaves MW by absorbing thermal energy of the substrate 5 H quickly converted, quickly dispersed and transferred to the metal thin film 30 on the substrate 2, thereby improving the crystallinity of the metal thin film 30.

[0051] 为使得微波加热基底所产生的高温热能得以有效地分散并传递至该金属薄膜30,较佳地,由俯视方向观察时,该基底5的面积是大于等于该基板2上的金属薄膜30的面积,且该基底5的面积与该基板2上的金属薄膜30的面积相互重叠。 [0051] The high temperature such that thermal energy generated in the microwave heating of the substrate is efficiently dispersed and transmitted to the metal film 30, preferably, when viewed in the direction of the plan view, the base area is greater than or equal to 5 a metal thin film on the substrate 2 area 30 and the area of ​​the substrate 5 is overlapped with the area of ​​the metal thin film 30 on the substrate 2.

[0052] 此处需说明的是,当工作压力越小时(如,O. 05TO1T),提供有微波的反应环境所欲产生微波等离子体(plasma)的时间越长(也就是,较不易产生微波等离子体);相反地,当工作压力越大时(如,5Torr),提供有微波的反应环境则越容易产生微波等离子体;因此,当该金属薄膜30是处于存在有微波等离子体的反应环境时,虽然该金属薄膜30仍可借由该微波等离子体予以结晶化;然而,此微波等离子体的高能量将对该金属薄膜30造成蚀刻(etching),如,易形成孔蚀等样貌。 [0052] It should be noted here that, when the operating pressure is smaller (e.g., O. 05TO1T), provided with a microwave reaction environment desired longer generating a microwave plasma (Plasma) (i.e., less susceptible to generating microwaves plasma); conversely, when the greater working pressure (e.g., of 5 Torr), there is provided a microwave reaction environment is more prone to microwave plasma; Thus, when the metal thin film 30 is present in the reaction environment microwave plasma when, although the metal thin film 30 may respond by means of the microwave plasma crystallized; however, this high-energy microwave plasma will cause etching (etching) of the metal thin film 30, e.g., pitting and so easy to form appearance. 此外,当金属材料欲进行结晶化时,其所处的工作环境的压力越小时,则结晶化的速度越快。 Further, when the metal material to be crystallized, its working environment in which the pressure is smaller, the faster the crystallization. 因此,较佳地,该步骤(c)的基底5是设置于一真空腔体4内。 Thus, preferably, the step (c) is provided in the base 5 of the vacuum chamber 4.

[0053] 此外,为避免该真空腔体4内因工作压力过大而产生大量微波等离子体进而破坏该金属薄膜30,同时考量到结晶化的速度以及该金属薄膜30的氧化问题;较佳地,在实施该步骤(c)时,该真空腔体4的工作压力是低于等于O. 25Torr。 [0053] Further, in order to avoid the vacuum chamber 4 and the internal work pressure microwave plasma and thus a large amount of the metal thin film 30 destroyed, while taking into consideration the crystallization speed and the problem of oxidation of the metal film 30; preferably, in the practice of step (c), the working pressure in the vacuum chamber 4 is lower than or equals O. 25Torr. 由上段说明已可了解,工作压力越低越不易产生微波等离子体,而工作压力的大小主要是涉及抽气系统[如,泵(pump)]的抽气能力,因此,适用于本发明该步骤(c)的真空腔体4的工作压力的下限值是取决于抽气系统的抽气能力,只要是可将该真空腔体4的工作压力降低至高真空状态,皆适合实施于本发明该步骤(C)。 Has been described by the upper segment can be appreciated, the more difficult the lower the operating pressure generating microwave plasma, and the size of the working pressure pumping system is primarily concerned [e.g., a pump (Pump)] pumping capacity, therefore, suitable for this step of the present invention lower limit (c) of the vacuum chamber 4 the working pressure depends on the pumping capacity of the pumping system, the vacuum may be as long as the working pressure chamber 4 is reduced to a high vacuum state, it is adapted to the embodiment of the present invention step (C).

