CN102859674A - 电子装置的制造方法和装置及其一对夹压构件 - Google Patents

电子装置的制造方法和装置及其一对夹压构件 Download PDF

Info

Publication number
CN102859674A
CN102859674A CN2011800204408A CN201180020440A CN102859674A CN 102859674 A CN102859674 A CN 102859674A CN 2011800204408 A CN2011800204408 A CN 2011800204408A CN 201180020440 A CN201180020440 A CN 201180020440A CN 102859674 A CN102859674 A CN 102859674A
Authority
CN
China
Prior art keywords
duplexer
terminal
cramping
electronic unit
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800204408A
Other languages
English (en)
Inventor
二阶堂广基
和布浦徹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of CN102859674A publication Critical patent/CN102859674A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3613Polymers, e.g. resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92Specific sequence of method steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13164Palladium [Pd] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101Chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101Chamber
    • H01L2224/7511High pressure chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75251Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75252Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75272Oven
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • H01L2224/75303Shape of the pressing surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • H01L2224/75303Shape of the pressing surface
    • H01L2224/75305Shape of the pressing surface comprising protrusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75312Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/75981Apparatus chuck
    • H01L2224/75985Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009Pre-treatment of the bump connector or the bonding area
    • H01L2224/81024Applying flux to the bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053Bonding environment
    • H01L2224/81054Composition of the atmosphere
    • H01L2224/81075Composition of the atmosphere being inert
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053Bonding environment
    • H01L2224/81091Under pressure
    • H01L2224/81093Transient conditions, e.g. gas-flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • H01L2224/81209Compression bonding applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/8121Applying energy for connecting using a reflow oven
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • H01L2224/81815Reflow soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81905Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
    • H01L2224/81906Specific sequence of method steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399Material
    • H01L2224/834Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9211Parallel connecting processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0209Inorganic, non-metallic particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954Other details of electrical connections
    • H05K2201/10977Encapsulated connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305Affixing by adhesive
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Abstract

本发明涉及一种电子装置的制造方法,该电子装置包括:第一电子部件(1),包含表面具有焊锡层的第一端子;以及第二电子部件(2),具有与该第一电子部件(1)的第一端子进行接合的第二端子,该电子装置的制造方法的特征在于,分别将多个第一电子部件(1)的第一端子与多个第二电子部件(2)的第二端子相对置而配置,并在各第一端子与各第二端子之间配置树脂层(3)而形成多个层叠体,一边对多个层叠体进行加热,一边从层叠体的层叠方向同时对多个层叠体进行夹压。

