CN102655178A - Cover plate, manufacturing method of cover plate, solar glass and photovoltaic device - Google Patents
Cover plate, manufacturing method of cover plate, solar glass and photovoltaic device Download PDFInfo
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- CN102655178A CN102655178A CN2012101351824A CN201210135182A CN102655178A CN 102655178 A CN102655178 A CN 102655178A CN 2012101351824 A CN2012101351824 A CN 2012101351824A CN 201210135182 A CN201210135182 A CN 201210135182A CN 102655178 A CN102655178 A CN 102655178A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 76
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 72
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 38
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 16
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 16
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a cover plate, a manufacturing method of the cover plate, solar glass and a photovoltaic device. The cover plate is suitable for covering a work device, and the work device forms an electric field on the cover plate. The cover plate comprises a light-transmitting matrix, a barrier layer and an anti-reflex layer, wherein the light-transmitting matrix is provided with a first surface and a second surface which are opposite to each other, and the first surface is adjacent to and connected with the work device; the barrier layer is positioned on the first surface of the light-transmitting matrix and is used for preventing substances in the light-transmitting matrix from escaping under the action of the electric field so as to inhibit the performance degradation of the work device; and the anti-reflex layer is positioned on the second surface of the light-transmitting substrate and is used for reducing the reflection of incident light on the second surface of the light-transmitting substrate. The barrier layer is positioned on the first surface adjacent to the work device and can be used for preventing the substances in the light-transmitting substrate from escaping from the first surface under the action the electric field, thereby preventing the substances in the light-transmitting matrix from entering into the work device, and inhibiting the performance degradation, caused by the substances in the light-transmitting matrix, of the work device.
Description
Technical field
The present invention relates to the optical material field, relate in particular to a kind of cover plate and manufacturing approach thereof, solar energy glass, photovoltaic device.
Background technology
That glass has is transparent, intensity is high, air-locked characteristics, in surroundings, is chemical inertness, also can not work with biology, so purposes is very extensive.Common glass comprises vehicle glass, plate glass, insulation glass etc.
Glass also is applied in the photovoltaic device, as the cover plate of solar cell in the photovoltaic device.With reference to figure 1, show the sketch map of prior art photovoltaic device one embodiment.Said photovoltaic device comprises: substrate 11; Be positioned at the adhesive layer 12 in the substrate 11, also be provided with a plurality of solar cells 13 in the said adhesive layer 12, solar cell described in the present embodiment 13 is a crystal silicon battery; Cover-plate glass 14.Said substrate 11, adhesive layer 12 and cover-plate glass 14 constitute the solar cell sandwich constructions.
During photovoltaic device work, light is projected to cover-plate glass 14, sees through said cover-plate glass 14 afterwards and arrives adhesive layer 12, and the solar cell 13 that is in the adhesive layer 12 is an electric energy with the transform light energy that receives, to realize the function of photovoltaic device.After solar cell 13 converted light into the signal of telecommunication, said solar cell 13 can accumulate a large amount of negative electrical charges, and said solar cell 13 is negative potential.
For safe in utilization, said photovoltaic device also is provided with the frame 15 that is coated on solar cell sandwich construction end, and said frame 15 links to each other with the ground end, and perhaps said frame 15 links to each other with the supply voltage of a low potential.Like this, the people touches frame 15 and Danger Electric shock risk can not take place when the said photovoltaic device of contact.
In the use of photovoltaic device; There is electrical potential difference between frame 15 and the solar cell 13; Said electrical potential difference can cause the generation of leakage current, finally cause photovoltaic device power attenuation (Potential Induced Degradation, PID); Influence the performance of photovoltaic device, how reducing PID is the focus that those skilled in the art study.
In " 26th European Photovoltaic Solar Energy Conference and Exhibition; 5-8Setember 2011; Hamburg; Germany ", people such as Simon Koch have delivered the article of " POLARIZATION EFFECTS AND TESTS FOR CRYSTALLINE SILICON CELLS " by name, and people such as Simon Koch think that the metal cations such as alkali metal ion in the cover-plate glass are one of inducements that causes the PID problem.
Below in conjunction with reference to figure 1, explain that metal cation in the cover-plate glass causes the reason of PID problem.In photovoltaic device, said cover-plate glass 14 adopts soda-lime glass usually, comprises multiple metal cation in the soda-lime glass, for example Na
+Deng alkali metal ion, Ca
2+Deng alkaline-earth metal ions and Fe
3+Wait other metal cations.Link to each other owing to frame 15 ground connection or with the supply voltage of a low potential; And said solar cell 13 is negative potential; The electromotive force of said frame 15 is higher than the electromotive force of said solar cell 13, is therefore forming the electric field (as in Fig. 1 arrow shown in direction) of direction from frame 15 to solar cell 13 in the photovoltaic device.In said cover-plate glass 14, the direction of said electric field from top to bottom.
Metal cation in the soda-lime glass can be towards solar cell 13 motions under said effect of electric field from top to bottom.Said metal cation is moved to the surface of solar cell 13 or is got into solar cell 13 inside, will cause solar cell 13 performance decrease, thereby cause the PID problem, and then cause the decline of Photovoltaic Device Performance.
Summary of the invention
The technical problem that the present invention solves is to prevent or delay the decreased performance such as the device work of photovoltaic device etc.
In order to address the above problem, the present invention provides a kind of cover plate, is suitable for covering device work; Said device work is formed with electric field at cover plate; Said cover plate comprises: light-transmission substrate, and said light-transmission substrate has opposite first and second surface, and said first surface is adjacent to said device work; The barrier layer is positioned at the first surface of said light-transmission substrate, is used to stop that material is overflowed because of said electric field action in the said light-transmission substrate, to suppress the performance degradation of said device work; Anti-reflecting layer is positioned at the second surface of said light-transmission substrate, is used to reduce reflection of incident light on the light-transmission substrate second surface.
Alternatively, said barrier layer is the printing opacity insulating material.
Alternatively, the light transmission rate on said barrier layer is more than or equal to 90%.
Alternatively, the material on said barrier layer is a silicon dioxide, and perhaps, the material on said barrier layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
Alternatively, the thickness on said barrier layer is in the scope of 20 ~ 250nm.
Alternatively, the thickness on said barrier layer is in the scope of 20 ~ 50nm.
Alternatively, the thickness on said barrier layer is 20nm, 30nm or 40nm.
Alternatively, the thickness on said barrier layer is in the scope of 50 ~ 150nm.
Alternatively, the thickness on said barrier layer is 80nm, 100nm, 120nm or 150nm.
