CN102540337A - Manufacturing method for PLC (planar lightwave circuit) optical device - Google Patents
Manufacturing method for PLC (planar lightwave circuit) optical device Download PDFInfo
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- CN102540337A CN102540337A CN201010604200XA CN201010604200A CN102540337A CN 102540337 A CN102540337 A CN 102540337A CN 201010604200X A CN201010604200X A CN 201010604200XA CN 201010604200 A CN201010604200 A CN 201010604200A CN 102540337 A CN102540337 A CN 102540337A
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Abstract
The invention belongs to the technical field of planar lightwave circuit (PLC) splitters and specifically relates to a manufacturing method for optical waveguides, the manufacturing method comprises the following steps of: forming a layer of silicon dioxide on a silicon wafer; depositing photo resists; photo-etching to form patterns; forming an optical waveguide core layer with a high refractive index in a groove among the photo resists; curing the photo resists; and forming an upper film coating layer with low refractive index. The manufacturing method for the optical waveguides is simple in technological process, low in technical difficulty, low in raw material and production equipment requirement, low in production cost and easy to realize the industrialization scale production.
Description
Technical field
(Planar Lightwave Circuit, manufacturing approach PLC) is specifically related to a kind of method for manufacturing optical waveguide, belongs to PLC splitter technologies field to the present invention relates to a kind of planar light shunt.
Background technology
Current; The progressively expansion that FTTX (Optical Access Network) builds specifically will realize FTTC (Fiber To The Curb), FTTB (Fiber To The Building), FTTH (fiber-to-the-home front yard), FTTD (fiber to the desk), the integration of three networks multimedia transmission and PDS (comprehensive wiring system) schemes such as (voice network, data network, cable television networks).Build up Full Fibre Network, realize the continuing and reallocating of fiber optic network, also need the fiber-to-the-home purpose of the final completion of optical branching device in a large number except the various structure optical distribution cable of needs, leading in cable.
The PLC optical device is generally made on six kinds of materials, and they are: lithium niobate (LiNbO3), III-V family semiconducting compound, silicon dioxide (SiO
2), SOI (Silicon-on-Insulator, silicon-on-insulator), polymkeric substance (Polymer) and glass.Wherein, the lithium niobate waveguide is to form waveguide through diffusion Ti ion on lithium columbate crystal, and waveguiding structure is a diffused.The InP waveguide is to claim the end and under-clad layer with InP, is sandwich layer with InGaAsP, is top covering with InP or InP/ air, and waveguiding structure is for burying ridged or ridged.SiO 2 waveguide is to claim the end with the silicon chip, with the SiO of difference doping
2Material is sandwich layer and covering, and waveguiding structure is for burying rectangle.The SOI waveguide is on the SOI substrate, to make, and claims that the end, under-clad layer, sandwich layer and top covering material are respectively Si, SiO
2, Si and air, waveguiding structure is a ridged.Polymer waveguide is to claim the end with the silicon chip, is sandwich layer with the Polymer material of different levels of doping, and waveguiding structure is for burying rectangle.Glass waveguide is to form waveguide through diffusion Ag ion on glass material, and waveguiding structure is a diffused.In the PLC of above-mentioned six kinds of materials optical device, silicon dioxide optical waveguide has good optical, electricity, mechanical property and thermal stability, is considered to the integrated technological approaches that practical prospect is arranged most of passive light.At present, the technology of manufacturing silicon dioxide optical waveguide is generally:
1) adopts flame hydrolysis (FHD) or chemical vapor deposition method (CVD), growth one deck SiO on silicon chip 101
2, wherein Doping Phosphorus, boron ion are as optical waveguide under-clad layer 102.Continue to adopt FHD or CVD technology, regrowth one deck SiO on under-clad layer 102 then
2, as optical waveguide sandwich layer 103, doped germanium ion wherein, the refringence that acquisition needs, and the two-layer SiO of growth before making it through the annealing hardening process
2Become evenly fine and close, shown in Fig. 1 a;
2) deposit one deck photoresist 104, photoetching forms figure then, and the optical waveguide figure of needs is protected with photoresist.Adopt reactive ion etching (RIE) technology then, the silicon dioxide that non-optical waveguide is regional etches away, shown in Fig. 1 b;
3) remove photoresist, adopt FHD or CVD technology, on optical waveguide sandwich layer 103, cover one deck SiO again
2, wherein Doping Phosphorus, boron ion as optical waveguide top covering 105, through the annealing hardening process, make top covering SiO then
2Become evenly fine and close, shown in Fig. 1 c.
