CN102592999A - Method for optimizing thickness of channel layer of quantum well high electron mobility transistor (HEMT) appliance - Google Patents

Method for optimizing thickness of channel layer of quantum well high electron mobility transistor (HEMT) appliance Download PDF

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CN102592999A
CN102592999A CN2012100729309A CN201210072930A CN102592999A CN 102592999 A CN102592999 A CN 102592999A CN 2012100729309 A CN2012100729309 A CN 2012100729309A CN 201210072930 A CN201210072930 A CN 201210072930A CN 102592999 A CN102592999 A CN 102592999A
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channel layer
gan
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CN102592999B (en
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胡伟达
王晓东
陈效双
陆卫
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中国科学院上海技术物理研究所
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Abstract

The invention discloses a method for optimizing the thickness of a channel layer of an AlN/GaN/AlN quantum well high electron mobility transistor (HEMT) appliance. Appliance simulation shows that the performance of the appliance can be well improved by controlling the thickness of a GaN channel to be between 15 and 22nm in a material growing process, the AlN/GaN/AlN quantum well HEMT appliance is manufactured according to the obtained result, and basis for optimizing the AlN/GaN/AlN quantum well HEMT appliance is provided. The method has great significance for improving the performance of the appliance and optimizing the design of the appliance.

Description

A kind of method of optimizing SQW HEMT device channel layer thickness

Technical field

The present invention relates to electronic component technology, specifically be meant a kind of method of the AlN/GaN/AlN of optimization SQW HEMT device channel layer thickness.

Background technology

Owing to have extensive use at aspects such as high-power, high frequency and high-temperature amplifiers, AlGaN/GaN heterojunction HEMT (HEMT) becomes the focus of semiconductor applications research in the past in the more than ten years.Yet along with dwindling of device size, a series of problems such as current collapse, self-heating effect, leakage current and short-channel effect have seriously restricted further developing of device.More high-power for the HEMT device is had, reduce current collapse effect people simultaneously and proposed some variants based on the AlGaN/GaN structure, such as: the people such as W.Lanfort of the New York State University in 2004 have proposed the AlGaN/InGaN/GaN heterostructure; The people such as O.Katz of Israel engineering institute in 2005 have proposed the InAlN/GaN heterostructure, have proved respectively that through testing them the HEMT device of these two kinds of structure fabrications has bigger power; The people such as J.Kuzmik of Technical University of Vienna in 2008 are inserted into the AlN thin layer in the InAlN/GaN heterojunction of lattice match; The result proves that this structure has not only reduced mixed crystal disordered chain but also increased the binding force of two-dimensional electron gas in raceway groove, thereby has greatly improved device performance; The people such as Dabrian of the SVT Associates of the world top MBE device fabrication company in 2008 have reported that AlN/GaN/AlN SQW HEMT has very high electron mobility (>1800cm 2/ Vs) and two-dimensional electron gas density (>3 * 10 3Cm -2).

In these new devices of deriving out based on AlGaN/GaN HEMT, AlN/GaN/AlN SQW HEMT is undoubtedly very promising a kind of.This is because the AlN/GaN heterojunction except that having very strong polarity effect, also has bigger conduction band band rank, can suppress short-channel effect and reduce threshold voltage.Because these good characteristics, AlN/GaN/AlN SQW HEMT can also be applied to many aspects such as high-power transparent organism transducer, Terahertz plasma wave launcher except in the device of high transconductance, low threshold voltage, having the important application.Yet under high frequency condition, because phon scattering, the electronics with high kinetic energy is easy to overflow raceway groove and is captured by trap, thereby causes the current collapse effect.In order to suppress the current collapse effect, the raceway groove of AlN/GaN/AlN SQW HEM must possess high conduction band barrier and high two-dimensional electron gas density simultaneously.Along with reducing of GaN channel layer thickness; Raceway groove place conduction band barrier height is dull to be increased; But, reduce the reduction that GaN channel layer thickness will cause two-dimensional electron gas density because the negative at the interface polarization charge of GaN channel layer and AlN resilient coating has depletion action to two-dimensional electron gas.

Therefore in order to guarantee high conduction band barrier in raceway groove place and high two-dimensional electron gas density simultaneously, the device architecture of optimizing AlN/GaN/AlN SQW HEMT seems particularly important.The present invention sets about research from the GaN channel layer thickness of AlN/GaN/AlN SQW HEMT, investigates the influence of channel layer thickness to conduction band barrier height and two-dimensional electron gas density, and the result who draws will have certain directive significance to the development of new device.