Alternatively, the material on said barrier layer is silica-doped aluminium oxide, and the thickness on said barrier layer is 100nm.
Alternatively, said anti-reflecting layer is a single layer structure.
Alternatively, the material of said anti-reflecting layer is identical with the material on said barrier layer.Alternatively, said anti-reflecting layer is a sandwich construction, comprises the multi-layer anti-reflection film that is positioned at the light-transmission substrate second surface successively.
Alternatively, the material of said anti-reflecting layer is identical with the material on said barrier layer.
Alternatively, the material of said anti-reflecting layer is a silicon dioxide, and perhaps, the material of said anti-reflecting layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
Alternatively, said light-transmission substrate is a glass.
Alternatively, material is a metal cation in the said light-transmission substrate.
Correspondingly; The present invention also provides a kind of solar energy glass; Be assemblied in solar cell, said solar cell forms electric field in said solar energy glass position, and said solar energy glass comprises: glass; Said glass has opposite first and second surface, and said first surface is adjacent to said solar cell; The printing opacity insulating barrier; Be positioned at the first surface of said glass; The material of said printing opacity insulating barrier is a silicon dioxide, and perhaps, the material of said printing opacity insulating barrier is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide; Anti-reflecting layer is positioned at the second surface of said glass, is used to reduce reflection of incident light on the glass second surface.
Alternatively, said glass is soda-lime glass.
Correspondingly, the present invention also provides a kind of photovoltaic device, comprising: substrate is provided with solar cell in the said substrate; Be positioned at suprabasil light-transmission substrate; Be positioned at the anti-reflecting layer on the light-transmission substrate, be used to reduce reflection of light; Said photovoltaic device also comprises the barrier layer between light-transmission substrate and solar cell, is used to stop that material enters to solar cell in the said light-transmission substrate, degenerates to suppress said Solar cell performance.
Alternatively, said barrier layer is the printing opacity insulating material.
Alternatively, the light transmission rate on said barrier layer is more than or equal to 90%.
Alternatively, the material on said barrier layer is a silicon dioxide, and perhaps, the material on said barrier layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
Alternatively, the thickness on said barrier layer is in the scope of 20 ~ 250nm.
Alternatively, the thickness on said barrier layer is in the scope of 20 ~ 50nm.
Alternatively, the thickness on said barrier layer is 20nm, 30nm or 40nm.
Alternatively, the thickness on said barrier layer is in the scope of 50 ~ 150nm.
Alternatively, the thickness on said barrier layer is 80nm, 100nm, 120nm or 150nm.
Alternatively, the material on said barrier layer is silica-doped aluminium oxide, and the thickness on said barrier layer is 100nm.
Alternatively, said light-transmission substrate is a glass.
Alternatively, material is a metal cation in the said light-transmission substrate.
Alternatively, said substrate comprises substrate layer and is positioned at the adhesive layer on the substrate layer that said solar cell is arranged in the said adhesive layer.
Alternatively, said barrier layer contacts with said substrate.
Alternatively, said barrier layer contacts with said light-transmission substrate.
Alternatively, said barrier layer contacts with said adhesive layer, light-transmission substrate; The refractive index on said barrier layer equates with the refractive index of adhesive layer, and perhaps, the refractive index on said barrier layer equates with the refractive index of said light-transmission substrate, and perhaps the refractive index on said barrier layer is between the refractive index of the refractive index of adhesive layer and light-transmission substrate.
Alternatively, the refractive index on said barrier layer is in 1.2 ~ 2.2 scope.
Alternatively, the refractive index on said barrier layer is in 1.3 ~ 1.8 scope.
Alternatively, the material of said adhesive layer is one or more of ethylene-vinyl acetate copolymer or polyvinyl butyral resin.
Alternatively, said solar cell is a crystal silicon battery.
Correspondingly; The present invention provides a kind of manufacturing approach of cover plate; Said cover plate is used to cover device work, and said device work is formed with electric field in the cover plate position, and this method comprises: light-transmission substrate is provided; Said light-transmission substrate has opposite first and second surface, and said first surface is with respect to the more approaching said device work of second surface; The first surface of light-transmission substrate be formed for stopping material in the said light-transmission substrate because of said electric field action overflow, with the barrier layer of the performance degradation that suppresses said device work.
Alternatively, also comprise: form the anti-reflecting layer that reduces the incident light reflection at the second surface of said light-transmission substrate, the identical and synchronous formation of thickness on this anti-reflecting layer and said barrier layer.
Alternatively, said light-transmission substrate is a glass, and material is a metal cation in the said light-transmission substrate.
Alternatively, the material on said barrier layer is a silicon dioxide, and perhaps, the material on said barrier layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide; The step that forms the barrier layer at the first surface of light-transmission substrate comprises: the method through physical vapour deposition (PVD), magnetron sputtering, chemical vapour deposition (CVD), collosol and gel, volume to volume, spin coating, spraying, slot coated or dip-coating forms the barrier layer.
Alternatively, said anti-reflecting layer is a single layer structure, when forming the barrier layer, forms anti-reflecting layer.
Alternatively, the method through dip-coating forms barrier layer and anti-reflecting layer respectively on two surfaces of light-transmission substrate simultaneously.
Alternatively, said anti-reflecting layer is the sandwich construction that comprises the multi-layer anti-reflection film; The step that forms anti-reflecting layer at the second surface of light-transmission substrate comprises that successively the second surface at said light-transmission substrate forms the multi-layer anti-reflection film.
Alternatively, after the step that forms the barrier layer, also comprise processing is dried on said barrier layer.
Alternatively, processed steps being dried on said barrier layer comprises: the temperature with 100 ~ 300 ℃ is dried.
Alternatively, after forming the barrier layer, forming the step of anti-reflecting layer, also comprise said glass is carried out heat treated, so that said gamma transition is a toughened glass.
Compared with prior art, the present invention has the following advantages:
1. the barrier layer is positioned at the first surface adjacent with device work; Can play the effect of material because of overflowed from said first surface by electric field action in the said light-transmission substrate that stop; Thereby can prevent that material enters in the device work in the light-transmission substrate, and then can suppress degeneration by the device work performance that material caused in the said light-transmission substrate.
2. in the possibility, the material of said anti-reflecting layer is identical with the material on said barrier layer, can adopt in the same technology and form said barrier layer and anti-reflecting layer on two surfaces of light-transmission substrate simultaneously, thereby simplify manufacturing step, reduces production costs.
