CN102646623A - Method for forming SOI (silicon on insulator) substrate isolation - Google Patents

Method for forming SOI (silicon on insulator) substrate isolation Download PDF

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CN102646623A
CN102646623A CN 201110044647 CN201110044647A CN102646623A CN 102646623 A CN102646623 A CN 102646623A CN 201110044647 CN201110044647 CN 201110044647 CN 201110044647 A CN201110044647 A CN 201110044647A CN 102646623 A CN102646623 A CN 102646623A
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oxide layer
forming
insulator
method
substrate
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CN 201110044647
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尹海洲
朱慧珑
骆志炯
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中国科学院微电子研究所
北京北方微电子基地设备工艺研究中心有限责任公司
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Abstract

The invention provides a method for forming an SOI (silicon on insulator) substrate isolation, which comprises the following steps: providing an SOI substrate, wherein the thickness of the surface semiconductor layer of the SOI substrate is less than 30nm; forming a first oxide layer on the SOI substrate; forming an opening in the first oxide layer to expose part of the SOI substrate; performing oxidation operation to form a second oxide layer on part of the SOI substrate; and removing the first oxide layer. Compared with the existing STI manufacturing process, the invention can effectively simplify the process and lower the manufacturing cost.

Description

—种SOI衬底隔离的形成方法 - The method of forming the SOI substrate species isolated

技术领域 FIELD

[0001] 本发明涉及半导体制造领域,特别涉及一种绝缘体上半导体(Semiconductor-on-Insulater, SOI)衬底隔离的形成方法。 [0001] The present invention relates to semiconductor manufacturing, and more particularly relates to a semiconductor (Semiconductor-on-Insulater, SOI) substrate, a method of forming an isolation insulator.

背景技术 Background technique

[0002] 浅沟槽隔离(Shallow Trench Isolation, STI)工艺是在衬底上形成隔离区的一种标准工艺,目前被广泛应用于半导体行业,尤其是超大规模集成(ULSI)电路中。 [0002] STI (Shallow Trench Isolation, STI) process is formed on the substrate a standard process isolation region, it is widely used in the semiconductor industry, especially in very large scale integrated (ULSI) circuits. STI工艺过程可以分为三个主要步骤:槽刻蚀、氧化物填充和氧化物平坦化。 STI process can be divided into three main steps: etching the grooves, oxide fill and planarization oxide. 相对于更早期的隔离工艺如局域氧化工艺(L0C0S),STI工艺更为复杂。 Earlier with respect to the isolation process, such as Local Oxidation (L0C0S), STI process is more complicated. 因此,有必要开发工艺更为简易的隔离工艺,以适应半导体工业的应用。 Therefore, it is necessary to develop the process more simple isolation process to suit the application in the semiconductor industry.

发明内容 SUMMARY

[0003] 本发明的目的旨在至少解决上述技术问题之一,特别是提供一种相对于STI工艺而言更为简易的绝缘体上半导体衬底隔离的形成方法。 [0003] The object of the present invention to solve at least one of the above-described technical problems, particularly with respect to provide a method for forming the STI process is more simple in terms of isolation insulator substrate.

[0004] 为达到上述目的,本发明提供一种SOI衬底隔离的形成方法,包括以下步骤:提供绝缘体上半导体衬底,所述绝缘体上半导体衬底的表层半导体层的厚度小于30nm ;在所述绝缘体上半导体衬底上形成第一氧化物层;在所述第一氧化物层中形成开口,以暴露部分区域的所述绝缘体上半导体衬底;执行氧化操作,以使所述部分区域的所述绝缘体上半导体衬底形成第二氧化物层;去除所述第一氧化物层。 [0004] To achieve the above object, the present invention provides a method of forming an SOI substrate isolation, comprising the steps of: providing a semiconductor on insulator substrate, the thickness of the surface semiconductor layer on insulator semiconductor substrate is smaller than 30 nm; in the a first oxide layer on said insulator formed on a semiconductor substrate; forming an opening to expose a portion of said insulator on the semiconductor substrate region in the first oxide layer; oxidation operation performed, so that the partial region the insulator is formed on the semiconductor substrate a second oxide layer; removing the first oxide layer.

