CN102666002B - 半导体安装用钎料球和电子部件 - Google Patents

半导体安装用钎料球和电子部件 Download PDF

Info

Publication number
CN102666002B
CN102666002B CN201180004305.4A CN201180004305A CN102666002B CN 102666002 B CN102666002 B CN 102666002B CN 201180004305 A CN201180004305 A CN 201180004305A CN 102666002 B CN102666002 B CN 102666002B
Authority
CN
China
Prior art keywords
solder ball
quality
solder
diameter
ball
Prior art date
Application number
CN201180004305.4A
Other languages
English (en)
Other versions
CN102666002A (zh
Inventor
寺岛晋一
田中将元
木村胜一
Original Assignee
新日铁住金高新材料株式会社
日铁住金新材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP182934/2010 priority Critical
Priority to JP2010182934 priority
Application filed by 新日铁住金高新材料株式会社, 日铁住金新材料股份有限公司 filed Critical 新日铁住金高新材料株式会社
Priority to PCT/JP2011/067851 priority patent/WO2012023440A1/ja
Publication of CN102666002A publication Critical patent/CN102666002A/zh
Application granted granted Critical
Publication of CN102666002B publication Critical patent/CN102666002B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C13/00Alloys based on tin
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • H01L2224/05082Two-layer arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • H01L2224/05083Three-layer arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13005Structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354Coating
    • H01L2224/13599Material
    • H01L2224/13686Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/13688Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01025Manganese [Mn]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3512Cracking
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/36Material effects
    • H01L2924/365Metallurgical effects
    • H01L2924/3651Formation of intermetallics
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/37Effects of the manufacturing process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04Soldering or other types of metallurgic bonding
    • H05K2203/041Solder preforms in the shape of solder balls
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3463Solder compositions in relation to features of the printed circuit board or the mounting process

Abstract

本发明涉及一种半导体安装用的钎料球和具有该钎料球的电子部件,提供即使是近年的250μm以下的直径的钎料球也可确保充分的热疲劳特性的钎料球和具有该钎料球的电子部件。所述半导体安装用钎料球,其特征在于,是采用以Sn为主体,含有0.1~2.5质量%的Ag、0.1~1.5质量%的Cu以及总计为0.0001~0.005质量%的Mg、Al和Zn之中的1种或2种以上的钎料合金形成的半导体安装用钎料球,在该钎料球的表面具有1~50nm的厚度的非晶相,所述非晶相含有Mg、Al和Zn之中的1种或2种以上、和O以及Sn。所述电子部件使用了该半导体安装用钎料球。

Description

半导体安装用钎料球和电子部件

技术领域

[0001] 本发明涉及半导体安装用钎料球(焊料球,Solder ball)和使用了该钎料球的电子部件(Electronic member)。

背景技术

[0002] 在印刷配线基板等中安装有电子部件。电子部件一般采用被称为所谓的回流焊(Reflow)法的方法安装,该方法是在将印刷配线基板等和电子部件之间利用半导体安装用钎料球(以下,称为「钎料球」)和钎剂(Flux)临时接合后,加热印刷配线基板整体,使上述钎料球熔融,然后将基板冷却到常温,将钎料球固化,由此确保牢固的钎焊接合部。

[0003] 为了将电子装置废弃处理时的对环境的不良影响限制在最小限度,一直在要求作为电子装置的连接材料使用的钎料合金的无铅化。其结果,作为上述钎料球的组成,一般广泛使用Sn-Ag共晶组成(Ag:3.5质量%、Sn:余量)和例如在专利文献I和专利文献2中公开的、在上述Sn-Ag共晶的周边组成中添加了作为第三元素的少量的Cu的钎料组成。另夕卜,在最近急剧增加的BGA (BalI Grid Array ;球栅阵列封装)用钎料球中,也主要使用与上述同样的组成的钎料球。

[0004] 使电子设备工作时,起因于为了工作而施加的电流,在电子设备内部产生热。由于上述钎料球连接了硅芯片和树脂基板等这些热膨胀系数不同的材料,因此与电子设备的工作相伴,钎料球被置于热疲劳的环境下。其结果,有时在钎料球的内部产生被称为裂纹的龟裂,有时产生对通过钎料球的电信号的授受带来障碍的问题。除了这样的状况以外,与近年的便携型电子设备的小型化、轻量化的加速相伴,在组装于电子设备中的印刷基板和集成电路元件基板中,用于电子部件的钎焊接合部的接合面积被缩小,提高热疲劳特性的事项受到高于以往的重视。在以往的球尺寸即钎料球的直径为300 μ m以上的情况下,由钎料球和电极构成的接合部的面积充分大,因此即使在回流焊工序中没有完全除去存在于钎料球的表面的氧化物层、一部分的氧化物层残存于接合界面,钎料球和电极之间的接合强度的降低也不成问题,对热疲劳特性也不造成不良影响。因此,在以往的300μπι以上的直径的Sn-Ag-Cu系钎料球中,为了确保热疲劳特性,有效的不是与钎料球表面的氧化物层的除去相伴的接合界面的接合强度的确保,而是将Ag的浓度设为3〜4质量%左右。其原因认为是通过提高Ag的浓度使钎料球中较多地析出被称为Ag3Sn的金属间化合物,通过析出硬化将钎料球硬化,成为相对于外力,钎料球难以变形的状态,由此即使产生与热疲劳相伴的载荷,通过减小与热疲劳相伴的位移量本身,能够延迟在钎料球的内部产生的龟裂的进行。

[0005] 另外,对钎料球分别要求确保钎焊时的润湿性、能够在极低的温度下钎焊的低的熔点、确保在上述安装时搭载钎料球的装置能够将钎料球准确地图像识别的表面品质、或者确保即使电子设备无意中落下也不发生故障的耐落下性。

