CN102516873A - Silicon wafer polishing composition and preparation method thereof - Google Patents

Silicon wafer polishing composition and preparation method thereof Download PDF

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CN102516873A
CN102516873A CN 201110325029 CN201110325029A CN102516873A CN 102516873 A CN102516873 A CN 102516873A CN 201110325029 CN201110325029 CN 201110325029 CN 201110325029 A CN201110325029 A CN 201110325029A CN 102516873 A CN102516873 A CN 102516873A
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polishing composition
silicon wafer
polishing
acid
water
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CN 201110325029
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CN102516873B (en )
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潘国顺
邹春莉
顾忠华
龚桦
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深圳市力合材料有限公司
深圳清华大学研究院
清华大学
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Abstract

The invention discloses a silicon wafer polishing composition and a preparation method thereof, and belongs to the field of chemically mechanical polishing (CMP). The silicon wafer polishing composition contains a grinding material, one or more alkaline compounds, 0.001 to 5 wt% of one or more water-soluble polymers, deionized water, 0.001 to 1 wt% of one or more polymer bridging agents and 0.001 to 0.5 wt% of one or more frictional factor conditioning agents, wherein the pH value of the silicon wafer polishing composition is in a range of 8 to 12. The silicon wafer polishing composition is especially suitable for silicon wafer polishing, can improve the stability of a polymer in slurry, can adjust a frictional factor between a silicon wafer surface and a polishing pad, can effectively inhibit the deposition of particles and a polymer, can reduce the scratches on the surface of a silicon wafer, can improve the uniformity of the quality of a polished silicon wafer surface, and can be washed away easily.

Description

一种硅晶片抛光组合物及其制备方法 A polishing composition and preparation method for a silicon wafer

技术领域 FIELD

[0001] 本发明涉及化学机械抛光(CMP)领域,特别涉及一种用于硅晶片精抛光的抛光组合物及其制备方法。 [0001] The present invention relates to a chemical mechanical polishing (CMP), and in particular relates to a polishing composition and preparation method for a silicon wafer is finish polished.

背景技术 Background technique

[0002] 集成电路(IC)是信息产业的技术基础,是推动高新技术发展的核心驱动力。 [0002] integrated circuit (IC) is the technical basis for the information industry, is the core driving force to promote high-tech development. 化学机械抛光技术可以有效的兼顾加工表面的全局和局部平整度,在超大规模集成电路制造中,这种技术被广泛地用于加工单晶硅衬底。 The chemical mechanical polishing techniques can be effective both global and local flatness of the machined surface, in VLSI fabrication, this technique is widely used for processing single crystal silicon substrate.

[0003] 传统的CMP系统由以下三部分组成:旋转的硅晶片夹持装置、承载抛光垫的工作台、抛光液(浆料)供应系统。 [0003] A conventional CMP system consists of three parts: a silicon wafer holding means rotatably carrying the polishing pad table, a polishing liquid (slurry) supply system. 抛光时,旋转的工件以一定的压力施于随工作台一起旋转的抛光垫上,抛光液在工件与抛光垫之间流动,并在工件表面产生化学反应,工件表面形成的化学反应物由磨料的机械摩擦作用去除。 Polishing, rotating a workpiece at a constant pressure applied to with the rotation of the table with a polishing pad, a polishing liquid to flow between the workpiece and the polishing pad, and the chemical reaction at the surface, a chemical reactant of the workpiece surface by the abrasive mechanical friction removed. 在化学成膜与机械去膜的交替过程中,通过化学与机械的共同作用从工件表面去除极薄的一层材料,最终实现超精密表面加工。 In the alternative process of chemical deposition and mechanical stripping, the removal of a very thin layer of material from the workpiece surface by the interaction of chemical and mechanical, and ultimately ultra-precision surface machining.

[0004] 通常,在工业中为了实现硅晶片的抛光加工精度,达到集成电路硅晶片要求的技术指标,需进行二步化学机械抛光(CMP)(粗抛光和精抛光),在对硅晶片表面进行分步化学机械抛光时,每步抛光所使用的抛光液及相应的抛光工艺条件均有所不同,所对应的硅晶片各步所要达到的加工精度也不同。 [0004] Generally, in the industry to achieve polishing precision of the silicon wafer to reach the integrated circuit silicon wafer required specifications, the need for two-stage chemical mechanical polishing (the CMP) (rough polishing and finish polishing), the silicon wafer surface when step chemical-mechanical polishing, a polishing liquid for each step of polishing is used and the corresponding polishing process conditions are different, corresponding to a silicon wafer in each step to be achieved by machining precision are different. 在粗抛光步骤中,除去硅晶片切割和成形残留下的表面损伤层,加工成镜面,最后通过对硅晶片进行“去雾”精抛光,从而最大程度上降低表面粗糙及其他自由微小缺陷。 In the rough polishing step, removing the silicon wafer cut and surface damage layer remaining under the molding, mirror finished, and finally through a silicon wafer "defogging" finish polishing to reduce surface roughness and other free of minute defects maximum extent.