[0054] 较佳地,该步骤(C)的微波的频率(frequency)是2. 45GHz,且是经由一电源供应器提供一介于750W〜2000W间的输出功率。 [0054] Preferably, the frequency of the microwave step (C), (Frequency) is 2. 45GHz, and to provide an output power range between a power supply via 750W~2000W. 又需说明的是,电源供应器所提供的输出功率的大小不但与产生微波等离子体的速度快慢有关,也与结晶化所需耗费的时间长短有关;换句话说,输出功率越大,产生微波等离子体的速度越快,而结晶化所需耗费的时间也越短;因此,在高输出功率的状态下,在实施该步骤(C)时所处的工作压力则应尽量维持高真空状态以尽量避免在短时间内产生微波等离子体。 They should be noted that the size of the output power provided by the power supply not only related to the speed of a microwave plasma generation rate of crystallization and also the length of time required for the relevant consumed; in other words, the greater the power output, generating a microwave plasma faster, it crystallized required shorter time consuming; therefore, at a high output power, in this embodiment a time step (C) the working pressure should try to maintain a high vacuum state try to avoid generating microwave plasma in a short time.

[0055] 较佳地,该步骤(a)的金属薄膜30是由一选自下列所构成的群组的金属所制成:金、钯,及铜;该步骤(a)的基板2是由一选自下列所构成的群组的材料所制成:玻璃及石英。 [0055] Preferably, the step (a), the metal thin film 30 is made of a metal selected from the group consisting of the following: gold, palladium, and copper; the substrate in step (a) is 2 a material selected from the group consisting of made of: glass and quartz.

[0056] 较佳地,该步骤(a)的金属薄膜30的厚度是小于等于20nm。 [0056] Preferably, the thickness of the step (a), the metal thin film 30 is equal to less than 20nm.

[0057] 在一具体例中,该步骤(a)的金属薄膜30是由金所制成,以致于该步骤(C)的结晶化金属薄膜3是一面心立方晶体结构并具有(111)优选方位。 [0057] In one embodiment, the step (a), the metal thin film 30 is made of gold, such that the step (C) the crystallization side metal thin film 3 is centered cubic crystal structure and having a (111) preferred position.

[0058] 在另一具体例中,该步骤(a)的金属薄膜30是由钯所制成,以致于该步骤(C)的结晶化金属薄膜3是一面心立方晶体结构并具有(111)优选方位。 [0058] In another particular embodiment, the step (a), the metal thin film 30 is made of palladium, such that the step (C) the crystallization side metal thin film 3 is centered cubic crystal structure and having a (111) preferred orientation.

[0059] 此处值得说明的是,本发明该步骤(a)的金属薄膜30的厚度并非只局限于20nm。 [0059] It should be noted here that the thickness of the metal film 30 of the present invention, the step (a) is not limited to 20nm. 发明人曾在实验过程中,将一厚度约50nm的Au薄膜形成于一石英板上,并将该形成有Au薄膜的石英板放置于该真空腔体4中的一硅基底上,以O. 25Torr的工作压力及1100W的输出功率来实施50秒的微波结晶化处理,其实验的分析结果显示出,该结晶化Au薄膜的附着性佳,且是具有(111)优选方位的面心立方晶体结构,适合做为石英震荡片(quartzoscillator)使用。 The inventors had during the experiment, a thickness of about 50nm of the Au thin film formed on a quartz plate, and an Au film formed on the quartz plate placed on a silicon substrate in the vacuum chamber 4, to O. 25Torr working pressure and 1100W output power to embodiment 50 seconds microwave crystallization process that analyzes the results of experiments show that the crystallization adhesion good Au thin film, and having a (111) preferred orientation of the face-centered cubic crystal structure, suitable as a shock quartz piece (quartzoscillator) use.

[0060] 本发明该较佳实施例的方法所制得的具有(111)优选方位的金属薄膜材料,包含:该基板2 ;及该形成于该基板2上的结晶化金属薄膜3。 [0060] The preferred embodiment of the present invention a method of the obtained metal thin film material having a (111) preferred orientation, comprising: the substrate 2; and said metal thin film is formed on the crystallized 3 on the substrate 2. 该基板2呈透光性。 The substrate 2 has a light-transmissive. 该结晶化金属薄膜3是一面心立方晶体结构,且该结晶化金属薄膜3的面心立方晶体结构具有(111)优选方位;其中,该结晶化金属薄膜3的厚度是小于等于20nm,且该结晶化金属薄膜3是由一选自下列所构成的群组的金属所制成:金,及钯。 The crystallization of the metal film 3 is a side centered cubic crystal structure, and the crystallization of the face-centered cubic crystal structure of the metal film 3 having a (111) preferred orientation; wherein the thickness of the metal thin film 3 of the crystallization is less than or equal 20 nm, and the crystallizing the metal thin film 3 is made of a metal selected from the group consisting of: gold, and palladium.