Summary of the invention

The invention provides a kind of method of the AlN/GaN/AlN of optimization SQW HEMT device channel layer thickness, this method obtains conduction band barrier height and the two-dimensional electron gas density rule with the channel layer varied in thickness through numerical simulation.In order to make raceway groove obtain high conduction band barrier and high two-dimensional electron gas density simultaneously; We define the common logarithm of two-dimensional electron gas density and the product of conduction band barrier height is the raceway groove figure of merit factor; Obtained best channel layer thickness through analyzing the raceway groove figure of merit factor with the curve of channel layer varied in thickness, and then made AlN/GaN/AlN SQW HEMT device according to the structural design after optimizing.Its step is following:

1. at first make up the structural model of AlN/GaN/AlN SQW HEMT device, promptly on the AlN single crystalline substrate, form AlN resilient coating, GaN channel layer, AlN barrier layer and Al successively 2O 3Gate dielectric layer, formation source, drain electrode on the AlN barrier layer then, and at Al 2O 3Form gate electrode on the gate dielectric layer;

2. make three experiment measuring samples, sample 1: the thick AlN film of growth 1 μ m on the thick AlN single crystalline substrate of 500 μ m; Sample 2: the thick GaN film of growth 50nm on the thick AlN single crystalline substrate of 500 μ m; Sample 3: 1um thick AlN resilient coating, 50nm thick GaN channel layer, 3.5nm thick AlN barrier layer and the thick Al of 5nm successively grow on the thick AlN single crystalline substrate of 500 μ m 2O 3Gate dielectric layer;

3. gained sample 1 obtains the performance parameter of AlN in the measuring process 2: energy gap is 6.2eV, electron effective mass m e=0.3m 0, electron mobility is 300~500cm 2/ Vs, relative dielectric constant ε r=8.5, effectively conduction band states density is N c=4.1 * 10 18, electron lifetime is about 10 -9S, electron saturation velocities v Sat=4.8 * 10 6Cm/s; Measuring samples 2 obtains the performance parameter of GaN: energy gap is 3.47eV, electron effective mass m e=0.222m 0, electron mobility is 1300~1500cm 2/ Vs, relative dielectric constant ε r=9.5, effectively conduction band states density is N c=2.65 * 10 18, electron lifetime is about 10 -8S, electron saturation velocities v Sat=1.03 * 10 7Cm/s; Obtain with capacitance voltage method measuring samples 3: Al 2O 3Gate dielectric layer and AlN barrier layer polarization charge densities at the interface are-1.6 * 10 13Cm -2, AlN barrier layer and GaN channel layer polarization charge densities at the interface are 2.6 * 10 13Cm -2, GaN channel layer and AlN resilient coating polarization charge densities at the interface are-2.6 * 10 13Cm -2

4. structure physical model: the fundamental equation of semiconductor device numerical simulation is the equation of current density in continuity equation, electronics and the hole in Poisson's equation, electronics and hole; Charge carrier is compound to add continuity equation through producing compound term; Comprise that SRH is compound, Auger is compound and radiation recombination, also will consider thermal effect, the speed saturation effect of charge carrier simultaneously, with Finite Element Method discretization simultaneous iterative; The tunneling effect of potential barrier is an independent equation, finds the solution from being in harmony with above-mentioned equation;

5. the experimental measurements according to step 2 is provided with physical parameter, and making the simulated environment temperature is 300K, and fixing channel layer thickness obtains the curve that conduction band barrier height and two-dimensional electron gas density change with lengthwise position respectively by numerical simulation;

6. change channel layer thickness, repeating step 5 obtains conduction band barrier height and a series of curves of two-dimensional electron gas density with the lengthwise position variation under the different channel layer thickness respectively;

7. in a series of curves that the conduction band barrier height changes with lengthwise position under the different channel layer thickness that in step 6, obtain; Choose a fixed position; Such as channel layer middle distance AlN barrier layer and 5nm place, GaN channel layer interface, obtain the curve of the conduction band barrier height Ec of this position with the channel layer varied in thickness;

8. in a series of curves of two-dimensional electron gas density with the lengthwise position variation, choose the two-dimensional electron gas density peak value under the different channel layer thickness that in step 6, obtain, obtain the curve of two-dimensional electron gas density peak value ns with the channel layer varied in thickness as research object;

