CN102738149B

CN102738149B - A kind of BiCMOS integrated device based on plane strain SiGe HBT device and preparation method

Info

Publication number: CN102738149B
Application number: CN201210243169.0A
Authority: CN
Inventors: 胡辉勇; 张鹤鸣; 宋建军; 王海栋; 舒斌; 宣荣喜; 戴显英; 郝跃
Original assignee: Xidian University
Current assignee: Xidian University
Priority date: 2012-07-16
Filing date: 2012-07-16
Publication date: 2015-09-30
Anticipated expiration: 2032-07-16
Also published as: CN102738149A

Abstract

The invention discloses a kind of BiCMOS integrated device based on plane strain SiGe HBT device and preparation method, first SOI substrate is prepared, etching bipolar device active area, growth bipolar device collector region, region, photoetching base, at base region growing P-SiGe, i-Si, i-Poly-Si, preparation deep trench isolation, form emitter, base stage and collector electrode, form SiGe HBT device; Photoetching MOS active area, grows Si resilient coating, strained sige layer, intrinsic layer si layer continuously in this region, forms NMOS and PMOS device active area respectively, at NMOS and PMOS device active area deposit SiO ₂and polysilicon, by the pseudo-grid that etching preparation length is 22 ~ 350nm, self-registered technology is adopted to form light dope source and drain and the source and drain of NMOS and PMOS device, then pseudo-grid are removed, preparation forms gate medium lanthana and tungsten forms grid, finally metallize, photoetching goes between, and forms BiCMOS integrated device and circuit.Present invention employs lightly-doped source drain structure, restrained effectively the impact of hot carrier on device performance, improve the reliability of device.

Description

A kind of BiCMOS integrated device based on plane strain SiGe HBT device and preparation method

Technical field

The invention belongs to semiconductor integrated circuit technical field, particularly relate to a kind of BiCMOS integrated device based on plane strain SiGeHBT device and preparation method.

Background technology

Semiconductor integrated circuit technology is the core technology of high-tech and information industry, become the important symbol of measurement national science technical merit, overall national strength and a defense force, the key of to take integrated circuit as the microelectric technique of representative be then semiconductor technology.Semiconductor industry is the infrastructural industries of country, and why it develops so fast, and except technology itself is to except the tremendous contribution of economic development, also application is relevant widely with it.

One of Intel (Intel) founder Gordon mole (a Gordon Moore) proposed " Moore's Law " in nineteen sixty-five, and this theorem is pointed out: the transistor size in integrated circuit (IC) chip, and within about every 18 months, increase by 1 times, performance also promotes 1 times.For many years, world semiconductor industry follows this law all the time and constantly advances, and especially Si base integrated circuit technique, is developed so far, and whole world number, with the equipment of trillion dollars and Technical investment, has made Si base technique define very powerful industry ability.The global information summit that on February 23rd, 2004, Intel CEO Ke Laigebeiruite held in Tokyo represents, Moore's Law will be still effective at following 15 to 20 years, but the technology dynamics that promotion Moore's Law moves on is: the characteristic size constantly reducing chip.At present, external 45nm technology has entered the large-scale production stage, and 32nm technical office is in the introduction period, and according to ITRS ITRS, next node is 22nm.

But, along with the continuation of integrated circuit technique develops, the characteristic size of chip constantly reduces, in the microminiaturized process of Si chip fabrication industry, be faced with Material Physics attribute, manufacturing process technology, the challenge of the aspect limit such as device architecture.Such as when characteristic size is less than below 100nm due to the problem such as tunneling leakage and reliability, traditional gate dielectric material SiO ₂the requirement of low-power consumption cannot be met; The short-channel effect of nano-device and narrow-channel effect are obvious all the more, have had a strong impact on device performance; Traditional photoetching technique cannot meet the lithographic accuracy day by day reduced.Therefore traditional Si base process devices is more and more difficult to the needs meeting design.

Further develop needs, a large amount of researchers conducting in-depth research in new construction, new material and new technology in order to what meet semiconductor technology, and have made great progress in the application in some field.These new constructions and new material are greatly improved to device performance, can meet integrated circuit technique and continue to meet the needs that " mole theorem " develop rapidly.

Therefore; current industrial quarters is when manufacture large scale integrated circuit especially hybrid digital-analog integrated circuit; still Si BiCMOS or SiGe BiCMOS technology (Si BiCMOS is Si bipolar transistor BJT+Si CMOS, and SiGe BiCMOS is SiGe heterojunction bipolar transistor HBT+Si CMOS) is adopted.

Summary of the invention

The object of the invention is to utilize on a SOI substrate sheet, prepare strain SiGe planar channeling PMOS device, strain SiGe planar channeling nmos device and two polycrystal SiGe HBT device, form the BiCMOS integrated device based on plane strain SiGe HBT device and circuit, to realize the optimization of device and performance of integrated circuits.

The object of the present invention is to provide a kind of BiCMOS integrated device based on plane strain SiGe HBT device, described BiCMOS integrated device adopts two polycrystal SiGe HBT device, strain SiGe planar channeling nmos device and strain SiGe planar channeling PMOS device.

Further, nmos device conducting channel is strain SiGe material, is tensile strain along channel direction.

Further, PMOS device conducting channel is strain SiGe material, is compressive strain along channel direction.

Further, PMOS device adopts quantum well structure.

Further, the emitter of SiGe HBT device and base stage adopt polysilicon contact.

Further, the base of SiGe HBT device is strain SiGe material.

Another object of the present invention is to the preparation method that a kind of BiCMOS integrated device based on plane strain SiGe HBT device is provided, comprise the steps:

The first step, choose two panels N-type doping Si sheet, wherein two panels doping content is 1 ~ 5 × 10 ¹⁵cm ^-3, be oxidized two panels Si sheet surface, oxidated layer thickness is 0.5 ~ 1 μm; Using the basis material of a slice wherein as upper strata, and in this basis material hydrogen injecting, using the basis material of another sheet as lower floor; Chemico-mechanical polishing (CMP) technique is adopted to carry out polishing to two oxide layer surfaces;

Second step, two panels Si sheet oxide layer is placed in ultra-high vacuum environment relatively at the temperature of 350 ~ 480 DEG C and realizes bonding; Si sheet temperature after bonding is raised 100 ~ 200 DEG C, make the hydrogen place fracture that upper strata basis material is injecting, the part unnecessary to upper strata basis material is peeled off, and retains the Si material of 100 ~ 200nm, and carry out chemico-mechanical polishing (CMP) at its break surface, form SOI substrate;