3. in the photovoltaic device provided by the invention, the barrier layer between light-transmission substrate and a plurality of solar cell is used to stop that material enters to solar cell because of electric field action in the said light-transmission substrate, can suppress said Solar cell performance and degenerate.
4. in the possibility, said barrier layer is used to stop that alkali metal ion arrives the position of solar cell, to prevent the corrosion of alkali metal ion to solar cell, reduces the PID problem.
5. in the possibility; Barrier layer and light-transmission substrate, the adhesive layer that is provided with a plurality of solar cells are in contact, and the refractive index on said barrier layer equates with the refractive index of adhesive layer, perhaps; The refractive index on said barrier layer equates with the refractive index of said light-transmission substrate; Perhaps the refractive index on said barrier layer can increase the light transmission rate on barrier layer between the refractive index of the refractive index of adhesive layer and light-transmission substrate, improves the light conversion efficiency of photovoltaic device.
Description of drawings
Fig. 1 is a kind of sketch map of prior art photovoltaic device;
Fig. 2 is the sketch map of cover plate one execution mode of the present invention;
Fig. 3 is the sketch map of cover plate first embodiment of the present invention;
Fig. 4 is the sketch map of cover plate second embodiment of the present invention;
Fig. 5 is the sketch map of photovoltaic device one embodiment of the present invention;
Fig. 6 is the schematic flow sheet of cover plate making method one execution mode of the present invention;
Fig. 7 is the schematic flow sheet of cover plate making method first embodiment of the present invention;
Fig. 8 is the schematic flow sheet of cover plate making method second embodiment of the present invention;
Fig. 9 is the schematic flow sheet of cover plate making method the 3rd embodiment of the present invention.
Embodiment
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes sketch map to be described in detail, and when the embodiment of the invention was detailed, for ease of explanation, said sketch map was an instance, and it should not limit the scope of the present invention's protection at this.
In order to solve prior art problems, the present invention provides a kind of cover plate, with reference to figure 2, shows the sketch map of cover plate one execution mode of the present invention.
In this execution mode, said cover plate 10 is used to be covered in the device work (figure does not show) of photovoltaic device, liquid crystal display module etc., can form electric field in the said device work course of work, and said cover plate 10 is in the said electric field.Particularly, said cover plate 10 comprises:
Light-transmission substrate 100, said light-transmission substrate 100 has opposite first and second surface, and said first surface is adjacent to said device work.Particularly; In the execution mode shown in Figure 2; When using cover plate 10, the device work of said photovoltaic device, liquid crystal display module etc. is positioned at the below of cover plate 10, and said first surface is the lower surface of light-transmission substrate 100; Said second surface is the upper surface of light-transmission substrate 100, and the lower surface of device work and said light-transmission substrate 100 is adjacent.
Below in conjunction with specific embodiment technical scheme of the present invention is further specified.
With reference to figure 3, show the sketch map of cover plate first embodiment of the present invention.Present embodiment is that example describes with the cover plate that is applied in the photovoltaic device; Said photovoltaic device comprises solar cell (figure does not show), is positioned at the cover plate 20 on the said solar cell, and said photovoltaic device in use can form the electric field of direction shown in arrow among the figure.But the present invention does not limit this, in other embodiments, can also be the device work of other types.In addition, said electric field can also be that the device outside the photovoltaic device forms, as long as said device can form electric field in cover plate 20 positions.
Said cover plate 20 comprises: light-transmission substrate 200, be positioned at the barrier layer 201 of said light-transmission substrate 200 lower surfaces, and be positioned at the anti-reflecting layer 202 of said light-transmission substrate 200 upper surfaces.
In the present embodiment, said light-transmission substrate 200 is a glass, and particularly, said light-transmission substrate 200 is a soda-lime glass, includes multiple metal cation, for example: Na
+Deng alkali metal ion, Ca
2+Deng alkaline-earth metal ions, and Fe
3+Deng other metal cations.Under the electric field action of said metal cation direction shown in the arrow in Fig. 3, in light-transmission substrate 200, can move downward.
Said barrier layer 201; Be used to stop 201 the lower surface effusion from the barrier layer under the effect of electric field of direction shown in the arrow of said metal cation; Thereby prevented said multiple metal cation from arriving the solar cell position and caused the degeneration of solar cell, and then prevented the decline of Photovoltaic Device Performance.
In the present embodiment, said barrier layer 201 is the printing opacity insulating material, and on the one hand, barrier layer 201 arrives solar cell for light transmissive material can make most of light can see through barrier layer 201, to improve light utilization efficiency; On the other hand, said barrier layer 201 can have influence on the electric property of solar cell for insulating material can prevent the introducing on barrier layer 201.Preferably, the light transmission rate on said barrier layer 201 is more than or equal to 90%.Particularly, the material on said barrier layer 201 is a silicon dioxide, and perhaps, the material on said barrier layer 201 is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
The thickness on said barrier layer 201 is usually in the scope of 20 ~ 250nm.The excessive increase that causes cost easily of the thickness on barrier layer 201 can make the blocking effect on barrier layer 201 be affected when said barrier layer 201 thickness are too small simultaneously.Therefore preferably, the thickness on said barrier layer 201 is in the scope of 50 ~ 150nm.Yet (for example: when chemical vapour deposition (CVD)) forming barrier layer 201, the thickness on said barrier layer 201 is in the scope of 20 ~ 50nm for some process.The barrier layer 201 of thickness range still can be played and stopped alkali metal ion, alkaline-earth metal ions like this, and Fe
3+Wait the effect of other metal cations, can play the effect that solar cell properties is degenerated that suppresses.
Need to prove, prove, the best results when thickness on barrier layer 201 is 20nm, 30nm, 40nm, 80nm, 100nm, 120nm or 150nm based on a large amount of experiment tests.Also has good blocking effect when certainly, the thickness on barrier layer 201 is positioned at 20 ~ 30nm, 30 ~ 40nm, 40 ~ 80nm, 80 ~ 100nm, 100 ~ 120nm or 120 ~ 150nm scope.
As shown in Figure 3, in the present embodiment, said anti-reflecting layer 202 is a single layer structure.
Preferably, said anti-reflecting layer 202 can also play the effect that stops alkali metal ion, alkaline-earth metal ions and other metal cations.For example, the alkali metal ion in the glass, alkaline-earth metal ions and other metal cations are owing to the reason of thermal diffusion is overflowed from the upper surface of glass easily.Said anti-reflecting layer 202 can play the effect that stops that alkali metal ion is overflowed when reducing the light reflection.