[0061]〈比较例 I (CEl) > [0061] <Comparative Example I (CEl)>

[0062] 本发明利用微波提升金属薄膜结晶性的方法的一比较例I (CEl)是根据以下流程来实施。 A Comparative Example I (CEl) [0062] The method of the present invention using microwaves to enhance the crystallinity of the metal thin film is implemented according to the following procedure.

[0063] 以工作压力及祀材(target)派镀电流分别为4X 10_3mTorr及40mA等派镀条件,在一磁控派镀系统(Magnetron sputtering system)中的一基板上沉积一厚度约12nm的Cu薄膜。 [0063] In the working pressure and the Si material (target) to send the plating current and 40mA respectively 4X 10_3mTorr send other plating conditions, the plating system to send a magnetron (Magnetron sputtering system) is deposited to a thickness of approximately 12nm on a substrate of Cu film. 在本发明该比较例I(CEl)中,该基板是购自康宁(corning)公司所生产且型号为Eagle 2000的AMLCD玻璃,且该基板的厚度与面积分别为700m与IcmX 1cm。 In the present invention, the Comparative Example I (CEl), the substrate is commercially available from Corning (Corning) produced by the company and the AMLCD model Eagle 2000 glass, and the thickness of the area of ​​the substrate, respectively, and IcmX 1cm to 700m.

[0064]〈具体例 I (El) > [0064] <Specific Example I (El)>

[0065] 本发明利用微波提升金属薄膜结晶性的方法的一具体例I(El)大致上是相同于该比较例l(CEl),其不同处是在于,该具体例I(El)的一Cu薄膜是进一步地被放置于一工作压力为O. 25Torr的真空腔中的一硅基底上,以1100W的输出功率对该Cu薄膜施予60秒的微波结晶化处理并制得一结晶化Cu薄膜。 [0065] The method of the present invention using microwaves to enhance the crystallinity of the metal thin film of a specific embodiment of I (El) is substantially the same as in Comparative Example l (CEl), which is different from that at a particular embodiment of the I (El) is Cu film is further substituted with a working pressure is placed on a silicon substrate O. 25Torr vacuum chamber to the administering of the output power of 1100W for 60 seconds microwave Cu thin film crystallization process and crystallized to prepare a Cu film. 在本发明该具体例I(El)中,该硅基底的厚度与面积分别为375 ± 25m与2cmX 2cm。 In this particular embodiment of the present invention, I (El), the thickness of the silicon substrate with an area of ​​375 ± 25m respectively and is 2cmX 2cm.

[0066] < 比较例2 (CE2) > [0066] <Comparative Example 2 (CE2)>

[0067] 本发明利用微波提升金属薄膜结晶性的方法的一比较例2(CE2)大致上是相同于该比较例I (CEl),其不同处是在于,该比较例2 (CE2)的金属薄膜为一厚度约15nm的Pd薄膜。 [0067] The present invention utilizes a microwave lifting Comparative Example 2 (CE2) substantially crystalline metal thin film method is the same as in the Comparative Example I (CEl), which difference is that in that the metal in Example 2 (CE2) of the comparison Pd film is a film having a thickness of about 15nm.

[0068] < 具体例2 (E2) > [0068] <Specific Example 2 (E2)>

[0069] 本发明利用微波提升金属薄膜结晶性的方法的一具体例2(E2)大致上是相同于该具体例I (El),其不同处是在于,该具体例2 (E2)的金属薄膜为一厚度约15nm的Pd薄膜,且微波结晶化处理是实施180秒。 [0069] The method of using a microwave of the present invention to enhance the crystallinity of the metal thin film of a specific example 2 (E2) is substantially the same as the specific examples I (El), which differences are that the metal of the specific example 2 (E2) of Pd film is a film having a thickness of about 15nm, and the crystallization process is implemented microwave for 180 seconds.

[0070] < 比较例3 (CE3) > [0070] <Comparative Example 3 (CE3)>

[0071] 本发明利用微波提升金属薄膜结晶性的方法的一比较例3 (CE3)大致上是相同于该比较例I (CEl),其不同处是在于,该比较例3 (CE3)的金属薄膜为一厚度约IOnm的Au薄膜。 [0071] The method of the present invention using microwaves to enhance the crystallinity of the metal thin film is a Comparative Example 3 (CE3) is substantially identical to the Comparative Example I (CEl), which differences are that the metal of the Comparative Example 3 (CE3) of Au film is a film of a thickness of about IOnm.