3rd step, photoetching bipolar device active area, go out at this region dry etching the deep trouth that the degree of depth is 2 ~ 3 μm; Utilize the method for chemical vapor deposition (CVD), at 600 ~ 750 DEG C, grow Si epitaxial loayer on the area, thickness is 2 ~ 3 μm, and N-type is adulterated, and doping content is 1 × 10 ¹⁶~ 1 × 10 ¹⁷cm ^-3, as collector region;

4th step, utilizing the method for chemical vapor deposition (CVD), at 600 ~ 800 DEG C, is the SiO of 200 ~ 300nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 100 ~ 200nm; Photoetching base, utilizes dry etching, etches the region, base that the degree of depth is 200nm, and at substrate surface growth trilaminate material: ground floor is SiGe layer, and Ge component is 15 ~ 25%, thickness is the doping of 20 ~ 60nm, P type, and doping content is 5 × 10 ¹⁸~ 5 × 10 ¹⁹cm ^-3, as base; The second layer is unadulterated intrinsic layer si layer, and thickness is 10 ~ 20nm; Third layer is unadulterated intrinsic Poly-Si layer, and thickness is 200 ~ 300nm, as base stage and emitter region;

5th step, utilizing the method for chemical vapor deposition (CVD), at 600 ~ 800 DEG C, is the SiO of 200 ~ 300nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 100 ~ 200nm; Deep trench isolation region between lithographic device, goes out at deep trench isolation region dry etching the deep trouth that the degree of depth is 5 μm, utilizes chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, in deep trouth, fills SiO ₂;

6th step, with wet etching fall surface SiO ₂and SiN layer, the method for recycling chemical vapor deposition (CVD), at 600 ~ 800 DEG C, is the SiO of 200 ~ 300nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 100 ~ 200nm; Photoetching collector region shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 180 ~ 300nm, utilizes chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, in shallow slot, fills SiO ₂;

7th step, with wet etching fall surface SiO ₂and SiN layer, the method for recycling chemical vapor deposition (CVD), at 600 ~ 800 DEG C, is the SiO of 200 ~ 300nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 100 ~ 200nm; Photoetching base shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 215 ~ 325nm, utilizes chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, in shallow slot, fills SiO ₂;

8th step, with wet etching fall surface SiO ₂and SiN layer, utilizing the method for chemical vapor deposition (CVD), at 600 ~ 800 DEG C, is the SiO of 300 ~ 500nm in substrate surface deposit a layer thickness ₂layer; Photoetching base region, carries out p type impurity injection to this region, makes base contact regions doping content be 1 × 10 ¹⁹~ 1 × 10 ²⁰cm ^-3, form base contact area;

9th step, photoetching emitting area, carry out N-type impurity injection to this region, makes doping content be 1 × 10 ¹⁷~ 5 × 10 ¹⁷cm ^-3, form emitter region;

Tenth step, photoetching collector region, and utilize the method for chemico-mechanical polishing (CMP), remove intrinsic layer si layer and the intrinsic Poly-Si layer of collector region, N-type impurity injection is carried out to this region, makes collector contact district doping content be 1 × 10 ¹⁹~ 1 × 10 ²⁰cm ^-3, form collector contact area; And to substrate at 950 ~ 1100 DEG C of temperature, annealing 15 ~ 120s, carries out impurity activation, forms SiGe HBT device;

11 step, photoetching MOS active area, utilize dry etch process, the shallow slot that the degree of depth is 300 ~ 400nm is etched in MOS active area, utilize chemical vapor deposition (CVD) method, at 600 ~ 750 DEG C, trilaminate material is grown continuously: the N-type Si resilient coating of ground floor to be thickness be 280 ~ 380nm, this layer of doping content is 1 ~ 5 × 10 in this shallow slot ¹⁵cm ^-3; The N-type SiGe epitaxial loayer of the second layer to be thickness be 10 ~ 15nm, this layer of Ge component is 15 ~ 30%, and doping content is 1 ~ 5 × 10 ¹⁶cm ^-3; The intrinsic relaxation Si layer of third layer to be thickness be 3 ~ 5nm;

12 step, utilizing chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, is the SiO of 300 ~ 500nm in extension material surface deposit a layer thickness ₂layer; Photoetching PMOS device active area, carries out N-type ion implantation to PMOS device active area, makes its doping content reach 1 ~ 5 × 10 ¹⁷cm ^-3; Photoetching nmos device active area, utilizes ion implantation technology to carry out P type ion implantation to nmos device region, and form nmos device active area P trap, P trap doping content is 1 ~ 5 × 10 ¹⁷cm ^-3;

13 step, utilize wet etching, etch away the SiO on surface ₂layer, utilize chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, the intrinsic Poly-Si layer of to be the SiN layer of 3 ~ 5nm in substrate surface deposit a layer thickness as gate medium and a layer thickness be 300 ~ 500nm, photoetching Poly-Si grid and gate medium, form the pseudo-grid that 22 ~ 350nm is long;

14 step, utilize ion implantation, carry out N-type and P type ion implantation respectively to nmos device active area and PMOS device active area, form N-type lightly-doped source drain structure (N-LDD) and P type lightly-doped source drain structure (P-LDD), doping content is 1 ~ 5 × 10 ¹⁸cm ^-3;

15 step, utilizing chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, is the SiO of 5 ~ 15nm in substrate surface deposit a layer thickness ₂layer, utilizes dry etch process, etches away the SiO on surface ₂layer, retains the SiO of Poly-Si grid and gate medium side ₂, form side wall;

16 step, make PMOS device active area by lithography, utilize ion implantation technique autoregistration to form the source-drain area of PMOS device; Anti-carve out nmos device active area, utilize ion implantation technique autoregistration to form the source-drain area of nmos device; By substrate at 950 ~ 1100 DEG C of temperature, annealing 15 ~ 120s, carries out impurity activation;

17 step, use chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, at substrate surface deposit one deck SiO ₂, thickness is 300 ~ 500nm, utilizes chemico-mechanical polishing (CMP) technology, by SiO ₂be planarized to gate surface;

18 step, utilize wet etching to be removed completely by dummy grid, leave the autoregistration impression that grid in oxide layer are stacking, grow at substrate surface the lanthana La that a layer thickness is 2 ~ 5nm ₂o ₃; At substrate surface sputtering layer of metal tungsten (W), finally utilize chemico-mechanical polishing (CMP) technology by the tungsten (W) beyond area of grid and lanthana (La ₂o ₃) removing;

19 step, utilize chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, superficial growth one deck SiO ₂layer, and lithography fair lead;

20 step, metallization, photoetching lead-in wire, form drain electrode, source electrode and grid and emitter, base stage, collector electrode metal lead-in wire, form the BiCMOS integrated device based on plane strain SiGe HBT device that MOS conducting channel is 22 ~ 350nm.

