CN102420199B - Semiconductor module - Google Patents

Semiconductor module Download PDF

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Publication number
CN102420199B
CN102420199B CN201110294109.7A CN201110294109A CN102420199B CN 102420199 B CN102420199 B CN 102420199B CN 201110294109 A CN201110294109 A CN 201110294109A CN 102420199 B CN102420199 B CN 102420199B
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Prior art keywords
resin
metallic plate
semiconductor module
circuit board
metal
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CN201110294109.7A
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CN102420199A (en
Inventor
大多信介
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Denso Corp
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Denso Corp
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Priority to JP2010215601A priority Critical patent/JP5454438B2/en
Priority to JP2010-215601 priority
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

The invention relates to a semiconductor module. A resin body (20) is formed into a flat shape which can cover a semiconductor chip (10). A plurality of terminals (31, 33) is electrically connected with the semiconductor chip (10), and protrudes from the resin body (20), so the protruding terminals (31, 33) are welded on a circuit board (130) to form a lead pattern (180). A metal plate (40) is formed into a plate shape and is arranged on a resin surface (21) of the resin body (20). A metal surface (43) of the metal plate (40) is exposed to the outside, and the other metal surface (44) is electrically connected with the semiconductor chip. The metal plate (40) is provided with an extending part (42). The metal plate (40) and the resin body satisfy the following relation: 0.5<=Sm/Sr<=1.0, wherein the Sm refers to the area of the extending part (42), and the Sr refers to the area of the resin body (20).

Description

Semiconductor module
Technical field
The present invention relates to a kind of semiconductor module, it performs the switching manipulation being used for drive motor and rotating, and especially, relates to a kind of semiconductor module installed on circuit boards.
Background technology
In recent years, a lot of parts of vehicle are by electric motor operated, and the quantity of motor and electronic control unit thereof increases thus.A lot of effort of the effective inner space for increasing vehicle are carried out, to provide comfortable space to user.Therefore, the space being preserved for motor and electronic control unit thereof becomes problem.Therefore, make motor and electronic control unit size less be important problem.
Such as, in the space of engine chamber or after instrument board, arrange the electronic control unit being used for vehicle power steering system.Because for electronic control unit big current (about 100A) drive motor of power steering system, so add the heat generated at switch element place.Therefore, high heat radiating structure must be had to make this electronic control unit size less.
Such as, prior art discloses 1 (Japanese Patent Publication No.2002-083912), prior art discloses 2 (the open No.S57-083746 of Japanese Utility Model) or prior art discloses the structure that 3 (the open No.S58-187153 of Japanese Utility Model) disclose the improvement of a kind of semiconductor module or electronic control unit, to improve the heat-radiating properties of semiconductor module.According to above prior art, semiconductor module disclosed in 1,2 or 3 is disclosed, the heat radiation plate (making with metal or resin) with the surface area larger than the surface area of in the surface of the resin body covering semiconductor chip is fixed to resin body, thus the heat that semiconductor chip generates is radiated in air via this heat radiation plate.
Disclose 1,2 or 3 according to above prior art, do not disclose any content of heat radiation plate relative to the detailed relative size of resin body.Such as, when the size of the extension of heat radiation plate distance resin body is little, in other words, when the ratio of surface area to the surface area of resin body of heat radiation plate (extension) is minimum, thermal radiation effect may be very little.On the other hand, when heat radiation plate greatly extends relative to resin body, not only the weight of heat radiation plate and material cost may increase, but also may be difficult to be kept for install on a printed circuit board semiconductor module and other electrically or the space of electronic section and assembly.
In addition, the semiconductor module of 1 to 3 is disclosed according to above prior art, because each in electronic section and assembly is so-called THD (via devices) type, workability and the performance that is used for volume production can be inferior to part and the assembly of so-called SMD (surface mount device) type for what these parts and assembly are fixed to circuit board.
Summary of the invention
In view of above problem makes the present invention.The object of the present invention is to provide a kind of semiconductor module, according to this semiconductor module, easier electronic section and assembly are installed to circuit board, and this semiconductor module has high-heating radiation performance.
According to embodiments of the invention, provide a kind of semiconductor module being installed to the surface of circuit board, described circuit board is arranged on to be had with in the electronic control unit of metal covering member, and described semiconductor module comprises: semiconductor chip, and it has the function of switching manipulation, resin body, it covers described semiconductor chip, and on the two opposite sides of described resin body, have the first resin surface and the second resin surface, multiple terminal, it is electrically connected to described semiconductor chip, gives prominence to from described resin body, and is welded to the lead pattern that described circuit board is formed, first metallic plate, be formed as tabular, and on the two opposite sides of described first metallic plate, there is the first metal surface and the second metal surface, described first metallic plate is provided at a surface in the first resin surface of described resin body and the second resin surface, make: one in first resin surface relative to described resin body in described first metal surface and the second metal surface and the second resin surface is exposed to outside, and another surface electrical in described first metal surface and the second metal surface is connected to described semiconductor chip, described first metallic plate has in the surface direction of described first metallic plate relative to the outward extending extension of described resin body, wherein, described extension is formed with the lead pattern formed on described circuit board and contacts, or to be formed with described covering member and contact, wherein, described first metallic plate and described resin body meet the relation of " 0.5≤Sm/Sr≤1.0 ", wherein, " Sm " is the area that described in a metal surface in the first metal surface of described first metallic plate and the second metal surface, extension is occupied, " Sr " is the area of the resin surface covered by described first metallic plate in the first resin surface of described resin body and the second resin surface, second metallic plate, be formed as tabular, and on the two opposite sides of described second metallic plate, there is the first metal sheet surface and the second metal sheet surface, wherein, described second metallic plate is provided in another surface in the first resin surface of described resin body and the second resin surface, make: a surface in described first metal sheet surface and described second metal sheet surface is exposed to outside relative to another surface in the first resin surface of described resin body and the second resin surface.