Description

电子装置的制造方法和装置及其一对夹压构件
技术领域
本发明涉及一种通过焊锡将相对置的端子进行接合的电子装置的制造方法和装置及其一对夹压构件。
背景技术
电子装置,例如,可通过施行用焊锡接合半导体元件的端子与其它半导体元件的端子、半导体元件的端子与基板的端子、或者基板的端子与其它基板的端子的工序来进行制造。
在使用焊锡进行接合后的半导体元件之间、半导体元件与基板之间、或者基板之间(下称“半导体元件之间等”)会出现间隙,因此需要用树脂的固化物来填充间隙。
以往,是在使用焊锡进行接合后使流动性的热固性树脂流入半导体元件之间等后,接着使树脂发生固化,从而填充半导体元件之间等的间隙。然而,在上述方法中,难以将流动性的热固性树脂无间隙地流入半导体元件之间等,因此有人在专利文献1中提出了如下方法。
在专利文献1中公开了一种在基板表面配置膜状的底部填充(Underfill)树脂后将半导体元件搭载在底部填充树脂上的方法和装置。在专利文献1中,将半导体元件搭载在底部填充树脂上后,将半导体元件压接在基板上而形成半导体元件与基板的层叠体,然后,在高压环境中使底部填充树脂发生固化。
现有技术文献
专利文献
专利文献1:日本特开2004-311709号公报
发明内容
发明要解决的课题
本发明人等在批量生产电子装置时考虑了如下方法。首先,在加热板上配置分别设有热固性树脂层的多个基板。然后,在热固性树脂层上配置半导体元件。
此时,以使半导体元件的端子贯穿热固性树脂层并与基板的端子相接触的方式,对热固性树脂层上的半导体元件施加载荷、进行压接,从而形成层叠体。反复该操作,获得多个层叠体。然后,对层叠体的半导体元件的端子、基板的端子彼此之间进行接合,并同时对树脂层进行加压固化。
但是,在该方法中,热固性树脂层基于加热板而处于加热状态,因此缓慢地发生固化。就是说,在对首个层叠体的基板与半导体元件进行压接期间,在不同于前述基板的其它基板上的热固性树脂层中发生固化。
因此,导致在对首个基板与半导体元件进行压接的力、和对最后的基板与半导体元件进行压接的力之间存在很大不同。由此,在设于基板上的端子与设于半导体元件上的端子之间发生导通不良,有降低可靠性的顾虑。
此外,虽然在此描述的是制作基板与半导体元件的层叠体的情况,但并不限于此,在制作基板彼此的层叠体、半导体元件彼此的层叠体的情况下也存在相同的课题。
本发明是鉴于如上所述的课题而完成的,其目的在于提供一种能够稳定地制造可靠性高的电子装置的电子装置制造方法和装置及其夹压构件。
解决课题的方法
基于本发明,提供一种电子装置的制造方法,该电子装置包括:第一电子部件,包含表面具有焊锡层的第一端子;以及第二电子部件,具有与该第一电子部件的第一端子进行接合的第二端子,该制造方法的特征在于,包括:在第一电子部件的第一端子与第二电子部件的第二端子之间配置含有焊剂活性(flux active)化合物和热固性树脂的树脂层而获得层叠体的工序;将层叠体加热至第一端子的焊锡层的熔点以上,从而使第一端子与第二端子进行焊锡接合的工序;以及,在通过流体对层叠体进行加压的同时使树脂层发生固化的工序,在获得层叠体的工序中,分别将多个第一电子部件的第一端子与多个第二电子部件的第二端子相对置而配置,并在各第一端子与各第二端子之间配置树脂层而形成多个层叠体,一边加热多个层叠体,一边从层叠体的层叠方向同时对多个层叠体进行夹压。
基于该发明,一边对多个层叠体进行加热,一边从层叠体的层叠方向同时对多个层叠体进行夹压。由此,能够抑制在对首个层叠体的第一电子部件与第二电子部件进行加热的同时进行夹压期间导致构成其它层叠体的热固性树脂发生固化的问题。因此,能够稳定地制造可靠性高的电子装置。
另外,基于本发明,还能够提供用于上述电子装置的制造方法中的装置。即,基于本发明还能够提供一种装置,该装置是将含有焊剂活性化合物和热固性树脂的树脂层配置于包含表面具有焊锡层的第一端子的第一电子部件的前述第一端子、和具有与该第一电子部件的前述第一端子相接合的第二端子的第二电子部件的前述第二端子之间而形成层叠体后,用于使前述第一端子与前述第二端子相接触的装置,其特征在于,该装置具有同时对多个层叠体进行夹压的夹压构件。
并且,基于本发明还能够提供上述电子装置的制造装置的夹压构件。即,基于本发明还能够提供一种夹压构件,其中,一对夹压构件中的形成有沟槽的至少一方夹压构件是以上下对称的方式形成。
发明效果
基于本发明,可提供一种能够稳定地制造可靠性高的电子装置的电子装置制造方法和装置。
附图说明
图1是表示本发明一种实施方式的电子装置的制造工序的工序剖面图。
图2是表示电子装置的制造工序的工序剖面图。
图3是表示电子装置的制造工序的工序剖面图。
图4是表示电子装置的制造装置的剖面图。
图5是表示电子装置的制造装置的剖面图。
图6是表示用夹具夹住多个层叠体的状态的剖面图。
图7是表示构成夹具的构件的俯视图。
图8是表示电子装置的制造工序的工序剖面图。
图9是表示电子装置的剖面图。
图10是表示一个变形例的电子装置的制造装置的剖面图。
图11是表示另一个变形例的电子装置的制造装置的剖面图。
具体实施方式
下面,基于附图说明本发明的实施方式。首先,参照图1至图5来说明本实施方式的电子装置制造方法的概要。
本实施方式的电子装置的制造方法中,该电子装置包括:第一电子部件1,包含表面具有焊锡层112的第一端子11;以及,第二电子部件2,具有与该第一电子部件1的第一端子11进行接合的第二端子21。
该电子装置的制造方法,包括:将含有焊剂活性化合物和热固性树脂的树脂层3配置于第一电子部件1的第一端子11与第二电子部件2的第二端子21之间而获得层叠体4的工序;将层叠体4加热至第一端子11的焊锡层112的熔点以上而使第一端子11与第二端子21进行焊锡接合的工序;以及,通过流体对层叠体4进行加压的同时使树脂层3发生固化的工序。