Further, in this preparation method based on chemical vapor deposition (CVD) technological temperature involved in the BiCMOS integrated device manufacture process of plane strain SiGe HBT device, maximum temperature is less than or equal to 800 DEG C.

Further, base thickness decides according to the epitaxy layer thickness of the 4th step SiGe, gets 20 ~ 60nm.

Another object of the present invention is to the preparation method that a kind of BiCMOS integrated circuit based on plane strain SiGe HBT device is provided, comprise the steps:

Step 1, implementation method prepared by SOI substrate material is:

(1a) choosing N-type doping content is 1 × 10 ¹⁵cm ^-3si sheet, be oxidized its surface, oxidated layer thickness is 1 μm, as the basis material on upper strata, and in this basis material hydrogen injecting;

(1b) choosing N-type doping content is 1 × 10 ¹⁵cm ^-3si sheet, be oxidized its surface, oxidated layer thickness is 1 μm, as the basis material of lower floor;

(1c) adopt chemico-mechanical polishing (CMP) technique, respectively polishing is carried out to the upper strata substrate material surface after lower floor and hydrogen injecting;

(1d) be close to relative with upper strata substrate material surface oxide layer for the lower floor after polishing, be placed in ultra-high vacuum environment and realize bonding at 350 DEG C of temperature;

(1e) substrate temperature after bonding is raised 200 DEG C, make the hydrogen place fracture that upper strata basis material is injecting, the part unnecessary to upper strata basis material is peeled off, and retains the Si material of 100nm, and carry out chemico-mechanical polishing (CMP) at this break surface, form soi structure;

Step 2, implementation method prepared by epitaxial material is:

(2a) photoetching bipolar device active area, goes out at this region dry etching the deep trouth that the degree of depth is 2 μm;

(2b) utilize the method for chemical vapor deposition (CVD), at 600 DEG C, grow the N-type epitaxial si layer that a layer thickness is 2 μm in this deep trouth, as collector region, this layer of doping content is 1 × 10 ¹⁶cm ^-3;

(2c) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiO of 200nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 100nm; (2a) utilize the method for chemical vapor deposition (CVD), at 600 DEG C, upper strata Si material grows the N-type epitaxial si layer that a layer thickness is 250nm, as collector region, this layer of doping content is 1 × 10 ¹⁶cm ^-3;

(2d) photoetching base, utilizes dry etching, etches the region, base that the degree of depth is 200nm;

(2e) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiGe layer of 20nm in Grown a layer thickness, and as base, this layer of Ge component is 15%, and doping content is 5 × 10 ¹⁸cm ^-3;

(2f) method of chemical vapor deposition (CVD) is utilized, at 600 DEG C, in the unadulterated intrinsic layer si layer of Grown a layer thickness 10nm;

(2g) method of chemical vapor deposition (CVD) is utilized, at 600 DEG C, at the unadulterated intrinsic Poly-Si layer of Grown a layer thickness 200nm;

Step 3, implementation method prepared by device deep trench isolation is:

(3a) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiO of 200nm in substrate surface deposit a layer thickness ₂layer;

(3b) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiN layer of 100nm in substrate surface deposit a layer thickness;

(3c) deep trench isolation region between lithographic device, goes out at deep trench isolation region dry etching the deep trouth that the degree of depth is 5 μm;

(3d) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in deep trouth, fill SiO ₂, form device deep trench isolation;

Step 4, implementation method prepared by collector electrode shallow-trench isolation is:

(4a) SiO on surface is fallen with wet etching ₂and SiN layer;

(4b) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiO of 200nm in substrate surface deposit a layer thickness ₂layer;

(4c) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiN layer of 100nm in substrate surface deposit a layer thickness;

(4d) photoetching collector electrode shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 180nm;

(4e) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in shallow slot, fill SiO ₂, form collector electrode shallow-trench isolation;

Step 5, implementation method prepared by base stage shallow-trench isolation is:

(5a) SiO on surface is fallen with wet etching ₂and SiN layer;

(5b) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiO of 200nm in substrate surface deposit a layer thickness ₂layer;

(5c) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiN layer of 100nm in substrate surface deposit a layer thickness;

(5d) photoetching base stage shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 215nm;

(5e) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in shallow slot, fill SiO ₂, form base stage shallow-trench isolation;

Step 6, the implementation method that SiGe HBT is formed is:

(6a) SiO on surface is fallen with wet etching ₂and SiN layer;

(6b) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiO of 300nm in substrate surface deposit a layer thickness ₂layer;

(6c) photoetching base region, carries out p type impurity injection to this region, makes contact zone doping content be 1 × 10 ¹⁹cm ^-3, form base stage;

(6d) photoetching emitter region, carries out N-type impurity injection to this region, makes doping content be 1 × 10 ¹⁷cm ^-3, form emitter region;

(6e) photoetching collector region, and utilize the method for chemico-mechanical polishing (CMP), remove intrinsic layer si layer and the intrinsic Poly-Si layer of collector region, N-type impurity injection is carried out to this region, makes collector contact district doping content be 1 × 10 ¹⁹cm ^-3, form collector electrode;

(6f) to substrate at 950 DEG C of temperature, annealing 120s, carries out impurity activation, forms SiGe HBT;

Step 7, the implementation method that MOS is prepared active area is:

(7a) photoetching MOS active area;

(7b) utilize dry etch process, etch in MOS active area the shallow slot that the degree of depth is 300nm;

(7c) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in shallow slot, growth thickness is the N-type Si resilient coating of 280nm, and this layer of doping content is 1 × 10 ¹⁵cm ^-3;

(7d) utilize chemical vapor deposition (CVD) method, at 600 DEG C, be the N-type SiGe epitaxial loayer of 10nm at substrate surface growth thickness, this layer of Ge component is 15%, and doping content is 1 × 10 ¹⁶cm ^-3;

(7e) utilizing chemical vapor deposition (CVD) method, at 600 DEG C, is the intrinsic relaxation type Si cap layers of 3nm at substrate surface growth thickness;

Step 8, the implementation method that nmos device and PMOS device are formed is:

(8a) chemical vapor deposition (CVD) method is utilized, at 600 DEG C, at the SiO of Grown one deck 300nm ₂;

(8b) photoetching PMOS device active area, carries out N-type ion implantation to PMOS device active area, makes its doping content reach 1 × 10 ¹⁷cm ^-3;

(8c) photoetching nmos device active area, utilizes ion implantation technology to carry out P type ion implantation to nmos device region, and form nmos device active area P trap, P trap doping content is 1 × 10 ¹⁷cm ^-3;

(8d) utilizing chemical vapor deposition (CVD) method, at 600 DEG C, is the SiN layer of 3nm in superficial growth a layer thickness;