[0005] 在实际生产中,硅晶片的最终精抛光是表面质量的决定性步骤,更好的硅晶片表面及更高效率的去除是新型硅晶片精抛液不断追求的目标,国内外采用了多种方式进行尝试,并取得了一定进展。 [0005] In actual production, the final finish polishing a silicon wafer is a crucial step surface quality, better surface and higher efficiency in removing the silicon wafer is a new silicon wafer precision polishing liquid continuous goal, domestic and uses a multi- ways to try, and made some progress.

[0006] 专利200610014414. 5公开了一种由复合磨料、非离子表面活性剂、螯合剂、有机碱和去离子水组成的用于硅晶片的精抛光液,该抛光液具有抛光速率快、无钠离子沾污的特点,抛光后晶片表面无损伤且容易清洗。 [0006] Patent 200610014414.5 discloses a fine polishing liquid composite abrasive, a nonionic surfactant, a chelating agent, an organic base and deionized water for a silicon wafer, the polishing liquid has a faster polishing rate without sodium ion contamination characteristics, polished surface of the wafer without damage, and easy to clean.

[0007] 专利US2008/0127573A1公开了一种用于硅晶片精抛光的组合物,它含有磨料、pH 调节剂、水溶性增稠剂、乙炔表面活性剂、杂环胺和去离子水。 [0007] Patent US2008 / 0127573A1 discloses a composition for a silicon wafer finish for polishing, which contains an abrasive, pH adjusting agents, water-soluble thickener, acetylene surfactants, heterocyclic amines, and deionized water. 该抛光液能够显著的减少抛光后硅晶片表面的LLS缺陷、雾缺陷和粗糙度。 The polishing solution can significantly reduce the polishing LLS defects in the wafer surface of the silicon, fog defects and roughness.

[0008] 专利US5352277公开了一种抛光液,它含有胶态二氧化硅、水溶聚合物和水溶盐, 该水溶盐由一种选自Na、K和NH4的阳离子和一种选自Cl、F、NO3和ClO4的阴离子构成,可实现低于5nm的低表面粗糙度的软表面。 [0008] Patent No. US5352277 discloses a polishing slurry containing colloidal silica, water soluble polymer and water-soluble salts, the water-soluble salt of one selected from Na, a cation K and NH4 and one selected from Cl, F , NO3 and ClO4 of anions can be achieved below the soft surface of the low surface 5nm roughness.

[0009] 以上方法在控制硅晶片表面缺陷方面取得了一定的效果,但对于更高要求的单晶硅精抛光,以上方法在进一步控制表面缺陷、残留、以及提高晶片表面均勻性和降低摩擦系数方面还存在一定的局限。 [0009] The above method in controlling the silicon wafer surface defects achieved some results, but for the more demanding monocrystalline silicon fine polishing, the above method further control surface defects, residue, as well as improve the wafer surface 均勻 and reduced coefficient of friction there is still some limitations.

发明内容 SUMMARY

3[0010] 本发明提供了一种可提高聚合物在浆料中的稳定性、降低表面与抛光垫间摩擦系数、抑制颗粒和聚合物的沉积,减少硅晶片表面的划痕,提高精抛光后硅晶片表面质量均勻性的硅晶片抛光组合物。 3 [0010] The present invention provides an improved stability of the polymer in the slurry, reducing the inter-surface of the polishing pad friction coefficient to suppress the deposition of particles and a polymer, reduce silicon wafer surface scratch, improved finish polishing surface quality of the silicon wafer uniformity of the silicon wafer polishing composition.

[0011] 为了实现上述目标,本发明采用了聚合物桥联剂与水溶性聚合物共同作用,使聚合物在浆料中具有极好的稳定性,另外,还加入了摩擦系数调节剂,降低硅晶片和抛光垫之间的摩擦系数。 [0011] In order to achieve the above object, the present invention uses the interaction of polymer crosslinking agent and a water-soluble polymer, a polymer having an excellent stability in the slurry, addition, addition of the coefficient of friction modifiers, reduced friction coefficient between the silicon wafer and polishing pad.

