CN102478760A - Optical proximity correction (OPC) method for crossover profile - Google Patents
Optical proximity correction (OPC) method for crossover profile Download PDFInfo
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- CN102478760A CN102478760A CN2010105569152A CN201010556915A CN102478760A CN 102478760 A CN102478760 A CN 102478760A CN 2010105569152 A CN2010105569152 A CN 2010105569152A CN 201010556915 A CN201010556915 A CN 201010556915A CN 102478760 A CN102478760 A CN 102478760A
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Abstract
The invention discloses an optical proximity correction (OPC) method for crossover profile. The method comprises forming a crossover layer film on a silicon wafer having lower layer film profile, and coating bottom anti-reflective coating (BARC); sectioning the silicon wafer to measure BARC thicknesses at different profiles; coating the BARC of different measured thicknesses on two flat plates, coating photoresist and exposing respectively; collecting OPC original data of different thicknesses; establishing OPC models of different thicknesses according to the original data; obtaining overlapped region of the crossover layer film and lower layer film through AND operation; amplifying the overlapped region by preset amount to obtain transition region of the crossover layer film; applying the OPC models of different thicknesses to different regions to obtain photolithography mask dimensions of the overlapped region, the transition region and regions outside the two regions. The invention can give precise photolithography pattern under different lower layer pattern profiles, and improve photolithography dimension uniformity and controllability.
Description
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit) method of manufacturing technology, particularly relate to a kind of optical proximity correction method of crossing over pattern.
Background technology
Existing optical approach effect correction (Optical Proximity Correction; OPC) in the method for the accuracy of OPC modeling; Can carry out modeling through the graph data that is collected on the flat plate, said flat plate be meant have only different retes, but not having the silicon chip of lower floor's figure also is only to have smooth membrane structure on the said silicon chip, do not have and comprise step-like graphic structure.But on the silicon chip of general product, often all can comprise lower floor's graphic structure; Adopt existing OPC method just can not reflect of the influence of the pattern of lower floor's figure, so OPC model itself has also lacked technological covering power for the pattern of lower floor's figure for the OPC modeling.
Having leap lower floor pattern in the existing technology is the leap tunic of the lower membrane of step difference d＞2700 dusts, and the method for doing the correction of OPC figure to this lower floor's figure pattern with big step difference becomes an important problem.As shown in Figure 1, be existing structure vertical view with leap tunic of lower floor's figure pattern; As shown in Figure 2, be sectional view along the A axle among Fig. 1.Can know by Fig. 1 and Fig. 2; On silicon chip 1, being formed with lower membrane 2 leaves with shallow trench isolation; Said shallow trench isolation is offed normal in all sides of said lower membrane 2, and the oxide layer 3 among Fig. 2 has comprised the sidewall oxide and the top oxide layer of said shallow trench isolating oxide layer and said lower membrane 2; Leave also to be formed with at said lower membrane 2 and said shallow trench isolation and cross over tunic 4, said leap tunic 4 has been crossed over said lower membrane 2 and has been left with said shallow trench isolation; Be formed with one at said lower membrane 2 places and highly be the step of d.
Existing a kind of optical proximity correction method of crossing over pattern is to adopt bottom antireflective coating (Bottom Anti-Reflection Coating; BARC) reduce the method for step difference; As shown in Figure 3, be at the sectional view that forms on the silicon chip 1 with lower membrane 2 patterns after crossing over tunic 4 and being coated with BARC; Through coating one deck bottom antireflective coating 5 on said silicon chip 1, the thickness one that said bottom antireflective coating 5 forms at no step place is greater than the thickness two that forms at the step place, thereby can reduce the step difference on the silicon chip 1.Though the method that the existing BARC of employing fills can reduce step difference; But the thickness of BARC on the height pattern is the different of said thickness one and said thickness two; Can cause photoetching process (Critical Dimension lithographic dimensioned on the height pattern; CD) difference makes the bigger variation of lithographic dimensioned generation of said leap tunic 4 when crossing over said lower membrane 2, thereby has influenced lithographic accuracy.
Summary of the invention
Technical matters to be solved by this invention provides a kind of optical proximity correction method of crossing over pattern, can when having different lower floors figure pattern, obtain accurately litho pattern, can improve lithographic dimensioned homogeneity and controllability.
For solving the problems of the technologies described above, the optical proximity correction method of leap pattern provided by the invention comprises the steps:
Step 3, be the bottom antireflective coating of thickness two in that to form thickness on the flat plate one be the bottom antireflective coating of thickness one, on flat plate two, form thickness; Again on said flat plate one and said flat plate two respectively resist coating, and make public with identical etching condition; Collect the optical approach effect correction raw data one that obtains said thickness one in said flat plate one, collect the optical approach effect correction raw data two that obtains said thickness two in said flat plate two.
Step 6, the amount that the amplification of said overlapping region is scheduled to obtain overlapping magnification region; Said overlapping magnification region and said leap tunic figure are done and operated, do the transitional region that not operation obtains said leap tunic with said overlapping region again.
