CN102516873A - Silicon wafer polishing composition and preparation method thereof - Google Patents
Silicon wafer polishing composition and preparation method thereof Download PDFInfo
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- CN102516873A CN102516873A CN2011103250293A CN201110325029A CN102516873A CN 102516873 A CN102516873 A CN 102516873A CN 2011103250293 A CN2011103250293 A CN 2011103250293A CN 201110325029 A CN201110325029 A CN 201110325029A CN 102516873 A CN102516873 A CN 102516873A
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Abstract
The invention discloses a silicon wafer polishing composition and a preparation method thereof, and belongs to the field of chemically mechanical polishing (CMP). The silicon wafer polishing composition contains a grinding material, one or more alkaline compounds, 0.001 to 5 wt% of one or more water-soluble polymers, deionized water, 0.001 to 1 wt% of one or more polymer bridging agents and 0.001 to 0.5 wt% of one or more frictional factor conditioning agents, wherein the pH value of the silicon wafer polishing composition is in a range of 8 to 12. The silicon wafer polishing composition is especially suitable for silicon wafer polishing, can improve the stability of a polymer in slurry, can adjust a frictional factor between a silicon wafer surface and a polishing pad, can effectively inhibit the deposition of particles and a polymer, can reduce the scratches on the surface of a silicon wafer, can improve the uniformity of the quality of a polished silicon wafer surface, and can be washed away easily.
Description
Technical field
The present invention relates to chemically machinery polished (CMP) field, particularly a kind of polishing composition that is used for the silicon wafer finishing polish and preparation method thereof.
Background technology
Unicircuit (IC) is the technical foundation of information industry, is the core motivating force that promotes hi-tech development.Chemical Mechanical Polishing Technique can effectively be taken into account the overall situation and the local planeness of finished surface, and in VLSI was made, this technology was widely used in processing monocrystalline substrate.
Traditional CMP system is made up of following three parts: the silicon wafer clamping device of rotation, worktable, polishing fluid (slurry) supply system of carrying polishing pad.During polishing; The workpiece of rotation imposes on the polishing pad that rotates with worktable with certain pressure; Polishing fluid flows between workpiece and polishing pad, and produces chemical reaction at workpiece surface, and the chemical reactant that workpiece surface forms is removed by the mechanical friction effect of abrasive material.In the alternation procedure of chemical membrane and mechanical striping, remove layer of material as thin as a wafer through the chemistry and the acting in conjunction of machinery from workpiece surface, finally realize ultra-precision surface processing.
Usually; In industry in order to realize the polishing working accuracy of silicon wafer; Reach the technical indicator of unicircuit silicon wafer requirement, need carry out two step chemically machinery polisheds (CMP) (rough polishing and finishing polish), when silicon wafer surface is carried out step chemical mechanical polishing; Per step polishes employed polishing fluid and corresponding polishing technological conditions is all different, and the working accuracy that each step institute of pairing silicon wafer will reach is difference also.In the rough polishing step, remove silicon wafer cutting and the surface damage layer under residual of being shaped, be processed into minute surface, at last through silicon wafer being carried out " mist elimination " finishing polish, thereby reduce surface irregularity and other free tiny flaws to the full extent.
In actual production; The final finishing polish of silicon wafer is the decisive step of surface quality; Better silicon wafer surface and more high efficiency removal are the targets that novel silicon wafer fine polishing liquid is constantly pursued, and have adopted multiple mode to attempt both at home and abroad, and have obtained certain progress.
Patent 200610014414.5 discloses a kind of precise polishing solution of being made up of compounded abrasive, nonionogenic tenside, sequestrant, organic bases and deionized water that is used for silicon wafer; This polishing fluid has the advantages that fast, the no sodium ion of polishing speed stains, chip surface after polishing not damaged and cleaning easily.
