CN102433553A - Coating device - Google Patents

Coating device Download PDF

Info

Publication number
CN102433553A
CN102433553A CN2010102966085A CN201010296608A CN102433553A CN 102433553 A CN102433553 A CN 102433553A CN 2010102966085 A CN2010102966085 A CN 2010102966085A CN 201010296608 A CN201010296608 A CN 201010296608A CN 102433553 A CN102433553 A CN 102433553A
Authority
CN
China
Prior art keywords
chamber
shell
wait
reaction chamber
film coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010102966085A
Other languages
Chinese (zh)
Inventor
裴绍凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN2010102966085A priority Critical patent/CN102433553A/en
Publication of CN102433553A publication Critical patent/CN102433553A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention provides a coating device, which comprises a forming device, a middle device, a processing device, a first switching device, a second switching device and a control device, wherein the forming device is provided with a reaction cavity; the middle device is connected to the forming device, and is provided with a waiting cavity which is communicated with the reaction cavity; the processing device is connected to the middle device, and is provided with a processing cavity which is connected to the waiting cavity; the first switching device is used for controlling the communication and isolation of the reaction cavity and the waiting cavity; the second switching device is used for controlling the communication and isolation of the waiting cavity and the processing cavity; and the control device is used for controlling the actions of the first and the second switching devices. A precursor can fully react in the reaction cavity, and the reacted precursor can be prepared to appropriate concentration after entering the waiting cavity, and enters the processing cavity lastly form depositing into a needed film layer on a substrate. The entire coating process can be controlled accurately, so that the thickness of the coated layer is uniform.

