CN102566164B - Silicon-based liquid crystal display unit and manufacturing method thereof, and color filter structure - Google Patents

Silicon-based liquid crystal display unit and manufacturing method thereof, and color filter structure Download PDF

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Publication number
CN102566164B
CN102566164B CN201010592930.2A CN201010592930A CN102566164B CN 102566164 B CN102566164 B CN 102566164B CN 201010592930 A CN201010592930 A CN 201010592930A CN 102566164 B CN102566164 B CN 102566164B
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China
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electrode
optical filtering
reflecting electrode
light
liquid crystal
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CN102566164A (en
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毛剑宏
唐德明
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Xi'an Yisheng Photoelectric Technology Co., Ltd.
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Lexvu Opto Microelectronics Technology Shanghai Co Ltd
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Priority to PCT/CN2011/070646 priority patent/WO2012079298A1/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Abstract

The invention provides a silicon-based liquid crystal display unit and a manufacturing method thereof, and a color filter structure. The silicon-based liquid crystal display unit comprises a first filter electrode, a second filter electrode and a third filter electrode, wherein the first filter electrode is positioned above a first reflecting electrode, the second filter electrode is positioned above a second reflecting electrode, and the third filter electrode is positioned above a third reflecting electrode. A first light ray from external white light is filtered by the first reflecting electrode and the first filter electrode, a second light ray is filtered by the second reflecting electrode and the second filter electrode, a third light ray is filtered by the third reflecting electrode and the third filter electrode, and the light rays filtered by the first filter electrode, the second filter electrode and the third filter electrode are combined into a color pixel. Since the first filter electrode, the second filter electrode, the third filter electrode, the first reflecting electrode, the second reflecting electrode and the third reflecting electrode are made of metals, the filter electrodes of the silicon-based liquid crystal display unit are more stable, and reliability and yield of the silicon-based liquid crystal display unit can be improved.

Description

Silicon-based liquid crystal display unit and preparation method thereof, colorful filter structure
Technical field
The present invention relates to semiconductor applications, particularly the colorful filter structure of a kind of silicon-based liquid crystal display unit and preparation method thereof, silicon-based liquid crystal display unit.
Background technology
Liquid crystal on silicon (Liquid Crystal On Silicon, LCOS) is a kind of Novel reflection-type liquid crystal indicator.Existing liquid crystal on silicon is combined with CMOS manufacture craft, makes driving circuit on semiconductor chip, adopts CMOS technology that active pixel matrix is produced on to semiconductor chip, therefore has the little and high-resolution characteristic of size.
Existing silicon-based liquid crystal display unit is disclosed in the Chinese patent that is 200610119155.2 at application number.Existing silicon-based liquid crystal display unit generally includes: silicon base LCD chip base plate, glass substrate and be positioned at liquid crystal layer between the two.Please refer to Fig. 1, is existing silicon base LCD chip base plate structural representation.Described silicon base LCD chip base plate comprises: semiconductor chip 100, and described semiconductor chip 100 has the first switch 101, second switch 102, the 3rd switch 103; The first reflecting electrode 107, is electrically connected with the first switch 101 by the first conductive plunger 104, and described the first reflecting electrode 107 has light reflection face away from a side of semiconductor chip 100; The second reflecting electrode 108, is electrically connected with second switch 102 by the second conductive plunger 105, and described the second reflecting electrode 108 has light reflection face away from a side of semiconductor chip 100; The 3rd reflecting electrode 109, be electrically connected with the 3rd switch 103 by the 3rd conductive plunger 106, described the 3rd reflecting electrode 109 has light reflection face away from a side of semiconductor chip 100, described the first reflecting electrode 107, the second reflecting electrode 108, the 3rd reflecting electrode 109 mutually insulateds; Red lightscreening plate 111, is positioned at described the first reflecting electrode 107 tops, between described Red lightscreening plate 111 and the first reflecting electrode 107, has transparent insulation material; Blue color filter 112, is positioned at described the second reflecting electrode 108 tops, between described blue color filter 112 and the second reflecting electrode 108, has transparent insulation material; Green color filter 113, is positioned at described the 3rd reflecting electrode 109 tops, between described green color filter 113 and the 3rd reflecting electrode 109, has transparent insulation material; There is transparent insulation material described Red lightscreening plate 111, blue color filter 112, green color filter 113 tops; for the protection of Red lightscreening plate 111, blue color filter 112, green color filter 113, and make light can enter from top Red lightscreening plate 111, blue color filter 112, green color filter 113.Described silicon-based liquid crystal display unit also comprises liquid crystal layer, transparency conducting layer, does not add signal in figure.
Prior art is utilized Red lightscreening plate 111, blue color filter 112, green color filter 113 filters the white light of top input, Red lightscreening plate 111 is by green light and blue ray filtering in the white light of its top, described Red lightscreening plate 111 output red light, blue color filter 112 is by red light and green light filtering in the white light of its top, described blue color filter 112 output blue light, green color filter 113 is by red light and blue ray filtering in the white light of its top, described green color filter 113 top output green lights, the red light that described Red lightscreening plate 112 is exported, the green light that green color filter 113 is exported, the blue ray that blue color filter 112 is exported synthesizes a colour element.The principle that described optical filter filters is take red light as example, white light incident is from Red lightscreening plate 111 top incidents, green light wherein and blue ray are filtered by Red lightscreening plate 111, red light sees through described Red lightscreening plate 111 to described the first reflecting electrode 107 incidents, and reflected by the light reflection face of the first reflecting electrode 107, and again export upward through Red lightscreening plate 111.
Conventionally the material of Red lightscreening plate 111, blue color filter 112, green color filter 113 is organic resin material, in the time of heating, easily deform, optical filter cannot be filtered, affected the reliability of optical filter, thereby affect the display effect of display panels.The material of described optical filter is organic resin, in existing CMOS manufacture craft, do not make the equipment and process of organic resin material, therefore the making of described optical filter cannot with the CMOS process compatible of standard, this cannot cannot produce in the toilet of semiconductor manufacturing factory described optical filter, thereby need to make described optical filter in the makers' toilet of display panels.Because the cleanliness factor of the makers' toilet of display panels is well below the cleanliness factor of the toilet of semiconductor manufacturing factory, this can cause the upper device of having made of silicon base LCD chip base plate to be subject to particle contamination, thereby affects silicon-based liquid crystal display unit yield.
