CN1028885C - Vacuum low-temperature plasma sedimentatary false twisting device frictional disk - Google Patents
Vacuum low-temperature plasma sedimentatary false twisting device frictional disk Download PDFInfo
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- CN1028885C CN1028885C CN 91105060 CN91105060A CN1028885C CN 1028885 C CN1028885 C CN 1028885C CN 91105060 CN91105060 CN 91105060 CN 91105060 A CN91105060 A CN 91105060A CN 1028885 C CN1028885 C CN 1028885C
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- frictional disk
- deposition
- vacuum
- arc
- pressure
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Abstract
The present invention relates to a technique of a frictional disk of a vacuum low-temperature plasma sediment false twisting device, which is a new technique of a frictional disk for the false twist texturing process to manufacture high-speed filature. In the technique, an ionization source of evaporation is formed from a water-cooled cathode in a vacuum, and arc plasma is formed under action of an electromagnetic field. The target surface of the cathode, which is uniformly corroded, evaporated and ionized, reacts with active gases and deposits on the basal body of the frictional disk in a metal compound structure the frictional disk manufactured by the method has the advantages of dense coating, strong adhesive force, and controllable granularity and roughness. The present invention can replace the traditional plasma spraying method at home and abroad. The secondary processing is not required after the deposition, and the coating is uniform.
Description
The vacuum low-temperature plasma sedimentatary false twisting device frictional disk technology is a kind of new making high speed spinning false twist texturing processing frictional disk technology, belongs to vacuum cold cathode arc plasma technique.
Traditional domestic and international making false twister frictional disk is the method that adopts High Temperature High Pressure plasma jet or vacuum plasma to spray, as U.S. Pat 4051655A.These method waste of material are big, power consumption is big, need secondary operations, equipment investment is big.
The purpose of this invention is to provide a kind of method new, that utilize deposition technique making false twister frictional disk, the method that particularly a kind of vacuum low-temperature plasma deposition technique creates friction and coils.
A kind of method of making the false twister frictional disk with the vacuum low-temperature plasma deposition technique is characterized in that process, comprising:
(1) the frictional disk matrix is carried out machining, sandblast, deoils, cleans,
(2) with Ar gas the frictional disk matrix is carried out ion bom bardment in a vacuum and degass,
(3) pure chromium of deposition or nickel chromium triangle in Ar gas,
(4) wearing layer of deposition chromium compound or nickel chromium triangle compound in mist.
The vacuum low-temperature plasma deposition technique is the basis principle of the plasma accelerator of ear type end side structure suddenly, forms evaporating and ionizing source with water-cooled cathode, under the effect of electromagnetic field, forms arc plasma in a vacuum.After the striking of water-cooled cathode target surface, target surface produces strong luminous arc spot.In the full of stains or spots point of arc very high temperature is arranged, be enough to make this regional cathode material to be evaporated to metallic atom steam, and ionization forms plasma.The active gases of Ionized metallic atom and feeding interacts, and beats to the frictional disk matrix that has back bias voltage with very high energy, and deposits with compound structure.Cathodic arc spot is done random motion at cathode target surface with the speed of tens meters of per seconds, makes whole target surface by even corrode, and its sedimentation rate is very high, and per minute can reach 1～2 μ m.
The negative electrode target that adopts different metal materials to make can generate the different metallic compound of hardness in different active gases.Can change sedimental granularity and surface roughness by control arc current and gas flow (or operating room's pressure).
In the accompanying drawing, Fig. 1, Fig. 2 are the profiles of modal two kinds of frictional disks.
1 is the frictional disk matrix among the figure, the 2nd, and coating.
Negative electrode target of the present invention is with pure chromium (99%～99.99%) or the nichrome made with pure chromium (99%～99.99%) and pure nickel (99%～99.99%) (Ni: Cr is (10～20): (90～80)).At N
2: Ar is (98～92): form CrN and NiCrN in the atmosphere of (2～8); At O
2: Ar is (98～92): form Cr in the atmosphere of (2～8)
2O
3
The frictional disk matrix is made with LY12CZ aluminium alloy car: through the cleaning of deoiling of sandblast strictness; Before the deposition in a vacuum with Ar ion bom bardment degas (pressure in vacuum tank for the number Pa, bias voltage-400V～-1000V
DC, bombardment time 20～40 minutes); The bottom deposits pure chromium of 1～3 μ m or nickel chromium triangle earlier, and (Ar pressure is 10
-1Pa～10
-2Pa, arc voltage 18V～22V, arc current 80A～100A, bias voltage be-100V～-300V, the time is several minutes, gets final product in 5 minutes by normal sedimentation speed; Feed mist then, make operating room's stable gas pressure (if mist is N
2, Ar, it forms N
2: Ar is (98～92): (2～8), pressure are 10
-1Pa～10
-2Pa; Arc voltage is 18V～22V, and arc current is 80A～100A; Bias voltage is-300V～-100V
DCIf mist is O
2, Ar, it forms O
2: Ar is (98～92): it is the best with (1～2) Pa that Pa[is counted in (2～8), pressure)] arc voltage 17V～20V, arc current 70V～100A; Bias voltage-300V～-100V
DC; Sedimentation time is by the thickness and the deposition velocity decision of film; The frictional disk matrix must be that evenly rotate in the axle center with the central shaft in deposition process.
