CN102677160B - Seeding method and system for growing sapphire by using kyropoulos method - Google Patents
Seeding method and system for growing sapphire by using kyropoulos method Download PDFInfo
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- CN102677160B CN102677160B CN201210171877.8A CN201210171877A CN102677160B CN 102677160 B CN102677160 B CN 102677160B CN 201210171877 A CN201210171877 A CN 201210171877A CN 102677160 B CN102677160 B CN 102677160B
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000010899 nucleation Methods 0.000 title claims abstract description 42
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 31
- 239000010980 sapphire Substances 0.000 title claims abstract description 31
- 239000002245 particle Substances 0.000 claims abstract description 70
- 230000005684 electric field Effects 0.000 claims abstract description 68
- 230000001133 acceleration Effects 0.000 claims abstract description 18
- 238000010894 electron beam technology Methods 0.000 claims abstract description 16
- 125000004429 atom Chemical group 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Abstract
The invention discloses a seeding method and system for growing sapphire by using a kyropoulos method. The method comprises the following steps of: generating electrons inside an observation window through an electronic transmitter; accelerating the generated electrons by acceleration voltage to obtain a high-energy electron beam, and hitting atoms or molecules volatilizing from the interior of a furnace body with the obtained high-energy electron beam, so as to form charged particles; and applying an electric field or magnetic field with specific intensity to two sides of the observation window, and changing the movement direction of the charged particles under the action of the electric field or the magnetic field so that the charged particles are absorbed on the inner wall of the observation window, so as to protect the observation window. The seeding method and the system for growing the sapphire by using the kyropoulos method, provided by the invention, are capable of changing the movement direction of the charged particles by applying the electric field or the magnetic field with the specific intensity to the two sides of the observation window so that the charged particles are absorbed on the inner wall of the observation window before arriving at the observation window; and therefore, the technical problem of fuzziness of the observation window is solved; and simultaneously, the method and the system are capable of providing enough time guarantee for a seeding process.
Description
Technical field
The invention belongs to technical field of crystal growth, relate to a kind of method of growing sapphire, particularly relate to a kind of seeding methods of kyropoulos growing sapphire; Meanwhile, the invention still further relates to a kind of seeding system of kyropoulos growing sapphire.
Background technology
Sapphirely consist of aluminum oxide (Al
2o
3), be combined into covalent linkage pattern by three Sauerstoffatoms and two aluminium atoms, its crystalline structure is hexagonal lattice structure.Due to sapphire there is the high velocity of sound, high temperature resistant, anticorrosive, high rigidity, high light transmittance, fusing point are high features such as (2045 DEG C), be therefore often used as the material of sealed cell.
The growth method existing a variety of method at present of sapphire crystal material, mainly contain: kyropoulos (i.e. Kyropolos method, be called for short Ky method), EFG technique (i.e. edge defined film-fed growth techniques method, be called for short EFG method), heat-exchanging method (i.e. heat exchange method method, be called for short HEM method), crystal pulling method (i.e. Czochralski, be called for short Cz method) Bridgman method (i.e. Bridgman method, or falling crucible method) etc.
At present, in the sapphire crystal growth method of LED field, kyropoulos is one of method of the most applicable large-scale industrial production of generally acknowledging in the world.The requirement of the method to seeding is higher, and the quality of crystal mass depends on the seeding skill of technician very much.And in seeding process, technician needs to utilize view port to make correct judgement for a long time, and in actual production process, the volatilization due to atom various in stove, lewis' acid causes the visuality of view port to be seriously damaged, this causes great difficulty to seeding.
The long sapphire of a kyropoulos step most important compared to additive method is exactly the process of lower seed crystal seeding, period technician needs the situation of being checked seed crystal touching melt by viewing window, and then make the most correct judgement, but the process duration of seeding is long usually, generally can more than 20 hours to seeding end of processing from melting sources, in the process, various atom in body of heater, lewis' acid can constantly volatilize and be adsorbed on viewing window, cause view port more and more fuzzyyer, extreme difficulties is caused to seeding, the crystal yield rate of coming out of the stove also just declines thereupon.
Summary of the invention
Technical problem to be solved by this invention is: the seeding methods providing a kind of kyropoulos growing sapphire, can solve the problem that in kyropoulos long sapphire seeding process, view port is fuzzy.