Therefore, need new silicon-based liquid crystal display unit, its filter sheet structure can with the CMOS manufacture craft compatibility of standard, and can improve the yield of silicon-based liquid crystal display unit, improve the display effect of silicon-based liquid crystal display unit.
Summary of the invention
The problem that the present invention solves has been to provide silicon-based liquid crystal display unit and preparation method thereof, colorful filter structure, make described silicon-based liquid crystal display unit optical filter can with the CMOS manufacture craft compatibility of standard, improve the yield of silicon-based liquid crystal display unit, improved the display effect of silicon-based liquid crystal display unit.
In order to address the above problem, the invention provides a kind of silicon-based liquid crystal display unit, comprise: glass substrate, the silicon base LCD chip base plate being oppositely arranged with glass substrate, and liquid crystal layer between described glass substrate and silicon base LCD chip base plate, wherein, described silicon base LCD chip base plate comprises:
Semiconductor chip, has the first switch, second switch, the 3rd switch in described semiconductor chip;
The first reflecting electrode, is positioned at the surface of described semiconductor chip towards liquid crystal layer, and described the first reflecting electrode is electrically connected with described the first switch, and described the first reflecting electrode is light reflection face towards the surface of liquid crystal layer;
The second reflecting electrode, is positioned at the surface of described semiconductor chip towards liquid crystal layer, and described the second reflecting electrode is electrically connected with described second switch, and described the second reflecting electrode is light reflection face towards the surface of liquid crystal layer;
The 3rd reflecting electrode, be positioned at the surface of described semiconductor chip towards liquid crystal layer, described the 3rd reflecting electrode is electrically connected with described the 3rd switch, described the 3rd reflecting electrode is light reflection face towards the surface of liquid crystal layer, described the 3rd reflecting electrode and the first reflecting electrode, the mutual electrical insulation of the second reflecting electrode;
The first optical filtering electrode, be positioned at the light reflection face top of the first reflecting electrode, described the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
The second optical filtering electrode, be positioned at the light reflection face top of the second reflecting electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
The 3rd optical filtering electrode, be positioned at the light reflection face top of the 3rd reflecting electrode, described the 3rd optical filtering electrode is semi-transparent metallic film, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light;
Liquid crystal alignment layer, covers described the first optical filtering electrode, the second optical filtering electrode, the 3rd optical filtering electrode.
Alternatively, described the first optical filtering electrode is electrically connected with the first reflecting electrode.
Alternatively, described the second optical filtering electrode is electrically connected with the second reflecting electrode.
Alternatively, described the 3rd optical filtering electrode is electrically connected with the 3rd reflecting electrode.
Alternatively, described semi-transparent metallic film material is metal, and thickness range is 10～500 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Alternatively, also comprise: the first insulation course, between described the first optical filtering electrode and the first reflecting electrode, the thickness of described the first insulation course equals 1/4 odd-multiple of described the first wavelength of light.
Alternatively, described the first insulation course material is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Alternatively, also comprise: the second insulation course, between described the second optical filtering electrode and the second reflecting electrode, the thickness of described the second insulation course equals 1/4 odd-multiple of described the second wavelength of light.
Alternatively, the material of described the second insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Alternatively, also comprise: the 3rd insulation course, between described the 3rd optical filtering electrode and the 3rd reflecting electrode, the thickness of described the 3rd insulation course equals 1/4 odd-multiple of described the 3rd wavelength of light.
Alternatively, the material of described the 3rd insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The present invention also provides a kind of method for making of silicon-based liquid crystal display unit, comprise: glass substrate, silicon base LCD chip base plate are provided, liquid crystal layer is filled between described glass substrate and silicon-based liquid crystal display unit, and the method for making of described liquid crystal on silicon display base plate comprises:
Semiconductor chip is provided, in described semiconductor chip, forms the first switch, second switch, the 3rd switch;
Form the first reflecting electrode, the second reflecting electrode, the 3rd reflecting electrode towards the surface of liquid crystal layer at described semiconductor chip, described the first reflecting electrode is electrically connected with described the first switch, and described the first reflecting electrode is light reflection face towards the surface of liquid crystal layer; Described the second reflecting electrode is electrically connected with described second switch, and described the second reflecting electrode is light reflection face towards the surface of liquid crystal layer; Described the 3rd reflecting electrode is electrically connected with described the 3rd switch, and described the 3rd reflecting electrode is light reflection face towards the surface of liquid crystal layer, described the 3rd reflecting electrode and the first reflecting electrode, the mutual electrical insulation of the second reflecting electrode;
Above the light reflection face of described the first reflecting electrode, forming the first optical filtering electrode described in the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
Above the light emission face of described the second reflecting electrode, form the second optical filtering electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
Above the light emission face of described the 3rd reflecting electrode, form the 3rd optical filtering electrode, described the 3rd optical filtering electrode is semi-transparent metallic film, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light.
Alternatively, described semi-transparent metallic film material is metal, and thickness range is 10～500 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Alternatively, before forming the first optical filtering electrode, also comprise: on the light reflection surface of described the first reflecting electrode, form the step of the first insulation course, the thickness of described the first insulation course equals 1/4 odd-multiple of described the first wavelength of light.
Alternatively, described the first insulation course material is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Alternatively, forming before the second optical filtering electrode, also comprise: on the light reflection surface of described the second reflecting electrode, form the step of the second insulation course, the thickness of described the second insulation course equals 1/4 odd-multiple of described the second wavelength of light.
Alternatively, the material of described the second insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Alternatively, also comprise: forming before the 3rd optical filtering electrode, also comprise: on the light reflection surface of described the 3rd reflecting electrode, form the step of the 3rd insulation course, the thickness of described the 3rd insulation course equals 1/4 odd-multiple of described the 3rd wavelength of light.