Particularly, the material of said anti-reflecting layer 202 is a silicon dioxide, and perhaps, the material of said anti-reflecting layer 202 is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
Need to prove that preferably, the material of said anti-reflecting layer 202 is identical with the material on said barrier layer 201, like this, can reduce the quantity of material therefor on the one hand, reduce material cost; Can also adopt on the other hand in the same technology and form said barrier layer 201 and anti-reflecting layer 202 on two surfaces of light-transmission substrate 200 simultaneously, thereby simplify manufacturing step.
With reference to figure 4, show the sketch map of cover plate second embodiment of the present invention.Present embodiment is that example describes with the cover plate that is applied in the photovoltaic device still.
Present embodiment cover plate 30 comprises light-transmission substrate 300, is positioned at the barrier layer 301 of said light-transmission substrate 300 lower surfaces, is positioned at the anti-reflecting layer 302 of said light-transmission substrate 300 upper surfaces.Wherein, said light-transmission substrate 300 is a glass, comprise alkali metal ion, but the present invention does not limit to this.
The part that is basically the same as those in the first embodiment present embodiment repeats no more; The difference of the present embodiment and first embodiment is; Said anti-reflecting layer 302 is a sandwich construction, comprises the multi-layer anti-reflection film L1, L2, the L3 that are positioned at successively on light-transmission substrate 300 upper surfaces ... Ln.
Particularly, take anti-reflection film L1, L2, L3 into consideration ... Ln anti-reflection effect and light transmission rate, preferably, the thickness of individual layer anti-reflection film is positioned at the scope of 40 ~ 160nm.Best results when wherein, the thickness of individual layer anti-reflection film is 50nm, 80nm, 100nm, 120nm.Good anti-reflection effect and higher light transmission rate are also arranged when certainly, the thickness of individual layer anti-reflection film is positioned at the scope of 40 ~ 50nm, 50 ~ 80nm, 80 ~ 100nm, 100 ~ 120nm or 120 ~ 160nm.
Particularly; Said anti-reflection film L1, L2, L3 ... The material of Ln is a silicon dioxide; Perhaps, said anti-reflection film L1, L2, L3 ... The material of Ln is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
Need to prove; In the above-described embodiments, the present invention is an example with the cover plate that is applied in the solar cell all, but the present invention does not limit this; Can also be the cover plate that is applied in other device works in other embodiments, for example be applied to the cover plate in the liquid crystal display module.As long as said device work can form electric field at the cover plate place.Need to prove that also in the above-described embodiments, light-transmission substrate is example with glass, material is example with the metal cation in the light-transmission substrate, but the present invention does not limit this, can also be the light-transmission substrate of other material, for example transparent plastic.Material can also be anion, charged group bunch etc. in the light-transmission substrate, as long as material can move and overflows to the device work direction because of effect of electric field in the light-transmission substrate.Those skilled in the art can correspondingly revise, be out of shape or replace the present invention based on the foregoing description.
Correspondingly, the present invention also provides a kind of solar energy glass, and said solar energy glass is assemblied in the photovoltaic device, and said photovoltaic device in use can form electric field, and said solar energy glass is in the said electric field, and particularly, said solar energy glass comprises:
Glass, the said glass cation that belongs to covered with gold leaf, said glass has opposite first and second surface, and said first surface is adjacent to said solar cell, and particularly, said glass is soda-lime glass.
The printing opacity insulating barrier; Be positioned at the first surface of said glass; Be used to stop the first surface effusion from glass under said electric field action of the interior metal cation of said glass; Thereby prevent of the corrosion of said metal cation, and then suppressed the Solar cell performance that said metal cation caused and degenerated solar cell.
Anti-reflecting layer is positioned at the second surface of said glass, is used to reduce reflection of incident light on the glass second surface.
Particularly, the material of said printing opacity insulating barrier is a silicon dioxide, and perhaps, the material of said printing opacity insulating barrier is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
Correspondingly, the present invention also provides a kind of photovoltaic device, with reference to figure 5, shows the sketch map of photovoltaic device one embodiment of the present invention.
Said photovoltaic device comprises: substrate layer 401; Be positioned at the adhesive layer 402 on the substrate layer 401, be provided with a plurality of solar cells 403 in the said adhesive layer 402; Be positioned at the light-transmission substrate 406 on the adhesive layer 402; Be positioned at the anti-reflecting layer 407 on the light-transmission substrate 406; Barrier layer 405 between said light-transmission substrate 406 and said a plurality of solar cell 403; Said substrate layer 401, adhesive layer 402, barrier layer 405, light-transmission substrate 406 and anti-reflecting layer 407 constitute the solar cell sandwich constructions, and said photovoltaic device also comprises the frame 404 that is assemblied in said solar cell sandwich construction end.Wherein,
Need to prove; In the present embodiment, said substrate layer 401 constitutes substrate with the adhesive layer that is built-in with a plurality of solar cells 402, but the present invention does not limit this; In other embodiments, said substrate can also be for being built-in with the single layer structure of solar cell.
In the present embodiment, in order to improve light utilization efficiency, the material of said adhesive layer 402 is the adhesive of printing opacity.Particularly, the material of said adhesive layer 402 is one or more of ethylene-vinyl acetate copolymer (EVA) or polyvinyl butyral resin (PVB).But the present invention does not limit the material of adhesive layer 402.
Said light-transmission substrate 406 is used to protect solar cell 403, also plays the effect that makes transmittance to solar cell 403.In the present embodiment, said light-transmission substrate 406 is a glass, and particularly, said light-transmission substrate 406 is a soda-lime glass, comprises multiple metal cation, for example: Na
+Deng alkali metal ion, Ca
2+Deng alkaline-earth metal ions etc.Said metal cation can move towards solar cell 403 directions under said effect of electric field.
Said anti-reflecting layer 407 is used to reduce the reflection of light of light when air is incident to light-transmission substrate 406.Anti-reflecting layer described in the present embodiment 407 is a sandwich construction, comprises the multi-layer anti-reflection film L1, L2, the L3 that are positioned at successively on the light-transmission substrate 406 ... Ln, but the structure of the single or multiple lift of antagonistic reflex layer 407 of the present invention and material thereof do not limit.
Said photovoltaic device also comprises barrier layer 405, is used to stop that material enters to solar cell 403 because of said electric field action in the said light-transmission substrate 406, to suppress the performance degradation of said solar cell 403.In the present embodiment, said barrier layer 405 is used for stopping that alkali metal ion arrives the position of solar cell 403 under direction effect of electric field shown in Fig. 5 arrow, to prevent Na
+Deng the corrosion of alkali metal ion, reduce the PID problem to solar cell 403.