在获得层叠体4的上述工序中,分别将多个第一电子部件1的第一端子11与多个第二电子部件2的第二端子21相对置而配置,在各第一端子11与各第二端子21之间配置树脂层3而形成多个层叠体4,并一边加热多个层叠体4,一边从层叠体4的层叠方向同时对多个层叠体4进行夹压。
下面,详细说明本实施方式的电子装置的制造方法。首先,如图1所示地,准备第一电子部件1。该第一电子部件1例如是基板(柔性基板、刚性基板、陶瓷基板等)、半导体芯片、半导体元件搭载基板等。
该第一电子部件1具有第一端子11,该第一端子11具有第一端子主体111和在第一端子主体111表面设置的焊锡层112。对第一端子主体111的形状没有特别限定,可举出凸状或凹状的形状。另外,对第一端子主体111的材质没有特别限制,可以举出金、铜、镍、钯、铝。
对焊锡层112的材料没有特别限制,可举出含有选自于由锡、银、铅、锌、铋、铟和铜所组成的组中的至少两种以上的合金等。其中,优选为含有选自于由锡、银、铅、锌、铜所组成的组中的至少两种以上的合金。
焊锡层112的熔点为110~250℃、优选为170~230℃。焊锡层112既可以是对第一端子主体111进行焊锡镀敷而形成的层,也可以是对第一端子主体111配置焊锡球、焊锡膏并基于焊锡凸块等来构成的层。
在此,如图6所示,第一电子部件1是由多个进行连接而形成。例如,当第一电子部件1是基板时,各基板彼此之间连接而构成一张大型基板。此外,在大型基板中,如图6的虚线所示地形成有用于使第一电子部件1彼此之间切分的切割线。
接着,准备第二电子部件2(参照图1)。第二电子部件2,例如是半导体芯片、半导体元件搭载基板。该第二电子部件2具有第二端子21。
对第二端子21的形状没有特别限制,只要是能够对第一端子11进行焊锡接合的形状即可,例如可以举出凸状或凹状的形状。另外,对第二端子21的材质没有特别限制,可以举出金、铜、镍、钯、铝等。
接着,如图2所示地,将含有焊剂活性化合物和热固性树脂的树脂层3配置于第一电子部件1的第一端子11与第二电子部件2的第二端子21之间,并进行第一端子11与第二端子21的位置对准。
在此,对多个第一电子部件1与多个第二电子部件2的位置进行对准。在该工序中,获得在第一电子部件1与第二电子部件2之间配置有树脂层3的多个层叠体4。此外,多个层叠体4,例如向面内方向排列。
在此,第二电子部件2的第二端子21尚未处于切入树脂层3而与第一端子11相接触的状态。其中,第一端子11与第二端子21也可在将树脂介于第一端子11和第二端子21之间的状态下进行接触。
树脂层3是通过含有能够填充第一电子部件1与第二电子部件2之间的间隙的热固性树脂来构成。在树脂层3中所含的热固化性树脂,例如能够使用环氧树脂、氧杂环丁烷树脂、酚醛树脂、(甲基)丙烯酸酯树脂、不饱和聚酯树脂、邻苯二甲酸二烯丙酯树脂、马来酰亚胺树脂等。这些可单独使用或混合两种以上而使用。
其中,从固化性和保存性以及固化物的耐热性、耐湿性、耐药品性优异的方面考虑,优选使用环氧树脂。优选树脂层3在100~200℃中的最低熔融粘度为1~1000Pa·s,特别优选为1~500Pa·s。
通过使树脂层3在100~200℃中的最低熔融粘度处于上述范围,固化物中难以产生空隙(void)。最低熔融粘度,例如,通过使用作为粘弹性测定装置的流变仪,并对膜状试样以10℃/分钟的升温速度赋予频率1Hz的剪切而进行测定。
树脂层3是具有在进行焊锡接合时去除焊锡层112表面的氧化覆膜的作用的树脂层。通过使树脂层3具有焊剂作用,去除覆盖焊锡层112表面的氧化覆膜,因而能够施行焊锡接合。
为了使树脂层3具有焊剂作用,需要使树脂层3含有焊剂活性化合物。作为树脂层3中所含有的焊剂活性化合物,只要是能够用于焊锡接合的焊剂活性化合物就没有特别限制,但优选具有羧基、酚羟基中的任一者、或者同时具有羧基、酚羟基这两者的化合物等。
优选树脂层3中的焊剂活性化合物的配合量为1~30重量%,特别优选为3~20重量%。通过使树脂层3中的焊剂活性化合物的配合量在上述范围,能够提高树脂层3的焊剂活性,而且能够防止热固性树脂和未反应的焊剂活性化合物残留于树脂层3中。
此外,若未反应的焊剂活性化合物残留下来,则存在发生迁移的可能性。另外,在作为热固性树脂的固化剂而发挥作用的化合物中,存在也具有焊剂作用的化合物(下面,这种化合物也记作“焊剂活性固化剂”)。
例如,作为环氧树脂的固化剂而发挥作用的苯酚酚醛清漆树脂、甲酚酚醛清漆树脂、脂肪族二羧酸、芳香族二羧酸等,也具有焊剂作用。
作为热固性树脂的固化剂含有这种既作为焊剂活性化合物发挥作用也作为热固性树脂的固化剂发挥作用的焊剂活性固化剂的树脂层3,会成为具有焊剂作用的树脂层3。
此外,所谓具有羧基的焊剂活性化合物,是指在分子中存在一个以上羧基的焊剂活性化合物,既可以是液状也可以是固体。另外,所谓具有酚羟基的焊剂活性化合物,是指在分子中存在一个以上酚羟基的焊剂活性化合物,即可以是液状也可以是固体。
另外,所谓具有羧基和酚羟基的焊剂活性化合物,是指在分子中分别存在一个以上的羧基和酚羟基的焊剂活性化合物,即可以是液状也可以是固体。
其中,作为具有羧基的焊剂活性化合物,可以举出脂肪族酸酐、脂环式酸酐、芳香族酸酐、脂肪族羧酸、芳香族羧酸等。
作为具有羧基的焊剂活性化合物所涉及的脂肪族酸酐,可以举出丁二酸酐、聚己二酸酐、聚壬二酸酐、聚癸二酸酐等。
作为具有羧基的焊剂活性化合物所涉及的脂环式酸酐,可以举出甲基四氢苯酐、甲基六氢苯酐、甲基纳迪克酸酐、六氢苯酐、四氢苯酐、三烷基四氢苯酐、甲基环己烯二羧酸酐等。
作为具有羧基的焊剂活性化合物所涉及的芳香族酸酐,可举出邻苯二甲酸酐、偏苯三甲酸酐、均苯四甲酸酐、二苯甲酮四羧酸酐、乙二醇二偏苯三酸酯、甘油三偏苯三酸酯等。
作为具有羧基的焊剂活性化合物所涉及的脂肪族羧酸,可以举出:下列通式(1)所示的化合物,或者甲酸、乙酸、丙酸、丁酸、戊酸、新戊酸、己酸、辛酸、十二烷酸、十四烷酸、十六烷酸、十八烷酸、丙烯酸、甲基丙烯酸、巴豆酸、油酸、富马酸、马来酸、草酸、丙二酸、琥珀酸等。