[0012] 一种用于硅晶片精抛光的抛光组合物,其包括磨料、碱性化合物和水,其特征在于:还包括水溶性聚合物、聚合物桥联剂和摩擦系数调节剂,其中,水溶性聚合物的重量百分含量为0. 001〜5wt%,聚合物桥联剂的重量百分含量为0. 001〜Iwt %,摩擦系数调节剂的重量百分含量为0. 001〜0. 5wt%。 The polishing composition [0012] A silicon wafer is finish for polishing comprising an abrasive, an alkaline compound and water, characterized by: further comprising a water-soluble polymer, a polymeric crosslinking agent and a friction coefficient controlling agent, wherein weight percentage of water soluble polymer is 0. 001~5wt%, the weight percentage of the polymer crosslinking agent is 0. 001~Iwt%, the weight percentage of the coefficient of friction modifier is 0.5 001~0 . 5wt%.

[0013] 所述水溶性聚合物为瓜尔胶、黄原胶、海藻酸钠、羧甲基淀粉、醋酸纤维素、羧甲基纤维素、磺酸乙基纤维素、羧甲基羟乙基纤维素、甲基纤维素、羧乙基甲基纤维素、羟丙基甲基纤维素、羟丁基甲基纤维素、羟乙基纤维素、脂类改性的羟乙基纤维素或脂类改性的羟丙基纤维素中的一种或几种。 [0013] The water-soluble polymer is guar gum, xanthan gum, sodium alginate, carboxymethyl starch, cellulose acetate, carboxymethyl cellulose, sulfonic acid ethyl cellulose, carboxymethyl hydroxyethyl cellulose, methyl cellulose, carboxyethyl methyl cellulose, hydroxypropyl methyl cellulose, hydroxybutyl methyl cellulose, hydroxyethyl cellulose, lipid-modified hydroxyethyl cellulose or lipids modified one or more of hydroxypropyl cellulose.

[0014] 所述聚合物桥联剂为多羟基、多羧基和/或多醚基的聚合物,选自聚乙烯醇、聚乙烯醇与聚苯乙烯嵌段共聚物、聚乙二醇、聚氧化乙烯、聚氧化乙烯和环氧乙烷-环氧丙烷嵌段共聚物、聚甲基丙烯酸、聚甲基丙烯酸铵盐、聚甲基丙烯酸钾盐、聚丙烯酸、聚丙烯酸铵盐、聚丙烯酸钾盐、聚酰胺酸、聚酰胺酸铵盐、聚酰胺酸钾盐、壬基酚聚氧乙烯醚中的一种或几种。 [0014] The polymeric crosslinking agent is a polymer polyol, polycarboxy and / or an ether group, selected from polyvinyl alcohol, polyvinyl alcohol and polystyrene block copolymer, polyethylene glycol, polypropylene ethylene oxide, polyethylene oxide and ethylene oxide - propylene oxide block copolymers, polymethacrylic acid, polymethacrylic acid ammonium salt, polymethacrylic acid potassium salt, polyacrylic acid, ammonium polyacrylate, potassium polyacrylate salt, polyamic acid, polyamide acid ammonium salt, polyamide acid potassium salt, polyoxyethylene nonyl phenyl ether is one or more.

[0015] 所述摩擦系数调节剂为十二烷基苯磺酸、十二烷基磺酸、丁二酸二异辛酯磺酸、月旨肪醇聚氧乙烯醚、脂肪醇聚氧乙烯醚硫酸或脂肪醇聚氧乙烯醚羧酸的一种或几种。 [0015] The friction coefficient controlling agent is dodecylbenzenesulfonic acid, dodecyl sulfonic acid, succinic acid isooctyl ester sulfonate, month aimed fatty alcohol polyoxyethylene ethers, fatty alcohol polyoxyethylene ether sulfuric acid or fatty alcohol polyoxyethylene one or more vinyl ether carboxylic acid.