(8e) utilize chemical vapor deposition (CVD) method, at 600 DEG C, SiN layer grows the polysilicon of one deck 300nm;

(8f) photoetching Poly-Si grid and gate medium, forms the pseudo-grid that 22nm is long;

(8g) photoetching nmos device active area, carries out N-type ion implantation to nmos device active area, and form N-type lightly-doped source drain structure (N-LDD), doping content is 1 × 10 ¹⁸cm ^-3;

(8h) photoetching PMOS device active area, carries out P type ion implantation to PMOS device active area, and form P type lightly-doped source drain structure (P-LDD), doping content is 1 × 10 ¹⁸cm ^-3;

(8i) at substrate surface, chemical vapor deposition (CVD) method is utilized, at 600 DEG C, growth one deck SiO ₂, thickness is 10nm, utilizes dry etch process photoetching to fall unnecessary SiO subsequently ₂, retain gate lateral wall SiO ₂, form side wall;

(8j) make PMOS device active area by lithography, utilize ion implantation technique autoregistration to form the source-drain area of PMOS device;

(8k) make nmos device active area by lithography, utilize ion implantation technique autoregistration to form the source-drain area of nmos device;

(8l) by substrate at 950 DEG C of temperature, annealing 120s, carry out impurity activation;

Step 9, implementation method prepared by MOS device grid is:

(9a) chemical vapor deposition (CVD) method is utilized, at 600 DEG C, at substrate surface deposit one deck SiO ₂layer, SiO ₂thickness is 300nm thickness;

(9b) utilize chemico-mechanical polishing (CMP) method, effects on surface carries out being planarized to gate level;

(9c) utilize wet etching to be removed completely by dummy grid, leave the autoregistration impression that grid in oxide layer are stacking;

(9d) grow at substrate surface the lanthana (La that a layer thickness is 2nm ₂o ₃);

(9e) at substrate surface sputtering layer of metal tungsten (W);

(9f) utilize chemico-mechanical polishing (CMP) technology by the tungsten (W) beyond area of grid and lanthana (La ₂o ₃) removing;

Step 10, the implementation method forming BiCMOS integrated circuit is:

(10a) chemical vapor deposition (CVD) method is utilized, at 600 DEG C, at superficial growth one deck SiO ₂layer;

(10b) lithography fair lead;

(10c) metallize;

(10d) photoetching lead-in wire, form the drain electrode of MOS device, source electrode and grid, and bipolar transistor emitter pole, base stage and collector electrode metal lead-in wire, form the BiCMOS integrated device based on plane strain SiGe HBT device and circuit that MOS conducting channel is 22nm.

tool of the present invention has the following advantages:

1. have employed light dope source and drain (LDD) structure in the BiCMOS device architecture based on plane strain SiGe HBT device that prepared by the present invention, restrained effectively the impact of hot carrier on device performance;

2. the BiCMOS of plane strain SiGe HBT device that prepared by the present invention have employed quantum well structure in PMOS device structure, can effectively hole be limited in SiGe layer, decrease interface scattering, improve the electric properties such as the frequency of device, current driving ability;

3. the BiCMOS device based on plane strain SiGe HBT device that prepared by the present invention have employed high-K gate dielectric, improves the grid-control ability of MOS device, enhances the electric property of device;

4. the maximum temperature related in the BiCMOS device process of the present invention's preparation based on plane strain SiGe HBT device is 800 DEG C, lower than the technological temperature causing strain SiGe channel stress relaxation, therefore this preparation method can keep strain SiGe channel stress effectively, improves the performance of integrated circuit;

5. in the BiCMOS based on plane strain SiGe HBT device that prepared by the present invention, metal gate mosaic technology (damascene process) is have employed when preparing nmos device and PMOS device gate electrode, tungsten (W) is employed as metal electrode in this technique, reduce the resistance of gate electrode, improve flexibility and the reliability of device layout;

6. have employed SOI substrate in the strain SiGe hollow raceway groove Si base BiCMOS integrated device that prepared by the present invention, reduce power consumption and the cut-in voltage of MOS device and circuit, improve the reliability of device and circuit.

Accompanying drawing explanation

Fig. 1 is provided by the invention based on the BiCMOS integrated device of plane strain SiGe HBT device and the realization flow figure of circuit preparation method.

Embodiment

In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.

Embodiments provide a kind of BiCMOS integrated device based on plane strain SiGe HBT device, described BiCMOS integrated device adopts two polycrystal SiGe HBT device, strain SiGe planar channeling nmos device and strain SiGe planar channeling PMOS device.

As a prioritization scheme of the embodiment of the present invention, nmos device conducting channel is strain SiGe material, is tensile strain along channel direction.

As a prioritization scheme of the embodiment of the present invention, PMOS device conducting channel is strain SiGe material, is compressive strain along channel direction.

As a prioritization scheme of the embodiment of the present invention, PMOS device adopts quantum well structure.

As a prioritization scheme of the embodiment of the present invention, the emitter of SiGe HBT device and base stage adopt polysilicon contact.

As a prioritization scheme of the embodiment of the present invention, the base of SiGe HBT device is strain SiGe material.

Referring to accompanying drawing 1, prepared by being described in further detail based on the BiCMOS integrated device of plane strain SiGeHBT device and the technological process of circuit of 22 ~ 350nm channel length to the present invention.

Embodiment 1: preparation channel length is the BiCMOS integrated device based on plane strain SiGe HBT device and the circuit of 22nm, and concrete steps are as follows:

Step 1, prepared by SOI substrate material.

(1d) be close to relative with upper strata substrate material surface oxide layer for the lower floor after polishing, be placed in ultra-high vacuum environment and realize bonding at 350 ° of C temperature;

(1e) substrate temperature after bonding is raised 200 DEG C, make the hydrogen place fracture that upper strata basis material is injecting, the part unnecessary to upper strata basis material is peeled off, and retains the Si material of 100nm, and carry out chemico-mechanical polishing (CMP) at this break surface, form soi structure.

Step 2, prepared by epitaxial material.

(2c) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiO of 200nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 100nm;

(2g) method of chemical vapor deposition (CVD) is utilized, at 600 DEG C, at the unadulterated intrinsic Poly-Si layer of Grown a layer thickness 200nm.

Step 3, prepared by device deep trench isolation.

(3d) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in deep trouth, fill SiO ₂, form device deep trench isolation.

Step 4, prepared by collector electrode shallow-trench isolation.

(4a) SiO on surface is fallen with wet etching ₂and SiN layer;

(4e) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in shallow slot, fill SiO ₂, form collector electrode shallow-trench isolation.

Step 5, prepared by base stage shallow-trench isolation.

(5a) SiO on surface is fallen with wet etching ₂and SiN layer;

(5e) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in shallow slot, fill SiO ₂, form base stage shallow-trench isolation.