HOOC-(CH2)n-COOH……(1)
式(1)中,n表示20以下的自然数。
作为具有羧基的焊剂活性化合物所涉及的芳香族羧酸,可以举出:苯甲酸、邻苯二甲酸、间苯二甲酸、对苯二甲酸、连苯三甲酸、偏苯三甲酸、均苯三甲酸、苯偏四甲酸、连苯四酸、均苯四甲酸、苯六甲酸、二甲苯基乙醇酸(トリイル酸)、二甲苯甲酸、2,3-二甲基苯甲酸、均三甲基苯酸、连三甲基苯酸、甲苯甲酸、肉桂酸、水杨酸、2,3-二羟基苯甲酸、2,4-二羟基苯甲酸、龙胆酸(2,5-二羟基苯甲酸)、2,6-二羟基苯甲酸、3,5-二羟基苯甲酸、没食子酸(3,4,5-三羟基苯甲酸),1,4-二羟基-2-萘甲酸、3,5-二羟基-2-萘甲酸等萘甲酸衍生物,酚酞啉,双酚酸等。
在这些具有羧基的焊剂活性化合物中,从焊剂活性化合物所具有的活性度、树脂层固化时产生的脱气量、以及固化后树脂层的弹性模量、玻璃化转变温度等的平衡性良好的观点出发,优选为上述通式(1)所示的化合物。
并且,在上述通式(1)所示的化合物中,从能够抑制固化后树脂层中弹性模量的增加的同时还能够提高第一电子部件1与第二电子部件2之间的粘接性的观点出发,特别优选式(1)中的n为3~10的化合物。
在上述通式(1)所示的化合物中,作为式(1)中的n为3~10的化合物,例如,可以举出n=3的戊二酸(HOOC-(CH2)3-COOH)、n=4的己二酸(HOOC-(CH2)4-COOH)、n=5的庚二酸(HOOC-(CH2)5-COOH)、n=8的癸二酸(HOOC-(CH2)8-COOH)和n=10的HOOC-(CH2)10-COOH等。
作为具有酚羟基的焊剂活性化合物,可举出酚类化合物,具体而言,例如,可举出苯酚、邻甲酚、2,6-二甲酚、对甲酚、间甲酚、邻乙基苯酚、2,4-二甲苯酚、2,5-二甲苯酚、间乙基苯酚、2,3-二甲苯酚、2,4,6-三甲苯酚、3,5-二甲苯酚、对叔丁基苯酚、儿茶酚、对叔戊基苯酚、间苯二酚、对辛基苯酚、对苯基苯酚、双酚A、双酚F、双酚AF、联酚、二烯丙基双酚F、二烯丙基双酚A、三苯酚、四苯酚等的含有酚羟基的单体类;苯酚酚醛清漆树脂、邻甲酚酚醛清漆树脂、双酚F酚醛清漆树脂、双酚A酚醛清漆树脂等。
如上所述的具有羧基或酚羟基中的任一者、或者同时具有羧基和酚羟基这两者的化合物,在与环氧树脂等热固性树脂的反应中立体地被插入。
因此,从提高固化后环氧树脂的三维立体网络的形成的观点出发,作为焊剂活性化合物,优选具有焊剂作用并作为环氧树脂的固化剂发挥作用的焊剂活性固化剂。
作为焊剂活性固化剂,例如可以举出在一分子中具有两个以上能够与环氧树脂进行加成的酚羟基和一个以上直接与显示焊剂作用(还原作用)的芳香族键合的羧基的化合物。
作为这样的焊剂活性固化剂可以举出:2,3-二羟基苯甲酸、2,4-二羟基苯甲酸、龙胆酸(2,5-二羟基苯甲酸)、2,6-二羟基苯甲酸、3,4-二羟基苯甲酸、没食子酸(3,4,5-三羟基苯甲酸)等苯甲酸衍生物;1,4-二羟基-2-萘甲酸、3,5-二羟基-2-萘甲酸、3,7-二羟基-2-萘甲酸等萘甲酸衍生物;酚酞啉;以及双酚酸等。对它们可以单独使用一种或者组合两种以上使用。
其中,为了使第一端子11和第二端子21的接合达到良好,特别优选使用酚酞啉。其理由被认为是:通过使用酚酞啉,能够在去除焊锡层112表面的氧化物后,使环氧树脂发生固化。
因此,能够抑制在未去除焊锡层112表面的氧化物的状态下环氧树脂发生固化的现象,能够使第一端子11与第二端子21的焊锡接合达到良好。
另外,优选树脂层3中的焊剂活性固化剂的配合量为1~30重量%,特别优选为3~20重量%。通过使树脂层3中的焊剂活性固化剂的配合量在上述范围,能够提高树脂层的焊剂活性,并同时防止热固性树脂和未反应的焊剂活性固化剂残留于树脂层中。
此外,若未反应的焊剂活性固化剂残留下来,则会发生迁移。另外,树脂层3可以含有无机填充材料。通过使树脂层3含有无机填充材料,能够提高树脂层3的最低熔融粘度,能够抑制在第一端子11和第二端子21之间形成间隙的现象。
此外,若树脂层3的最低熔融粘度非常低,则树脂层3的流动性会变得非常高、树脂层3进入第一端子11与第二端子21之间,从而造成第一端子11与第二端子21分离的现象。
在此,作为无机填充材料,可以举出二氧化硅、氧化铝等。并且,树脂层3可以含有固化促进剂。固化促进剂能够根据树脂层3中的热固性树脂的种类进行适当选择,例如,从提高涂膜成型性的观点出发,能够使用咪唑化合物。
作为咪唑化合物,可举出2-苯基羟基咪唑、2-苯基-4-甲基羟基咪唑等。
另外,当将树脂层3的构成成分的合计总量作为100时,固化促进剂的配合量例如为0.01重量%以上且5重量%以下。通过将固化促进剂的配合量设为0.01重量%以上,能够进一步有效发挥其作为固化促进剂的功能从而提高树脂层3的固化性。另外,通过将固化促进剂的配合量设为5重量%以下,能够进一步提高树脂层3的保存性。
作为在第一电子部件1与第二电子部件2之间配置树脂层3的方法,例如可以举出,
方法(1):准备将含有焊剂活性化合物的树脂组合物成型为膜状的树脂膜,并将该树脂膜层压于第一电子部件1或者第二电子部件2的方法;
方法(2):准备含有焊剂活性化合物的液状树脂组合物,并将该液状树脂组合物涂布于第一电子部件1或者第二电子部件2的表面的方法;
方法(3):准备将含有焊剂活性化合物的树脂组合物溶解或分散在溶剂中而成的树脂清漆,并将该树脂清漆涂布于第一电子部件1或者第二电子部件2的表面,接着使树脂清漆中的溶剂挥发的方法。
此外,方法(2)的液状树脂组合物不含有溶剂。
在此,如图6所示地,树脂层3是由多个连接而成,并构成跨越多个第一电子部件1的一张树脂片。更详细而言,树脂片是由多个树脂层3以及连结树脂层3彼此之间的连结部分来构成,通过连结部分来连接树脂层3彼此之间。
接着,在加热多个层叠体4的同时,沿着层叠体4的层叠方向进行夹压,如图3所示地,将第二端子21压入树脂层3中以使第一端子11和第二端子21进行接触。