[0005] 优选地,利用所述第二氧化物层作为隔离区。 [0005] Preferably, using the second oxide layer as an isolation region.

[0006] 本发明提出在SOI衬底的部分区域形成氧化物层,并利用所述氧化物层作为衬底的隔离区的方法,由于SOI衬底的表层半导体层非常薄故易于被氧化,因此,相对于现有的STI制造工艺,本发明可以有效简化工艺、降低制造成本。 [0006] The present invention proposes an oxide layer is formed in a partial region of the SOI substrate, using the oxide layer as a method for the isolation region of the substrate, since the surface of the semiconductor layer of the SOI substrate is very thin and therefore liable to be oxidized, with respect to a conventional STI fabrication processes, the present invention can effectively simplify the process and reduce the manufacturing cost.

[0007] 本发明附加的方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本发明的实践了解到。 [0007] The present additional aspects and advantages of the invention will be set forth in part in the description which follows, from the following description in part be apparent from, or learned by practice of the present invention.

附图说明 BRIEF DESCRIPTION

[0008] 本发明上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解,本发明的附图是示意性的,因此并没有按比例绘制。 [0008] The present invention described above and / or additional aspects and advantages therefore, not drawn to scale in the description of the embodiments will become apparent and more readily appreciated from the following in conjunction with the accompanying drawings, the drawings are illustrative of the present invention, and . 其中: among them:

[0009] 图1-7中示出本发明实施例的SOI衬底隔离的形成方法的各个步骤对应的器件结构剖面图。 [0009] Figures 1-7 are cross-sectional view of the device shows the structure of the respective steps of a method of isolating an SOI substrate formed embodiment of the present invention corresponding to the embodiment.

具体实施方式 detailed description

[0010] 下面详细描述本发明的实施例,所述实施例的示例在附图中示出,下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能解释为对本发明的限制。 [0010] Example embodiments of the present invention are described in detail below, exemplary embodiments of the embodiments shown in the drawings, the following is an exemplary embodiment by reference to the drawings of embodiments, only for explaining the present invention and should not be construed as limit the present invention.

[0011] 下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。 [0011] The following disclosure provides many different embodiments or examples to achieve different structures of the present invention. 为了简化本发明的公开,下文中对特定例子的部件和设置进行描述。 To simplify the disclosure of the present invention, be described hereinafter and the members of the specific examples provided. 当然,它们仅仅为示例,并且目的不在于限制本发明。 Of course, they are only illustrative, and are not intended to limit the present invention. 此外,本发明可以在不同例子中重复参考数字和/或字母。 Further, the present disclosure may repeat reference numerals and / or letters in the various examples. 这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施例和/或设置之间的关系。 This repetition is for the purpose of simplicity and clarity, and does not indicate a relationship between the embodiments and / or arrangements being discussed. 此夕卜,本发明提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的可应用于性和/或其他材料的使用。 Bu this evening, the present invention provides various specific examples of materials and processes, but one of ordinary skill in the art that other processes can be applied and / or the use of other materials. 另外,以下描述的第一特征在第二特征之“上”的结构可以包括第一和第二特征形成为直接接触的实施例,也可以包括另外的特征形成在第一和第二特征之间的实施例,这样第一和第二特征可能不是直接接触。 Further, the first characteristic configuration described below in the "on" a second feature may comprise first and second features are formed in direct contact embodiment may also include additional features may be formed between the first and second feature embodiments, so that the first and second features may not be in direct contact.

[0012] 以下,将参照这些附图对本发明实施例的各个步骤予以详细说明。 [0012] Hereinafter, with reference to the respective steps of the embodiments of the present invention, the accompanying drawings be described in detail.

[0013] 步骤SOl :提供SOI衬底100,所述SOI衬底的表层半导体层的厚度小于30nm。 [0013] Step SOl: providing an SOI substrate 100, the thickness of the surface layer of the semiconductor layer of the SOI substrate is less than 30nm.