Step 6, SiGe HBT is formed.

(6a) SiO on surface is fallen with wet etching ₂and SiN layer;

(6f) to substrate at 950 DEG C of temperature, annealing 120s, carries out impurity activation, forms SiGe HBT.

Step 7, prepared by MOS active area.

(7a) photoetching MOS active area;

(7e) utilizing chemical vapor deposition (CVD) method, at 600 DEG C, is the intrinsic relaxation type Si cap layers of 3nm at substrate surface growth thickness.

Step 8, nmos device and PMOS device are formed.

(8l) by substrate at 950 DEG C of temperature, annealing 120s, carry out impurity activation.

Step 9, prepared by MOS device grid.

(9e) at substrate surface sputtering layer of metal tungsten (W);

(9f) utilize chemico-mechanical polishing (CMP) technology by the tungsten (W) beyond area of grid and lanthana (La ₂o ₃) removing.

Step 10, forms BiCMOS integrated circuit.

(10b) lithography fair lead;

(10c) metallize;

Embodiment 2: preparation channel length is the BiCMOS integrated device based on plane strain SiGe HBT device and the circuit of 130nm, and concrete steps are as follows:

Step 1, prepared by SOI substrate material.

(1a) choosing N-type doping content is 3 × 10 ¹⁵cm ^-3si sheet, be oxidized its surface, oxidated layer thickness is 0.7 μm, as the basis material on upper strata, and in this basis material hydrogen injecting;

(1b) choosing N-type doping content is 3 × 10 ¹⁵cm ^-3si sheet, be oxidized its surface, oxidated layer thickness is 0.7 μm, as the basis material of lower floor;

(1d) be close to relative with upper strata substrate material surface oxide layer for the lower floor after polishing, be placed in ultra-high vacuum environment and realize bonding at 420 DEG C of temperature;

(1e) substrate temperature after bonding is raised 150 DEG C, make the hydrogen place fracture that upper strata basis material is injecting, the part unnecessary to upper strata basis material is peeled off, and retains the Si material of 150nm, and carry out chemico-mechanical polishing (CMP) at this break surface, form soi structure.

Step 2, prepared by epitaxial material.

(2a) photoetching bipolar device active area, goes out at this region dry etching the deep trouth that the degree of depth is 2.5 μm;

(2b) utilize the method for chemical vapor deposition (CVD), at 700 DEG C, grow the N-type epitaxial si layer that a layer thickness is 2.5 μm in this deep trouth, as collector region, this layer of doping content is 5 × 10 ¹⁶cm ^-3;

(2c) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiO of 240nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 150nm;

(2e) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiGe layer of 40nm in Grown a layer thickness, and as base, this layer of Ge component is 20%, and doping content is 1 × 10 ¹⁹cm ^-3;

(2f) method of chemical vapor deposition (CVD) is utilized, at 700 DEG C, in the unadulterated intrinsic layer si layer of Grown a layer thickness 15nm;

(2g) method of chemical vapor deposition (CVD) is utilized, at 700 DEG C, at the unadulterated intrinsic Poly-Si layer of Grown a layer thickness 240nm.

Step 3, prepared by device deep trench isolation.

(3a) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiO of 240nm in substrate surface deposit a layer thickness ₂layer;

(3b) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiN layer of 150nm in substrate surface deposit a layer thickness;

(3d) utilize chemical vapor deposition (CVD) method, at 700 DEG C, in shallow slot, fill SiO ₂, form device deep trench isolation.

Step 4, prepared by collector electrode shallow-trench isolation.

(4a) SiO on surface is fallen with wet etching ₂and SiN layer;

(4b) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiO of 240nm in substrate surface deposit a layer thickness ₂layer;

(4c) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiN layer of 150nm in substrate surface deposit a layer thickness;

(4d) photoetching collector electrode shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 240nm;

(4e) utilize chemical vapor deposition (CVD) method, at 700 DEG C, in shallow slot, fill SiO ₂, form collector electrode shallow-trench isolation.

Step 5, prepared by base stage shallow-trench isolation.

(5a) SiO on surface is fallen with wet etching ₂and SiN layer;

(5b) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiO of 240nm in substrate surface deposit a layer thickness ₂layer;

(5c) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiN layer of 150nm in substrate surface deposit a layer thickness;

(5d) photoetching base stage shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 260nm;

(5e) utilize chemical vapor deposition (CVD) method, at 700 DEG C, in shallow slot, fill SiO ₂, form base stage shallow-trench isolation.

Step 6, SiGe HBT is formed.

(6a) SiO on surface is fallen with wet etching ₂and SiN layer;

(6b) utilizing the method for chemical vapor deposition (CVD), at 700 DEG C, is the SiO of 400nm in substrate surface deposit a layer thickness ₂layer;

(6c) photoetching base region, carries out p type impurity injection to this region, makes contact zone doping content be 5 × 10 ¹⁹cm ^-3, form base stage;

(6d) photoetching emitter region, carries out N-type impurity injection to this region, makes doping content be 3 × 10 ¹⁷cm ^-3, form emitter region;

(6e) photoetching collector region, and utilize the method for chemico-mechanical polishing (CMP), remove intrinsic layer si layer and the intrinsic Poly-Si layer of collector region, N-type impurity injection is carried out to this region, makes collector contact district doping content be 5 × 10 ¹⁹cm ^-3, form collector electrode;

(6f) to substrate at 1000 DEG C of temperature, annealing 60s, carries out impurity activation, forms SiGe HBT.

Step 7, prepared by MOS active area.

(7a) photoetching MOS active area;

(7b) utilize dry etch process, etch in MOS active area the shallow slot that the degree of depth is 350nm;

(7c) utilize chemical vapor deposition (CVD) method, at 700 DEG C, in shallow slot, growth thickness is the N-type Si resilient coating of 330nm, and this layer of doping content is 3 × 10 ¹⁵cm ^-3;

(7d) utilize chemical vapor deposition (CVD) method, at 600 DEG C, be the N-type SiGe epitaxial loayer of 12nm at substrate surface growth thickness, this layer of Ge component is 20%, and doping content is 3 × 10 ¹⁶cm ^-3;

(7e) utilizing chemical vapor deposition (CVD) method, at 700 DEG C, is the intrinsic relaxation type Si cap layers of 4nm at substrate surface growth thickness.

Step 8, nmos device and PMOS device are formed.