Aforesaid silicon dioxide optical waveguide technology is the main flow manufacturing technology of PLC optical device product at present, commonplace in the world employing.But problem is present in equipment and drops into height, high, the starting material requirement high (all adopting imported materials and items) of maintenance cost, and this technological manufacture difficulty is big.
Summary of the invention
In view of this, the objective of the invention is to propose a kind of new low method for manufacturing optical waveguide of technical difficulty, can under lower cost input, realize the industrial large-scale production of fiber waveguide device.
For reaching above-mentioned purpose of the present invention, the present invention proposes a kind of manufacturing approach of fiber waveguide device, specifically comprise:
A silicon substrate is provided;
The layer of silicon dioxide of on said silicon substrate, growing;
The deposit photoresist;
Photoetching forms figure;
Form high refractive index layer;
Return and carve the said high refractive index layer of part, the said high index of refraction layer material in the groove between the photoresist is removed and be retained in to the said high refractive index layer on the photoresist, with the formation high refractive index core;
Photoresist is solidified;
Form the low refractive index film top covering.
Wherein, in the manufacturing approach of above-mentioned fiber waveguide device, the thickness range of said silicon dioxide is the 2-30 micron; The thickness range of said photoresist is the 5-15 micron; The thickness range of described high refractive index core is the 2-20 micron, and its width range is the 2-30 micron.
Method for manufacturing optical waveguide technological process proposed by the invention is simple, and technical difficulty is low, and starting material and production equipment require low, have reduced production cost, are easy to realize industrial large-scale production.
Description of drawings
Fig. 1 a to Fig. 1 c is the manufacturing process flow diagram of the silicon dioxide optical waveguide of prior art.
Fig. 2 a is the synoptic diagram of an embodiment of optical waveguide provided by the present invention.
Fig. 2 b is that optical waveguide shown in Fig. 2 a is along the sectional view of CD direction.
Fig. 3 a to Fig. 3 e is the embodiment process chart of manufacturing provided by the present invention optical waveguide shown in Fig. 2 b.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation, in the drawings, explanation is for ease amplified or has been dwindled the thickness of layer with the zone, shown in size do not represent physical size.Although the physical size that reflects device that these figure can not entirely accurate, their zones that still has been complete reflection and form the mutual alignment between the structure, particularly form between the structure up and down and neighbouring relations.Simultaneously in the following description, employed term substrate is appreciated that to be to comprise the just Semiconductor substrate in processes, possibly comprise other prepared thin layer above that.
Fig. 2 a is the synoptic diagram of an embodiment of optical waveguide provided by the present invention, and wherein direction shown in the AB is the direction of propagation of light in optical waveguide.Fig. 2 b is that optical waveguide shown in Fig. 2 a is along the sectional view of CD direction.Shown in Fig. 2 b, this optical waveguide comprises waveguide core layer segment 204, the overlayer 205 of low-refraction and the lid 206 of quartz material that forms in a silicon substrate 201, the silicon dioxide layer 202 in formation on the silicon substrate 201, photoresist part 203, the groove between photoresist.
Fiber waveguide device shown in Fig. 2 b proposed by the invention can be through a lot of method manufacturings, and below what narrated is the technological process of manufacturing provided by the present invention embodiment of fiber waveguide device shown in Fig. 2 b.
At first, a silicon chip 301 of using as substrate is provided, its thickness range is preferably the 1.20-1.30 millimeter.Then, the method that adopts flame hydrolysis (FHD) or chemical vapor deposition method (CVD) is at growth one deck SiO2 on silicon chip 301, and wherein Doping Phosphorus, boron ion are as optical waveguide under-clad layer 302, shown in Fig. 3 a.
Next, deposit one layer thickness is about the negative photoresist 303 of 5-15 micron on SiO2 layer 302, and photoetching forms groove 304 then, shown in Fig. 3 b.
Next, under the condition of 3000rpm, adopt the method spin coating of spin coating to obtain the high refractive index film of about 2 micron thick of one deck in 40 seconds, and in spin-on material the doped germanium ion to improve its refractive index.Utilize the formed high refractive index film of buffered hydrofluoric acid etching liquid (BHF) etching then, the high index of refraction membrane material in the groove 304 is removed and only be retained in to the high refractive index film on the photoresist 303, with formation high refractive index core 305, shown in Fig. 3 c.
