CN102544133B - Semiconductor solar battery based on interface polaron effect and method for preparing semiconductor solar battery - Google Patents
Semiconductor solar battery based on interface polaron effect and method for preparing semiconductor solar battery Download PDFInfo
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- CN102544133B CN102544133B CN201210028953.XA CN201210028953A CN102544133B CN 102544133 B CN102544133 B CN 102544133B CN 201210028953 A CN201210028953 A CN 201210028953A CN 102544133 B CN102544133 B CN 102544133B
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Abstract
The invention discloses a semiconductor solar battery based on an interface polaron effect and a method for preparing the semiconductor solar battery. The semiconductor solar battery has a central symmetry structure which consists of two pieces of conductive glass of the same size and a polaron oxide thin film, wherein the polaron oxide thin film is sandwiched between the two pieces of conductive glass and used for separating the two pieces of conductive glass; a conductive film is arranged on one face of each piece of conductive glass, and the face is adjacent to the polaron oxide thin film; the two pieces of conductive glass are arranged in a staggered mode; the edge of one end of each piece of conductive glass is aligned with the edge of the polaron oxide thin film, and the other end of the conductive glass is protruded on the polaron oxide thin film; the conductive films, protruded on the polaron oxide thin film, of the two pieces of conductive glass are respectively connected with a positive wire and a negative wire of a battery; and the polaron oxide thin film is prepared by grinding polaron oxide, coating the polaron oxide on the conductive glass and then performing heat treatment. A manufacturing process for the semiconductor solar battery is simple. The semiconductor solar battery is applicable to large-scale production and has the advantages of low material cost, high stability, no environmental pollution, simple manufacturing process, high elemental abundance and the like.
Description
Technical field
The present invention relates to a kind of semiconductor solar cell, specifically a kind of semiconductor solar cell and preparation method based on interface polaron effect.
Background technology
Photovoltaic effect has four kinds of common generation mechanisms, i.e. Schottky barrier mechanism, p-n junction mechanism, heterojunction mechanism and exciton mechanism.Existing solar cell all utilizes above-mentioned one or more photovoltaic mechanism to realize opto-electronic conversion.For example silicon solar cell is to utilize p-n junction mechanism, and organic solar batteries is mainly to utilize exciton mechanism.For the semi-conducting material of solar cell, modal is silicon (comprising monocrystalline, polycrystalline, amorphous), next is the multi-element compounds such as GaAs, cadmium sulfide, copper indium diselenide, is the organic material such as dye molecule, polymer again, and as oxides such as the titanium dioxide of electrode.At present, the solar cells such as silicon, film, dye sensitization and polymer, at aspects such as conversion efficiency, cost of material, stability, environmental pollution, manufacture craft, elemental abundances, all have limitation separately.For example, monocrystalline silicon battery conversion efficiency is the highest, technical maturity, but cost of material is very high; Amorphous silicon thin-film solar cell cost is low, conversion efficiency is higher, but stability is not high; Cadmium sulphide membrane battery conversion efficiency is higher, be easy to large-scale production, but cadmium has severe toxicity, can cause serious environmental pollution; Copper, indium and selenium film battery conversion efficiency is higher, cheap, technique is simple, but indium and selenium are low-abundance elements, and material source is a problem; DSSC price is low, efficiency is higher, but complex process, poor stability; Polymer solar battery price is low, technique is simple, but efficiency is low, still in the research and development stage.
In sum, in solar photovoltaic conversion technical field, explore new photovoltaic mechanism, develop new photovoltaic material, for improving conversion efficiency of solar cell, reduce cost of material, reduce environmental pollution, simplify production technology, guaranteeing stability etc., there is important commercial Application and research value.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of semiconductor solar cell and preparation method based on interface polaron effect, there is new photovoltaic effect mechanism of production, contribute to the novel semi-conductor oxide solar cell that developing low-cost, zero is polluted, technique is simple, stability is high.