[0072] < 比较例4 (CE4) > [0072] <Comparative Example 4 (CE4)>

[0073] 本发明利用微波提升金属薄膜结晶性的方法的一比较例4(CE4)大致上是相同于该比较例3(CE3),其不同处是在于,该比较例4(CE4)更进一步地在一工作压力为O. 25Torr的真空腔体中,以1100W的输出功率对一Au薄膜实施30秒的微波结晶化处理;其中,在实施微波结晶化处理时是未使用一硅基底。 [0073] The present invention utilizes a microwave lifting Comparative Example crystallinity of the metal thin film 4 (CE4) is substantially the same as in Comparative Example 3 (CE3), which is different from that at the Comparative Example 4 (CE4) further at a working pressure of the vacuum chamber O. 25Torr, the output power of 1100W for 30 seconds in a microwave Au thin film crystallization treatment; wherein, in the practice of the microwave crystallization treatment is not used a silicon substrate.

[0074] < 具体例3 (E3) > [0074] <Specific Example 3 (E3)>

[0075] 本发明利用微波提升金属薄膜结晶性的方法的一具体例3(E3)大致上是相同于该具体例I (El),其不同处是在于,该具体例3 (E3)的金属薄膜为一厚度约IOnm的Au薄膜,且微波结晶化处理是实施30秒。 [0075] a particular embodiment of the present invention using microwaves to enhance the crystallinity of the metal thin film 3 (E3) is substantially the same as the specific examples I (El), which differences are that the metal of the specific examples 3 (E3) of Au film is a film having a thickness of about IOnm, and the crystallization process is a microwave for 30 seconds.

[0076] < 具体例4 (E4) > [0076] <Specific Example 4 (E4)>

[0077] 本发明利用微波提升金属薄膜结晶性的方法的一具体例4(E4)大致上是相同于该具体例3 (E3),其不同处是在于,该具体例4 (E4)在实施微波结晶化处理时的工作压力为大气压力(atmospheric pressure),且微波结晶化处理是实施45秒。 The method of the invention using microwaves to enhance the crystallinity of the metal thin film of a specific example 4 (E4) substantially [0077] This is the same as the specific examples 3 (E3), which differences are that, in this specific example 4 (E4) In the embodiment microwave pressure during crystallization process the atmospheric pressure (atmospheric pressure), and the crystallization process is a microwave embodiment 45 seconds.

[0078] <分析数据> [0078] <Analysis data>

[0079] 参图5所显示的XRD影像图可知,本发明该比较例I (CEl)所制得的Cu薄膜未见有任何晶面的绕射环(diffraction ring)。 XRD image shown in FIG. [0079] 5 that reference, the present invention Comparative Example I (CEl) prepared a Cu film has no diffraction ring any crystal plane (diffraction ring).

[0080] 参图6所显示的XRD影像图可知,本发明该具体例I (El)的Cu薄膜在60秒的微波结晶化处理后显示有(111)面与(200)面等绕射环。 XRD image shown in FIG. [0080] reference to FIG. 6, this particular embodiment of the present invention, I (El) of the Cu film after 60 seconds of microwave crystallization treatment showed diffraction rings (111) plane and the (200) plane . [0081] 参阅图7所显示的XRD图可知,本发明该比较例2 (CE2)与具体例2 (E2)的XRD图在趋近34. 5°与39. 9°两处分别显示有一绕射信号峰,其经由编号为88-2335号的JCPDF卡比对后证实分别为fee晶体结构的(111)面与(200)面,且该具体例2 (E2)在180秒的微波结晶化处理后具有(111)优选方位。 [0081] Referring to FIG. 7 shows the XRD pattern shows that the present invention Comparative Example 2 (CE2) and specific examples of 2 (E2) is approaching the XRD pattern 34. 5 ° and two display 39. 9 ° respectively around a peak transmission signal, which is confirmed by the ID card No. 88-2335 of JCPDF alignment respectively (111) plane and the (200) crystal plane fee structure, and the specific example 2 (E2) 180 seconds in the microwave crystallization after treatment with (111) preferred orientation.

[0082] 再配合参图8所显示的XRD影像图可知,本发明该比较例2(CE2)所制得的Pd薄膜显示有微弱的(111)面绕射环。 [0082] coupled with the image of FIG. 8 show XRD reference figure shows, the present invention Comparative Example 2 (CE2) the obtained Pd film showed a weak (111) diffraction plane ring.