Patent US2008/0127573A1 discloses a kind of compsn that is used for the silicon wafer finishing polish, and it contains abrasive material, pH regulator agent, water-soluble thickener, Acetylene gauge surface-active agent, heterocyclic amine and deionized water.This polishing fluid can reduce LLS defective, mist defective and the roughness of polishing back silicon wafer surface significantly.
Patent US5352277 discloses a kind of polishing fluid, and it contains colloidal silica, water soluble (CO) polymers and water-soluble salt, and this water-soluble salt is by a kind of Na, K and NH of being selected from
4Positively charged ion and a kind of Cl, F, NO of being selected from
3And ClO
4Negatively charged ion constitute, can realize being lower than the pressure release surface of the low surface roughness of 5nm.
Above method is obtaining certain effect aspect the control silicon wafer surface defect; But for the silicon single crystal finishing polish of requirements at the higher level, above method is in further control surface defective, residual and improve the wafer surface homogeneity and reduce and also have certain limitation aspect the frictional coefficient.
Summary of the invention
The invention provides a kind of deposition that improves frictional coefficient between stability, reduction surface and the polishing pad of polymkeric substance in slurry, suppresses particle and polymkeric substance; Reduce the cut of silicon wafer surface, the silicon wafer polishing compsn of silicon wafer surface quality uniformity after the raising finishing polish.
In order to realize above-mentioned target, the present invention has adopted polymkeric substance bridging agent and water-soluble polymers acting in conjunction, makes polymkeric substance in slurry, have fabulous stability, in addition, has also added the frictional coefficient regulator, reduces the frictional coefficient between silicon wafer and the polishing pad.
A kind of polishing composition that is used for the silicon wafer finishing polish; It comprises abrasive material, basic cpd and water; It is characterized in that: also comprise water-soluble polymers, polymkeric substance bridging agent and frictional coefficient regulator, wherein, the weight percentage of water-soluble polymers is 0.001～5wt%; The weight percentage of polymkeric substance bridging agent is 0.001～1wt%, and the weight percentage of frictional coefficient regulator is 0.001～0.5wt%.
Said water-soluble polymers is one or more in the hydroxypropylcellulose of Natvosol or lipid modification of guar gum, XG 550, sodium-alginate, CMS, FM, CMC 99.5, sulfonic acid TKK 021, Tylose CH 50, methylcellulose gum, carboxyethyl methylphosphinate Mierocrystalline cellulose, Vltra tears, hydroxy butyl methyl cellulose, Natvosol, lipid modification.
Said polymkeric substance bridging agent is the polymkeric substance of poly-hydroxy, many carboxyls and/or polyether base, is selected from Z 150PH, Z 150PH and polystyrene block copolymer, polyoxyethylene glycol, polyoxyethylene, polyoxyethylene and ethylene oxide-propylene oxide block copolymer, polymethyl acrylic acid, ammonium polymethacrylate salt, polymethyl acid potassium salt, ROHM, ammonium polyacrylate salt, ROHM sylvite, polyamic acid, polyamic acid ammonium salt, polyamic acid sylvite, the polyoxyethylene nonylphenol one or more.
Said frictional coefficient regulator is one or more of Witco 1298 Soft Acid, dodecyl sodium sulfonate, Succinic Acid di-isooctyl sulfonic acid, AEO, AEO sulfuric acid or AEO carboxylic acid.
Said basic cpd is a Pottasium Hydroxide; Sodium hydroxide; Volatile salt; Bicarbonate of ammonia; Saleratus; Salt of wormwood; Sodium hydrogencarbonate; Yellow soda ash; TMAH; Ammoniacal liquor; Methylamine; Dimethyl amine; Trimethylamine; Ethylamine; DIETHANOL AMINE; Triethylamine; Yi Bingchunan; Aminopropanol; Tetraethyl-amine; Thanomin; Diethyl triamine; The triethyl tetramine; AEEA; Hexamethylene-diamine; NSC 446; Triethylenetetramine (TETA); In Piperazine anhydrous or the Uricida one or more.Basic cpd plays the corrosive effect to silicon wafer surface; Can regulate finishing polish removal speed through kind and the content of regulating basic cpd; In the polishing composition, the weight percentage of basic cpd is 0.001～10wt%, and the final pH of polishing fluid is controlled at 8～12.
