CN102427053A - Method for preventing breakage of ultralow dielectric constant film - Google Patents
Method for preventing breakage of ultralow dielectric constant film Download PDFInfo
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- CN102427053A CN102427053A CN2011101638389A CN201110163838A CN102427053A CN 102427053 A CN102427053 A CN 102427053A CN 2011101638389 A CN2011101638389 A CN 2011101638389A CN 201110163838 A CN201110163838 A CN 201110163838A CN 102427053 A CN102427053 A CN 102427053A
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- dielectric film
- ultralow
- interconnection line
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- ultralow dielectric
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Abstract
The invention discloses a method for preventing breakage of an ultralow dielectric constant film. The method comprises the following steps of: carrying out selective ultraviolet irradiation on the ultralow dielectric constant film, shielding parts needing groove interconnection by lightproof parts in a photomask, and lighting parts which do not need groove interconnection by UV (Ultravoilet) light of a photoetching machine, thereby effectively removing micropores in interconnected grooves. Therefore, the technical effects of improving the performances of devices and reducing the breakage of the ultralow dielectric constant film are realized.
Description
Technical field
The present invention relates to a kind of method for manufacturing integrated circuit, relate in particular to a kind of method of preventing the damage of ultralow dielectric film.
Background technology
Along with constantly dwindling of cmos device size; The dielectric constant k of the interconnected used dielectric medium of its back segment also constantly reduces, and people also constantly seeking new dielectric material, have developed into FSG, SiOC from initial simple silicon dioxide; Arrived below the 45nm node; People have introduced organic pore former in the growth course of SiOC, and the irradiation through UV light thereafter removes organic pore former and in film, forms micropore, finally reach the purpose of the dielectric constant that reduces film.
Yet because the existence of micropore in the film, film in follow-up procedure for processing, like etching, cleaning etc., sustains damage easily, finally causes the rising of thin-film dielectric constant and does not reach the design requirement.
Summary of the invention
The invention discloses a kind of method of preventing the damage of ultralow dielectric film; In order to solve in the prior art because the existence of micropore in the film; Film is easily in follow-up procedure for processing; Like etching, cleaning etc., sustain damage, finally cause the rising of thin-film dielectric constant and do not reach the problem that design requires.
Above-mentioned purpose of the present invention realizes through following technical scheme:
A kind of method of preventing the damage of ultralow dielectric film, wherein,
Step a: a photomask blank is set on a dielectric film, is doped with pore former in the said dielectric film, the zone that lighttight part covers in the photomask blank is the interconnection line trench region;
Step b: dielectric film is carried out illumination, to remove not by the pore former in the dielectric film of optical mask plate occlusion area;
Step c: the interconnection line trench region on dielectric layer carries out etching to form the interconnection line groove;
Steps d: in the interconnection line groove, carry out the deposit of copper diffusion barrier layer, carry out copper plating process and cmp afterwards.
The method of aforesaid prevention ultralow dielectric film damage, wherein, what said dielectric film adopted is the ultralow dielectric film.
The method of aforesaid prevention ultralow dielectric film damage wherein, is carried out illumination through ultraviolet light to dielectric film.
The method of aforesaid prevention ultralow dielectric film damage wherein, is carried out the pore former volatilization in the dielectric film after the illumination, in dielectric film, forms micropore.
The method of aforesaid prevention ultralow dielectric film damage, wherein, the pore former in the interconnection line trench region does not volatilize, thereby does not form micropore, so in subsequent technique, can not influence the dielectric constant of dielectric layer because of the processing procedure of etching and cleaning.
In sum, owing to adopted technique scheme, the present invention to prevent the method for ultralow dielectric film damage to solve in the prior art because the existence of micropore in the film; Film is easily in follow-up procedure for processing; Like etching, cleaning etc., sustain damage, finally cause the rising of thin-film dielectric constant and do not reach the problem that design requires; The present invention carries out UV-irradiation selectively to the ultralow dielectric film; Needs are done the interconnected place of groove cover, and the place of not doing groove utilizes the ultraviolet light (UV) in the mask aligner to carry out illumination, effectively remove the micropore in the interconnection line groove with lighttight part in the photomask blank; Thereby realize improving the performance of device, reduce the technique effect of ultralow dielectric film damage.
Description of drawings
Fig. 1 is the sketch map that photomask blank is set on dielectric film that the present invention prevents the method for ultralow dielectric film damage;
Fig. 2 be the present invention's method of preventing ultralow dielectric film damage dielectric film is carried out the structural representation after the illumination;
Fig. 3 is the sketch map after etching on the dielectric layer forms the interconnection line groove that the present invention prevents the method for ultralow dielectric film damage;
Fig. 4 is the structural representation behind the completion interconnection line of the present invention's method of preventing ultralow dielectric film damage.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
A kind of method of preventing the damage of ultralow dielectric film, wherein,
Fig. 1 is the sketch map that photomask blank is set on dielectric film that the present invention prevents the method for ultralow dielectric film damage; See also Fig. 1; Step a: deposit one dielectric film 201 on a substrate 101; One photomask blank 301 is set on a dielectric film 201, is doped with pore former 202 in the said dielectric film 201, the zone that lighttight part covers in the photomask blank 301 is interconnection line groove 203 zones;
Need ultralow dielectric constant material owing to make the zone of interconnection trench line, so said dielectric film 201 employings among the present invention is the ultralow dielectric film.
