CN102800788B - Light-emitting diode (LED) packaging structure and silver plating substrate - Google Patents
Light-emitting diode (LED) packaging structure and silver plating substrate Download PDFInfo
- Publication number
- CN102800788B CN102800788B CN201210257849.8A CN201210257849A CN102800788B CN 102800788 B CN102800788 B CN 102800788B CN 201210257849 A CN201210257849 A CN 201210257849A CN 102800788 B CN102800788 B CN 102800788B
- Authority
- CN
- China
- Prior art keywords
- layer
- die bond
- circuit
- aluminum layer
- bowl cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The invention discloses a light-emitting diode (LED) packaging structure which comprises a silver plating substrate, a die bond cup, an insulating dielectric layer and an LED wafer which is fixed in the die bond cup, wherein the die bond cup is arranged on the silver plating substrate; the silver plating substrate sequentially comprises a silver plate layer, a galvanization layer, an aluminum plate layer, an insulating layer and a radiating metal layer from top to bottom; the silver plate layer, the galvanization layer and the aluminum plate layer form a circuit layer; the aluminum plate layer is segmented into a block shape by the insulating dielectric layer; two poles of the LED wafer are respectively connected with the circuit layer through a metal line; the die bond cup is filled by a silica gel layer; and the LED wafer is packaged in the die bond cup by the silica gel layer. The invention also discloses an LED packaging structure.
Description
Technical field
The present invention relates to a kind of LED encapsulation structure and silvered substrates thereof.
Background technology
By semiconductor chip handing-over attachment on a printed circuit, the electrical connection of chip and substrate realizes with the sewing method that goes between chip on board encapsulation (Chip On Board, COB) technique, and covers with resin.This technique Problems existing is, first, owing to being Copper Foil under the substrate of substrate, Copper Foil can be good at energising but can not accomplish good optical treatment, and light efficiency can only at about 100Lm/w; Secondly, the structure of substrate circuit is fixing can not be changed, and each light source by changing LED chip kind, can only change the size of power; Again, the LED light source of this encapsulation does not have thermoelectricity to isolate, and heat conductivility is good not, optical texture not science.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of LED encapsulation structure and silvered substrates thereof, and its light efficiency is higher, good heat dissipation and be applicable to the LED chip of multiple power.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
There is provided a kind of LED encapsulation structure, the LED wafer comprising silvered substrates, die bond bowl cup, insulating medium layer and be fixed in die bond bowl cup, described die bond bowl cup is arranged on described silvered substrates; Described silvered substrates comprises electric silver layer, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer from top to bottom successively, wherein, and described electric silver layer, zinc coat and aluminum layer forming circuit layer; Described aluminum layer is divided into bulk by described insulating medium layer, and the two poles of the earth of described LED wafer are connected with circuit layer respectively by metal wire; Described die bond bowl cup is filled by layer of silica gel, and LED wafer is encapsulated in die bond bowl cup by described layer of silica gel.
Wherein, described insulating medium layer is formed by injection moulding bar, and described aluminum layer is split by described injection moulding bar.
Wherein, described die bond bowl cup is by being formed silvered substrates boring.
Wherein, the material of described layer of silica gel be fluorescent material with organic siliconresin mix glue.
Another technical solution used in the present invention is:
A kind of silvered substrates of LED encapsulation structure is provided, described silvered substrates comprises electric silver layer, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer from top to bottom successively, die bond bowl cup is arranged on described silvered substrates, described aluminum layer is divided into bulk by insulating medium layer, described electric silver layer, zinc coat and aluminum layer forming circuit layer, described circuit layer is used for being electrically connected with the two poles of the earth of LED wafer as circuit.
Wherein, described insulating medium layer is formed by injection moulding bar, and described aluminum layer is split by described injection moulding bar.
The invention has the beneficial effects as follows: LED encapsulation structure of the present invention and silvered substrates thereof, be divided into bulk by aluminum layer by insulating medium layer, and divided aluminum layer and zinc coat and electric silver layer forming circuit layer, form series-parallel circuit.The present invention for circuit with electric silver layer, increases the refraction of light, improves light efficiency and thermal diffusivity; Spotlight effect is improve by die bond bowl cup.Therefore, invention increases the overall light efficiency of light source, heat radiation and life-span, owing to there is no fixing circuit structure, therefore can realize free, circuit connection in series-parallel flexibly, a multiplex, enhance the applicability of light source to market, and reduce cost.