此外,在本工序中,第一端子11和第二端子21并没有通过第一端子11的焊锡层112来进行焊锡接合。在该工序中使用图4~图5中所示的装置5。
装置5是形成层叠体4后,用于使第一端子11与第二端子21相接触的装置,所述层叠体4是通过将含有焊剂活性化合物和热固性树脂的树脂层3,配置于包含表面具有焊锡层112的第一端子11的第一电子部件1的第一端子11和、具有与该第一电子部件1的第一端子11相接合的第二端子21的第二电子部件2的第二端子21之间而形成。
该装置5具有夹具53,该夹具53是一种对多个层叠体4同时进行夹压的夹压构件。更详细而言,装置5具有:在内部配置多个层叠体4的炉(加热炉)51;在炉51内所配置的作为压力构件的上加热板521、下加热板522;以及夹具53。
炉51是由上模511和下模512构成,在由上模511和下模512构成的空间内配置有上加热板521、下加热板522。将上加热板521和下加热板522相对置而配置,在上加热板521与下加热板522之间,配置夹具53和多个层叠体4。一对加热板521、522被调整为比焊锡层112的熔点低的温度。
夹具53具有:形成有沟槽的上侧加压构件531和平板状的下侧加压构件532。在上侧加压构件531和下侧加压构件532之间,配置有多个层叠体4。上侧加压构件531是板状并且是平面矩形形状。
如图6、图7所示,在上侧加压构件531上形成有多个沟槽531A,一部分沟槽531A彼此进行交叉。在本实施方式中,沟槽531A形成为格状。
由沟槽531A来区分的区域531B与层叠体4的第二电子部件2抵接。一个层叠体4的第二电子部件2与一个区域531B抵接。下侧加压构件532是平面矩形形状,在下侧加压构件532上未形成有沟槽,由表面平坦的板材构成。
下侧加压构件532与上侧加压构件531的形成有沟槽531A的面互相对置。下侧加压构件532与层叠体4的第一电子部件1抵接。在此,作为下侧加压构件532、上侧加压构件531的材料并没有特别限制,可以举出金属板、陶瓷板等。
作为金属板,例如可以举出不锈钢板、钛板、铅板。另外,作为陶瓷板,可以举出玻璃板、氧化铝板、氮化硅板、氧化锆板。其中,优选为导热性良好的板。
接着,说明装置5的使用方法。首先,在炉51的外面,如图6所示地,在夹具53的上侧加压构件531和下侧加压构件532之间配置多个层叠体4,通过上侧加压构件531和下侧加压构件532来夹住多个层叠体4。
此时,如图6所示,沟槽531A的宽度W1(与沟槽531A的延伸方向垂直的方向上的长度)大于相邻的层叠体4之间的间隙W2。换言之,与由沟槽531A来区分的上述区域531B抵接的第二电子部件2的端面(侧面),与沟槽531A的侧面531C相比,更突出于沟槽531A内侧。如上所述地通过上侧加压构件531的宽度W1的沟槽531A来区分的区域531B,形成为与第二电子部件2的第二端子21相比更位于外侧的形状。
另外,在相邻的层叠体4中,树脂层3彼此相连接而形成,但相邻的第二电子部件2之间形成有空隙,因此会从上述空隙露出由树脂层3相连而构成的树脂片的一部分。树脂片的露出部分与沟槽531A对置。
图6是表示通过上侧加压构件531和下侧加压构件532来夹持多个层叠体4的状态的图。接着,将夹具53和多个层叠体4运送至炉51内。当将夹具53和多个层叠体4运送至炉51内时,可以使用运送膜等。
在此,预先使上加热板521、下加热板522处于被加热的状态。然后,将上模511向下模512侧移动,以关闭上模511和下模512之间的间隙。由此,使夹具53的下侧加压构件532与下加热板522抵接(参照图4)。
然后,如图5所示地,将上加热板521向下方移动,使上加热板521与夹具53的上侧加压构件531抵接。通过上加热板521将夹具53的上侧加压构件531向下方按压,由下加热板522和上加热板521来对夹具53进行夹压,并通过夹具53的上侧加压构件531、532对多个层叠体4进行夹压。
即,以低于焊锡层112的熔点并且低于树脂层3的固化温度的温度、即以低于树脂层3的热固性树脂的固化温度的温度(低于树脂层3中所含的热固性树脂成为依据JIS K6900的C阶树脂的温度)对多个层叠体4进行加热的同时,沿着层叠体4的层叠方向进行夹压,将第二端子21压入树脂层3中以使第一端子11和第二端子21相接触。
接着,将上模511、下模512分离,从炉51内搬出多个层叠体4。此外,在夹压多个层叠体4时,可以在真空下进行夹压。由此能够抑制在树脂层3中产生空隙。然后,使用图8所示的装置6,将多个层叠体4加热至第一端子11的焊锡层112的熔点以上,以使第一端子11与第二端子21进行焊锡接合。
装置6是能够在加压环境下加热层叠体4的装置,因此,作为其结构而言,例如具有将层叠体4收纳于内部的容器61以及用于将流体导入该容器61内的配管62。
容器61的特征在于其是压力容器,在容器61内设置层叠体4后,从配管62流入加热并加压后的流体至容器61内,由此对层叠体4进行加热加压。
另外,通过将流体从配管62流入容器61内并在加压环境下对容器61进行加热,也能够加热层叠体4。作为容器61的材料,可以举出金属,例如不锈钢、钛、铜、它们的合金等。
通过流体来对层叠体4进行加压时的加压力为0.1~10MPa、优选为0.5~5MPa。通过如此操作,固化后的树脂层3中难以产生空隙(void)。
此外,在本发明中,所谓通过流体进行加压,是指使层叠体4的环境压力比大气压仅高出加压力的部分。即,加压力10MPa是表示作用于层叠体的压力比大气压高10MPa。
在容器61内设置层叠体4后,层叠体4被加热的同时被加压。对层叠体4进行加压的流体,是从配管62导入容器61内,并对层叠体4进行加压。作为对层叠体4进行加压的流体,优选为氮气、氩气等非氧化性气体、空气等气体。
其中,优选使用非氧化性气体。通过使用非氧化性气体,能够使第一端子11和第二端子21的接合更加良好。此外,所谓非氧化性气体是指惰性气体、氮气等。
