CN102456831B - Memory cell of phase change random access memory - Google Patents

Memory cell of phase change random access memory Download PDF

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CN102456831B
CN102456831B CN 201010524974 CN201010524974A CN102456831B CN 102456831 B CN102456831 B CN 102456831B CN 201010524974 CN201010524974 CN 201010524974 CN 201010524974 A CN201010524974 A CN 201010524974A CN 102456831 B CN102456831 B CN 102456831B
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phase change
electrode
random access
access memory
memory cell
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CN 201010524974
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CN102456831A (en
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吴关平
徐成
刘燕
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中芯国际集成电路制造(上海)有限公司
中芯国际集成电路制造(北京)有限公司
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Abstract

本发明公开了一种相变随机存取存储器的存储单元,包括:相变材料层和柱状同轴电极;柱状同轴电极包括位于柱状同轴电极的轴线位置的第一电极、嵌套在第一电极之外并与第一电极同轴的第二电极及填充在第一电极和第二电极之间的第一绝缘层;相变材料层与第一电极和第二电极的同一侧连接。 The present invention discloses a memory cell of a phase-change random access memory, comprising: a phase change material layer and the columnar electrode coaxially; coaxial cylindrical electrodes includes a first electrode located in the columnar axis position coaxial electrodes, the first nested and an electrode outside the first electrode and the second electrode coaxially filled between the first electrode and the second electrode, a first insulating layer; the same side of the phase change material layer and the first electrode and the second electrode is connected. 本发明还公开了一种相变随机存取存储器,包括:控制电路、存储单元层、选通器件层和衬底。 The present invention also discloses a phase-change random access memory, comprising: a control circuit, memory cell layer, the device layer and the substrate gate. 根据本发明的相变随机存取存储器的存储单元和相变随机存取存储器可以有效地降低相变随机存取存储器和使用相变随机存取存储器的电路的发热量和功耗。 Can effectively reduce power consumption and heat the phase change random access memory and a phase change random access memory circuit according to a phase change memory cell of the present invention, a random access memory and a phase change random access memory. 并经济地提高相变随机存取存储器和使用相变随机存取存储器的电路的性能。 And economically improve the performance of a phase change random access memory and the circuit using a phase-change random access memory.

Description

相变随机存取存储器的存储单元 Phase change memory cell of a random access memory

技术领域 FIELD

[0001] 本发明涉及半导体技术领域,尤其涉及一种相变随机存取存储器(PCRAM)的存储单元。 [0001] The present invention relates to semiconductor technology, and more particularly relates to a phase change memory cell random access memory (the PCRAM) a.

背景技术 Background technique

[0002] 相变材料(例如Ge-Sb-Te相变材料)通过电脉冲引起的局部发热而将其相态转变为晶态和非晶态,相变随机存取存储器就是利用这一特性存储二进制信息的半导体器件。 [0002] The phase change material (e.g., Ge-Sb-Te phase change material) caused by localized heating of the electrical pulses to the phase transition to the amorphous state and crystalline state, phase change random access memory storage is to use this feature the semiconductor device of binary information. 相变随机存取存储器是基于电阻的存储器,通过相变材料在晶态和非晶态间的转换而相应呈现低阻和高阻的电阻特性来达到存储二进制信息的目的。 Phase change random access memory is a resistance-based memory, by switching the phase change material between amorphous and crystalline state and exhibit a respective low resistance and the high resistance of the resistance characteristics to achieve the purpose of storing binary information. 在相变随机存取存储器中,存储二进制信息的存储单元包括相变材料层和电极。 In a phase-change random access memory storage unit stores binary information includes a phase change material layer and the electrode.

[0003] 图1A是现有技术的相变随机存取存储器的存储单元的结构图。 [0003] FIG 1A is a configuration diagram of a phase change memory cell of the prior art random access memory. 如图1A所示,其中包括:顶部电极101、相变材料层102和底部电极103。 1A, which comprises: a top electrode 101, phase change material layer 102 and the bottom electrode 103. 不同强度的电流流经相变材料层102,通过电流流过相变材料层102所产生的热效应将相变材料由晶态(SET态)转变为非晶态(RESET态),即可以对相变材料进行复位(RESET)操作。 Different intensity of the current flowing through the phase change material layer 102, current flows through the phase change material layer of the thermal effect generated by the phase change material 102 will transition from the crystalline state (SET state) is amorphous (RESET state), i.e., the phase can change material reset (rESET) operations. 而将相变材料由非晶态转变为晶态的操作相应称为SET。 And the phase change material from amorphous to crystalline transition of operation of the respective called SET. 当进行SET操作时,需要施加一个长且强度中等的电压或电流脉冲,使相变材料的温度升高到结晶温度以上、熔化温度以下,并保持一定的时间(一般大于50 ns),使相变材料由非晶态转化为晶态,由高阻变为低阻。 When the SET operation, is necessary to apply a long and moderate voltage or current pulse, the temperature of the phase change material above the crystallization temperature rises, the melting temperature, and to maintain a certain period of time (typically greater than 50 ns), the phase change material from amorphous into crystalline state, a high resistance to low resistance. 当进行RESET操作时,需要施加一个短而强的电流脉冲,将电能转变成热能,使相变材料的温度升高到熔化温度以上,经快速冷却就可以实现相变材料的由晶态向非晶态的转化,即由低阻变为高阻,从而实现基于电阻的存储器功能。 When the RESET operation, necessary to apply a short, strong current pulses, converting electrical energy into heat energy, raising the temperature of the phase change material above its melting temperature, by the rapid cooling can be achieved by the phase change material to non-crystalline crystalline conversion, i.e., the low resistance becomes high impedance, thereby realizing the memory function based on the resistance.

