CN102612575A - 用于制造led用蓝宝石单晶基板的蓝宝石单晶、led用蓝宝石单晶基板、发光元件以及它们的制造方法 - Google Patents

用于制造led用蓝宝石单晶基板的蓝宝石单晶、led用蓝宝石单晶基板、发光元件以及它们的制造方法 Download PDF

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Publication number
CN102612575A
CN102612575A CN2010800516547A CN201080051654A CN102612575A CN 102612575 A CN102612575 A CN 102612575A CN 2010800516547 A CN2010800516547 A CN 2010800516547A CN 201080051654 A CN201080051654 A CN 201080051654A CN 102612575 A CN102612575 A CN 102612575A
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China
Prior art keywords
sapphire single
single crystal
crystal substrate
led
substrate
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CN2010800516547A
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English (en)
Chinese (zh)
Inventor
楠木克辉
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Resonac Holdings Corp
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Showa Denko KK
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
CN2010800516547A 2009-11-26 2010-11-25 用于制造led用蓝宝石单晶基板的蓝宝石单晶、led用蓝宝石单晶基板、发光元件以及它们的制造方法 Pending CN102612575A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-269154 2009-11-26
JP2009269154 2009-11-26
PCT/JP2010/070989 WO2011065403A1 (ja) 2009-11-26 2010-11-25 Ｌｅｄ用サファイア単結晶基板を製造するためのサファイア単結晶、ｌｅｄ用サファイア単結晶基板、発光素子及びそれらの製造方法

Publications (1)

Publication Number Publication Date
CN102612575A true CN102612575A (zh) 2012-07-25

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CN2010800516547A Pending CN102612575A (zh) 2009-11-26 2010-11-25 用于制造led用蓝宝石单晶基板的蓝宝石单晶、led用蓝宝石单晶基板、发光元件以及它们的制造方法

Country Status (4)

Country Link
KR (1) KR20120088756A (ja)
CN (1) CN102612575A (ja)
TW (1) TW201130156A (ja)
WO (1) WO2011065403A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104981561A (zh) * 2013-02-25 2015-10-14 株式会社德山 蓝宝石单晶芯及其制造方法
CN107407006A (zh) * 2015-03-26 2017-11-28 京瓷株式会社 蓝宝石部件、及蓝宝石部件的制造方法
CN114341410A (zh) * 2019-09-11 2022-04-12 日本碍子株式会社 13族元素氮化物结晶层的制造方法及晶种基板

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098298A (ja) * 2011-10-31 2013-05-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2013245149A (ja) * 2012-05-28 2013-12-09 Sumitomo Chemical Co Ltd サファイア単結晶製造用原料アルミナ及びサファイア単結晶の製造方法
EP3438332B1 (en) 2016-03-30 2023-08-30 Nikon Corporation Optical component comprising aluminum oxide
CN106764483B (zh) * 2016-11-30 2018-06-12 深圳市耀铭豪智能科技有限公司 一种led照明装置的制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63112498A (ja) * 1986-10-27 1988-05-17 Sumitomo Chem Co Ltd ベルヌ−イ法単結晶用原料アルミナ粉末
CN1343013A (zh) * 2000-09-13 2002-04-03 晶元光电股份有限公司 白色发光二极管
WO2003103062A1 (fr) * 2002-06-04 2003-12-11 Nitride Semiconductors Co.,Ltd. Dispositif semi-conducteur a base de nitrure de gallium et son procede de fabrication
JP2004123467A (ja) * 2002-10-03 2004-04-22 Shinkosha:Kk サファイア単結晶およびサファイア単結晶用原料
JP2005085888A (ja) * 2003-09-05 2005-03-31 Kyocera Corp 半導体素子用単結晶サファイア基板とその製造方法及びこれを用いたＧａＮ系半導体発光素子並びにＧａＮ系半導体白色発光素子
JP2008207993A (ja) * 2007-02-26 2008-09-11 Hitachi Chem Co Ltd サファイア単結晶の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152289A (ja) * 1983-02-16 1984-08-30 Seiko Epson Corp スタ−ブル−サフアイヤの製造方法
JP4908381B2 (ja) * 2006-12-22 2012-04-04 昭和電工株式会社 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63112498A (ja) * 1986-10-27 1988-05-17 Sumitomo Chem Co Ltd ベルヌ−イ法単結晶用原料アルミナ粉末
CN1343013A (zh) * 2000-09-13 2002-04-03 晶元光电股份有限公司 白色发光二极管
WO2003103062A1 (fr) * 2002-06-04 2003-12-11 Nitride Semiconductors Co.,Ltd. Dispositif semi-conducteur a base de nitrure de gallium et son procede de fabrication
JP2004123467A (ja) * 2002-10-03 2004-04-22 Shinkosha:Kk サファイア単結晶およびサファイア単結晶用原料
JP2005085888A (ja) * 2003-09-05 2005-03-31 Kyocera Corp 半導体素子用単結晶サファイア基板とその製造方法及びこれを用いたＧａＮ系半導体発光素子並びにＧａＮ系半導体白色発光素子
JP2008207993A (ja) * 2007-02-26 2008-09-11 Hitachi Chem Co Ltd サファイア単結晶の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104981561A (zh) * 2013-02-25 2015-10-14 株式会社德山 蓝宝石单晶芯及其制造方法
CN107407006A (zh) * 2015-03-26 2017-11-28 京瓷株式会社 蓝宝石部件、及蓝宝石部件的制造方法
CN114341410A (zh) * 2019-09-11 2022-04-12 日本碍子株式会社 13族元素氮化物结晶层的制造方法及晶种基板

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TW201130156A (en) 2011-09-01
KR20120088756A (ko) 2012-08-08

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Application publication date: 20120725