CN102446810B - Method for forming shallow trench isolation - Google Patents
Method for forming shallow trench isolation Download PDFInfo
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- CN102446810B CN102446810B CN2011103411168A CN201110341116A CN102446810B CN 102446810 B CN102446810 B CN 102446810B CN 2011103411168 A CN2011103411168 A CN 2011103411168A CN 201110341116 A CN201110341116 A CN 201110341116A CN 102446810 B CN102446810 B CN 102446810B
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Abstract
The invention provides a method for forming shallow trench isolation. The method comprises the steps of: effectively filling dense trenches and loose trenches in original components by steps, and enabling a sputtering and deposition ratio when filling the dense trenches to be more than the sputtering and deposition ration when filling the loose trenches. Through the method for forming the shallow trench isolation, a high density plasma chemical vapor deposition technology is effectively enlarged; and beneficial effects of filling the trenches without empty holes and no damage to the plasma are achieved.
Description
Technical field
The present invention relates to a kind of process, relate in particular to a kind of form shallow trench isolation from method.
Background technology
Along with dwindling gradually of IC semiconductor critical size, in semiconductor integrated circuit the isolation technology of device and device also by original silicon carrying out local oxide isolation develop into shallow trench isolation from.
Typically fleet plough groove isolation structure comprises the groove that is formed at substrate and is filled in the dielectric in groove, and wherein dielectric is generally silica.
Due to high-density plasma (High Density Plasma, be called for short HDP) chemical vapour deposition (CVD) (Chemical Vapor Deposition, be called for short CVD,) method has sputter (Sputtering, be called for short S) and deposit (Deposition, abbreviation D) two functions, therefore, when carrying out deposit, also can carry out deposit is peeled off.
By adjusting the ratio of sputter and deposit, can control the filling capacity of this processing procedure.There is its filling capacity of high density plasma CVD processing procedure that higher sputter and deposit set stronger, but pair risk of silicon active area plasma damage is but arranged, especially for the silicon active area of relative isolation; Although it is little to the plasma damage of silicon active area to have the high density plasma CVD processing procedure of setting than low sputter and deposit, yet can not well meet the requirement of filling, easily in groove, formation is empty.
Yet in actual semiconductor production process, along with reducing gradually of semiconductor critical size, shallow trench isolation from depth-to-width ratio (Aspect Ratio, AR) also increase gradually, to the filling capacity of high density plasma CVD, require also more and more higher.Therefore, the chemical vapor deposition process that people have to set by higher sputter and deposit ratio is filled, yet, consider the risk to silicon active area plasma damage, the ratio setting of have to again strictly control sputter and deposit.
Arrived below the 65nm technology node, high-density plasma chemical vapor phase deposition processing procedure has not almost had any process window to meet the requirement of the intimate harshness of filling and damaging without silicon without cavity.
Summary of the invention
Disclosure of the invention a kind of form shallow trench isolation from method.But can not well meet the requirement of filling in order to solve in prior art when being filled, easily in groove, form empty problem.
For achieving the above object, the technical scheme that invention adopts is:
A kind of form shallow trench isolation from method, comprise: at first lay one deck silicon base, deposit pad silicon oxide layer on described silicon base, upper surface deposit pad silicon nitride layer at described pad silicon oxide layer, form the processed former device of wanting, wherein, also comprise: described former device is carried out to the filling of intensive groove and loose groove, it fills intensive groove and loose groove divides two processing steps to complete, and its work step is as follows:
The upper surface that the first work step is included in former device is covered one deck photoresistance, and in the zone that will fill intensive groove, former device is carried out to the etching of intensive groove, make the intensive groove of institute's etching through pad silicon nitride layer and pad silicon oxide layer, form intensive groove in silicon base, again finished photoresistance on described pad silicon nitride layer is removed fully, deposit one deck silica on described pad silicon nitride layer afterwards, and use silica to fill fully the space in intensive groove, then the silica that will be positioned at more than the pad silicon nitride layer is removed fully;
Carry out afterwards second work step, at first carry out the new photoresistance of deposit one deck on the pad silicon nitride layer before, and in the zone that will fill loose groove, to the loosen etching of groove of former device, make the loose groove of institute's etching through pad silicon nitride layer and pad silicon oxide layer, and form loose groove in silicon base, afterwards at described pad silicon nitride layer deposit one deck silica, and silica is filled fully to the space in loose groove, then the silica that will be positioned at more than the pad silicon nitride layer is removed fully;
Above-mentioned process, the ratio of sputter when while wherein, carrying out in described first work step that fill fully in the space in intensive groove to silicon oxide deposition, the ratio of sputter is greater than in described second work step and carries out that fill fully in the space in loose groove to silicon oxide deposition.