当层叠体4的温度达到焊锡层112的熔点后,在保持容器61内的温度和压力的同时,对层叠体4进行规定时间的加热和加压。由此,使层叠体4中的树脂层3发生固化。
然后,从装置6中取出层叠体4,根据需要再次使层叠体4进行固化。通过以上操作能够获得电子装置(参照图9)。在图9中,第一端子11和第二端子21通过焊锡层112进行接合,成为第二端子21的前端进入焊锡层112中的状态。此外,根据图6所示的虚线的切割线,对第一电子部件1之间、树脂层3之间进行切割,由此能够获得分离的多个电子装置。
下面,说明本实施方式的作用效果。基于本实施方式,一边对多个层叠体4进行加热,一边从层叠体4的层叠方向同时对多个层叠体4进行夹压。由此,能够抑制在对首个层叠体4的第一电子部件1与第二电子部件2进行夹压期间导致其它层叠体4的树脂层3发生固化的问题。因此,能够稳定地制造可靠性高的电子装置。
另外,在本实施方式中,通过加压流体对层叠体4进行加压而使树脂层3发生固化,因此能够抑制树脂层3的固化物中产生气泡等空隙。并且,当第一端子11和第二端子21进行焊锡接合时,若通过流体对层叠体4进行加压,则提高树脂层3的密度而使体积减少,由此能够使力作用于第一端子11和第二端子21进行压合的方向。
并且,当对第一端子11和第二端子21进行接合时,若通过流体对层叠体4进行加压,则能够抑制因树脂层3起泡而引起的树脂流动,能够可靠地减少第一端子11和第二端子21之间的错位。
另外,在本实施方式中,在夹压层叠体4的上侧加压构件531上形成有沟槽531A。当夹压层叠体4时,存在层叠体4的树脂层3从层叠体4中挤出的情况,但能够使被挤出的树脂层3流入沟槽531A内。由此能够防止树脂进入第二电子部件2与上侧加压构件531之间。
并且,在本实施方式中,与由沟槽531A来区分的上述区域531B抵接的第二电子部件2的端面,与沟槽531A的侧面531C相比,更突出于沟槽531A内侧。
当夹压层叠体4时,存在从层叠体4挤出的树脂沿着层叠体4的第二电子部件2的端面攀升的问题。由于与第二电子部件2的端面相比,沟槽531A的侧面531C未突出于沟槽531A内侧,因此,能够抑制攀升第二电子部件2端面的树脂附着于上侧加压构件531上的现象。由此,能够防止树脂对上侧加压构件531的污染。
另外,当在上侧加压构件531上未形成有沟槽531A时,有可能导致从层叠体4挤出的树脂附着在上述构件上从而使上述构件的层叠体4侧的面变得不平坦。因此,存在作用于层叠体4的载荷不均匀的问题。与此相对,在本实施方式中,如前面所述地能够防止树脂附着于上侧加压构件531上,因此能够抑制作用于层叠体4的载荷产生不均匀的现象。
此外,本发明并不局限于前述的实施方式,凡是在能够实现本发明目的的范围内进行的变形、改良等,均属于本发明。例如,在上述实施方式中对装置5中使用了夹具53,但并不限于此,也可以不使用夹具53。
另外,在上述实施方式中,第一电子部件1彼此之间、树脂层3彼此之间相连接,但并不限于此。例如,可以预先将第一电子部件1彼此之间、树脂层3彼此之间分离,在第一电子部件1之间、树脂层3之间存在间隙(空隙)。
并且,在上述实施方式中使第二电子部件2与上侧加压构件531抵接,但并不限于此,也可以使第一电子部件1与上侧加压构件531抵接。
另外,也可以在一侧的层叠体4中使第一电子部件1与上侧加压构件531抵接,而在另一侧的层叠体4中使第二电子部件2与上侧加压构件531进行抵接。其中,从端子彼此的接合稳定性的观点出发,优选如上述实施方式那样、与上侧加压构件531接触的部件是相同的部件。
并且,在上述实施方式中,例示了只在下侧面形成有用于区分区域531B(该区域531B与层叠体4的第二电子部件2抵接)的沟槽531A、而上侧面为平坦的上侧加压构件531。
但是,也可以如图10中作为夹压构件例示的上侧加压构件533那样,采用在上侧面上也形成有与下侧面的沟槽531A相同的沟槽533A从而区分区域533B的、上下对称的上侧加压构件533等来实施。在此所述的上下方向与图10的上下方向相对应。即,与层叠体4的层叠方向一致。
对如此的上侧加压构件533而言,由于上下是对称的,因此能够良好地防止因加压而引起的弯曲,能够更均匀地将多个第二电子部件2加压于第一电子部件1。而且,由于如上所述的上侧加压构件533是上下对称的,所以能够防止在制造时因压力等而在上下方向上发生弯曲等现象。
另外,对基于上述实施方式的电子装置的制造方法而言,在获得层叠体4的工序中,只例示了采用比树脂层3的固化温度低的温度对层叠体4进行加热的同时,通过作为压力构件的加热板521、522沿着层叠体4的层叠方向对层叠体4进行机械加压的情况。
但是,当如此地对层叠体4进行机械加压时,可以进一步通过空气等流体对层叠体4进行加压(未图示)。此时,不仅能够均匀地加压层叠体4,而且能够防止树脂层3中产生的气泡的膨胀。
并且,在获得上述层叠体4的工序中,也可以在低于树脂层3的固化温度并能够使树脂层3的粘度成为1Pa·s以上且10000Pa·s以下的温度下加热层叠体4。另外,在获得上述层叠体4的工序中,也可以在作为容器的容器61内配置层叠体4并向容器61内导入流体,从而通过流体对层叠体4进行加压。上述流体能够利用空气、氮。
此外,如上所述地对层叠体4进行加压的流体的压力,会成为开放炉51的上模511和下模512的内压。因此,优选能够如图11所示地分别对关闭炉51的上模511和下模512的压力,直接对层叠体4进行加压的加热板521、522的压力,以及对层叠体4进行加压的炉51内的大气压进行单独控制。
该申请要求基于2010年4月23日提出的日本专利申请“特愿2010-099553”、2010年7月1日提出的日本专利申请“特愿2010-150827”、2010年8月24日提出的日本专利申请“特愿2010-186870”的优先权,并且在此援引了这些申请中公开的所有内容。