Accompanying drawing explanation
Fig. 1 is the floor map of LED encapsulation structure in an embodiment of the present invention;
Fig. 2 is the cutaway view of LED encapsulation structure in Fig. 1;
Fig. 3 is the flow chart of LED encapsulation structure manufacture method of the present invention;
Fig. 4 is the manufacture method flow chart of silvered substrates in LED encapsulation structure of the present invention.
Main element symbol description
100, LED encapsulation structure; 10, silvered substrates; 11, electric silver layer; 12, zinc coat;
13, aluminum layer; 14, insulating barrier; 15, heat radiating metallic layer; 16, layer of silica gel; 20, die bond bowl cup;
30, insulating medium layer; 40, LED wafer; 50, circuit layer.
Embodiment
By describing technology contents of the present invention, structural feature in detail, realized object and effect, accompanying drawing is coordinated to be explained in detail below in conjunction with execution mode.
See also Fig. 1, Fig. 2, for convenience of description, the present invention is described for the LED encapsulation structure of 6 die bond bowl cups, and in other embodiments, the quantity of die bond bowl cup designs as required, neither departs from the scope of protection of the invention.LED encapsulation structure 100 comprises silvered substrates 10, the die bond bowl cup 20 be arranged on silvered substrates 10, insulating medium layer 30 and the LED wafer 40 that is fixed in die bond bowl cup 20.
Described silvered substrates comprises electric silver layer 11, zinc coat 12, aluminum layer 13, insulating barrier 14 and heat radiating metallic layer 15 from top to bottom successively.In the present embodiment, described silvered substrates 10 is rounded, and in other embodiments, described silvered substrates 10 can be designed to other shapes as required.
Described electric silver layer 11, zinc coat 12 and aluminum layer 13 forming circuit layer 50.Wherein, described electric silver layer 11 is for the formation of circuit and the refraction increasing light.Described zinc coat 12 is for laying the groundwork for described electric silver layer 11.Described aluminum layer 13 is divided into bulk by described insulating medium layer 30, divided aluminum layer 13 forms divided circuit layer 50 with electric silver layer 11, zinc coat 12, circuit connection in series-parallel relation is formed by this segmentation, particularly, described insulating medium layer 30 is formed by injection moulding bar, and aluminum layer 13 is divided into bulk by described injection moulding bar.
Described insulating barrier 14 is for heat conduction and thermoelectricity isolation, and described heat radiating metallic layer 15 dispels the heat for the heat of deriving described insulating barrier 14, and in the present embodiment, this heat radiating metallic layer 15 is aluminium sheet material.
Described die bond bowl cup 20 is arranged on described silvered substrates 10, described LED wafer 40 is fixed on 20 li, die bond bowl cup, particularly, described die bond bowl cup 20 is formed by holing to silvered substrates 10, and described LED wafer 40 is fixed on 20 li, die bond bowl cup by crystal-bonding adhesive.The two poles of the earth of LED wafer 40 are connected with the electric silver layer 11 of silvered substrates 10 respectively by metal wire, thus form the power circuit of LED wafer 40, make power circuit conducting, make LED wafer 40 electrified light emitting.
The fluorescent material being filled with special ratios in described die bond bowl cup 20 mixes glue with organic siliconresin, forms layer of silica gel 16, thus is packaged into the MCOB light source with particular optical parameter.
In LED encapsulation structure of the present invention, the structure of die bond bowl cup 20, LED wafer 40, layer of silica gel 16 composition is for realizing the specific illumination effect of LED wafer 40; Electricity silver layer 11 has good refraction effect, improves the light efficiency of light source; Zinc coat 12 plays conductive and heat-conductive effect; Aluminum layer 13 is injection molding the block structure that bar is divided into, and divided aluminum layer 13 forms series-parallel circuit with zinc coat 12 and electric silver layer 11, and this series-parallel circuit has good heat-conducting effect due to the thermal conductivity of aluminum layer; Insulating barrier 14 and heat radiating metallic layer 15, as anti-electric, the radiator portion of LED encapsulation structure 100, can adopt the packing material of different conductive coefficient according to the difference of product power, thus play the effect of heat conduction, heat radiation, thermoelectricity separation.