Step 7, said optical approach effect correction model one is applied to zone outside said overlapping region and the said transitional region also is that said overlapping region adds the size that zone outside the said transitional region obtains the reticle in the zone outside said overlapping region and the said transitional region; With said optical approach effect correction model two be applied to said overlapping region obtain said overlapping region the reticle size, or use rule-based optical approach effect correction model to be applied to the reticle size that said overlapping region obtains said overlapping region; The utilization process of heterodyning calculates the reticle size of said transitional region.
Said bottom antireflective coating satisfies the requirement with follow-up photoresist coupling.
Amplifying predetermined amount described in the step 6 and be according to thickness is that the variable quantity of variation in thickness 5%～20% of the bottom antireflective coating of said thickness one limits; Because bottom antireflective coating changes to said thickness from said thickness two transitional region is arranged for the moment; The zone that on the basis of said thickness one, changes 5%～20% thickness all is said transitional region, also can be used in the zone that changes 5%～20% thickness on the basis of said thickness one and define the predetermined amount of said amplification.
Perhaps, the changing value that amplifies the photoresist critical size on the photoresist of bottom antireflective coating that predetermined amount is said thickness two by photoresist critical size on the photoresist of the bottom antireflective coating of thickness one and coupling and thickness and coupling described in the step 6 is calculated.Because the predetermined amount of said amplification is in order to obtain said transitional region; And in fact the thickness of the bottom antireflective coating of transitional region changes to said thickness one from said thickness two; Also can be that photoresist critical size on the photoresist of bottom antireflective coating and coupling of said thickness one gradually changes from the photoresist critical size on the photoresist of the bottom antireflective coating of thickness two and coupling to thickness at the critical size of the photoresist that matees on the bottom antireflective coating of said transitional region; So can all be transitional region, also promptly define the predetermined amount of said amplification with this zone with the critical size that on the basis of the photoresist critical size on the photoresist of the bottom antireflective coating of said thickness one and coupling, changes 5%～20%.
The inventive method is carried out the optical approach effect correction respectively through the different-shape place to lower floor's figure and is set up corresponding model and increase the reckoning to the optical approach effect correction of the transitional region between different-shape, can access accurately litho pattern and can improve lithographic dimensioned homogeneity and controllability.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is the structure vertical view that has the leap tunic figure on the silicon chip with lower membrane pattern now;
Fig. 2 is the sectional view along the A axle among Fig. 1;
Fig. 3 is at the sectional view that forms on the silicon chip with lower membrane pattern after crossing over tunic and being coated with BARC;
Fig. 4 is the process flow diagram of the inventive method.
Embodiment
As shown in Figure 4, be the process flow diagram of the inventive method.Embodiment of the invention method comprises the steps:
Step 3, be the bottom antireflective coating of thickness two in that to form thickness on the flat plate one be the bottom antireflective coating of thickness one, on flat plate two, form thickness; Again on said flat plate one and said flat plate two respectively resist coating, and make public with identical etching condition; Collect the optical approach effect correction raw data one that obtains said thickness one in said flat plate one, collect the optical approach effect correction raw data two that obtains said thickness two in said flat plate two.Said flat plate is meant the silicon chip that has only different retes, still do not have lower floor's figure.
Step 6, the amount that the amplification of said overlapping region is scheduled to obtain overlapping magnification region; Said overlapping magnification region and said leap tunic figure are done and operated, do the transitional region that not operation obtains said leap tunic with said overlapping region again.Wherein, the predetermined amount of said amplification is to be that the variable quantity of variation in thickness 5%～20% of the bottom antireflective coating of said thickness one limits according to thickness; Because bottom antireflective coating changes to said thickness from said thickness two transitional region is arranged for the moment; The zone that on the basis of said thickness one, changes 5%～20% thickness all is said transitional region, also can be used in the zone that changes 5%～20% thickness on the basis of said thickness one and define the predetermined amount of said amplification.Perhaps, the changing value that amplifies the photoresist critical size on the photoresist of bottom antireflective coating that predetermined amount is said thickness two by photoresist critical size on the photoresist of the bottom antireflective coating of thickness one and coupling and thickness and coupling described in the step 6 is calculated.Because the predetermined amount of said amplification is in order to obtain said transitional region; And in fact the thickness of the bottom antireflective coating of transitional region changes to said thickness one from said thickness two; Also can be that photoresist critical size on the photoresist of bottom antireflective coating and coupling of said thickness one gradually changes from the photoresist critical size on the photoresist of the bottom antireflective coating of thickness two and coupling to thickness at the critical size of the photoresist that matees on the bottom antireflective coating of said transitional region; So can all be transitional region, also promptly define the predetermined amount of said amplification with this zone with the critical size that on the basis of the photoresist critical size on the photoresist of the bottom antireflective coating of said thickness one and coupling, changes 5%～20%.
Step 7, said optical approach effect correction model one is applied to the size that zone outside said overlapping region and the said transitional region obtains the reticle in the zone outside said overlapping region and the said transitional region; With said optical approach effect correction model two be applied to said overlapping region obtain said overlapping region the reticle size, or use rule-based optical approach effect correction model to be applied to the reticle size that said overlapping region obtains said overlapping region; The utilization process of heterodyning calculates the reticle size of said transitional region.