[0006] 现有技术文献

[0007] 专利文献1:日本特开2003-1481号公报

[0008] 专利文献2:日本特开2004-1100号公报发明内容

[0009] 在以Sn、Ag和Cu为主体的电子部件用钎料球中,钎料球的直径为例如以往的300 μ m以上时,上述热疲劳特性被确保为充分的程度,与此相对,在近年的250 μ m以下的直径下,上述热疲劳特性不能够确保到充分的程度,成为极其深刻的问题。

[0010] 因此,在本发明中,涉及一种半导体安装用的钎料球和具有该钎料球的电子部件,提供即使是250 μ m以下的直径的钎料球,也能够确保充分的热疲劳特性的半导体安装用钎料球和使用了该钎料球的电子部件。

[0011 ] 用于解决上述课题的手段如下。

[0012] 权利要求1涉及的半导体安装用钎料球,其特征在于,是采用以Sn为主体,含有

0.1〜2.5质量%的Ag、0.1〜1.5质量%的Cu以及总计为0.0001〜0.005质量%的Mg、Al和Zn之中的I种或2种以上的钎料合金形成的半导体安装用钎料球,在钎料球的表面具有I〜50nm的厚度的非晶相,上述非晶相含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn。

[0013] 再者,所谓「主体」是指占90质量%以上。

[0014] 权利要求2涉及的半导体安装用钎料球,其特征在于,是采用以Sn为主体,含有

0.1〜1.9质量%的六8、0.I〜1.0质量%的Cu以及总计为0.0001〜0.005质量%的Mg、Al和Zn之中的I种或2种以上的钎料合金形成的半导体安装用钎料球,在钎料球的表面具有I〜50nm的厚度的非晶相,上述非晶相含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn。

[0015] 权利要求3涉及的半导体安装用钎料球,其特征在于,在权利要求1或2中,上述钎料合金的Ag浓度为0.5〜1.9质量%。

[0016] 权利要求4涉及的半导体安装用钎料球,其特征在于,在权利要求1〜3的任一项中,上述钎料合金还含有0.01〜5质量%的Bi。

[0017] 权利要求5涉及的半导体安装用钎料球,其特征在于,在权利要求1〜4的任一项中,上述钎料合金还含有总计为0.0005〜0.5质量%的N1、P、Sb、Ce、La、Co、Fe和In之中的I种或2种以上。

[0018] 权利要求6涉及的电子部件,是具有钎焊接合部的电子部件,其特征在于,在该钎焊接合部的至少一部分中使用了权利要求1〜5的任一项所述的半导体安装用钎料球。

[0019] 如上述那样,如果使用本发明的半导体安装用钎料球和电子部件,则即使是采用具有250 μ m以下的直径的钎料球形成的接合部也能够确保充分的热疲劳特性。

具体实施方式

[0020] 本发明者们专心研讨的结果分别判明:即使将通过提高Ag的浓度来延迟在钎料球的内部进展的龟裂的进行这一以往的想法应用于250μπι以下的直径的钎料球,热疲劳特性也不能够确保到充分的程度的原因是:在钎料球的表面产生的氧化物层的过剩的生长;此外,该现象在将出厂后的钎料球保管数个月的期间后使用时变得显著。这是由下述的情况造成的:(I)在250 μ m以下的直径时每单位体积的钎料球的表面积必然增加,因此随着时间的经过,钎料球的表面被氧化,钎料球表面的氧化物层较厚地生长到不能利用回流焊工序时的钎剂彻底除去的程度,在回流焊后也残存的氧化物容易残存于钎料球和电极的接合界面;以及,(2)在250 μ m以下的直径时电极和钎料球接合的面积必然变小,因此即使产生一点点的氧化物的残存,在单位接合面积中所占的比例也成为相当量,因此在250 μ m以下的直径的钎料球中,即使小的疲劳次数,钎料球和电极之间的接合强度也降低,其结果,热疲劳特性劣化。

[0021] 因此,本发明者们专心研究的结果发现:为了抑制上述的氧化物层的过剩的生长,如果在钎料球的表面,以I〜50nm的厚度形成含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn的非晶相,则即使在将出厂后的钎料球保管数个月期间后使用时,钎料球的氧化物层的厚度也能够保持与出厂当时的厚度相同的程度地薄(再者,所谓钎料球的表面,是指从钎料球的表面到80nm的深度的区域)。并且,该氧化物层可以利用回流焊工序时的钎剂没有问题地除去。上述的效果起因于下述原因:在氧化物层仅由结晶质的氧化锡构成的情况下,结晶质的氧化锡随着时间的经过与大气中所含有的氧反应而生长,由此氧化物层的厚度增加,与此相对,上述非晶相,即使时间经过也不怎么进行与大气中的氧的反应,氧化物层的厚度基本不增加。认为这是下述情况参与的:结晶质的氧化锡在内部存在晶界,大气中的氧可以沿着氧化锡的晶界扩散到内部,与此相对,在上述非晶相中不存在晶界,大气中的氧难以扩散到内部。为了得到上述的效果,非晶相以I〜50nm的厚度形成即可。但是,如果非晶相低于lnm,则难以得到这样的效果。另一方面,虽然非晶相即使是超过50nm的厚度也可同样地得到上述效果,但是如果考虑后述的制法,则为了形成为这样的厚度必须以相当的冷却速度将钎料球的表面急冷,将氧化物层的厚度均匀地控制为规定的厚度在工业上变得困难,因此不优选。更优选的是将非晶相的厚度设为30nm以下,如果这样的话则可以精度更加良好地实施氧化物层的厚度的控制,因此优选。非晶相不一定需要单独地覆盖钎料球的表面,也可以与结晶性的氧化锡和/或微细结晶的氧化锡混杂,但该情况下,非晶相需要占全体氧化物层的30%以上。

[0022] 但是,如果非晶相低于全体氧化物层的厚度的30%,则结晶性的氧化锡和/或微细结晶的氧化锡随着时间的经过较厚地生长,因此该情况下难以得到对于氧化物层的生长的抑制效果。另外,在非晶相的氧化物层不含有Mg、Al和Zn之中的I种或2种以上而仅包含Sn和O的情况下,即使是非晶相,虽然为少许,也会随着时间的经过氧化物层变厚,因此得不到对于氧化物层的生长的抑制效果。