Description

Film coating apparatus
Technical field
The present invention relates to the coating technique field, relate in particular to a kind of film coating apparatus.
Background technology
Traditional chemical vapour deposition film coating apparatus generally include one be formed with the body of an airtight plated film cavity and be contained in the intravital support that is used to carry substrate to be coated in this plated film chamber, at least one is positioned at the crucible that the support below is used to carry precursor, a gas source that is used to bombard the electron source and a release reaction property gas of precursor.During plated film, electron source emitting electrons bombardment precursor reacted with reactant gas in the process of substrate motion by the precursor molecules after bombarding, and final accumulation forms required rete on substrate.Yet; In the actual production; In an only plated film cavity, be difficult to control the concentration of precursor molecules and reactant gas and reaction times between the two exactly, cause institute's coatings to contain not the fully precursor of reaction easily, thereby reduce the plated film quality.
Summary of the invention
In view of this, be necessary to provide a kind of film coating apparatus that improves the plated film quality.
A kind of film coating apparatus comprises that one forms device, a middle device, a processing apparatus, first switching arrangement, a second switch device and a gear.This formation device has a reaction chamber.This middle device is connected to this formation device and has a wait chamber that is communicated with this reaction chamber.This processing apparatus is connected to this middle device and has a processing procedure chamber that is connected to this wait chamber.This first switching arrangement is used to control this reaction chamber and is communicated with this wait chamber with isolated.This second switch device is used for this wait chamber of control and is communicated with this processing procedure chamber with isolated.This gear is used to control the start of first and second switching arrangement.
Compared with prior art, precursor can fully react in reaction chamber in the film coating apparatus of the present invention, and reacted precursor can be deployed into proper concn after getting into and waiting for the chamber therein, just get into the processing procedure chamber at last and on substrate accumulation become required rete.So, the time of whole coating process raw material reaction and concentration all can be made that the purity of institute's coatings is high, and then improve the plated film quality by control exactly.
Description of drawings
Fig. 1 is the floor map of the film coating apparatus of preferred embodiments of the present invention.
The main element nomenclature
Film coating apparatus 10
Form device 100
First shell 102
Inject hole 102a
The first discharge hole 102b
The first air inlet port 102c
Crucible 104
Electron emission unit 106
Heating unit 108
Reaction chamber 110
Middle device 200
Second shell 202
The first feed port 202a
The second discharge hole 202b
The second air inlet port 202c
Wait for chamber 204
Processing apparatus 300
The 3rd shell 302
The second feed port 302a
Axis hole 302b
Drive unit 304
Drive source 304a
Rotating shaft 304b
Support 306
Processing procedure chamber 308
First switching arrangement 400
Driving mechanism 402
Driving member 404
Dividing plate 406
Second switch device 500
Cylinder 502
Valve 504
Gear 600
Unit 602
First sensor 604
Second sensor 606
Second forms device 100 '
Second middle device 200 '
The 3rd switching arrangement 400 '
The 4th switching arrangement 500 '
Embodiment
Please refer to Fig. 1, the film coating apparatus 10 of preferred embodiments of the present invention comprises that one forms 300, one first switching arrangements 400 of 200, one processing apparatus of 100, one middle devices of device and a second switch device 500.
Form device 100 and have a reaction chamber 110.Particularly, form device 100 and comprise 102, one crucibles of one first shell 104, an electron emission unit 106 and a heating unit 108.First shell 102 offers one and injects hole 102a, first a discharge hole 102b and first an air inlet port 102c who is used to be connected to a reactive gas source (scheming not show), and first shell 102 forms reaction chambers 110.Electron emission unit 106 is arranged on outside first shell 102, is used to launch high-power electron beam, and institute's ejected electron bundle gets into reaction chamber 110 through injecting hole 102a.Electron emission unit 106 is arranged on outside the reaction chamber 110, avoids electron emission unit 106 itself not receive the bombardment of high-power electron beam, helps prolonging the work-ing life of electron emission unit 106.Crucible 104 is arranged in the reaction chamber 110, is used to carry precursor (figure does not show).Be provided with magnet (figure does not show) in the crucible 104, be used to attract the beam bombardment precursor.Heating unit 108 is wrapped in first shell, 102 peripheries, is used to heat first shell 102, to quicken the reaction of precursor and reactant gas.In this embodiment; Injecting the hole 102a and the first discharge hole 102b lays respectively on about 102 two sidewalls of first shell (figure is mark not); The first air inlet port 102c is positioned on the upper side wall (figure is mark not) of first shell 102, and crucible 104 is arranged on the lower wall (figure is mark not) of first shell 102.Electron emission unit 106 is an electron beam gun.
Middle device 200 is connected with formation device 100, and has a wait chamber 204 that is communicated with reaction chamber 110.Particularly, middle device 200 comprises one second shell 202.Second shell 202 offers first a feed port 202a who is communicated with reaction chamber 110, second a discharge hole 202b and second an air inlet port 202c who is used to be connected to a current-carrying gas source (scheming not show), and second shell 202 forms waits for chambeies 204.The first feed port 202a docks with the first discharge hole 102b that forms device 100, thereby makes reaction chamber 110 and wait chamber 204 be interconnected.In this embodiment, the second discharge hole 202b and the second air inlet port 202c lay respectively at second shell about in the of 202 on two sidewalls (figure is mark), and the first feed port 202a is positioned on second shell, 202 left side walls (figure is mark).The first feed port 202a and the first discharge hole 102b equal and opposite in direction.Middle device 200 can be through rolling with formation device 100, and modes such as screw connection realize connecting, and perhaps also can be one-body molded.In this embodiment, middle device 200 is to be connected through screw with forming device 100.
Processing apparatus 300 is connected with middle device 200, and has a processing procedure chamber 308 that is connected to wait chamber 204.Particularly, processing apparatus 300 comprises one the 3rd shell 302, a drive unit 304 and a support 306.The 3rd shell 302 offers one and is communicated to the second feed port 302a and axis hole 302b who waits for chamber 204, and the 3rd shell 302 forms processing procedure chamber 308.The second feed port 302a docks with the second discharge hole 202b of middle device 200, thereby makes processing procedure chamber 308 and wait chamber 204 be interconnected.Drive unit 304 comprises a drive source 304a and a rotating shaft 304b who is connected to drive source 304a, and rotating shaft 304b is by drive source 304a driven in rotation.Drive source 304a is arranged on outside the 3rd shell 302, and the 304b of rotating shaft simultaneously passes axis hole 302b and gets into processing procedure chamber 308.Support 306 is used to carry substrate to be coated (figure do not show), and support 306 is fixed to rotating shaft 304b, thereby can be by its driven in rotation.In this embodiment, drive source 304a is a motor.The second feed port 302a and the second discharge hole 202b equal and opposite in direction.The second feed port 302a and axis hole 302b lay respectively on the top and bottom sidewall (figure is mark not) of the 3rd shell 302.
First switching arrangement 400 is used to control reaction chamber 110 and is communicated with isolated with waiting for chamber 204.Particularly, first switching arrangement 400 comprises 402, one driving members 404 of a driving mechanism and a dividing plate 406.The right side wall (figure mark) that driving mechanism 402 is arranged on second shell 202 is gone up and is arranged in and waits for chamber 204.Driving member 404 1 ends are connected to driving mechanism 402, and the other end is free end and can be changed and keep self length by the driving of driving mechanism 402 that it can be a flexible bearing.The free end of driving member 404 is connected to dividing plate 406.The size of dividing plate 406 and the first feed port 202a mate each other, and can be under the driving of driving member 404 away from or near driving mechanism 402.When dividing plate 406 was positioned at the position away from driving mechanism 402, it was arranged in the first feed port 202a and seals the first feed port 202a.So, through the driving may command reaction chamber 110 of driving mechanism 402 and 404 pairs of dividing plates 406 of driving member and being communicated with of wait chamber 204 with isolated.
Be appreciated that first switching arrangement 400 is not limited to this embodiment, also be not limited to be arranged on and wait in the chamber 204, as also can being arranged in the reaction chamber 110, as long as just can play and open or close the first feed port 202a or the first discharge hole 102b can.
Second switch device 500 is used to control waits for being communicated with and completely cutting off of chamber 204 and processing procedure chamber 308.Particularly, second switch device 500 comprises a cylinder 502 and a valve 504.The upper wall (figure mark) that cylinder 502 is arranged on second shell 202 is gone up and is arranged in and waits for chamber 204.Valve 504 be connected to cylinder 502 and can be by its driving near or away from cylinder 502.When valve 504 was positioned at the position away from cylinder 502, it sealed the second discharge hole 202b.So, wait for that through the driving may command of 502 pairs of valves 504 of cylinder chamber 204 is communicated with processing procedure chamber 308 with isolated.
Be appreciated that second switch device 500 is not limited to this embodiment, also be not limited to be arranged on and wait in the chamber 204, as also can being arranged in the processing procedure chamber 308, as long as just can play and open or close the second feed port 302a or the second discharge hole 202b can.