[0014] 具体地,如图I所示,所述衬底100包括半导体基底102、形成在所述半导体基底上的埋氧层104和形成在所述埋氧层上的表层半导体层106,其中表层半导体层的厚度小于30nm。 [0014] Specifically, as shown in FIG. I, the substrate 100 includes a semiconductor substrate 102, buried oxide layer 104 is formed on the semiconductor substrate and the semiconductor layer 106 is formed on the surface of the buried oxide layer, wherein the thickness of the surface layer of the semiconductor layer is less than 30nm. 所述SOI衬底100包括绝缘体上硅衬底或绝缘体上硅锗衬底。 The SOI substrate 100 includes a silicon on insulator SOI substrate or a germanium substrate.

[0015] 在本发明实施例中,以绝缘体上硅衬底为例。 [0015] In an embodiment of the present invention, the silicon-on-insulator substrate as an example. 其中,半导体基底102以体硅为例;埋氧层104以氧化硅为例,其厚度优选地为5nm-100nm ;表层半导体层106以硅为例,由于表层半导体层106的厚度小于30nm,故这种SOI衬底被称为超薄型SOI衬底。 Wherein the semiconductor body is a silicon substrate 102 as an example; a buried oxide layer 104 of silicon oxide, for example, the thickness thereof is preferably 5nm-100nm; silicon surface layer of the semiconductor layer 106 as an example, since the thickness of the surface layer of the semiconductor layer 106 is less than 30 nm, it is this SOI substrate is referred to as ultra-thin SOI substrate.

[0016] 步骤S02 :在所述SOI衬底100上形成第一氧化物层108,如图2所示。 [0016] Step S02: a first oxide layer 108 is formed on the SOI substrate 100, as shown in FIG.

[0017] 具体地,可以在所述SOI衬底100上淀积第一氧化物层108。 [0017] Specifically, a first oxide layer 108 is deposited on the SOI substrate 100. 其中淀积的方式包括:例如溅射、脉冲激光淀积(PLD)、金属有机化学气相淀积(MOCVD)、原子层淀积(ALD)、等离子体增强原子层淀积(PEALD)或其他合适的方法。 Wherein deposition methods include: for example, sputtering, pulsed laser deposition (PLD), metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD) or other suitable Methods.

[0018] 本发明实施例中,第一氧化物层108为氧化硅,厚度可以为2nm-10nm,如5nm。 [0018] The embodiments of the present invention, a first oxide layer 108 of silicon oxide, thickness of 2nm-10nm, such as 5nm. 优选地,可以在第一氧化物层108上进一步形成氮化物层110作为硬掩膜,氮化物层的形成可以采用上述提及的形成第一氧化物层的淀积方法中的任何一种,氮化物层110的厚度可以为5nm_20nm,如10nm。 Preferably, the nitride layer may be further formed on the first oxide layer 110 as a hard mask 108, the nitride layer is formed may be any one of the above-mentioned deposition method for forming a first oxide layer is employed, the thickness of the nitride layer 110 may be 5nm_20nm, such as 10nm.

[0019] 步骤S03 :在所述第一氧化物层108中形成开口,以暴露部分区域的所述SOI衬底100。 [0019] Step S03: an opening to expose a partial region of the SOI substrate 100 is formed on the first oxide layer 108. 具体地,可以包括以下步骤: Specifically, comprising the steps of:

[0020] 首先,在氮化物层110上形成图案化的光刻胶层112,使衬底100的预设为隔离区上的氮化物层108暴露,如图3所示。 [0020] First, a patterned photoresist layer 112 is formed on the nitride layer 110, the substrate 100 is preset so that the nitride layer is exposed on the isolation region 108, as shown in FIG. 如果步骤S02中没有形成氮化物层110,则将光刻胶层112直接形成在第一氧化物层108上。 If the step S02 is not the nitride layer 110 is formed, then the resist layer 112 is formed directly on the first oxide layer 108.

[0021] 接着,刻蚀暴露的氮化物层110以及其下的第一氧化物层108以形成开口,从而暴露部分区域的所述SOI衬底100。 [0021] Next, the nitride layer 110 and etching the exposed first oxide layer beneath it to form an opening 108 to expose a partial region 100 of the SOI substrate. 刻蚀方法包括先以热磷酸去除氮化物层110再以氢氟酸去除第一氧化物层108。 The method comprises a first etching with hot phosphoric acid to remove the nitride layer 110 is removed by hydrofluoric acid and then to the first oxide layer 108. 如果步骤S02中没有形成氮化物层110,则可以利用氢氟酸去除第一氧化物层108。 If the step S02 is not the nitride layer 110 is formed, it may be removed by using hydrofluoric acid, the first oxide layer 108.

