CN102569348A - Active light-emitting element - Google Patents
Active light-emitting element Download PDFInfo
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- CN102569348A CN102569348A CN2012100334677A CN201210033467A CN102569348A CN 102569348 A CN102569348 A CN 102569348A CN 2012100334677 A CN2012100334677 A CN 2012100334677A CN 201210033467 A CN201210033467 A CN 201210033467A CN 102569348 A CN102569348 A CN 102569348A
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- emitting element
- circuit unit
- active light
- power line
- light
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Abstract
An active light-emitting element is configured on a substrate. The active light-emitting element comprises a scan line, a data line, a power line, a circuit unit and a light-emitting unit. The circuit unit is connected to the scan line, data line and power line, and at least comprises an overlapping member. The overlapping member at least partially overlaps on the power line. The light-emitting unit is driven by the circuit unit, and the light-emitting unit and the circuit unit defines a light-emitting region and a circuit region on the substrate, respectively. The circuit unit of the active light-emitting element and the power line partially overlap, to reduce the required configuration area of the circuit unit. Therefore, under the design of the same layout area, the inventive active light-emitting element has an increased light-emitting area to contribute to improvement of light-emitting brightness of the active light-emitting element.
Description
Technical field
The invention relates to a kind of light-emitting component, and particularly relevant for a kind of active light-emitting element.
Background technology
Along with the prosperity of Information technology, of all kinds (Personal Digital Assistant PDA) and information equipment such as digital still camera, all constantly weeds out the old and bring forth the new like computer, mobile phone, personal digital assistant.In these information equipments, display is being played the part of very important status all the time, and flat-panel screens (Flat Panel Display) is little by little to receive an acclaim owing to have the characteristic of slimming, lightweight and power saving.
In various flat-panel screens; Active-matrix Organic Light Emitting Diode (Active Matrix Organic Light Emitting Diode; Being called for short AMOLED) visual angle is wide, color contrast is effective because of having, response speed reaches low cost and other advantages soon for display, so be very suitable for application like small-size displays such as electronic clock, mobile phone, personal digital assistant and digital still cameras.
Yet the drive circuit of AMOLED need be made up of the more than one capacitor of a plurality of transistor AND gates.So the light-emitting area of AMOLED often is confined to the layout of these drive circuits and can't promotes.
Summary of the invention
The present invention provides a kind of active light-emitting element, has the light-emitting area of increase.
The present invention proposes a kind of active light-emitting element, is disposed on the substrate.Active light-emitting element comprises one scan line, a data line, a power line, a circuit unit and a luminescence unit.Circuit unit is connected to scan line, data line and power line, and circuit unit comprises a superimposed structure at least.Superimposed structure is overlapped in power line at least in part.Luminescence unit defines a luminous zone and a circuit region respectively by circuit unit driving and luminescence unit and circuit unit on substrate.
According to one embodiment of the invention, above-mentioned luminescence unit comprises one first electrode, a luminescent layer and one second electrode of storehouse in regular turn, and first electrode is connected to circuit unit.First electrode for example is a transparency electrode.Luminescent layer can be organic luminous layer.
According to one embodiment of the invention, above-mentioned circuit unit more comprises a first transistor and a transistor seconds.The common formation of superimposed structure and power line one reservior capacitor.The first transistor is connected in scan line, data line and superimposed structure, and transistor seconds is connected in superimposed structure, power line and luminescence unit.
According to one embodiment of the invention, above-mentioned superimposed structure is between substrate and power line.
Based on above-mentioned, the present invention partly is provided with the circuit unit of active light-emitting element with power line overlapping, so as to the required arrangement area in reduction circuit unit.So according to next, under the design of identical topology area, active light emitting source of the present invention is seen the light-emitting area that can have increase and the luminosity that helps to improve active light-emitting element.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Fig. 1 illustrates the sketch map into the active light-emitting element array of one embodiment of the invention.
Fig. 2 illustrates and is the schematic layout pattern of active light-emitting element according to an embodiment of the invention.
Fig. 3 illustrates and is the active luminescence unit 200 of Fig. 2 generalized section along hatching line I-I '.
Fig. 4 illustrates the sketch map into the active light-emitting element of another embodiment of the present invention.
Among the figure: 10,20 substrates, 100 active light-emitting element arrays, 110,200,300 active light-emitting elements, 210,310, the U2 circuit unit, 212,312 superimposed structures, 220,320, the U1 luminescence unit; 222 first electrodes, 224 luminescent layers, 226 second electrodes, A1 luminous zone, A2 circuit region, C reservior capacitor; C1, C2 channel layer, D1, D2 drain, DL data line, G1, G2 gate, GI lock insulating barrier; I-I ' hatching line, PI protects insulating barrier, PL power line, S1, S2 source electrode, SL scan line; The T1 the first transistor, T2, T3 transistor seconds, U1 luminescence unit, U2 circuit unit, W1, W2 contact openings.
Embodiment
Fig. 1 illustrates the sketch map into the active light-emitting element array of one embodiment of the invention.Please with reference to Fig. 1; Active light-emitting element array 100 is disposed on the substrate 10 and comprises multi-strip scanning line SL, many data line DL, many power line PL, a plurality of luminescence unit U1 and a plurality of circuit unit U2; Wherein the part section of the part section of the part section of each bar scan line SL, each bar data line DL and each bar power line PL all is connected to one of them circuit unit U2 accordingly, and each circuit unit U2 can be connected to one of them corresponding luminescence unit U1 to constitute an active luminescence unit 110.Therefore, active light-emitting element array 100 comes down to be made up of 110 of a plurality of active luminescence units that present arrayed.In other words, each active luminescence unit 110 all comprises part section, a circuit unit U2 and the luminescence unit U1 of the part section of the part section of a scan line SL, a data line DL, a power line PL.
Luminescence unit U1 can be the Organic Light Emitting Diode unit that utilizes luminous organic material to constitute.Want driven for emitting lights unit U1, then circuit unit U2 must be made up of a plurality of transistors and at least one capacitor haply.In general, the quantity of transistor AND gate capacitor circuit unit U2 more at most needs big more arrangement area, and the light-emitting area of restriction active light-emitting element array 100.Therefore, as shown in Figure 1 in the present embodiment, circuit unit U2 has at least a part to be overlapped in power line PL increases luminescence unit U1 in identical layout area with the arrangement area of reduction circuit unit U2 arrangement area.
In detail, Fig. 2 illustrates and is the schematic layout pattern of active light-emitting element according to an embodiment of the invention.Please with reference to Fig. 2, be overlapped in the layout of power line in order to realize circuit unit, the active luminescence unit 200 that is disposed on the substrate 20 includes one scan line SL, a data line DL, a power line PL, a circuit unit 210 and a luminescence unit 220.Circuit unit 210 is connected to scan line SL, data line DL and power line PL.Luminescence unit 220 is driven by circuit unit 210 and luminescence unit 220 defines a luminous zone A1 and a circuit region A2 respectively with circuit unit 210 on substrate 20.
In detail, circuit unit 210 comprises a first transistor T1, a transistor seconds T2 and a reservior capacitor C.Reservior capacitor C is overlapping and constitute jointly with power line PL by a superimposed structure 212.In addition, the first transistor T1 is connected in scan line SL, data line DL and superimposed structure 212, and transistor seconds T2 is connected in superimposed structure 212, power line PL and luminescence unit 220.Hence one can see that, and in the active luminescence unit 200, member thereby power line PL and reservior capacitor C that the part of power line PL constitutes reservior capacitor C overlap each other in topology layout.Thus, the area of luminous zone A1 relatively increases in the present embodiment and the area of circuit region A2 relatively dwindles, and this helps to improve the luminosity of active luminescence unit 200.
With present embodiment, active luminescence unit 200 is as shown in Figure 3 along the section of hatching line I-I '.Please be simultaneously with reference to Fig. 2 and Fig. 3, the first transistor T1 comprises gate G1, channel layer C1, source S 1 and drain D1.Transistor seconds T2 comprises gate G2, channel layer C2, source S 2 and drain D2.Reservior capacitor C then is made up of power line PL and 212 of superimposed structures.