In the present embodiment, said barrier layer 405 and said light-transmission substrate 406, the adhesive layer 402 that is provided with a plurality of solar cells 403 are in contact, and said barrier layer 405 can prevent Na
+Overflow from the lower surface of light-transmission substrate 406 Deng alkali metal ion.As shown in Figure 5, Na
+Though move downward under electric field action Deng alkali metal ion, since the barrier effect on barrier layer 405, Na
+Still be in the light-transmission substrate 406 Deng alkali metal ion.
But the present invention does not limit this, and in order to realize the isolation of the 405 pairs of light-transmission substrates in barrier layer, 406 interior materials and a plurality of solar cell 403, said barrier layer 405 gets final product between said light-transmission substrate 406 and said a plurality of solar cell 403.Specifically; Said barrier layer 405 can not contact with said light-transmission substrate 406; Can also not contact with said adhesive layer 402, can also all not contact, can also be positioned at the position of adhesive layer 402 inside, solar cell 403 tops with said light-transmission substrate 406, adhesive layer 402.
Particularly, said barrier layer 405 is the printing opacity insulating material.Preferably, the light transmission rate on said barrier layer 405 is more than or equal to 90%.
In the present embodiment, said barrier layer 405 and said light-transmission substrate 406, the adhesive layer 402 that is provided with a plurality of solar cells 403 are in contact.Have the good optical transmitance in order to ensure barrier layer 405, the preferable range of the refractive index on said barrier layer 405: 1.2-2.2, wherein optimum range is 1.3-1.8.
For example, for the photovoltaic device that is not provided with the barrier layer, the lamination that light-transmission substrate 406 (glass), adhesive layer 402 (ethylene-vinyl acetate copolymer) constitute has 88.32% light transmission rate.Between light-transmission substrate 406 (glass) and the adhesive layer 402 (ethylene-vinyl acetate copolymer) thickness being set is 100nm; Refractive index is the barrier layer 405 of 1.43 earth silicon material, and the light transmission rate that light-transmission substrate 406, barrier layer 405, adhesive layer are 402 3 layers is 88.19%.This shows through making light-transmission substrate 406, barrier layer 405, adhesive layer realize refractive index match for 402 3 layers, in new introducing layer of material, have influence on light transmission rate hardly.
In the present embodiment, the material on said barrier layer 405 is a silicon dioxide, and perhaps, the material on said barrier layer 405 is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.But the present invention does not limit the material on barrier layer 405.
The thickness on said barrier layer 405 is usually in the scope of 20 ~ 250nm.The excessive waste that causes material easily of the thickness on barrier layer 405, the too small meeting of said barrier layer 405 thickness simultaneously is affected the blocking effect on barrier layer 405.Therefore preferably, the thickness on said barrier layer 405 is in the scope of 50 ~ 150nm.Yet (for example: chemical vapour deposition (CVD)), the thickness on said barrier layer 405 is in the scope of 20 ~ 50nm for some process.The effect of metal cations such as stopping alkali metal ion, alkaline-earth metal ions still can be played in the barrier layer 405 of thickness range like this, can play the PID problem that suppresses photovoltaic module.
Need to prove, prove, the best results when thickness on barrier layer 405 is 20nm, 30nm, 40nm, 80nm, 100nm, 120nm or 150nm based on a large amount of experiment tests.Also has good blocking effect when certainly, the thickness on barrier layer 405 is positioned at 20 ~ 30nm, 30 ~ 40nm, 40 ~ 80nm, 80 ~ 100nm, 100nm ~ 120nm or 120 ~ 150nm scope.
Below in conjunction with concrete experimental data, explain that photovoltaic device of the present invention suppresses the effect of PID problem.
Listed the performance that the barrier layer is not set and the photovoltaic device sample on different materials, different-thickness barrier layer is set in the table 1.This sentences " residue power output percentage " as the parameter that characterizes Photovoltaic Device Performance.Specifically, said residue power output percentage be meant photovoltaic device test after power output with do the ratio of power output before the test.
Need to prove that the test condition that each sample is tested in the table 1 is all identical.Concrete test parameter is following: in temperature is 85 ° of C; Relative humidity is under 85% the environmental condition; Between the frame of photovoltaic device and internal circuit, apply the voltage of 1000V DC; Photovoltaic device is carried out accelerated aging test, test the I-V curve of photovoltaic device then, and obtain power output based on said I-V curve.
In addition, be the sample of silica-doped other oxides (being aluminium oxide, aluminium oxide and zirconia) for barrier material in the table 1, the main component on barrier layer is a silicon dioxide, the solid content of dopant material is no more than 66%.
Table 1
For the sample of sequence number 1, the barrier layer is not set in the photovoltaic device, residue power output percentage is merely 41.3%, and for the photovoltaic device sample that is provided with the barrier layer (sequence number 2 ~ 16), the residue power output is all greater than 41.3%.Especially for the good sample of barrier layer blocking effect, residue power output percentage can exceed 20 percentages when the barrier layer is not set.
As shown in table 1, the different materials barrier layer makes photovoltaic device have different performances.Specifically; Be in barrier layer thickness under the condition of 20nm, No. 7 samples using silicon dioxide alumina dopeds, No. 12 samples using silicon dioxide alumina dopeds and zirconia as the residue power output percentage (being respectively 57.5%, 56.1%) on barrier layer all greater than the dump power percentage (54.1%) on No. 2 sample earth silicon material barrier layers.This shows that silicon dioxide is better as the blocking effect on barrier layer than only adopting silicon dioxide with other oxide-doped formed barrier layers.
In addition, for the sample of same material, the barrier layer effect of different-thickness also is not quite similar.
For the sample of earth silicon material (sequence number 2 ~ 6), corresponding to different barrier layer thickness 20nm, 50nm, 100nm, 150nm, 250nm, photovoltaic device residue power output percentage is respectively 54.1%, 43.4%, 59.1%, 55.6%, 56.2%.This shows that for the barrier layer of earth silicon material, blocking effect is not to strengthen along with the increase of barrier layer thickness.Particularly; Along with beginning to increase residue power output percentage from 20nm, barrier layer thickness can descend to some extent earlier; Can rise to some extent along with the further increase residue power output percentage of thickness afterwards; Reach peak value during for 100nm until barrier layer thickness, can descend to some extent along with the increase residue power output percentage of thickness afterwards.This shows that for the barrier layer of earth silicon material, 100nm thickness has best blocking effect.