[0022] 去除光刻胶层112,如图4所示。 [0022] The photoresist layer 112 is removed, as shown in FIG.

[0023] 步骤S04 :执行氧化操作,以使所述部分区域的所述SOI衬底100形成第二氧化物层114,如图5所示。 [0023] Step S04: performing an oxidation operation, so that the partial region of the SOI substrate 100 is formed of the second oxide layer 114, as shown in FIG.

[0024] 由于本发明涉及的SOI衬底的表层半导体层的厚度非常薄(小于30nm),故暴露的半导体层在垂直于其表面的方向上很容易被完全氧化,与位于其下的埋氧层104相接以形成隔离区。 [0024] Since the thickness of the surface layer of the present invention relates to a semiconductor SOI substrate is very thin (less than 30 nm), it is easily exposed semiconductor layer is completely oxidized in a direction perpendicular to its surface, and a buried oxide located under contact layer 104 to form an isolation region.

[0025] 本发明实施例中,第一氧化物层108、第二氧化物层114,以及衬底的埋氧层104均是氧化硅,故形成了如图5所示的一个整体氧化硅层。 [0025] The embodiment of the present invention, a first oxide layer 108, a second oxide layer 114, the substrate 104 and the buried oxide layer are silicon oxide, so the formation of a silicon oxide layer integral shown in Figure 5 . 需注意地是,实际运用中,氧化区域通常会横向扩展而导致被第一氧化物层108覆盖的部分表层半导体层106被氧化,如图5中横向箭头所示区域X,因此,为了得到预设尺寸的隔离区,可以通过在步骤S03中通过设计光刻掩膜板的尺寸,以使形成的开口尺寸小于隔离区的尺寸,从而使该工艺误差得以修正。 It is noted to that practice, usually oxidized region laterally extended portions of the skin caused by the semiconductor layer 108 is covered with a first oxide layer 106 is oxidized, the region X shown in FIG horizontal arrow in Figure 5, therefore, in order to obtain a pre- resized isolation region, in the step S03 can be sized by photolithographic masking plate, so that the opening sized smaller than the size of the isolation region, so that the process error is corrected.

[0026] 如果之前形成了氮化物硬掩膜层110,则步骤S04之后还包括去除氮化物层110的步骤,如图6所示。 [0026] If the hard mask layer 110 is formed before a nitride, further comprising the step S04 after the step of removing the nitride layer 110, as shown in FIG. 例如可以利用热磷酸刻蚀氮化物层110。 For example, using hot phosphoric acid etching of the nitride layer 110.

[0027] 步骤S05 :去除第一氧化物层108,如图7所示。 [0027] Step S05: removing the first oxide layer 108, as shown in FIG. 例如可以利用氢氟酸刻蚀第一氧化物层108。 For example, using hydrofluoric acid etching the first oxide layer 108. 至此,即在超薄型SOI衬底中形成隔离区。 At this point, i.e., the isolation region is formed in the ultra-thin SOI substrate. 其中,第二氧化物层114构成隔离区,衬底的表层半导体层106构成有源区,并且第二氧化物层114与衬底的埋氧层104相接,起到隔离作用。 Wherein the second oxide layer 114 constituting the isolation region, the surface layer of the semiconductor substrate 106 constituting the active region, the buried oxide layer 104 and second oxide layer 114 in contact with the substrate, for isolation. 本实施例中,由于第一氧化物层108和第二氧化物层114均为氧化硅,故去除第一氧化物层108的同时去除部分第二氧化物层114。 In this embodiment, since the first oxide layer 108 and second oxide layer 114 are silicon oxide, so that the first oxide layer 108 is removed while the portions of the second oxide layer 114 is removed.

