CN102473831B - 铝-镁-硅复合材料及其制造方法和使用了该复合材料的热电转换材料、热电转换元件以及热电转换组件 - Google Patents
铝-镁-硅复合材料及其制造方法和使用了该复合材料的热电转换材料、热电转换元件以及热电转换组件 Download PDFInfo
- Publication number
- CN102473831B CN102473831B CN201080033425.2A CN201080033425A CN102473831B CN 102473831 B CN102473831 B CN 102473831B CN 201080033425 A CN201080033425 A CN 201080033425A CN 102473831 B CN102473831 B CN 102473831B
- Authority
- CN
- China
- Prior art keywords
- matrix material
- thermo
- thermoelectric conversion
- content
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 130
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 229910052749 magnesium Inorganic materials 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000011777 magnesium Substances 0.000 title abstract description 71
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract description 31
- 239000010703 silicon Substances 0.000 title abstract description 19
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 title abstract description 12
- 239000002131 composite material Substances 0.000 title abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 82
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 16
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 239000011159 matrix material Substances 0.000 claims description 109
- 229910018566 Al—Si—Mg Inorganic materials 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 79
- 239000002994 raw material Substances 0.000 claims description 44
- 238000002844 melting Methods 0.000 claims description 38
- 230000008018 melting Effects 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 18
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 239000002783 friction material Substances 0.000 claims description 4
- 229910052573 porcelain Inorganic materials 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 58
- 239000004411 aluminium Substances 0.000 description 27
- 238000012360 testing method Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 22
- 239000000843 powder Substances 0.000 description 21
- 239000002019 doping agent Substances 0.000 description 16
- 238000010298 pulverizing process Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- MKPXGEVFQSIKGE-UHFFFAOYSA-N [Mg].[Si] Chemical compound [Mg].[Si] MKPXGEVFQSIKGE-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000006835 compression Effects 0.000 description 8
- 238000007906 compression Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004567 concrete Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910021338 magnesium silicide Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 229910002909 Bi-Te Inorganic materials 0.000 description 1
- 229910020712 Co—Sb Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- VJTAZCKMHINUKO-UHFFFAOYSA-M chloro(2-methoxyethyl)mercury Chemical compound [Cl-].COCC[Hg+] VJTAZCKMHINUKO-UHFFFAOYSA-M 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical class [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6261—Milling
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C23/00—Alloys based on magnesium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C24/00—Alloys based on an alkali or an alkaline earth metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/401—Alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/428—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6565—Cooling rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6582—Hydrogen containing atmosphere
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
Al组成比(at%) | 可塑性 |
0.0 | × |
1.0 | ○ |
2.0 | ○ |
3.0 | ○ |
5.8 | ○ |
10 | ○ |
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009174428 | 2009-07-27 | ||
JP2009-174428 | 2009-07-27 | ||