Such as, according to feature of the present invention, semiconductor module is installed to the surface of circuit board.Described semiconductor module has semiconductor chip, resin body and multiple terminal.Described semiconductor chip has the function of switching manipulation.Resin body is formed as tabular, to cover described semiconductor chip, and on the two opposite sides of described resin body, has the first resin surface and the second resin surface.Be electrically connected to semiconductor chip and the multiple terminal solderings given prominence to from resin body to the lead pattern formed on circuit boards.
Each in multiple terminal is electrically connected to source class, the drain and gate of semiconductor chip respectively, makes not only can to realize electric current to the cut-out of the supply of semiconductor chip or this electric current by these terminals and can realize the supply of control signal.
First metallic plate is formed as tabular, and on the two opposite sides of the first metallic plate, have the first metal surface and the second metal surface.Described first metallic plate is provided at a surface in the first resin surface of resin body and the second resin surface, make: one in first resin surface relative to resin body in the first metal surface and the second metal surface and the second resin surface is exposed to outside, and another metal surface is electrically connected to semiconductor chip.According to this feature, the heat from semiconductor chip can be sent to the first metallic plate effectively, then via the first metallic plate radiation.First metallic plate has on the direction on the plate surface of the first metallic plate relative to the outward extending extension of resin body.Therefore, via extension can effectively radiation from the heat of semiconductor chip.
When making the first metallic plate and resin body meets " Sm/Sr < 0.5 ", wherein, " Sm " is the area on the surface of extension, and " Sr " is the area on the surface of resin body, and the effect that may there is the first metallic plate radiations heat energy becomes too little problem.On the other hand, when making the first metallic plate and resin body meets the relation of " Sm/Sr > 1.0 ", the problem that weight and material cost will increase may be there is, and will the space being kept for other electronic section and assembly being installed to circuit board be difficult to.
Therefore, according to the present invention, make the first metallic plate and resin body meet the relation of " 0.5≤Sm/Sr≤1.0 ".
When meeting the relation of " 0.5≤Sm/Sr ", the surface area of the first metallic plate (described extension 42) and steric bulk (thermal mass) can be maintained at the value higher than predetermined value respectively.As a result, the heat from semiconductor chip can effectively be sent via the first metallic plate.In other words, semiconductor module of the present invention has high-heating radiation performance.
When meeting the relation of " Sm/Sr≤1.0 ", may increasing of weight and material cost can be suppressed, and can easily obtain the space other electronic section and assembly being installed to circuit board.
According to semiconductor module of the present invention, be installed to part and assembly that the part on the surface of circuit board and assembly are SMD types.Therefore, when comparing with assembly with the part of THD type, for part and assembly are installed to circuit board technique more simply, thus can workability and productivity ratio higher.
Accompanying drawing explanation
According to the following detailed description of carrying out with reference to accompanying drawing, above and other object of the present invention, feature and advantage will become clearer.In the accompanying drawings:
Figure 1A and Figure 1B schematically shows electronic control unit according to a first embodiment of the present invention, wherein, semiconductor module is installed to circuit board, wherein, Figure 1A is the schematic plan view of electronic control unit, and Figure 1B is the sectional view obtained along the line 1B-IB in Figure 1A;
Fig. 2 is the schematic diagram that the electronic control unit being according to a first embodiment of the present invention applied to power steering system is shown;
Fig. 3 A to Fig. 3 D schematically shows the semiconductor module of first embodiment of the invention, and wherein, Fig. 3 A is end view, and Fig. 3 B is top-level view, and Fig. 3 C is end view, and Fig. 3 D is bottom view;
Fig. 4 A to Fig. 4 D schematically shows the semiconductor module of comparative example, and wherein, Fig. 4 A is end view, and Fig. 4 B is top-level view, and Fig. 4 C is end view, and Fig. 4 D is bottom view;
Fig. 5 A to Fig. 5 C schematically shows semiconductor module according to a second embodiment of the present invention, and wherein, Fig. 5 A is top-level view, and Fig. 5 B is bottom view, and Fig. 5 C is the sectional view of the semiconductor module that the circuit board being installed to electronic control unit is shown;
Fig. 6 A to Fig. 6 C schematically shows semiconductor module according to a third embodiment of the present invention, and wherein, Fig. 6 A is top-level view, and Fig. 6 B is bottom view, and Fig. 6 C is the sectional view of the semiconductor module that the circuit board being installed to electronic control unit is shown;
Fig. 7 A to Fig. 7 C schematically shows semiconductor module according to a fourth embodiment of the present invention, and wherein, Fig. 7 A is top-level view, and Fig. 7 B is bottom view, and Fig. 7 C is the sectional view of the semiconductor module that the circuit board being installed to electronic control unit is shown;
Fig. 8 A to Fig. 8 C schematically shows semiconductor module according to a fifth embodiment of the present invention, and wherein, Fig. 8 A is top-level view, and Fig. 8 B is bottom view, and Fig. 8 C is the sectional view of the semiconductor module that the circuit board being installed to electronic control unit is shown;
Fig. 9 A to Fig. 9 C schematically shows semiconductor module according to a sixth embodiment of the present invention, and wherein, Fig. 9 A is top-level view, and Fig. 9 B is bottom view, and Fig. 9 C is the sectional view of the semiconductor module that the circuit board being installed to electronic control unit is shown; And
Figure 10 A and Figure 10 B schematically shows semiconductor module according to a seventh embodiment of the present invention, and wherein, Figure 10 A is end view, and Figure 10 B is bottom view.