Refer to Fig. 3, be the flow chart of LED encapsulation structure manufacture method of the present invention, this LED encapsulation structure manufacture method comprises step:
Step S31, provide silvered substrates, described silvered substrates 10 comprises electric silver layer 11, zinc coat 12, aluminum layer 13, insulating barrier 14 and heat radiating metallic layer 15 from top to bottom successively, described electric silver layer 11, zinc coat 12 and aluminum layer 13 forming circuit layer 50.Described aluminum layer 13 is divided into bulk by insulating medium layer 30, divided aluminum layer 13 forms divided circuit layer 50 with electric silver layer 11, zinc coat 12, form circuit connection in series-parallel relation, particularly, described insulating medium layer 30 is through the injection moulding bar that injection moulding is formed, described aluminum layer 13 is injection molding bar and is divided into bulk, and die bond bowl cup 20 is arranged on described silvered substrates 10.
Step S32, in the die bond bowl cup 20 scribbling crystal-bonding adhesive, arrange LED wafer 40, by the baking of suitable temperature, solidification crystal-bonding adhesive, makes LED wafer be fixed in die bond bowl cup 20.
Step S33, use metal wire connect the two poles of the earth of LED wafer 40 and the circuit layer 50 of silvered substrates 10, thus form the power circuit of LED wafer 40, and power circuit conducting makes LED wafer 40 electrified light emitting.
Step S34, in die bond bowl cup, fill special ratios fluorescent material and organic siliconresin mix glue, form layer of silica gel 16, thus be packaged into the MCOB light source with particular optical parameter.
Refer to Fig. 4, be the manufacture method flow chart of silvered substrates in LED encapsulation structure of the present invention, the manufacturing step of described silvered substrates comprises:
Step S311, pressing plate: to have corresponding with light source power and the insulating barrier 14 of certain conductive coefficient is sandwiched between aluminum layer 13 and heat radiating metallic layer 15, to play heat conduction, thermoelectricity buffer action, in the present embodiment, this heat radiating metallic layer 15 is aluminium sheet material.
Step S312, boring, injection moulding: get out the die bond bowl cup of predetermined number as requested and injection moulding insulating medium layer 30 forms injection moulding bar;
Step S313, zinc-plated, electricity silver: be covered with one deck zinc and silver on aluminum layer surface successively.
Experimental data shows, the MCOB light source of the present invention of 5W, and when its output voltage, electric current are 36V, 140mA, colour temperature is its luminous flux of light source of 6000K is 670Lm, and namely light efficiency can reach 134Lm/w, and aobvious finger is 73; Colour temperature is its luminous flux of light source of 3000K is 668Lm, and light efficiency can reach 133.6Lm/w, and aobvious finger is 71.Above data show, the light source that LED encapsulation structure of the present invention is formed has high light effect compared to prior art.
The invention has the beneficial effects as follows: LED encapsulation structure of the present invention and manufacture method thereof, be divided into bulk by aluminum layer by insulating medium layer, and divided aluminum layer and zinc coat and electric silver layer forming circuit layer, form series-parallel circuit.The present invention for circuit with electric silver layer, increases the refraction of light, improves light efficiency and thermal diffusivity; Spotlight effect is improve by die bond bowl cup.Therefore, invention increases the overall light efficiency of light source, heat radiation and life-span, owing to there is no fixing circuit structure, therefore can realize free, circuit connection in series-parallel flexibly, a multiplex, enhance the applicability of light source to market, and reduce cost.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (2)
1. a LED encapsulation structure, is characterized in that, the LED wafer comprising silvered substrates, die bond bowl cup, insulating medium layer and be fixed in die bond bowl cup, and described die bond bowl cup is arranged on described silvered substrates;
Described silvered substrates comprises electric silver layer, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer from top to bottom successively, wherein, and described electric silver layer, zinc coat and aluminum layer forming circuit layer;
Described aluminum layer is divided into bulk by described insulating medium layer, divided aluminum layer and electric silver layer, zinc coat form divided circuit layer, circuit connection in series-parallel relation is formed by this segmentation, this series-parallel circuit is due to the thermal conductivity tool heat-conducting effect of aluminum layer, and the two poles of the earth of described LED wafer are connected with the electric silver layer in circuit layer respectively by metal wire; Described die bond bowl cup is filled by layer of silica gel, and LED wafer is encapsulated in die bond bowl cup by described layer of silica gel;
Described insulating medium layer is formed by injection moulding bar, and described aluminum layer is split by described injection moulding bar;
Described die bond bowl cup is by being formed the aluminum layer boring in silvered substrates;
The material of described layer of silica gel be fluorescent material with organic siliconresin mix glue.