[0016] 所述碱性化合物为氢氧化钾、氢氧化钠、碳酸铵、碳酸氢铵、碳酸氢钾、碳酸钾、碳酸氢钠、碳酸钠、四甲基氢氧化铵、氨水、甲基胺、二甲基胺、三甲基胺、乙基胺、二乙基胺、三乙基胺、异丙醇胺、氨基丙醇、四乙基胺、乙醇胺、二乙基三胺、三乙基四胺、羟乙基乙二胺、 六亚甲基二胺、二亚乙基三胺、三亚乙基四胺、无水哌嗪或六水哌嗪中的一种或几种。 [0016] The basic compound is potassium hydroxide, sodium hydroxide, ammonium carbonate, ammonium bicarbonate, potassium bicarbonate, potassium carbonate, sodium carbonate, tetramethylammonium hydroxide, ammonia, methylamine , dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, isopropyl amine, aminopropanol, tetraethylammonium, ethanolamine, diethylene triamine, triethyl tetramine, ethylene diamine, hexamethylene diamine, diethylene triamine, triethylene tetramine, anhydrous piperazine or one or several of piperazine hexahydrate in. 碱性化合物对硅晶片表面起到腐蚀的作用,可以通过调节碱性化合物的种类及含量调节精抛光去除速率,抛光组合物中,碱性化合物的重量百分含量为0.001〜IOwt%,将抛光液的最终PH控制在8〜12。 Basic compound functions as the silicon wafer surface effect of corrosion can be removed rate modifier finish polishing by adjusting the type and content of the basic compound in the polishing composition, the weight percentage of the basic compound is 0.001~IOwt%, polishing liquid final PH controlled at 8~12.

[0017] 所述磨料为胶体二氧化硅,磨料粒径为1〜lOOnm,磨料的重量百分含量为0. 05〜 20wt%。 [0017] The abrasive is colloidal silica, the abrasive particle size 1~lOOnm, weight percent of the abrasive is 0. 05~ 20wt%.

[0018] 本发明提供的一种用于硅晶片精抛光的抛光组合物,其组分及配比为: [0018] The present invention provides a polishing composition for silicon wafers fine polishing for, the components and ratio of:

[0019]磨料 0.05~20wt% [0019] The abrasive 0.05 ~ 20wt%

碱性化合物 0.001~10wt% Basic compound 0.001 ~ 10wt%

水溶性聚合物 0.001~5wt% Water-soluble polymer 0.001 ~ 5wt%

聚合物桥联剂 0.001~lwt% Polymeric crosslinking agent 0.001 ~ lwt%

摩擦系数调节剂 0.001~0.5wt% Coefficient of friction modifier 0.001 ~ 0.5wt%

去离子水 余量。 Deionized water margin.

[0020] 本发明提供一种上述用于硅晶片精抛光的抛光组合物的制备方法,具体步骤为: [0020] The present invention provides a method for preparing the above polishing composition for silicon wafers finish polishing, the specific steps:

[0021] 1)按所述比例称取各组分,将磨料分散于去离子水中,并用搅拌器充分搅拌; [0021] 1) by the ratio Weigh the components, the abrasive dispersed in deionized water, and sufficiently stirred with a stirrer;

[0022] 2)加入聚合物桥联剂和水溶性聚合物增稠剂,在搅拌器中使其与磨料充分混合; [0022] 2) added to the polymer crosslinking agent and water-soluble polymeric thickeners, mixed thoroughly with the abrasive in a mixer;

[0023] 3)依次加入摩擦系数调节剂和碱性化合物; [0023] 3) were successively added friction coefficient controlling agent and a basic compound;

[0024] 4)用孔径为0. 5μπι以下的滤芯对抛光组合物进行过滤,以除去抛光组合物中的大颗粒杂质,即获得本发明所述的抛光组合物,其PH为8〜12。 [0024] 4) 0. 5μπι the cartridge of the polishing composition is filtered to remove large particulate impurities in the polishing composition, i.e., to obtain a polishing composition according to the present invention with a pore size, the PH of 8~12.

[0025] 本发明与现有技术相比有如下优点: [0025] the present invention over the prior art has the following advantages:

[0026] 1)本发明抛光组合物中的聚合物桥联剂,有增强水溶性聚合物三维网络结构的功能,提高聚合物在浆料中的稳定性,有效的抑制颗粒和聚合物的沉积,减少表面和抛光垫中的残留,有利于抛光后硅晶片和抛光垫的清洗; [0026] 1) the polishing composition of the present invention are polymeric crosslinking agent, there are enhancements to the three-dimensional network structure of the water-soluble polymer, to improve stability of the polymer in the slurry, effectively inhibit deposition of particles and polymer , reduce the residual surface and the polishing pad is conducive to a silicon wafer and the cleaning of the polishing pad after polishing;

[0027] 2)本发明抛光组合物实现了通过添加摩擦系数调节剂直接控制硅晶片表面与抛光垫间的摩擦系数,改善硅晶片在抛光过程中的转动情况,减少硅晶片表面划痕,提高精抛光后硅晶片表面的均勻性; [0027] 2) The polishing composition of the present invention to achieve a coefficient of friction between the surface of the polishing pad to directly control a silicon wafer by adding the coefficient of friction modifiers, to improve the rotation of the silicon wafer during the polishing process, reduce silicon wafer surface scratches, improving uniformity of the wafer surface of the silicon after fine polishing;

[0028] 3)本发明的抛光组合物所用原料易得,无污染,符合环保要求且容易进行大规模工业化生产。 [0028] 3) The polishing composition of the present invention is easily available raw materials, non-polluting, environmentally friendly and easy large-scale industrial production.

[0029] 本发明的抛光组合物特别适合于硅晶片抛光,其优势在于可提高聚合物在浆料中的稳定性,调节硅晶片表面与抛光垫之间的摩擦系数,有效的抑制颗粒和聚合物的沉积,减少硅晶片表面的划痕,提高抛光后硅晶片表面质量的均勻性且易于清洗。 [0029] The polishing composition of the present invention is particularly suitable for silicon wafer polishing, the advantage that improved stability of the polymer in the slurry, adjusting the coefficient of friction between the wafer surface and the polishing pad, effectively suppressing particles and polymeric deposits reduce scratching of the wafer surface of the silicon, to improve the uniformity of the surface quality of the silicon wafer after polishing and easy to clean.

附图说明 BRIEF DESCRIPTION

[0030] 图1为本发明抛光组合物中未添加聚合物桥联剂和摩擦系数调节剂精抛光后硅晶片的原子力显微镜(AFM)照片(比较例3)。 [0030] FIG 1 in the polishing composition is not added after the polymer crosslinking agent and a friction coefficient modifier finish polishing AFM silicon wafer (AFM) photograph (Comparative Example 3) of the present invention.

[0031] 图2为采用本发明实施例1的抛光组合物精抛光后硅晶片的AFM照片,抛光组合物中添加了聚合物桥联剂和摩擦系数调节剂。 [0031] FIG. 2 is employed AFM photograph of the polishing composition of fine Example 1 is polished silicon wafer of the present invention, the polishing composition of the added polymer crosslinking agent and the coefficient of friction modifier.

[0032] 图3为采用本发明实施例6的抛光组合物精抛光后硅晶片的AFM照片,抛光组合物中添加了聚合物桥联剂和摩擦系数调节剂,且各组分匹配较好。 [0032] FIG. 3 is adopted AFM photograph of the polishing composition of fine Example 6 of polished silicon wafer, embodiments of the present invention, the polishing composition of the added polymer crosslinking agent and a friction coefficient controlling agent, and the components good match.

具体实施方式 Detailed ways

[0033] 下面通过实施例对本发明作进一步的阐述,当然无论如何不应解释为限制本发明的范围。 [0033] The following examples of the present invention will be further illustrated, of course, in any case should not be construed as limiting the scope of the invention.

[0034] 试验实施例 [0034] Test Example

[0035] 将配置后的抛光组合物用于抛光实验,抛光实验参数如下: [0035] After the configuration of the polishing composition for polishing test, the polishing test parameters were as follows:

[0036] 抛光机:CP_4型化学机械抛光实验机,配有1个抛光头,可抛1片硅晶片; [0036] Polishing machine: CP_4 chemical mechanical polishing testing machine equipped with a polishing head, the disposable a silicon wafer;

[0037] 抛光压力:5PSI ; [0037] Polishing pressure: 5PSI;

[0038] 抛光转盘转速:40转/min ; [0038] Polishing rotary speed: 40 revolutions / min;

[0039] 抛光硅单晶片规格:P型<100>,直径100mm,电阻率:0. 1〜100 Ω · cm ; [0039] polished silicon single crystal wafer specifications: P-type <100>, a diameter of 100mm, resistivity: 0 1~100 Ω · cm;.

[0040]抛光时间:30min ; [0040] Polishing time: 30min;

[0041] 抛光垫:PoliteX型聚氨酯发泡固化抛光垫; [0041] Polishing pad: Politex polyurethane foaming and curing the polishing pad;

[0042]抛光液流量:80ml/min ; [0042] The polishing solution flow rate: 80ml / min;

[0043] 抛光温度:25°C [0043] Polishing Temperature: 25 ° C

[0044] 抛光后硅晶片表面质量检测: [0044] The surface quality of the silicon wafer after polishing Detection:

[0045] 使用AFM检测抛光后硅晶片的表面粗糙度。 [0045] The surface roughness of the silicon wafer after polishing AFM detected. 实验所采用的AFM为BrukerDIMENSION ICON,探针半径为lOnm,其垂直分辨率为O.Olnm,扫描频率为1.5Hz,扫描范围IOX 10 μ m2。 AFM experiments employed was BrukerDIMENSION ICON, the probe radius is lOnm, vertical resolution is O.Olnm, scanning frequency is 1.5Hz, the scanning range IOX 10 μ m2. 为避免硅晶片表面存在的附着杂质对实验结果的影响,在实验前将硅晶片分别在丙酮、无水乙醇、去离子水中进行超声清洗。 To avoid affecting the adhesion of impurities present in the silicon wafer surface on the experimental results, before the experiment the silicon wafer were ultrasonically cleaned in acetone, ethanol, deionized water.