[0004] 由于RESET操作需要使相变材料的温度升高到融化温度以上,因此其需要的电流脉冲较高。 [0004] Since the RESET operation requires a temperature of the phase change material is raised to above the melting temperature, so it needs high current pulses. 而相应较高的电流脉冲会给由大量存储单元构成的相变随机存取存储器带来发热量大的问题,进而会给相变随机存取存储器和使用相变随机存取存储器的电路带来功耗高、不稳定的因素,影响相变随机存取存储器和使用相变随机存取存储器的电路的性能。 Large amount of heat brought phase changing random access memory will correspondingly high current pulse of a large number of memory units, and thus the circuit will phase change random access memory and random access memory using a phase change brought high power, instability, affect the phase change random access memory and performance of a circuit using a phase change random access memory. 因此,如何有效地降低相变随机存取存储器的RESET电流就成为亟待解决的问题。 Therefore, how to effectively reduce the current RESET phase change random access memory has become a serious problem.

[0005] 现有技术降低相变随机存取存储器的RESET电流的方法有以下几种:第一种方法是对相变材料进行改进,使相变材料的由晶态向非晶态转化的温度降低。 [0005] the prior art to reduce the current RESET phase change random access memory are the following methods: The first method is improved phase change material, the phase change material from the crystalline to the amorphous transformation temperature reduce. 从而使较低的RESET电流所产生的热量也能使相变材料由晶态转化为非晶态,从而达到进行RESET操作的目的。 RESET low so that heat generated by the current can also be of a crystalline phase change material into an amorphous state, so as to achieve the purpose of RESET operation. 这种方法的缺陷在于改变现有相变材料的由晶态向非晶态转化的温度的技术困难很大、成本很高,并且会影响相变材料的稳定性,很难在产业中应用。 Drawback of this approach is that changes to the technical difficulties amorphous transformation temperature greatly from the conventional phase change material is a crystalline, high cost, and can affect the stability of the phase change material, is difficult to apply in industry. 第二种方法是对相变材料的结构进行改进,例如将相变材料层改为多孔结构,从而增加RESET操作时单位相变材料流过的电流密度。 The second method is the configuration of the phase change material to improve, for example, the phase change material layer to a porous structure, thereby increasing the current density at the operating unit RESET phase change material flows. 这种方法的缺陷在于改变相变材料的结构的技术困难较大,相应降低的RESET操作的电流的幅度较小,同时需要在相变随机存取存储器制造工艺中相应增加很多工序,不但大幅增加了生产成本,并且其产品的品质也很难控制。 The drawback of this method is that the technology of changing the structure of the phase change material is quite difficult, the smaller the amplitude correspondingly reduced current RESET operation, while the required phase change random access memory in a corresponding increase in many manufacturing process step, not only a substantial increase the cost of production, and the quality of their products is difficult to control. 第三种方法是减小底部电极103的接触区域,进而增大RESET操作时单位相变材料流过的电流密度。 A third method is to reduce the contact area of ​​the bottom electrode 103, and thus increase the current density during operation unit RESET phase change material flows. 这种方法的缺陷在于其受相变随机存取存储器的结构和制造工艺的限制,底部电极103的接触区域不可能无限减小。 A drawback of this method is that by the structure and manufacturing process a phase change random access memory limitations, the contact area of ​​the bottom electrode 103 can not be infinitely reduced. 同时现有技术所采用的相变随机存取存储器的结构会导致流过相变随机存取存储器的存储单元的电流呈如图1B所示的倒圆锥状。 While the phase change random access memory structure of the prior art employed in the memory cell current will cause a phase change random access memory flowing through the inverted conical shape as shown in FIG. 1B. 此时流经相变材料层102的电流的分布就会不均匀,会产生高电流密度区102A和低电流密度区102B,高电流密度区102A流过的电流密度大,低电流密度区102B流过的电流密度小。 At this time, flowing through the phase change material layer 102 of the current distribution will be uneven, will produce high current density region 102A and 102B low current density area, a high current density high current density region flows 102A, 102B flows low current density area over-current density small. 这样就导致相变材料层102的受热不均,从而使降低相变随机存取存储器的RESET电流的效果十分有限。 This results in a phase change material layer 102 is heated unevenly, thereby reducing the current RESET phase change random access memory effect is very limited.

[0006] 因此,需要一种能够有效且经济地降低相变随机存取存储器的RESET电流的相变随机存取存储器的存储单元,以降低相变随机存取存储器和使用相变随机存取存储器的电路的RESET电流和功耗。 [0006] Accordingly, a need exists to effectively and economically reduce the phase change memory cell of phase change random access memory RESET current random access memory to reduce a phase change random access memory and a phase change random access memory the RESET current, and power consumption of the circuit.

发明内容 SUMMARY

[0007] 在发明内容部分中引入了一系列简化形式的概念,这将在具体实施方式部分中进一步详细说明。 [0007] introduced the concept of a series of simplified form in the Summary section, which will be described in further detail in the Detailed Description. 本发明的发明内容部分并不意味着要试图限定出所要求保护的技术方案的关键特征和必要技术特征,更不意味着试图确定所要求保护的技术方案的保护范围。 This summary of the present invention is not intended to identify key features or essential features of the claimed technical solutions, nor is it intended to determine the scope of the claimed technical solution.

