CN102766892B - Micro-nano processing method and device - Google Patents

Micro-nano processing method and device Download PDF

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CN102766892B
CN102766892B CN 201210284722 CN201210284722A CN102766892B CN 102766892 B CN102766892 B CN 102766892B CN 201210284722 CN201210284722 CN 201210284722 CN 201210284722 A CN201210284722 A CN 201210284722A CN 102766892 B CN102766892 B CN 102766892B
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substrate
micro
electrode plate
nanofabrication
surface
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CN102766892A (en )
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张为国
史浩飞
董小春
夏良平
杜春雷
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中国科学院重庆绿色智能技术研究院
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Abstract

本发明公开了一种微纳加工方法和设备。 The present invention discloses a method and apparatus for micro-nanofabrication. 采用待加工衬底的各项参数,并依据导体表面电场分布方式确定电极板的结构;然后根据该电极板的结构和待加工衬底上预加工微纳结构指标确定电化学溶液;再将分别连接电流源的阳极或阴极的电极板与衬底按照相对方式放置于电化学溶液中,通电后,在预设时间内搅拌所述电化学溶液,利用该电化学溶液中的载流子制备位于所述衬底上符合所述预设指标的微纳结构。 Using the parameters of the substrate to be processed, and determines the structure of the electrode plate by surface electric field distribution of the conductors; and a pre-processing micro- and nanostructures index was determined according to the structure of the electrochemical electrode plate and the substrate to be processed; were then the anode or cathode electrode plate is connected to the current source and the substrate is placed in a relative manner according to the electrochemical solution, the power, the electrochemical solution was stirred for a preset time, the preparation of the sub-carrier in the electrochemical solution using located the indicator conforms to the predetermined micro-nano structures on the substrate. 本发明通过控制待微纳加工的衬底表面静电场分布来控制电化学溶液中的反应离子,最终在该衬底上制备出具有一定面形分布的微纳结构。 The reaction of the present invention to control the ion electrochemical solution by controlling the surface profile of the substrate to be micro-electrostatic field nanofabrication ultimately prepared micro- and nanostructures having a certain surface shape distributed on the substrate. 从而实现利用静电场操控三维及曲面衬底微纳结构低成本、高效率、高精度成形的目的。 Enabling use of electrostatic field and manipulate three-dimensional surface of the substrate micro-nano structure at low cost, the purpose of high efficiency, high precision forming.

Description

微纳加工方法和设备 Method and apparatus for micro-nanofabrication

技术领域 FIELD

[0001] 本发明涉及微纳加工技术领域,更具体的说,是涉及一种基于控制静电场分布的微纳加工方法和设备。 [0001] The present invention relates to a micro nanofabrication technical field workers, more particularly, relates to a method and apparatus for micro-nanofabrication based on the control of electrostatic field distribution.

背景技术 Background technique

[0002] 针对在微纳光电子、半导体、微机械、生物芯片、微纳生物探测等领域有着广泛应用的微纳结构,主流的微纳加工技术主要有传统的光刻技术、各种束写技术以及纳米压印技术等。 [0002] For micro-nano structure has a wide range of applications in the field of micro-nano photonics, semiconductors, micro-mechanical, biochips, micro-nano bio-detection and other mainstream micro-nanofabrication technologies include conventional photolithographic techniques, a variety of beam writing techniques and a nano-imprint technology.

[0003] 采用光刻技术进行微纳加工,可高效率地实现微纳结构图形的批量化制备。 [0003] using a photolithography technology micro nanofabrication, micro- and nanostructures prepared bulk patterns of high efficiency can be achieved. 但是, 在制备高面型精度的3D图形方面,该光刻技术却无能为力。 However, 3D graphics high Surface Accuracy of preparing a lithographic technique can not do anything. 同时,为防止光的衍射作用造成的图形虚边等不良影响,需掩膜板与图形紧密压合。 Meanwhile, in order to prevent adverse effect caused by light diffraction pattern like virtual edge, the mask pattern needs to be mated. 由于,掩模板为平面的硬质材料,因此只能在平面衬底上制备微纳图形,而在曲面衬底上制备微纳结构的则有较大难度。 Because, a hard material for the mask plane, it can only be prepared micro-nano pattern on a planar substrate, and the substrate on the surface of the greater degree of difficulty of the preparation of micro- and nanostructures.

[0004] 针对上述问题,各种束写技术虽然可实现3D微纳加工和曲面衬底微纳加工,但是,与光刻技术相同,两者均采用逐点写入方式,加工效率较低。 [0004] In response to these problems, although various techniques may be implemented write beam 3D micro and nanofabrication micro nanofabrication substrate surface, however, the same as a photolithography technique, both written point by point manner, the processing efficiency is low. 且,由于基于各种束写技术的设备较为昂贵而复杂,因此该技术仅适合用于研宄目的,难以应用于大规模生产。 Moreover, since the relatively expensive and complicated equipment based on a variety of beam writing technique, this technique is only suitable for the study based on object, difficult to apply to mass production.

[0005] 针对3D图形微加工和曲面衬底微加工方面的问题,近几年来刚兴起一新型微纳加工技术-纳米压印技术,其可实现平面图形以及圆柱形衬底上的微纳加工,具有效率高、 加工成本低等优点。 [0005] The problem of 3D graphics for micromachining and microfabrication of the substrate surface, just begun in recent years, a new micro nanofabrication technologies - nanoimprint technique, which can achieve planarization and a micro-pattern on a cylindrical substrate nanofabrication , having a high efficiency and low processing costs. 但是,采用该纳米压印技术难以去除残余的底胶,同时在球形以及表面有起伏的衬底上难以实现微纳结构的加工制备。 However, using the nanoimprint technology is difficult to remove the residual primer, while preparing a processed micro-nano structures, and difficult to implement on a spherical surface of a substrate having an uneven. 从而无法达到精确的实现微纳加工,尤其是在3D图形微加工和曲面衬底微加工方面。 Which can not achieve the precise implementation of micro nanofabrication, especially microfabrication and micromachining a substrate surface in 3D graphics.

[0006] 由此可知,如何低成本、高效率,高精确度的实现微纳结构的加工,特别是3D微纳结构和曲面衬底微纳结构的加工,是目前急需解决的课题之一。 [0006] It can be seen, how low-cost, high efficiency, micro and nano structures to achieve high precision machining, especially machining 3D micro and nano structures and micro-nano structure of the surface of the substrate, is currently one of the issues need to be resolved.

发明内容 SUMMARY

[0007] 有鉴于此,本发明提供了一种微纳加工方法和设备,以克服现有技术中无法实现在执行微纳加工过程中同时兼顾低成本、高效率、高清度的问题。 [0007] Accordingly, the present invention provides a method of micro and nano fabrication apparatus to overcome the prior art problems can not be realized taking into account cost, high efficiency, high-definition in the execution of a micro process of nanofabrication.

[0008] 为实现上述目的,本发明提供如下技术方案: [0008] To achieve the above object, the present invention provides the following technical solutions:

[0009] -种微纳加工方法,包括: [0009] - Microsatellite nanofabrication method, comprising:

[0010] 获取待微纳加工的衬底的各项参数,并依据导体表面电场分布方式- [0010] Gets the parameters to be micro nanofabrication substrate, and the conductor surface in a distributed fashion based on field -

Figure CN102766892BD00041

, 确定电极板的结构; , Determine the structure of the electrode plate;

[0011] 其中,各项参数包括所述衬底的衬底形状、尺寸、导电性、预加工微纳结构指标和衬底表面各位置处静电场的电场强度E,n为静电场的法向分量或径向分量,H为电极板各位置处的平均曲率半径; [0011] wherein the parameter comprises a substrate shape of the substrate, the electric field strength E at the position of each of the electrostatic field size, conductivity, index prefabricated micro- and nanostructures and the substrate surface, the n-electrostatic field normal radial component or components, H is the average radius of curvature at each position of the electrode plate;

[0012] 依据所述电极板的结构和所述衬底的预加工微纳结构指标,确定预设加工微纳结构的方式对应的电化学溶液的配置比例,并获取所述电化学溶液; [0012] pre-processed based micro- and nanostructures index structure of the electrode plate and the substrate, is determined allocation ratio preset processing mode corresponding to micro- and nanostructures of the electrochemical solution, and acquiring the electrochemical solution;

[0013] 依据预设加工微纳结构的方式将所述电极板和衬底分别连接电流源的阳极或阴极,并将所述电极板和衬底的部分或全部依据相对方式放置于所述电化学溶液中; [0013] processing a predetermined manner based micro- and nanostructures of the electrode plate and the substrate are respectively connected to the anode or cathode current source, and the portion of the electrode plate and the substrate or placed in a relative manner based on all of the electrical a chemical solution;

[0014] 上电,在预设时间内搅拌所述电化学溶液,使所述电化学溶液中的载流子向所述衬底上运动,获得位于所述衬底上符合所述预设加工微纳结构指标的微纳结构。 [0014] the power, stirring at a preset time of the electrochemical solution, so that the carriers moving in the electrochemical solution onto the substrate to obtain a substrate positioned in line with the preset processing micro- and nanostructures micro- and nanostructures indicators.