[0023] 为了得到这样的含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn的非晶相,优选:在钎料合金中进一步添加总计为0.0001〜0.005质量%的Mg、Al和Zn之中的I种或2种以上。认为这是因为,由于Mg、Al和Zn是比Sn容易氧化的金属(贱金属),因此比Sn优先地氧化,由此在急冷状态下形成非晶状的氧化物层。另一方面,如果Mg、Al和Zn之中的I种或2种以上的总计低于0.0001质量%,则得不到形成非晶状的氧化物层的效果,相反如果高于0.005质量%,则Mg、Al或Zn激烈地氧化,球不成为球状而成为多角形状,因此不优选。再者,即使添加Mg、Al或Zn也未必得到「含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn的非晶相」,根据添加浓度,会形成结晶质和/或微细结晶的氧化物。为了确切地得到非晶相,优选:Mg、Al或Zn的添加浓度相应于作为原料的Sn中所含有的氧浓度来进行控制,具体地讲,设为作为原料的Sn中的氧浓度的0.3〜1.0倍左右是最有效的。例如,当为较少的添加、低于钎料球中所含有的氧浓度的0.3倍时,会形成不含有Mg、Al或Zn的结晶质和/或微细结晶的SnO和/或SnO2,相反,如果为过剩的添力卩、超过钎料球中所含有的氧浓度的1.0倍的话,则会形成结晶质和/或微细结晶的Mg0、Al203或者ZnO等。优选以Mg为主体来添加。这是因为,Mg使上述的球变形为多角形状的担心少,因此即使进行上限值即0.005质量%的添加,也看不到特别的变形。与此相对,Al、Zn比Mg容易氧化,因此如果进行上限值即0.005质量%的添加,则即使是后述的制法,当因某些原因变为容易氧化的环境时,也会产生下述情况:在球的表面,尽管微小但将球变形为多角形状。这样的球表面的氧化的痕迹,可以利用例如如FF-SEM(Field Emiss1n-Scanning ElectronMicroscope ;场发射扫描电子显微镜)那样高分辨率的电子显微镜观察,在以通常的LaB6或钨作为灯丝的SEM中,不能够缩小电子枪,难以观察上述氧化的痕迹。

[0024] 非晶相的鉴定,利用透射型电子显微镜(TEM !Transmiss1n ElectronMicroscope)的衍射图以及并设于TEM的能量分散型X射线分析法(EDX ;EnergyDispersive X-ray spectrometry)进行,非晶相的厚度采用上述的TEM或者俄歇电子分析法(AES ;Auger Electron Spectroscopy)测定时精度良好,实绩也丰富,从而优选。

[0025] 另外,本发明者们进一步反复研讨的结果明确了:在「即使将通过提高Ag的浓度来延迟在钎料球的内部进展的龟裂的进行这一以往的想法应用于250 μ m以下的直径的钎料球,热疲劳特性也不能够确保到充分的程度」这一上述的课题中,存在另一个原因。这与以下情况相关:一般地「热应变量~位移量+球的大小」这一关系成立,但由于位移量由构成器件的材料的热膨胀系数差决定因此大致一定,与此相对,热应变量随着球的大小变小而变大,因此当例如钎料球的直径为250 μ m以下时热应变量变得比钎料球的直径为300 μ m以上时大,起因于下述情况:

[0026] (I)钎料 球的直径为300 μ m以上:

[0027] 由于没有超过钎料球的变形能力,因此破坏在钎料球内发生;

[0028] (2)钎料球的直径为250 μ m以下:

[0029] 当为硬的球时,由于超过钎料球的变形能力,因此发生接合界面破坏,当为柔软的球时,由于没有超过钎料球的变形能力,因此破坏在钎料球内发生。也就是说,在(I)的情况下,无论硬的钎料球还是柔软的钎料球,热应变量都在钎料的变形能力的范围内,因此使用硬的钎料球时可以使钎料球成为更加难以变形的状态,其结果,位移量本身变小,因此能够延迟在钎料球的内部进展的龟裂的进行,热疲劳特性优异,与此相对,在(2)的钎料球的直径为250 μ m以下这样的情况下,如果使用硬的钎料球则热应变量超过钎料的变形能力的范围,因此成为相对于热应变量,钎料球未充分地变形的状态,因此,接合界面承担变形的不足部分,龟裂不在钎料球的内部而是沿接合界面进展。此时,由于在接合界面中较厚地生长了脆性的金属间化合物,因此在龟裂沿接合界面进展的情况下,龟裂(例如如破坏玻璃时那样)快速地进展,热疲劳特性变得恶劣。

[0030] (3)本发明者们专心研讨的结果发现:在如钎料球的直径为250 μ m以下那样产生大的热应变量的环境下,不同于以往的想法,如果将钎料合金中的Ag的浓度设为2.5质量%以下,则钎料球软质化,由此将与钎料球的小径化相伴剧增的热应变量通过钎料球自身发生变形来吸收,可以避免剪切应力也作用于接合界面,能够与300 μ m以上的直径的情况同样地确保龟裂在钎料球的内部进展的断裂模式。这样,如果热应变量超过钎料的变形能力的范围,则龟裂沿接合界面进展,因此热疲劳特性变得恶劣,但如果热应变量没有超过钎料的变形能力的范围,则越是硬的钎料,可使钎料球成为越难以变形的状态,在钎料球的内部进展的龟裂的进行变慢,热疲劳特性优异。也就是说,在如钎料球的直径为250μπι以下那样产生大的热应变量的环境下提高热疲劳特性的要点,可以说是在热应变量没有超过钎料的变形能力的范围之中提高钎料中的Ag浓度从而使钎料较硬。

[0031 ] 另一方面,如果Ag的浓度超过2.5质量%,则钎料的硬度过于变硬,如上述那样热疲劳试验时的龟裂在上述的脆性的金属间化合物中进展,热疲劳寿命变得极端地短。