The present invention for solving the problems of the technologies described above adopted technical scheme is: a kind of semiconductor solar cell based on interface polaron effect, form centrosymmetric structure by two identical electro-conductive glass and one deck polaron sulls of size, polaron sull is clipped between two electro-conductive glass, and two electro-conductive glass are separated, the one side that electro-conductive glass is adjacent with polaron sull has conducting film, the setting of staggering of two electro-conductive glass, one end margin of electro-conductive glass and polaron sull justified margin, the other end protrudes from polaron sull, the conducting film that two electro-conductive glass protrude from polaron sull part respectively with battery just, negative wire connects.
Described polaron oxide is red schorl phase titanium dioxide, iron oxide or tungsten oxide.
The preparation method of the described semiconductor solar cell based on interface polaron effect, adopts electro-conductive glass that two sizes are identical as electrode, adopts polaron oxide as polaron semi-conducting material, and preparation process is:
Step 1, polaron oxide is put into mill, grind 1-1.5 hours take acetone as solvent, guarantee that particle scale is less than 10 microns.
Step 2, get a slice electro-conductive glass, be provided with one of the conducting film placement that faces up, then along edge Continuous pressing device for stereo-pattern on conducting film of its one end, the adhesive tape gross thickness of pasting is 10-100 micron, polaron oxide mixed liquor ground step 1 is evenly spread upon on the conducting film of this electro-conductive glass, control smearing thickness, make polaron oxide coating equal with adhesive tape.
Step 3, after the acetone volatilization in polaron oxide coating, separately get an electro-conductive glass, be provided with one of the conducting film setting that faces down, and the edge that makes its one end and the polaron oxide coating justified margin that posts adhesive tape one side, this electro-conductive glass is covered on polaron oxide coating, polaron oxide coating is clipped between the conducting film of two electro-conductive glass, and two electro-conductive glass protrude from the part of polaron oxide coating as the positive and negative electrode lead-in wire terminals of battery.
Step 4, throw off the adhesive tape on electro-conductive glass, two electro-conductive glass are put into Muffle furnace together with the polaron oxide coating being clipped in the middle heat-treats, polaron oxide coating is made to polaron sull, heat treatment method is: be warming up to gradually 300 ℃ with the heating rate of 1 ℃/min, then 300 ℃ of insulations 60 minutes, naturally be cooled to afterwards room temperature, heat treatment finishes rear taking-up, makes solar cell again.
Wherein electro-conductive glass is as electrode material, and polaron sull is as the semi-conducting material of extinction.For the battery of this structure, the unique source that produces photovoltage and electric current is exactly the difference of battery both sides illuminance.For inorganic oxide semi-conducting material, its exciton effect is generally very weak, can not consider.But some special oxide material, as red schorl phase titanium dioxide and tungsten oxide etc., has very strong polaron effect, in its electronic band structure, having had more polaron can be with.For the oxide material with polaron effect, in illumination side interface, the greatest differences in polaron and light induced electron transfer rate will cause battery to produce the photovoltage of hundreds of millivolts; The maximum theoretical of its open circuit voltage is that the energy gap of semiconductor conduction band and polaron energy interband is poor.The new photovoltaic mechanism based on interface polaron effect that the present invention that Here it is proposes.
The invention has the beneficial effects as follows: polaron oxide semiconductor, as titanium oxide, iron oxide, tungsten oxide etc., mostly be the material that price is low, stability is high, non-toxic, elemental abundance is high, be used in solar cell, can reduce cost of material, reduce environmental pollution, guarantee stability etc.In addition, polaron oxide semiconductor solar cell making process is very simple, is applicable to large-scale production.Therefore, polar beggar oxide semiconductor solar cell has the advantage of the aspects such as cost of material is low, good stability, non-environmental-pollution, manufacture craft is simple, elemental abundance is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of solar cell of the present invention.
Mark in figure: 1, electro-conductive glass, 2, conducting film, 3, polaron sull, 4, anode, 5, battery cathode, 6, sunlight incident direction.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Figure 1 shows that the structural representation of the semiconductor solar cell based on interface polaron effect that the present invention makes, this battery forms centrosymmetric structure by two identical electro-conductive glass 1 and one deck polaron sulls 3 of size, polaron sull 3 is clipped between two electro-conductive glass 1, and two electro-conductive glass 1 are separated, the one side that electro-conductive glass 1 is adjacent with polaron sull 3 has conducting film 2, the setting of staggering of two electro-conductive glass 1, one end margin of electro-conductive glass 1 and polaron sull 3 justified margins, the other end protrudes from polaron sull 3, the conducting film 2 that two electro-conductive glass 1 protrude from polaron sull 3 parts respectively with battery just, negative wire connects.