9. define n sCommon logarithm Log (n s) and E cProduct, i.e. E cLog (n s) be the raceway groove figure of merit factor, two curves that utilize step 7 and step 8 to obtain obtain the curve of the raceway groove figure of merit factor with the channel layer varied in thickness;

10. observe the curve of the raceway groove figure of merit factor with the channel layer varied in thickness; Find that working as channel layer thickness is that the raceway groove figure of merit factor has maximum between 15~22nm; Explanation with the channel layer THICKNESS CONTROL between 15~22nm; Device channel can have the character of high conduction band barrier and high two-dimensional electron gas density concurrently, thereby can suppress the current collapse effect well and improve device performance;

11. prepare AlN/GaN/AlN SQW HEMT device according to Simulation result, at first on the AlN single crystalline substrate, utilize metal organic chemical vapor deposition technology growing AIN resilient coating, GaN channel layer and AlN barrier layer successively;

12. on the AlN barrier layer, utilize atom layer deposition process deposit Al 2O 3Gate dielectric layer, then through photoetching process in the source, the drain region forms the required window of etching, adopts reactive ion etching process to remove the Al of source, drain region 2O 3Dielectric film;

13. utilize photoetching process to obtain source, drain region window, adopt electron beam evaporation process then, evaporation metal ohmic contact Ti/Al/Ni/Au forms source electrode and drain electrode, at last at Al on source, drain region window 2O 3Utilize photoetching process to obtain the area of grid window on the gate dielectric layer, and on this area of grid window, adopt electron beam evaporation process evaporation gate metal Ni/Au, form grid.

Advantage of the present invention is: considered conduction band barrier height and the two-dimensional electron gas density rule with the channel layer varied in thickness simultaneously; Can confirm best channel layer thickness; Make electron channel possess high conduction band barrier and high two-dimensional electron gas density simultaneously, thereby scheme targetedly is provided for suppressing the current collapse effect and improving device performance.

Description of drawings

Fig. 1 is the structural representation of AlN/GaN/AlN SQW HEMT device.

Fig. 2 is vertical distribution map of conduction band barrier height under the different channel layer thickness.

Fig. 3 is vertical distribution map of two-dimensional electron gas density under the different channel layer thickness.

Fig. 4 is the curve of the conduction band barrier height at 5nm place with the channel layer varied in thickness for (right side) lengthwise position coordinate; (left side) two-dimensional electron gas density peak value is with the curve of channel layer varied in thickness.

Fig. 5 is raceway groove figure of merit factor E cLog (n s) with the curve of channel layer varied in thickness.

Embodiment

Elaborate below in conjunction with the accompanying drawing specific embodiments of the invention:

1. make up the structural model of AlN/GaN/AlN SQW HEMT device, as shown in Figure 1, on the thick AlN single crystalline substrate of 500 μ m, form the thick AlN resilient coating of 1 μ m, the GaN channel layer of variable thickness, AlN barrier layer and the thick Al of 5nm that 3.5nm is thick successively 2O 3Gate dielectric layer, formation source, drain electrode on the AlN barrier layer then, and at Al 2O 3Form gate electrode on the gate dielectric layer, the length of source, leakage and gate electrode is 1 μ m, and total device length is 5 μ m;

2. make three experiment measuring samples, sample 1: the thick AlN film of growth 1 μ m on the thick AlN single crystalline substrate of 500 μ m; Sample 2: the thick GaN film of growth 50nm on the thick AlN single crystalline substrate of 500 μ m; Sample 3: 1 μ m thick AlN resilient coating, 50nm thick GaN channel layer, 3.5nm thick AlN barrier layer and the thick Al of 5nm successively grow on the thick AlN single crystalline substrate of 500 μ m 2O 3Gate dielectric layer;