Embodiment
The present invention is explained with reference to the accompanying drawings by multiple embodiment.In all embodiments identical label is provided for same or similar part and/or parts, thus omit its repeated description.
First the electronic control unit being wherein provided with semiconductor module 1 will be described with reference to Figure 1A, Figure 1B and Fig. 2.
As shown in Figure 2, electronic control unit (ECU) 110 is applied to the power steering system 100 of vehicle, thus ECU 110 operating motor 101, motor 101 generates based on manipulation torque signal, vehicle velocity signal etc. the auxiliary force being used for manipulation operation.
As shown in FIG. 1A and 1B, ECU 110 has board member 120, printed circuit board 130, control section 140, capacitor 150, connector 160 etc.
Board member 120 is made with metal such as aluminium, and is formed as close to rectangular shape (Figure 1A).
Printed circuit board 130 (hereinafter referred to as circuit board) is the plate made with the epoxy resin of glass fiber reinforcement (such as FR-4).Circuit board 130 is formed as the almost rectangular shape similar to board member 120, and its external dimensions is less than the external dimensions of board member 120.Circuit board 130 makes the surface of circuit board 130 almost parallel with the surface of board member 120 by being fixed to board member 120 by screw 191.
The semiconductor module 1 of this embodiment is installed to the surface as the opposite side surfaces with board member 120 of circuit board 130.That is, semiconductor module 1 is the electronic section of SMD type.In ECU 110, four semiconductor modules 1 are installed.
Control section 140 comprises microcomputer 141 and customization IC 142, and they are also installed to the surface contrary with board member 120 of circuit board 130.
Capacitor 150 is also installed to the surface of the circuit board 130 contrary with board member 120.According to this embodiment, three capacitors 150 are arranged in ECU 110, and wherein, they are with adjusting to a line and arrange with equal intervals.
Connector 160 is arranged on circuit board 130, thus the longitudinal direction of connector 160 is parallel with in the sidepiece of circuit board 130.Connector 160 has (Figure 1A) such as PIG (supply voltage) terminal 161, GND (ground connection) terminal 162, Terminal of motor 163.As shown in Figure 2, wire-lead 102 is connected to connector 160.The positive side terminal of battery 105 is electrically connected to PIG terminal 161 by the lead-in wire 103 of wire-lead 102.The coil-end of motor 101 is electrically connected to Terminal of motor 163 by the lead-in wire 104 of wire-lead 102.
Except above electronic section and assembly (semiconductor module 1, microcomputer 141, customization IC 142 and capacitor 150), relay 171 and 172, coil 173, by-passed resistor 174 are installed to the surface of the circuit board 130 contrary with board member 120 too.
The lead pattern (not shown) formed in the lead pattern 180 (Figure 1B) that the PIG terminal 161 of connector 160, GND terminal 162 and the surface of Terminal of motor 163 via circuit board 130 are formed and the inside of circuit board 130 is electrically connected to semiconductor module 1, microcomputer 141, customization IC 142, capacitor 150, relay 171 and 172, coil 173 and by-passed resistor 174 respectively.Such as, lead pattern is made with metallic film (such as copper).
The terminal 31 (source class end) of semiconductor module 1 is welded to lead pattern 180, and lead pattern 180 is connected to PIG terminal 161 (terminal 31 shown in Fig. 3 A to Fig. 3 D, as described below).The terminal 33 (gate terminal) of semiconductor module 1 is welded to lead pattern 180, and lead pattern 180 is connected to customization IC 142.In addition, the first metallic plate 40 (drain electrode end) of semiconductor module 1 is welded to lead pattern 180, and lead pattern 180 is connected to board member 120 or GND terminal 162.
Control signal is sent to the terminal (grid) 33 of each semiconductor module 1 by control section 140 (microcomputer 141) via customization IC 142, thus controls the switching manipulation (Fig. 3 A to Fig. 3 D) of each semiconductor chip 10.As a result, flow through the current controlled of Terminal of motor 163 (namely by the coil windings of motor 101), motor 101 is rotated.As above, control section 140 (microcomputer 141 and customization IC 142) controls the switching manipulation of each semiconductor module 1, controls the rotation process of motor 101 thus.