Sedimentary deposit is through photoelectron spectrograph (xps), and Auger electron spectrometer (AES) and scanning electronic microscope (SEM) are analyzed, and composition is CrN, Cr
2O
3Or NiCrN, being evenly distributed, profile analysis has good transition zone.Concrete physical property sees the following form:
(table is seen the literary composition back)
The present invention compares with domestic and international traditional preparation method, and following some advantage is arranged:
1. equipment investment is low, is 1/5 of HTHP plasma jet; It is 1/8 of vacuum plasma injection.
2. traditional preparation method, blasting materials needs 1～2 μ m fine powder, and waste of raw materials is big during injection, and power consumption is big, generally needs 50～100KW; Material of the present invention is saved, and power consumption is little, only needs 2～4KW.
3. technology of the present invention is simple, need not secondary operations, saves special purpose grinder and Specific Clamps with skive that secondary operations is used.
4. compare with other deposition process, deposition velocity of the present invention is fast, and coating granularity and surface roughness are controlled.
5. the frictional disk cost of making according to the present invention is low, only is 1/3 of import.
Project microhardness (HV) adhesive force
Main thickness (the KG/mm of parameter2) granularity friction (KG)
Composition (μ m) load: 10g. (μ m) coefficient LOADING RATES 3N/min
The coating time: 20s. cut speed 4mm/min
CrN CrN ～30 1207 1～2 0.116 9
Cr
2O
3Cr
2O
3～30 1247 1～2 0.108 9
NiCrN NiCrN～25 2,000 1 following 0.081 9
Claims (8)
1, a kind of method of making the false twister frictional disk with the vacuum low-temperature plasma deposition technique is characterized in that process, comprising:
(1) the frictional disk matrix is carried out machining, sandblast, deoils, cleans,
(2) with Ar gas the frictional disk matrix is carried out ion bom bardment in a vacuum and degass,
(3) pure chromium of deposition or nickel chromium triangle in Ar gas,
(4) wearing layer of deposition chromium compound or nickel chromium triangle compound in mist.
2, according to the method for claim 1, it is characterized in that: the pressure that the frictional disk matrix degass with Ar ion bom bardment in a vacuum is number Pa; Bias voltage-400V～-1000V
DC; Time is 20～40 minutes.
3, according to the method for claim 1, it is characterized in that: the Ar pressure that deposits pure chromium layer or nicr layer is 10
-1Pa～10
-2Pa; Arc voltage is 18V～22V; Arc current is 80A～100A; Bias voltage is-100V～-300V
DC; Deposit thickness is 1～3 μ.
4, according to the method for claim 1, it is characterized in that: the mist of deposition wearing layer is O
2, Ar; It forms O
2: Ar is (98～92): (2～8); Pressure is the best for number Pa with (1～2) Pa; Arc voltage is 17V～20V; Arc current is 70A～100A; Bias voltage is-300V～-100V
DC
5, according to the method for claim 1, it is characterized in that: the mist of deposition wearing layer is N
2, Ar; It forms N
2: Ar is (98～92): (2～8); Pressure is 10
-1Pa～10
-2Pa; Arc voltage is 18V～22V; Arc current is 80A～100A; Bias voltage is-300V～-100V
DC
6, according to the method for claim 1, it is characterized in that: deposit the pure chromium that used cathode targets material is (99%～99.99%).
7, according to the method for claim 1, it is characterized in that: depositing used cathode targets material is (10～20%): the Ni-Cr alloy of (90: 80), and Ni, the purity of Cr is (99%～99.99%).
8, according to the method for claim 1, it is characterized in that: in the process of ion bom bardment, the pure chromium of deposition or nickel chromium triangle and deposition wearing layer, frictional disk is being that uniform rotation is done in the axle center with the central shaft all the time; The deposition required time is decided by the thickness that requires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91105060 CN1028885C (en) | 1991-07-29 | 1991-07-29 | Vacuum low-temperature plasma sedimentatary false twisting device frictional disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91105060 CN1028885C (en) | 1991-07-29 | 1991-07-29 | Vacuum low-temperature plasma sedimentatary false twisting device frictional disk |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1069087A CN1069087A (en) | 1993-02-17 |
| CN1028885C true CN1028885C (en) | 1995-06-14 |
Family
ID=4906947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91105060 Expired - Fee Related CN1028885C (en) | 1991-07-29 | 1991-07-29 | Vacuum low-temperature plasma sedimentatary false twisting device frictional disk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1028885C (en) |
-
1991
- 1991-07-29 CN CN 91105060 patent/CN1028885C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1069087A (en) | 1993-02-17 |
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