Above-mentioned process, wherein, described deposit is chemical vapor deposition method.
Above-mentioned process, wherein, the mode that described silica is removed is fully removed for grinding.
In the present invention a kind of form shallow trench isolation from method, adopted as above scheme to there is following effect:
1, effectively by the substep to intensive groove and loose groove in former device, fill, and make the sputter when filling intensive groove be greater than sputter and the deposit ratio when groove is loosened in filling with the ratio of deposit;
2, enlarged the technique of high density plasma CVD simultaneously, reached and fill the beneficial effect with the plasma damage free wound without cavity.
The accompanying drawing explanation
By reading the detailed description of non-limiting example being done with reference to following accompanying drawing, the further feature of invention, it is more obvious that purpose and advantage will become.
Fig. 1-9 be depicted as the present invention a kind of form shallow trench isolation from the processing step schematic diagram of method.
As the figure sequence number: the zone 10 of silicon base 1, silicon oxide layer 2, silicon nitride layer 3, intensive groove 4, loose groove 5, photoresistance 6, silica 7, intensive groove, the zone 11 of loose groove.
Embodiment
For technological means that invention is realized, create feature, reach purpose and effect is easy to understand, lower combination specifically illustrates, and further sets forth the present invention.
Please refer to shown in 1-9 figure, a kind of form shallow trench isolation from method, comprise: at first lay one deck silicon base 1, deposit pad silicon oxide layer 2 on silicon base 1, at the upper surface deposit pad silicon nitride layer 3 of pad silicon oxide layer 2, form the processed former device of wanting, wherein, also comprise: former device is carried out to the filling of intensive groove 4 and loose groove 5, it is filled intensive groove 4 and completes with 5 minutes two processing steps of loose groove, and its work step is as follows:
The upper surface that the first work step is included in former device is covered one deck photoresistance 6, and the zone 10 that will fill intensive groove, former device is carried out to the etching of intensive groove 4, make the intensive groove 4 of institute's etching through pad silicon nitride layer 3 and pad silicon oxide layer 2, form intensive groove 4 in silicon base 1, to pad finished photoresistance 6 on silicon nitride layer 3 removes fully again, padding deposit one deck silica 7 on silicon nitride layer 3 afterwards, and use the space in 7 pairs of intensive grooves 4 of silica to fill fully, then will be positioned at the silica 7 of pad silicon nitride layer more than 3 and remove fully;
Carry out afterwards second work step, at first carry out the new photoresistance 6 of deposit one deck on pad silicon nitride layer 3 before, and in the zone 11 that will fill loose groove, to the loosen etching of groove 5 of former device, make the loose groove 5 of institute's etching through pad silicon nitride layer 3 and pad silicon oxide layer 2, and form loose groove 5 in silicon base 1, pad again afterwards silicon nitride layer 3 deposit one deck silica 7, and the space in 7 pairs of loose grooves 5 of silica is filled fully, then will be positioned at the pad silica 7 of silicon nitride layer more than 3 and remove fully;
While further, carrying out in first work step that fill fully in the space in intensive groove 4 to silicon oxide deposition 7, the ratio of sputter is greater than in second work step the ratio of sputter while carrying out to silica 7 is deposited on space in loose groove 5 and fills fully.