More than through specific embodiment the present invention has been carried out detailed explanation, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be regarded as protection scope of the present invention.
Claims (3)
1. an optical proximity correction method of crossing over pattern is characterized in that, comprises the steps:
Step 1, on silicon chip, form to cross over tunic, and on said leap tunic, be coated with bottom antireflective coating with lower membrane step appearance;
Step 2, the formed said silicon chip of step 1 is cut into slices, and measure the thickness of said bottom antireflective coating, obtain not having the thickness one and the thickness two that the step place is arranged at step place respectively;
Step 3, be the bottom antireflective coating of thickness two in that to form thickness on the flat plate one be the bottom antireflective coating of thickness one, on flat plate two, form thickness; Again on said flat plate one and said flat plate two respectively resist coating, and make public with identical etching condition; Collect the optical approach effect correction raw data one that obtains said thickness one in said flat plate one, collect the optical approach effect correction raw data two that obtains said thickness two in said flat plate two;
Step 4, set up the optical approach effect correction model one of not crossing over said lower membrane, set up the optical approach effect correction model two of crossing over said lower membrane according to said optical approach effect correction raw data two according to said optical approach effect correction raw data one;
Step 5, through to said leap tunic figure and said lower membrane figure do Boolean calculation with operation, obtain the overlapping region of said leap tunic and said lower membrane;
Step 6, the amount that the amplification of said overlapping region is scheduled to obtain overlapping magnification region; Said overlapping magnification region and said leap tunic figure are done and operated, do the transitional region that not operation obtains said leap tunic with said overlapping region again;
Step 7, said optical approach effect correction model one is applied to the size that zone outside said overlapping region and the said transitional region obtains the reticle in the zone outside said overlapping region and the said transitional region; With said optical approach effect correction model two be applied to said overlapping region obtain said overlapping region the reticle size, or use rule-based optical approach effect correction model to be applied to the reticle size that said overlapping region obtains said overlapping region; The utilization process of heterodyning calculates the reticle size of said transitional region.
2. cross over the optical proximity correction method of pattern according to claim 1, it is characterized in that: said bottom antireflective coating satisfies the requirement with follow-up photoresist coupling.
3. cross over the optical proximity correction method of pattern according to claim 1, it is characterized in that: amplifying predetermined amount described in the step 6 and be according to thickness is that the variable quantity of variation in thickness 5%～20% of the bottom antireflective coating of said thickness one limits; The changing value of the photoresist critical size on the bottom antireflective coating that perhaps is said thickness two by photoresist critical size on the photoresist of the bottom antireflective coating of thickness one and coupling and thickness and the photoresist of coupling is calculated.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103513506A (en) * | 2012-06-19 | 2014-01-15 | 上海华虹Nec电子有限公司 | Optical proximity effect correction method |
| CN105223770A (en) * | 2014-05-27 | 2016-01-06 | 无锡华润上华半导体有限公司 | The method and system of special processing figure is marked in optical approach effect correction |
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| US6200710B1 (en) * | 1998-03-18 | 2001-03-13 | Nikon Corporation | Methods for producing segmented reticles |
| US6576486B2 (en) * | 2001-01-17 | 2003-06-10 | United Microelectronics Corp. | Unlanded process in semiconductor manufacture |
| CN101349861A (en) * | 2007-07-19 | 2009-01-21 | 上海华虹Nec电子有限公司 | Method of smoothing regulation type optical approach correcting light mask pattern |
| US20090081882A1 (en) * | 2007-09-20 | 2009-03-26 | Fujitsu Microelectronics Limited | Method for manufacturing semiconductor device and method for designing photomask pattern |
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2010
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| US6200710B1 (en) * | 1998-03-18 | 2001-03-13 | Nikon Corporation | Methods for producing segmented reticles |
| US6576486B2 (en) * | 2001-01-17 | 2003-06-10 | United Microelectronics Corp. | Unlanded process in semiconductor manufacture |
| CN101349861A (en) * | 2007-07-19 | 2009-01-21 | 上海华虹Nec电子有限公司 | Method of smoothing regulation type optical approach correcting light mask pattern |
| US20090081882A1 (en) * | 2007-09-20 | 2009-03-26 | Fujitsu Microelectronics Limited | Method for manufacturing semiconductor device and method for designing photomask pattern |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103513506A (en) * | 2012-06-19 | 2014-01-15 | 上海华虹Nec电子有限公司 | Optical proximity effect correction method |
| CN103513506B (en) * | 2012-06-19 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | Optical proximity correction method |
| CN105223770A (en) * | 2014-05-27 | 2016-01-06 | 无锡华润上华半导体有限公司 | The method and system of special processing figure is marked in optical approach effect correction |
| CN105223770B (en) * | 2014-05-27 | 2019-07-23 | 无锡华润上华科技有限公司 | The method and system of specially treated figure is marked in optical approach effect amendment |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131223 |
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Effective date of registration: 20131223 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |