CN102447042A - Led封装结构及制程 - Google Patents

Led封装结构及制程 Download PDF

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CN102447042A
CN102447042A CN2010105100864A CN201010510086A CN102447042A CN 102447042 A CN102447042 A CN 102447042A CN 2010105100864 A CN2010105100864 A CN 2010105100864A CN 201010510086 A CN201010510086 A CN 201010510086A CN 102447042 A CN102447042 A CN 102447042A
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substrate
lens
led
encapsulating structure
led chip
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詹勋伟
柯志勋
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
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    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements

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Abstract

本发明提供一种LED封装结构及制程,包括一个基板以及一个透镜。所述基板具有至少两个电极以及一个LED芯片。所述电极与所述LED芯片间具有至少一个电连接线用以电性连接。所述电连接线与所述电极的接合处具有至少一个包覆层。所述透镜设置于所述基板上,并覆盖所述包覆层。所述基板在所述透镜覆盖的区域内具有至少两个贯穿孔洞。所述透镜与所述基板之间形成一个容置空间,所述容置空间通过所述孔洞注入流体材料,所述流体材料固化后形成一个介质层。本发明并提供制造所述LED封装结构的制程。

Description

LED封装结构及制程
技术领域
本发明涉及一种LED封装结构及制程,尤其涉及一种具有较佳介质层的LED封装结构及制程。
背景技术
LED产业是近几年最受瞩目的产业之一,发展至今,LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点。然而通常LED高功率产品为获得所需要的亮度与颜色,必须采用不同颜色的荧光粉来作混合搭配,将这些不同颜色的荧光粉混入LED的封装胶内,由LED光线的照射激发产生所需要的亮度与颜色。但为设置这混入荧光粉的封装胶或是再增设一个透镜,通常需要多道的模具加工才能完成,导致制程复杂且花费昂贵。同时在这复杂加工的制程中压模的作用力或是外力,常会使LED组件中用于电连接的金线与电极脱落,造成LED产品无法运作。此外,由于模制荧光粉层的制程中,封装胶内部不同颜色的荧光粉颗粒容易游离混杂在一块,其不均匀的荧光粉因为不同的波长混杂将会交互干扰影响,使荧光粉的激发效果降低。
发明内容
有鉴于此,有必要提供一种结构稳定、介质层制造简易、发光效果良好的LED封装结构及制程。
一种LED封装结构,包括一个基板以及一个透镜。所述基板具有至少两个电极以及一个LED芯片。所述电极与所述LED芯片间具有至少一个电连接线用以电性连接。所述电连接线与所述电极的接合处具有至少一个包覆层。所述透镜设置于所述基板上,并覆盖所述包覆层。所述基板在所述透镜覆盖的区域内具有至少两个贯穿孔洞。所述透镜与所述基板之间形成一个容置空间,所述容置空间通过所述孔洞注入流体材料,所述流体材料固化后形成一个介质层。
一种LED封装制程,其包括以下的步骤,
提供一个基板,使所述基板具有至少两个电极以及一个LED芯片;
提供至少一个电连接线,使所述电极与所述LED芯片电性连接;
提供至少一个包覆层,设置于所述电连接线与所述电极接合处;
基板上形成至少两个贯穿孔洞;
提供一个透镜,设置于所述基板上,并覆盖所述包覆层;
注入流体材料,由所述孔洞使所述流体材料填充于所述基板与所述透镜之间;
固化所述流体材料。
在上述的LED封装结构及制程中,由于所述包覆层使所述LED芯片电性连接结构稳固,并在所述基板与透镜之间的空间直接透过所述基板上的贯穿孔洞注入介质层材料,简化所述介质层的成型制程使制造成本降低。
附图说明
图1是本发明LED封装结构及制程第一实施方式的步骤流程图。
图2是图1步骤流程图对应的LED封装结构示意图。
图3是本发明LED封装结构及制程第二实施方式的步骤流程图。
图4是图3步骤流程图对应的LED封装结构分解示意图。
主要元件符号说明
基板                                110、210
顶面                                1102、2102
底面                                1104、2104
电极                                112、212
LED芯片                             114、214
电连接线                            120、220
包覆层                              130、230
孔洞                                140、240
透镜                                150、250