In cross-section structure, gate G1, superimposed structure 212 and gate G2 for example are made up of the first metal layer by identical rete.And the scan line SL that is connected in gate G1 also is that the first metal layer constitutes thus.At this, superimposed structure 212 and gate G2 for example are the conductive patterns that links together, and are connected in the connected mode of reservior capacitor C to realize transistor seconds T2.Be coated with lock insulating barrier GI on the first metal layer, and lock insulating barrier GI has a contact openings W1 who exposes superimposed structure 212.Channel layer C1 and channel layer C2 are disposed at lock insulating barrier GI and go up and lay respectively at gate G1 and gate G2 top.
Source S 1, drain D1, source S 2 and drain D2 also are made up of second metal level by identical rete.And the power line PL that is connected in the data line DL of source S 1 and is connected in source S 2 also is that second metal level constitutes thus.Drain D1 can see through the superimposed structure 212 that contact openings W1 is connected to reservior capacitor C, is connected in the connected mode of reservior capacitor C to realize the first transistor T1.Can be known that by Fig. 3 in the present embodiment, superimposed structure 212 is between power line PL and substrate 20, but, with the change of rete stacking order, the stacked order of these members will change to some extent.So present embodiment only is the usefulness that illustrates, be not in order to limit scope of the present invention.Certainly, only be the usefulness that illustrates with the design of above-mentioned two metal level forming circuit unit 210, the present invention does not get rid of each member that comes forming circuit unit 210 with the 3rd metal level or with other conductive layer.
In addition, be coated with protection insulating barrier PI on second metal level, and protection insulating barrier PI has a contact openings W2 who exposes drain D2.Luminescence unit 220 is disposed at protection insulating barrier PI and goes up and include first electrode 222, luminescent layer 224 and second electrode 226.First electrode 222, luminescent layer 224 and second electrode 226 are stacked on the protection insulating barrier PI in order, and first electrode 222 sees through contact openings W2 and is connected in drain D2.In the present embodiment, luminescent layer 224 can be an organic luminous layer and optionally dispose retes such as carrier transport layer, carrier implanted layer, carrier barrier layer to realize required element characteristic between first electrode 222 and the luminescent layer 224 and between the luminescent layer 224 and second electrode 226.
What deserves to be mentioned is that it is the usefulness for illustrating that circuit unit 210 is made up of two transistors and a reservior capacitor.In other embodiments, transistorized quantity can be more than two in the circuit unit 210, and reservior capacitor also can be a plurality of.In addition, it also is the usefulness that illustrates that present embodiment is overlapped in power line PL with reservior capacitor C, and in other execution mode, the transistor in the circuit unit 210 also can optionally be overlapped in power line PL to help to improve the area of luminous zone A1.
For example, Fig. 4 illustrates the sketch map into the active light-emitting element of another embodiment of the present invention.Please with reference to Fig. 4, active light-emitting element 300 is similar in appearance to aforementioned active light-emitting element 200, and wherein identical member will be with the components identical symbology among two embodiment.Active light-emitting element 300 includes one scan line SL, a data line DL, a power line PL, a circuit unit 310 and a luminescence unit 320.Circuit unit 310 is connected to scan line SL, data line DL and power line PL.Luminescence unit 320 is driven by circuit unit 310.
Particularly, circuit unit 310 comprises a first transistor T1, a transistor seconds T3 and a reservior capacitor C.Reservior capacitor C is overlapping and constitute jointly with power line PL by a superimposed structure 312.In addition, the first transistor T1 is connected in scan line SL, data line DL and superimposed structure 312, and transistor seconds T3 is connected in superimposed structure 312, power line PL and luminescence unit 320.At this, the part of power line PL constitutes the end of transistor seconds T3, thereby transistor seconds T3 can overlap and the arrangement area of reduction circuit unit 310 with power line PL.Thus, the arrangement area of luminescence unit 320 can more increase than the arrangement area of luminescence unit 220 in the layout type of Fig. 2.
In sum, the present invention partly overlaps the circuit unit and the power line of active light-emitting element.Therefore, in the active light-emitting element of the present invention, the arrangement area of luminescence unit can increase and bigger luminosity is provided., active light-emitting element can improve the demonstration aperture opening ratio when being applied to display.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (6)
1. an active light-emitting element is disposed on the substrate, it is characterized in that, this active light-emitting element comprises:
The one scan line;
One data line;
One power line;
One circuit unit is connected to this scan line, this data line and this power line, and this circuit unit comprises a superimposed structure at least, and this superimposed structure is overlapped in this power line at least in part; And
One luminescence unit is driven and this luminescence unit and this circuit unit define a luminous zone and a circuit region respectively on this substrate by this circuit unit.