(8a) chemical vapor deposition (CVD) method is utilized, at 700 DEG C, at the SiO of Grown one deck 400nm ₂;

(8b) photoetching PMOS device active area, carries out N-type ion implantation to PMOS device active area, makes its doping content reach 3 × 10 ¹⁷cm ^-3;

(8c) photoetching nmos device active area, utilizes ion implantation technology to carry out P type ion implantation to nmos device region, and form nmos device active area P trap, P trap doping content is 3 × 10 ¹⁷cm ^-3;

(8d) utilizing chemical vapor deposition (CVD) method, at 700 DEG C, is the SiN layer of 4nm in superficial growth a layer thickness;

(8e) utilize chemical vapor deposition (CVD) method, at 700 DEG C, SiN layer grows the polysilicon of one deck 400nm;

(8f) photoetching Poly-Si grid and gate medium, forms the pseudo-grid that 130nm is long;

(8g) photoetching nmos device active area, carries out N-type ion implantation to nmos device active area, and form N-type lightly-doped source drain structure (N-LDD), doping content is 3 × 10 ¹⁸cm ^-3;

(8h) photoetching PMOS device active area, carries out P type ion implantation to PMOS device active area, and form P type lightly-doped source drain structure (P-LDD), doping content is 3 × 10 ¹⁸cm ^-3;

(8i) at substrate surface, chemical vapor deposition (CVD) method is utilized, at 700 DEG C, growth one deck SiO ₂, thickness is 15nm, utilizes dry etch process photoetching to fall unnecessary SiO subsequently ₂, retain gate lateral wall SiO ₂, form side wall;

(8l) by substrate at 1000 DEG C of temperature, annealing 60s, carry out impurity activation.

Step 9, prepared by MOS device grid.

(9a) chemical vapor deposition (CVD) method is utilized, at 700 DEG C, at substrate surface deposit one deck SiO ₂layer, SiO ₂thickness is 400nm thickness;

(9d) grow at substrate surface the lanthana (La that a layer thickness is 4nm ₂o ₃);

(9e) at substrate surface sputtering layer of metal tungsten (W);

Step 10, forms BiCMOS integrated circuit.

(10a) chemical vapor deposition (CVD) method is utilized, at 700 DEG C, at superficial growth one deck SiO ₂layer;

(10b) lithography fair lead;

(10c) metallize;

(10d) photoetching lead-in wire, form the drain electrode of MOS device, source electrode and grid, and bipolar transistor emitter pole, base stage and collector electrode metal lead-in wire, form the BiCMOS integrated device based on plane strain SiGe HBT device and circuit that MOS conducting channel is 130nm.

Embodiment 3: preparation channel length is the BiCMOS integrated device based on plane strain SiGe HBT device and the circuit of 350nm, and concrete steps are as follows:

Step 1, prepared by SOI substrate material.

(1a) choosing N-type doping content is 5 × 10 ¹⁵cm ^-3si sheet, be oxidized its surface, oxidated layer thickness is 0.5 μm, as the basis material on upper strata, and in this basis material hydrogen injecting;

(1b) choosing N-type doping content is 5 × 10 ¹⁵cm ^-3si sheet, be oxidized its surface, oxidated layer thickness is 0.5 μm, as the basis material of lower floor;

(1c) adopt chemico-mechanical polishing (CMP) technique, respectively polishing is carried out to the upper strata active layer substrate material surface after lower floor and hydrogen injecting;

(1d) be close to relative with upper strata substrate material surface oxide layer for the lower floor after polishing, be placed in ultra-high vacuum environment and realize bonding at 480 DEG C of temperature;

(1e) substrate temperature after bonding is raised 100 DEG C, make the hydrogen place fracture that upper strata basis material is injecting, the part unnecessary to upper strata basis material is peeled off, and retains the Si material of 200nm, and carry out chemico-mechanical polishing (CMP) at this break surface, form soi structure.

Step 2, prepared by epitaxial material.

(2a) photoetching bipolar device active area, goes out at this region dry etching the deep trouth that the degree of depth is 3 μm;

(2b) utilize the method for chemical vapor deposition (CVD), at 750 DEG C, grow the N-type epitaxial si layer that a layer thickness is 3 μm in this deep trouth, as collector region, this layer of doping content is 1 × 10 ¹⁷cm ^-3;

(2c) utilizing the method for chemical vapor deposition (CVD), at 750 DEG C, is the SiO of 300nm in substrate surface deposit a layer thickness ₂layer and a layer thickness are the SiN layer of 200nm;

(2e) utilizing the method for chemical vapor deposition (CVD), at 750 DEG C, is the SiGe layer of 60nm in Grown a layer thickness, and as base, this layer of Ge component is 25%, and doping content is 5 × 10 ¹⁹cm ^-3;

(2f) method of chemical vapor deposition (CVD) is utilized, at 750 DEG C, in the unadulterated intrinsic layer si layer of Grown a layer thickness 20nm;

(2g) method of chemical vapor deposition (CVD) is utilized, at 750 DEG C, at the unadulterated intrinsic Poly-Si layer of Grown a layer thickness 300nm.

Step 3, prepared by device deep trench isolation.

(3a) utilizing the method for chemical vapor deposition (CVD), at 800 DEG C, is the SiO of 300nm in substrate surface deposit a layer thickness ₂layer;

(3b) utilizing the method for chemical vapor deposition (CVD), at 800 DEG C, is the SiN layer of 200nm in substrate surface deposit a layer thickness;

(3d) utilize chemical vapor deposition (CVD) method, at 800 DEG C, in shallow slot, fill SiO ₂, form device deep trench isolation.

Step 4, prepared by collector electrode shallow-trench isolation.

(4a) SiO on surface is fallen with wet etching ₂and SiN layer;

(4b) utilizing the method for chemical vapor deposition (CVD), at 800 DEG C, is the SiO of 300nm in substrate surface deposit a layer thickness ₂layer;

(4c) utilizing the method for chemical vapor deposition (CVD), at 800 DEG C, is the SiN layer of 200nm in substrate surface deposit a layer thickness;

(4d) photoetching collector electrode shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 300nm;

(4e) utilize chemical vapor deposition (CVD) method, at 800 DEG C, in shallow slot, fill SiO ₂, form collector electrode shallow-trench isolation.

Step 5, prepared by base stage shallow-trench isolation.

(5a) SiO on surface is fallen with wet etching ₂and SiN layer;

(5b) utilizing the method for chemical vapor deposition (CVD), at 800 DEG C, is the SiO of 300nm in substrate surface deposit a layer thickness ₂layer;

(5c) utilizing the method for chemical vapor deposition (CVD), at 800 DEG C, is the SiN layer of 200nm in substrate surface deposit a layer thickness;

(5d) photoetching base stage shallow trench isolation areas, goes out at shallow trench isolation areas dry etching the shallow slot that the degree of depth is 325nm;

(5e) utilize chemical vapor deposition (CVD) method, at 800 DEG C, in shallow slot, fill SiO ₂, form base stage shallow-trench isolation.