[0008] 为解决现有技术无法有效且经济地降低相变随机存取存储器的RESET电流的问题,本发明提供了一种相变随机存取存储器的存储单元,所述存储单元包括相变材料层和柱状同轴电极;所述柱状同轴电极包括位于所述柱状同轴电极的轴线位置的第一电极、嵌套在所述第一电极之外并与所述第一电极同轴的第二电极及填充在所述第一电极和所述第二电极之间的第一绝缘层;所述相变材料层与所述第一电极和所述第二电极的同一侧连接。 [0008] In order to solve the prior art can not effectively and economically reduce the current RESET phase change random access memory problems, the present invention provides a phase change memory cell of a random access memory, the memory cell comprising a phase change material coaxial layer and the columnar electrode; coaxially with the cylindrical electrode comprises a first electrode of the coaxial electrode columnar axis position, nested outside of the first electrode and the second electrode coaxially with the first filling the first two electrodes and an insulating layer between the first electrode and the second electrode; said phase change material layer is connected to the same side of the first electrode and the second electrode.

[0009] 进一步的,所述相变材料层覆盖有用于保护所述相变材料层的硬质绝缘氧化物外壳,所述氧化物外壳由SiO2构成。 [0009] Further, the phase change material layer is covered with an insulating oxide rigid housing for protecting the phase change material layer, the oxide shell composed of SiO2.

[0010] 进一步的,所述第二电极的外柱面具有包裹所述第二电极的第二绝缘层。 A second insulating layer [0010] Further, the outer cylindrical surface of the second electrode of the second electrode has a wrapping.

[0011] 进一步的,所述柱状同轴电极的材料是氮化钛或钨。 [0011] Further, coaxially with the columnar electrode material is titanium nitride or tungsten.

[0012] 进一步的,所述第一绝缘层和所述第二绝缘层的材料是SiN。 [0012] Further, the material of the second insulating layer and the first insulating layer is SiN.

[0013] 进一步的,所述相变材料层的材料是Ge-Sb-Te相变材料、Ge-Sb-Te-O相变材料或S1-Sb-Te相变材料。 Materials [0013] Further, the phase change material layer is a Ge-Sb-Te phase change material, Ge-Sb-Te-O or phase change material S1-Sb-Te phase change material.

[0014] 进一步的,其特征在于,所述相变材料层的厚度为90nm至IlOnm,直径为90nm至120nm,所述第一电极的直径为25nm至35nm,且所述第二电极的厚度为25nm至35nm。 [0014] Further, characterized in that the thickness of said phase change material layer is 90nm to IlOnm, 90nm to 120 nm in diameter, the diameter of the first electrode is 25nm to 35nm, and the thickness of the second electrode is 25nm to 35nm.

[0015] 进一步的,所述第一绝缘层的厚度为25nm至35nm。 [0015] Further, the thickness of the first insulating layer is 25nm to 35nm.

[0016] 本发明还提供了一种相变随机存取存储器,所述存储器包括:控制电路、存储单元层、选通器件层和衬底; [0016] The present invention further provides a phase change random access memory, the memory comprising: a control circuit, memory cell layer, gating device layer and the substrate;

[0017] 所述存储单元层位于所述选通器件层上方,并包含权利要求1-7中任一项所述的存储单兀; [0017] The memory cell layer located over the device layer of the gate, and comprising a storage unit as claimed in claim 1-7 Wu claimed in any one of;

[0018] 所述选通器件层位于所述衬底上,并包含选通器件,所述选通器件层用于控制所述存储单元的选通, [0018] The gating device positioned on the substrate layer, and comprising a gating device, the gating through the device layer is selected for controlling the memory cell,

[0019] 所述控制电路与所述选通器件层连接,并通过所述选通器件控制所述存储单元的 [0019] The control circuit is connected to the gating device layer, and the storage unit by controlling the gate device

读写操作。 Read and write operations.

[0020] 进一步的,所述选通器件为开关二极管和/或开关三极管。 [0020] Further, the gating device is a switching diode and / or transistor switches.

[0021] 根据本发明的相变随机存取存储器的存储单元和包含该存储单元的相变随机存取存储器可以有效地降低相变随机存取存储器的存储单元的RESET电流,从而减小相变随机存取存储器和使用相变随机存取存储器的电路的发热量和功耗。 [0021] can effectively reduce the memory cell of phase change random access memory according to the present invention and a phase change random access memory containing the memory cell current RESET phase change memory cell of a random access memory, thereby reducing the phase transition random access memory and a phase change heat and power of a random access memory circuit. 同时在制造本发明披露的相变随机存取存储器的存储单元的过程中,不需对相变材料和相变材料层的结构进行改进,可以有效且经济地提高相变随机存取存储器和使用相变随机存取存储器的电路的性倉泛。 While the process of manufacturing the memory cell of phase change random access memory according to the present invention is disclosed in, without the structure of the phase change material and phase change material layer is improved, it can be effectively and economically improve the phase-change random access memory and use phase change random access memory circuit of the cartridge pan.