Capacitor 150 suppresses the surge voltage generated by the switching manipulation of semiconductor module 1.Coil 173 is the so-called chokes for eliminating the noise from battery 105.Relay 171 allows or forbids that electric current is in PIG terminal 161 and coil 173, flowing between capacitor 150 and semiconductor module 1.Relay 172 allows or forbids the flowing of electric current between semiconductor module 1 and Terminal of motor 163.By-passed resistor 174 detects the size flowing through the electric current of semiconductor module 1.Control section 140 (microcomputer 141 and customization IC 142) accurately controls the rotation process of motor 101 based on the value of the electric current detected by by-passed resistor 174.
Because electric current relatively large during switching manipulation flows through semiconductor module 1 and by-passed resistor 174, thus in semiconductor module 1 and by-passed resistor 174 producing heat.Its temperature is increased to relatively high value.
As shown in FIG. 1A and 1B, board member 120 has bossing 121 in the part corresponding with the region being wherein furnished with semiconductor module 1 and by-passed resistor 174, and wherein, bossing 121 protrudes towards circuit board 130.Bossing 121 is formed as the rectangle row shape corresponding with the shape in the region being wherein furnished with semiconductor module 1 and by-passed resistor 174, as shown in the dotted line in Figure 1A.
As shown in Figure 1B, each contact in the first metallic plate 40 of each semiconductor module 1 and be welded to the lead pattern 180 formed on circuit board 130.The heat generated at semiconductor chip 10 (Fig. 3 A and Fig. 3 B) is sent to circuit board 130 effectively via the first metallic plate 40 and lead pattern 180.
Thermal radiation plate 192 and the thermal radiation grease 193 of electric insulation are provided between the bossing 121 and circuit board 130 of board member 120.Such as, the thermal radiation plate 192 of electric insulation is to comprise silicon and the electric insulation sheet material with less thermal resistance is made.Thermal radiation grease 193 is such as comprise silicon as stock to have a colloid grease of less thermal resistance.
Space thermal radiation plate 192 between bossing 121 and circuit board 130 and thermal radiation grease 193 are filled, with the bossing 121 making the heat in circuit board 130 (heat semiconductor module 1 generates) effectively can be sent to board member 120.As above, bossing 121 serves as heat sink.
As the mode similar to the first metallic plate 40, the terminal 31 of semiconductor module 1 contacts with 33 and is welded to the lead pattern 180 that circuit board 130 is formed.As above, semiconductor module 1 is welded to lead pattern in multiple part, thus each in semiconductor module 1 is stably arranged on circuit board 130.
Semiconductor module 1 is explained in more detail with reference to Fig. 3 A to Fig. 3 D.
As shown in Figure 3 A and Figure 3 B, semiconductor module 1 has semiconductor chip 10, resin body 20, terminal part 30, first metallic plate 40 etc.
Such as, semiconductor chip 10 is the transistor of field effect type, such as MOSFET.According to semiconductor chip 10, allow according to the control signal of the grid to be input to semiconductor chip 10 or forbid the current flowing between source class and grid.As above, semiconductor chip 10 has the function of switch element.
Resin body 20 is made with the resin of plate shape, and to cover semiconductor chip 10, thus protection semiconductor chip 10 does not affect by external impact, humidity etc.According to this embodiment, resin body 20 is formed as rectangular shape.Therefore, resin body 20 has six (first to the 6th) resin surfaces 21 to 26.First resin surface 21 and the second resin surface 22 are formed on opposition side respect to one another.
Terminal part 30 is made with metal, and comprises three (first to the 3rd) terminals 31 to 33.
One end of the first terminal 31 is electrically connected to the source class of semiconductor chip 10, and the other end of the first terminal 31 is given prominence to from the side surface (the 4th resin surface) 24 of resin body 20.This ledge of the first terminal 31 bends towards lower surface (the first resin surface) 21, and then the front end of ledge bends further towards the direction contrary with resin body 20.
One end of second terminal 32 is electrically connected to the drain electrode of semiconductor chip 10 via the first metallic plate 40 (explaining below).The other end of the second terminal 32 is given prominence to from the side surface 24 of resin body 20.
One end of 3rd terminal 33 is electrically connected to the grid of semiconductor chip 10, and the other end of the 3rd terminal 33 is given prominence to from the side surface 24 of resin body 20.In the mode similar to the first terminal 31, the ledge of the 3rd terminal 33 bends towards lower surface (the first resin surface) 21, and then the front end of ledge bends further towards the direction contrary with resin body 20.
First metallic plate 40 is made with metal (such as aluminium), and is formed as plate shape.First metallic plate 40 has (namely being formed on its opposition side) respect to one another first metal surface 43 and second metal surface 44.First metallic plate 40 comprises main part 41 and extension 42.Main part 41 and extension 42 are connected to each other on the direction on its plate surface.That is, main part 41 and extension 42 are formed integrally as is a component.
Arrange the first metallic plate 40 at the lower surface (the first resin surface) 21 of resin body 20, make the lower surface of the first metallic plate 40 (the first metal surface) 43 be connected to the lower resin surface 21 of resin body 20 continuously.That is, the plane that the plane of the lower resin surface 21 with resin body 20 is identical is arranged the lower metal surface 43 of the first metallic plate 40.Therefore, except lower metal surface 43, resin body 20 covers the main part 41 of the first metallic plate 40.In other words, the lower metal surface (the first metal surface) 43 of the first metallic plate 40 is exposed to outside relative to the lower resin surface (the first resin surface) 21 of resin body 20.