[0015] 优选的,所述预设加工微纳结构的方式包括电镀沉积或电解刻蚀; [0015] Preferably, the preset mode processing micro-nano structures comprises depositing a plating or electrolytic etching;

[0016] 当所述预设加工微纳结构的方式为电镀沉积时,所述电极板与所述电流源的阳极连接,所述衬底与所述电流源的阴极连接; [0016] When the predetermined processing of micro- and nanostructures way galvanic deposition, the plate connected to the anode electrode of the current source, the substrate and a cathode connected to the current source;

[0017] 当所述预设加工微纳结构的方式为电解刻蚀时,所述电极板与所述电流源的阴极连接,所述衬底与所述电流源的阳极连接。 [0017] When the preset mode processing micro-nano structures electrolytic etching of the electrode plate and the current source connected to the cathode, an anode connected to said substrate and said current source.

[0018] 优选的,所述预设加工微纳结构的方式包括电镀沉积或电解刻蚀; [0018] Preferably, the preset mode processing micro-nano structures comprises depositing a plating or electrolytic etching;

[0019] 所述电化学溶液中的阳离子与对应电镀沉积或电解刻蚀的所述衬底的材料为同一种元素。 [0019] The material of the electrochemical solution corresponding cationic deposition plating or electrolytic etching of the substrate is the same element.

[0020] 优选的,包括:在所述电化学溶液中相对平行正对放置、倾斜放置、垂直放置或偏移放置所述电极板与所述衬底; [0020] Preferably, comprising: said electrochemical solution is placed facing opposite parallel, tilted, or vertically offset placement of the electrode plate and the substrate;

[0021] 所述电极板与所述衬底的距离范围为0~10m米。 The [0021] electrode plate and the substrate distance range is 0 ~ 10m m.

[0022] 优选的,依据所述待微纳加工的衬底的各项参数,并依据导体表面电场分布方式确定的电极板的结构具体为: Structure [0022] Preferably, according to the parameters of the substrate to be a micro nanofabrication, the conductor surface and the electrode plate according to the determined electric field distribution of the mode specifically comprises:

[0023] 按照所述导体表面电场分布方式设置所述电极板表面上的微结构图形; [0023] microstructure pattern disposed on the surface of the electrode plate according to electric field distribution of the surface of the conductors;

[0024] 以圆形、方形、多边形,椭圆形,球形、椭球形、或各类不规则曲面中的任意一种形状或任意组合形状作为所述电极板的整体形状; [0024] In a circular, square, polygonal, elliptical, spherical, ellipsoid, or any one of various types of irregularly shaped surface or any combination of shapes as the overall shape of the electrode plate;

[0025] 以带通孔、通缝,孔或缝的轮廓作为所述电极板的闭合曲线; [0025] In the band-pass hole, through slits, holes or slits closed curve as the outline of the electrode plate;

[0026] 以导电材料;或者附有导电材料图形的绝缘材料;或者附有导电材料的半导体材料构成所述电极板; [0026] In a conductive material; or a pattern of conductive material with an insulating material; with a conductive material or a semiconductor material constituting the electrode plate;

[0027] 其中,所述电极板所占空间尺寸为1mm毫米X 1mm毫米X 0• 1mm毫米到10m 米X 10m米X 10m米;所述电极板至少包括一个。 [0027] wherein the dimension of the space occupied by the electrode plate X-1mm 1mm mm mm mm X 0 • 1mm X-10m to 10m m m m X-10m; includes at least one of the electrode plate.

[0028] 优选的,所述衬底由硅、锗、砷化镓、ITO、石墨烯、金属、塑料、PMMA、PDMS,碳化硅、 氮化硅或陶瓷材料构成; [0028] Preferably, the substrate of silicon, germanium, gallium arsenide, ITO, graphene, metals, plastics, PMMA, PDMS, silicon carbide, silicon nitride, or a ceramic material;

[0029] 所述衬底的形状包括:圆盘状、直边轮廓平板、曲线轮廓平板、椭球形、球形、抛物面状、双曲面状、马鞍面状、圆柱面状、指数面状,三角函数面状、锯齿面状、带通孔或无通孔的平面形状或曲面形状; [0029] The shape of the substrate comprising: a disk-shaped, flat straight edge profile, curvilinear profile flat, ellipsoidal, spherical, paraboloid, hyperboloid shaped, saddle-shaped surface, a cylindrical surface shape, planar index, trigonometric planar, zigzag planar with the through holes or non-through-hole or a planar shape curved shape;

[0030] 所述衬底所占空间尺寸为1mm毫米X 1mm毫米X0. 1mm毫米到10m米X 10m 米X 10m米。 [0030] The substrate footprint size of 1mm 1mm mm mm X-X0. 10m to 1mm mm m m X-X-10m 10m meters.

[0031] 优选的,所述电流源的电流范围包括:0mA毫安到1000A安; [0031] Preferably, the current range of the current source comprising: 0mA An milliamps to 1000A;

[0032] 所述预设时间包括:0~99999秒; [0032] the predetermined time comprises: from 0 to 99,999 seconds;

[0033] 其中,在所述预设时间内,所述电流源的电流随所述预设时间按直线、梳妆函数、 周期门函数、三角函数、锯齿波函数或指数函数的波形变化。 [0033] wherein within the predetermined time, the current source current with the predetermined time in a straight line, the waveform changes dressing function, door cycle function, trigonometric, exponential function or a sawtooth function.

[0034] 优选的,搅拌所述电化学溶液时的搅拌幅度低于所述电化学溶液的液面高度。 [0034] Preferably, when the magnitude of stirring of the electrochemical solution was stirred below the liquid level of electrochemical solution.

[0035] 优选的,当所述待微纳加工的衬底为多个时,单次采用所述微纳加工方法对一个所述待微纳加工的衬底进行微纳加工;或者,单次同时对多个所述待微纳加工的衬底进行微纳加工。 [0035] Preferably, when the substrate is to be micro-nanofabrication plurality, the use of a single micro-nanofabrication method of the substrate to be a micro-nanofabrication finely nanofabrication; or single said plurality of substrates to be simultaneously nanofabrication of micro-micro and nanofabrication.