附图说明 BRIEF DESCRIPTION

[0022] 本发明的下列附图在此作为本发明的一部分用于理解本发明。 [0022] The following figures of the present invention is used herein as part of the present invention to understand the invention. 附图中示出了本发明的实施方式及其描述,用来解释本发明的原理。 In the embodiment shown in the drawings and described embodiment of the invention, serve to explain the principles of the invention. 在附图中, In the drawings,

[0023] 图1A是现有技术的相变随机存取存储器的存储单元的结构图; [0023] FIG 1A is a prior art block diagram of a phase change memory cell of a random access memory;

[0024] 图1B是电流流过现有技术的相变随机存取存储器的存储单元时的电流密度分布示意图; [0024] FIG. 1B is a current flowing through the current density of the prior art phase change random access memory cells of the memory a schematic view of distribution;

[0025] 图2A是根据本发明的一个实施方式的相变随机存取存储器的存储单元的剖视结构图; [0025] FIG. 2A is a cross-sectional structural view of a memory cell of a random access memory according to a phase change embodiment of the present invention;

[0026] 图2B是根据本发明的一个实施方式的相变随机存取存储器的存储单元的柱状同轴电极的立体结构图; [0026] FIG. 2B is a perspective configuration diagram of a coaxial cylindrical electrodes random access memory cells of the memory in accordance with a phase change embodiment of the present invention;

[0027] 图3是根据本发明的一个优选实施方式的相变随机存取存储器的存储单元进行RESET操作时的温度分布示意图; [0027] FIG 3 is a temperature profile when a RESET operation of phase change memory cell according to the schematic random access memory of a preferred embodiment of the present invention;

[0028] 图4是根据本发明的一个实施方式的相变随机存取存储器的结构示意图。 [0028] FIG. 4 is a schematic structural diagram of a random access memory according to a phase change embodiment of the present invention.

具体实施方式 Detailed ways

[0029] 在下文的描述中,给出了大量具体的细节以便提供对本发明更为彻底的理解。 [0029] In the following description, numerous specific details are given to provide a more thorough understanding of the present invention. 然而,对于本领域技术人员来说显而易见的是,本发明可以无需一个或多个这些细节而得以实施。 However, the skilled person it will be apparent that the present invention may be practiced without one or more of these details are implemented. 在其他的例子中,为了避免与本发明发生混淆,对于本领域公知的一些技术特征未进行描述。 In other examples, in order to avoid confusion with the present invention, known in the art for some of the technical features are not described.

[0030] 为了彻底了解本发明,将在下列的描述中提出详细的结构,以便说明本发明是如何有效且经济地降低相变随机存取存储器的RESET电流的。 [0030] For a thorough understanding of the present invention will be set forth in the following detailed description of the structure in order to illustrate how the present invention is to efficiently and economically reduce the current RESET phase change random access memory of. 显然,本发明的施行并不限定于半导体领域的技术人员所熟习的特殊细节。 Obviously, the purposes of the present invention is not limited to the specific details of the semiconductor skilled in the art are familiar with. 本发明的较佳实施方式详细描述如下,然而除了这些详细描述外,本发明还可以具有其他实施方式。 Preferred embodiment of the present invention are described in detail below, however, in addition to the detailed description, the present invention also may have other embodiments.

[0031] 为了有效地降低相变随机存取存储器的RESET电流,从而有效且经济地提高相变随机存取存储器和使用相变随机存取存储器的电路的性能。 [0031] In order to effectively reduce the current RESET phase change random access memory, effectively and economically improve the performance of a phase change random access memory and a phase change random access memory circuit. 本发明提出了一种相变随机存取存储器的存储单元。 The present invention provides a phase change memory cell of a random access memory.

[0032] 图2A是根据本发明的一个实施方式的相变随机存取存储器的存储单元的剖视结构图,图2B是根据本发明的一个实施方式的相变随机存取存储器的存储单元的柱状同轴电极的立体结构图。 [0032] FIG. 2A is a phase change embodiment of the present invention is a cross-sectional structural view of a memory cell of a random access memory, and FIG. 2B is a phase change memory cells in random access memory according to one embodiment of the present invention. coaxially perspective structural view of the columnar electrodes. 如图2A和2B所示,本实施方式的相变随机存取存储器的存储单元可以包括: Phase change random access memory the memory cell shown in FIGS. 2A and 2B, the present embodiment may include:

[0033] 相变材料层201和柱状同轴电极202。 [0033] 201 and the phase change material layer 202 of the columnar electrode coaxially.

[0034] 相变材料层201与柱状同轴电极202连接,柱状同轴电极202包括位于柱状同轴电极202的轴线位置的第一电极202A、嵌套在第一电极202A之外并与第一电极202A同轴的第二电极202B和填充在第一电极202A和第二电极202B之间的第一绝缘层203。 [0034] The phase change material layer 201 202 coaxially connected to the cylindrical electrode, coaxial with the columnar electrode 202 includes a first electrode 202A positioned coaxially with the axis of the columnar position of the electrode 202, the first electrode nested in the outside of the first and 202A the second electrode 202B and the electrodes 202A coaxially filled between the first electrode and the second electrode 202B, 202A of the first insulating layer 203.

[0035] 相变材料层201与第一电极202A和第二电极202B的同一侧连接。 [0035] The phase change material layer 201 is connected to the same side of the first electrode and the second electrode 202B, 202A.