Said abrasive material is a colloid silica, and abrasive size is 1～100nm, and the weight percentage of abrasive material is 0.05～20wt%.
A kind of polishing composition that is used for the silicon wafer finishing polish provided by the invention, its component and proportioning are:
The present invention provides a kind of above-mentioned preparation method who is used for the polishing composition of silicon wafer finishing polish, and concrete steps are:
1) takes by weighing each component in said ratio, abrasive material is scattered in the deionized water, and fully stir with whisking appliance;
2) add polymkeric substance bridging agent and water-soluble polymers thickening material, in whisking appliance, make itself and abrasive material thorough mixing;
3) add frictional coefficient regulator and basic cpd successively;
4) using the aperture is that the following filter core of 0.5 μ m filters polishing composition, to remove the large granular impurity in the polishing composition, promptly obtains polishing composition of the present invention, and its pH is 8～12.
The present invention compared with prior art has following advantage:
1) the polymkeric substance bridging agent in the polishing composition of the present invention; The function that strengthens the water-soluble polymers three-dimensional net structure is arranged; Improve the stability of polymkeric substance in slurry; The deposition that effectively suppresses particle and polymkeric substance reduces residual in surface and the polishing pad, the cleaning of silicon wafer and polishing pad after helping polishing;
2) polishing composition of the present invention has been realized directly controlling the frictional coefficient between silicon wafer surface and polishing pad through adding the frictional coefficient regulator; Improve the rotation situation of silicon wafer in polishing process; Reduce the silicon wafer surface cut, the homogeneity of silicon wafer surface after the raising finishing polish;
3) polishing composition of the present invention is raw materials used is easy to get, pollution-free, compliance with environmental protection requirements and carry out large-scale industrial production easily.
Polishing composition of the present invention is particularly suitable for silicon wafer polishing; It is advantageous that and to improve the stability of polymkeric substance in slurry; Regulate the frictional coefficient between silicon wafer surface and the polishing pad; The deposition that effectively suppresses particle and polymkeric substance, the cut of minimizing silicon wafer surface, raising is polished the homogeneity of back silicon wafer surface quality and is easy to clean.
Description of drawings
Fig. 1 is not for adding AFM (AFM) photo (comparative example 3) of silicon wafer after polymkeric substance bridging agent and the finishing polish of frictional coefficient regulator in the polishing composition of the present invention.
Fig. 2 for the polishing composition finishing polish of adopting the embodiment of the invention 1 after the AFM photo of silicon wafer, added polymkeric substance bridging agent and frictional coefficient regulator in the polishing composition.
Fig. 3 for the polishing composition finishing polish of adopting the embodiment of the invention 6 after the AFM photo of silicon wafer, added polymkeric substance bridging agent and frictional coefficient regulator in the polishing composition, and each components do match is better.
Embodiment
Through embodiment the present invention is done further elaboration below, the scope that in no case should be construed as limiting the invention certainly.
Test example
Polishing composition after the configuration is used for polishing experiments, and the polishing experiments parameter is following:
Polishing machine: CP-4 type chemically machinery polished experimental machine, be furnished with 1 rubbing head, can throw 1 silicon wafer;
Polish pressure: 5PSI;
Polishing rotary speed: 40 commentaries on classics/min;
Polished silicon single-chip specification: P type < 100 >, diameter 100mm, resistivity: 0.1～100 Ω cm;
Polishing time: 30min;
Polishing pad: Politex type polyurethane foamed solidification polishing pad;
Polishing fluid flow: 80ml/min;
Polish temperature: 25 ℃
The silicon wafer surface quality examination of polishing back:
Use AFM to detect the surfaceness of polishing back silicon wafer.The AFM that experiment is adopted is BrukerDIMENSION ICON, and the probe radius is 10nm, and its vertical resolution is 0.01nm, and sweep rate is 1.5Hz, sweep limit 10 * 10 μ m
2Adhere to the influence of impurity for what avoid that silicon wafer surface exists, before experiment, silicon wafer is carried out ultrasonic cleaning respectively in acetone, absolute ethyl alcohol, deionized water experimental result.