The extension 42 of the first metallic plate 40 is not covered by resin body 20, and extends relative to the side surface (the 3rd resin surface) 23 of resin body 20.In other words, what extension 42 corresponded to the first metallic plate 40 is not covered (being exposed to outside) by resin body 20 and the part extended relative to resin body 20.
The upper surface (the second metal surface) 44 (or rather, the upper surface of main part 41) of the first metallic plate 40 is electrically connected to the drain electrode of semiconductor chip 10.
The size of the various piece of semiconductor module 1 is explained with reference to Fig. 3 C and Fig. 3 D.
As shown in Figure 3 C, " Lm " refers to the length (i.e. the length of the part of first metallic plate 40 outward extending relative to the side surface 23 of resin body 20) of the extension 42 of the first metallic plate 40." Lr " refers to the distance of the resin body 20 from side surface 24 to side surface 23.According to this embodiment, the first metallic plate 40 and resin body 20 is so made to meet the relation of " Lm/Lr ≈ 0.75 ".
" Sm " refers to the area (area of the part of first metallic plate 40 times (first) metal surfaces 43) of extension 42, and it is indicated by the hatched grid in Fig. 3 D." Sr " refers to the area of resin body 20 times (first) resin surfaces 21, and it is indicated by the grid of the horizontal and vertical lines in Fig. 3 D.The width (from resin surface 25 to the length of resin surface 26) of resin body 20 is no better than the width of extension 42.Therefore, the first metallic plate 40 and resin body 20 is so made to meet the relation of " Sm/Sr ≈ 0.75 ".Or rather, according to this embodiment, " Lm "=6.4 (mm), " Lr "=8.5 (mm).
According to this embodiment, the area (i.e. the area of main part 41) of the lower metal surface 43 of the first metallic plate 40 is less than the area " Sr " of the lower resin surface 21 of resin body 20.
Comparative example is explained with reference to Fig. 4 A to Fig. 4 D.
The different length being the extension 42 of the first metallic plate 40 of the semiconductor module 200 of comparative example and the semiconductor module 1 of the first embodiment.
" Lm1 " refers to the length of the extension 42 of the first metallic plate 40 according to comparative example in figure 4 c, and wherein, " Lm1 " is arranged on the value of 1.5 (mm).In comparative example, the ratio of " Lm1/Lr " is about 0.18 (Lm/Lr ≈ 0.18).
Therefore, area ratio is also about 0.18 (Sm1/Sr ≈ 0.18)." Sm1 " is the area of the extension 42 indicated by the hatched grid in Fig. 4 D." Sr " is the area of the resin body 20 indicated by the grid of the horizontal and vertical lines in Fig. 4 D.
According to comparative example, the area of extension 42 is less than the area of the first embodiment.Therefore, semiconductor module 200 is less than the effect of the first embodiment for the effect of the heat of radiation-emitting semi-conductor chip 10.When compared with the operating temperature of the semiconductor module that the circuit board of electronic control unit is installed, the operating temperature of the semiconductor module 1 of the first embodiment is lower than the operating temperature of comparative example almost 20 DEG C.
As mentioned above, according to the first embodiment, resin body 20 is formed as tabular, to cover semiconductor chip 10.Terminal 31 to 33 is electrically connected to semiconductor chip 10, and gives prominence to relative to resin body 20.Terminal 31 and 33 is welded to each lead pattern 180 that the circuit board 130 of electronic control unit is formed.Terminal 31 is connected to the source class of semiconductor chip 10.Terminal 33 is connected to the grid of semiconductor chip 10.According to this structure, can supply or cut-off current via terminal 31 and 33 pairs of semiconductor chips 10.First metallic plate 40 is formed as tabular, and its lower surface (the first metal surface) 43 is exposed to outside relative to the lower resin surface 21 of resin body 20, and its upper surface (the second metal surface) 44 is electrically connected to semiconductor chip 10.According to this structure, the heat from semiconductor chip 10 can be sent to the first metallic plate 40 effectively.Then, heat can be radiated air via the first metallic plate 40.
In addition, according to this embodiment, the first metallic plate 40 has extension 42, and it extends relative to resin body 20 on the direction on plate surface.Thus, can via extension 42 effectively radiation from the heat of semiconductor chip 10.According to this embodiment, the first metallic plate 40 and resin body are configured to the relation meeting " Sm/Sr ≈ 0.75 ", and wherein, " Sm " is the area of the lower metal surface 43 of extension 42, and " Sr " is the area of the lower resin surface 21 of resin body 20.
In other words, when meeting the relation of " 0.5≤Sm/Sr ", the surface area of the first metallic plate 40 (extension 42) and steric bulk (thermal mass) can be remained on these values higher than predetermined value respectively.Therefore, can the heat that generates at semiconductor chip 10 place of radiation effectively via the first metallic plate 40.That is, the semiconductor module 1 of this embodiment has high-heating radiation performance.
In addition, when meeting the relation of " Sm/Sr≤1.0 ", may increasing of the weight of the first metallic plate 40 and cost can be suppressed.Space on the circuit board 130 that easily can also be kept for electronics and/or electric part and assembly to be installed to circuit board.