2. the silvered substrates of a LED encapsulation structure, it is characterized in that, described silvered substrates comprises electric silver layer from top to bottom successively, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer, die bond bowl cup is arranged on described silvered substrates, described die bond bowl cup is by being formed the aluminum layer boring in silvered substrates, described aluminum layer is split into bulk, divided aluminum layer and electric silver layer, zinc coat forms divided circuit layer, circuit connection in series-parallel relation is formed by this segmentation, this series-parallel circuit is due to the thermal conductivity tool heat-conducting effect of aluminum layer, electric silver layer in described circuit layer is used for being electrically connected with the two poles of the earth of LED wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210257849.8A CN102800788B (en) | 2012-07-23 | 2012-07-23 | Light-emitting diode (LED) packaging structure and silver plating substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210257849.8A CN102800788B (en) | 2012-07-23 | 2012-07-23 | Light-emitting diode (LED) packaging structure and silver plating substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102800788A CN102800788A (en) | 2012-11-28 |
| CN102800788B true CN102800788B (en) | 2015-05-27 |
Family
ID=47199832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210257849.8A Active CN102800788B (en) | 2012-07-23 | 2012-07-23 | Light-emitting diode (LED) packaging structure and silver plating substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102800788B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109219238A (en) * | 2017-07-03 | 2019-01-15 | 张文耀 | Using silica gel plate as the circuit board of substrate and its manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022148A (en) * | 2007-01-11 | 2007-08-22 | 鹤山丽得电子实业有限公司 | Method for producing light-emitted diode package structure |
| CN101552262A (en) * | 2008-03-31 | 2009-10-07 | 黄一峰 | Polycrystalline packaging unit and manufacture method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5367668B2 (en) * | 2009-11-17 | 2013-12-11 | スタンレー電気株式会社 | Light emitting device and manufacturing method thereof |
-
2012
- 2012-07-23 CN CN201210257849.8A patent/CN102800788B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022148A (en) * | 2007-01-11 | 2007-08-22 | 鹤山丽得电子实业有限公司 | Method for producing light-emitted diode package structure |
| CN101552262A (en) * | 2008-03-31 | 2009-10-07 | 黄一峰 | Polycrystalline packaging unit and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102800788A (en) | 2012-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102769076B (en) | Manufacturing method of package carrier | |
| CN102610735B (en) | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device | |
| CN102388473A (en) | Light-emitting diode package | |
| CN103500787A (en) | Ceramic COB (Chip-on-Board) packaged LED (light-emitting diode) light source with bottom capable of being directly soldered on heat sink | |
| CN202957287U (en) | Packaging structure of semiconductor light-emitting element | |
| CN105932019A (en) | Large power LED structure adopting COB packaging | |
| CN202195315U (en) | LED (light-emitting diode) surface light source device | |
| CN201853747U (en) | Heat-conducting and heat-dissipating structure of LED | |
| CN201688160U (en) | LED light source module based on metal core PCB substrate | |
| CN201242052Y (en) | Combined component of LED and heat conducting device | |
| CN101457917A (en) | High heat radiation optical module of LED and method for making same | |
| CN102800788B (en) | Light-emitting diode (LED) packaging structure and silver plating substrate | |
| CN103822143A (en) | LED (light emitting diode) street lamp light source module with silicon substrates | |
| CN102820406B (en) | Manufacturing method of LED (light emitting diode) packaging structure | |
| CN201233892Y (en) | Encapsulation construction for large power multiple LED chips | |
| CN102983123A (en) | Light-emitting diode (LED) integration module provided with upper and lower electrodes LED chip ceramics substrate and integration technique thereof | |
| CN201435407Y (en) | Novel substrate used for encapsulating LED | |
| CN103247742A (en) | LED heat radiation substrate and manufacturing method thereof | |
| CN204257641U (en) | Light-emitting device with light-transmitting flat plate | |
| CN103107264A (en) | Integrated light-emitting diode (LED) light source capsulation support frame | |
| CN103423617A (en) | Light emitting diode module | |
| CN202691653U (en) | LED (light emitting diode) module | |
| CN104733587B (en) | A kind of LED component of system in package | |
| CN201213135Y (en) | LED chip packaging construction having highly efficient heat radiating substrate | |
| CN102997074A (en) | Three-dimensional heat-dissipating light-emitting diode (LED) lighting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 591 1st floor, tonglong 2nd Road, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Xiamen City, Fujian Province Patentee after: Xiamen langxing Technology Co., Ltd Address before: 591 1st floor, tonglong 2nd Road, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Xiamen City, Fujian Province Patentee before: XIAMEN LANGXING ENERGY SAVING LIGHTING Co.,Ltd. |