凹槽                                1502、2502
流体材料                            160、260
具体实施方式
下面将结合附图对本发明作一具体介绍。
请参阅图1及图2,所示为本发明LED封装结构及制程的第一实施方式结构及制程步骤流程图,请先参阅图2的LED封装结构,包括一个基板110以及一个透镜150。所述基板110包含有一个顶面1102以及一个底面1104。所述顶面1102具有至少两个电极112以及一个LED芯片114,其中所述电极112可自所述顶面1102延伸至所述底面1104。所述电极112与所述LED芯片114间具有至少一个电连接线120。所述电连接线120一端连接所述LED芯片114,另一端连接所述电极112,使所述电极112与所述LED芯片114电性连接。所述电连接线120的材料是高导电性的金线。所述电连接线120与所述电极112的接合处具有至少一个包覆层130。所述包覆层130可以稳固所述电连接线120与所述电极112的接合,维护所述电极112与所述LED芯片114之间的电性连接。所述包覆层130于所述电极112上的高度以不阻挡所述LED芯片114的出光角度为原则。所述LED芯片114的出光角度在一百一十度至一百五十度之间。
所述透镜150设置于所述基板110上,并覆盖所述包覆层130。所述透镜150内缘可紧邻所述包覆层130或是具有一个距离,所述透镜150底缘与所述基板110顶面1102接合处具有接着剂(图中未标示),使所述透镜150固定于所述基板110上。所述透镜150内的所述基板110上具有至少两个贯穿孔洞140。所述孔洞140自所述基板110的所述顶面1102贯穿至所述底面1104。所述透镜150具有一个凹槽1502,所述凹槽1502位于所述透镜150的底部。所述透镜150设置于所述基板110上时,所述凹槽1502在所述基板110与所述透镜150之间形成一个容置空间,所述凹槽1502形成的容置空间内包含所述基板110上的所述贯穿孔洞140。所述贯穿孔洞140注入流体材料160,使所述流体材料160填充于所述基板110与所述透镜150之间所述凹槽1502形成的容置空间。所述流体材料160可以是透明的胶体或是具有荧光粉的混合物。所述流体材料160固化后即在所述基板110与所述透镜150之间形成一个介质层。所述流体材料160以具有荧光粉的混合物注入所述凹槽1502形成的容置空间,固化后即在所述基板110与所述透镜150之间形成一个荧光粉层。
本实施方式LED封装制程,其包括以下的步骤:
S11提供一个基板,使所述基板具有至少两个电极以及一个LED芯片;
S12提供至少一个电连接线,使所述电极与所述LED芯片电性连接;
S13提供至少一个包覆层,设置于所述电连接线与所述电极接合处;
S14基板上形成至少两个贯穿孔洞;
S15提供一个透镜,设置于所述基板上,并覆盖所述包覆层;
S16注入流体材料,由所述孔洞使所述流体材料填充于所述基板与所述透镜之间;
S17固化所述流体材料。
请再参阅图3,本发明LED封装结构及制程第二实施方式的步骤流程图,其包括以下的步骤:
S21提供一个基板,使所述基板具有至少两个电极以及一个LED芯片;
S22提供至少一个电连接线,使所述电极与所述LED芯片电性连接;
S23提供至少一个包覆层,设置于所述电连接线与所述电极接合处;
S24基板上形成至少两个贯穿孔洞;
以上步骤S21至S24相同于第一实施方式的步骤S11至S14,不同在于以下的步骤:
S25提供一个底面向上的透镜,所述透镜的底面具有凹槽;
S26注入流体材料于所述透镜凹槽内;
S27结合所述基板与所述透镜,使所述基板上LED芯片及包覆层对应位于所述透镜凹槽内;
S28固化所述流体材料。
请再参阅图4的LED封装结构,包括一个基板210以及一个透镜250。所述基板210,相同于第一实施方式的基板110。例如,所述基板210包含有一个顶面2102以及一个底面2104。所述基板210的顶面2102具有至少两个电极212以及一个LED芯片214至少一个电连接线。所述电极212与所述LED芯片214间具有至少一个电连接线220。所述电连接线220一端连接所述LED芯片214,另一端连接所述电极212,使所述电极212与所述LED芯片214电性连接。所述电连接线220与所述电极212的接合处具有至少一个包覆层230。所述包覆层230在所述电连接线220与所述电极212的接合处设置。所述基板210上形成至少两个贯穿孔洞240,所述孔洞240自所述基板210的所述顶面2102贯穿至所述底面2104等。
所述透镜250的底面向上,所述底面具有一个凹槽2502。所述凹槽2502注入流体材料260,使所述流体材料260填充于所述凹槽2502内。所述流体材料260可以是透明的胶体或是具有荧光粉的混合物。所述基板210与所述透镜250结合,使所述基板210顶面2102上的LED芯片214及包覆层230对应位于所述透镜凹槽2502内。所述基板210与所述透镜250接合处具有接着剂(图中未标示),使所述基板210固定于所述透镜250上。所述透镜凹槽2502内注入的流体材料260多余或是不足,通过所述基板210的两个贯穿孔洞240移除或是填补,使所述流体材料260填满所述透镜凹槽2502内。所述流体材料260固化后即在所述基板210与所述透镜250之间形成一个介质层。所述流体材料160为具有荧光粉的混合物,使所述基板210与所述透镜250之间形成一个荧光粉层。
综上,本发明LED封装结构及制程,对于所述透镜150、250与所述基板110、210之间介质层的形成,以直接注入的方式制作,可防止因模具制作对结构以及介质层造成的不良缺失,如结构不稳固、发光效率不佳等,能有效改善目前LED封装结构上的问题。
另外,本领域技术人员还可在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (11)