[0036] -种微纳加工设备,包括: [0036] - Microsatellite nanofabrication apparatus, comprising:

[0037]待微纳加工的衬底; [0037] The substrate to be a micro-nanofabrication;

[0038] 电极板,所述电极板依据待微纳加工的衬底的各项参数,以及导体表面电场分布方式- [0038] The electrode plate of the electrode plate to be based on the parameters of the micro-nanofabrication of the substrate, and the conductor surface electric field distribution mode -

Figure CN102766892BD00061

确定结构; Structure determination;

[0039] 其中,各项参数包括所述衬底的衬底形状、尺寸、导电性、预加工微纳结构指标和衬底表面各部分静电场的电场强度E,n为静电场的法向分量或径向分量,H为电极板个位置处的平均曲率半径; [0039] wherein the parameter comprises a substrate shape of the substrate, each portion of the electrostatic field strength E field size, conductivity, index prefabricated micro- and nanostructures and the substrate surface, the n-electrostatic field component normal or radial component, H is the average radius of curvature of the electrode plate positions;

[0040] 溶液槽,所述溶液槽用于承载依据所述电极板的结构和所述衬底的预加工微纳结构指标,确定预设加工微纳结构的方式对应的配置比例的电化学溶液,以及部分或全部设置于所述电化学溶液中的所述电极板和衬底; [0040] The tank solution, the solution for carrying tank structure according to the pre-processed electrode plate and the micro- and nanostructures index of the substrate, electrochemical solution is determined allocation ratio preset mode processing micro-nano structures corresponding , and some or all of the electrochemical electrode disposed on the plate and the substrate solution;

[0041] 电流源,所述电流源的阳极或阴极依据预设加工微纳结构的方式将所述电极板和衬底分别连接; [0041] The current source, the anode or cathode of the current source based on a preset mode processing micro-nano structure of the electrode plate and the substrate are connected;

[0042]探入所述溶液槽内的搅拌装置,所述搅拌装置探入所述电化学溶液的部分为绝缘体,当所述电流源上电时,所述搅拌装置在预设时间内搅拌所述电化学溶液,使所述电化学溶液中的载流子在所述衬底上运动,获得位于所述衬底上符合所述预设加工微纳结构指标的微纳结构。 [0042] the probe into the solution tank of the stirring means, said stirring means of said electrochemical probe solution into the insulator part, when the power of the current source, said stirring means stirring at a preset time said electrochemical solution, the carriers of the electrochemical solution on the substrate movement, the predetermined processing is obtained micro- and nanostructures compliance indicators micro- and nanostructures located on a substrate.

[0043]经由上述的技术方案可知,与现有技术相比,本发明公开了一种微纳加工方法和设备。 [0043] via the known technical solution, compared with the prior art, the present invention discloses a method and apparatus for micro-nanofabrication. 采用待微纳加工的衬底的各项参数,并依据导体表面电场分布方式确定电极板的表面形貌和面积,及确定电极板的结构;然后根据该电极板的结构和待微纳加工的衬底的预加工微纳结构指标确定电化学溶液;再将分别连接电流源的阳极或阴极的电极板与衬底部分或全部按照相对方式放置于电化学溶液中,在通电后,在预设时间内搅拌所述电化学溶液,利用该电化学溶液中的载流子制备位于所述衬底上符合所述预设加工微纳结构指标的微纳结构。 Using the parameters of the substrate to be a micro nanofabrication and to determine the surface topography and the surface area of ​​the electrode plate in accordance with an electric field distribution of the conductors, and determination of the structure of the electrode plate; then, according to the structure of the electrode plate and be in micro-nanofabrication pre-processing micro- and nanostructures index of the substrate is determined electrochemical solution; and then the electrode plate are respectively connected to the anode or the cathode current source in accordance with some or all of the substrate is placed in an electrochemical manner relative to the solution, after power preset the solution was stirred for electrochemical time, the electrochemical solution prepared sub carriers positioned in line with the substrate by using the preset processing micro- and nanostructures index micro- and nanostructures. 上述本发明通过控制待微纳加工的衬底表面静电场分布来控制电化学溶液中的反应离子,或者载流子向衬底各部位运动的速率,从而控制各个衬底相应位置处按照预设加工微纳结构的方式的速率,最终在该衬底上制备出具有一定面形分布的微纳结构。 The reaction of the present invention to control the electrochemical ion solution to be controlled by the micro-nanofabrication electrostatic field distribution of the surface of the substrate, or the movement of carriers to the various parts of the substrate speed, thereby controlling the respective positions at each substrate according to the preset rate mode processing micro-nano structures, micro and nano structures finally prepared surface shape having a certain distribution on the substrate. 从而实现利用静电场操控三维及曲面衬底微纳结构低成本、高效率、高清度成形的目的。 Thereby achieving a three-dimensional object using an electrostatic field manipulation and the substrate surface micro-nano structure at low cost, high efficiency, high definition of the forming.

附图说明 BRIEF DESCRIPTION

[0044] 为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。 [0044] In order to more clearly illustrate the technical solutions in the embodiments or the prior art embodiment of the present invention, briefly introduced hereinafter, embodiments are described below in the accompanying drawings or described in the prior art needed to be used in describing the embodiments the drawings are only examples of the present invention, those of ordinary skill in the art is concerned, without creative efforts, can derive other drawings from the accompanying drawings provided.

[0045] 图1为本发明实施例公开的控制静电场分布的微纳结构电化学加工方法的原理示意图; [0045] FIG. 1 is a schematic principle of micro- and nanostructures electrochemical machining control method according to the disclosed embodiment of the electrostatic field distribution of the present invention;

[0046] 图2为本发明实施例一公开的一种微纳加工方法的流程图; [0046] FIG 2 is a flowchart A micro nanofabrication method according to a disclosed embodiment of the present invention;

[0047]图3为本发明实施例公开的在各种衬底上制作微纳结构示意图; [0047] Fig 3 a schematic embodiment disclosed embodiments micro- and nanostructures formed on the various substrates of the present invention;

[0048] 图4为本发明实施例公开的电极板结构示意图; [0048] FIG 4 schematically illustrating the electrode plate structure of the present embodiment of the disclosed embodiment of the invention;

[0049] 图5为本发明该实施例二公开的一种微纳加工设备的结构示意图; [0049] Figure 5 discloses a schematic view of two micro nanofabrication device according to the embodiment of the present invention;

[0050] 图6为本发明实施例三公开的一种微纳加工方法的流程图。 [0050] The flowchart of FIG. 6 A micro nanofabrication methods disclosed according to a third embodiment of the present invention.

具体实施方式 Detailed ways

[0051] 下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。 [0051] below in conjunction with the present invention in the accompanying drawings, technical solutions of embodiments of the present invention are clearly and completely described, obviously, the described embodiments are merely part of embodiments of the present invention, but not all embodiments example. 基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。 Based on the embodiments of the present invention, all other embodiments of ordinary skill in the art without any creative effort shall fall within the scope of the present invention.

[0052]本发明采用控制静电场分布的电化学加工方法,根据衬底上待加工微纳结构的指标,结合静电场在导体表面分布的微分方程,设计电极板结构,并根据电极板和待微纳加工结构的性质配置电化学溶液。 [0052] The electrochemical machining method of the present invention to control the electrostatic field distribution, based on the index on a substrate to be processed micro and nano structures, Differential binding electrostatic field distribution on the surface of the conductor, the electrode plate structure design, and be in accordance with the electrode plates and Micromaser nanofabrication structure disposed electrochemical solution. 并将电极板与衬底分别连接电流源的阳极和阴极,以正对方式置入电化学溶液中。 The substrate and the electrode plate are respectively connected to the anode and cathode of the current source, placed in a positive manner for the electrochemical solution. 在通电后使得电化学溶液中的载流子以不同速率向衬底的各个位置运动,并在衬底上被还原为金属微纳结构。 After electrochemical power so that the carrier solution at different rates to the respective position of the substrate, and the metal is reduced to micro-nano structures on the substrate. 最后通过搅拌溶液,使得衬底表面附近的载流子得到及时补充。 Finally, the solution was stirred, so that the carrier near the surface of the substrate replenish. 实现在任意面形的衬底上获得任意二维或三维微纳尺度图形,以便于解决目前较流行的光刻技术与各种复制印刷技术,以及3D微纳结构难以加工的难题,同时解决了目前难以在曲面衬底上制备微纳图形的问题。 Implement any two or three dimensional micro obtained nano scale pattern on an arbitrary surface shape of the substrate, in order to solve the more popular photolithography and various transfer printing techniques, and difficulties 3D micro- and nanostructures are difficult to process, while addressing the problems micro-nano pattern is difficult to be prepared on the surface of the substrate. 具体过程通过以下实施例进行详细说明。 The specific process described in detail by the following examples. [0053]实施例一 [0053] Example a

[0054] 如图1所示,为控制静电场分布的微纳结构电化学加工方法的原理示意图,其中1 为电极板,2为待加工衬底,3为要制备的微纳结构,4为虚拟静电场在衬底附近强度分布,5 为电场强度的颜色标度尺,颜色越深代表场强越强,6为待加工衬底表面附近一平面(虚线位置处)上场强的轮廓曲线,7为电化学溶液中的载流子。 [0054] As shown in FIG. 1, a schematic diagram of the control principle of electrochemical machining method of micro- and nanostructures electrostatic field distribution, wherein the electrode plate 1, 2 is a substrate to be processed, to 3 micro-nano structure to be produced, 4 virtual electrostatic field intensity distribution near the substrate, 5 is a color field intensity gauge, the representative of the darker stronger field strength, 6 near the surface of the substrate to be processed is a strong profile curve playing a plane (at a broken line position) , 7 of the carrier in the electrochemical solution.