In addition, the present invention also provides a kind of seeding system of kyropoulos growing sapphire, can solve the problem that in kyropoulos long sapphire seeding process, view port is fuzzy.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A seeding methods for kyropoulos growing sapphire, is characterized in that, described method comprises the steps:
Step S1, viewing window inside produce electronics by electronic emitter;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage accelerates, and clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle; The scope of described acceleration voltage is 20kv ~ 50kv; The atom evaporated from furnace interior or molecule are one or more metal M o, W atom, O atom;
Step S3, add electric field or the magnetic field of a certain strength in viewing window both sides, changed the direction of motion of these charged particles by the effect in electric field or magnetic field, make it be adsorbed on the inwall of viewing window, to protect view port; Add specific extra electric field in viewing window both sides, extra electric field is uniform electric field, electric field strength E>=2mv
2d/(qL
2); Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window; Or, add specific magnetic field in viewing window both sides, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
A seeding methods for kyropoulos growing sapphire, described method comprises the steps:
Step S1, viewing window inside produce electronics by electronic emitter;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage accelerates, and obtains high-power electron beam and clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle;
Step S3, add electric field or the magnetic field of a certain strength in viewing window both sides, changed the direction of motion of these charged particles by the effect in electric field or magnetic field, make it be adsorbed on the inwall of viewing window, to protect view port.
As a preferred embodiment of the present invention, the scope of the acceleration voltage in described step S2 is 20kv ~ 50kv.
As a preferred embodiment of the present invention, in described step S2, the atom evaporated from furnace interior or molecule are one or more metal M o, W atom, O atom.
As a preferred embodiment of the present invention, add specific extra electric field in described step S3, extra electric field is uniform electric field, electric field strength E>=2mv
2d/(qL
2); Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
As a preferred embodiment of the present invention, in described step S3, add specific magnetic field, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
A seeding system for kyropoulos growing sapphire, described system comprises:
Electronic emitter, in order to produce electronics in viewing window inside;
Voltage accelerator module, in order to produce acceleration voltage; The electronics that described electronic emitter produces obtains high-power electron beam after acceleration voltage, and high-power electron beam clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle;
Electric field or magnetic field generation unit, in order in the electric field or the magnetic field that produce a certain strength in viewing window both sides, changed the direction of motion of these charged particles, make it be adsorbed on the inwall of viewing window, to protect view port by the effect in electric field or magnetic field.
As a preferred embodiment of the present invention, described electric field or magnetic field generation unit produce specific extra electric field, and extra electric field is uniform electric field, electric field strength E>=2mv
2d/(qL
2); Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
As a preferred embodiment of the present invention, described electric field or magnetic field generation unit produce specific magnetic field, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
Beneficial effect of the present invention is: the seeding methods of the kyropoulos growing sapphire that the present invention proposes and system, by adding electric field or the magnetic field of a certain strength in viewing window both sides, change the direction of motion of charged particle, thus make it before not arriving view port, be adsorbed on viewing window inwall, solve the technical barrier that view port is fuzzy.Meanwhile, the present invention can provide the sufficient time to ensure for seeding process, the effective duration of service extending view port, when not affecting structure in the stove, greatly can improve long brilliant success ratio.
Accompanying drawing explanation
Fig. 1 is the principle schematic of seeding methods of the present invention.
Fig. 2 is the schema of seeding methods of the present invention.
Fig. 3 is the schematic diagram at viewing window both sides added electric field in seeding methods of the present invention.
Fig. 4 is the schematic diagram adding magnetic field in seeding methods of the present invention in viewing window both sides.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Refer to Fig. 1; present invention is disclosed a kind of seeding methods of kyropoulos growing sapphire; by producing electronics in viewing window inside by electronic emitter; after acceleration voltage accelerates, obtain high-power electron beam also clash into the atom or molecule that are evaporated by furnace interior; it is made to become ion; then electric field or the magnetic field of a certain strength is added in viewing window both sides; the direction of motion of these charged particles is changed by the effect in electric field or magnetic field; make it be adsorbed on the inwall of viewing window, thus reach the object of protection view port.
Refer to Fig. 2, the seeding methods of kyropoulos growing sapphire of the present invention comprises the steps:
[step S1] produces electronics in viewing window inside by electronic emitter.
The electronics that [step S2] step S1 produces obtains high-power electron beam after acceleration voltage accelerates, and clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle.The scope of described acceleration voltage is that 20kv ~ 50kv(is as 30kv); The atom evaporated from furnace interior or molecule are one or more metal M o, W atom, O atom;
[step S3] adds electric field or the magnetic field of a certain strength in viewing window both sides, changed the direction of motion of these charged particles, make it be adsorbed on the inwall of viewing window, to protect view port by the effect in electric field or magnetic field.
Refer to Fig. 3, can add specific extra electric field in viewing window 1 both sides, extra electric field is uniform electric field, electric field strength E>=2mv
2d/(qL
2); Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
Refer to Fig. 4, also can add specific magnetic field in viewing window 1 both sides, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
Be described above the seeding methods of kyropoulos growing sapphire of the present invention, the present invention, while the above-mentioned seeding methods of announcement, also discloses a kind of seeding system of kyropoulos growing sapphire; Described system comprises: electronic emitter, voltage accelerator module, electric field or magnetic field generation unit.
Electronic emitter is in order to produce electronics in viewing window inside.