For the barrier layer (sequence number 7 ~ 11) of silica-doped alumina material, along with barrier layer thickness begins to increase to 250nm from 20nm, residue power output percentage increases gradually, and correspondingly, the performance of photovoltaic device is also more and more better.Yet; The barrier layer of 150nm, 250nm thickness than the recruitment of the pairing residue power output of 100nm thickness blocks layer percentage less than 1 percentage point; That is to say, after barrier layer thickness reaches 100nm, along with the improvement of the increase barrier layer blocking effect of barrier layer thickness is obvious inadequately.And the barrier layer thickness increase can cause the increase of cost, therefore combines the factor of blocking effect and cost, and cost performance was the highest when the thickness on barrier layer was 100nm.
Barrier layer (sequence number 12 ~ 16) for silica-doped aluminium oxide and zirconia material; Along with beginning to increase residue power output percentage from 20nm, barrier layer thickness can descend to some extent earlier; Can rise to some extent along with the further increase residue power output percentage of thickness afterwards; Time residue power output percentage reaches 60.2% to barrier layer thickness for 100nm, and the increase residue power output percentage along with thickness descends earlier to some extent afterwards, begins again afterwards to rise.Particularly, the barrier layer of 250nm thickness pairing residue power output percentage is 61.9%, compares with the barrier layer of 100nm thickness, and the thickness of 250nm has increased by 1.5 times, but the recruitment that remains power output percentage is less than 2 percentage points.Therefore combine the factor of blocking effect and cost, cost performance was the highest when the thickness on barrier layer was 100nm.
Correspondingly, the present invention also provides a kind of manufacturing approach of cover plate, with reference to figure 6, shows the schematic flow sheet of cover plate making method one execution mode of the present invention.The manufacturing approach of said cover plate roughly may further comprise the steps:
Step S1 provides light-transmission substrate, and said light-transmission substrate has opposite first and second surface, and said first surface is used in abutting connection with device work;
Step S2, the first surface of light-transmission substrate be formed for stopping material in the said light-transmission substrate because of electric field that device work produces overflow, with the barrier layer of the performance degradation that suppresses said device work.
Further specify below in conjunction with accompanying drawing and specific embodiment technical scheme cover plate making method of the present invention.
With reference to figure 7, show the sketch map of cover plate making method first embodiment of the present invention.
Execution in step S1 provides light-transmission substrate 500, and in the present embodiment, said light-transmission substrate 500 is a glass, comprises alkali metal ion, alkaline-earth metal ions and other metal cations in the said glass.Said glass has relative upper surface and lower surface.In the present embodiment, said lower surface is used in abutting connection with the device work such as solar cell, liquid crystal display module etc.
Execution in step S2; Be formed for stopping the barrier layer 501 of alkali metal ion, alkaline-earth metal ions and other metal cations at the lower surface of glass; Said barrier layer 501 can prevent that alkali metal ion, alkaline-earth metal ions and other metal cations receive influence and the effusion lower glass surface, and then suppresses the performance degradation of said device work.
Particularly, the material on said barrier layer 501 is a silicon dioxide, and perhaps, the material on said barrier layer 501 is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.Can pass through physical vapour deposition (PVD) (Physical Vapor Deposition; PVD), magnetron sputtering (magnetron sputtering), chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD), the method for collosol and gel (sol gel), volume to volume (roll to roll), spin coating (spin coating), spraying (spray coating), slot coated (slit coating) or dip-coating (dip coating) forms said barrier layer 501.
In the present embodiment, the manufacturing approach of said cover plate can also comprise: the second surface (upper surface) at light-transmission substrate 500 forms the anti-reflecting layer 502 that reduces the incident light reflection.The cover plate that forms like this when the inhibition metal cation is to the device work performance degradation, can also increase light transmission rate.
With reference to figure 8, show the sketch map of cover plate making method second embodiment of the present invention.In the present embodiment; Said anti-reflecting layer is a single layer structure; And the material of anti-reflecting layer is identical with the material on barrier layer, and said cover plate making method forms barrier layer 501 and anti-reflecting layer 502 simultaneously respectively on two surfaces of light-transmission substrate 500 after light-transmission substrate 500 is provided.
For example, said barrier layer 501 is silicon dioxide with anti-reflecting layer 502, can form barrier layer 501 and anti-reflecting layer 502 simultaneously respectively on two surfaces of light-transmission substrate 500 through the method for dip-coating (dip coating).
With reference to figure 9, show the sketch map of cover plate making method the 3rd embodiment of the present invention.Present embodiment is an example to form the sandwich construction anti-reflecting layer.
In order to form the anti-reflecting layer of sandwich construction; The step that forms anti-reflecting layer at the second surface of light-transmission substrate 500 comprises: the second surface at said light-transmission substrate 500 forms multi-layer anti-reflection film L1, L2, L3 successively ... Ln, said multi-layer anti-reflection film L1, L2, L3 ... Ln constitutes the anti-reflecting layer of sandwich construction.
Need to prove, in the embodiment of the manufacturing approach of above-mentioned cover plate, after the step that forms barrier layer 501, also comprise processing is dried on said barrier layer 501.Particularly, processed steps being dried on said barrier layer 501 comprises: the temperature with 100 ~ 300 ℃ is dried.
At light-transmission substrate 500 is among the embodiment of glass; The manufacturing approach of said cover plate; (or forming after the step of barrier layer and anti-reflecting layer) also comprises said glass carried out heat treated, so that said gamma transition is a toughened glass after the step that forms barrier layer 501.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (49)
1. a cover plate is suitable for covering device work, and said device work is formed with electric field at cover plate, it is characterized in that, said cover plate comprises:
Light-transmission substrate, said light-transmission substrate has opposite first and second surface, and said first surface is adjacent to said device work;
The barrier layer is positioned at the first surface of said light-transmission substrate, is used to stop that material is overflowed because of said electric field action in the said light-transmission substrate, to suppress the performance degradation of said device work;
Anti-reflecting layer is positioned at the second surface of said light-transmission substrate, is used to reduce reflection of incident light on the light-transmission substrate second surface.
2. cover plate according to claim 1 is characterized in that said barrier layer is the printing opacity insulating material.
3. like the said cover plate of claim 2, it is characterized in that the light transmission rate on said barrier layer is more than or equal to 90%.
4. cover plate according to claim 1 is characterized in that the material on said barrier layer is a silicon dioxide, and perhaps, the material on said barrier layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
5. like the said cover plate of claim 4, it is characterized in that the thickness on said barrier layer is in the scope of 20 ~ 250nm.