2. active light-emitting element according to claim 1 is characterized in that: this luminescence unit comprises one first electrode, a luminescent layer and one second electrode of storehouse in regular turn, and this first electrode is connected to this circuit unit.
3. active light-emitting element according to claim 2 is characterized in that: this first electrode is a transparency electrode.
4. active light-emitting element according to claim 2 is characterized in that: this luminescent layer is an organic luminous layer.
5. active light-emitting element according to claim 1; It is characterized in that: this circuit unit more comprises a first transistor and a transistor seconds; The common formation of this superimposed structure and this power line one reservior capacitor; This first transistor is connected in this scan line, this data line and this superimposed structure, and this transistor seconds is connected in this superimposed structure, this power line and this luminescence unit.
6. active light-emitting element according to claim 1 is characterized in that: this superimposed structure is between this substrate and this power line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100334677A CN102569348A (en) | 2012-02-15 | 2012-02-15 | Active light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100334677A CN102569348A (en) | 2012-02-15 | 2012-02-15 | Active light-emitting element |
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| CN102569348A true CN102569348A (en) | 2012-07-11 |
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| CN2012100334677A Pending CN102569348A (en) | 2012-02-15 | 2012-02-15 | Active light-emitting element |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017206796A1 (en) * | 2016-05-30 | 2017-12-07 | 京东方科技集团股份有限公司 | Oled array substrate, preparation method thereof, array substrate, and display device |
| CN110190103A (en) * | 2019-05-31 | 2019-08-30 | 武汉天马微电子有限公司 | A kind of display panel and display device |
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| US20030128173A1 (en) * | 2001-12-29 | 2003-07-10 | Lg. Philips Lcd Co., Ltd. | Active matrix organic electroluminescent display device and method of fabricating the same |
| CN1444200A (en) * | 2002-03-13 | 2003-09-24 | Lg.菲利浦Lcd株式会社 | Organic electroluminescent display whose power line and grid lind are parallel and its making method |
| CN1622714A (en) * | 2003-11-24 | 2005-06-01 | 三星Sdi株式会社 | Electroluminescent display device and manufacturing method thereof |
| US20060065903A1 (en) * | 2004-09-29 | 2006-03-30 | Seiko Epson Corporation | Electro-optical device, image forming apparatus, and image reader |
| CN1975841A (en) * | 2005-11-30 | 2007-06-06 | 精工爱普生株式会社 | Light-emitting device and electronic apparatus |
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2012
- 2012-02-15 CN CN2012100334677A patent/CN102569348A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030128173A1 (en) * | 2001-12-29 | 2003-07-10 | Lg. Philips Lcd Co., Ltd. | Active matrix organic electroluminescent display device and method of fabricating the same |
| CN1444200A (en) * | 2002-03-13 | 2003-09-24 | Lg.菲利浦Lcd株式会社 | Organic electroluminescent display whose power line and grid lind are parallel and its making method |
| CN1622714A (en) * | 2003-11-24 | 2005-06-01 | 三星Sdi株式会社 | Electroluminescent display device and manufacturing method thereof |
| US20060065903A1 (en) * | 2004-09-29 | 2006-03-30 | Seiko Epson Corporation | Electro-optical device, image forming apparatus, and image reader |
| CN1975841A (en) * | 2005-11-30 | 2007-06-06 | 精工爱普生株式会社 | Light-emitting device and electronic apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017206796A1 (en) * | 2016-05-30 | 2017-12-07 | 京东方科技集团股份有限公司 | Oled array substrate, preparation method thereof, array substrate, and display device |
| US10453909B2 (en) | 2016-05-30 | 2019-10-22 | Boe Technology Group Co., Ltd. | OLED array substrate with overlapped conductive layer and manufacturing method thereof, array substrate and display device |
| CN110190103A (en) * | 2019-05-31 | 2019-08-30 | 武汉天马微电子有限公司 | A kind of display panel and display device |
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Application publication date: 20120711 |