Alternatively, the material of described the 3rd insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The present invention also provides a kind of colorful filter structure of silicon-based liquid crystal display unit, comprising:
Semiconductor chip;
The first reflecting electrode, is positioned at described surface of semiconductor chip, and described the first reflecting electrode has light reflection face away from the surface of semiconductor chip;
The second reflecting electrode, is positioned at described surface of semiconductor chip, and described the second reflecting electrode has light reflection face away from the surface of semiconductor chip;
The 3rd reflecting electrode, is positioned at described surface of semiconductor chip, and described the 3rd reflecting electrode has light reflection face away from the surface of semiconductor chip, described the 3rd reflecting electrode and the first reflecting electrode and the second reflecting electrode mutually insulated;
The first optical filtering electrode, the corresponding setting of light reflection face with the first reflecting electrode, described the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
The second optical filtering electrode, the corresponding setting of light reflection face with the second reflecting electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
The 3rd optical filtering electrode, the corresponding setting of light reflection face with the 3rd reflecting electrode, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light.
Alternatively, described the first optical filtering electrode is electrically connected with the first reflecting electrode.
Alternatively, described the second optical filtering electrode is electrically connected with the second reflecting electrode.
Alternatively, described the 3rd optical filtering electrode is electrically connected with the 3rd reflecting electrode.
Alternatively, also comprise: the first insulation course, between described the first optical filtering electrode and the first reflecting electrode, the thickness of described the first insulation course equals 1/4 odd-multiple of described the first wavelength of light.
Alternatively, described the first insulation course material is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Alternatively, also comprise: the second insulation course, between described the second optical filtering electrode and the second reflecting electrode, the thickness of described the second insulation course equals 1/4 odd-multiple of described the second wavelength of light.
Alternatively, the material of described the second insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Alternatively, also comprise: the 3rd insulation course, between described the 3rd optical filtering electrode and the 3rd reflecting electrode, the thickness of described the 3rd insulation course equals 1/4 odd-multiple of described the 3rd wavelength of light.
Alternatively, the material of described semi-transparent film is metal, and its thickness range is 10～500 dusts, and described metal can be silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Compared with prior art, the invention provides a kind of silicon-based liquid crystal display unit, comprise the first optical filtering electrode that is positioned at the first reflecting electrode top, be positioned at the second optical filtering electrode of the second reflecting electrode top, be positioned at the 3rd optical filtering electrode of the 3rd reflecting electrode top, from the first light of outside white light by the first reflecting electrode and the first optical filtering electrode filtering, the second light is by the second reflecting electrode and the second optical filtering electrode filtering, the 3rd light is by the 3rd reflecting electrode and the 3rd optical filtering electrode filtering, through the first optical filtering electrode, the second optical filtering electrode, light after the 3rd optical filtering electrode filtering synthesizes a colour element.Because the material of the first optical filtering electrode, the second optical filtering electrode, the 3rd optical filtering electrode and the first reflecting electrode, the second reflecting electrode, the 3rd reflecting electrode is metal, utilize organic material as compared with optical filter with prior art, metal material of the present invention is more stable, has improved the reliability of silicon-based liquid crystal display unit; And utilize metallic film as optical filtering electrode, can be integrated with the CMOS technique of standard, improve the yield of existing silicon-based liquid crystal display unit.
Because described the first optical filtering electrode is only by the first light filtering in white light, described the second optical filtering electrode is by the second light filtering in white light, the 3rd optical filtering electrode is by the 3rd light filtering in white light, compared with only utilizing a kind of light with prior art, silicon-based liquid crystal display unit of the present invention is high to the utilization factor of incident ray, energy consumption is low, is suitable for micro-demonstration and flat panel display systems.
Accompanying drawing explanation
Fig. 1 is the silica-based filter unit structural representation of prior art.
Fig. 2 is the silicon-based liquid crystal display unit structural representation of one embodiment of the invention.
Fig. 3 is the structural representation of the silicon base LCD chip base plate of one embodiment of the invention.
Fig. 4 is the method for making schematic flow sheet of liquid crystal on silicon display base plate of the present invention.
Fig. 5～Fig. 8 is the method for making cross-section structure structural representation of silicon base LCD chip base plate of the present invention.
Embodiment
Inventor's discovery, the material of the optical filter of existing silicon-based liquid crystal display unit is organic resin material, it is distortion in the time of heating easily, unstable, affects filter effect, thereby makes silicon-based liquid crystal display unit reliability bad.And the manufacture craft of optical filter cannot with the CMOS manufacture craft compatibility of standard, thereby cause the yield of existing silicon-based liquid crystal display unit low.Because existing optical filter filters two color components in white light, only retain a color component, the color component of this reservation is via the reflective electrodes reflects of optical filter below, and through this optical filter, other color components that appear with other optical filters synthesize a colour element, existing optical filter is low to the utilization factor of incident ray, causes the energy consumption of existing silicon-based liquid crystal display unit high, is not suitable for micro display system and flat panel display systems.
Correspondingly, the invention provides a kind of silicon-based liquid crystal display unit, comprise: glass substrate, the silicon base LCD chip base plate being oppositely arranged with glass substrate, and liquid crystal layer between described glass substrate and silicon base LCD chip base plate, wherein, described silicon base LCD chip base plate comprises:
Semiconductor chip, has the first switch, second switch, the 3rd switch in described semiconductor chip;
The first reflecting electrode, is positioned at the surface of described semiconductor chip towards liquid crystal layer, and described the first reflecting electrode is electrically connected with described the first switch, and described the first reflecting electrode is light reflection face towards the surface of liquid crystal layer;
The second reflecting electrode, is positioned at the surface of described semiconductor chip towards liquid crystal layer, and described the second reflecting electrode is electrically connected with described second switch, and described the second reflecting electrode is light reflection face towards the surface of liquid crystal layer;
The 3rd reflecting electrode, be positioned at the surface of described semiconductor chip towards liquid crystal layer, described the 3rd reflecting electrode is electrically connected with described the 3rd switch, described the 3rd reflecting electrode is light reflection face towards the surface of liquid crystal layer, described the 3rd reflecting electrode and the first reflecting electrode, the mutual electrical insulation of the second reflecting electrode;
The first optical filtering electrode, be positioned at the light reflection face top of the first reflecting electrode, described the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
The second optical filtering electrode, be positioned at the light reflection face top of the second reflecting electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
The 3rd optical filtering electrode, be positioned at the light reflection face top of the 3rd reflecting electrode, described the 3rd optical filtering electrode is semi-transparent metallic film, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light;
Liquid crystal alignment layer, covers described the first optical filtering electrode, the second optical filtering electrode, the 3rd optical filtering electrode.