Step 6, SiGe HBT is formed.

(6a) SiO on surface is fallen with wet etching ₂and SiN layer;

(6b) utilizing the method for chemical vapor deposition (CVD), at 800 DEG C, is the SiO of 500nm in substrate surface deposit a layer thickness ₂layer;

(6c) photoetching base region, carries out p type impurity injection to this region, makes contact zone doping content be 1 × 10 ²⁰cm ^-3, form base stage;

(6d); Photoetching emitter region, carries out N-type impurity injection to this region, makes doping content be 5 × 10 ¹⁷cm ^-3, form emitter region;

(6e) photoetching collector region, and utilize the method for chemico-mechanical polishing (CMP), remove intrinsic layer si layer and the intrinsic Poly-Si layer of collector region, N-type impurity injection is carried out to this region, makes collector contact district doping content be 1 × 10 ²⁰cm ^-3, form collector electrode;

(6f) to substrate at 1100 DEG C of temperature, annealing 15s, carries out impurity activation, forms SiGe HBT.

Step 7, prepared by MOS active area.

(7a) photoetching MOS active area;

(7b) utilize dry etch process, etch in MOS active area the shallow slot that the degree of depth is 400nm;

(7c) utilize chemical vapor deposition (CVD) method, at 750 DEG C, in shallow slot, growth thickness is the N-type Si resilient coating of 380nm, and this layer of doping content is 5 × 10 ¹⁵cm ^-3;

(7d) utilize chemical vapor deposition (CVD) method, at 750 DEG C, be the N-type SiGe epitaxial loayer of 15nm at substrate surface growth thickness, this layer of Ge component is 30%, and doping content is 5 × 10 ¹⁶cm ^-3;

(7e) utilizing chemical vapor deposition (CVD) method, at 750 DEG C, is the intrinsic relaxation type Si cap layers of 5nm at substrate surface growth thickness.

Step 8, nmos device and PMOS device are formed.

(8a) chemical vapor deposition (CVD) method is utilized, at 800 DEG C, at the SiO of Grown one deck 500nm ₂;

(8b) photoetching PMOS device active area, carries out N-type ion implantation to PMOS device active area, makes its doping content reach 5 × 10 ¹⁷cm ^-3;

(8c) photoetching nmos device active area, utilizes ion implantation technology to carry out P type ion implantation to nmos device region, and form nmos device active area P trap, P trap doping content is 5 × 10 ¹⁷cm ^-3;

(8d) utilizing chemical vapor deposition (CVD) method, at 800 DEG C, is the SiN layer of 5nm in superficial growth a layer thickness;

(8e) utilize chemical vapor deposition (CVD) method, at 800 DEG C, SiN layer grows the polysilicon of one deck 500nm;

(8f) photoetching Poly-Si grid and gate medium, forms the pseudo-grid that 350nm is long;

(8g) photoetching nmos device active area, carries out N-type ion implantation to nmos device active area, and form N-type lightly-doped source drain structure (N-LDD), doping content is 5 × 10 ¹⁸cm ^-3;

(8h) photoetching PMOS device active area, carries out P type ion implantation to PMOS device active area, and form P type lightly-doped source drain structure (P-LDD), doping content is 5 × 10 ¹⁸cm ^-3;

(8i) at substrate surface, chemical vapor deposition (CVD) method is utilized, at 800 DEG C, growth one deck SiO ₂, thickness is 5nm, utilizes dry etch process photoetching to fall unnecessary SiO subsequently ₂, retain gate lateral wall SiO ₂, form side wall;

(8l) by substrate at 1100 DEG C of temperature, annealing 15s, carry out impurity activation.

Step 9, prepared by MOS device grid.

(9a) chemical vapor deposition (CVD) method is utilized, at 800 DEG C, at substrate surface deposit one deck SiO ₂layer, SiO ₂thickness is 500nm thickness;

(9d) grow at substrate surface the lanthana (La that a layer thickness is 5nm ₂o ₃);

(9e) at substrate surface sputtering layer of metal tungsten (W);

Step 10, forms BiCMOS integrated circuit.

(10a) chemical vapor deposition (CVD) method is utilized, at 800 DEG C, at superficial growth one deck SiO ₂layer;

(10b) lithography fair lead;

(10c) metallize;

(10d) photoetching lead-in wire, form the drain electrode of MOS device, source electrode and grid, and bipolar transistor emitter pole, base stage and collector electrode metal lead-in wire, form the BiCMOS integrated device based on plane strain SiGe HBT device and circuit that MOS conducting channel is 350nm.

The BiCMOS integrated device based on plane strain SiGe HBT device that the embodiment of the present invention provides and preparation method's tool have the following advantages:

2. the BiCMOS device based on plane strain SiGe HBT device that prepared by the present invention all have employed quantum well structure in PMOS device structure, can effectively hole be limited in SiGe layer, decrease interface scattering, improve the electric properties such as the frequency of device, current driving ability;

The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims

1., based on a preparation method for the BiCMOS integrated device of plane strain SiGe HBT device, it is characterized in that, comprise the steps:

The first step, choose two panels N-type doping Si sheet, wherein two panels doping content is 1 ~ 5 × 10 ¹⁵cm ^-3, be oxidized two panels Si sheet surface, oxidated layer thickness is 0.5 ~ 1 μm; Using the basis material of a slice wherein as upper strata, and in this upper strata basis material hydrogen injecting, using the basis material of another sheet as lower floor; Chemico-mechanical polishing (CMP) technique is adopted to carry out polishing to two oxide layer surfaces;

3rd step, photoetching bipolar device active area, go out at this photoetching bipolar device active area region dry etching the deep trouth that the degree of depth is 2 ~ 3 μm; Utilize the method for chemical vapor deposition (CVD), at 600 ~ 750 DEG C, this photoetching bipolar device active area region grows Si epitaxial loayer, and thickness is 2 ~ 3 μm, and N-type is adulterated, and doping content is 1 × 10 ¹⁶~ 1 × 10 ¹⁷cm ^-3, as collector region;

8th step, with wet etching fall surface SiO ₂and SiN layer, utilizing the method for chemical vapor deposition (CVD), at 600 ~ 800 DEG C, is the SiO of 300 ~ 500nm in substrate surface deposit a layer thickness ₂layer; Photoetching base region, carries out p type impurity injection to this photoetching base region, makes base contact regions doping content be 1 × 10 ¹⁹~ 1 × 10 ²⁰cm ^-3, form base contact area;

9th step, photoetching emitting area, carry out N-type impurity injection to this photoetching emitting area, makes doping content be 1 × 10 ¹⁷~ 5 × 10 ¹⁷cm ^-3, form emitter region;

