CN102540755A - 曝光装置、曝光方法以及显示用面板基板的制造方法 - Google Patents

曝光装置、曝光方法以及显示用面板基板的制造方法 Download PDF

Info

Publication number
CN102540755A
CN102540755A CN2011103560872A CN201110356087A CN102540755A CN 102540755 A CN102540755 A CN 102540755A CN 2011103560872 A CN2011103560872 A CN 2011103560872A CN 201110356087 A CN201110356087 A CN 201110356087A CN 102540755 A CN102540755 A CN 102540755A
Authority
CN
China
Prior art keywords
beam irradiation
irradiation device
optical system
mirror
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011103560872A
Other languages
English (en)
Chinese (zh)
Inventor
手冢秀和
林知明
吉田稔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN102540755A publication Critical patent/CN102540755A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
CN2011103560872A 2010-12-07 2011-11-08 曝光装置、曝光方法以及显示用面板基板的制造方法 Pending CN102540755A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010273043A JP5611016B2 (ja) 2010-12-07 2010-12-07 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2010-273043 2010-12-07

Publications (1)

Publication Number Publication Date
CN102540755A true CN102540755A (zh) 2012-07-04

Family

ID=46347924

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011103560872A Pending CN102540755A (zh) 2010-12-07 2011-11-08 曝光装置、曝光方法以及显示用面板基板的制造方法

Country Status (4)

Country Link
JP (1) JP5611016B2 (ja)
KR (1) KR101375886B1 (ja)
CN (1) CN102540755A (ja)
TW (1) TW201224679A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105739184A (zh) * 2014-12-07 2016-07-06 上海微电子装备有限公司 配向装置、配向系统及配向方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014146012A (ja) * 2013-01-30 2014-08-14 Hitachi High-Technologies Corp パターン形成方法及び装置
EP4139735A1 (en) * 2020-04-23 2023-03-01 Dolby Laboratories Licensing Corp. Projection system and method with adjustable angle illumination
EP4232863A1 (en) * 2020-10-23 2023-08-30 Dolby Laboratories Licensing Corporation Projection system and method with fold mirror and integrating rod adjustment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002374025A (ja) * 2002-04-01 2002-12-26 Komatsu Ltd 狭帯域レーザ装置
JP2003262781A (ja) * 2002-03-08 2003-09-19 Konica Corp 画像記録装置におけるミラー角度調整機構
JP2005266779A (ja) * 2004-02-18 2005-09-29 Fuji Photo Film Co Ltd 露光装置及び方法
CN101807006A (zh) * 2009-02-18 2010-08-18 株式会社日立高科技 曝光装置、曝光方法以及显示用面板基板的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1184098A (ja) * 1997-07-11 1999-03-26 Canon Inc Ｘ線照明装置およびｘ線照明方法、ｘ線露光装置ならびにデバイス製造方法
SE519397C2 (sv) * 1998-12-16 2003-02-25 Micronic Laser Systems Ab System och metod för mikrolitografiskt ritande av högprecisionsmönster
JP2005183736A (ja) * 2003-12-19 2005-07-07 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2008233112A (ja) * 2005-06-22 2008-10-02 Fujifilm Holdings Corp カラーフィルタの製造方法、及びカラーフィルタ並びに表示装置
JP2007199532A (ja) * 2006-01-27 2007-08-09 Fujifilm Corp パターン形成方法
JP4863948B2 (ja) * 2007-07-30 2012-01-25 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
US7999939B2 (en) * 2007-08-17 2011-08-16 Asml Holding N.V. Real time telecentricity measurement
JPWO2009078223A1 (ja) * 2007-12-17 2011-04-28 株式会社ニコン 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
JP5376494B2 (ja) * 2008-10-08 2013-12-25 大日本スクリーン製造株式会社 描画装置および描画方法
JP2010182933A (ja) * 2009-02-06 2010-08-19 Dainippon Screen Mfg Co Ltd 描画装置および描画方法
JP2012118375A (ja) * 2010-12-02 2012-06-21 Olympus Corp パターン投影装置およびレーザ加工装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003262781A (ja) * 2002-03-08 2003-09-19 Konica Corp 画像記録装置におけるミラー角度調整機構
JP2002374025A (ja) * 2002-04-01 2002-12-26 Komatsu Ltd 狭帯域レーザ装置
JP2005266779A (ja) * 2004-02-18 2005-09-29 Fuji Photo Film Co Ltd 露光装置及び方法
CN101807006A (zh) * 2009-02-18 2010-08-18 株式会社日立高科技 曝光装置、曝光方法以及显示用面板基板的制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105739184A (zh) * 2014-12-07 2016-07-06 上海微电子装备有限公司 配向装置、配向系统及配向方法
CN105739184B (zh) * 2014-12-07 2019-01-29 上海微电子装备（集团）股份有限公司 配向装置、配向系统及配向方法

Also Published As

Publication number Publication date
JP2012123128A (ja) 2012-06-28
TW201224679A (en) 2012-06-16
JP5611016B2 (ja) 2014-10-22
KR101375886B1 (ko) 2014-03-18
KR20120063427A (ko) 2012-06-15

Similar Documents

Publication Publication Date Title
CN103293874A (zh) 曝光装置、曝光方法及显示用面板基板的制造方法
US20060215138A1 (en) Laser beam pattern generator with a two-axis scan mirror
CN102540755A (zh) 曝光装置、曝光方法以及显示用面板基板的制造方法
CN101807006A (zh) 曝光装置、曝光方法以及显示用面板基板的制造方法
US20100060878A1 (en) Exposure appartus, exposure method and method of manufacturing display panel substrate
CN102799073A (zh) 曝光装置及曝光、检查方法及显示用面板基板的制造方法
JP5473880B2 (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5219982B2 (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
KR100799500B1 (ko) 폴리곤스캐너와 갈바노미터스캐너를 결합한 드라이에칭장치
JP2011002512A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2011007974A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2012038759A (ja) 露光装置及び露光方法並びに表示用パネル基板製造装置及び表示用パネル基板の製造方法
JP5689535B2 (ja) リソグラフィ装置及びデバイス製造方法
JP5355245B2 (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5305967B2 (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5416867B2 (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2011237684A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
US20100040964A1 (en) Exposure apparatus, exposure method and method of manufacturing display panel substrate
JP2013197568A (ja) 露光装置及び露光方法
JP5456607B2 (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2013054262A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
US20100103397A1 (en) Exposure apparatus, exposure method, and method of manufacturing display panel substrate
KR101222204B1 (ko) 노광 장치, 노광 방법 및 표시용 패널 기판의 제조 방법
JP2011150053A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2011180297A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120704