Solar cell conductive glass 1 of the present invention is as electrode, and electro-conductive glass 1 is made up of plate glass and conducting film, and conducting film is arranged on a surface of plate glass.Semiconductor light absorbent is made up of polaron sull 3, under the irradiation of the sunlight of sunlight incident direction 6, between anode 4 and battery cathode 5, can produce voltage and current.
The preparation method of the semiconductor solar cell based on interface polaron effect of the present invention is: adopt electro-conductive glass that two sizes are identical as electrode, adopt polaron oxide as polaron semi-conducting material, preparation process is:
Step 1, grinding polycrystalline polaron oxide raw material, material purity is 99.9%.Polaron oxide is put into mill and grind 1-1.5 hours, the granularity of oxide reaches below 10 microns, and guarantees uniform particles.When grinding, take acetone as solvent, the addition of acetone is according to conventional abrasive solvents consumption.
Step 2, get a slice electro-conductive glass, be provided with one of the conducting film placement that faces up, one end of this electro-conductive glass is as reserved electrode, along edge Continuous pressing device for stereo-pattern on conducting film of this reserved end, the adhesive tape gross thickness of pasting is 10-100 micron, polaron oxide mixed liquor ground step 1 is evenly spread upon on the conducting film of this electro-conductive glass, control smearing thickness, make polaron oxide coating equal with adhesive tape; The adhesive tape gross thickness of pasting is the thickness of sull, and the thickness of sull is feasible in 10-100 micrometer range.
Step 3, after the acetone volatilization in polaron oxide coating, separately get an electro-conductive glass, be provided with one of the conducting film setting that faces down, and the edge that makes its one end and the polaron oxide coating justified margin that posts adhesive tape one side, this electro-conductive glass is covered on polaron oxide coating, polaron oxide coating is clipped between the conducting film of two electro-conductive glass, according to the structure shown in Fig. 1, two electro-conductive glass are pressed into battery, two electro-conductive glass protrude from the part of polaron oxide coating as the positive and negative electrode lead-in wire terminals of battery.After compressing, can two electro-conductive glass be fixed with usual manner, for example, adopt any feasible mode such as fixture, fixture.
Step 4, throw off the adhesive tape on electro-conductive glass, two electro-conductive glass are put into Muffle furnace together with the polaron oxide coating being clipped in the middle heat-treats, by heat treatment, polaron oxide coating is made to polaron sull, heat treatment method is: be warming up to gradually 300 ℃ with the heating rate of 1 ℃/min, then 300 ℃ of insulations 60 minutes, naturally be cooled to afterwards room temperature, heat treatment finishes rear taking-up, makes solar cell again.
In the present invention, polaron oxide can adopt red schorl phase titanium dioxide, iron oxide or tungsten oxide etc. to have the oxide of polaron effect.Wherein preferably adopt red schorl phase titanium dioxide, the solar cell stability that red schorl phase titanium dioxide is made is better, and photovoltage is higher.The solar cell stability that red schorl phase titanium dioxide is made is better, and photovoltage is higher.Red schorl phase titanium dioxide is a kind of typical polaron semiconductor, almost there is no exciton effect under normal temperature.Under illumination condition, if this battery shows significant photovoltage, its photovoltage can not originate from exciton mechanism, and can only originate from polaron mechanism.