[0046] 使用ZYGO New View 7200型轮廓仪对精抛光后硅晶片表面轮廓进行测试,2倍目镜,50倍物镜,测试范围为0. 07X0. 05mm2,取测试后硅晶片PV值来比较抛光过程中硅晶片表面的均勻性。 [0046] use ZYGO New View 7200 type profiler to finish polishing the silicon wafer surface contour test, twice the eyepiece, 50x objective, the test range is 0. 07X0. 05mm2, take the test after the silicon wafer PV value to compare the polishing process uniformity of the wafer surface silicon.

[0047] CP-4型抛光实验机自带有摩擦系数测试系统,可对抛光过程中的摩擦系数直接读取,取各抛光实验过程中最大摩擦系数进行比较。 [0047] CP-4 type polishing testing machine comes with a coefficient of friction test system can be read directly on the coefficient of friction of the polishing process, the maximum coefficient of friction compared to take each of the polishing experiment.

[0048] 由表中给出的实施例可见,在本发明所述抛光工艺条件下的最佳抛光组合物中各组分含量为:含磨料(SiO2) 5wt%,含水溶性聚合物瓜尔胶0.005wt%、甲基纤维素0. Iwt %,含聚合物桥联剂聚乙烯醇0. 04wt %,含摩擦系数调节剂脂肪醇聚氧乙烯醚0. 0(Mwt%,含碱性化合物氨水1. Owt %、羟乙基乙二胺0. ,摩擦系数达0. 31,抛光组合物抛光后的硅晶片表面粗糙度低至0. 04nm, PV值达0. 003 μ m。 [0048] Examples given seen from the table, each component content is in the polishing composition in the polishing process conditions of the present invention is as follows: the abrasive (SiO2) 5wt%, containing water-soluble polymer is guar gum 0.005wt%, methylcellulose 0. Iwt%, polymer-containing crosslinking agent a polyvinyl alcohol 0. 04wt%, having a coefficient of friction modifier fatty alcohol polyoxyethylene 0. 0 (Mwt% vinyl ether-containing basic compound is ammonia 1. Owt%, hydroxyethyl ethylenediamine 0.5, the friction coefficient was 0.31, the silicon wafer surface after polishing composition polishing roughness as low as 0. 04nm, PV value of 0. 003 μ m.

[0049] 本发明的实施例充分说明本发明的抛光组合物是一种性能优良的CMP用抛光材料,适合于硅晶片精抛光。 Example [0049] The present invention is fully described polishing composition of the present invention is an excellent CMP polishing material suitable for a silicon wafer precision polishing.

[0050] 以上所述仅是本发明的优选实施方式,应当指出的是对于本技术领域的一般技术人员来说,在不脱离本发明技术原理的前提下,还可以做出相应的调整和改进,这些调整和改进也应视为本发明的保护范围。 [0050] The above are only preferred embodiments of the present invention, it should be noted that for the average person skilled in the art, without departing from the technical principles of the present invention is provided, you can make the appropriate adjustments and modifications these adjustments and modifications should also be regarded as the protection scope of the present invention.

[0051] 下表为各实施例中抛光组合物的组分和含量,所用的氨水为组合物中的实际含量,可采用20〜30%的氨水溶液加入。 [0051] The following table shows various embodiments of the polishing composition of components and content, the use of ammonia as the composition of the actual content, can be 20 to 30% ammonia solution was added. (使用稀释液中各组分的含量,本发明抛光组合物的浓缩液亦可将稀释液浓缩10、20、30、40甚至40倍以上获得)以及由其进行抛光后的硅 (Content of each component of the diluted solution, a concentrate of the polishing composition of the present invention may also be diluted concentrates 10, 20 or even 40 times or more is obtained), and by the silicon after polishing

晶片表面的粗糙度、表面起伏值和摩擦系数。 The roughness of the wafer surface, the surface relief value and the coefficient of friction.