The silicon wafer surface profile is tested after using ZYGO New View 7200 type contourgraphs to finishing polish, 2 times of eyepieces, and 50 times of object lens, test specification is 0.07 * 0.05mm
2, get the homogeneity that test back silicon wafer PV value is come silicon wafer surface in the comparison polishing process.
CP-4 type polishing experiments machine carries the frictional coefficient test macro, can the frictional coefficient in the polishing process directly be read, and gets that the maximum friction coefficient compares in each polishing experiments process.
Visible by the embodiment that provides in the table, each component concentration is in the best polishing composition under polishing technological conditions according to the invention: contain abrasive material (SiO
2) 5wt%; Contain water-soluble polymers guar gum 0.005wt%, methylcellulose gum 0.1wt%, contain polymkeric substance bridging agent Z 150PH 0.04wt%, contain frictional coefficient regulator AEO 0.004wt%; Contain basic cpd ammoniacal liquor 1.0wt%, AEEA 0.4wt%; Frictional coefficient reaches 0.31, and the silicon wafer surface roughness after the polishing composition polishing is low to moderate 0.04nm, and the PV value reaches 0.003 μ m.
Embodiments of the invention prove absolutely that polishing composition of the present invention is that a kind of CMP of excellent property uses polishing material, is suitable for the silicon wafer finishing polish.
The above only is a preferred implementation of the present invention; Should be noted that those skilled in the art for the present technique field; Under the prerequisite that does not break away from know-why of the present invention, can also make corresponding adjustment and improvement, these adjustment and improvement also should be regarded as protection scope of the present invention.
Following table is the component and the content of polishing composition among each embodiment, and used ammoniacal liquor is the actual content in the compsn, can adopt 20～30% ammonia soln adding.(use each components contents in the diluent, the liquid concentrator of polishing composition of the present invention also can concentrate diluent more than 10,20,30,40 even 40 times and obtain) and polish by it after roughness, surface undulation value and the frictional coefficient of silicon wafer surface.
Claims (10)
1. polishing composition that is used for the silicon wafer finishing polish; It comprises abrasive material, basic cpd and water; It is characterized in that: also comprise water-soluble polymers, polymkeric substance bridging agent and frictional coefficient regulator, wherein, the weight percentage of water-soluble polymers is 0.001～5wt%; The weight percentage of polymkeric substance bridging agent is 0.001～1wt%, and the weight percentage of frictional coefficient regulator is 0.001～0.5wt%.
2. polishing composition according to claim 1 is characterized in that: said water-soluble polymers is one or more in the hydroxypropylcellulose of Natvosol or lipid modification of guar gum, XG 550, sodium-alginate, CMS, FM, CMC 99.5, sulfonic acid TKK 021, Tylose CH 50, methylcellulose gum, carboxyethyl methylphosphinate Mierocrystalline cellulose, Vltra tears, hydroxy butyl methyl cellulose, Natvosol, lipid modification.
3. polishing composition according to claim 1 is characterized in that: said polymkeric substance bridging agent is the polymkeric substance of poly-hydroxy, many carboxyls and/or polyether base.
4. according to claim 1 or 3 described polishing compositions, it is characterized in that: said polymkeric substance bridging agent is one or more in Z 150PH, Z 150PH and polystyrene block copolymer, polyoxyethylene glycol, polyoxyethylene, polyoxyethylene and ethylene oxide-propylene oxide block copolymer, polymethyl acrylic acid, ammonium polymethacrylate salt, polymethyl acid potassium salt, ROHM, ammonium polyacrylate salt, ROHM sylvite, polyamic acid, polyamic acid ammonium salt, polyamic acid sylvite, the polyoxyethylene nonylphenol.