6. like the said cover plate of claim 5, it is characterized in that the thickness on said barrier layer is in the scope of 20 ~ 50nm.
7. like the said cover plate of claim 6, it is characterized in that the thickness on said barrier layer is 20nm, 30nm or 40nm.
8. like the said cover plate of claim 5, it is characterized in that the thickness on said barrier layer is in the scope of 50 ~ 150nm.
9. like the said cover plate of claim 8, it is characterized in that the thickness on said barrier layer is 80nm, 100nm, 120nm or 150nm.
10. cover plate according to claim 1 is characterized in that the material on said barrier layer is silica-doped aluminium oxide, and the thickness on said barrier layer is 100nm.
11., it is characterized in that said anti-reflecting layer is a single layer structure like the said cover plate of arbitrary claim in the claim 1 to 10.
12., it is characterized in that the material of said anti-reflecting layer is identical with the material on said barrier layer like the said cover plate of claim 11.
13. like the said cover plate of arbitrary claim in the claim 1 to 10, it is characterized in that said anti-reflecting layer is a sandwich construction, comprise the multi-layer anti-reflection film that is positioned at the light-transmission substrate second surface successively.
14., it is characterized in that the material of said anti-reflecting layer is identical with the material on said barrier layer like the said cover plate of claim 13.
15. cover plate is characterized in that according to claim 1, the material of said anti-reflecting layer is a silicon dioxide, and perhaps, the material of said anti-reflecting layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
16. cover plate is characterized in that according to claim 1, said light-transmission substrate is a glass.
17., it is characterized in that material is a metal cation in the said light-transmission substrate like the said cover plate of claim 16.
18. a solar energy glass is assemblied in solar cell, said solar cell forms electric field in said solar energy glass position, it is characterized in that said solar energy glass comprises:
Glass, said glass has opposite first and second surface, and said first surface is adjacent to said solar cell;
The printing opacity insulating barrier; Be positioned at the first surface of said glass; The material of said printing opacity insulating barrier is a silicon dioxide, and perhaps, the material of said printing opacity insulating barrier is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide;
Anti-reflecting layer is positioned at the second surface of said glass, is used to reduce reflection of incident light on the glass second surface.
19. solar energy glass as claimed in claim 18 is characterized in that, said glass is soda-lime glass.
20. a photovoltaic device is characterized in that, comprising:
Substrate is provided with solar cell in the said substrate;
Be positioned at suprabasil light-transmission substrate;
Be positioned at the anti-reflecting layer on the light-transmission substrate, be used to reduce reflection of light;
Barrier layer between light-transmission substrate and solar cell is used to stop that material enters to solar cell in the said light-transmission substrate, degenerates to suppress said Solar cell performance.
21., it is characterized in that said barrier layer is the printing opacity insulating material like the said photovoltaic device of claim 20.
22., it is characterized in that the light transmission rate on said barrier layer is more than or equal to 90% like the said photovoltaic device of claim 21.
23., it is characterized in that the material on said barrier layer is a silicon dioxide like the said photovoltaic device of claim 20, perhaps, the material on said barrier layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide.
24., it is characterized in that the thickness on said barrier layer is in the scope of 20 ~ 250nm like the said photovoltaic device of claim 20.
25., it is characterized in that the thickness on said barrier layer is in the scope of 20 ~ 50nm like the said photovoltaic device of claim 24.
26., it is characterized in that the thickness on said barrier layer is 20nm, 30nm or 40nm like the said photovoltaic device of claim 25.
27., it is characterized in that the thickness on said barrier layer is in the scope of 50 ~ 150nm like the said photovoltaic device of claim 24.
28., it is characterized in that the thickness on said barrier layer is 80nm, 100nm, 120nm or 150nm like the said photovoltaic device of claim 27.
29., it is characterized in that the material on said barrier layer is silica-doped aluminium oxide like the said photovoltaic device of claim 20, the thickness on said barrier layer is 100nm.
30., it is characterized in that said light-transmission substrate is a glass like the said photovoltaic device of claim 20.
31., it is characterized in that material is a metal cation in the said light-transmission substrate like the said photovoltaic device of claim 30.
32., it is characterized in that said substrate comprises substrate layer and be positioned at the adhesive layer on the substrate layer that said solar cell is arranged in the said adhesive layer like the said photovoltaic device of claim 20.
33., it is characterized in that said barrier layer contacts with said substrate like the said photovoltaic device of claim 20.
34., it is characterized in that said barrier layer contacts with said light-transmission substrate like claim 20 or 33 said photovoltaic devices.
35., it is characterized in that said barrier layer contacts with said adhesive layer, light-transmission substrate like the said photovoltaic device of claim 32; The refractive index on said barrier layer equates with the refractive index of adhesive layer, and perhaps, the refractive index on said barrier layer equates with the refractive index of said light-transmission substrate, and perhaps the refractive index on said barrier layer is between the refractive index of the refractive index of adhesive layer and light-transmission substrate.
36., it is characterized in that the refractive index on said barrier layer is in 1.2 ~ 2.2 scope like the said photovoltaic device of claim 20.
37., it is characterized in that the refractive index on said barrier layer is in 1.3 ~ 1.8 scope like the said photovoltaic device of claim 36.
38., it is characterized in that the material of said adhesive layer is one or more of ethylene-vinyl acetate copolymer or polyvinyl butyral resin like the said photovoltaic device of claim 20.
39., it is characterized in that said solar cell is a crystal silicon battery like the said photovoltaic device of claim 20.
40. the manufacturing approach of a cover plate, said cover plate is used to cover device work, and said device work is formed with electric field in the cover plate position, it is characterized in that, this method comprises:
Light-transmission substrate is provided, and said light-transmission substrate has opposite first and second surface, and said first surface is with respect to the more approaching said device work of second surface;
The first surface of light-transmission substrate be formed for stopping material in the said light-transmission substrate because of said electric field action overflow, with the barrier layer of the performance degradation that suppresses said device work.
41. the manufacturing approach like the said cover plate of claim 40 is characterized in that, also comprises:
Be formed for reducing the anti-reflecting layer of incident light reflection at the second surface of said light-transmission substrate, the identical and synchronous formation of thickness on this anti-reflecting layer and said barrier layer.
42. the manufacturing approach like the said cover plate of claim 40 is characterized in that, said light-transmission substrate is a glass, and material is a metal cation in the said light-transmission substrate.