After optical waveguide sandwich layer 305 forms, photoresist 303 is baked and banked up with earth curing, the method that continues the employing spin coating then forms the overlayer 306 of the low-refraction of the about 2-20 micron thick of one deck, shown in Fig. 3 d.
At last, piezoid is bonded on the overlayer 306 of low-refraction as lid 307, shown in Fig. 3 e, the thickness of piezoid 307 is preferably the 1.20-1.30 millimeter.
As stated, under the situation that does not depart from spirit and scope of the invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except like enclosed claim limited, the invention is not restricted at the instantiation described in the instructions.
Claims (4)
1. the manufacturing approach of a fiber waveguide device comprises:
A silicon substrate is provided;
The layer of silicon dioxide of on said silicon substrate, growing;
The deposit photoresist;
Photoetching forms figure;
Form high refractive index layer;
Return and carve the said high refractive index layer of part, the said high index of refraction layer material in the groove between the photoresist is removed and be retained in to the said high refractive index layer on the photoresist, with the formation high refractive index core;
Photoresist is solidified;
Form the low refractive index film top covering.
2. the manufacturing approach of fiber waveguide device according to claim 1 is characterized in that, the thickness range of said silicon dioxide is the 2-30 micron.
3. the manufacturing approach of fiber waveguide device according to claim 1 is characterized in that, the thickness range of said photoresist is the 5-15 micron.
4. the manufacturing approach of fiber waveguide device according to claim 1 is characterized in that, the thickness range of described high refractive index core is the 2-20 micron, and its width range is the 2-30 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010604200XA CN102540337A (en) | 2010-12-24 | 2010-12-24 | Manufacturing method for PLC (planar lightwave circuit) optical device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010604200XA CN102540337A (en) | 2010-12-24 | 2010-12-24 | Manufacturing method for PLC (planar lightwave circuit) optical device |
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| CN102540337A true CN102540337A (en) | 2012-07-04 |
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| CN201010604200XA Pending CN102540337A (en) | 2010-12-24 | 2010-12-24 | Manufacturing method for PLC (planar lightwave circuit) optical device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108303766A (en) * | 2018-01-12 | 2018-07-20 | 浙江富春江光电科技有限公司 | A kind of planar optical waveguide wafer production technology method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020137247A1 (en) * | 2001-03-21 | 2002-09-26 | Leon Francisco A. | Method of fabrication to sharpen corners of Y-branches in integrated optical components and other micro-devices |
| CN1438500A (en) * | 2003-03-04 | 2003-08-27 | 山东大学 | Method for preparing ridge-shape light-wave-guide of optical crystal by ion injection method |
| US20040184756A1 (en) * | 2003-03-20 | 2004-09-23 | Tdk Corporation | Method of manufacturing optical waveguide and the optical waveguide |
| CN1729415A (en) * | 2002-12-24 | 2006-02-01 | 3M创新有限公司 | Process for fabrication of optical waveguides |
| CN101604054A (en) * | 2009-07-03 | 2009-12-16 | 今皓光电（昆山）有限公司 | The method for packing of PLC optical fiber splitter |
-
2010
- 2010-12-24 CN CN201010604200XA patent/CN102540337A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020137247A1 (en) * | 2001-03-21 | 2002-09-26 | Leon Francisco A. | Method of fabrication to sharpen corners of Y-branches in integrated optical components and other micro-devices |
| CN1729415A (en) * | 2002-12-24 | 2006-02-01 | 3M创新有限公司 | Process for fabrication of optical waveguides |
| CN1438500A (en) * | 2003-03-04 | 2003-08-27 | 山东大学 | Method for preparing ridge-shape light-wave-guide of optical crystal by ion injection method |
| US20040184756A1 (en) * | 2003-03-20 | 2004-09-23 | Tdk Corporation | Method of manufacturing optical waveguide and the optical waveguide |
| CN101604054A (en) * | 2009-07-03 | 2009-12-16 | 今皓光电（昆山）有限公司 | The method for packing of PLC optical fiber splitter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108303766A (en) * | 2018-01-12 | 2018-07-20 | 浙江富春江光电科技有限公司 | A kind of planar optical waveguide wafer production technology method |
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Application publication date: 20120704 |