[0083] 另,配合参图9所显示的XRD影像图可知,本发明该具体例2(E2)的Pd薄膜在180秒的微波结晶化处理后不但显示有(111)面、(200)面与(220)面等绕射环;此外,(111)面绕射环更略微地聚集为圆弧状。 [0083] Another, XRD image 9 shown with reference to FIG apparent, the present invention is Pd film 2 (E2) in this specific example only showed (111) plane after 180 seconds of microwave crystallization treatment, (200) and (220) plane diffraction ring; in addition, the (111) plane diffraction aggregate slightly more arcuate ring. 证实本发明该具体例2 (E2)的结晶化Pd薄膜为fee晶体结构,且在180秒的微波结晶化处理后,该具体例2 (E2)的结晶化Pd薄膜的fee晶体结构具有(111)优选方位。 Confirmed that the present invention is the specific example 2 (E2) crystallization of Pd thin film is a fee crystal structure, and after 180 seconds the microwave crystallization treatment, fee crystal structure of the Specific Example 2 (E2) crystallization of Pd film with (111 ) preferred orientation.

[0084] 参图10所显示SEM表面形貌图可知,本发明该比较例3(CE3)的Au薄膜在微波结晶化处理前已显示有许多微裂缝(micro-crack)。 [0084] FIG. 10 shows an SEM reference surface topography can be seen, Au film of the Comparative Example 3 (CE3) of the present invention is shown in the microwave before crystallization process has many micro-cracks (micro-crack).

[0085] 参图11所显示的SEM表面形貌图可知,本发明该比较例4(CE4)在未使用该硅基底并经30秒的微波结晶化处理后,该结晶化Au薄膜仍因为微波的分布不均的电场与磁场,而导致该结晶化Au薄膜无法呈连续膜的结构,此结果与Ziping Cao等人所公开的文献的结果类似,均是微波分布不均所导致。 SEM surface morphology shown in FIG. [0085] reference to FIG 11, the present invention after the Comparative Example 4 (CE4) without using the silicon substrate and dried for 30 seconds microwave crystallization treatment, the Au thin film is crystallized because the microwave is still the uneven distribution of electric and magnetic fields, resulting in the crystalline structure of the Au thin film was not a continuous film, similar results with the results of this literature Ziping Cao et al., as disclosed, are caused by the uneven distribution of the microwave.

[0086] 参图12所显示的SEM表面形貌图可知,本发明该具体例3(E3)在30秒的微波结晶化处理后,原本存在于Au薄膜中的微裂缝已消失。 SEM surface topography [0086] FIG. 12 shows parameters understood, this particular embodiment of the present invention is 3 (E3) after 30 seconds of microwave crystallization treatment, originally present in the microcracks in the Au thin film has disappeared. 其主要原因来自于,微波经本发明该具体例3(E3)的硅基底迅速地吸收后以转变成热能,同时利用该硅基底本身的高热传系数以快速地将热能分散并传递至该Au薄膜,致使微裂缝间的Au薄膜予以融合,并导致微裂缝的消失。 The main cause lies in the microwave through this particular embodiment of the present invention is 3 (E3) of the silicon substrate after the rapidly absorbed into heat, while using a heat transfer coefficient of the silicon substrate itself to rapidly dispersed and the energy transferred to the Au film, resulting in micro-cracks between the Au film to be fused, and lead to the disappearance of micro-cracks.

[0087] 参阅图13所显示的XRD图可知,本发明该比较例3 (CE3)的XRD图在趋近32. 5°、38°与55°等处分别显示有一绕射信号峰,其经由编号为04-0784号的JCPDF卡比对后证实分别为fee晶体结构的(111)面、(200)面与(220)面。 The XRD pattern shown in [0087] Referring to Figure 13 can be seen, the present invention Comparative Example 3 (CE3) is approaching the XRD pattern 32. 5 °, 38 ° and 55 °, etc. show a diffraction peak signal, via No. 04-0784 JCPDF number of cards than the latter were confirmed (111) crystal plane fee structure, (200) plane and the (220) plane.

[0088] 再配合参图14所显示的XRD影像图可知,本发明该比较例3(CE3)所制得的Au薄膜已显示有(111)面、(200)面与(220)面等绕射环。 [0088] together with about a reference drawing showing an XRD image shown in the figure 14 can be seen, the present invention is that Comparative Example 3 (CE3) The resulting Au thin film has been shown to have a (111) plane, (200) plane and the (220) plane shot ring.