According to the method described above, adopt red schorl phase titanium dioxide as polaron semi-conducting material, making thickness is the titanium deoxid film of 50 microns (being the adhesive tape control of 50 microns by known thickness), and electro-conductive glass is selected ITO.Show through measuring, this polaron titanium dioxide solar cell is at AM1.5 standard solar light irradiation (1000 W/m
2) under, illumination side is battery cathode, and reverse side is anode, and between anode and battery cathode, maximum open circuit voltage is 210 millivolts, 1 microampere/square centimeter of maximum short circuit current, fill factor, curve factor is about 50%, and photoelectric conversion efficiency is about 10
-6.If change direction of illumination, the output voltage of this battery reindexing thereupon; If same illumination is accepted in battery both sides, output voltage is zero.Therefore, experiment confirms, the photovoltaic mechanism establishment based on interface polaron effect.Although this cell photoelectric stream is less, conversion efficiency is low, by the modification of oxide material, can significantly improve the size of photoelectric current; If the symmetrical structure of battery is changed into asymmetrical, and and other semi-conducting material be coupled, its photoelectric conversion efficiency will obtain further significantly promoting, and even can compare favourably with existing solar cell.
Claims (1)
1. the semiconductor solar cell based on interface polaron effect, it is characterized in that: form centrosymmetric structure by two identical electro-conductive glass (1) and one deck polaron sulls (3) of size, polaron sull (3) is clipped between two electro-conductive glass (1), and two electro-conductive glass (1) are separated, the one side that electro-conductive glass (1) is adjacent with polaron sull (3) has conducting film (2), two electro-conductive glass (1) setting of staggering, one end margin of electro-conductive glass (1) and polaron sull (3) justified margin, the other end protrudes from polaron sull (3), the conducting film (2) that two electro-conductive glass (1) protrude from polaron sull (3) part respectively with battery just, negative wire connects,
Described polaron oxide is red schorl phase titanium dioxide, iron oxide or tungsten oxide;
The preparation method of the described semiconductor solar cell based on interface polaron effect is: adopt electro-conductive glass that two sizes are identical as electrode, adopt polaron oxide as polaron semi-conducting material, preparation process is:
Step 1, polaron oxide is put into mill, grind 1-1.5 hours take acetone as solvent, make the granularity of oxide be less than 10 microns;
Step 2, get a slice electro-conductive glass, be provided with one of the conducting film placement that faces up, then along edge Continuous pressing device for stereo-pattern on conducting film of its one end, the adhesive tape gross thickness of pasting is 10-100 micron, polaron oxide mixed liquor ground step 1 is evenly spread upon on the conducting film of this electro-conductive glass, control smearing thickness, make polaron oxide coating equal with adhesive tape;
Step 3, after the acetone volatilization in polaron oxide coating, separately get an electro-conductive glass, be provided with one of the conducting film setting that faces down, and the edge that makes its one end and the polaron oxide coating justified margin that posts adhesive tape one side, this electro-conductive glass is covered on polaron oxide coating, polaron oxide coating is clipped between the conducting film of two electro-conductive glass, and two electro-conductive glass protrude from the part of polaron oxide coating as the positive and negative electrode lead-in wire terminals of battery;
Step 4, throw off the adhesive tape on electro-conductive glass, two electro-conductive glass are put into Muffle furnace together with the polaron oxide coating being clipped in the middle heat-treats, polaron oxide coating is made to polaron sull, heat treatment method is: be warming up to gradually 300 ℃ with the heating rate of 1 ℃/min, then 300 ℃ of insulations 60 minutes, naturally be cooled to afterwards room temperature, heat treatment finishes rear taking-up, makes solar cell again.
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| CN104393108A (en) * | 2014-10-27 | 2015-03-04 | 中国科学院半导体研究所 | Strong polarization device for high-efficiency nano dipole solar cell and method |
| CN109560150B (en) * | 2018-12-06 | 2020-03-24 | 湖北大学 | M-surface BeZnOS-based non-P-N junction type transparent thin-film solar cell and preparation method thereof |
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| US20100163102A1 (en) * | 2008-12-30 | 2010-07-01 | Taiwan Textile Research Institute | Solar cell and the method of manufacturing thereof |
| ES2350222B1 (en) * | 2009-05-21 | 2011-11-08 | Consejo Superior De Investigaciones Cientificas (Csic)9 82,14% | TIO2 NANOCRISTALINE GIVEN WITH NITROGEN FOR PHOTOVOLTAIC APPLICATIONS. |
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Inventor after: Li Guoling Inventor after: Li Liben Inventor after: Wang Dandan Inventor after: Cao Jingxiao Inventor after: Wang Zhaowu Inventor before: Li Guoling Inventor before: Li Liben |
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