PCT/JP2010/062509 WO2011013609A1 (ja) | 2009-07-27 | 2010-07-26 | アルミニウム・マグネシウム・ケイ素複合材料及びその製造方法、並びに該複合材料を用いた熱電変換材料、熱電変換素子、及び熱電変換モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102473831A CN102473831A (zh) | 2012-05-23 |
CN102473831B true CN102473831B (zh) | 2015-03-25 |
Family
ID=43529264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080033425.2A Expired - Fee Related CN102473831B (zh) | 2009-07-27 | 2010-07-26 | 铝-镁-硅复合材料及其制造方法和使用了该复合材料的热电转换材料、热电转换元件以及热电转换组件 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20120118343A1 (zh) |
EP (1) | EP2461384A1 (zh) |
JP (1) | JP5629920B2 (zh) |
KR (1) | KR101365251B1 (zh) |
CN (1) | CN102473831B (zh) |
TW (1) | TWI485266B (zh) |
WO (1) | WO2011013609A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI569499B (zh) * | 2015-05-22 | 2017-02-01 | 國立成功大學 | 複合電極材料及其製作方法、包含該複合電極材料之複合電極及其製作方法、以及包含該複合電極之鋰電池 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011002035A1 (ja) * | 2009-06-30 | 2011-01-06 | 学校法人東京理科大学 | マグネシウム-ケイ素複合材料及びその製造方法、並びに該複合材料を用いた熱電変換材料、熱電変換素子、及び熱電変換モジュール |
JP5641474B2 (ja) | 2010-11-08 | 2014-12-17 | 日立化成株式会社 | Mg2Si基化合物から成る熱電材料の製造方法 |
JP5737566B2 (ja) * | 2011-03-10 | 2015-06-17 | 日立化成株式会社 | マグネシウムシリサイド焼結体の製造方法及びそれを用いた熱電変換素子の製造方法 |
WO2013047474A1 (ja) * | 2011-09-26 | 2013-04-04 | 学校法人東京理科大学 | 焼結体、熱電変換素子用焼結体、熱電変換素子及び熱電変換モジュール |
WO2013112710A1 (en) | 2012-01-25 | 2013-08-01 | Alphabet Energy, Inc. | Modular thermoelectric units for heat recovery systems and methods thereof |
TWI499101B (zh) | 2012-07-13 | 2015-09-01 | Ind Tech Res Inst | 熱電轉換結構及使用其之散熱結構 |
US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
US9065017B2 (en) | 2013-09-01 | 2015-06-23 | Alphabet Energy, Inc. | Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same |
CN105330289B (zh) * | 2014-08-14 | 2018-08-31 | 清华大学 | 一种硫氧化钆(Gd2O2S)闪烁陶瓷制备方法 |
US10930834B2 (en) | 2015-02-09 | 2021-02-23 | University Of Houston System | Synthesis of N-type thermoelectric materials, including Mg—Sn—Ge materials, and methods for fabrication thereof |
JP6811539B2 (ja) * | 2016-03-07 | 2021-01-13 | 古河機械金属株式会社 | 熱電変換材料の製造方法 |
JP6390662B2 (ja) | 2016-04-22 | 2018-09-19 | トヨタ自動車株式会社 | 熱電材料の製造方法 |
JP6536615B2 (ja) | 2017-03-31 | 2019-07-03 | トヨタ自動車株式会社 | 熱電変換材料及びその製造方法 |
CN110622327B (zh) | 2017-05-19 | 2024-03-12 | 日东电工株式会社 | 半导体烧结体、电气电子部件、以及半导体烧结体的制造方法 |
JP7248157B2 (ja) * | 2017-06-29 | 2023-03-29 | 三菱マテリアル株式会社 | 熱電変換材料、及び、熱電変換材料の製造方法 |
JP7176248B2 (ja) * | 2017-06-29 | 2022-11-22 | 三菱マテリアル株式会社 | 熱電変換材料、熱電変換素子、熱電変換モジュール、及び、熱電変換材料の製造方法 |
JP7121227B2 (ja) * | 2017-06-29 | 2022-08-18 | 三菱マテリアル株式会社 | 熱電変換材料、及び、熱電変換材料の製造方法 |
JP7159854B2 (ja) * | 2018-12-26 | 2022-10-25 | 三菱マテリアル株式会社 | 熱電変換材料、熱電変換素子、及び、熱電変換モジュール |
KR102199791B1 (ko) * | 2019-07-02 | 2021-01-07 | 울산과학기술원 | 마찰 전계 효과를 이용한 열전발전소자 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2307231C (en) * | 1997-10-24 | 2006-06-20 | Sumitomo Special Metals Co., Ltd. | Silicon based conductive material and process for production thereof |
JPH11274578A (ja) | 1998-03-19 | 1999-10-08 | Matsushita Electric Ind Co Ltd | 熱電変換材料の製造方法および熱電変換モジュール |
JP3600486B2 (ja) * | 1999-08-24 | 2004-12-15 | セイコーインスツル株式会社 | 熱電変換素子の製造方法 |
US6277351B1 (en) * | 2000-03-20 | 2001-08-21 | Carl Francis Swinehart | Crucible for growing macrocrystals |
JP2002194472A (ja) * | 2000-12-28 | 2002-07-10 | Kanazawa Inst Of Technology | 軽量高強度マグネシウム又はマグネシウム合金、及びその製造方法 |
JP2002368291A (ja) * | 2001-06-04 | 2002-12-20 | Tokyo Yogyo Co Ltd | 熱電材料 |
WO2003027341A1 (fr) | 2001-09-25 | 2003-04-03 | Center For Advanced Science And Technology Incubation, Ltd. | Materiau composite a base de magnesium |
JP2005129765A (ja) * | 2003-10-24 | 2005-05-19 | Hitachi Metals Ltd | 熱発電モジュールおよびそれに用いる型枠 |
JP2005314805A (ja) | 2004-03-29 | 2005-11-10 | Toudai Tlo Ltd | マグネシウム化合物、金属材料およびマグネシウム化合物の製造方法 |
BRPI0512696B1 (pt) * | 2004-06-30 | 2015-09-01 | Sumitomo Electric Industries | Método para produzir produto de liga de magnésio |