Tenth step, photoetching collector region, and utilize the method for chemical polishing, remove intrinsic layer si layer and the intrinsic Poly-Si layer of collector region, N-type impurity injection is carried out to this removal collector region, makes collector contact district doping content be 1 × 10 ¹⁹~ 1 × 10 ²⁰cm ^-3, form collector contact area; And to substrate at 950 ~ 1100 DEG C of temperature, annealing 15 ~ 120s, carries out impurity activation, forms SiGe HBT device;

11 step, photoetching MOS active area, utilize dry etch process, the shallow slot that the degree of depth is 300 ~ 400nm is etched in MOS active area, utilize chemical vapor deposition (CVD) method, at 600 ~ 750 DEG C, trilaminate material is grown continuously: the N-type Si resilient coating of ground floor to be thickness be 280 ~ 380nm, this N-type Si undoped buffer layer concentration is 1 × 10 in this shallow slot ¹⁵cm ^-3~ 5 × 10 ¹⁵cm ^-3; The N-type SiGe epitaxial loayer of the second layer to be thickness be 10 ~ 15nm, this N-type SiGe epitaxial loayer Ge component is 15 ~ 30%, and doping content is 1 × 10 ¹⁶cm ^-3~ 5 × 10 ¹⁶cm ^-3; The intrinsic relaxation Si layer of third layer to be thickness be 3 ~ 5nm;

12 step, utilizing chemical vapor deposition (CVD) method, at 600 ~ 800 DEG C, is the SiO of 300 ~ 500nm in extension material surface deposit a layer thickness ₂layer; Photoetching PMOS device active area, carries out N-type ion implantation to PMOS device active area, makes its doping content reach 1 × 10 ¹⁷cm ^-3~ 5 × 10 ¹⁷cm ^-3; Photoetching nmos device active area, utilizes ion implantation technology to carry out P type ion implantation to nmos device region, and form nmos device active area P trap, P trap doping content is 1 × 10 ¹⁷cm ^-3~ 5 × 10 ¹⁷cm ^-3;

14 step, utilize ion implantation, respectively N-type and P type ion implantation are carried out to nmos device active area and PMOS device active area, form N-type lightly-doped source drain structure (N-LDD) and P type lightly-doped source drain structure (P-LDD), doping content is 1 × 10 ¹⁸cm ^-3~ 5 × 10 ¹⁸cm ^-3;

18 step, utilize wet etching to be removed completely by dummy grid, leave the autoregistration impression that grid in oxide layer are stacking, grow at substrate surface the lanthana La that a layer thickness is 2 ~ 5nm ₂o3; At substrate surface sputtering layer of metal tungsten (W), finally utilize chemico-mechanical polishing (CMP) technology by the tungsten (W) beyond area of grid and lanthana La ₂o3 removes;

2. preparation method according to claim 1, it is characterized in that, based on chemical vapor deposition (CVD) technological temperature involved in the BiCMOS integrated device manufacture process of plane strain SiGeHBT device in this preparation method, maximum temperature is less than or equal to 800 DEG C.

3. preparation method according to claim 1, is characterized in that, base thickness decides according to the epitaxy layer thickness of the 4th step SiGe, gets 20 ~ 60nm.

4., based on a preparation method for the BiCMOS integrated circuit of plane strain SiGe HBT device, it is characterized in that, comprise the steps:

Step 1, implementation method prepared by SOI substrate material is:

(1a) choosing N-type doping content is 1 × 10 ¹⁵cm ^-3si sheet, be oxidized its surface, oxidated layer thickness is 1 μm, as the basis material on upper strata, and in this upper strata basis material hydrogen injecting;

(1e) substrate temperature after bonding is raised 200 DEG C, make the hydrogen place fracture that upper strata basis material is injecting, the part unnecessary to upper strata basis material is peeled off, retain the Si material of 100nm, and carry out chemico-mechanical polishing (CMP) at this hydrogen place break surface, form soi structure;

Step 2, implementation method prepared by epitaxial material is:

(2a) photoetching bipolar device active area, goes out at this photoetching bipolar device active area region dry etching the deep trouth that the degree of depth is 2 μm;

(2b) utilize the method for chemical vapor deposition (CVD), at 600 DEG C, grow the N-type epitaxial si layer that a layer thickness is 2 μm in this deep trouth, as collector region, this N-type epitaxial si layer doping content is 1 × 10 ¹⁶cm ^-3;

(2e) utilizing the method for chemical vapor deposition (CVD), at 600 DEG C, is the SiGe layer of 20nm in Grown a layer thickness, and as base, this SiGe layer Ge component is 15%, and doping content is 5 × 10 ¹⁸cm ^-3;

Step 3, implementation method prepared by device deep trench isolation is:

(4a) SiO on surface is fallen with wet etching ₂and SiN layer;

(5a) SiO on surface is fallen with wet etching ₂and SiN layer;

Step 6, the implementation method that SiGe HBT is formed is:

(6a) SiO on surface is fallen with wet etching ₂and SiN layer;

(6c) photoetching base region, carries out p type impurity injection to this photoetching base region, makes contact zone doping content be 1 × 10 ¹⁹cm ^-3, form base stage;

(6d) photoetching emitter region, carries out N-type impurity injection to this region, photoetching emitter region, makes doping content be 1 × 10 ¹⁷cm ^-3, form emitter region;

(6e) photoetching collector region, and utilize the method for chemico-mechanical polishing (CMP), remove intrinsic layer si layer and the intrinsic Poly-Si layer of collector region, N-type impurity injection is carried out to this removal collector region, makes collector contact district doping content be 1 × 10 ¹⁹cm ^-3, form collector electrode;

Step 7, the implementation method that MOS is prepared active area is:

(7a) photoetching MOS active area;

(7c) utilize chemical vapor deposition (CVD) method, at 600 DEG C, in shallow slot, growth thickness is the N-type Si resilient coating of 280nm, and this N-type Si undoped buffer layer concentration is 1 × 10 ¹⁵cm ^-3;

(7d) utilize chemical vapor deposition (CVD) method, at 600 DEG C, be the N-type SiGe epitaxial loayer of 10nm at substrate surface growth thickness, this N-type SiGe epitaxial loayer Ge component is 15%, and doping content is 1 × 10 ¹⁶cm ^-3;

Step 9, implementation method prepared by MOS device grid is:

(9d) grow at substrate surface the lanthana La that a layer thickness is 2nm ₂o ₃;

(9e) at substrate surface sputtering layer of metal tungsten (W);

(9f) utilize chemico-mechanical polishing (CMP) technology by the tungsten (W) beyond area of grid and lanthana La ₂o ₃removing;

Step 10, the implementation method forming BiCMOS integrated circuit is:

(10b) lithography fair lead;

(10c) metallize;