Further, described deposit is chemical vapor deposition method.
Further, the mode that described silica is removed is fully removed for grinding.In sum, invent a kind of form shallow trench isolation from method, effectively by the substep to intensive groove and loose groove in former device, fill, and the ratio that makes sputter when filling intensive groove and deposit is greater than in sputter and the deposit ratio of filling while loosening groove, enlarged the technique of high density plasma CVD simultaneously, reached and fill the beneficial effect with the plasma damage free wound without cavity.
The above specific embodiment to invention is described.It will be appreciated that, invention is not limited to above-mentioned specific implementations, and the equipment of wherein not describing in detail to the greatest extent and structure are construed as with the common mode in this area to be implemented; Those skilled in the art can make various distortion or modification within the scope of the claims, and this does not affect the essence of an invention content.
Claims (3)
- One kind form shallow trench isolation from method, comprise: at first lay one deck silicon base, deposit pad silicon oxide layer on described silicon base, upper surface deposit pad silicon nitride layer at described pad silicon oxide layer, form the processed former device of wanting, it is characterized in that, also comprise: described former device is carried out to the filling of intensive groove and loose groove, it fills intensive groove and loose groove divides two processing steps to complete, and its work step is as follows:The upper surface that the first work step is included in former device is covered one deck photoresistance, and in the zone that will fill intensive groove, former device is carried out to the etching of intensive groove, make the intensive groove of institute's etching through pad silicon nitride layer and pad silicon oxide layer, form intensive groove in silicon base, again finished photoresistance on described pad silicon nitride layer is removed fully, deposit one deck silica on described pad silicon nitride layer afterwards, and use silica to fill fully the space in intensive groove, then the silica that will be positioned at more than the pad silicon nitride layer is removed fully;Carry out afterwards second work step, at first carry out the new photoresistance of deposit one deck on the pad silicon nitride layer before, and in the zone that will fill loose groove, to the loosen etching of groove of former device, make the loose groove of institute's etching through pad silicon nitride layer and pad silicon oxide layer, and form loose groove in silicon base, afterwards at described pad silicon nitride layer deposit one deck silica, and silica is filled fully to the space in loose groove, then the silica that will be positioned at more than the pad silicon nitride layer is removed fully;Carry out the ratio of sputter when fill fully in the space in intensive groove to silicon oxide deposition and be greater than in described second work step the ratio of sputter while carrying out that fill fully in the space in loose groove to silicon oxide deposition in described first work step.
- 2. process according to claim 1, is characterized in that, described deposit is chemical vapor deposition method.
- 3. process according to claim 1, is characterized in that, the mode that described silica is removed is fully removed for grinding.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011103411168A CN102446810B (en) | 2011-11-02 | 2011-11-02 | Method for forming shallow trench isolation |
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| CN2011103411168A CN102446810B (en) | 2011-11-02 | 2011-11-02 | Method for forming shallow trench isolation |
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| CN102446810A CN102446810A (en) | 2012-05-09 |
| CN102446810B true CN102446810B (en) | 2013-12-04 |
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| US6653203B1 (en) * | 2002-05-23 | 2003-11-25 | Taiwan Semiconductor Manufacturing Company | Thin sidewall multi-step HDP deposition method to achieve completely filled high aspect ratio trenches |
| JP2008103645A (en) * | 2006-10-20 | 2008-05-01 | Toshiba Corp | Production method of semiconductor device |
| KR100878015B1 (en) * | 2007-01-31 | 2009-01-13 | 삼성전자주식회사 | Method for removing of oxides and method for filling a trench using the same |
| JP2010283256A (en) * | 2009-06-08 | 2010-12-16 | Toshiba Corp | Method of manufacturing semiconductor device and nand type flash memory |
| US8610240B2 (en) * | 2009-10-16 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit with multi recessed shallow trench isolation |
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