[0055] 基于上述结构,如图2所示,为本发明实施例公开的一种微纳加工方法的流程图, 主要包括以下步骤: [0055] Based on the above configuration, shown in Figure 2, a flowchart A micro nanofabrication method of the invention according to the disclosed embodiment, includes the following steps:

[0056]步骤S101,获取待微纳加工的衬底的各项参数,并依据导体表面电场分布方式 [0056] step S101, the acquisition parameters of the substrate to be a micro nanofabrication and conductor surface electric field distribution according to the way

Figure CN102766892BD00071

,确定电极板的结构。 Determining the structure of the electrode plate.

[0057] 在步骤S101中,各项参数包括所述衬底的衬底形状、尺寸、导电性、预加工微纳结构指标和衬底表面各部分静电场的电场强度。 [0057] In step S101, the parameters of the substrate the substrate comprising shape, size, conductivity, electric field intensity of each portion of the electrostatic field of micro- and nanostructures prefabricated indicators and the substrate surface.

[0058]在 [0058] In

Figure CN102766892BD00072

中,E为衬底表面各部分静电场的电场强度,n为静电场的法向分量或径向分量,H为电极板各位置处的平均曲率半径。 , E is the electric field strength of the electrostatic field of each portion of the substrate surface, n is the normal component of the electrostatic field or the radial component, H is the average radius of curvature at each position of the electrode plate.

[0059] 在该步骤S101中确定电极板的结构时,根据电极板结构表面为等势面,并且电场线垂直于电极板表面的原理,结合上述给出的导体表面电场分布方式能够得到具体的电极板,或者根据上述需要可以设计出对应的电极板,从而使得在待微纳加工的衬底表面得到预期的电场分布。 [0059] When the structure of the electrode plates is determined at step S101, the structure of the electrode plate surface equipotential surface, and the electric field lines are perpendicular to the principle surface of the electrode plate, the bonding surface electric field distribution given above embodiment can provide concrete conductor the electrode plate, or the above-described needs can be designed corresponding to the electrode plate, so that the electric field in the substrate to obtain the desired surface profile to be micro nanofabrication.

[0060] 步骤S102,依据所述电极板的结构和所述衬底的预加工微纳结构指标,确定预设加工微纳结构的方式对应的电化学溶液的配置比例,并获取所述电化学溶液。 [0060] step S102, the pre-processing according to micro- and nanostructures of the electrode plate structure index and said substrate, determined allocation ratio preset processing corresponding to the configuration of a micro-nano electrochemical solution, and acquiring the electrochemical solution.

[0061] 在步骤S102中,预设加工微纳结构的方式包括电镀沉积和电解刻蚀。 [0061] In step S102, the presetting mode nanostructure processing comprises etching and electrolytic plating deposition. 在确定电化学溶液的过程中,根据当前的预设加工微纳结构的方式,电镀沉积或电解刻蚀确定对应的电镀化学溶液或电解化学溶液的配置比例,以及确定电镀化学溶液或电解化学溶液中的阳离子,或者载流子与进行电镀沉积或电解刻蚀的所述衬底的材料为同一种元素。 Determining the electrochemical solution in the process according to the current default mode processing micro-nano structures, electroless deposition or electrolytic etching determines the allocation ratio corresponding to the electrolytic plating chemical solution or a chemical solution, and determining a chemical solution or electrolytic plating chemical solution cations, and a carrier or substrate for the electroless deposition or electrolytic etching materials are the same element.

[0062] 另外,配置而成的电化学溶液同时需要满足其对溶液槽、电极极板、待加工衬底无腐蚀作用的要求。 [0062] Further, the configuration of the electrochemical solution from the same time meet the needs of its non-corrosive to the substrate solution reservoir, electrode pad, to be processed.

[0063] 步骤S103,依据预设加工微纳结构的方式将所述电极板和衬底分别连接电流源的阳极或阴极,并将所述电极板和衬底的部分或全部依据相对方式放置于所述电化学溶液中。 [0063] step S103, the processing according to the preset embodiment of the micro- and nanostructures of the electrode plate and the substrate are respectively connected to the anode or cathode current source, and the portion of the electrode plate and the substrate or placed in a relative manner based on all the electrochemical solution.

[0064] 在步骤S103中,所述预设加工微纳结构的方式包括电镀沉积或电解刻蚀;当所述预设加工微纳结构的方式为电镀沉积时,所述电极板与所述电流源的阳极连接,所述衬底与所述电流源的阴极连接。 [0064] In step S103, the preset mode processing micro-nano structures comprises depositing a plating or electrolytic etching; when the preset mode processing micro-nano structures for the galvanic deposition, the electrode plate and the current source connected to the anode, and a cathode connected to said substrate and said current source.

[0065] 当所述预设加工微纳结构的方式为电解刻蚀时,所述电极板与所述电流源的阴极连接,所述衬底与所述电流源的阳极连接。 [0065] When the preset mode processing micro-nano structures electrolytic etching of the electrode plate and the current source connected to the cathode, an anode connected to said substrate and said current source.

[0066] 通过上述步骤S103将电极板与待微纳加工的衬底部分或全部放于盛有电化学溶液的溶液槽内,并通过不同的预设加工微纳结构的方式是使电极板和待微纳加工的衬底分别接电流源的正负两极,从而在待微纳加工的衬底表面形成稳恒静电场。 [0066] The above-described steps S103 through the discharge portion of the electrode plate and the substrate of micro or nanofabrication be filled with a solution to all of the electrochemical solution tank, and through different preset processing micro- and nanostructures of the electrode plate and the way the substrate to be micro nanofabrication current sources are respectively connected positive and negative electrodes so that the surface of the substrate to be formed micro nanofabrication steady electrostatic field.

[0067] 另外,在步骤S103中所述电化学溶液中可采用相对平行正对放置、倾斜放置、垂直放置或偏移放置所述电极板与所述衬底,也就是说,电极板与衬底可平行正对放置、倾斜放置、垂直放置或偏移放置的方式放置于电化学溶液中;其中,电化学溶液可浸没电极板和衬底,也可部分浸没电极板和衬底;电极板与衬底距离可调,调整范围为〇~l〇m米。 [0067] Further, the electrochemical solution employed relative to n parallel placed tilted at step S103, placed vertically or offset of the electrode plate and the substrate, i.e., the electrode plate and the substrate n may be parallel to the bottom is placed, tilted, vertically placed or placed in an offset manner is placed in an electrochemical solution; wherein the electrochemical solution submersible electrode plate and the substrate, may be partially immersed electrode plate and the substrate; electrode plate substrate distance is adjustable, adjustment range ~ l〇m square meters.

[0068] 在执行步骤S103后,还进一步的可以包括对电极板与衬底的相对位置进行调整, 以及对电流源的电流大小和上电方式进行调整。 [0068] After the execution of step S103, the further electrode plate may include adjusting the relative position of the substrate, and the current magnitude of the current source and the electrically adjusted.

[0069] 步骤S104,上电,在预设时间内搅拌所述电化学溶液,使所述电化学溶液中的载流子在所述衬底上运动,获得位于所述衬底上符合所述预设加工微纳结构指标的微纳结构。 [0069] step S104, power, stirring at a preset time of the electrochemical solution, the carriers of the electrochemical solution is in motion on the substrate, is obtained conforms to the substrate located pre-processing of micro- and nanostructures index of micro- and nanostructures.

[0070] 在步骤S104中,通过上电后在预设时间内搅拌电化学溶液,使所述电化学溶液中的载流子在所述衬底上运动,进而通过构成的电场在衬底不同位置处的强弱分布获得相应的电流密度分布,从而在衬底表面获得不同的金属沉积或刻蚀速度,最终得到位于所述衬底上符合所述预设加工微纳结构指标的微纳结构。 [0070] In step S104, after power through electrochemical solution was stirred for a preset time, the carriers of the electrochemical solution is in motion on the substrate, and further by an electric field in the substrate constitute different intensity distribution obtained at the position corresponding to the current density distribution, so as to obtain different rate of metal deposition or etching on the substrate surface, the finally obtained in said predetermined processing micro- and nanostructures index micro- and nanostructures on the substrate conforms to the . 其中,预设加工微纳结构指标的微纳结构既为预期面形的二维或三维微纳图形结构。 Wherein the predetermined processing micro- and nanostructures Index micro- and nanostructures both the expected two or three dimensional surface shape of the micro-nano pattern structure.