[0036] 具体地,相变材料层201与第一电极202A和第二电极202B的同一侧连接,可以保证在对存储单元进行读或写的操作时电流可以正常流过相变材料层201。 [0036] Specifically, phase change material layer 201 is connected to the first electrodes 202A and 202B of the same side of the second electrode can be ensured when the memory cell read or write operation can be normally current flows through the phase change material layer 201. 就结构方面来说,柱状同轴电极202的结构与同轴电缆的结构类似,电流由第一电极202A流入,流经相变材料层201至第二电极202B流出。 On structure, the columnar electrode structure similar to a coaxial structure of the coaxial cable 202, current flows from the first electrode 202A, flows through the phase change material layer 201 to the second electrode 202B flows. 此时,流经相变材料层201的电流以第一电极202A为中心呈放射状地流向第二电极202B。 At this time, the current flowing through the phase change material layer 201 to the first electrode 202A as the center radially towards the second electrode 202B. 相比将电极置于相变材料层两端的技术方案来说,本实施方式的存储单元在进行RESET操作时,电流流过的面积要大很多,并且不会发生电流分布不均匀的情况。 The comparison electrode is placed at both ends of the phase change material layer aspect, the storage unit of the present embodiment during RESET operation, the current flowing to an area much larger, and the case of uneven current distribution does not occur. 在总电流大小不变的前提下,可以有效地增加单位相变材料中所流过的电流。 Under the same premise the total magnitude of the current, effective to increase the current flowing through the material in a phase change unit. 同时,通过电流流经相变材料层201所产生的热效应,使相变材料层201中的相变材料由晶态转化为非晶态,由低阻变为高阻,从而实现相变随机存取存储器的存储单元的基于电阻的存储器功能。 Meanwhile, current flows through the phase change material layer 201, the thermal effect produced, the phase change material of the phase change material layer 201 into an amorphous state, a crystalline state of low resistance becomes high impedance, thereby realizing a phase change random access access memory storage unit based on the resistance memory function. 由于本实施方式的存储单元在进行RESET操作时,电流流过的面积较大且分布均匀,因此存储单元中的相变材料的受热也均匀,可以以较低的总电流使相变材料层中的相变材料由晶态转化为非晶态。 Since the area during RESET operation, current flows through the memory cell according to the present embodiment is large and evenly distributed, thus heating the phase change material memory cell is also uniform, phase change material layer may be a low total current a phase change material into the crystalline state to the amorphous state. 并且由于存储单元中的相变材料受热均匀,相变材料由晶态转化为非晶态的时间也会相应缩短,这样就可以相应减少存储单元进行RESET操作所需的时间。 And since the phase change material in the memory cell is heated uniformly, the phase change material from the amorphous to crystalline transition time will be shortened so that it can reduce the memory cell corresponding to the time required for the RESET operation. 需要说明的是,虽然本实施方式的附图中给出了圆柱状的柱状同轴电极202,但其并非是对本发明的限制。 Note that, although the figures given in the embodiment according to the present embodiment is a cylindrical coaxial cylindrical electrode 202, but not limiting of the present invention. 本领域技术人员应当知晓,随着正多边形的边数的增加,其越来越接近圆形,横截面为相应正多边形的柱体也就越来越接近圆柱体。 Those skilled in the art should be aware, as the number of sides of a regular polygon, which more nearly circular, regular polygonal cross-section for the respective cylinder it closer to the cylinder. 因此,横截面为正多边形的同轴电极也应纳入本发明的范围。 Thus, a cross section of a regular polygon coaxial electrode should be included in the scope of the present invention. 并且为了更好地说明本实施方式的技术方案,以第一电极202A为正极为例进行了说明。 And in order to better illustrate the technical solutions according to the present embodiment, the first electrode 202A is described as an example of the positive electrode. 但这种举例说明不能理解为对本发明的限制,以第二电极202B为正极,使电流由第二电极202B流向第一电极202A可以达到同样的技术效果。 But this illustration should not be construed as limiting the present invention, the second electrode 202B is a positive electrode, a current at the second electrode 202B toward the first electrode 202A can achieve the same technical effect.

[0037] 填充在第一电极202A和第二电极202B之间的第一绝缘层203可以有效地防止第一电极202A和第二电极202B之间短路,可以提高相变随机存取存储器和使用相变随机存取存储器的电路的稳定性。 [0037] 202A is filled between the first electrode and the second electrode 202B of the first insulating layer 203 can be effectively prevented and a short circuit between the second electrode 202B of the first electrode 202A can be increased, and a phase change random access memory using a phase Shear stability random access memory circuit.

[0038] 同时,本实施方式所提供的柱状同轴电极202可以方便用户连接相变存储器中各存储单元和由开关二极管和/或开关三极管构成的选通器件层。 [0038] Meanwhile, a coaxial cylindrical electrodes 202 in this embodiment may be provided in the user memory is connected to each memory cell and the gate layer is composed of a device switching diode and / or transistor switches a phase change. 并且与图1A所示的现有技术的存储单元相比,本实施方式的存储单元的第一电极202A和第二电极202B位于相变材料层201的同侧。 As compared with the prior art memory cell shown in FIG. 1A, the first electrode of memory cell 202A according to the present embodiment and the second electrode 202B is located in the same side of the phase change material layer 201. 这样就使存储单元和选通器件层的连接更加方便,可以降低电路的复杂程度,有利于提高相变随机存取存储器和使用相变随机存取存储器的电路的稳定性。 This memory cell and the gate layer is more convenient connection means, can reduce the complexity of the circuit, will help improve the stability of a phase change random access memory and a phase change random access memory circuit.

[0039] 优选地,基于相变材料的可熔特性,相变材料层201覆盖有用于保护相变材料层201的硬质绝缘氧化物外壳204,用以防止相变随机存取存储器的存储单元间和/或其他功能单元间的短路,该氧化物外壳可以由SiO2构成。 [0039] Preferably, the fusible characteristic based on phase change materials, phase change material layer 201 is covered with a protective insulating oxide hard phase change material layer 201 of the housing 204, a storage unit for preventing a phase change random access memory short circuit between inter and / or other functional units, the housing may be composed of the oxide of SiO2.