1.一种LED封装结构,包括一个基板以及一个透镜,所述基板具有至少两个电极以及一个LED芯片,所述电极与所述LED芯片间具有至少一个电连接线用以电性连接,其特征在于:所述电连接线与所述电极的接合处具有至少一个包覆层,所述透镜设置于所述基板上,并覆盖所述包覆层,所述基板在所述透镜覆盖的区域内具有至少两个贯穿孔洞,所述透镜与所述基板之间形成一个容置空间,所述容置空间通过所述孔洞注入流体材料,所述流体材料固化后形成一个介质层。
2.如权利要求1所述的LED封装结构,其特征在于:所述基板包含有一个顶面以及一个底面,所述顶面设置至少两个电极以及一个LED芯片,其中所述电极可自所述顶面延伸至所述底面。
3.如权利要求1所述的LED封装结构,其特征在于:所述包覆层于所述电极上的高度不阻挡所述LED芯片的出光角度。
4.如权利要求3所述的LED封装结构,其特征在于:所述LED芯片的出光角度在一百一十度至一百五十度之间。
5.如权利要求1所述的LED封装结构,其特征在于:所述透镜具有一个凹槽,所述凹槽位于所述透镜的底部。
6.如权利要求1所述的LED封装结构,其特征在于:所述流体材料是透明的胶体或是具有荧光粉的混合物,所述流体材料填满所述透镜凹槽内。
7.如权利要求1所述的LED封装结构,其特征在于:所述基板与所述透镜接合处具有接着剂。
8.如权利要求1所述的LED封装结构,其特征在于:所述介质层是一个荧光粉层。
9.一种LED封装制程,其包括以下的步骤:
a)提供一个基板,使所述基板具有至少两个电极以及一个LED芯片;
b)提供至少一个电连接线,使所述电极与所述LED芯片电性连接
c)提供至少一个包覆层,设置于所述电连接线与所述电极接合处;及
d)基板上形成至少两个贯穿孔洞。
10.如权利要求9所述的LED封装制程,其特征在于:步骤d)之后进一步包括以下的步骤:
e)提供一个透镜,设置于所述基板上,并覆盖所述包覆层;
f)注入流体材料,由所述孔洞使所述流体材料填充于所述基板与所述透镜之间;及
g)固化所述流体材料。
11.如权利要求9所述的LED封装制程,其特征在于:步骤d)之后进一步包括以下列的步骤:
1)提供一个底面向上的透镜,所述透镜的底面具有凹槽;
2)注入流体材料于所述透镜凹槽内;
3)结合所述基板与所述透镜,使所述基板上LED芯片及包覆层对应位于所述透镜凹槽内;及
4)固化所述流体材料层。
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