[0032] 当Ag的浓度低于0.1质量%时,钎料球的熔点提高到与Sn的熔点同等的232°C附近,因此,不得不将作为制造条件之一的回流焊温度设定得较高,招致生产成本的增加,在工业上不优选。

[0033] 也就是说,适当的Ag浓度,在直径为250 μ m以下的情况下,为0.1〜2.5质量%。更优选的是,在直径为250 μ m以下的情况下,Ag的浓度为0.5〜2.5质量%,这样的话在工业上可以应用较低的回流焊温度,因此优选,更优选的是,Ag的浓度为0.9〜2.2质量%,这样的话可平衡良好地同时得到良好的热疲劳特性和在低的回流焊温度下的操作这两个优点。

[0034] 另外,为了确保钎料球的润湿性,将Cu的浓度设为0.1〜1.5质量%即可。另一方面,在Cu的浓度低于0.1质量%时得不到这样的效果,相反,如果Cu的浓度超过1.5质量%,则钎料球容易氧化,因此Cu的上限值为1.5质量%。但是,优选将Cu的浓度设为

0.1〜1.2质量%,如果这样的话则在以含有氧浓度为30ppm以上的较高的氧的Sn作为原料时也可以避免氧化的问题,因此优选,更优选将Cu的浓度设为0.1〜1.0质量%,如果这样的话则其效果更加提高,因此优选。

[0035] 也就是说,为了解决上述课题,在钎料球的直径为250 μ m以下的情况下,使用下述的半导体安装用钎料球即可,所述半导体安装用钎料球的特征在于,是由下述钎料合金构成的钎料球,所述钎料合金以Sn为主体,含有0.1〜2.5质量%的Ag、0.1〜1.5质量%的Cu、和总计为0.0001〜0.005质量%的Mg、Al与Zn之中的I种或2种以上,在钎料球的表面,具有I〜50nm的厚度的非晶相,上述非晶层含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn。

[0036] 此外,在钎料球的直径为180 μ m以下的情况下,球的大小变小,与此相对,在热疲劳试验时给予钎料的位移量为与球的直径为300 μ m或250 μ m的情况相同的程度,因此热应变的量(〜位移量+球的大小)更进一步变大。因此,即使热疲劳试验的条件相同,对于钎料的影响也变得更严酷,因此在热疲劳试验时,龟裂开始在脆性的金属间化合物中进展的银浓度的上限值降低。本申请发明者们专心研讨的结果发现:在球的直径为ΙΟΟμπι〜180 μ m的情况下,优选将钎料合金的Ag浓度的上限值设为1.9质量%。即发现:如果钎料合金中的Ag的浓度超过1.9质量%,则硬度过于变高,不能够通过使钎料球自身发生变形来使钎料吸收热疲劳时的剪切应力,因此成为龟裂不能够在钎料球的内部进展而在接合界面的脆性相中进展的断裂模式,热疲劳特性容易劣化。

[0037] 也就是说,在直径为100 μ m〜180 μ m的情况下的适当的Ag浓度为0.1〜1.9质量%。另外,在直径为180 μ m以下的情况下,如果Ag的浓度为0.5〜1.9质量%,则在工业上可以应用低的回流焊温度因此优选,更优选的是Ag的浓度为0.5〜1.0质量%,这样的话可平衡良好地同时得到钎料合金的软质化和在低的回流焊温度下的操作这两个优点。[0038] 本申请发明者们专心研讨的结果判明:通过在本申请发明的钎料球中进一步含有

0.01~5质量%的Bi,热疲劳特性更大幅度地提高。在为低于0.01质量%的添加时得不到这样的效果,相反,在为超过5质量%的添加时,Bi容易氧化,由此钎料球的表面容易变为凹凸状,因此不优选。更优选的是将Bi的添加量设为I~5质量%,这样的话热疲劳特性的提高效果提高,最优选的是将Bi的添加量设为2~5质量%,这样的话热疲劳特性的提闻效果极闻,因此优选。

[0039] 再者,该现象是含有总计为0.0001~0.005质量%的Mg、Al或Zn之中的I种或2种以上的钎料球所固有的现象,即使在不满足该组成范围的钎料球中添加0.01~5质量%的Bi,也得不到大幅度的热疲劳特性的提高。其原因是由于B1、与Mg、Al或Zn之间的相互作用所致,通过Mg、Al和Zn的适当浓度的添加可在钎料表面形成非晶层,与其相伴Bi的过剩的氧化被抑制,其结果,添加的Bi的大部分在构成钎料的Sn中固溶,由此钎料的机械特性被有效地强化(固溶强化)。另一方面,如果Mg、Al或Zn的浓度低于上述的范围,则在钎料表面难以形成非晶层,添加的Bi的大部分容易被氧化,由此难以预见固溶强化。另外,如果Mg、Al或Zn的浓度高于0.005质量%,则如上述那样,Mg、Al或Zn激烈地氧化,球不成为球状而成为多角形状,因此即使尝试安装也不能够形成适当的形状的钎料凸块,热疲劳特性变得恶劣,因此不优选。

[0040] 如上述那样,为了即使无意中落下电子设备也不发生故障,对钎料球还要求确保耐落下性。一般地,耐落下性大多是将试片放置在试片设置台后,反复使其从30~10cm的高度落下,确认每次进行落下时各钎焊接合部的电阻的变化由此进行评价。耐落下性,可以通过使钎料球中进一步含有总计为0.0005~0.5质量%的N1、P、Sb、Ce、La、Co、Fe和In之中的至少I种来确保。如果在钎料球中含有这些元素,则阻碍Sn和构成电极的元素之间的扩散,其结果,可得到减薄在接合界面的金属间化合物相的厚度的效果。由于金属间化合物相的厚度薄,即使无意中落下电子设备时的冲击传递到接合界面,也可以抑制龟裂的发生和进展。但是,在含量低于0.0005质量%时,不能充分地得到上述的效果。另一方面,如果含量超过0.5质量%则钎料球的熔点急剧地上升,因此在工业上不优选。