In the coating process; Earlier precursor is put into crucible 104; Open heating unit 108 and electron emission unit 106 then, so that 108 pairs first shells 102 of heating unit heat, electron emission unit 106 is launched high-power electron beams and is got into reaction chamber 110 through injecting hole 102a simultaneously.Under the bombardment of high-power electron beam, the precursor fusion evaporates the precursor gaseous molecular.Simultaneously, reactive gas source is imported reaction chamber 110 with reactant gas through the first air inlet port 102c according to required flow evenly, generates the required thing of plated film to react with the precursor gaseous molecular.Under the heating of heating unit 108, the reaction acceleration.In this embodiment, precursor is five oxidation Tritanium/Trititanium (Ti 3O 5), reactant gas is oxygen (O 2), the required thing of plated film that both react the back generation is gasiform titanium oxide (TiO 2).In the reaction process, first switching arrangement, 400 sealings, the first feed port 202a.Because reaction chamber 110 sealing, therefore, can guarantee precursor and reactant gas have competent seasonable between.
After both have reacted a setting-up time, can reach a predetermined concentration, think that the precursor gaseous molecular changes into the required thing of plated film, i.e. titanium oxide fully this moment.This moment first switching arrangement 400 ability driving mechanism 402 drive dividing plates 406 make away from the first feed port 202a reaction chamber 110 with wait for chamber 204 conductings.In this embodiment, first switching arrangement 400 is controled by operator.So, the required thing of plated film enters into and waits for chamber 204.First switching arrangement 400 seals the first feed port 202a once more afterwards; And chamber 204 is waited for the current-carrying gas input through the second air inlet port 202c according to required flow evenly in the current-carrying gas source, to mix with the required thing of plated film and to make the required thing of plated film be modulated to a desired concn.In this embodiment, current-carrying gas is nitrogen (N 2).This moment second switch device 500 cylinder 502 drive valves 504 near cylinder 502 so that wait for that chamber 204 is communicated with processing procedure chamber 308.In this embodiment, second switch device 500 is controled by operator.So, the required thing of mixed plated film gets into processing procedure chamber 308, and accumulation forms required film on substrate.And in the required thing accumulation of plated film process, drive unit 304 is gone back driving arm 306 rotations, so that the basic rete that plates out that is positioned on the support 306 is more even.In this embodiment, this required film is titanium deoxid film (TiO 2).
So, in the present invention, precursor can fully react in reaction chamber 110, and reacted precursor can be deployed into proper concn after getting into and waiting for chamber 204 therein, just gets into processing procedure chamber 308 accumulation on substrate at last and becomes required rete.So, the time of whole coating process raw material reaction and concentration all can be accurately controlled, and make that the purity of institute's coatings is high, and then have improved the plated film quality.
Preferably, film coating apparatus 10 also comprises a gear 600, and it comprises that 602, one of units are arranged at first sensor 604 and second sensor 606 that is arranged in the wait chamber 204 in the reaction chamber 110.Unit 602 is connected to the drive source 304a of processing apparatus 300, the driving mechanism 402 of first switching arrangement 400, cylinder 502, first sensor 604 and second sensor 606 of second switch device 500.First sensor 604 is used for first gas concentration in the sensing reaction chamber 110, when it arrives one first preset value, thinks that the precursor gaseous molecular changes into the required thing of plated film fully.The driving mechanism 402 of unit 602 controls this moment first switching arrangement 400 is opened dividing plate 406.Second sensor 606 is used for sensing and waits for second gas concentration in the chamber 204, and when it reached one second preset value, the ratio of current-carrying gas and the required thing of plated film met the requirements.This moment, the gas 502 of unit 602 control second switch devices 500 was opened valve 504.Simultaneously, the unit 602 drive source 304a that also controls processing apparatus 300 begins driving arm 306 rotations.
Preferably, film coating apparatus 10 comprises that also one second forms 200 ', one the 3rd switching arrangement 400 ' of 100 ', one second middle device of device and one the 4th switching arrangement 500 '.Wherein, Second forms 200 ', one the 3rd switching arrangement 400 ' of 100 ', one second middle device of device and one the 4th switching arrangement 500 ' and forms device 100; Middle device 200; The set-up mode of first switching arrangement 400 and second switch device 500 is consistent and symmetrically, and forms the lower left that device 100 and middle device 200 are positioned at processing apparatus 300, and second forms the lower right that device 100 ' and second middle device 200 ' are positioned at processing apparatus 300.So, film coating apparatus 10 just can plate the multilayer film that two kinds of required things of plated film alternately are formed by stacking to substrate.
Those skilled in the art will be appreciated that; Above embodiment only is to be used for explaining the present invention; And be not to be used as qualification of the present invention; As long as within connotation scope of the present invention, appropriate change that above embodiment did is all dropped within the scope that the present invention requires to protect with changing.

Claims (10)

1. film coating apparatus comprises:
One forms device, and it has a reaction chamber;
A middle device that is connected to this formation device, it has a wait chamber that is communicated with this reaction chamber;
A processing apparatus that is connected to this middle device, it has a processing procedure chamber that is connected to this wait chamber;
One first switching arrangement is used to control this reaction chamber and is communicated with this wait chamber with isolated; And
A second switch device is used for this wait chamber of control and is communicated with this processing procedure chamber with isolated; And
A gear is used to control the start of first and second switching arrangement.
2. film coating apparatus as claimed in claim 1 is characterized in that, this formation device comprises one first shell, a crucible, an electron emission unit and a heating unit; This first shell offers one and injects hole, first discharge hole and first air inlet port that is used to be connected to a reactive gas source that is communicated to this wait chamber, and this first shell forms this reaction chamber; This crucible is used for carrying precursor and is arranged on this reaction chamber; This electron emission unit is arranged on outside this first shell, is used to launch high-power electron beam and this electron beam and injects this reaction chamber of hole entering through this; This heating unit is wrapped in this first shell periphery to heat this first shell.
3. film coating apparatus as claimed in claim 2; It is characterized in that; This first shell has four sidewalls up and down; This is injected hole and this first discharge hole and lays respectively at about this first shell on two sidewalls, and this first air inlet port is positioned on the upper side wall of this first shell, and this crucible is arranged on the lower wall of this first shell.
4. film coating apparatus as claimed in claim 1; It is characterized in that; This middle device comprises one second shell; This second shell offers one and is communicated to first feed port of this reaction chamber, second discharge hole that is communicated to this processing procedure chamber and second air inlet port that is used to be connected to a current-carrying gas source, and this second shell forms should wait for the chamber.
5. film coating apparatus as claimed in claim 4; It is characterized in that; This second shell has four sidewalls up and down, and this second discharge hole and this second air inlet port lay respectively at this second shell up and down on two sidewalls, and this first feed port is positioned on this second shell left side wall.
6. film coating apparatus as claimed in claim 1; It is characterized in that; This processing apparatus comprises one the 3rd shell and a support; The 3rd shell forms this processing procedure chamber and offers second feed port that is connected to this wait chamber, and this support is used to carry substrate to be coated and is arranged in this processing procedure chamber.
7. film coating apparatus as claimed in claim 6 is characterized in that, this processing apparatus also comprises a drive unit, and the 3rd shell also begins to have an axis hole; This drive unit comprises that a drive source and one are connected to drive source and can be by the rotating shaft of its driven in rotation, and this drive source is arranged on outside the 3rd shell, and this rotating shaft is passed this axis hole and got into this processing procedure chamber; This support is fixed to this rotating shaft and can be by its driven in rotation.
8. film coating apparatus as claimed in claim 6 is characterized in that, the 3rd shell has four sidewalls up and down, and this second feed port and this axis hole lay respectively on the top and bottom sidewall of the 3rd shell.
9. film coating apparatus as claimed in claim 1 is characterized in that, this gear comprises one first sensor, one second sensor and a unit; This first sensor is arranged in this reaction chamber and is used for first gas concentration in this reaction chamber of sensing, and this second sensor is arranged in this wait chamber and is used for second gas concentration in this wait chamber of sensing; This unit is connected to this first sensor, second sensor, first switching arrangement and this second switch device; Be used for controlling opening or closing of this first switching arrangement, according to opening or closing of this second gas concentration this second switch device of control according to this first gas concentration.
10. film coating apparatus as claimed in claim 1 is characterized in that, this film coating apparatus comprises that also one second forms device, one second middle device, one the 3rd switching arrangement and one the 4th switching arrangement; This second formation device has one second reaction chamber; This second middle device is connected to this second formation device and this processing apparatus, and has second a wait chamber that is communicated with this second reaction chamber and this processing procedure chamber; The 3rd switching arrangement is arranged between this second reaction chamber and this second wait chamber, is used to control this second reaction chamber and is communicated with this second wait chamber with isolated; This second switch device is arranged between this second wait chamber and this processing procedure chamber, is used to control this second wait chamber and is communicated with this processing procedure chamber with isolated; This formation device and this middle device are positioned at the lower left of this processing apparatus, and this second formation device and this second middle device are positioned at the lower right of this processing apparatus.
CN2010102966085A 2010-09-29 2010-09-29 Coating device Pending CN102433553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010102966085A CN102433553A (en) 2010-09-29 2010-09-29 Coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010102966085A CN102433553A (en) 2010-09-29 2010-09-29 Coating device

Publications (1)

Publication Number Publication Date
CN102433553A true CN102433553A (en) 2012-05-02

Family

ID=45981895

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010102966085A Pending CN102433553A (en) 2010-09-29 2010-09-29 Coating device

Country Status (1)

Country Link
CN (1) CN102433553A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227203A (en) * 1992-02-24 1993-07-13 Nkk Corporation Ion-plating method and apparatus therefor
CN1735708A (en) * 2003-06-27 2006-02-15 应用微型构造公司 Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
CN101445907A (en) * 2007-11-27 2009-06-03 鸿富锦精密工业（深圳）有限公司 Vapor deposition device
TW201022471A (en) * 2008-12-15 2010-06-16 Ind Tech Res Inst Chemical vapor deposition apparatus and method of forminf parylene film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227203A (en) * 1992-02-24 1993-07-13 Nkk Corporation Ion-plating method and apparatus therefor
CN1735708A (en) * 2003-06-27 2006-02-15 应用微型构造公司 Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
CN101445907A (en) * 2007-11-27 2009-06-03 鸿富锦精密工业（深圳）有限公司 Vapor deposition device
TW201022471A (en) * 2008-12-15 2010-06-16 Ind Tech Res Inst Chemical vapor deposition apparatus and method of forminf parylene film

Similar Documents

Publication Publication Date Title
CN104377317B (en) Thin-film encapsulation layer manufacturing equipment and the method for showing equipment using its manufacture
JP6084841B2 (en) Lithium ion capacitor electrode manufacturing apparatus and method
KR102151616B1 (en) In-line deposition system and method for operating an evaporation source for organic material
US20070267065A1 (en) Chemical Liquid Supply System
KR20100028492A (en) Film formation apparatus and substrate processing apparatus
CN109943826A (en) A kind of multi-functional composite deposition equipment and its preparation process
CN102433553A (en) Coating device
CN103370437B (en) Light-transmitting rigid thin film
JP2010111916A (en) Vacuum deposition system, vapor deposition source, film deposition chamber and method for exchanging vapor deposition vessel
JP2014070241A (en) Vapor deposition device and vapor deposition method
CN101988190A (en) Pretreatment device and pretreatment method for film-coating substrate
WO2018210273A1 (en) Device and method for deposition of atomic layers having the same plasma source
JP2010202912A (en) Atomic layer deposition device and method therefor
US20120073499A1 (en) Coating device
CN211199385U (en) Evaporation source mechanism and sputter coating equipment
US20050241585A1 (en) System for vaporizing materials onto a substrate surface
JP4661405B2 (en) Vacuum deposition apparatus and electro-optical device manufacturing method
CN107513693A (en) A kind of modular manufacturing multipurpose devices of coiled vacuum coating machine
KR101393463B1 (en) Thin layer deposition apparatus
JP2009203488A (en) Thin-film-forming apparatus
TWI837801B (en) Precursor delivery systems, precursor supply packages, and related methods
CN207362325U (en) A kind of modular manufacturing multipurpose devices of coiled vacuum coating machine
JP2011171468A (en) Thin film formation device and method for forming the thin film
JP4949644B2 (en) Method for manufacturing Josephson element
CN219013998U (en) Precursor delivery system and precursor supply package

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120502