[0089] 参阅图15所显示的XRD图可知,本发明该具体例3 (E3)的XRD图只留下一趋近于32.5°处的(111)面绕射信号峰,证实该具体例3 (E3)在30秒的微波结晶化处理后具有优异的(111)优选方位;此外,参图15右方所插入的X光摇摆曲线(x-ray rocking curve)图可知,其(111)面的I倍绕射角的绕射信号峰的半高宽只有约O. 785°,证实该具体例3(E3)的结晶化Au薄膜的[111]方向分布较小,也表示该结晶化Au薄膜的fee晶体结构具有优异的(111)优选方位。 [0089] The XRD pattern shown refer to FIG. 15, the embodiment of the present invention, this particular 3 (E3), leaving only the XRD pattern (111) plane diffraction peak of a signal at close to 32.5 °, it was confirmed that the specific examples 3 (E3) is excellent in a (111) preferred orientation after 30 seconds of microwave crystallization treatment; moreover, reference rightward in FIG. 15 inserted X-ray rocking curve (x-ray rocking curve) FIG apparent that (111) signal peaks of the diffraction angle of diffraction I times the half width of only about O. 785 °, confirmed that [111] direction in this specific example 3 (E3) crystallization of Au thin film distribution is small, indicating that the crystallization Au fee film having excellent crystal structure (111) preferred orientation.

[0090] 再配合参图16所显示的XRD影像图可知,本发明该具体例3 (E3)的Au薄膜在30秒的微波结晶化处理后,原本图14中所显示的(111)面、(200)面与(220)面等绕射环,已聚集为(111)面、(200)面与(220)面等绕射点。 [0090] together with XRD image 16 shown in reference figure shows, the present invention is the specific example 3 (E3) of the Au film in 30 seconds microwave crystallization treatment, (111) faces 14 shown originally in FIG, (200) plane and the (220) plane diffraction ring, is aggregated (111) plane, the diffraction point (200) plane and the (220) plane. 证实本发明该具体例3 (E3)的结晶化Au薄膜为fee晶体结构,且在30秒的微波结晶化处理后,该具体例3 (E 3)的结晶化Au薄膜的fee晶体结构具有(111)优选方位。 Confirmed that the present invention is the specific example 3 (E3) crystallization of Au thin film is a fee crystal structure, and after 30 seconds the microwave crystallization treatment, fee crystal structure of the Specific Example 3 (E 3) crystallization of Au thin film having the ( 111) preferred orientation.

[0091] 值得一提的是,由于结晶化Au薄膜与结晶化Pd薄膜的(111)面的表面能(surface energy)低,其有利于分子修饰(molecule modification);因此,对于需要在一晶片(chip)表面预先形成一硫醇有机分子(thiol organic molecule)膜以供连接生物分子(biomolecules)在该硫醇有机分子膜上方的生化感测晶片(bio-sensor chip)而言,本发明该等具体例(E2〜E3)的具有(111)优选方位的结晶化Au薄膜材料与结晶化Pd薄膜材料属于极为适当的候选材料。 [0091] It is worth mentioning that, since the surface crystallization Au film and the crystallized Pd thin film (111) plane of the energy (surface energy) is low, which is conducive to molecular modification (molecule modification); therefore, the need for a wafer (chip) surface of a preformed organic thiol molecule (thiol organic molecule) for connecting the membrane to the biomolecule (biomolecules) in a biochemical sensing wafer above the thiol molecule organic film (bio-sensor chip), the present invention is the etc. specific examples of (E2~E3) crystallization of Au thin film material having a (111) preferred orientation and crystallization of the film material very suitable Pd candidates belong. 而根据同样的特性与需求,本发明该等具体例(E2〜E3)的具有(111)优选方位的结晶化Au薄膜材料与结晶化Pd薄膜材料,也适合做为电化学(electrochemistry)上的工作电极(working electrode)使用。 According to the same characteristics and requirements, specific examples of such (E2~E3) of the present invention have a crystalline material and the Au thin film is crystallized Pd thin film material (111) preferred orientation, is also suitable as the electrochemically (Electrochemistry) of the working electrode (working electrode) use.

[0092] 参图17所显示的穿透率曲线图可知,本发明该具体例3 (E3)在波长趋近550nm处的穿透率达80%。 Transmittance curve shown in FIG. [0092] reference to FIG 17 seen, this particular embodiment of the present invention is 3 (E3) penetration rate approaching 80% at 550nm wavelength. 因此,本发明该具体例3 (E3)的结晶化Au薄膜材料适合被拿来做为太阳能电池的透明导电玻璃及节能玻璃(low-emissivity glass)等应用。 Thus, this particular embodiment of the present invention is 3 (E3) crystallization of Au thin film material is adapted to be brought as a solar cell and a transparent conductive glass energy-saving glass (low-emissivity glass) applications.

[0093] 参图18所显示的XRD图可知,本发明该具体例4(E4)的XRD图只留下一趋近在32.5°处的(111)面绕射信号峰,证实该具体例4 (E4)在45秒的微波结晶化处理后具有优异的(111)优选方位。 The XRD pattern shown in [0093] reference 18 that this particular embodiment of the present invention 4 (E4), leaving only the XRD pattern (111) plane diffraction peak of a signal at the approach at 32.5 °, Example 4 confirmed that the specific (E4) having excellent (111) preferred orientation in the microwave for 45 seconds after the crystallization process.

[0094] 再配合参图19所显示的XRD影像图可知,本发明该具体例4 (E4)的Au薄膜在45秒的微波结晶化处理后,已显示有(111)面、(200)面与(220)面等绕射点。 [0094] again with reference to FIG 19 shows XRD image map above, the present invention, this particular embodiment Au thin film 4 (E4) after 45 seconds of microwave crystallization treatment, has been shown to have a (111) plane, (200) and (220) plane diffraction points. 证实本发明该具体例4 (E4)的结晶化Au薄膜为fee晶体结构,且在45秒的微波结晶化处理后,该具体例4(E4)的结晶化Au薄膜的fee晶体结构具有(111)优选方位。 It confirmed that the present invention is the specific example 4 (E4) crystallization of Au thin film in 45 seconds microwave crystallization treatment, fee crystal structure 4 (E4) crystallization of Au thin film of this particular embodiment having a (111 fee crystal structure, and ) preferred orientation.

[0095] 归纳上述,本发明提升金属薄膜结晶性的方法及其方法制得的金属薄膜材料,可提升金属薄膜的结晶性并改善结晶化金属薄膜的穿透率,或使结晶化金属薄膜呈连续膜的结构,以使得结晶化金属薄膜的应用性得以扩大。 [0095] summarized above, the present invention is to enhance the crystalline metal thin film material and a metal thin film obtained by the method, can improve the crystallinity of the metal thin film and improve transmittance crystallized metal thin film or metal thin film as a cause crystallization continuous film structure, so that the application of the crystalline metal thin film is enlarged.

[0096] 以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。 [0096] The above are only preferred embodiments of the present invention only, not limitation of the present invention in any form, although the invention has been disclosed above by the preferred embodiments, but not intended to limit the present invention, anyone familiar with Those skilled in the art, without departing from the scope of the technical solution of the present invention, when the content of the above techniques can be used to make minor modifications disclosed as equivalent variations or modifications equivalent embodiments, but all without departing from the technical content of the present invention, according to technical essence of the invention is a simple modification of any of the above embodiments made equivalent modifications and variations, provided they fall within the scope of the present invention.

Claims (11)

  1. 1. 一种提升金属薄膜结晶性的方法,其特征在于,其包含以下步骤: (a)在一个基板上形成一层金属薄膜; (b)在该步骤(a)后,将该形成有该金属薄膜的基板放置于一个基底上;及(C)在该步骤(b)后,对该基底提供一微波,该基底迅速地吸收该微波以转变成一热能,并均匀地传递该热能至该基板上的金属薄膜,进而提升该金属薄膜的结晶性并形成一层结晶化金属薄膜; 其中,该步骤(b)的基底是由一选自下列所构成的群组的材料所制成:半导体材料、石墨及碳纤维。 1. A method to enhance the crystallinity of the metal thin film, characterized in that it comprises the steps of: (a) forming a layer of a metal thin film on a substrate; (b) after the step (A), the film on which the substrate, a metal thin film is placed on a substrate; and (C) after the step (B), the substrate provides a microwave, the substrate rapidly absorbs the microwave to be converted into a thermal energy, and uniformly transfer the thermal energy to the substrate on the metal thin film, thereby improving the crystallinity of the metal thin film and the metal thin film is crystallized to form a layer; wherein the substrate in step (b) is made of a material selected from the group consisting of: a semiconductor material , graphite and carbon fiber.
  2. 2.如权利要求I所述的提升金属薄膜结晶性的方法,其特征在于:该基底的面积是大于等于该基板上的金属薄膜的面积,且该基底的面积与该基板上的金属薄膜的面积相互重叠。 2. I claim the crystalline metal thin film according to the method of lifting, characterized in that: the area of ​​the substrate is not less than the area of ​​the metal thin film on the substrate, and the area of ​​the substrate and the metal thin film on the substrate the area of ​​overlap.
  3. 3.如权利要求I所述的提升金属薄膜结晶性的方法,其特征在于:该半导体材料是硅。 I 3. A method as claimed in claim crystallinity of the metal thin film lifting, characterized in that: the semiconductor material is silicon.
  4. 4.如权利要求I所述的提升金属薄膜结晶性的方法,其特征在于:该步骤(c)的基底是设置于一个真空腔体内。 4. The method of claim I crystallinity of the metal thin film lifting, characterized in that: the substrate of the step (c) is disposed in a vacuum chamber.
  5. 5.如权利要求I所述的提升金属薄膜结晶性的方法,其特征在于:在实施该步骤(c)时,该真空腔体的工作压力是低于等于O. 25Torr。 5. The method of claim I crystallinity of the metal thin film lifting, wherein: in practicing step (C), the working pressure in the vacuum chamber is lower than or equals O. 25Torr.
  6. 6.如权利要求5所述的提升金属薄膜结晶性的方法,其特征在于:该步骤(c)的微波是经由一个电源供应器提供一介于750W〜2000W间的输出功率。 A method to enhance the crystallinity of the metal thin film 5 as claimed in claim 6, wherein: the microwave step (c) to provide an output power range between a power supply via 750W~2000W.
  7. 7.如权利要求I所述的提升金属薄膜结晶性的方法,其特征在于:该步骤(a)的金属薄膜是由一选自下列所构成的群组的金属所制成:金、钯,及铜;该步骤(a)的基板是由一选自下列所构成的群组的材料所制成:玻璃及石英。 7. The method of claim I crystallinity of the metal thin film lifting, wherein: step (a) is a metal thin film is a metal selected from the group consisting of made of: gold, palladium, and copper; the substrate in step (a) is made of a material selected from the group consisting of: glass and quartz.
  8. 8.如权利要求7所述的提升金属薄膜结晶性的方法,其特征在于:该步骤(a)的金属薄膜是由金所制成,以致于该步骤(C)的结晶化金属薄膜是一面心立方晶体结构并具有(111)优选方位。 8. A method to enhance the crystallinity of the metal thin film according to claim 7, wherein: step (a) is a metal thin film is made of gold, such that the step (C) is the crystallization of the metal thin film on one side centered cubic crystal structure and having a (111) preferred orientation.
  9. 9.如权利要求7所述的提升金属薄膜结晶性的方法,其特征在于:该步骤(a)的金属薄膜是由钯所制成,以致于该步骤(C)的结晶化金属薄膜是一面心立方晶体结构并具有(111)优选方位。 9. A method to enhance the crystallinity of the metal thin film according to claim 7, wherein: step (a) is a metal thin film is made of palladium, such that the step (C) is the crystallization of the metal thin film on one side centered cubic crystal structure and having a (111) preferred orientation.
  10. 10.如权利要求I所述的提升金属薄膜结晶性的方法,其特征在于:该步骤(a)的金属薄膜的厚度是小于等于20nm。 10. The method of claim I crystallinity of the metal thin film lifting, characterized in that: the thickness of the metal thin film in step (a) is less than or equal 20nm.
  11. 11. 一种金属薄膜材料,其特征在于,其包含: 一个基板,呈透光性;及一个基板,呈透光性;及一层形成于该基板上的结晶化金属薄膜,该结晶化金属薄膜是一面心立方晶体结构,且该结晶化金属薄膜的面心立方晶体结构具有(111)优选方位; 其中,该结晶化金属薄膜的厚度是小于等于20nm,且该结晶化金属薄膜是由一选自下列所构成的群组的金属所制成:金,及钯。 11. A metal thin film material, characterized in that it comprises: a substrate, a translucent shape; and a substrate was translucent; and a metal layer formed on a crystalline thin film on the substrate, the crystalline metal film is a side centered cubic crystal structure, and the crystallization of the metal thin film is a face-centered cubic crystal structure having a (111) preferred orientation; wherein the thickness of the metal thin film on the crystal is less than or equal 20 nm, and the crystallization of the metal film is made of a a metal selected from the group consisting of made of: gold, and palladium.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6276295B1 (en) * 1997-07-30 2001-08-21 Applied Materials, Inc. Thermal reflow method employing microwave energy
TW494143B *

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW494143B *
US6276295B1 (en) * 1997-07-30 2001-08-21 Applied Materials, Inc. Thermal reflow method employing microwave energy

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A.Z. SIMÕES等.: "Growth of SrBi4Ti4O15 thin films in a microwave oven by the polymeric precursor method", 《JOURNAL OF ALLOYS AND COMPOUNDS》 *
HIDEKAZU SUEYOSHI等.: "Microwave heating of Thin Au Film", 《MATERIAL TRANSACTIONS》 *

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