Silicon-based liquid crystal display unit based on said structure is owing to utilizing metal material as optical filtering electrode, compared with utilizing organic material making optical filter with prior art, optical filtering electrode of the present invention is not yielding in the time of high temperature, performance is more stable, guarantee the filter effect of optical filtering electrode, thereby improved silicon-based liquid crystal display unit reliability; Because the material of described optical filtering electrode is metal, thereby described silicon-based liquid crystal display unit can be integrated with CMOS manufacture craft, without making optical filter in display panels manufacturing plant, thereby reduce the particle contamination of silicon-based liquid crystal display unit, improved the yield of silicon-based liquid crystal display unit.
Silicon-based liquid crystal display unit utilization of the present invention is added secondary colours light, thereby has improved the utilization factor to incident ray, thereby has reduced the energy consumption of silicon-based liquid crystal display unit, is more suitable in micro-demonstration and flat panel display systems.
Below in conjunction with specific embodiments technical scheme of the present invention is described in detail.With reference to figure 2, it is the silicon-based liquid crystal display unit structural representation of one embodiment of the invention.
Described silicon-based liquid crystal display unit comprises: glass substrate 10, the silicon base LCD chip base plate 20 being oppositely arranged with glass substrate 10, and liquid crystal layer 30 between described glass substrate 10 and silicon base LCD chip base plate 20.Wherein, the structure of described glass substrate 10 and liquid crystal layer 30 is same as the prior art, as those skilled in the art's known technology, is not described in detail here.
Described glass substrate 10 top input white light, described white light arrives silicon base LCD chip base plate 20 through liquid crystal layer 20.White light is decomposed into 3 color components (being red light, green light and blue ray) by described silicon base LCD chip base plate 20,3 color components are reflected respectively, and control the deflection angle of liquid crystal layer 20, control three intensity that color component is exported by liquid crystal layer 30,3 color components become the colour element with certain gray scale and brightness.
With reference to figure 3, be the structural representation of described silicon base LCD chip base plate of the present invention, described silicon base LCD chip base plate 20 comprises:
Semiconductor chip 200, has the first switch 201, second switch 202, the 3rd switch 203 in described semiconductor chip 200, described the first switch 201, second switch 202, the 3rd switch 203 electrical insulation;
The first reflecting electrode 207, is positioned at described semiconductor chip 200 towards the surface of liquid crystal layer, and described the first reflecting electrode 207 is light reflection face towards the surface of liquid crystal layer, between the first reflecting electrode 207 and the first switch 201, has electrical insulation medium; Described the first reflecting electrode 207 is light reflection face towards the surface of liquid crystal layer;
The first conductive plunger 204, in the electrical insulation medium between the first reflecting electrode 207 and the first switch 201, described the first conductive plunger 204 is electrically connected the first reflecting electrode 207 with the first switch 201;
The second reflecting electrode 208, is positioned at described semiconductor chip 200 towards the surface of liquid crystal layer, and described the second reflecting electrode 208 is light reflection face towards the surface of liquid crystal layer, between the second reflecting electrode 208 and second switch 202, has electrical insulation medium;
The second conductive plunger 205, in the electrical insulation medium between the second reflecting electrode 208 and second switch 202, described the second conductive plunger 205 is electrically connected the second reflecting electrode 208 with second switch 202;
The 3rd reflecting electrode 209, be positioned at the surface of described semiconductor chip 200 towards liquid crystal layer, described the 3rd reflecting electrode 209 is light reflection face towards the surface of liquid crystal layer, between the 3rd reflecting electrode 209 and the 3rd switch 203, there is electrical insulation medium, described the 3rd reflecting electrode 209 and the first reflecting electrode 207, the mutual electrical insulation of the second reflecting electrode 208;
The 3rd conductive plunger 206, in the electrical insulation medium between the 3rd reflecting electrode 209 and the 3rd switch 203, described the 3rd conductive plunger 206 is electrically connected the 3rd reflecting electrode 209 with the 3rd switch 203;
The first optical filtering electrode 210, be positioned at the light reflection face top of the first reflecting electrode 207, described the first optical filtering electrode 210 is semi-transparent metallic film, and described the first optical filtering electrode 210 is 1/4 odd-multiple of the first wavelength of light with the distance of the light reflection face of described the first reflecting electrode 207;
The second optical filtering electrode 211, be positioned at the light reflection face top of the second reflecting electrode 208, described the second optical filtering electrode 211 is semi-transparent metallic film, and described the second optical filtering electrode 211 is 1/4 odd-multiple of the second wavelength of light with the distance of the light reflection face of described the second reflecting electrode 208;
The 3rd optical filtering electrode 212, be positioned at the light reflection face top of the 3rd reflecting electrode 209, described the 3rd optical filtering electrode 209 is semi-transparent metallic film, described the 3rd optical filtering electrode 212 is 1/4 odd-multiple of the 3rd wavelength of light with the distance of the light reflection face of described the 3rd reflecting electrode 209, described the 3rd optical filtering electrode 212 and described the first optical filtering electrode 210, the second optical filtering electrode 211 electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light;
Liquid crystal alignment layer 219, covers described the first optical filtering electrode 210, the second optical filtering electrode 211, the 3rd optical filtering electrode 212; Described liquid crystal alignment layer 219 has fixing arranging for the liquid crystal molecule of the liquid crystal layer above making; Described liquid crystal alignment layer 219 materials are monox, silicon nitride, silit, silicon oxynitride or combination wherein.