Claims (20)

1.一种电子装置的制造方法,该电子装置包括:第一电子部件,包含表面具有焊锡层的第一端子;以及第二电子部件,具有与该第一电子部件的所述第一端子进行接合的第二端子,其特征在于,包括:
在所述第一电子部件的第一端子与所述第二电子部件的第二端子之间配置含有焊剂活性化合物和热固性树脂的树脂层,从而获得层叠体的工序;
将所述层叠体加热至所述第一端子的所述焊锡层的熔点以上,从而使所述第一端子与所述第二端子进行焊锡接合的工序;以及,
在通过流体对所述层叠体进行加压的同时使所述树脂层发生固化的工序,
在获得所述层叠体的所述工序中,分别将多个第一电子部件的第一端子与多个第二电子部件的第二端子相对置而配置,并在各第一端子与各第二端子之间配置所述树脂层而形成多个层叠体,一边加热多个层叠体,一边从所述层叠体的层叠方向同时对所述多个层叠体进行夹压。
2.如权利要求1所述的电子装置的制造方法,其特征在于,
所述多个层叠体向面内方向进行排列。
3.如权利要求1或2所述的电子装置的制造方法,其特征在于,
在获得层叠体的所述工序中,
用一对夹压构件夹压所述多个层叠体,
所述一对夹压构件中的一方夹压构件为形成有沟槽的构件,
当使形成有沟槽的所述构件与所述层叠体抵接时,
一方夹压构件的由所述沟槽区分的各区域分别与所述层叠体的第一电子部件或者第二电子部件抵接,并且,与所述沟槽的侧面相比,与由所述沟槽区分的所述区域抵接的第一电子部件或者第二电子部件的端面,更突出于沟槽内侧。
4.如权利要求3所述的电子装置的制造方法,其特征在于,
当使形成有沟槽的所述构件与所述层叠体抵接时,
由所述沟槽区分的所述区域,与各层叠体的第一电子部件和第二电子部件中的一方部件抵接,
多个层叠体的各树脂层相连接而构成树脂片,
从所述层叠体的层叠方向观察时,所述树脂片的一部分从相邻层叠体的所述一方部件之间露出,
当使形成有沟槽的所述构件与所述层叠体抵接时,露出的所述树脂片的一部分与所述沟槽相对置。
5.如权利要求1至4中任一项所述的电子装置的制造方法,其特征在于,
在获得层叠体的所述工序中,
一边以低于所述树脂层的固化温度的温度对所述层叠体进行加热,一边通过压力构件沿着所述层叠体的层叠方向对所述层叠体进行加压,并同时通过流体对所述层叠体进行加压。
6.如权利要求5所述的电子装置的制造方法,其特征在于,
在获得所述层叠体的所述工序中,
所述压力构件是加热板,并通过使所述加热板与层叠体抵接来对所述层叠体进行加热。
7.如权利要求5或6所述的电子装置的制造方法,其特征在于,
在获得所述层叠体的所述工序中,将所述层叠体配置于容器内,并向所述容器内导入所述流体,通过所述流体对所述层叠体进行加压。
8.如权利要求1或2所述的电子装置的制造方法,其特征在于,
获得层叠体的所述工序包括:
用一对夹压构件夹压所述多个层叠体的工序;以及
一边以低于所述树脂层的固化温度的温度对所述层叠体进行加热,一边通过压力构件从所述层叠体的层叠方向对所述一对夹压构件进行夹压,由此,在沿着所述层叠体的层叠方向对所述层叠体进行加压的同时,通过流体对所述层叠体进行加压的工序,
并且,在所述一对夹压构件中的一方夹压构件是形成有沟槽的构件,
当使形成有沟槽的所述构件与所述层叠体抵接时,
一方夹压构件的由所述沟槽区分的各区域,分别与所述层叠体的第一电子部件或者第二电子部件抵接,并且,与所述沟槽的侧面相比,与由所述沟槽区分的所述区域抵接的第一电子部件或者第二电子部件的端面,更突出于沟槽内侧。
9.如权利要求1至8中任一项所述的电子装置的制造方法,其特征在于,
在获得所述层叠体的所述工序中,
以使所述树脂层的粘度成为1Pa·s以上且10000Pa·s以下的温度,对所述层叠体进行加热。
10.一种装置,该装置是将含有焊剂活性化合物和热固性树脂的树脂层配置于包含表面具有焊锡层的第一端子的第一电子部件的所述第一端子、和具有与该第一电子部件的所述第一端子相接合的第二端子的第二电子部件的所述第二端子之间而形成层叠体后,用于使所述第一端子与所述第二端子相接触的装置,其特征在于,
具有同时对多个层叠体进行夹压的夹压构件。
11.如权利要求10所述的装置,其特征在于,
所述夹压构件同时对向面内方向排列的所述多个层叠体进行夹压。
12.如权利要求10或11所述的装置,其特征在于,
所述夹压构件具有夹压所述多个层叠体的一对夹压构件,
在所述一对夹压构件中的至少一方夹压构件是形成有沟槽的构件,
当使形成有沟槽的所述构件与所述层叠体抵接时,
将一方夹压构件的由所述沟槽区分的各区域,分别与所述层叠体的第一电子部件或者第二电子部件抵接,并且,与所述沟槽的侧面相比,与由所述沟槽区分的所述区域抵接的第一电子部件或者第二电子部件的端面,更突出于沟槽内侧。
13.如权利要求10至12中任一项所述的装置,其特征在于,
一边以低于所述树脂层的固化温度的温度对所述层叠体进行加热,一边通过压力构件沿着所述层叠体的层叠方向对所述层叠体进行加压,并同时通过流体对所述层叠体进行加压。
14.如权利要求13所述的装置,其特征在于,
所述压力构件是加热板,并通过使所述加热板与层叠体抵接来对所述层叠体进行加热。
15.如权利要求13或14所述的装置,其特征在于,
将所述层叠体配置于容器内,并向所述容器内导入所述流体,从而通过所述流体对所述层叠体进行加压。
16.如权利要求10至15中任一项所述的装置,其特征在于,
以使所述层叠体的所述树脂层的粘度成为1Pa·s以上且10000Pa·s以下的温度,对所述层叠体进行加热。
17.如权利要求12所述的装置,其特征在于,
一对所述夹压构件中形成有所述沟槽的至少一方所述夹压构件,形成为上下对称。
18.如权利要求17所述的装置,其特征在于,
对所述一对夹压构件中的至少一方夹压构件而言,在与所述第二电子部件抵接的下侧面形成有沟槽,并且,与该沟槽上下对称地,在上侧面也形成有沟槽。
19.一对夹压构件,其为权利要求17或18所述装置的一对夹压构件,其特征在于,
形成有所述沟槽的至少一方夹压构件是以上下对称的方式形成。
20.如权利要求19所述的一对夹压构件,其特征在于,
对至少一方夹压构件而言,在与所述第二电子部件抵接的下侧面形成有沟槽,并且,与该沟槽上下对称地,在上侧面也形成有沟槽。
CN2011800204408A 2010-04-23 2011-04-13 电子装置的制造方法和装置及其一对夹压构件 Pending CN102859674A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2010-099553 2010-04-23
JP2010099553 2010-04-23
JP2010150827 2010-07-01
JP2010-150827 2010-07-01
JP2010-186870 2010-08-24
JP2010186870 2010-08-24
PCT/JP2011/002184 WO2011132384A1 (ja) 2010-04-23 2011-04-13 電子装置の製造方法および装置、その一対の挟圧部材