3. gained sample 1 obtains the performance parameter of AlN in the measuring process 2: energy gap is 6.2eV, electron effective mass m e=0.3m 0, electron mobility is 300~500cm 2/ Vs, relative dielectric constant ε r=8.5, effectively conduction band states density is N c=4.1 * 10 18, electron lifetime is about 10 -9S, electron saturation velocities v Sat=4.8 * 10 6Cm/s; Measuring samples 2 obtains the performance parameter of GaN: energy gap is 3.47eV, electron effective mass m e=0.222m 0, electron mobility is 1300~1500cm 2/ Vs, relative dielectric constant ε r=9.5, effectively conduction band states density is N c=2.65 * 10 18, electron lifetime is about 10 -8S, electron saturation velocities v Sat=1.03 * 10 7Cm/s; Obtain with capacitance voltage method measuring samples 3: Al 2O 3Gate dielectric layer and AlN barrier layer polarization charge densities at the interface are-1.6 * 10 13Cm -2, AlN barrier layer and GaN channel layer polarization charge densities at the interface are 2.6 * 10 13Cm -2, GaN channel layer and AlN resilient coating polarization charge densities at the interface are-2.6 * 10 13Cm -2

4. structure physical model: the fundamental equation of semiconductor device numerical simulation is the equation of current density in continuity equation, electronics and the hole in Poisson's equation, electronics and hole; Charge carrier is compound to add continuity equation through producing compound term; Comprise that SRH is compound, Auger is compound and radiation recombination, also will consider thermal effect, the speed saturation effect of charge carrier simultaneously, with Finite Element Method discretization simultaneous iterative; The tunneling effect of potential barrier is an independent equation, finds the solution from being in harmony with above-mentioned equation;

5. the experimental measurements according to step 2 is provided with physical parameter, and making the simulated environment temperature is 300K, and fixing channel layer thickness obtains the curve that conduction band barrier height and two-dimensional electron gas density change with lengthwise position respectively by numerical simulation;

6. change channel layer thickness, repeating step 5 obtains conduction band barrier height (Fig. 2) and a series of curves of two-dimensional electron gas density (Fig. 3) with the lengthwise position variation under the different channel layer thickness respectively.As can beappreciated from fig. 2, along with channel layer thickness reduces, the raceway groove barrier height is dull to be increased, and promptly raceway groove strengthens the constraint ability of electronics.As can beappreciated from fig. 3; Two-dimensional electron gas density reduce with channel layer thickness and dullness reduce; This is that when channel layer thickness reduced, the negative polarization electric charge produced depletion action to two-dimensional electron gas because GaN channel layer and AlN resilient coating interface are because polarity effect has negative polarization charge;

7. in a series of curves of conduction band barrier height with the lengthwise position variation, choose a fixed position (the lengthwise position coordinate is 5nm) under the different channel layer thickness that in step 6, obtain, obtain the conduction band barrier height E of this position cWith the curve of channel layer varied in thickness (Fig. 4 is right), can see intuitively from figure that the conduction band barrier height reduces with channel layer thickness and dull increasing;

8. in a series of curves of two-dimensional electron gas density with the lengthwise position variation, choose the two-dimensional electron gas density peak value under the different channel layer thickness that in step 6, obtain, obtain two-dimensional electron gas density peak value n as research object sWith the curve of channel layer varied in thickness (Fig. 4 left side), can see intuitively from figure that two-dimensional electron gas density reduces with channel layer thickness and dullness reduces;

9. define n sCommon logarithm Log (n s) and E cProduct, i.e. E cLog (n s) be the raceway groove figure of merit factor; Two curves that utilize step 7 and step 8 to obtain; Obtain the curve (Fig. 5) of the raceway groove figure of merit factor with the channel layer varied in thickness; Find that from Fig. 5 working as channel layer thickness is that the raceway groove figure of merit factor has maximum between 15~22nm, explains that with the channel layer THICKNESS CONTROL device has optimum performance between 15~22nm;

10. prepare AlN/GaN/AlN SQW HEMT device according to Simulation result, at first place the thick AlN single crystalline substrate of 500 μ m the reative cell of metal organic chemical vapor deposition (MOCVD) equipment, the vacuum degree of reative cell is evacuated to 1 * 10 -2Under the Torr, down the AlN substrate is carried out high-temperature heat treatment the mixed gas protected of hydrogen and ammonia, heating-up temperature is 1100 ℃, and be 5min heating time, and chamber pressure is 40Torr, and the feeding hydrogen flowing quantity is 1500sccm, and ammonia flow is 1500sccm;

11. underlayer temperature is reduced to 1080 ℃, and the maintenance growth pressure is 40Torr, hydrogen flowing quantity is 1500sccm, and ammonia flow is 1500sccm, and in reative cell, feeding flow is the aluminium source of 30 μ mol/min, and epitaxial growth thickness is the AlN resilient coating of 1 μ m;