As preferred embodiment, described silicon base LCD chip base plate 20 also comprises:
The first insulation course 220, between described the first optical filtering electrode 210 and the first reflecting electrode 207, the material of described the first insulation course 220 is transparent insulation material, equal the first wavelength of light 1/4 times of the thickness of described the first insulation course 220;
In the first connecting line 213, the first insulation courses 220, described the first connecting line 213 is electrically connected described the first optical filtering electrode 210 with the first reflecting electrode 207;
The second insulation course 221, between described the second optical filtering electrode 211 and the second reflecting electrode 208, the material of described the second insulation course 221 is transparent insulation material, equal the second wavelength of light 1/4 times of the thickness of described the second insulation course 221;
The second connecting line 215, is positioned at described the second insulation course 221, and described the second connecting line 215 is electrically connected described the second optical filtering electrode 211 with the second reflecting electrode 208;
The 3rd insulation course 222, between described the 3rd optical filtering electrode 212 and the 3rd reflecting electrode 209, the material of described the 3rd insulation course 222 is transparent insulation material, equal the 3rd wavelength of light 1/4 times of the thickness of described the 3rd insulation course 222;
The 3rd connecting line 214, is positioned at described the 3rd insulation course 222, and described the 3rd connecting line 214 is electrically connected described the 3rd optical filtering electrode 212 with the 3rd reflecting electrode 209.
Light reflection mask body of the present invention refers to, parallel rays incident ray reflecting surface, and the light after being reflected is still parallel rays; Semi-transparent film of the present invention specifically refers to, incident ray half is through, and half is reflected; The material of described semi-transparent metallic film is metal, and described metal can be silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein; The thickness range of described semi-transparent metallic film is 10～500 dusts.
The material of described semiconductor chip 200 is semiconductor material, for example, be silicon, germanium, silicon-on-insulator (SOI) etc.
Described the first switch 201, second switch 202, the 3rd switch 203 are metal-oxide semiconductor transistor (MOS transistor).Conventionally, described the first switch 201, second switch 202, the 3rd switch 203 produce respectively electric signal under the control of external circuit, because described the first switch 201 is electrically connected with the first reflecting electrode 207, the second reflecting electrode 208 is electrically connected with second switch 202, the 3rd reflecting electrode 209 is electrically connected with the 3rd switch 203, therefore described electric signal produces electric field force between each reflecting electrode and glass substrate, and described electric field force can make liquid crystal layer that corresponding deflection occurs.Because described the first connecting line 213 is electrically connected described the first optical filtering electrode 210 with the first reflecting electrode 207, described the second connecting line 215 is electrically connected described the second optical filtering electrode 211 with the second reflecting electrode 208, described the 3rd optical filtering electrode 212 is electrically connected with the 3rd reflecting electrode 209, thereby, described electric signal produces electric field force between each optical filtering electrode and glass substrate, because the distance of each optical filtering electrode and glass substrate is less than the distance of each reflecting electrode, thereby, electric field intensity between described each optical filtering electrode and glass substrate is greater than the electric field intensity between reflecting electrode and glass substrate, in the case of the electric signal of each switch is constant, the ability of the driving liquid crystal of silicon base LCD chip base plate improves, more be conducive to drive liquid crystal deflecting element.Or make liquid crystal molecule that identical deflection occur, the present invention needs less electric signal, has reduced the energy consumption of silicon-based liquid crystal display unit, is more suitable for the application of micro-demonstration and liquid crystal display systems.
As an embodiment, the material of described the first reflecting electrode 207, described the second reflecting electrode 208, described the 3rd reflecting electrode 209 is metal, and described metal can be silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
In the present embodiment, described the first optical filtering electrode 210 and the first reflecting electrode 207 cooperatings, by the first light filtering in the white light from outside, the complementary light of output the first light; Described the second optical filtering electrode 211 and the second reflecting electrode 208 cooperatings, by the second light filtering in the white light from outside, the complementary light of output the second light; Described the 3rd optical filtering electrode 212 and the 3rd reflecting electrode 209 cooperatings, by the 3rd light filtering in the white light from outside, the complementary light of output the 3rd light.The complementary light of the complementary light of described the first light, the complementary light of the second light, the 3rd light synthesizes the deflection of the liquid crystal molecule that passes through respectively liquid crystal layer, forms the light of different gray scales, and synthetic colour element.Wherein, the principle of filtering the first light, the second light, the 3rd light is identical.
With described the first optical filtering electrode 210 and the first reflecting electrode 207 cooperatings, be example by the first light filtering in the white light from outside, principle is as follows:
White light is inputted from glass substrate, arrive the first optical filtering electrode 210 through liquid crystal layer, the first light in described white light is divided into Part I and Part II at the first optical filtering electrode 210 places, wherein Part I sees through the light reflection surface of the first optical filtering electrode 210 to first reflecting electrodes 207, and by described light reflection surface reflection, described Part II is reflected by the first optical filtering electrode, because the distance between the first optical filtering electrode 210 and the first reflecting electrode 207 equals 1/4 odd-multiple of the first wavelength of light, thereby first the Part I of light and the wavelength difference of Part II be 1/2 poor odd-multiple of the first wavelength of light, the frequency of described Part I and Part II is identical, therefore, described Part I and Part II generation destructive interference, thereby in white light, the first light is by filtering,
The second light in described white light is divided into Part I and Part II at the first optical filtering electrode 210 places, wherein Part I sees through the light reflection surface of the first optical filtering electrode 210 to first reflecting electrodes 207, and by described light reflection surface reflection, described Part II is reflected by the first optical filtering electrode, because the distance between the first optical filtering electrode 210 and the first reflecting electrode 207 equals 1/4 odd-multiple of the first wavelength of light, thereby second the Part I of light and the wavelength difference of Part II be 1/2 poor odd-multiple of the first wavelength of light, do not meet the Part I of the second light and the condition of Part II destructive interference, therefore, Part I and Part II form the second light and are reflected away,
Based on same principle, the 3rd light of described white light is divided into Part I at the first optical filtering electrode 210 places and Part II is reflected away.
Due to described the first optical filtering electrode 210 and the first reflecting electrode 207 cooperatings, by the first light filtering in the white light from outside, therefore, what in white light, utilize is the complementary light of the first light.As preferred embodiment, described the first light is three primary colours light, for example, be red light, and the intensity of red light accounts for 1/3 of white light intensity conventionally, thereby 2/3 part of white light is reflected, and forms colour element.And prior art utilizes optical filter filtration white light conventionally to retain the one in three primary colours light, for example red light, by the complementary light filtering of red light, has only utilized 1/3 of white light intensity.Therefore, compared with prior art, the light utilization of silicon-based liquid crystal display unit of the present invention improves, and has reduced the energy consumption of silicon-based liquid crystal display unit, is more conducive to micro display system and liquid crystal display systems.