5. polishing composition according to claim 1 is characterized in that: said frictional coefficient regulator is one or more of Witco 1298 Soft Acid, dodecyl sodium sulfonate, Succinic Acid di-isooctyl sulfonic acid, AEO, AEO sulfuric acid or AEO carboxylic acid.
6. polishing composition according to claim 1 is characterized in that: said basic cpd is one or more in Pottasium Hydroxide, sodium hydroxide, volatile salt, bicarbonate of ammonia, saleratus, salt of wormwood, sodium hydrogencarbonate, yellow soda ash, TMAH, ammoniacal liquor, methylamine, dimethyl amine, Trimethylamine, ethylamine, DIETHANOL AMINE, triethylamine, Yi Bingchunan, aminopropanol, tetraethyl-amine, thanomin, diethyl triamine, triethyl tetramine, AEEA, hexamethylene-diamine, NSC 446, Triethylenetetramine (TETA), Piperazine anhydrous or the Uricida.
7. polishing composition according to claim 1 is characterized in that: in the polishing composition, the weight percentage of basic cpd is 0.001～10wt%.
8. polishing composition according to claim 1 is characterized in that: the pH of polishing composition is 8～12.
9. polishing composition according to claim 1 is characterized in that: said abrasive material is a colloid silica, and abrasive size is 1～100nm, and the weight percentage of abrasive material is 0.05～20wt%.
10. the preparation method of any described polishing composition of claim of claim 1 to 9 is characterized in that this method steps is:
1) takes by weighing each component in said ratio, abrasive material is scattered in the deionized water, and fully stir with whisking appliance;
2) add polymkeric substance bridging agent and water-soluble polymers thickening material, in whisking appliance, make itself and abrasive material thorough mixing;
3) add frictional coefficient regulator and basic cpd successively;
4) using the aperture is that the following filter core of 0.5 μ m filters polishing composition, removes the large granular impurity in the polishing composition, and gained polishing composition pH is 8～12.
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Cited By (13)
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| CN102775915A (en) * | 2012-06-25 | 2012-11-14 | 深圳市力合材料有限公司 | Silicon wafer fine polishing combined solution capable of inhibiting particle deposition and preparation method thereof |
| CN104513626A (en) * | 2014-12-22 | 2015-04-15 | 深圳市力合材料有限公司 | Silicon chemical-mechanical polishing solution |
| CN104530987A (en) * | 2014-12-10 | 2015-04-22 | 深圳市力合材料有限公司 | Composition for finishing polish of silicon wafer and preparation method of composition |
| CN104804649A (en) * | 2015-04-24 | 2015-07-29 | 清华大学 | Polishing solution for gallium nitride |
| WO2016019211A1 (en) * | 2014-08-01 | 2016-02-04 | 3M Innovative Properties Company | Polishing solutions and methods of using same |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
| CN106663621A (en) * | 2014-08-05 | 2017-05-10 | 信越半导体株式会社 | Method for final polishing of silicon wafer, and silicon wafer polished by method |
| CN107030583A (en) * | 2017-03-21 | 2017-08-11 | 天津华海清科机电科技有限公司 | Silicon substrate film polishing method and device |
| CN112210301A (en) * | 2019-07-10 | 2021-01-12 | 凯斯科技股份有限公司 | Chemical mechanical polishing slurry composition for polishing multilayer film |
| CN114940866A (en) * | 2022-06-29 | 2022-08-26 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing liquid for silicon wafers, preparation method and application thereof |
| CN115044299A (en) * | 2022-07-04 | 2022-09-13 | 浙江奥首材料科技有限公司 | Water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent, preparation method and application thereof, and grinding fluid containing water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent |
| CN115466573A (en) * | 2022-09-05 | 2022-12-13 | 广东粤港澳大湾区黄埔材料研究院 | Polishing solution for monocrystalline silicon wafer and application thereof |
| CN115926629A (en) * | 2022-12-30 | 2023-04-07 | 昂士特科技(深圳)有限公司 | Chemical mechanical polishing composition with improved recycle properties |
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| CN101550319A (en) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
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| CN102775915A (en) * | 2012-06-25 | 2012-11-14 | 深圳市力合材料有限公司 | Silicon wafer fine polishing combined solution capable of inhibiting particle deposition and preparation method thereof |
| WO2016019211A1 (en) * | 2014-08-01 | 2016-02-04 | 3M Innovative Properties Company | Polishing solutions and methods of using same |
| CN106574147A (en) * | 2014-08-01 | 2017-04-19 | 3M创新有限公司 | Polishing solutions and methods of using same |
| CN106663621B (en) * | 2014-08-05 | 2019-06-11 | 信越半导体株式会社 | The final polishing method of Silicon Wafer and the Silicon Wafer polished using the polishing method |
| CN106663621A (en) * | 2014-08-05 | 2017-05-10 | 信越半导体株式会社 | Method for final polishing of silicon wafer, and silicon wafer polished by method |
| CN104530987A (en) * | 2014-12-10 | 2015-04-22 | 深圳市力合材料有限公司 | Composition for finishing polish of silicon wafer and preparation method of composition |
| CN104530987B (en) * | 2014-12-10 | 2017-04-05 | 深圳市力合材料有限公司 | A kind of silicon wafer finishing polish compositionss and preparation method |
| CN104513626A (en) * | 2014-12-22 | 2015-04-15 | 深圳市力合材料有限公司 | Silicon chemical-mechanical polishing solution |
| CN104513626B (en) * | 2014-12-22 | 2017-01-11 | 深圳市力合材料有限公司 | Silicon chemical-mechanical polishing solution |
| CN104804649A (en) * | 2015-04-24 | 2015-07-29 | 清华大学 | Polishing solution for gallium nitride |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
| CN107030583A (en) * | 2017-03-21 | 2017-08-11 | 天津华海清科机电科技有限公司 | Silicon substrate film polishing method and device |
| CN112210301A (en) * | 2019-07-10 | 2021-01-12 | 凯斯科技股份有限公司 | Chemical mechanical polishing slurry composition for polishing multilayer film |
| CN114940866A (en) * | 2022-06-29 | 2022-08-26 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing liquid for silicon wafers, preparation method and application thereof |
| CN114940866B (en) * | 2022-06-29 | 2023-09-19 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing liquid for silicon wafer, preparation method and application thereof |
| CN115044299A (en) * | 2022-07-04 | 2022-09-13 | 浙江奥首材料科技有限公司 | Water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent, preparation method and application thereof, and grinding fluid containing water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent |
| CN115044299B (en) * | 2022-07-04 | 2023-11-17 | 浙江奥首材料科技有限公司 | Water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent, preparation method and application thereof, and grinding fluid containing water-soluble high-specific-gravity large-size abrasive suspension auxiliary agent |
| CN115466573A (en) * | 2022-09-05 | 2022-12-13 | 广东粤港澳大湾区黄埔材料研究院 | Polishing solution for monocrystalline silicon wafer and application thereof |
| CN115466573B (en) * | 2022-09-05 | 2024-02-20 | 广州飞雪芯材有限公司 | Polishing solution for monocrystalline silicon wafer and application thereof |
| CN115926629A (en) * | 2022-12-30 | 2023-04-07 | 昂士特科技(深圳)有限公司 | Chemical mechanical polishing composition with improved recycle properties |
| CN115926629B (en) * | 2022-12-30 | 2023-12-05 | 昂士特科技(深圳)有限公司 | Chemical mechanical polishing composition with improved recycling properties |
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