12. growth temperature is reduced to 800 ℃, and the maintenance growth pressure is 40Torr, hydrogen flowing quantity is 1500sccm, and ammonia flow is 1500sccm, and in reative cell, feeding flow is the gallium source of 50 μ mol/min, is the GaN channel layer of 18.5nm with the growth thickness;

13. in reative cell, feed aluminium source and gallium source simultaneously, keeping reaction temperature is 800 ℃, controls flow well, growth thickness is the AlN barrier layer of 3.5nm, and feeding the gallium source simultaneously is in order to increase the diffusivity of aluminium atom on the surface;

14. form Al 2O 3Gate dielectric layer: adopt ALD technology at 300 ℃ of deposit Al 2O 3Film, the 60s that in 600 ℃ of following oxygen atmospheres, anneals then, obtaining thickness is the Al of 5nm 2O 3Layer; To the sample surfaces positive-glue removing, rotating speed is 5000 commentaries on classics/min then, in temperature is 80 ℃ baking oven, dries by the fire 10min again; Through photoetching and be developed in source, drain region and form the required window of etching, adopt reactive ion etching process to remove the Al of source, drain region 2O 3Dielectric film;

15. photolithographic source, drain region: for better stripping metal, at first on sample, get rid of binder, rotating speed is 8000 commentaries on classics/min; Time is 30s; In temperature is 160 ℃ high temperature oven, dry by the fire 20min, and then on this sample positive-glue removing, rotating speed is 5000 commentaries on classics/min; At last in temperature is 80 ℃ high temperature oven, dry by the fire 10min, photoetching obtains source, the drain region window that length is 1 μ m;

16. evaporation source, leakage metal: adopt four layers of metal of electron beam evaporation process deposit Ti/Al/Ni/Au;

17. peel off the source, leak metal and annealing: carry out sonicated after in acetone, soaking more than the 20min, dry up with nitrogen then.Sample is put into quick anneal oven anneals: at first fed nitrogen about 7 minutes to annealing furnace, under nitrogen atmosphere, temperature is to carry out the 30s short annealing under 800 ℃ of conditions then;

18. photoetched grid regional window: on sample, get rid of binder, rotating speed is 8000 commentaries on classics/min, and the time is 30s; , temperature dries by the fire 20min in being 160 ℃ high temperature oven; And then on this sample positive-glue removing, rotating speed is 5000 commentaries on classics/min, at last in temperature is 80 ℃ baking oven, dries by the fire 10min, it is the area of grid window of 1 μ m that photoetching obtains length;

19. evaporation gate metal: adopt electron beam evaporation process deposition Ni/Au double layer of metal, subsequently sample is immersed in the stripper 2 minutes, form grid.So far accomplished the making of the AlN/GaN/AlN SQW HEMT device after optimizing.

Claims (1)