According to this embodiment, the first metallic plate 40 and resin body 20 are configured to the relation meeting " Sm/Sr=0.75 ".Therefore, thermal-radiating effect is carried out via the first metallic plate 40 and the effect for the increase suppressing weight and manufacturing cost is superimposed.Each in effect can maximally increase.
According to the semiconductor module 1 of this embodiment, be installed to part and assembly that the part on the surface of circuit board 130 and assembly are SMD types.Therefore, when comparing with assembly with the part of THD type, for part and assembly are installed to circuit board 130 technique more simply, thus can workability and productivity ratio higher.
According to this embodiment, (the first metallic plate 40 is attached to) resin body 20 times (first) resin surfaces 21 contact with circuit board 130.Therefore, the first metallic plate 40 times (first) metal surfaces 43 can contact with circuit board 130.The extension 42 of the first metallic plate 40 is welded to the lead pattern 180 that circuit board 130 is formed.According to this structure, the heat from semiconductor chip 10 can be sent to circuit board 130 effectively via the first metallic plate 40 and lead pattern 180.
In addition, according to this embodiment, the first metallic plate 40 is used as the terminal of the drain electrode of semiconductor chip 10.Terminal 31 and 33 and the first metallic plate 40 are welded to the lead pattern that circuit board 130 is formed.Therefore, semiconductor module 1 can stably remain in the position on circuit board 130.
(the second embodiment)
Fig. 5 A to Fig. 5 C illustrates semiconductor module 2 according to a second embodiment of the present invention.
According to the second embodiment, terminal 31 and the shape of 33 and structure for semiconductor module 2 being installed to circuit board 130 different from the first embodiment.
According to semiconductor module 2, terminal 31 and 33 is given prominence to relative to the side surface 24 of resin body 20, and each in these ledges bends towards the second resin surface 22.Then, the front end of ledge bends further on the direction away from resin body 20, as shown in Figure 5 C.
Fig. 5 C illustrates that semiconductor module 2 is installed to the situation of the circuit board 130 of electronic control unit 110.Semiconductor module 2 is positioned as making: the second resin surface 22 (surface that the first resin surface 21 be namely attached to the first metallic plate 40 is contrary) of resin body 20 contacts with the lead pattern 180 that circuit board 130 is formed.The terminal 31 and 33 of semiconductor module 2 is welded to respective lead pattern 180, thus semiconductor module 2 is installed to the surface of circuit board 130.
Electronic control unit 110 has with metal covering member 194, thus forms spatial accommodation between board member 120 and covering member 194, thus in spatial accommodation containment circuit board 130.The electronic section that covering member 194 covering board 130 is installed and assembly, thus protect them not by external impact, liquid etc.
As shown in Figure 5 C, the first metallic plate 40 (or rather, the first metal surface 43 of the first metallic plate 40) of semiconductor module 2 contacts with covering member 194.According to this structure, the drain electrode of semiconductor chip 10 is connected to covering member 194 via the first metallic plate 40.In other words, when semiconductor module 2 works, the earth current of semiconductor module 2 flows to covering member 194 via the first metallic plate 40.
According to above structure, the heat from semiconductor chip 10 is not only sent to the bossing 121 of board member 120 via lead pattern 180 and circuit board 130, but also is sent to covering member 194 via the first metallic plate 40.And heat is finally radiated air from board member 120 and covering member 194.
Except the structure explained above, the second embodiment is identical with the first embodiment.
(the 3rd embodiment)
Fig. 6 A to Fig. 6 C illustrates semiconductor module 3 according to a third embodiment of the present invention.
The semiconductor module 3 of the 3rd embodiment is different from the second embodiment is that it has an add ons.
Semiconductor module 3 has the second metallic plate 50, and it is made with metal (such as aluminium), and is formed as tabular.Second metallic plate 50 has first metal sheet surface 51 and second metal sheet surface 52 of (on its opposition side) opposite each other.There is provided the second metallic plate 50 at the second resin surface 22 place of resin body 20, thus the first metal sheet surface 51 (lower surface in Fig. 6 C) of the second metallic plate 50 is positioned on the same level of the second resin surface 22 of resin body 20.That is, the first metal sheet surface 51 of the second metallic plate 50 is exposed to outside (Fig. 6 B and Fig. 6 C) relative to the second resin surface 22 of resin body 20.
According to this embodiment, the second metal sheet surface 52 (upper surface in Fig. 6 C) of the second metallic plate 50 is not electrically connected to semiconductor chip 10.By the mode identical with the second embodiment, when installing semiconductor module 3 in electronic control unit 110, the second resin surface 22 of resin body 20 contacts with circuit board 130.First metal sheet surface 51 of the second metallic plate 50 contacts with the lead pattern 180 that circuit board 130 is formed.According to this embodiment, the side surface between the first metal sheet surface of the second metallic plate 50 and the second metal sheet surface 51 and 52 is exposed to outside relative to the side surface 23 of resin body 20, and wherein, the exposed surface of the second metallic plate 50 is welded to lead pattern 180.
By the mode identical with the second embodiment, according to semiconductor module 3, from semiconductor chip 10 heat not only via the first metallic plate 40 from covering member 194 radiation, but also via bossing 121 radiation from board member 120 of the second metallic plate 50, lead pattern 180 and circuit board 130.