[0028] 本发明提出在SOI衬底的部分区域形成氧化物层,并利用所述氧化物层作为衬底的隔离区的方法,由于SOI衬底的表层半导体层非常薄故易于被氧化,因此,相对于现有的STI制造工艺,本发明可以有效简化工艺、降低制造成本。 [0028] The present invention proposes an oxide layer is formed in a partial region of the SOI substrate, using the oxide layer as a method for the isolation region of the substrate, since the surface of the semiconductor layer of the SOI substrate is very thin and therefore liable to be oxidized, with respect to a conventional STI fabrication processes, the present invention can effectively simplify the process and reduce the manufacturing cost.

[0029] 尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同限定。 [0029] While there has been illustrated and described embodiments of the present invention, those of ordinary skill in the art, to be understood that various changes may be made to these embodiments without departing from the principles and spirit of the present invention, modifications, substitutions and modifications, the scope of the invention being indicated by the appended claims and their equivalents.

Claims (9)

  1. 1. 一种绝缘体上半导体衬底隔离的形成方法,其特征在于,包括以下步骤: 提供绝缘体上半导体衬底,所述绝缘体上半导体衬底的表层半导体层的厚度小于30nm ; 在所述绝缘体上半导体衬底上形成第一氧化物层; 在所述第一氧化物层中形成开口,以暴露部分区域的所述绝缘体上半导体衬底; 执行氧化操作,以使所述部分区域的所述绝缘体上半导体衬底形成第二氧化物层; 去除所述第一氧化物层。 CLAIMS 1. A method for forming a semiconductor-on-insulator substrate of spacer, characterized in that it comprises the steps of: providing a semiconductor on insulator substrate, the semiconductor-on-insulator semiconductor substrate thickness of the surface layer is less than 30 nm; on the insulator a first oxide layer is formed on a semiconductor substrate; forming an opening to expose a portion of said insulator on the semiconductor substrate region in the first oxide layer; performing said oxidation operation, so that the partial region of the insulator It is formed on the semiconductor substrate a second oxide layer; removing the first oxide layer.
  2. 2.如权利要求I所述的形成方法,其特征在于,所述绝缘体上半导体衬底包括绝缘体上硅衬底或绝缘体上硅锗衬底。 2. The method of forming according to claim I, wherein said semiconductor substrate comprises a silicon-on-insulator substrate, a germanium substrate or a silicon-on-insulator-on-insulator.
  3. 3.如权利要求I所述的形成方法,其特征在于,形成所述第一氧化物层的方法为:在所述绝缘体上半导体衬底上淀积第一氧化物层。 The method of forming the I as claimed in claim 3, characterized in that the method of forming the first oxide layer: depositing a first oxide layer on the semiconductor-on-insulator substrate.
  4. 4.如权利要求I所述的形成方法,其特征在于,形成第一氧化物层和形成开口的步骤包括: 在所述第一氧化物层上形成氮化物层; 在所述氮化物层和第一氧化物层中形成开口。 And in the nitride layer; forming a nitride layer over the first oxide layer: forming method as claimed in claim I, wherein the step of forming a first oxide layer comprises forming an opening a first oxide layer is formed in the opening.
  5. 5.如权利要求4所述的形成方法,其特征在于,在形成第二氧化物层和去除所述第一氧化物层的步骤之间还包括去除所述氮化物层。 5. The method of forming according to claim 4, wherein forming the second oxide layer, and removing further comprising removing the nitride layer between the step of the first oxide layer.
  6. 6.如权利要求5所述的形成方法,其特征在于,以氢氟酸执行所述去除操作,或者先以热磷酸去除所述氮化物层再以氢氟酸去除所述第一氧化物层。 6. The method of forming according to claim 5, characterized in that, to perform the removal operation of hydrofluoric acid or hot phosphoric acid to remove the nitride layer was removed by hydrofluoric acid to the first oxide layer .
  7. 7.如权利要求I所述的形成方法,其特征在于,利用所述第二氧化物层作为隔离区。 7. The method of forming according to claim I, characterized in that, using the second oxide layer as an isolation region.
  8. 8.如权利要求7所述的形成方法,其特征在于,所述开口的尺寸小于所述隔离区的尺寸。 8. The forming method according to claim 7, wherein the size of the opening is less than the size of the isolation region.
  9. 9.如权利要求I所述的形成方法,其特征在于,以氢氟酸执行所述去除操作。 9. The method of forming according to claim I, wherein the hydrofluoric acid to perform the removal operation.
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