[0071] 另外,在执行步骤S104的过程中,通过搅拌电化学溶液,能够使得衬底表面附近的载流子得到及时补充,以便于更充分的对衬底完成微纳加工。 [0071] Further, during the execution of step S104, the electrochemical solution by stirring, so that the carrier can be close to replenish the surface of the substrate, in order to more fully complete the micro-nano fabrication substrate.

[0072] 在执行步骤S104中,上电的电流源的电流范围包括:0mA毫安到100A安,且可调节。 [0072] In the execution step S104, the current source of the current range include: 0mA mA to 100A safe, and adjustable. 该电流源可以具体为稳流源。 The current source may be embodied as a constant current source. 该预设时间的范围包括:〇~9999s秒;其中,在所述预设时间内,所述电流源的电流随所述预设时间按直线、梳妆函数、周期门函数、三角函数、锯齿波函数或指数函数的波形变化。 The predetermined range of time comprises: second square ~ 9999s; wherein within the predetermined time, the current source current with the predetermined time in a straight line, dressing function, door cycle, trigonometric, sawtooth variation waveform function or exponential function.

[0073] 另外,在执行步骤S104中的搅拌时,浸没于电化学溶液部分的搅拌装置为绝缘体,在其搅拌所述电化学溶液时的搅拌幅度低于所述电化学溶液的液面高度。 [0073] Further, when stirring is performed in step S104, immersed in a stirred solution of part of an electrochemical device is an insulator, while stirring the amplitude of the electrochemical stirred solution is below the liquid level of electrochemical solution.

[0074] 通过执行上述步骤S104,通过搅拌电化学溶液,使得载流子浓度均匀分布。 [0074] By performing the above step S104, the electrochemical solution by stirring, so that a uniform distribution of the carrier concentration. 然后再可控制的预设时间内通电加工,最后,待加工的微纳图形满足预期指标时,断电取出附有微纳结构的衬底。 Then a preset time and then may control the energization processing, and finally, when the micro-nano pattern to be processed to meet the expectations index, taken off the substrate with micro and nano structures.

[0075] 在上述本发明该实施例公开的步骤S101~S104中的方法中,通过采用控制静电场分布的电化学加工方法,可在任意面形的衬底上获得任意二维或三维微纳尺度图形。 [0075] In the method disclosed in the procedure of Example embodiment of the present invention in S101 ~ S104, by using electrochemical machining method of controlling the distribution of the electrostatic field, any two or three dimensions can be obtained on any surface micro-nano-shaped substrate scale graphics. 同时, 从原理上完全不同于目前较流行的光刻技术与各种复制印刷技术,其分辨率不受衍射极限和模具尺寸的限制,能够解决了3D微纳结构难以加工的难题,同时解决了目前难以在曲面衬底上制备微纳图形的问题。 Meanwhile, in principle completely different from the currently more popular with various photolithographic techniques transfer printing technology, which is not diffraction-limited resolution and limit the size of the mold, it is possible to solve the 3D micro- and nanostructures difficult processing problems, while addressing the problems micro-nano pattern is difficult to be prepared on the surface of the substrate. 另外,本发明该实施例公开的方法其加工效率较高,无需复杂设备,成本也较低,进一步的实现利用静电场操控三维及曲面衬底微纳结构低成本、高效率、高清度成形的目的。 Further, this embodiment of the disclosed method embodiment of the present invention is its high processing efficiency, without complex equipment, lower cost, to achieve further manipulated using electrostatic field and a three-dimensional micro-nano structure at low cost, high efficiency, high-definition shaping of the surface of the substrate purpose.

[0076] 在上述本发明公开的实施例的基础上,需要说明的是: [0076] On the basis of the above disclosed embodiment of the present invention, should be noted that:

[0077] 需要进行微纳加工的衬底由硅、锗、砷化镓、ITO、石墨烯、金属、塑料、PMMA、PDMS, 碳化娃、氮化娃或陶瓷材料构成; [0077] substrate that is required by the nanofabrication of silicon, germanium, gallium arsenide, ITO, graphene, metals, plastics, PMMA, PDMS, baby carbide, nitride, or a ceramic material baby;

[0078] 所述衬底的形状包括:圆盘状、直边轮廓平板、曲线轮廓平板、椭球形、球形、抛物面状、双曲面状、马鞍面状、圆柱面状、指数面状,三角函数面状、锯齿面状、带通孔或无通孔的平面形状或曲面形状; [0078] The shape of the substrate comprising: a disk-shaped, flat straight edge profile, curvilinear profile flat, ellipsoidal, spherical, paraboloid, hyperboloid shaped, saddle-shaped surface, a cylindrical surface shape, planar index, trigonometric planar, zigzag planar with the through holes or non-through-hole or a planar shape curved shape;

[0079] 所述衬底所占空间尺寸为1mm毫米X 1mm毫米X0. 1mm毫米到10m米X 10m 米X 10m米。 [0079] The substrate footprint size of 1mm 1mm mm mm X-X0. 10m to 1mm mm m m X-X-10m 10m meters.

[0080]当所述待微纳加工的衬底为多个时,单次采用所述微纳加工方法对一个所述待微纳加工的衬底进行微纳加工;或者,单次同时对多个所述待微纳加工的衬底进行微纳加工。 [0080] When the substrate is to be micro-nanofabrication plurality, a single micro nanofabrication method of the said substrate to be a micro-nanofabrication finely nanofabrication; or simultaneously on multiple single the substrate to be a micro-nanofabrication of micro and nanofabrication.

[0081] 如图3所示,为在各种衬底上制作微纳结构示意图;其中,15为平面衬底,16为加工成型的微纳结构;17为规则曲面衬底,18为在该衬底上加工成型的微纳结构;19为不规则曲面衬底,20为在该衬底上加工成形的微纳结构。 [0081] As shown in FIG. 3, a schematic diagram for the production of micro- and nanostructures on a variety of substrates; wherein the planar substrate 15, 16 is a micro-nano structures tooled; ruled surface of the substrate 17, 18 is in the tooled substrate micro- and nanostructures; irregular surface of the substrate 19, 20 is a micro-nano structures on the substrate in the forming process.

[0082] 此外,执行步骤S101中依据所述待微纳加工的衬底的各项参数,并依据导体表面电场分布方式确定的电极板的结构至少包括一个,也可以为两个或多个,其具体为: [0082] Further, according to the step S101, the substrate to be micro nanofabrication of the parameters, and the electrode plate according to the determined electric field distribution conductor surface comprises at least one embodiment, it may be two or more, specific as follows:

[0083] 按照所述导体表面电场分布方式设置所述电极板表面上的微结构图形; [0083] microstructure pattern disposed on the surface of the electrode plate according to electric field distribution of the surface of the conductors;

[0084] 以圆形、方形、多边形,椭圆形,球形、椭球形、或各类不规则曲面中的任意一种形状或任意组合形状作为所述电极板的整体形状; [0084] In a circular, square, polygonal, elliptical, spherical, ellipsoid, or any one of various types of irregularly shaped surface or any combination of shapes as the overall shape of the electrode plate;

[0085] 以带通孔、通缝,孔或缝的轮廓作为所述电极板的闭合曲线; [0085] In the band-pass hole, through slits, holes or slits closed curve as the outline of the electrode plate;

[0086] 以导电材料;或者附有导电材料图形的绝缘材料;或者附有导电材料的半导体材料构成所述电极板; [0086] In a conductive material; or a pattern of conductive material with an insulating material; with a conductive material or a semiconductor material constituting the electrode plate;

[0087] 其中,所述电极板所占空间尺寸为1mm毫米X 1mm毫米X 0• 1mm毫米到10m 米X 10m米X 10m米。 [0087] wherein the dimension of the space occupied by the electrode plate X-1mm 1mm mm mm mm X 0 • 1mm X-10m to 10m m m m X-10m.