Except the structure explained above, the semiconductor module 3 of the 3rd embodiment is identical with the second embodiment.
Because the 3rd embodiment has the second metallic plate 50, the heat therefore from semiconductor chip 10 can not only via the first metallic plate 40 but also via the second metallic plate 50 radiation.Therefore, the thermoradiation efficiency of the 3rd embodiment is higher than the second embodiment.
In addition, the first metal sheet surface 51 of the second metallic plate 50 contacts with lead pattern 180, and the second metallic plate 50 is welded to lead pattern 180.According to this structure, the heat from semiconductor chip 10 can be sent to circuit board 130 effectively via the second metallic plate 50 and lead pattern 180.
In addition, because the terminal 31 and 33 of semiconductor module 3 and the second metallic plate 50 are welded to lead pattern 180, therefore semiconductor module 3 is stably positioned on circuit board 130.
(the 4th embodiment)
Fig. 7 A to Fig. 7 C illustrates semiconductor module 4 according to a fourth embodiment of the present invention.
The semiconductor module 4 of the 4th embodiment shape that be first metallic plate 40 different from the second embodiment.
First metallic plate 40 has leg section 421, and it is extending further relative to one end (one end at the opposite side of main part 41) of the extension 42 of the first metallic plate 40 on the second resin surface 22 direction of resin body 20.The front end of leg section 421 bends further on the direction away from resin body 20.The front end of leg section 421 is almost positioned on the same level of the second resin surface 22 of resin body 20.
By the mode identical with the second embodiment, when installing semiconductor module 4 in electronic control unit 110, the second resin surface 22 of resin body 20 contacts with the lead pattern 180 on circuit board 130.The front end of leg section 421 is welded to lead pattern 180.The lead pattern 180 that leg section 421 is welded to is connected to GND terminal 162 or board member 120.Therefore, leg section 421 (the first metallic plate 40) can be used as the terminal of the drain electrode of semiconductor chip 10.According to above structure, the first metallic plate 40 need not contact with covering member 194 as the second embodiment.
As mentioned above, according to this embodiment, one end that the first metallic plate 40 has relative to extension 42 extends towards circuit board 130 and is welded to the first metallic plate 40 of lead pattern 180 that circuit board 130 is formed.Therefore, the heat from semiconductor chip 10 can be sent to circuit board 130 effectively via the first metallic plate 40 (extension 42 and leg section 421) and lead pattern 180.Then, heat is finally radiated air from circuit board 130.
In addition, according to semiconductor module 4, because the terminal 31 and 33 of the first metallic plate 40 and leg section 421 are welded to lead pattern 180, therefore semiconductor module 3 is stably positioned on circuit board 130.
Leg section 421 can be used as the terminal of the drain electrode of semiconductor chip 10.
(the 5th embodiment)
Fig. 8 A to Fig. 8 C illustrates semiconductor module 5 according to a fifth embodiment of the present invention.
The semiconductor module 5 of the 5th embodiment is different from the first embodiment is that it has an add ons.
Semiconductor module 5 has the second metallic plate 60, and it is made with metal (such as aluminium), and is formed as tabular.Second metallic plate 60 has first metal sheet surface 61 and second metal sheet surface 62 of (on its opposition side) opposite each other.There is provided the second metallic plate 60 at the second resin surface 22 place of resin body 20, thus the first metal sheet surface 61 of the second metallic plate 60 is positioned on the same level of the second resin surface 22 of resin body 60.In other words, the first metal sheet surface 61 of the second metallic plate 60 is exposed to outside relative to the second resin surface 22 of resin body 20.
According to this embodiment, the second metal sheet surface 62 of the second metallic plate 60 is electrically connected to the source class of semiconductor chip 10.In addition, terminal 31 is electrically connected to the source class of semiconductor chip 10 via the second metallic plate 60.According to this structure, when semiconductor module 5 works, relatively large electric current (source class electric current) flows through the second metallic plate 60.As a result, at the second metallic plate 60 place producing heat.Because the second metallic plate 60 has the thermal mass of specified quantitative, therefore can radiations heat energy effectively.
(the 6th embodiment)
Fig. 9 A to Fig. 9 C illustrates semiconductor module 6 according to a sixth embodiment of the present invention.
The semiconductor module 6 of the 6th embodiment is different from the first embodiment is the structure of the first metallic plate 40 and the structure for the circuit board 130 that semiconductor module 6 is installed to electronic control unit 110.
The extension 42 of the first metallic plate 40 has in the vertical direction the through hole 422 by extension 42 on (thickness direction of extension 42).
When installing semiconductor module 6 in electronic control unit 110, screw 195 (fixture) is inserted by through hole 422, and is affixed to the bossing 121 of (screw-in) board member 120.Thus, semiconductor module 6 is firm and be stably fixed to circuit board 130.
According to this embodiment, the heat from semiconductor chip 10 can be sent to circuit board 130 and board member 120 (bossing 121) via the first metallic plate 40 (extension 42) and screw 195.Heat is finally radiated air from board member 120.
In addition, the first metallic plate 40 is electrically connected to the drain electrode of semiconductor chip 10.Therefore, when semiconductor module 6 is by being fixed to circuit board 130 with metal screw 195, the earth current (drain current) of semiconductor module 6 can flow to the bossing 121 of board member 120 via screw 195.