Fig. 2 be the present invention's method of preventing ultralow dielectric film damage dielectric film is carried out the structural representation after the illumination; See also Fig. 2; Step b: dielectric film 201 is carried out illumination, and the zone of not blocked by photomask blank 301 receives illumination, to remove not by the pore former 202 in the dielectric film 201 of photomask blank 301 occlusion areas; And can not received illumination by the zone that mask plate 301 blocks, so the pore former 202 of dielectric film 201 quilts can not volatilize;
Be dielectric film 201 to be carried out illumination among the present invention, carry out 202 volatilizations of the pore formers in the dielectric film 201 after the illumination, dielectric film 201 in, form micropore, form the dielectric film 201 dielectric constants decline behind the micropore through ultraviolet light (UV).
Pore former 202 in interconnection line groove 203 zones among the present invention does not volatilize; If there is micropore in the dielectric film 201 in interconnection line groove 203 zones; Then processing procedures such as the etching in the subsequent technique, cleaning will exert an influence to the dielectric constant of dielectric layer; This regional dielectric constant is risen, thereby influence the performance of device, can't reach technological requirement; So will not have micropore in the interconnection line groove 203 after the employing technical scheme provided by the invention, thereby in subsequent technique, can not influence the dielectric constant of dielectric layer because of processing procedures such as etching and cleanings.
Fig. 3 is the sketch map after etching on the dielectric layer forms the interconnection line groove that the present invention prevents the method for ultralow dielectric film damage; See also Fig. 3; Step c: etching is carried out to form interconnection line groove 203 in interconnection line groove 203 zones on dielectric layer; Because the dielectric film 201 in interconnection line groove 203 zones is micropore not, can be to not influencing this regional dielectric constant so carry out etching in this zone;
Fig. 4 is the structural representation behind the completion interconnection line of the present invention's method of preventing ultralow dielectric film damage, sees also Fig. 4, steps d: in interconnection line groove 203, carry out the deposit of copper diffusion barrier layer, carry out copper plating process and cmp afterwards.
In sum, owing to adopted technique scheme, the present invention to prevent the method for ultralow dielectric film damage to solve in the prior art because the existence of micropore in the film; Film is easily in follow-up procedure for processing; Like etching, cleaning etc., sustain damage, finally cause the rising of thin-film dielectric constant and do not reach the problem that design requires; The present invention carries out UV-irradiation selectively to the ultralow dielectric film; Needs are done the interconnected place of groove cover, and the place of not doing groove utilizes the ultraviolet light (UV) in the mask aligner to carry out illumination, effectively remove the micropore in the interconnection line groove with lighttight part in the photomask blank; Thereby realize improving the performance of device, reduce the technique effect of ultralow dielectric film damage.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (5)
1. a method of preventing the damage of ultralow dielectric film is characterized in that,
Step a: a photomask blank is set on a dielectric film, is doped with pore former in the said dielectric film, the zone that lighttight part covers in the photomask blank is the interconnection line trench region;
Step b: dielectric film is carried out illumination, to remove not by the pore former in the dielectric film of photomask blank occlusion area;
Step c: the interconnection line trench region on dielectric layer carries out etching to form the interconnection line groove;
Steps d: in the interconnection line groove, carry out the deposit of copper diffusion barrier layer, carry out copper plating process and cmp afterwards.
2. the method for prevention ultralow dielectric film damage according to claim 1 is characterized in that what said dielectric film adopted is the ultralow dielectric film.
3. the method for prevention ultralow dielectric film damage according to claim 1 is characterized in that, through ultraviolet light dielectric film is carried out illumination.
4. the method for prevention ultralow dielectric film according to claim 1 damage is characterized in that, carries out the pore former volatilization in the dielectric film after the illumination, in dielectric film, forms micropore.
5. the method for prevention ultralow dielectric film damage according to claim 1; It is characterized in that; Pore former in the interconnection line trench region does not volatilize, thereby does not form micropore, so in subsequent technique, can not influence the dielectric constant of dielectric layer because of the processing procedure of etching and cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101638389A CN102427053A (en) | 2011-06-17 | 2011-06-17 | Method for preventing breakage of ultralow dielectric constant film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101638389A CN102427053A (en) | 2011-06-17 | 2011-06-17 | Method for preventing breakage of ultralow dielectric constant film |
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| CN102427053A true CN102427053A (en) | 2012-04-25 |
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| CN2011101638389A Pending CN102427053A (en) | 2011-06-17 | 2011-06-17 | Method for preventing breakage of ultralow dielectric constant film |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6879046B2 (en) * | 2001-06-28 | 2005-04-12 | Agere Systems Inc. | Split barrier layer including nitrogen-containing portion and oxygen-containing portion |
| US7125793B2 (en) * | 2003-12-23 | 2006-10-24 | Intel Corporation | Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material |
| CN101060095A (en) * | 2006-04-18 | 2007-10-24 | 气体产品与化学公司 | Materials and methods of forming controlled void |
-
2011
- 2011-06-17 CN CN2011101638389A patent/CN102427053A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6879046B2 (en) * | 2001-06-28 | 2005-04-12 | Agere Systems Inc. | Split barrier layer including nitrogen-containing portion and oxygen-containing portion |
| US7125793B2 (en) * | 2003-12-23 | 2006-10-24 | Intel Corporation | Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material |
| CN101060095A (en) * | 2006-04-18 | 2007-10-24 | 气体产品与化学公司 | Materials and methods of forming controlled void |
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Application publication date: 20120425 |