[0052] [0052]

6 6

Figure CN102516873AD00071

Claims (10)

  1. 1. 一种用于硅晶片精抛光的抛光组合物,其包括磨料、碱性化合物和水,其特征在于: 还包括水溶性聚合物、聚合物桥联剂和摩擦系数调节剂,其中,水溶性聚合物的重量百分含量为0. 001〜5wt%,聚合物桥联剂的重量百分含量为0. 001〜Iwt %,摩擦系数调节剂的重量百分含量为0. 001〜0. 5wt %。 The polishing composition A silicon wafer is finish polished for which comprises an abrasive, a basic compound and water, characterized by: further comprising a water-soluble polymer, a polymeric crosslinking agent and a friction coefficient controlling agent, wherein the water-soluble weight percent of the polymer was 0. 001~5wt%, the weight percentage of the polymer crosslinking agent is 0. 001~Iwt%, the weight percentage of the coefficient of friction modifier is 0.5 001~0. 5wt%.
  2. 2.根据权利要求1所述的抛光组合物,其特征在于:所述水溶性聚合物为瓜尔胶、黄原胶、海藻酸钠、羧甲基淀粉、醋酸纤维素、羧甲基纤维素、磺酸乙基纤维素、羧甲基羟乙基纤维素、甲基纤维素、羧乙基甲基纤维素、羟丙基甲基纤维素、羟丁基甲基纤维素、羟乙基纤维素、脂类改性的羟乙基纤维素或脂类改性的羟丙基纤维素中的一种或几种。 2. The polishing composition according to claim 1, wherein: said water-soluble polymer is guar gum, xanthan gum, sodium alginate, carboxymethyl starch, cellulose acetate, carboxymethyl cellulose , sulfonic ethyl cellulose, carboxymethyl hydroxyethyl cellulose, methyl cellulose, carboxyethyl methyl cellulose, hydroxypropyl methyl cellulose, hydroxybutyl methyl cellulose, hydroxyethyl cellulose, one or more of hydroxyethyl cellulose or a lipid-modified lipid-modified hydroxypropyl cellulose.
  3. 3.根据权利要求1所述的抛光组合物,其特征在于:所述聚合物桥联剂为多羟基、多羧基和/或多醚基的聚合物。 3. The polishing composition according to claim 1, wherein: said polymeric crosslinking agent is a polymer polyol, multiple carboxyl groups and / or ether groups.
  4. 4.根据权利要求1或3所述的抛光组合物,其特征在于:所述聚合物桥联剂为聚乙烯醇、聚乙烯醇与聚苯乙烯嵌段共聚物、聚乙二醇、聚氧化乙烯、聚氧化乙烯和环氧乙烷-环氧丙烷嵌段共聚物、聚甲基丙烯酸、聚甲基丙烯酸铵盐、聚甲基丙烯酸钾盐、聚丙烯酸、聚丙烯酸铵盐、聚丙烯酸钾盐、聚酰胺酸、聚酰胺酸铵盐、聚酰胺酸钾盐、壬基酚聚氧乙烯醚中的一种或几种。 4. The polishing composition of claim 1 or claim 3, wherein: said polymeric bridging agent is polyvinyl alcohol, polyvinyl and polystyrene block copolymer, polyethylene glycol, polyethylene oxide ethylene, polyethylene oxide and ethylene oxide - propylene oxide block copolymers, polymethacrylic acid, polymethacrylic acid ammonium salt, polymethacrylic acid potassium salt, polyacrylic acid, ammonium polyacrylate, polyacrylic acid, potassium salt , polyamic acid, polyamide acid ammonium salt, polyamide acid potassium salt, polyoxyethylene nonyl phenyl ether is one or more.
  5. 5.根据权利要求1所述的抛光组合物,其特征在于:所述摩擦系数调节剂为十二烷基苯磺酸、十二烷基磺酸、丁二酸二异辛酯磺酸、脂肪醇聚氧乙烯醚、脂肪醇聚氧乙烯醚硫酸或脂肪醇聚氧乙烯醚羧酸的一种或几种。 5. The polishing composition according to claim 1, wherein: the friction coefficient controlling agent is dodecylbenzenesulfonic acid, dodecyl sulfonic acid, succinic acid isooctyl ester sulfonate, fatty one or more alcohol polyoxyethylene ethers, fatty alcohol polyoxyethylene ether sulfate or a fatty alcohol polyoxyethylene ether carboxylic acid.
  6. 6.根据权利要求1所述的抛光组合物,其特征在于:所述碱性化合物为氢氧化钾、氢氧化钠、碳酸铵、碳酸氢铵、碳酸氢钾、碳酸钾、碳酸氢钠、碳酸钠、四甲基氢氧化铵、氨水、甲基胺、二甲基胺、三甲基胺、乙基胺、二乙基胺、三乙基胺、异丙醇胺、氨基丙醇、四乙基胺、乙醇胺、二乙基三胺、三乙基四胺、羟乙基乙二胺、六亚甲基二胺、二亚乙基三胺、三亚乙基四胺、 无水哌嗪或六水哌嗪中的一种或几种。 6. The polishing composition according to claim 1, wherein: said basic compound is potassium hydroxide, sodium hydroxide, ammonium carbonate, ammonium bicarbonate, potassium bicarbonate, potassium carbonate, sodium carbonate, sodium, tetramethylammonium hydroxide, ammonia, methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, isopropyl amine, aminopropanol, tetraethylammonium amine, ethanolamine, diethylene triamine, triethylene tetramine, ethylene diamine, hexamethylene diamine, diethylene triamine, triethylene tetramine, anhydrous piperazine or six one or more water-piperazine in.
  7. 7.根据权利要求1所述的抛光组合物,其特征在于:抛光组合物中,碱性化合物的重量百分含量为0. 001〜IOwt%。 7. The polishing composition according to claim 1, wherein: the polishing composition, the weight percentage of the basic compound is 0. 001~IOwt%.
  8. 8.根据权利要求1所述的抛光组合物,其特征在于:抛光组合物的PH为8〜12。 8. The polishing composition of claim 1, wherein: PH polishing composition is 8~12.
  9. 9.根据权利要求1所述的抛光组合物,其特征在于:所述磨料为胶体二氧化硅,磨料粒径为1〜lOOnm,磨料的重量百分含量为0. 05〜20wt%。 9. The polishing composition of claim 1, wherein: said abrasive is colloidal silica, the abrasive particle size 1~lOOnm, weight percent of the abrasive is 0. 05~20wt%.
  10. 10.权利要求1至9任意一个权利要求所述的抛光组合物的制备方法,其特征在于该方法步骤为:1)按所述比例称取各组分,将磨料分散于去离子水中,并用搅拌器充分搅拌;2)加入聚合物桥联剂和水溶性聚合物增稠剂,在搅拌器中使其与磨料充分混合;3)依次加入摩擦系数调节剂和碱性化合物;4)用孔径为0. 5 μ m以下的滤芯对抛光组合物进行过滤,除去抛光组合物中的大颗粒杂质,所得抛光组合物PH为8〜12。 10. The production method 1-9 to any one of claims polishing composition of claim, wherein the method steps of: 1) Press the proportion Weigh the components, the abrasive dispersed in deionized water, and dried stirrer sufficiently stirred; 2) adding a polymer crosslinking agent and water-soluble polymeric thickeners, mixed with the abrasive sufficiently in a blender; 3) were successively added friction coefficient controlling agent and a basic compound; 4) with the aperture filtration of cartridge 0. 5 μ m or less of the polishing composition, to remove the polishing composition of large particles of impurities, the resulting polishing composition PH is 8~12.
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CN104513626A (en) * 2014-12-22 2015-04-15 深圳市力合材料有限公司 Silicon chemical-mechanical polishing solution
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CN101550319A (en) * 2008-04-03 2009-10-07 安集微电子(上海)有限公司 Chemical mechanical polishing solution