[0088] 也就是说,所述电极板可以为金属、ITO、石墨條等导电材料,也可为附有导电材料图形的石英、玻璃、塑料、氮化硅、碳化硅、陶瓷等绝缘材料,还可为附有导电材料的硅、锗、 砷化镓等半导体材料。 [0088] That is, the electrode plate may be a conductive material such as metal, ITO, graphite tape, etc., may also be a pattern of conductive material with quartz, glass, plastic, silicon nitride, silicon carbide, ceramic insulating material, It may also be a silicon, germanium, gallium arsenide semiconductor material with a conductive material.

[0089] 该电极极板整体形状可为圆形、方形、多边形,椭圆形,球形、椭球形、各种不规则曲面以及此类形状的各种组合。 [0089] The overall shape of the electrode pad may be circular, square, polygonal, elliptical, spherical, ellipsoidal, irregular surfaces, and various combinations of these various shapes.

[0090] 该电极极板可带通孔、通缝,孔或缝的轮廓为闭合曲线。 [0090] The electrode pad may be a band-pass hole, through slits, holes or slits of a closed curve profile.

[0091] 其电极板表面带有的微结构图形,图形的材料、形状、尺寸、周期或非周期等性质根据预期加工的结果获得,或进行设计。 Properties [0091] The microstructured surface with a pattern of the electrode plates which, graphic materials, shape, size, and other periodic or aperiodic in accordance with the intended processing result obtained, or design.

[0092] 如图4所示,为电极板结构示意图;图中12为电极板衬底,13为电极板表面结构, 14为电极板通孔;电极板衬底可为半导体、绝缘体、导体等各种材料,表面微结构为导体材料。 [0092] As shown in FIG 4, a schematic view of an electrode plate structure; FIG. 12 is a plate electrode substrate, the electrode plate 13 is a surface structure, a through hole 14 of the electrode plate; an electrode plate may be a semiconductor substrate, an insulator, conductor, etc. materials, surface microstructure of a conductive material. 电极板并非仅为示意图一种形式,根据具体设计需要,可有任意变化。 Schematic view of an electrode plate is not the only form, depending on the design needs, there may be arbitrarily changed.

[0093] 上述本发明公开的实施例中详细描述了微纳加工方法,对于本发明的方法可采用多种形式的设备实现,因此本发明还公开了一种微纳加工设备,下面给出具体的实施例进行详细说明。 [0093] The disclosed embodiments of the present invention is described in detail in the micro-nano fabrication methods, the method of the present invention can be implemented in various forms of apparatus, and therefore the present invention also discloses a micro-nano fabrication apparatus, particularly given below the embodiments described in detail.

[0094] 实施例二 [0094] Second Embodiment

[0095] 如图5所示,为本发明该实施例公开的一种微纳加工设备的结构示意图,主要包括:电极板1,衬底2,电化学溶液8,溶液槽9,搅拌装置10和电流源11。 [0095] FIG. 5, a schematic diagram of the micro-structure of a nanofabrication device according to the embodiment of the disclosed invention, including: an electrode plate 1, the substrate 2, the electrochemical solution 8, the solution tank 9, a stirring device 10 and a current source 11.

[0096] 该衬底2为待微纳加工的衬底。 [0096] The substrate 2 is a substrate to be a micro nanofabrication.

[0097] 所述电极板1依据待微纳加工的衬底2的各项参数,以及导体表面电场分布方式 The parameters of the substrate 2 [0097] The electrode plates 1 to be based on micro-nanofabrication, the conductor surface electric field distribution and mode

Figure CN102766892BD00101

确定结构; Structure determination;

[0098] 其中,各项参数包括所述衬底2的衬底形状、尺寸、导电性、预加工微纳结构指标和衬底表面各部分静电场的电场强度E,n为静电场的法向分量或径向分量,H为静电场的平均曲率半径。 [0098] wherein the parameters include the shape of the substrate 2 of the substrate, each portion of the electrostatic field strength E field size, conductivity, index prefabricated micro- and nanostructures and the substrate surface, the n-electrostatic field normal radial component or components, H is the average radius of curvature of the electrostatic field.

[0099] 所述溶液槽9用于承载依据所述电极板1的结构和所述衬底2的预加工微纳结构指标,确定预设加工微纳结构的方式对应的配置比例的电化学溶液8,以及部分或全部设置于所述电化学溶液8中的所述电极板1和衬底2 ; [0099] The solution according to the slot 9 for carrying an electrode plate structure of the pre-processed substrate and the index 2 of the micro-nano structures, determined allocation ratio preset electrochemical solution processed in a way corresponding to micro- and nanostructures 8, and a portion or all of the electrode plate disposed within the electrochemical solution and a substrate 8 1 2;

[0100] 所述电流源11的阳极或阴极依据预设加工微纳结构的方式将所述电极板1和衬底2分别连接。 The anode or cathode under [0100] The current source 11 in a predetermined processing manner micro- and nanostructures of the electrode 2 are connected to the plate 1 and the substrate.

[0101] 探入所述溶液槽9内的搅拌装置10,所述搅拌装置10探入所述电化学溶液8的部分为绝缘体,当所述电流源11上电时,所述搅拌装置10在预设时间内搅拌所述电化学溶液8,使所述电化学溶液8中的载流子在所述衬底2上运动,获得位于所述衬底2上符合所述预设加工微纳结构指标的微纳结构3。 [0101] The probe into the solution tank 9, a stirring device 10, the probe means 10 into the electrochemical solution insulator portion 8 of the stirring, when the power of the current source 11, the stirring means 10 the solution was stirred for 8 electrochemical within the preset time, the solution in the electrochemical carriers 8 on a movement of the substrate 2, the substrate obtained is located in line with said predetermined processing on the two micro-nano structures micro- and nanostructures indicators 3.

[0102] 上述各个部件或装置中的具体执行过程,以及各个执行部件之间的限定可参见上述对应的方法实施例。 Example [0102] The various components of the implementation process or apparatus, and defined between the respective execution unit may refer to the corresponding methods described above. 这里不再赘述。 Not repeat them here.

[0103] 上述本发明所公开的微纳加工设备,其通过控制待微纳加工的衬底表面静电场分布来控制电化学溶液中的反应离子,或者载流子向衬底各部位运动的速率,从而控制各个衬底相应位置处按照预设加工微纳结构的方式的速率,最终在该衬底上制备出具有一定面形分布的微纳结构。 [0103] Micro nanofabrication apparatus of the present invention is disclosed, which controls the ion electrochemical reaction solution by controlling the surface of the electrostatic field distribution of the substrate to be micro nanofabrication or carrier movement speed to each part of the substrate , thereby controlling the position of each substrate at a rate corresponding to a preset processing mode of the micro-nano structures, micro and nano structures finally prepared surface shape having a certain distribution on the substrate. 从而实现利用静电场操控三维及曲面衬底微纳结构低成本、高效率、高清度成形的目的。 Thereby achieving a three-dimensional object using an electrostatic field manipulation and the substrate surface micro-nano structure at low cost, high efficiency, high definition of the forming.

[0104] 实施例三 [0104] Example three

[0105] 基于上述实施例一中公开的微纳加工方法和实施例二中公开的微纳加工设备。 [0105] Based on the disclosed micro nanofabrication method of the above-described first embodiment disclosed in Example II and the micro-and nanofabrication device. 由于所要加工的微纳结构材料种类很多,本实施例给出一具体实例。 Since many types to be processed in the micro-nano structure material, the present embodiment gives a specific example. 在本实施例仅以在平面金衬底上沉积铜微纳结构图形为例,另外需要说明的是,其它材料微纳结构的制作,通过更换电化学溶液和电极板,按以下具体操作方式,同样可以实现。 In the present embodiment copper is deposited only micro- and nanostructures on a planar gold substrate pattern, for example, further be noted that the production of micro- and nanostructures of other materials, electrochemical solution and by replacing the electrode plates, the following specific mode of operation, The same can be achieved.

[0106] 本发明该实施例的所基于的微纳加工如图5所示,其中,要制备的微纳结构3为沉积铜微纳结构,电化学溶液8为镀铜液,电极板1,衬底2,溶液槽9,搅拌装置10和电流源11〇 [0106] As shown in this embodiment of the present invention is based micro nanofabrication 5, wherein the micro-nano structures to be prepared for the deposition of copper 3 micro-nano structures, electrochemical solution of 8 copper plating solution, the electrode plate 1, the substrate 2, the solution tank 9, a stirring device 10 and the current source 11〇

[0107] 本发明该实施例的操作流程如图6所示,主要包括以下步骤: [0107] operational flow of this embodiment of the present invention is shown in Figure 6, includes the following steps:

[0108] 步骤S201,用表面附有圆环结构的铜板作为电极板1,其中,铜板厚1mm毫米,直径10mm毫米,圆环外直径400 ym微米,内直径300 ym微米,圆环中心,位于铜板边缘2mm 毫米处,圆环突出铜板表面0. 3mm毫米。 [0108] step S201, the surface with a copper plate with a circular ring structure 1 as an electrode plate, wherein a thickness of 1mm copper mm mm diameter of 10mm, an outer diameter of 400 ym microns ring, an inner diameter of 300 ym m, center of the ring, is located 2mm mm copper plate edge, the surface of the copper plate projecting annular 0. 3mm mm.

[0109] 步骤S202,依据步骤S201中的铜板作为电极板1,这里以沉积铜微纳结构3为例, 由此执行步骤S202配制镀铜液的电化学溶液8。 [0109] Step S202, in step S201 according to a copper plate as the electrode plate 1, where to deposit copper micro- and nanostructures Example 3, step S202 thereby performing an electrochemical copper plating solution was prepared 8.

[0110] 步骤S203,将电极板1接电流源11正极,衬底2接电流源11的负极,并将电极板1和衬底2同时置于镀铜液8中。 [0110] step S203, the electrode plate current source 11 connected to the positive electrode 1, negative electrode substrate 2 is connected to a current source 11, and the electrode plate 2 and the substrate 1 while the copper plating solution was placed 8.

[0111] 步骤S204,调整电极板1与衬底性2处于平行正对位置。 [0111] step S204, the adjustment of the electrode plate 1 and the substrate 2 facing in a parallel position. 其中,使两者相距0. 2mm 毫米。 Wherein the two millimeters apart 0. 2mm.

[0112] 步骤S205,上电,通电加工lOmin分钟。 [0112] step S205, the power, processing power lOmin minutes. 其中,所述电流源的电流随所述预设时间的变化为〇~lmin内电流3A,l~2min内电流2A,2~10min内电流1A。 Wherein the current source current with the preset time variation of the current square ~ lmin 3A, l ~ 2min inner current 2A, 2 ~ 10min the current 1A. 该变化可具体通过通电加工程序实现。 The power variation may be embodied by a machining program.

[0113] 步骤S206,在通电过程中,搅拌电化学溶液,使得载流子分布尽可能均匀,通电程序结束,断电取出附有微纳结构的衬底。 [0113] step S206, the energizing process, electrochemical solution was stirred, so that the carrier distribution as uniform as possible, the end of the power-on sequence, taken off the substrate with micro and nano structures.

[0114] 综上所述: [0114] In summary:

[0115] 通过上述本发明各个实施例公开的微纳加工方法和设备,通过采用控制静电场分布的电化学加工方法,可在任意面形的衬底上获得任意二维或三维微纳尺度图形。 [0115] by a micro nanofabrication methods and apparatus of the various embodiments disclosed embodiment of the present invention, by using electrochemical machining method for controlling the electrostatic field distribution can be obtained at any two or three dimensional micro-nano scale pattern on an arbitrary surface shape of the substrate . 同时,采用并非传统的金属平板,而是表面具有图形的电极板;以及在实现微纳结构加工的过程中无掩膜制作;以及在衬底上无需事先制备光刻胶或其他聚合物图形模板。 At the same time, not using the conventional metal plate, but the plate surface having an electrode pattern; and a mask-making process to achieve the micro-nano structure processing; and without prior preparation or other polymer photoresist pattern on a substrate template . 最后通过控制静电场分布来控制电流密度分布,进而控制不同区域金属沉积或刻蚀速度,最终获得预期的任意形貌微结构,从原理上完全不同于目前较流行的光刻技术与各种复制印刷技术,其分辨率不受衍射极限和模具尺寸的限制,能够解决了3D微纳结构难以加工的难题,同时解决了目前难以在曲面衬底上制备微纳图形的问题。 Finally, to control the current density distribution by controlling the electrostatic field distribution, different areas can be further metal deposition or etch rate, any morphology finally obtained the desired microstructure, the principle is completely different from currently more popular with various photolithographic techniques replication printing technology, which is not diffraction-limited resolution and limit the size of the mold, it is possible to solve the 3D micro- and nanostructures difficult processing problems, but the problem is difficult to solve the preparation of micro-nano pattern on the surface of the substrate.

[0116] 另外,本发明该实施例公开的方法其加工效率较高,无需复杂设备,成本也较低, 进一步的实现利用静电场操控三维及曲面衬底微纳结构低成本、高效率、高清度成形的目的。 [0116] Further, the method of this embodiment of the present invention is disclosed a high processing efficiency, without complex equipment, lower cost, to achieve further manipulated using electrostatic field and a three-dimensional surface of the substrate micro-nano structure at low cost, high efficiency, high definition of the shaped object.

[0117] 本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。 [0117] In the present specification, the various embodiments described in a progressive manner, differences from the embodiment and the other embodiments each of which emphasizes embodiment, the same or similar portions between the various embodiments refer to each other. 对于实施例公开的装置而言,由于其与实施例公开的方法相对应,所以描述的比较简单,相关之处参见方法部分说明即可。 For the disclosed embodiment of the apparatus embodiment, since it corresponds to the method disclosed embodiments, the description is relatively simple, see Methods of the correlation can be described.

[0118] 对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。 [0118] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. 对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。 Various modifications to these professionals skilled in the art of the present embodiments will be apparent, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. 因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。 Accordingly, the present invention will not be limited to the embodiments shown herein but is to be accorded herein consistent with the principles and novel features disclosed widest scope.

Claims (10)