Voltage accelerator module is in order to produce acceleration voltage; The electronics that described electronic emitter produces obtains high-power electron beam after acceleration voltage, and high-power electron beam clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle.
Electric field or magnetic field generation unit in order in the electric field or the magnetic field that produce a certain strength in viewing window both sides, are changed the direction of motion of these charged particles, make it be adsorbed on the inwall of viewing window, to protect view port by the effect in electric field or magnetic field.
Described electric field or magnetic field generation unit can be electric field generation unit, and in order to produce specific extra electric field, extra electric field is uniform electric field, electric field strength E>=2mv
2d/(qL
2); Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.As shown in Figure 3, electric field generation unit comprises the power supply, switch, adjustable resistor, two the copper electrode plates that are connected; Two copper electrode plates connect the two poles of the earth of power supply respectively.
Or described electric field or magnetic field generation unit can be magnetic field generation unit, in order to produce specific magnetic field, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.As shown in Figure 4, magnetic field generation unit comprises magnet 3, wire 2, power supply, adjustable resistor, switch, and power supply, adjustable resistor, switch are connected by wire 2; Part wire 2 is wrapped on magnet 3, as magnetic induction coil.
In sum, the seeding methods of the kyropoulos growing sapphire that the present invention proposes and system, by adding electric field or the magnetic field of a certain strength in viewing window both sides, change the direction of motion of charged particle, thus make it before not arriving view port, be adsorbed on viewing window inwall, solve the technical barrier that view port is fuzzy.Meanwhile, the present invention can provide the sufficient time to ensure for seeding process, the effective duration of service extending view port, when not affecting structure in the stove, greatly can improve long brilliant success ratio.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (7)
1. a seeding methods for kyropoulos growing sapphire, is characterized in that, described method comprises the steps:
Step S1, viewing window inside produce electronics by electronic emitter;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage accelerates, and clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle; The scope of described acceleration voltage is 20kv ~ 50kv; The atom evaporated from furnace interior or molecule are one or more metal M o, W atom, O atom;
Step S3, add electric field or the magnetic field of a certain strength in viewing window both sides, changed the direction of motion of these charged particles by the effect in electric field or magnetic field, make it be adsorbed on the inwall of viewing window, to protect view port; Add specific extra electric field in viewing window both sides, extra electric field is uniform electric field, electric field strength E>=2mv
2d/ (qL
2); Wherein, m represents the quality of charged particle, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window; Or, add specific magnetic field in viewing window both sides, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged particle, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
2. a seeding methods for kyropoulos growing sapphire, is characterized in that, described method comprises the steps:
Step S1, viewing window inside produce electronics by electronic emitter;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage accelerates, and obtains high-power electron beam and clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle;
Step S3, add electric field or the magnetic field of a certain strength in viewing window both sides, changed the direction of motion of these charged particles by the effect in electric field or magnetic field, make it be adsorbed on the inwall of viewing window, to protect view port.
3. the seeding methods of kyropoulos growing sapphire according to claim 2, is characterized in that:
The scope of the acceleration voltage in described step S2 is 20kv ~ 50kv.
4. the seeding methods of kyropoulos growing sapphire according to claim 2, is characterized in that:
In described step S2, the atom evaporated from furnace interior or molecule are one or more metal M o, W atom, O atom.
5. the seeding methods of kyropoulos growing sapphire according to claim 2, is characterized in that:
Add specific extra electric field in described step S3, extra electric field is uniform electric field, electric field strength E>=2mv
2d/ (qL
2); Wherein, m represents the quality of charged particle, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
6. the seeding methods of kyropoulos growing sapphire according to claim 2, is characterized in that:
Add specific magnetic field in described step S3, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged particle, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
7. a seeding system for kyropoulos growing sapphire, is characterized in that, described system comprises:
Electronic emitter, in order to produce electronics in viewing window inside;
Voltage accelerator module, in order to produce acceleration voltage; The electronics that described electronic emitter produces obtains high-power electron beam after acceleration voltage, and high-power electron beam clashes into the atom or molecule that are evaporated by furnace interior, forms charged particle;
Electric field or magnetic field generation unit, in order in the electric field or the magnetic field that produce a certain strength in viewing window both sides, changed the direction of motion of these charged particles, make it be adsorbed on the inwall of viewing window, to protect view port by the effect in electric field or magnetic field;
Described electric field or magnetic field generation unit produce specific extra electric field, and extra electric field is uniform electric field, electric field strength E>=2mv
2d/ (qL
2); Wherein, m represents the quality of charged particle, and v represents speed when particle enters viewing window, and be set as uniform motion, d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window; Or described electric field or magnetic field generation unit produce specific magnetic field, field direction perpendicular to the direction of motion of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged particle, and v represents speed when particle enters viewing window, and d represents viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
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