[0040] 优选地,相变材料层201可由本领域技术人员常用的Ge-Sb-Te相变材料、Ge-Sb-Te-O相变材料或S1-Sb-Te相变材料构成。 [0040] Preferably, the phase change material layer 201 by one skilled in the art conventional Ge-Sb-Te phase change material, Ge-Sb-Te-O or phase change material phase S1-Sb-Te material change. 柱状同轴电极202可由导电性良好的导体材料构成,例如氮化钛或钨。 Coaxial cylindrical conductive electrode 202 may be composed of a good conductor material, such as titanium nitride or tungsten. 第一绝缘层203可由本领域技术人员常用的SiN构成。 A first insulating layer 203 by one skilled in the art commonly of SiN. 需要说明的是,本发明的有益效果的实现并不依赖对相变材料层201,绝缘层203和柱状同轴电极202的材料的选择,在选择相同材料的情况下,采用如图2A所示的本实施方式的存储单元结构,存储单元的RESET电流的大小要明显小于如图1A所示的现有技术的存储单元的RESET电流大小,其RESET电流的大小与现有技术相比至少要降低一半。 Note that, to achieve advantageous effects of the present invention is not dependent on 201, phase change material layer selected insulating material layer 203 and the columnar electrode 202 is coaxially, in the case of selecting the same material, shown in Figure 2A using memory cell structure according to the present embodiment, the size of the memory cell is RESET current to be significantly less than the magnitude of the current memory cell RESET prior art shown in FIG. 1A, at least the size of the RESET current to decrease compared to prior art half.

[0041] 优选地,第二电极202B的外柱面有包裹第二电极202B的第二绝缘层205。 [0041] Preferably, the outer cylindrical surface of the second electrode 202B is wrapped with a second electrode of the second insulating layer 205 202B. 第二绝缘层205可由本领域技术人员常用的SiN构成。 The second insulating layer 205 may be used in this field of the art of SiN. 这样可以有效地使第二电极202B与其他存储单元或其他功能单元间绝缘,进一步提高相变随机存取存储器和使用相变随机存取存储器的电路的稳定性。 This effectively insulated from the second electrode 202B between the other storage unit or other functional units, to further improve the stability of a phase change random access memory and a phase change random access memory circuit.

[0042] 本实施方式可以有效地降低相变随机存取存储器的存储单元的RESET电流,从而减小相变随机存取存储器和使用相变随机存取存储器的电路的发热量和功耗。 [0042] The present embodiment can effectively reduce the current RESET phase change memory cell of a random access memory, thereby reducing a phase change random access memory and a phase change random access memory circuit of heat and power. 同时在制造本实施方式披露的相变随机存取存储器的存储单元的过程中,不需对相变材料和相变材料层的结构进行改进,可以有效且经济地提高相变随机存取存储器和使用相变随机存取存储器的电路的性能。 Procedure storage unit while the phase change random access memory according to the present embodiment for producing the disclosed embodiment, the configuration without the phase change material and phase change material layer is improved, it can be effectively and economically improve the phase-change random access memory and performance phase change random access memory circuit.

[0043] 本发明的一个优选实施方式在图2A和图2B所示的实施方式的基础上包括: [0043] comprising a base 2B embodiment shown a preferred embodiment of the present invention in FIGS. 2A and FIG on:

[0044] 相变材料层201的厚度为90nm至IlOnm,直径为90nm至120nm,第一电极202A的直径为25nm至35nm,第二电极202B的厚度为25nm至35nm,且第一绝缘层203厚度为25nm至35nm。 Thickness [0044] The phase change material layer 201 is 90nm to IlOnm, having a diameter of 90nm to 120nm, the diameter of the first electrode 202A is 25nm to 35nm, thickness of the second electrode 202B is 25nm to 35nm, and the thickness of the first insulating layer 203 of 25nm to 35nm.

[0045] 本优选实施方式是以现有相变随机存取存储器的存储单元的尺寸为基础提出的优选实施方式。 [0045] The preferred embodiment according to the present embodiment is a preferred embodiment of a memory cell size of the conventional phase-change random access memory based proposed. 需要说明的是,本优选实施方式仅是为了更形象地对本发明进行说明,其并不能理解为对本发明的限制。 Incidentally, the present embodiment is a preferable embodiment in order to more vividly be merely illustrative of the present invention, which is not to be interpreted as limiting the present invention. 本领域技术人员在本发明所披露的内容的基础上得出的其他尺寸的相变随机存取存储器的存储单元及相应的相变随机存取存储器也应纳入本发明的范围。 Other phase change size skilled in the art on the basis of the results disclosed in the present invention, the contents of random access memory and a memory cell corresponding phase change random access memory should also be included in the scope of the present invention.

[0046] 进一步优选地,相变材料层201的厚度为lOOnm,直径为105nm,第一电极202A的直径为30nm,第二电极202B的厚度为30nm,且第一绝缘层203厚度为30nm。 [0046] Further preferably, the phase change material layer 201 to a thickness of lOOnm, 105nm in diameter, the diameter of the first electrode 202A is 30 nm, a thickness of 30 nm as the second electrode 202B, and the first insulating layer 203 with a thickness of 30nm.

[0047] 图3是根据本发明的一个优选实施方式的相变随机存取存储器的存储单元进行RESET操作时的温度分布示意图。 [0047] FIG 3 is a temperature profile when a RESET operation of phase change memory cell according to a schematic view a preferred embodiment of the present invention, the random access memory. 如图3所示,存储单元选择的相变材料由晶态变为非晶态的温度为800K〜900K,当进行RESET操作时,相变材料层201中的A曲线处的温度为893K,B位置处的温度为1254K。 3, the memory cell selected by the phase change material in the crystalline state to amorphous state temperature 800K~900K, when the RESET operation, the temperature of the phase change material layer of curve A at 201 to 893K, B temperature at the location of 1254K. 此时,流经第一电极202A的电流大小为0.8mA,而当采用如图1A所示的现有技术的存储单元并选择相同的相变材料时,其RESET电流的大小在2mA左右。 In this case, current that flows through the first electrode 202A is a 0.8mA, and when using the prior art memory cell shown in FIG. 1A and select the same phase change material, which is about the size of the RESET current 2mA.

[0048] 本优选实施方式的相变随机存取存储器的存储单元的RESET电流相比现有技术的相变随机存取存储器的存储单元的RESET电流降低了一半以上。 RESET current memory cell of phase change random access memory RESET current memory cell [0048] The phase change of the preferred embodiment of the present random access memory as compared to the prior art of more than halved. 采用本优选实施方式所披露的相变随机存取存储器的存储单元,可以有效地降低相变随机存取存储器的存储单元的RESET电流。 The storage unit uses a phase change random access memory according to a preferred embodiment of the disclosed embodiment, can effectively reduce the current RESET phase change memory cell of a random access memory. 并且由于其不对相变材料和相变材料层的结构进行改进,因此还有成本低、经济实用的特点。 And since it does not phase change material and phase change material layer to improve the structure, so there are low cost, economical and practical features.

[0049] 图4是根据本发明的一个实施方式的相变随机存取存储器的结构示意图。 [0049] FIG. 4 is a schematic structural diagram of a random access memory according to a phase change embodiment of the present invention. 如图4所示,本实施方式的相变随机存取存储器可以包括: As shown in FIG 4, the present embodiment is a phase change random access memory may comprise:

[0050] 控制电路401、存储单元层402、选通器件层403和衬底404。 [0050] The control circuit 401, memory cell layer 402, the gate layer 403 and substrate 404 device.

[0051] 存储单元层402位于选通器件层403上方,并包含前几个实施方式中的存储单元。 [0051] The storage unit 402 is positioned above the gate layer, the device layer 403, and the previous embodiments comprising a memory cell.

[0052] 选通器件层403位于衬底404上,并包含选通器件,选通器件层403用于控制存储单元的选通。 [0052] The gating device layer 403 located on the substrate 404, and includes a gating device, the gating device layer 403 for controlling the memory cell gate.

[0053] 控制电路401与选通器件层403连接,通过选通器件控制存储单元的读写操作。 [0053] The control circuit 401 is connected to the gating device layer 403, through the gate control device read and write operations of memory cells.

[0054] 优选地,选通器件可以为开关二极管和/或开关三极管。 [0054] Preferably, the gating device may be a switching diode and / or transistor switches. 选通器件的功能是实现对存储单元的选通,在设计选通器件层403时,可以只选择开关二极管或开关三极管来作为选通器件,也可以令选通器件层403中的选通器件既有开关二极管,又有开关三极管。 Function gating device is achieved gating of memory cells, in the design of gating device layer 403 can select only the switching diode or switching transistor as the gating device, it can also make gating device layer 403 gating device existing switching diode, another switching transistor.

[0055] 本实施方式披露的相变随机存取存储器可通过以下方法制造:利用本领域技术人员所用的常规方法在衬底404上形成前端器件结构,前端器件结构可以包括源极、栅极和漏极。 [0055] The present embodiment discloses a phase change random access memory may be manufactured by the following method: using a conventional method to those skilled in the distal end for forming a device structure on a substrate 404, the front end of the device structure may include a source, a gate, and drain. 例如,利用沉积、刻蚀和化学机械抛光等工艺步骤在衬底上形成选通器件层403。 For example, gating device layer 403 using a deposition, etching and chemical mechanical polishing process step is formed on the substrate. 再利用沉积、刻蚀和化学机械抛光等工艺步骤在选通器件层403上形成存储单元层402,最后将分别与选通器件层403中的选通器件连接的字线和位线相应与控制电路401连接。 Recycling deposition, etching and chemical mechanical polishing process step of forming the memory cell layer 402 on the gating device layer 403, the last word line are connected to the gate of device 403 gating device layer and the bit line corresponding to the control circuit 401 is connected.

[0056] 本实施方式的相变随机存取存储器的RESET电流相比现有技术降低了一半以上。 [0056] The present embodiment is a phase change random access memory RESET current is decreased by more than half compared to the prior art. 采用本实施方式所披露的相变随机存取存储器,可以有效地降低相变随机存取存储器的RESET电流。 A phase change random access memory according to the present embodiment of the disclosed embodiment, can effectively reduce the current RESET phase change random access memory. 并且由于本实施方式不对相变材料和相变材料层的结构进行改进,因此还具有成本低、经济实用的特点。 Since the present embodiment and the embodiment does not phase change material and phase change material layer to improve the structure, it also has a low cost, economical and practical features.

[0057] 本发明的相变随机存取存储器的存储单元和相变随机存取存储器可以有效地降低相变随机存取存储器的存储单元的RESET电流,从而减小相变随机存取存储器和使用相变随机存取存储器的电路的发热量和功耗。 [0057] The memory cell of phase change random access memory according to the present invention and the phase-change random access memory can effectively reduce the current RESET phase change memory cell of a random access memory, thereby reducing a phase change random access memory and use phase change random access memory circuit of heat and power. 同时在制造本发明披露的相变随机存取存储器及其存储单元的过程中,不需对相变材料和相变材料层的结构进行改进,可以有效且经济地提高相变随机存取存储器和使用相变随机存取存储器的电路的性能。 While in the process memory and a phase change random access memory cells for producing the disclosure of the present invention, without the structure of the phase change material and phase change material layer is improved, it can be effectively and economically improve the phase-change random access memory and performance phase change random access memory circuit.