1. method of optimizing SQW HEMT device channel layer thickness is characterized in that may further comprise the steps:
1) at first makes up the structural model of AlN/GaN/AlN SQW HEMT device, promptly on the AlN single crystalline substrate, form AlN resilient coating, GaN channel layer, AlN barrier layer and Al successively 2O 3Gate dielectric layer, formation source, drain electrode on the AlN barrier layer then, and at Al 2O 3Form gate electrode on the gate dielectric layer;
2) make three experiment measuring samples, sample 1: the thick AlN film of growth 1 μ m on the thick AlN single crystalline substrate of 500 μ m; Sample 2: the thick GaN film of growth 50nm on the thick AlN single crystalline substrate of 500 μ m; Sample 3: 1 μ m thick AlN resilient coating, 50nm thick GaN channel layer, 3.5nm thick AlN barrier layer and the thick Al of 5nm successively grow on the thick AlN single crystalline substrate of 500 μ m 2O 3Gate dielectric layer;
3) measuring process 2) in gained sample 1 obtain the performance parameter of AlN: energy gap is 6.2eV, electron effective mass m e=0.3m 0, electron mobility is 300~500cm 2/ Vs, relative dielectric constant ε r=8.5, effectively conduction band states density is N c=4.1 * 10 18, electron lifetime is about 10 -9S, electron saturation velocities v Sat=4.8 * 10 6Cm/s; Measuring samples 2 obtains the performance parameter of GaN: energy gap is 3.47eV, electron effective mass m e=0.222m 0, electron mobility is 1300~1500cm 2/ Vs, relative dielectric constant ε r=9.5, effectively conduction band states density is N c=2.65 * 10 18, electron lifetime is about 10 -8S, electron saturation velocities v Sat=1.03 * 10 7Cm/s; Obtain with capacitance voltage method measuring samples 3: Al 2O 3Gate dielectric layer and AlN barrier layer polarization charge densities at the interface are-1.6 * 10 13Cm -2, AlN barrier layer and GaN channel layer polarization charge densities at the interface are 2.6 * 10 13Cm -2, GaN channel layer and AlN resilient coating polarization charge densities at the interface are-2.6 * 10 13Cm -2
4) make up physical model: the fundamental equation of semiconductor device numerical simulation is the equation of current density in continuity equation, electronics and the hole in Poisson's equation, electronics and hole; Charge carrier is compound to add continuity equation through producing compound term; Comprise that SRH is compound, Auger is compound and radiation recombination, also will consider thermal effect, the speed saturation effect of charge carrier simultaneously, with Finite Element Method discretization simultaneous iterative; The tunneling effect of potential barrier is an independent equation, finds the solution from being in harmony with above-mentioned equation;
5) according to step 2) experimental measurements physical parameter is set, making the simulated environment temperature is 300K, fixing channel layer thickness obtains the curve that conduction band barrier height and two-dimensional electron gas density change with lengthwise position respectively by numerical simulation;
6) change channel layer thickness, repeating step 5), obtain conduction band barrier height and a series of curves of two-dimensional electron gas density under the different channel layer thickness respectively with the lengthwise position variation;
7) in a series of curves that the conduction band barrier height changes with lengthwise position under the different channel layer thickness that in step 6), obtain; Choose a fixed position; Such as channel layer middle distance AlN barrier layer and 5nm place, GaN channel layer interface, obtain the curve of the conduction band barrier height Ec of this position with the channel layer varied in thickness;
8) in a series of curves of two-dimensional electron gas density with the lengthwise position variation, choose the two-dimensional electron gas density peak value under the different channel layer thickness that in step 6), obtain, obtain two-dimensional electron gas density peak value n as research object sCurve with the channel layer varied in thickness;
9) definition n sCommon logarithm Log (n s) and E cProduct, i.e. E cLog (n s) be the raceway groove figure of merit factor, two curves that utilize step 7 and step 8 to obtain obtain the curve of the raceway groove figure of merit factor with the channel layer varied in thickness;
10) observe the curve of the raceway groove figure of merit factor, have maximum with the raceway groove figure of merit factor and confirm the channel layer optimum thickness with the channel layer varied in thickness.
CN201210072930.9A 2012-03-19 2012-03-19 Method for optimizing thickness of channel layer of quantum well high electron mobility transistor (HEMT) appliance CN102592999B (en)

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CN103855001A (en) * 2012-12-04 2014-06-11 中芯国际集成电路制造(上海)有限公司 Transistor and manufacturing method thereof
CN104157680A (en) * 2014-08-04 2014-11-19 安徽三安光电有限公司 Semi-conductor template, manufacturing method thereof, and LED or FET component with same
CN104167438A (en) * 2013-05-20 2014-11-26 北京天元广建科技研发有限责任公司 GaN-based HEMT device
CN104183635A (en) * 2013-05-28 2014-12-03 北京天元广建科技研发有限责任公司 Field effect transistor

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CN103855001A (en) * 2012-12-04 2014-06-11 中芯国际集成电路制造(上海)有限公司 Transistor and manufacturing method thereof
CN104167438A (en) * 2013-05-20 2014-11-26 北京天元广建科技研发有限责任公司 GaN-based HEMT device
CN104183635A (en) * 2013-05-28 2014-12-03 北京天元广建科技研发有限责任公司 Field effect transistor
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CN103633133A (en) * 2013-12-04 2014-03-12 中国电子科技集团公司第五十研究所 Quantum well HEMT (high electron mobility transistor) device and producing method thereof and two-dimensional electron gas distribution method
CN103633133B (en) * 2013-12-04 2016-03-02 中国电子科技集团公司第五十研究所 Quantum well HEMT device and preparation method thereof and two-dimensional electron gas location mode
CN104157680A (en) * 2014-08-04 2014-11-19 安徽三安光电有限公司 Semi-conductor template, manufacturing method thereof, and LED or FET component with same
CN104157680B (en) * 2014-08-04 2017-05-10 安徽三安光电有限公司 Semi-conductor template manufacturing method, and LED or FET component

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