Due to described the first optical filtering electrode 210, the second optical filtering electrode 211, the material of the 3rd optical filtering electrode 212 is metal, it is heated not yielding, with respect to existing organic resin material, the first optical filtering electrode 210 of the present invention, the second optical filtering electrode 211, the 3rd optical filtering electrode 212 is more stable, and described the first optical filtering electrode 210, the making of the second optical filtering electrode 211 and the 3rd optical filtering electrode 212 can utilize the method for making metal in semiconductor fabrication process to make, thereby the first optical filtering electrode 210 of the present invention, the second optical filtering electrode 211 and the 3rd optical filtering electrode 212 can be made in the toilet of semiconductor manufacturing factory, and without making in the makers' toilet of display panels, this has been avoided the not high defect that the device of described silicon-based liquid crystal display unit is brought of the makers' cleanliness factor of display panels (being mainly particle contamination), thereby be conducive to improve the yield of silicon-based liquid crystal display unit.
The present invention also provides a kind of method for making of silicon-based liquid crystal display unit, described method comprises: glass substrate, silicon base LCD chip base plate are provided, liquid crystal layer is filled between described glass substrate and silicon-based liquid crystal display unit, wherein, the method for making of described silicon base LCD chip base plate please refer to Fig. 4, comprising:
Step S1, provides semiconductor chip, forms the first switch, second switch, the 3rd switch in described semiconductor chip;
Step S2, form the first reflecting electrode, the second reflecting electrode, the 3rd reflecting electrode towards the surface of liquid crystal layer at described semiconductor chip, described the first reflecting electrode is electrically connected with described the first switch, and described the first reflecting electrode is light reflection face towards the surface of liquid crystal layer; Described the second reflecting electrode is electrically connected with described second switch, and described the second reflecting electrode is light reflection face towards the surface of liquid crystal layer; Described the 3rd reflecting electrode is electrically connected with described the 3rd switch, and described the 3rd reflecting electrode is light reflection face towards the surface of liquid crystal layer, described the 3rd reflecting electrode and the first reflecting electrode, the mutual electrical insulation of the second reflecting electrode;
Step S3, above the light reflection face of described the first reflecting electrode, forming the first optical filtering electrode described in the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
Step S4, above the light emission face of described the second reflecting electrode, form the second optical filtering electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
Step S5, above the light emission face of described the 3rd reflecting electrode, form the 3rd optical filtering electrode, described the 3rd optical filtering electrode is semi-transparent metallic film, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light.
Below in conjunction with specific embodiment, technical scheme of the present invention is described in detail.Please refer to Fig. 5～Fig. 8, is silicon-based liquid crystal display unit method for making cross-sectional view of the present invention.
First, with reference to figure 5, provide semiconductor chip 200, in described semiconductor chip 200, be formed with the first switch 201, second switch 202, the 3rd switch 203.Described the first switch 201, second switch 202, the 3rd switch 203 are MOS transistor.
Then, continue with reference to figure 5, form the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209 towards the surface of liquid crystal layer at described semiconductor chip 200, described the first reflecting electrode 207 is electrically connected with described the first switch 201, and described the first reflecting electrode 207 is light reflection face towards the surface of liquid crystal layer; Described the second reflecting electrode 208 is electrically connected with described second switch 202, and described the second reflecting electrode 208 is light reflection face towards the surface of liquid crystal layer; Described the 3rd reflecting electrode 209 is electrically connected with described the 3rd switch 203, and described the 3rd reflecting electrode 209 is light reflection face towards the surface of liquid crystal layer, described the 3rd reflecting electrode 209 and the first reflecting electrode 207, the mutual electrical insulation of the second reflecting electrode 208.
As preferred embodiment, before forming described the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209, need to form the electrical insulation material that covers described the first switch 201, second switch 202, the 3rd switch 203.Described electrical insulation material can be monox, silicon nitride, silit, silicon oxynitride or combination wherein.Forming after electrical insulation material, carry out metallization process, in described electrical insulation material, form the first conductive plunger 204, the second conductive plunger 205, the 3rd conductive plunger 206, described the first conductive plunger 204 is for being electrically connected described the first reflecting electrode 207 and the first switch 201, described the second conductive plunger 205 is for being electrically connected described the second reflecting electrode 208 and second switch 202, and described the 3rd conductive plunger 206 is for being electrically connected described the 3rd reflecting electrode 209 and the 3rd switch 203.
As one embodiment of the present of invention, after forming each conductive plunger, form respectively the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209.The thickness range of described the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209 is 500～10000 dusts.As an embodiment, the thickness of described the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209 is optimized design, makes each reflecting electrode have different thickness.Particularly, the deviation of the thickness of described the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209 has relation with the wavelength of the first light, the second light, the 3rd light respectively.The thickness deviation of described the first reflecting electrode 207 and the second reflecting electrode 208 be the first light and the second wavelength of light poor 1/4; The thickness deviation of described the second reflecting electrode 208 and the 3rd reflecting electrode 209 be the second light and the 3rd wavelength of light poor 1/4.
As Fig. 6, after forming described the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209, gap-fill electrical insulation material that need to be between the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209, makes described the first reflecting electrode 207, the second reflecting electrode 208, the 3rd reflecting electrode 209 mutually insulateds.