43. manufacturing approach like the said cover plate of claim 42; It is characterized in that; The material on said barrier layer is a silicon dioxide, and perhaps, the material on said barrier layer is one or more the combination in silicon dioxide and aluminium oxide, zirconia, hafnium oxide, tantalum oxide or the titanium oxide; The step that forms the barrier layer at the first surface of light-transmission substrate comprises: the method through physical vapour deposition (PVD), magnetron sputtering, chemical vapour deposition (CVD), collosol and gel, volume to volume, spin coating, spraying, slot coated or dip-coating forms the barrier layer.
44. the manufacturing approach like the said cover plate of claim 41 is characterized in that, said anti-reflecting layer is a single layer structure, when forming the barrier layer, forms anti-reflecting layer.
45. the manufacturing approach like the said cover plate of claim 44 is characterized in that, the method through dip-coating forms barrier layer and anti-reflecting layer respectively on two surfaces of light-transmission substrate simultaneously.
46. the manufacturing approach like the said cover plate of claim 41 is characterized in that, said anti-reflecting layer is the sandwich construction that comprises the multi-layer anti-reflection film; The step that forms anti-reflecting layer at the second surface of light-transmission substrate comprises that successively the second surface at said light-transmission substrate forms the multi-layer anti-reflection film.
47. the manufacturing approach like the said cover plate of claim 40 is characterized in that, after the step that forms the barrier layer, also comprises processing is dried on said barrier layer.
48. the manufacturing approach like the said cover plate of claim 47 is characterized in that, processed steps is dried on said barrier layer comprise: the temperature with 100 ~ 300 ℃ is dried.
49. the manufacturing approach like the said cover plate of claim 42 is characterized in that, after the step that forms the barrier layer, also comprises said glass is carried out heat treated, so that said gamma transition is a toughened glass.
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|---|---|---|---|
| CN201210135182.4A CN102655178B (en) | 2012-04-28 | 2012-04-28 | Cover plate and manufacture method, solar energy glass, photovoltaic device |
| PCT/CN2013/073994 WO2013159646A1 (en) | 2012-04-28 | 2013-04-10 | Cover plate and method for manufacturing the same, solar glass, and photovoltaic device |
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| CN201210135182.4A CN102655178B (en) | 2012-04-28 | 2012-04-28 | Cover plate and manufacture method, solar energy glass, photovoltaic device |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031008A (en) * | 2012-12-10 | 2013-04-10 | 彩虹集团电子股份有限公司 | Preparation method of self-cleaning high-transmittance dual-layer antireflection coating sol |
| WO2013159646A1 (en) * | 2012-04-28 | 2013-10-31 | Saint-Gobain Glass France | Cover plate and method for manufacturing the same, solar glass, and photovoltaic device |
| CN103474480A (en) * | 2013-08-30 | 2013-12-25 | 苏州高创特新能源发展有限公司 | Solar cell module coated with films at two sides |
| CN103646977A (en) * | 2013-12-09 | 2014-03-19 | 英利集团有限公司 | Solar cell module |
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| CN107148676A (en) * | 2014-12-26 | 2017-09-08 | 材料概念有限公司 | Solar cell module and its manufacture method |
| CN110690304A (en) * | 2018-07-05 | 2020-01-14 | 张伟 | Photovoltaic ceramic tile containing barrier layer and preparation method thereof |
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| CN111477704A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Method for relieving PID attenuation of photovoltaic module |
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| JP6619139B2 (en) * | 2014-12-26 | 2019-12-11 | 株式会社マテリアル・コンセプト | Protective glass for solar cell and method for producing the same |
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| WO2013159646A1 (en) * | 2012-04-28 | 2013-10-31 | Saint-Gobain Glass France | Cover plate and method for manufacturing the same, solar glass, and photovoltaic device |
| CN103031008A (en) * | 2012-12-10 | 2013-04-10 | 彩虹集团电子股份有限公司 | Preparation method of self-cleaning high-transmittance dual-layer antireflection coating sol |
| CN103031008B (en) * | 2012-12-10 | 2015-10-28 | 彩虹集团电子股份有限公司 | A kind of preparation method of antireflective plated film colloidal sol of self-cleaning high permeability bilayer |
| AU2014279389B2 (en) * | 2013-06-12 | 2018-06-14 | Shin-Etsu Chemical Co., Ltd. | Coating liquid for suppressing deterioration of solar cell, thin film of same, and method for suppressing deterioration of solar cell |
| EP3010047A4 (en) * | 2013-06-12 | 2017-01-18 | Shin-Etsu Chemical Co., Ltd. | Coating liquid for suppressing deterioration of solar cell, thin film of same, and method for suppressing deterioration of solar cell |
| CN103474480A (en) * | 2013-08-30 | 2013-12-25 | 苏州高创特新能源发展有限公司 | Solar cell module coated with films at two sides |
| CN103646977A (en) * | 2013-12-09 | 2014-03-19 | 英利集团有限公司 | Solar cell module |
| CN103646977B (en) * | 2013-12-09 | 2016-08-17 | 韩帅 | Solar module |
| TWI578560B (en) * | 2014-12-17 | 2017-04-11 | 三菱電機股份有限公司 | Method for producing photovoltaic power device |
| CN107148676A (en) * | 2014-12-26 | 2017-09-08 | 材料概念有限公司 | Solar cell module and its manufacture method |
| US10355147B2 (en) | 2014-12-26 | 2019-07-16 | Material Concept, Inc. | Solar cell module and method for manufacturing the same |
| TWI684285B (en) * | 2014-12-26 | 2020-02-01 | 日商材料概念股份有限公司 | Solar battery module and manufacturing method thereof |
| CN107148676B (en) * | 2014-12-26 | 2020-07-03 | 材料概念有限公司 | Solar cell module and manufacturing method thereof |
| CN105088152A (en) * | 2015-08-04 | 2015-11-25 | 福建铂阳精工设备有限公司 | Method and device for manufacturing barrier film layer |
| CN110690304A (en) * | 2018-07-05 | 2020-01-14 | 张伟 | Photovoltaic ceramic tile containing barrier layer and preparation method thereof |
| CN111139987A (en) * | 2018-11-02 | 2020-05-12 | 光之科技(北京)有限公司 | Surface layer material, photovoltaic building material and preparation method thereof |
| CN111477704A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Method for relieving PID attenuation of photovoltaic module |
| CN113793875A (en) * | 2021-09-13 | 2021-12-14 | 西安隆基绿能建筑科技有限公司 | Photovoltaic packaging plate, manufacturing method thereof and photovoltaic module |
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| CN102655178B (en) | 2015-08-26 |
| WO2013159646A1 (en) | 2013-10-31 |
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