[0041] 鉴定钎料球中的组成的方法没有特别限制,例如EDX、电子探针分析法(ΕΡΜΑ;Electron Probe Micro Analyzer)、AES、二次离子质谱分析法(SIMS !Secondary1n-microprobe Mass Spectrometer)、感应稱合等离子体分析法(ICP ;Inductive CoupledPlasma)、辉光放电质谱分析法(GD-MASS ;Glow Discharge Mass Spectrometry)、突光X射线分析法(XRF ;X-ray Fluorescence Spectrometer)等实绩也丰富且精度也高,因此优选。

[0042] 制造上述钎料球的方法,可以利用将调合了添加元素使得合乎规定的浓度的钎料母合金在坩埚或铸模中加热熔化由此均匀化,然后使其凝固的方法。但是,根据熔融钎料母合金时的气氛,添加的元素氧化,会发生在钎料中不含有的不良。在此,在熔融钎料母合金的工序中,例如,如果利用将钎料周边的气氛设为氧分压为0.1~10Pa的气氛的方法、设为0.1~101300Pa的低压的非氧化气氛的方法,则可以抑制钎料球中的添加元素的氧化,其结果,可以使钎料合金中切实地含有添加元素。作为非氧化气氛,可以利用例如氮、氩、氖之类的惰性气体、或者如CO、氢那样具有还原作用的气体等。其原因是由于若使用这些气氛则钎料合金中的氧被脱除。但是,如果特定的氧分压气氛或非氧化气氛的压力低于0.1Pa,则钎料中的微量添加元素成为蒸气从钎料中脱出,钎料球中的添加元素的浓度产生偏差。相反地,如果是氧分压高于10Pa的压力,则在气氛中会残存相当量的氧,因此得不到上述的效果。另外,101300Pa的压力是平均大气压,因此如果非氧化气氛的压力超过101300Pa,则非氧化气氛漏出到坩埚之外的危险性增加。在熔融上述钎料母合金的工序中,例如,利用通过密封可以将内部从外部气体隔绝的铸模由于实绩也丰富因此优选。

[0043] 另外,为了在钎料球的表面形成以O和Sn为主体的非晶相,重要的是在制造钎料球的过程中,极力加快将熔融时的钎料合金凝固使其球化时的冷却速度。具体地讲,将冷却速度设为100°c /秒以上即可,更优选的是设为300°C /秒以上,若这样的话则上述非晶相可以较厚且稳定地形成,因此优选。为了达到该冷却速度,在冷却过程中对凝固中的钎料合金喷吹冷气因简便而优选,但也可以利用将凝固中的钎料合金投入水中由此水冷的方法。但是,如果设为超过800°C /秒的冷却速度,则可以形成超过50nm的非晶相,但该情况下需要大量的冷气,因此成为成本高的主要原因,在工业上不优选。

[0044] 本发明的钎料球的形状不特别规定,将球状的钎料合金向接合部转印形成为突起状,或进而将该突起物安装于别的电极由于实绩也丰富因此在工业上优选。

[0045] 本发明的钎料球,除了上述BGA以外,在作为具有被称为CSP (芯片尺寸封装,ChipScale Package)、或者FC (倒装片,Flip Chip)的安装形态的半导体器件的连接端子使用的情况下也可以体现效果。在将本实施方式的钎料球作为这些半导体器件的连接端子使用的情况下,例如,预先在印刷配线基板上的电极上涂布钎剂和/或钎料膏这样的有机物后,在电极上排列钎料球,采用上述的回流焊法形成牢固的钎焊接合部,由此可以形成为电子部件。

[0046] 本实施方式的电子部件,也包括在这些BGA、CSP、FC上安装了本实施方式的钎料球的原样的状态的电子部件,还包括预先在印刷配线基板上的电极上涂布钎剂和/或钎料膏后将电子部件放在电极上,采用上述的回流焊法牢固地钎焊由此将电子部件进一步安装于印刷基板的状态的电子部件。另外,也可以替代该印刷基板,使用被称为TAB(带式自动结合,Tape Automated Bonding)带的柔性配线带、被称为引线框的金属制配线。

[0047] 以上,表示了本发明的优选例,但本申请发明针对最近变得显著的下述的课题,通过适当变形也能够解决该课题。

[0048] 第一点的课题是关于多次回流焊的课题。钎料的强度,比起作为母相的Sn,在钎料中析出的粒状合金相的贡献较大,如果细的粒状合金相较多地存在则强度变高。但是,该粒状合金相不耐热,例如如果实施多次的回流焊,则通过数次暴露在超过熔融温度的高温环境中,粒状合金相粗大化,数量也减少。在钎料球的直径为300 μ m左右时不视为特别的问题,但在钎料球的直径为250μπι以下时,如果实施多次的回流焊,则由于上述的原因,钎料不能够确保需要的强度,如果附加应力则钎料过剩地变形,在最坏的情况下发生短路、断线。

[0049] 为了解决该不良情况,在本申请发明中优选同时地添加Mg和Ni。这是因为通过Mg和Ni的同时添加,即使在实施了多次的回流焊时也可以使钎料中的粗大的Cu6Sn5变微细,由此即使Ag3Sn因多次回流焊而粗大化、存在于钎料中的微细的粒状合金相的总数减少,也可通过上述的微细的Cu6Sn5补充其减少量来得到析出硬化的效果,可以防止钎料球的强度降低。其详细的原因尚不清楚,但认为在Ni置换粗大的Cu6Sn5中的Cu,形成微细的(Cu,ND6Sn5时,Mg发挥如催化剂那样的作用,帮助上述置换。再者,不添加Mg而仅添加Ni时不能充分地看到这样的效果。

[0050] 第二点的课题是关于电极的剥离的课题。最近,电极的结构开始从以往的Cu电极和Cu/Ni/Au电极变化为Cu/Ni/Pd/Au电极之类。即使使用这样的电极,在I~2次的回流焊时钎料和电极之间的扩散也不怎么进行,因此可以避免在钎料/电极界面层状地生长脆性的合金相,但如果实施多次的回流焊,则不能够忽视上述扩散的影响,由于在钎料/电极界面层状地生长合金相,在电极中发生剥离,在最坏的情况下发生短路、断线。该倾向特别是在使用Cu/Ni/Pd/Au电极时可频繁地看到。

[0051] 为了抑制这样的电极中的剥离,抑制在钎料/电极界面的脆性的合金相的层状的生长即可,但在本申请发明中,若同时地添加Mg和Ni,则在钎料/电极界面的相互扩散变慢,可以减薄脆性的合金相的厚度,并且其形状也可以变得平滑,因此优选。再者,虽然在Ni的单独添加下也可看到这样的效果,但未必充分,为了切实地减薄脆性的合金相的厚度,优选如上述那样同时添加Mg和Ni。认为其原因是因为,在Ni因显示作为在钎料/电极界面的相互扩散的障碍的功能而减慢相互扩散时,Mg起到如催化剂那样的作用,可以予以帮助使得能够更加切实地实施Ni的作为扩散障碍的功能。

[0052] 实施例

[0053] 将向主成分中加入了本实施方式的添加元素的原料设置在石墨坩埚内之后,用高频熔化炉加热、熔化,通过冷却,得到了钎料合金。再者,采用燃烧法测定在原料Sn中含有的氧浓度,将其浓度示于表1、2。加热温度设为300°C。其后,将钎料合金制成为线径20 μ m的线材。按长度26.1mm、和9.72mm切断线材,形成为一定体积后再次用高频熔化炉加热、熔化,通过冷却,分别得到了直径为250 μ m以及180 μ m的钎料球。再加热温度设为350°C。此时,高频熔化炉内的气氛设为氮气,其氧分压设为约lOOPa。另外,在制造钎料球时,对冷却过程的钎料喷吹冷气,加大冷却速度使其为300°C /秒。通过ICP分析来鉴定各钎料球的组成,将它们的值示于表1~5。各钎料球的熔点,采用差示扫描量热测定(DSC5DifTerentialScanning Calorimetry)计测定,将其值示于表1~5。非晶相的鉴定,采用TEM和EDX进行,将在非晶相中鉴定出的元素示于表1、2。另外,非晶相和全体氧化锡的厚度采用TEM测定,此外,算出全体氧化锡中的非晶氧化锡的占有率。将其值示于表1、2。另外,使用FE-SEM和EDX以5万倍的倍率观察钎料球表面的氧化的程度。此时,如果钎料球的表面变形为多角形状则记为X、仅观察到一点点的这样的变形则记为Λ、完全观察不到这样的变形则记为〇,将这些符号不于表1、2。

[0054] 作为安装钎料球的印刷基板,使用40mmX 30mmX Imm尺寸、电极为0.3mm间距、电极表面为Cu电极这样的规格的基板。在基板上涂布水溶性钎剂后搭载钎料球,通过在峰值温度保持在250°C的回流焊炉内加热、冷却,在上述印刷基板上形成了钎料凸块。再在该凸块上采用同样的方法接合半导体器件,得到了印刷基板/钎料凸块/半导体器件这一构成的电子部件。再者,上述半导体器件为8mm见方,324个管脚,电极是Cu。

[0055] 此外,在上述试片之中的数个水平下,得到了印刷基板/钎料凸块这一构成的电子部件后,再反复进行4次的在回流焊炉内加热、冷却的操作。进行了该试验的试片重新示于表6。另外,限于该试验,也利用Cu/Ni/Au电极和Cu/Ni/Pd/Au电极进行了同样的试验。

[0056] 热疲劳特性利用TCT试验(温度循环试验;Thermal Cycle Test)评价。此时,在-40°C至+125°C之间多次改变试片的环境温度,每25次从TCT试验装置内取出试片,进行导通试验的结果,若电阻值超过了初始值的2倍则视为发生了不良。将初次发生了不良的次数作为TCT寿命示于表1、2。在直径250 μ m下的热疲劳特性,如果初次发生了不良的次数为500次以上则为良好,在直径180μπι下的热疲劳特性,如果初次发生了不良的次数为300次以上则为良好。

[0057] 耐落下性,采用基于JEDEC(半导体技术协会;Solid State TechnologyAssociat1n)标准的JESD22-B111的试验法来评价。此时,每次落下都确认试片的导通性,若导通超过了初始值的2倍则设为发生了不良。将初次发生了不良的次数作为耐落下冲击寿命不于表4、5。

[0058] 撕扯强度(pull strength)的测定,仅利用进行了上述的多次的回流焊试验的试片实施。此时,使用市售的撕扯强度测定机(Dage2400PC),将试验速度设为300μπι/秒、试片手持部的关闭压力设为lOPsi,进行撕扯试验,将测定中的保持时间(2秒)经过为止的最大撕扯强度进行50点平均,由此求得撕扯强度值,将其值示于表6。在直径250 μ m下的多次的回流焊试验后的撕扯强度若为4000mN以上则判为合格。

[0059] 另外,利用光学显微镜观察50点的撕扯试验后的剥离界面,电极材质和/或基底观察到5点以上则记为X、观察到4点以下则看作在使用上没有特别的问题的水平、记为Λ,完全观察不到则记为〇,将这些符号一并记载于表6中的「剥离界面」栏。 [0060] 在直径250 μ m下的热疲劳特性见下表。

[0061]

Figure CN102666002BD00121
Figure CN102666002BD00131

[0063] 直径180 u m时的热疲劳特性见下表。

[0064]

Figure CN102666002BD00141
Figure CN102666002BD00151
Figure CN102666002BD00161

[0069] 在直径250 μ m下的耐落下性见下表。

[0070]

Figure CN102666002BD00171
Figure CN102666002BD00181
Figure CN102666002BD00191
Figure CN102666002BD00201

[0075] 在直径250 u m下的多次的回流焊试验后的撕扯强度和剥离的有无见下表。 表6

Figure CN102666002BD00211

[0078] 如表1所示,根据本实施方式,即使是直径250 μ m的小直径的钎料球,也可得到500次以上的良好的热疲劳特性。

[0079] 另外,如表2所示,根据本实施方式,即使是直径180 μ m的小直径的钎料球,也可得到300次以上的良好的热疲劳特性。

[0080] 另外,如表3所示,根据本实施方式,即使是直径250 μ m的小直径的钎料球,也可得到675次以上的良好的热疲劳特性。

[0081] 同样,如表4所示,根据本实施方式,即使是直径250 μ m的小直径的钎料球,也可一并得到90次以上的良好的耐落下性。

[0082] 另外,如表5所示,根据本实施方式,即使是直径180 μ m的小直径的钎料球,也可一并得到90次以上的良好的耐落下性。

[0083] 另外,如表6所示,根据同时地添加Ni和Mg的本实施方式,即使进行多次回流焊试验,也可得到良好的撕扯强度和剥离界面。

Claims (11)

1.一种半导体安装用钎料球,其特征在于,是采用钎料合金形成的半导体安装用钎料球,所述钎料合金以Sn为主体,含有0.1~2.5质量^^^Ag、0.1~1.5质量%的Cu、以及总计为0.0OOl~0.005质量%的Mg、Al和Zn之中的I种或2种以上, 在该钎料球的表面具有I~50nm的厚度的非晶相, 所述非晶相含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn。
2.根据权利要求1所述的半导体安装用钎料球,其特征在于,所述钎料合金的Ag浓度为0.5~1.9质量%。
3.根据权利要求1所述的半导体安装用钎料球,其特征在于,所述钎料合金还含有0.01~5质量%的Bi。
4.根据权利要求2所述的半导体安装用钎料球,其特征在于,所述钎料合金还含有0.01~5质量%的Bi。
5.根据权利要求1~4的任一项所述的半导体安装用钎料球,其特征在于,所述钎料合金还含有总计为0.0005~0.5质量%的N1、P、Sb、Ce、La、Co、Fe和In之中的I种或2种以上。
6.一种半导体安装用钎料球,其特征在于,是采用钎料合金形成的半导体安装用钎料球,所述钎料球以Sn为主体,含有0.1~1.9质量%的八8、0.1~1.0质量%的Cu、以及总计为0.0001~0.005质量%的Mg、Al和Zn之中的I种或2种以上, 在该钎料球的 表面具有I~50nm的厚度的非晶相, 所述非晶相含有Mg、Al和Zn之中的I种或2种以上、以及O和Sn。
7.根据权利要求6所述的半导体安装用钎料球,其特征在于,所述钎料合金的Ag浓度为0.5~1.9质量%。
8.根据权利要求6所述的半导体安装用钎料球,其特征在于,所述钎料合金还含有0.01~5质量%的Bi。
9.根据权利要求7所述的半导体安装用钎料球,其特征在于,所述钎料合金还含有0.01~5质量%的Bi。
10.根据权利要求6~9的任一项所述的半导体安装用钎料球,其特征在于,所述钎料合金还含有总计为0.0005~0.5质量%的祖4、Sb、Ce、La、Co、Fe和In之中的I种或2种以上。
11.一种电子部件,是具有钎焊接合部的电子部件,其特征在于,在该钎焊接合部的至少一部分中使用了权利要求1~10的任一项所述的半导体安装用钎料球。
CN201180004305.4A 2010-08-18 2011-08-04 半导体安装用钎料球和电子部件 CN102666002B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP182934/2010 2010-08-18
JP2010182934 2010-08-18
PCT/JP2011/067851 WO2012023440A1 (ja) 2010-08-18 2011-08-04 半導体実装用半田ボール及び電子部材

Publications (2)

Publication Number Publication Date
CN102666002A CN102666002A (zh) 2012-09-12
CN102666002B true CN102666002B (zh) 2014-09-10

Family

ID=45605096

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180004305.4A CN102666002B (zh) 2010-08-18 2011-08-04 半导体安装用钎料球和电子部件

Country Status (5)

Country Link
US (1) US9024442B2 (zh)
JP (1) JP5413926B2 (zh)
KR (1) KR101355694B1 (zh)
CN (1) CN102666002B (zh)
WO (1) WO2012023440A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5568026B2 (ja) * 2011-01-20 2014-08-06 トヨタ自動車株式会社 ろう付け方法及びろう付け構造
CN103084749B (zh) * 2013-01-18 2015-08-19 江苏师范大学 一种高使用寿命的无铅钎料
US20140302342A1 (en) * 2013-04-04 2014-10-09 Hitachi Metals, Ltd. Copper wire and method of manufacturing the same
US9320152B2 (en) * 2013-05-29 2016-04-19 Nippon Steel & Sumikin Materials Co., Ltd. Solder ball and electronic member
JP6387522B2 (ja) * 2014-12-03 2018-09-12 パナソニックIpマネジメント株式会社 実装構造体
JP6060199B2 (ja) * 2015-03-24 2017-01-11 ハリマ化成株式会社 はんだ合金、ソルダペーストおよび電子回路基板
CA2992401A1 (en) * 2015-07-24 2017-02-02 Harima Chemicals, Incorporated Solder alloy, solder paste, and electronic circuit board
JP6082952B1 (ja) * 2016-07-04 2017-02-22 株式会社弘輝 はんだ合金、ヤニ入りはんだ
CN106271177B (zh) * 2016-09-23 2018-10-26 哈尔滨工业大学深圳研究生院 一种互连钎料及其互连成形方法
KR101904884B1 (ko) * 2016-10-27 2018-10-10 덕산하이메탈(주) 솔더볼 및 이를 이용한 반도체 패키지
CN106517316B (zh) * 2016-10-31 2018-07-10 华南理工大学 采用电-热耦合场加载制备多形态微纳米二氧化锡的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1555961A (zh) * 2004-01-10 2004-12-22 大连理工大学 一种复合钎料球及其制备方法
JP2005254298A (ja) * 2004-03-12 2005-09-22 Nippon Steel Corp 半導体実装用半田合金とその製造方法、及び半田ボール、電子部材
WO2006011204A1 (ja) * 2004-07-29 2006-02-02 Senju Metal Industry Co., Ltd 鉛フリーはんだ合金
WO2009051240A1 (ja) * 2007-10-17 2009-04-23 Ishikawa Metal, Co., Ltd. 鉛フリーはんだ
JP2009248156A (ja) * 2008-04-08 2009-10-29 Hitachi Metals Ltd Solder balls, solder layers, solder bumps and methods for forming them