Then with reference to figure 7, as one embodiment of the present of invention, forming after the first reflecting electrode 207, form before the first optical filtering electrode, also need on the light reflection surface of described the first reflecting electrode 207, form the first insulation course 220, the thickness of described the first insulation course 220 equals 1/4 odd-multiple of described the first wavelength of light, and described the first insulation course 220 can support the first optical filtering electrode of follow-up formation, makes it to equal with the distance of the first reflecting electrode 207 1/4 odd-multiple of the first wavelength of light.Described the first insulation course 220 materials are monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Forming after the second reflecting electrode 208, form before the first optical filtering electrode, also need on the light reflection surface of described the second reflecting electrode 208, form the second insulation course 221, the thickness of described the second insulation course 221 equals 1/4 odd-multiple of described the second wavelength of light, described the second insulation course 221 can support the second optical filtering electrode of follow-up formation, makes it to equal with the distance of the second reflecting electrode 208 1/4 odd-multiple of the second wavelength of light.The material of described the second insulation course 221 is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Forming after the 3rd reflecting electrode 209, before formation the 3rd optical filtering electrode, also need on the light reflection surface of described the 3rd reflecting electrode 209, form the 3rd insulation course 222, the thickness of described the 3rd insulation course 222 equals 1/4 odd-multiple of described the 3rd wavelength of light.Described the 3rd insulation course 222 can support the 3rd optical filtering electrode of follow-up formation, makes it to equal with the distance of the 3rd reflecting electrode 209 1/4 odd-multiple of the 3rd wavelength of light.The material of described the 3rd insulation course 222 is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Then, carry out metallization process, at interior formation the first connecting line 213 of described the first insulation course 220, at interior formation the second connecting line 215 of described the second insulation course 221, at the interior formation of described the 3rd insulation course 222 the 3rd connecting line 214.Described the first connecting line 213 is for being electrically connected the first optical filtering electrode of the first reflecting electrode 207 and follow-up formation.Described the second connecting line 215 is for being electrically connected the second optical filtering electrode of the second reflecting electrode 208 and follow-up formation, and described the 3rd connecting line 214 is for being electrically connected the 3rd optical filtering electrode of the 3rd reflecting electrode 209 and follow-up formation.
Continue with reference to figure 7, deposit semi-transparent metallic film, the thickness range of described metallic film is 10～500 dusts, and material is metal, and described metal can be silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Then, please refer to Fig. 8, metal level described in etching, forms the first optical filtering electrode 210, the second optical filtering electrode 211, the three optical filtering electrodes 212.Described the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light; Described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light; Described the 3rd optical filtering electrode is semi-transparent metallic film, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light.
Finally, with reference to figure 3, carry out depositing operation, form the liquid crystal alignment layer 219 that covers described the first optical filtering electrode 210, the second optical filtering electrode 211, the three optical filtering electrodes 212.The material of described the first liquid crystal alignment layer 219 can be monox, silicon nitride, silit or silicon oxynitride, and its method for making is same as the prior art, as those skilled in the art's known technology, is not described in detail here.
To sum up, silicon-based liquid crystal display unit provided by the invention utilizes semi-transparent film as optical filter, by integrated to the manufacturing process of optical filter and CMOS manufacture craft, has improved yield and the reliability of silicon-based liquid crystal display unit.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible variation and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection domain of technical solution of the present invention.

Claims (29)

1. a silicon-based liquid crystal display unit, comprise: glass substrate, the silicon base LCD chip base plate being oppositely arranged with glass substrate, and liquid crystal layer between described glass substrate and silicon base LCD chip base plate, it is characterized in that, described silicon base LCD chip base plate comprises:
Semiconductor chip, has the first switch, second switch, the 3rd switch in described semiconductor chip;
The first reflecting electrode, is positioned at the surface of described semiconductor chip towards liquid crystal layer, and described the first reflecting electrode is electrically connected with described the first switch, and described the first reflecting electrode is light reflection face towards the surface of liquid crystal layer;
The second reflecting electrode, is positioned at the surface of described semiconductor chip towards liquid crystal layer, and described the second reflecting electrode is electrically connected with described second switch, and described the second reflecting electrode is light reflection face towards the surface of liquid crystal layer;
The 3rd reflecting electrode, be positioned at the surface of described semiconductor chip towards liquid crystal layer, described the 3rd reflecting electrode is electrically connected with described the 3rd switch, described the 3rd reflecting electrode is light reflection face towards the surface of liquid crystal layer, described the 3rd reflecting electrode and the first reflecting electrode, the mutual electrical insulation of the second reflecting electrode;
The first optical filtering electrode, be positioned at the light reflection face top of the first reflecting electrode, described the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
The second optical filtering electrode, be positioned at the light reflection face top of the second reflecting electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
The 3rd optical filtering electrode, be positioned at the light reflection face top of the 3rd reflecting electrode, described the 3rd optical filtering electrode is semi-transparent metallic film, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light;
Liquid crystal alignment layer, covers described the first optical filtering electrode, the second optical filtering electrode, the 3rd optical filtering electrode.
2. silicon-based liquid crystal display unit as claimed in claim 1, is characterized in that, described the first optical filtering electrode is electrically connected with the first reflecting electrode.
3. silicon-based liquid crystal display unit as claimed in claim 1, is characterized in that, described the second optical filtering electrode is electrically connected with the second reflecting electrode.
4. silicon-based liquid crystal display unit as claimed in claim 1, is characterized in that, described the 3rd optical filtering electrode is electrically connected with the 3rd reflecting electrode.
5. silicon-based liquid crystal display unit as claimed in claim 1, is characterized in that, described semi-transparent metallic film material is metal, and thickness range is 10～500 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
6. silicon-based liquid crystal display unit as claimed in claim 1, it is characterized in that, also comprise: the first insulation course, between described the first optical filtering electrode and the first reflecting electrode, the thickness of described the first insulation course equals 1/4 odd-multiple of described the first wavelength of light.
7. silicon-based liquid crystal display unit as claimed in claim 6, is characterized in that, described the first insulation course material is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
8. silicon-based liquid crystal display unit as claimed in claim 1, is characterized in that, also comprises: the second insulation course, between described the second optical filtering electrode and the second reflecting electrode, the thickness of described the second insulation course equals 1/4 odd-multiple of described the second wavelength of light.
9. silicon-based liquid crystal display unit as claimed in claim 8, is characterized in that, the material of described the second insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
10. silicon-based liquid crystal display unit as claimed in claim 1, is characterized in that, also comprises: the 3rd insulation course, between described the 3rd optical filtering electrode and the 3rd reflecting electrode, the thickness of described the 3rd insulation course equals 1/4 odd-multiple of described the 3rd wavelength of light.