[0058] 根据本发明的相变随机存取存储器可用于例如用户电子产品,如个人计算机、便携式计算机、游戏机、蜂窝式电话、个人数字助理、摄像机、数码相机、手机等各种电子产品中,尤其是装有闪存随机存取存储器的电子产品中。 [0058] The phase change random access memory according to the present invention may be, for example, consumer electronic products, such as personal computers, portable computers, game machines, cellular phones, personal digital assistants, cameras, digital cameras, mobile phones and other electronic products , especially electronics flash with a random access memory.

[0059] 本发明已经通过上述实施方式进行了说明,但应当理解的是,上述实施方式只是用于举例和说明的目的,而非意在将本发明限制于所描述的实施方式范围内。 [0059] The present invention has been described in the above embodiments, it should be understood that the above embodiments are for purposes of example and illustration, and are not intended to limit the invention within the scope of the described embodiments. 此外本领域技术人员可以理解的是,本发明并不局限于上述实施方式,根据本发明的教导还可以做出更多种的变型和修改,这些变型和修改均落在本发明所要求保护的范围以内。 Moreover, those skilled in the art will be appreciated that the present invention is not limited to the above embodiment, in accordance with the teachings of the present invention may be made more of the variations and modifications, all such variations and modifications fall within the invention as claimed within the range. 本发明的保护范围由附属的权利要求书及其等效范围所界定。 The scope of the present invention is defined by the appended claims and their equivalent scope.

Claims (10)

1.一种相变随机存取存储器的存储单元,其特征在于,所述存储单元包括相变材料层和柱状同轴电极;所述柱状同轴电极包括位于所述柱状同轴电极的轴线位置的第一电极、嵌套在所述第一电极之外并与所述第一电极同轴的第二电极及填充在所述第一电极和所述第二电极之间的第一绝缘层,所述柱状同轴电极的横截面为正多边形或圆形;所述相变材料层与所述第一电极和所述第二电极的同一侧连接。 1. A phase change memory cell of a random access memory, wherein said memory cell comprises a phase change material layer and the columnar electrode coaxially; coaxially with the cylindrical electrode comprises a coaxial cylindrical electrode axial position a first electrode, the first electrode nested in the outside of and coaxially with said first electrode and a second electrode filled in the first insulating layer between the first electrode and the second electrode, the coaxial cylindrical electrodes of a regular polygon or a circular cross-section; said phase change material layer is connected to the same side of the first electrode and the second electrode.
2.根据权利要求1所述的存储单元,其特征在于,所述相变材料层覆盖有用于保护所述相变材料层的硬质绝缘氧化物外壳,所述氧化物外壳由SiO2构成。 2. The memory cell according to claim 1, wherein said phase change material layer is covered with an insulating oxide rigid housing for protecting the phase change material layer, the oxide shell composed of SiO2.
3.根据权利要求1所述的存储单元,其特征在于,所述第二电极的外柱面具有包裹所述第二电极的第二绝缘层。 3. The memory cell of claim 1, wherein an outer cylindrical surface of the second electrode having a second insulating layer encasing the second electrode.
4.根据权利要求1所述的存储单元,其特征在于,所述柱状同轴电极的材料是氮化钛或鹤。 4. The memory cell of claim 1, wherein said coaxial cylindrical electrode materials are titanium nitride or crane.
5.根据权利要求3所述的存储单元,其特征在于,所述第一绝缘层和所述第二绝缘层的材料是SiN。 The storage unit according to claim 3, characterized in that the material of the second insulating layer and the first insulating layer is SiN.
6.根据权利要求1所述的存储单元,其特征在于,所述相变材料层的材料是Ge-Sb-Te相变材料、Ge-Sb-Te-O相变材料或S1-Sb-Te相变材料。 6. The storage unit according to claim 1, characterized in that the material of the phase change material layer is a Ge-Sb-Te phase change material, Ge-Sb-Te-O or phase change material S1-Sb-Te the phase change material.
7.根据权利要求1至6中任一项权利要求所述的存储单元,其特征在于,所述相变材料层的厚度为90nm至I IOnm,直径为90nm至120nm,所述第一电极的直径为25nm至35nm,且所述第二电极的厚度为25nm至35nm。 The memory cell 1 to 6 according to any one of claims claim, wherein the thickness of the phase change material layer is 90nm to I IOnm, 90nm to 120 nm in diameter, the first electrode having a diameter of 25nm to 35nm, and the thickness of the second electrode is 25nm to 35nm.
8.根据权利要求1所述的存储单元,其特征在于,所述第一绝缘层的厚度为25nm至35nm。 8. The memory cell of claim 1, wherein the thickness of the first insulating layer is 25nm to 35nm.
9.一种相变随机存取存储器,其特征在于,所述存储器包括:控制电路、存储单元层、选通器件层和衬底; 所述存储单元层位于所述选通器件层上方,并包含权利要求1-8中任一项所述的存储单元; 所述选通器件层位于所述衬底上,并包含选通器件,所述选通器件层用于控制所述存储单元的选通, 所述控制电路与所述选通器件层连接,并通过所述选通器件控制所述存储单元的读写操作。 A phase-change random access memory, wherein said memory comprises: a control circuit, memory cell layer, gating device layer and the substrate; the memory cell layer located above a device layer on the gate, and comprising a storage unit as claimed in claim any one of claims 1-8; the gating device positioned on the substrate layer, and comprising a gating device, the gating device layer for controlling the memory cell selected from through the control circuit is connected to the gating device layer, and said gating device controlled by read and write operations of the memory cell.
10.根据权利要求9所述的相变随机存取存储器,其特征在于,所述选通器件为开关二极管和/或开关三极管。 10. The phase change according to claim 9, said random access memory, wherein said gating device is a switching diode and / or transistor switches.
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