JP4496365B2 (ja) * | 2004-10-27 | 2010-07-07 | 独立行政法人産業技術総合研究所 | 熱電材料及びその製造方法 |
JP2008001558A (ja) * | 2006-06-22 | 2008-01-10 | Sumitomo Metal Electronics Devices Inc | 窒化アルミニウム成形体の焼成方法と焼成用治具 |
KR20090107491A (ko) * | 2006-12-20 | 2009-10-13 | 소와 케이디이 가부시키가이샤 | 열전변환 재료, 그 제조 방법 및 열전변환 소자 |
-
2010
- 2010-07-23 TW TW099124370A patent/TWI485266B/zh not_active IP Right Cessation
- 2010-07-26 US US13/386,873 patent/US20120118343A1/en not_active Abandoned
- 2010-07-26 CN CN201080033425.2A patent/CN102473831B/zh not_active Expired - Fee Related
- 2010-07-26 JP JP2010167008A patent/JP5629920B2/ja not_active Expired - Fee Related
- 2010-07-26 KR KR1020127004521A patent/KR101365251B1/ko not_active IP Right Cessation
- 2010-07-26 WO PCT/JP2010/062509 patent/WO2011013609A1/ja active Application Filing
- 2010-07-26 EP EP10804355A patent/EP2461384A1/en not_active Withdrawn
-
2015
- 2015-03-27 US US14/671,045 patent/US20150207056A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI569499B (zh) * | 2015-05-22 | 2017-02-01 | 國立成功大學 | 複合電極材料及其製作方法、包含該複合電極材料之複合電極及其製作方法、以及包含該複合電極之鋰電池 |
Also Published As
Publication number | Publication date |
---|---|
CN102473831A (zh) | 2012-05-23 |
KR101365251B1 (ko) | 2014-02-20 |
TWI485266B (zh) | 2015-05-21 |
TW201127966A (en) | 2011-08-16 |
KR20120049286A (ko) | 2012-05-16 |
US20120118343A1 (en) | 2012-05-17 |
JP5629920B2 (ja) | 2014-11-26 |
JP2011049538A (ja) | 2011-03-10 |
EP2461384A1 (en) | 2012-06-06 |
WO2011013609A1 (ja) | 2011-02-03 |
US20150207056A1 (en) | 2015-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102473831B (zh) | 铝-镁-硅复合材料及其制造方法和使用了该复合材料的热电转换材料、热电转换元件以及热电转换组件 | |
Bux et al. | Mechanochemical synthesis and thermoelectric properties of high quality magnesium silicide | |
Tee et al. | Thermoelectric silver‐based chalcogenides | |
CN101589480B (zh) | 热电转换材料、其制造方法及热电转换元件 | |
JP6029256B2 (ja) | マグネシウム−ケイ素複合材料及びその製造方法、並びに該複合材料を用いた熱電変換材料、熱電変換素子、及び熱電変換モジュール | |
Zhang et al. | Phase Segregation and Superior Thermoelectric Properties of Mg2Si1–x Sb x (0≤ x≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis | |
US11114600B2 (en) | Polycrystalline magnesium silicide and use thereof | |
KR102579987B1 (ko) | 반도체 소결체, 전기·전자 부재 및 반도체 소결체 제조방법 | |
Zhou et al. | Composites of higher manganese silicides and nanostructured secondary phases and their thermoelectric properties | |
Boldrini et al. | Ultrafast high-temperature sintering and thermoelectric properties of n-doped Mg2Si | |
Song et al. | Enhanced thermoelectric properties in p‐type Bi0. 4Sb1. 6Te3 alloy by combining incorporation and doping using multi‐scale CuAlO2 particles | |
JP5931413B2 (ja) | p型熱電変換材料及びその製造方法、並びに、熱電変換素子及び熱電変換モジュール | |
WO2013047475A1 (ja) | マグネシウムシリサイド、熱電変換材料、焼結体、熱電変換素子用焼結体、熱電変換素子、及び熱電変換モジュール | |
Trivedi et al. | Magnesium and manganese silicides for efficient and low cost thermo-electric power generation | |
Ruan et al. | Preparation and thermoelectric properties of SiO 2/β-Zn 4 Sb 3 nanocomposite materials | |
JP2003138327A (ja) | 亜鉛アンチモン化合物焼結体及びその製造法 | |
Jiang et al. | PM Non Ferrous & Special Materials: Thermoelectric Properties of Ag Doped Polycrystalline P-type Bi^ sub 2^ Te^ sub 3^ Based Materials Prepared by the Rapid Hot-Pressing Route |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: DOW CORNING TORAY CO., LTD. Effective date: 20150211 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150211 Address after: Tokyo, Japan Applicant after: Tokyo University of Science Ed (JP) Address before: Tokyo, Japan Applicant before: Tokyo University of Science Ed (JP) Applicant before: Dow Corning Toray Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150325 Termination date: 20160726 |
|
CF01 | Termination of patent right due to non-payment of annual fee |