11. silicon-based liquid crystal display units as claimed in claim 10, is characterized in that, the material of described the 3rd insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The method for making of 12. silicon-based liquid crystal display units as claimed in claim 1, comprise: glass substrate, silicon base LCD chip base plate are provided, liquid crystal layer is filled between described glass substrate and silicon-based liquid crystal display unit, it is characterized in that, the method for making of described liquid crystal on silicon display base plate comprises:
Semiconductor chip is provided, in described semiconductor chip, forms the first switch, second switch, the 3rd switch;
Form the first reflecting electrode, the second reflecting electrode, the 3rd reflecting electrode towards the surface of liquid crystal layer at described semiconductor chip, described the first reflecting electrode is electrically connected with described the first switch, and described the first reflecting electrode is light reflection face towards the surface of liquid crystal layer; Described the second reflecting electrode is electrically connected with described second switch, and described the second reflecting electrode is light reflection face towards the surface of liquid crystal layer; Described the 3rd reflecting electrode is electrically connected with described the 3rd switch, and described the 3rd reflecting electrode is light reflection face towards the surface of liquid crystal layer, described the 3rd reflecting electrode and the first reflecting electrode, the mutual electrical insulation of the second reflecting electrode;
Above the light reflection face of described the first reflecting electrode, forming the first optical filtering electrode described in the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
Above the light emission face of described the second reflecting electrode, form the second optical filtering electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
Above the light emission face of described the 3rd reflecting electrode, form the 3rd optical filtering electrode, described the 3rd optical filtering electrode is semi-transparent metallic film, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light.
The method for making of 13. silicon-based liquid crystal display units as claimed in claim 12, it is characterized in that, described semi-transparent metallic film material is metal, and thickness range is 10～500 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
The method for making of 14. silicon-based liquid crystal display units as claimed in claim 12, it is characterized in that, before forming the first optical filtering electrode, also comprise: on the light reflection surface of described the first reflecting electrode, form the step of the first insulation course, the thickness of described the first insulation course equals 1/4 odd-multiple of described the first wavelength of light.
The method for making of 15. silicon-based liquid crystal display units as claimed in claim 14, is characterized in that, described the first insulation course material is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The method for making of 16. silicon-based liquid crystal display units as claimed in claim 12, it is characterized in that, before formation the second optical filtering electrode, also comprise: on the light reflection surface of described the second reflecting electrode, form the step of the second insulation course, the thickness of described the second insulation course equals 1/4 odd-multiple of described the second wavelength of light.
17. silicon-based liquid crystal display units as claimed in claim 16, is characterized in that, the material of described the second insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The method for making of 18. silicon-based liquid crystal display units as claimed in claim 12, it is characterized in that, also comprise: before formation the 3rd optical filtering electrode, also comprise: on the light reflection surface of described the 3rd reflecting electrode, form the step of the 3rd insulation course, the thickness of described the 3rd insulation course equals 1/4 odd-multiple of described the 3rd wavelength of light.
The method for making of 19. silicon-based liquid crystal display units as claimed in claim 18, is characterized in that, the material of described the 3rd insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The colorful filter structure of 20. 1 kinds of silicon-based liquid crystal display units, is characterized in that, comprising:
Semiconductor chip;
The first reflecting electrode, is positioned at described surface of semiconductor chip, and described the first reflecting electrode has light reflection face away from the surface of semiconductor chip;
The second reflecting electrode, is positioned at described surface of semiconductor chip, and described the second reflecting electrode has light reflection face away from the surface of semiconductor chip;
The 3rd reflecting electrode, is positioned at described surface of semiconductor chip, and described the 3rd reflecting electrode has light reflection face away from the surface of semiconductor chip, described the 3rd reflecting electrode and the first reflecting electrode and the second reflecting electrode mutually insulated;
The first optical filtering electrode, the corresponding setting of light reflection face with the first reflecting electrode, described the first optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the first optical filtering electrode and described the first reflecting electrode is 1/4 odd-multiple of the first wavelength of light;
The second optical filtering electrode, the corresponding setting of light reflection face with the second reflecting electrode, described the second optical filtering electrode is semi-transparent metallic film, and the distance of the light reflection face of described the second optical filtering electrode and described the second reflecting electrode is 1/4 odd-multiple of the second wavelength of light;
The 3rd optical filtering electrode, the corresponding setting of light reflection face with the 3rd reflecting electrode, the distance of the light reflection face of described the 3rd optical filtering electrode and described the 3rd reflecting electrode is 1/4 odd-multiple of the 3rd wavelength of light, described the 3rd optical filtering electrode and described the first optical filtering electrode, the second optical filtering electrode electrical insulation, described the first light, the second light, the 3rd light are three primary colours light or are added secondary colours light.
The colorful filter structure of 21. silicon-based liquid crystal display units as claimed in claim 20, is characterized in that, described the first optical filtering electrode is electrically connected with the first reflecting electrode.
The colorful filter structure of 22. silicon-based liquid crystal display units as claimed in claim 20, is characterized in that, described the second optical filtering electrode is electrically connected with the second reflecting electrode.
The colorful filter structure of 23. silicon-based liquid crystal display units as claimed in claim 20, is characterized in that, described the 3rd optical filtering electrode is electrically connected with the 3rd reflecting electrode.
The colorful filter structure of 24. silicon-based liquid crystal display units as claimed in claim 20, it is characterized in that, also comprise: the first insulation course, between described the first optical filtering electrode and the first reflecting electrode, the thickness of described the first insulation course equals 1/4 odd-multiple of described the first wavelength of light.
The colorful filter structure of 25. silicon-based liquid crystal display units as claimed in claim 24, is characterized in that, described the first insulation course material is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The colorful filter structure of 26. silicon-based liquid crystal display units as claimed in claim 20, it is characterized in that, also comprise: the second insulation course, between described the second optical filtering electrode and the second reflecting electrode, the thickness of described the second insulation course equals 1/4 odd-multiple of described the second wavelength of light.
The colorful filter structure of 27. silicon-based liquid crystal display units as claimed in claim 26, is characterized in that, the material of described the second insulation course is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The colorful filter structure of 28. silicon-based liquid crystal display units as claimed in claim 27, it is characterized in that, also comprise: the 3rd insulation course, between described the 3rd optical filtering electrode and the 3rd reflecting electrode, the thickness of described the 3rd insulation course equals 1/4 odd-multiple of described the 3rd wavelength of light.
The colorful filter structure of 29. silicon-based liquid crystal display units as claimed in claim 20, it is characterized in that, the material of described semi-transparent film is metal, and its thickness range is 10～500 dusts, and described metal can be silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
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