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CN101451046A (en) * 2008-12-30 2009-06-10 清华大学;深圳清华大学研究院 Polishing composite for silicon wafer polishing

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Publication number Priority date Publication date Assignee Title
CN102775915A (en) * 2012-06-25 2012-11-14 深圳市力合材料有限公司 Silicon wafer fine polishing combined solution capable of inhibiting particle deposition and preparation method thereof
CN106574147A (en) * 2014-08-01 2017-04-19 3M创新有限公司 Polishing solutions and methods of using same
WO2016019211A1 (en) * 2014-08-01 2016-02-04 3M Innovative Properties Company Polishing solutions and methods of using same
CN104530987B (en) * 2014-12-10 2017-04-05 深圳市力合材料有限公司 A silicone wafer finish polishing compositions and method of preparation
CN104530987A (en) * 2014-12-10 2015-04-22 深圳市力合材料有限公司 Composition for finishing polish of silicon wafer and preparation method of composition
CN104513626B (en) * 2014-12-22 2017-01-11 深圳市力合材料有限公司 A silicone chemical mechanical polishing liquid
CN104513626A (en) * 2014-12-22 2015-04-15 深圳市力合材料有限公司 Silicon chemical-mechanical polishing solution
CN104804649A (en) * 2015-04-24 2015-07-29 清华大学 Polishing solution for gallium nitride
CN106398544A (en) * 2016-07-27 2017-02-15 清华大学 A CMP polishing composition suitable for a gallium nitride material
CN107030583A (en) * 2017-03-21 2017-08-11 天津华海清科机电科技有限公司 Silicon substrate polishing method and device

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