1. 一种微纳加工方法,其特征在于,包括: 获取待微纳加工的衬底的各项参数,并依据导体表面电场分布方式_ 1. A micro-nano fabrication method, comprising: acquiring parameters to be micro nanofabrication substrate, and the conductor surface field according to a distributed fashion _
Figure CN102766892BC00021
,确定电极板的结构; 其中,各项参数包括所述衬底的衬底形状、尺寸、导电性、预加工微纳结构指标和衬底表面各位置处静电场的电场强度E,n为静电场的法向分量或径向分量,H为电极板各位置处的平均曲率半径; 依据所述电极板的结构和所述衬底的预加工微纳结构指标,确定预设加工微纳结构的方式对应的电化学溶液的配置比例,并获取所述电化学溶液; 依据预设加工微纳结构的方式将所述电极板和衬底分别连接电流源的阳极或阴极,并将所述电极板和衬底的部分或全部依据相对方式放置于所述电化学溶液中; 上电,在预设时间内搅拌所述电化学溶液,使所述电化学溶液中的载流子向所述衬底上运动,获得位于所述衬底上符合所述预设加工微纳结构指标的微纳结构。 Determining the structure of the electrode plate; wherein the parameter comprises a substrate shape of the substrate, the electric field strength E at the position of each of the electrostatic field size, conductivity, index prefabricated micro- and nanostructures and the substrate surface, electrostatic n- field of the normal component or radial component, H is the average radius of curvature at each position of the electrode plates; depending on the structure of the electrode plate and the pre-processed micro- and nanostructures index of the substrate, determining a predetermined processing structure of a micro-nano ratio corresponding manner arranged electrochemical solution, and acquiring the electrochemical solution; based on a preset mode processing micro-nano structure is connected to each of the electrode plate and the substrate of the anode or cathode current source, and the electrode plate and all or part of the substrate placed in a relative manner based on the electrochemical solution; power, electrochemical solution was stirred at the preset time, the carriers of the electrochemical solution to the substrate movement, conforms to the predetermined processing obtained micro- and nanostructures index micro- and nanostructures located on a substrate.
2. 根据权利要求1所述的方法,其特征在于,所述预设加工微纳结构的方式包括电镀沉积或电解刻蚀; 当所述预设加工微纳结构的方式为电镀沉积时,所述电极板与所述电流源的阳极连接,所述衬底与所述电流源的阴极连接; 当所述预设加工微纳结构的方式为电解刻蚀时,所述电极板与所述电流源的阴极连接,所述衬底与所述电流源的阳极连接。 2. The method according to claim 1, wherein the preset mode processing micro-nano structures comprises depositing a plating or electrolytic etching; when the preset mode processing micro-nano structure is electrodeposited, the the anode electrode connected to said plate and said current source, and a cathode connected to said substrate and said current source; when the preset mode processing micro-nano structures for the electrolytic etching of the electrode plate and the current source connected to the cathode, and an anode connected to said substrate and said current source.
3. 根据权利要求1所述的方法,其特征在于,所述预设加工微纳结构的方式包括电镀沉积或电解刻蚀; 所述电化学溶液中的阳离子与对应电镀沉积或电解刻蚀的所述衬底的材料为同一种元素。 3. The method according to claim 1, wherein the preset mode processing micro-nano structures comprises depositing a plating or electrolytic etching; the electrochemical solution corresponding to cations of electroless deposition or electrolytic etching material of the substrate is the same element.
4. 根据权利要求1所述的方法,其特征在于,包括:在所述电化学溶液中相对平行正对放置、倾斜放置、垂直放置或偏移放置所述电极板与所述衬底; 所述电极板与所述衬底的距离范围为〇〜〇. 2mm。 4. The method according to claim 1, characterized in that, comprising: opposed parallel facing said electrochemical solution is placed, tilted, or vertically offset placement of the electrode plate and the substrate; the said electrode plate is a distance range of the substrate 〇~〇. 2mm.
5. 根据权利要求1所述的方法,其特征在于,依据所述待微纳加工的衬底的各项参数, 并依据导体表面电场分布方式确定的电极板的结构具体为: 按照所述导体表面电场分布方式设置所述电极板表面上的微结构图形; 以圆形、方形、多边形,椭圆形,球形、椭球形、或各类不规则曲面中的任意一种形状或任意组合形状作为所述电极板的整体形状; 以带通孔、通缝,孔或缝的轮廓作为所述电极板的闭合曲线; 以导电材料;或者附有导电材料图形的绝缘材料;或者附有导电材料的半导体材料构成所述电极板; 其中,所述电极板所占空间尺寸为1_X1_X0. 1mm到10_X10_X10mm;所述电极板至少包括一个。 5. The method according to claim 1, characterized in that, according to the parameters of the substrate to be a micro nanofabrication and depending on the structure of the electrode plate conductor surface electric field distribution in a manner determined specifically as follows: according to the conductor microstructure pattern on the surface of the surface electric field distribution of the electrode plate disposed; circular, square, polygonal, elliptical, spherical, ellipsoidal, or all kinds of irregular surface shape of any one or any combination of shapes as the the overall shape of said electrode plate; bandpass hole, the through slits, holes or slits closed curve as the outline of the electrode plate; with a conductive material; with an insulating material or a conductive material pattern; with a conductive material or a semiconductor the material constituting the electrode plate; wherein the dimensions of the space occupied by the electrode plate 1_X1_X0 1mm to 10_X10_X10mm;. the electrode plate includes at least one.
6. 根据权利要求1所述的方法,其特征在于,所述衬底由硅、锗、砷化镓、ITO、石墨烯、 金属、塑料、PMMA、PDMS,碳化硅、氮化硅或陶瓷材料构成; 所述衬底的形状包括:圆盘状、直边轮廓平板、曲线轮廓平板、椭球形、球形、抛物面状、 双曲面状、马鞍面状、圆柱面状、指数面状,三角函数面状、锯齿面状、带通孔或无通孔的平面形状或曲面形状; 所述衬底所占空间尺寸为1謹XI謹X0. 1謹到10mmX10mmX10mm〇 6. The method according to claim 1, wherein said substrate is silicon, germanium, gallium arsenide, ITO, graphene, metals, plastics, PMMA, PDMS, silicon carbide, silicon nitride, or a ceramic material configuration; shape of the substrate comprising: a disk-shaped, flat straight edge profile, curvilinear profile flat, ellipsoidal, spherical, paraboloid, hyperboloid shaped, saddle-shaped surface, a cylindrical surface shape, planar index, surface trigonometric shape, a planar shape or a planar zigzag curved shape with a through hole or non-through-hole; size of the space occupied by the substrate 1 1 X0 wish XI wish to honor 10mmX10mmX10mm〇.
7. 根据权利要求1所述的方法,其特征在于,所述电流源的电流范围包括:0mA到1000A; 所述预设时间包括:〇〜99999秒; 其中,在所述预设时间内,所述电流源的电流随所述预设时间按直线、梳妆函数、周期门函数、三角函数、锯齿波函数或指数函数的波形变化。 7. The method according to claim 1, characterized in that the current range of the current source comprising: 0mA to 1000A; the predetermined time comprises: 〇~99999 seconds; wherein within the preset time, current of the current source waveform change with time according to said predetermined straight line, dressing function, door cycle function, trigonometric, exponential function or a sawtooth function.
8. 根据权利要求1所述的方法,其特征在于,搅拌所述电化学溶液时的搅拌幅度低于所述电化学溶液的液面高度。 8. The method according to claim 1, wherein, when the magnitude of stirring of the electrochemical solution was stirred below the liquid level of electrochemical solution.
9. 根据权利要求1所述的方法,其特征在于,当所述待微纳加工的衬底为多个时,单次采用所述微纳加工方法对一个所述待微纳加工的衬底进行微纳加工;或者,单次同时对多个所述待微纳加工的衬底进行微纳加工。 9. The method according to claim 1, wherein, when said substrate is to be micro-nanofabrication plurality, the use of a single micro-nanofabrication method of the substrate to be a micro-nanofabrication of micro nanofabrication; Alternatively, a single substrate simultaneously be a plurality of micro nanofabrication of the micro and nanofabrication.
10. -种微纳加工设备,其特征在于,包括: 待微纳加工的衬底; 电极板,所述电极板依据待微纳加工的衬底的各项参数,以及导体表面电场分布方式 10. - Microsatellite nanofabrication apparatus comprising: a substrate to be a micro-nanofabrication; electrode plate of the electrode plate to be based on the parameters of the micro-nanofabrication of the substrate, and the conductor surface field distribution mode
Figure CN102766892BC00031
确定结构; 其中,各项参数包括所述衬底的衬底形状、尺寸、导电性、预加工微纳结构指标和衬底表面各部分静电场的电场强度E,n为静电场的法向分量或径向分量,H为电极板个位置处的平均曲率半径; 溶液槽,所述溶液槽用于承载依据所述电极板的结构和所述衬底的预加工微纳结构指标,确定预设加工微纳结构的方式对应的配置比例的电化学溶液,以及部分或全部设置于所述电化学溶液中的所述电极板和衬底; 电流源,所述电流源的阳极或阴极依据预设加工微纳结构的方式将所述电极板和衬底分别连接; 探入所述溶液槽内的搅拌装置,所述搅拌装置探入所述电化学溶液的部分为绝缘体, 当所述电流源上电时,所述搅拌装置在预设时间内搅拌所述电化学溶液,使所述电化学溶液中的载流子在所述衬底上运动,获得位于所述衬底上符合所述预设 Determining structure; wherein the parameter comprises a substrate shape of the substrate, each portion of the electrostatic field strength E field size, conductivity, index prefabricated micro- and nanostructures and the substrate surface, the n-electrostatic field component normal or radial component, H is the mean radius of curvature at a position of the electrode plate; solution tank, the solution for carrying tank structure according to the pre-processed electrode plate and the micro- and nanostructures index of the substrate, determining a preset allocation ratio of micro- and nanostructures processing mode corresponding to the electrochemical solution, and disposed on part or all of the electrochemical solution in the electrode plate and the substrate; a current source, the anode or cathode of the current source according to a preset mode processing micro-nano structure of the electrode plate and the substrate are connected; probe solution into the stirring tank means, said probe means into said electrochemical stirring solution insulator portion, when the current source when power, said stirring means of said electrochemical solution was stirred for a preset time, the carriers of the electrochemical solution is in motion on the substrate to obtain the substrate positioned in line with the preset 工微纳结构指标的微纳结构。 Micro- and nanostructures workers micro- and nanostructures indicators.
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