Publications (1)

Publication Number Publication Date
CN102859674A true CN102859674A (zh) 2013-01-02

Family

ID=44833928

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800204408A Pending CN102859674A (zh) 2010-04-23 2011-04-13 电子装置的制造方法和装置及其一对夹压构件

Country Status (5)

Country Link
JP (1) JPWO2011132384A1 (zh)
KR (1) KR20130054283A (zh)
CN (1) CN102859674A (zh)
TW (1) TW201222689A (zh)
WO (1) WO2011132384A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111876580A (zh) * 2016-02-09 2020-11-03 株式会社东北磁材研究所 非晶态合金薄带的层叠体的热处理装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5867259B2 (ja) * 2012-04-17 2016-02-24 住友ベークライト株式会社 積層体の製造方法
JP5853944B2 (ja) * 2012-12-25 2016-02-09 住友ベークライト株式会社 半導体装置の製造方法
KR102539717B1 (ko) * 2021-06-29 2023-06-05 (주)나노테크 압력분포 조절이 가능한 브레이징 용접용 지그

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311709A (ja) * 2003-04-07 2004-11-04 Renesas Technology Corp 半導体装置の製造方法および半導体製造装置
WO2005006430A1 (ja) * 2003-07-11 2005-01-20 Sony Chemicals Corp. 電気部品の実装方法及び実装装置
CN101111932A (zh) * 2005-02-02 2008-01-23 索尼化学&信息部件株式会社 电气部件的安装装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2903697B2 (ja) * 1990-11-06 1999-06-07 セイコーエプソン株式会社 半導体装置の製造方法及び半導体装置の製造装置
JPH06349892A (ja) * 1993-06-10 1994-12-22 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP3301075B2 (ja) * 1999-04-20 2002-07-15 ソニーケミカル株式会社 半導体装置の製造方法
JP3537400B2 (ja) * 2000-03-17 2004-06-14 松下電器産業株式会社 半導体内蔵モジュール及びその製造方法
JP2002110744A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Ind Co Ltd 半導体実装装置、および半導体実装方法
JP4692101B2 (ja) * 2005-06-27 2011-06-01 ソニー株式会社 部品接合方法
JP2008147601A (ja) * 2006-12-13 2008-06-26 Yoshihiro Shimada フリップチップ接合方法及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311709A (ja) * 2003-04-07 2004-11-04 Renesas Technology Corp 半導体装置の製造方法および半導体製造装置
WO2005006430A1 (ja) * 2003-07-11 2005-01-20 Sony Chemicals Corp. 電気部品の実装方法及び実装装置
CN101111932A (zh) * 2005-02-02 2008-01-23 索尼化学&信息部件株式会社 电气部件的安装装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111876580A (zh) * 2016-02-09 2020-11-03 株式会社东北磁材研究所 非晶态合金薄带的层叠体的热处理装置

Also Published As

Publication number Publication date
KR20130054283A (ko) 2013-05-24
JPWO2011132384A1 (ja) 2013-07-18
TW201222689A (en) 2012-06-01
WO2011132384A1 (ja) 2011-10-27

Similar Documents

Publication Publication Date Title
JP5533663B2 (ja) 電子装置の製造方法
JP5780228B2 (ja) 半導体装置の製造方法
CN101960932B (zh) 焊料连接的方法、电子器件及其制造方法
WO2013027832A1 (ja) 半導体装置の製造方法、ブロック積層体及び逐次積層体
KR20120041733A (ko) 전자 부품의 제조 방법 및 전자 부품
US20120118939A1 (en) Process and apparatus for manufacturing semiconductor device
CN102859674A (zh) 电子装置的制造方法和装置及其一对夹压构件
EP2375879A1 (en) Flexible substrate and electronic device
JP2013033952A (ja) 半導体装置の製造方法
WO2012026091A1 (ja) 電子装置の製造方法
JP2014056954A (ja) 半導体装置の製造方法および半導体装置
KR102629861B1 (ko) 반도체용 접착제, 반도체 장치의 제조 방법 및 반도체 장치
WO2016185994A1 (ja) 電子装置の製造方法
JP2011228620A (ja) 電子装置の製造方法および電子装置の製造装置
WO2024009498A1 (ja) 半導体装置の製造方法、基板及び半導体素子
JP5316441B2 (ja) 電子部品の製造方法及び電子部品
KR20230043890A (ko) 반도체 장치를 제조하는 방법, 및 필름상 접착제
JP2013073955A (ja) 回路接続構造体の製造方法
JP2010073872A (ja) 半田の接続方法および電子機器
JP2016219763A (ja) 回路部材の接続方法
JP2011086763A (ja) 半導体装置の製造方法、半導体装置、および電子部品の製造方法および電子部品

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130102