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3772697B2 (ja) 2001-06-15 2006-05-10 千住金属工業株式会社 鉛フリーはんだボールおよびその製造方法
US20030021718A1 (en) 2001-06-28 2003-01-30 Osamu Munekata Lead-free solder alloy
US8691143B2 (en) * 2005-06-03 2014-04-08 Senju Metal Industry Co., Ltd. Lead-free solder alloy
CN101410541B (zh) * 2006-12-25 2011-11-16 新日本制铁株式会社 可切削性和强度特性优异的机械结构用钢
JP4968381B2 (ja) * 2008-04-23 2012-07-04 千住金属工業株式会社 鉛フリーはんだ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1555961A (zh) * 2004-01-10 2004-12-22 大连理工大学 一种复合钎料球及其制备方法
JP2005254298A (ja) * 2004-03-12 2005-09-22 Nippon Steel Corp 半導体実装用半田合金とその製造方法、及び半田ボール、電子部材
WO2006011204A1 (ja) * 2004-07-29 2006-02-02 Senju Metal Industry Co., Ltd 鉛フリーはんだ合金
WO2009051240A1 (ja) * 2007-10-17 2009-04-23 Ishikawa Metal, Co., Ltd. 鉛フリーはんだ
JP2009248156A (ja) * 2008-04-08 2009-10-29 Hitachi Metals Ltd Solder balls, solder layers, solder bumps and methods for forming them

Also Published As

Publication number Publication date
US20120223430A1 (en) 2012-09-06
US9024442B2 (en) 2015-05-05
JP5413926B2 (ja) 2014-02-12
CN102666002A (zh) 2012-09-12
KR20120063531A (ko) 2012-06-15
JPWO2012023440A1 (ja) 2013-10-28
WO2012023440A1 (ja) 2012-02-23
KR101355694B1 (ko) 2014-01-28

Similar Documents

Publication Publication Date Title
Zeng et al. Development of high-temperature solders
Alam et al. Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn–Ag solder and Au/electroless Ni (P)/Cu bond pad
CN103962744B (zh) 焊锡材料及电子部件接合体
EP2883649B1 (en) High-temperature lead-free solder alloy
US7800230B2 (en) Solder preform and electronic component
US9221131B2 (en) Solder alloy
KR101707244B1 (ko) 반도체용 본딩 와이어
US5514912A (en) Method for connecting semiconductor material and semiconductor device used in connecting method
EP1889684B1 (en) Lead-free solder alloy
US8097960B2 (en) Semiconductor mounting bonding wire
ES2606374T3 (es) Componente semiconductor y método para producir un contacto semiconductor de metal
TWI273140B (en) Phase change lead-free super plastic solders
JP4349641B1 (ja) ボールボンディング用被覆銅ワイヤ
CN100509257C (zh) 一种无铅焊球用于生产焊锡凸起的用途以及焊锡凸起
EP0435009B1 (en) Semiconductor package connecting method and semiconductor package connecting wires
JP5572121B2 (ja) ボンディングワイヤの接合構造
TWI304006B (en) Tin/indium lead-free solders for low stress chip attachment
JP5616739B2 (ja) 複層銅ボンディングワイヤの接合構造
Uno et al. Surface-enhanced copper bonding wire for LSI
US8610291B2 (en) Copper alloy bonding wire for semiconductor device
JP5399581B1 (ja) 高速信号用ボンディングワイヤ
US20170323865A1 (en) Chip arrangements
KR100899322B1 (ko) Au 합금 본딩·와이어
KR20020061528A (ko) 반도체장치, 반도체장치의 제조방법 및 반도체장치의제조장치
US8598707B2 (en) Solder alloy and semiconductor device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
ASS Succession or assignment of patent right

Owner name: NIPPON STEEL + SUMIKIN HI-TECH MATERIAL CO., LTD.

Free format text: FORMER OWNER: NIPPON STEEL MATERIALS CO., LTD.

Effective date: 20121227

Owner name: NIPPON STEEL SUMIKIN NEW MATERIALS CO., LTD.

Free format text: FORMER OWNER: NIPPON STEEL NEW MATERIALS CO., LTD.

Effective date: 20121227

TA01 Transfer of patent application right

Effective date of registration: 20121227

Address after: Tokyo, Japan, Japan

Applicant after: Kanae Co Ltd

Applicant after: NIPPON MICROMETAL CORPORATION

Address before: Tokyo, Japan, Japan

Applicant before: Nippon Steel Materials Co., Ltd.

Applicant before: Nippon Micrometal Corp.

C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190604

Address after: Tokyo, Japan, Japan

Co-patentee after: NIPPON MICROMETAL CORPORATION

Patentee after: Nippon Iron Chemical Materials Co., Ltd.

Address before: Tokyo, Japan, Japan

Co-patentee before: NIPPON MICROMETAL CORPORATION

Patentee before: Kanae Co Ltd

CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan, Japan

Co-patentee after: Nippon Micrometal Corp.

Patentee after: Nippon Iron Chemical Materials Co., Ltd.

Address before: Tokyo, Japan, Japan

Co-patentee before: NIPPON MICROMETAL CORPORATION

Patentee before: Nippon Iron Chemical Materials Co., Ltd.

CP01 Change in the name or title of a patent holder