(the 7th embodiment)
Figure 10 A to Figure 10 C illustrates semiconductor module 7 according to a seventh embodiment of the present invention.
The thickness of the first metallic plate 40 of the 7th embodiment is different from the first embodiment.
In the semiconductor module 7 of the 7th embodiment, " Tm " refers to the thickness of the extension 42 of the first metallic plate 40, and " Tr " refers to the thickness of resin body 20.First metallic plate 40 and resin body are configured to the relation (ratio) meeting " Tm/Tr ≈ 0.4 ".Or rather, according to this embodiment, " Tm " is 1.9 (mm), and " Tr " is 4.7 (mm), thus the ratio of " Tm/Tr " is about 0.4.
Except the point explained above, the structure of the semiconductor module 7 of this embodiment is identical with the first embodiment.
When the first metallic plate 40 and resin body 20 are configured to the relation meeting " 0.3≤Tm/Tr ", the steric bulk (thermal mass) of the first metallic plate 40 can be made to remain on the value larger than predetermined value.As a result, the thermal-radiating effect of the first metallic plate 40 can be increased.
On the other hand, when the first metallic plate 40 and resin body 20 are configured to the relation meeting " Tm/Tr≤0.5 ", the increase of weight and the increase of material cost of the first metallic plate 40 can be suppressed.
As above, be configured to the result of the relation (ratio) meeting " Tm/Tr ≈ 0.4 " as the first metallic plate 40 and resin body 20, the effect of the effect for increasing heat-radiating properties and the increase for the weight and material cost that suppress the first metallic plate is superimposed.In addition, each in effect can maximally increase.
(other embodiment and amendment)
When the first metallic plate 40 and resin body 20 are configured to the relation meeting " 0.5≤Sm/Sr≤1.0 ", the first metallic plate 40 and resin body 20 can be made by the size of any kind and the shape of any kind.In other words, extension 42 and the resin body 20 of the first metallic plate 40 can be formed by shape besides rectangular shapes.Also the thickness of the first metallic plate and resin body can be changed by various mode.
However, it is more preferred that make: the first metallic plate 40 and resin body 20 meet the relation of " Sm/Sr=0.75 ".More preferably make: the first metallic plate 40 and resin body 20 not only meet the relation of " 0.5≤Sm/Sr≤1.0 ", but also meet the relation of " 0.3≤Tm/Tr≤0.5 ".In addition, be most preferred when meeting the relation of " Tm/Tr=0.4 ".According to this situation, for increasing the effect of heat-radiating properties with for suppressing the effect for the weight of the first metallic plate and the increase of material cost superimposed.And each in effect can maximally increase.
In above first embodiment, the 4th embodiment and the 5th embodiment, the first metallic plate 40 is connected to the drain terminal of semiconductor chip 10, and terminal 31 is connected to the source class terminal of semiconductor chip 10.But the first metallic plate 40 can be connected to the source class terminal of semiconductor chip 10, and terminal 31 can be connected to the drain terminal of semiconductor chip 10.According to this amendment, when semiconductor module works, source class electric current flows through the first metallic plate 40, and earth current (drain current) flows through terminal 31.
In the embodiment above, the terminal 32 of semiconductor module is free of attachment to the lead pattern that (being welded to) circuit board is formed.But, terminal 32 can be connected to (being welded to) lead pattern, and the drain terminal being used as semiconductor chip.
Multiple embodiment can combination with one another above, unless any infeasible.
The electronic control unit wherein having installed semiconductor module of the present invention not only can be applied to power steering system but also be applied to other system any of the operation for controlling motor.
The present invention should not be limited to above embodiment, and can be revised by various mode when not departing from its spirit.

Claims (9)

1. one kind is installed to the semiconductor module on the surface of circuit board (130), described circuit board (130) is arranged on to be had with in the electronic control unit of metal covering member (194) (110), and described semiconductor module comprises:
Semiconductor chip (10), it has the function of switching manipulation;
Resin body (20), it covers described semiconductor chip (10), and on the two opposite sides of described resin body (20), have the first resin surface (21) and the second resin surface (22);
Multiple terminal (31,33), it is electrically connected to described semiconductor chip (10), gives prominence to from described resin body (20), and is welded to the upper lead pattern (180) formed of described circuit board (130);
First metallic plate (40), is formed as tabular, and has the first metal surface (43) and the second metal surface (44) on the two opposite sides of described first metallic plate (40),
Described first metallic plate (40) is provided at a surface in first resin surface (21) of described resin body (20) and the second resin surface (22), make: one in first resin surface (21) relative to described resin body (20) in described first metal surface (43) and the second metal surface (44) and the second resin surface (22) is exposed to outside, and another surface electrical in described first metal surface (43) and the second metal surface (44) is connected to described semiconductor chip (10),
Described first metallic plate (40) has relative to described resin body (20) outward extending extension (42) in the surface direction of described first metallic plate (40),
Wherein, described extension (42) are formed to contact or formed with described covering member (194) with the lead pattern (180) above formed at described circuit board (130) and contact,
Wherein, described first metallic plate (40) and described resin body (20) meet the relation of " 0.5≤Sm/Sr≤1.0 ",
Wherein, " Sm " is the area that described in a metal surface in first metal surface (43) of described first metallic plate (40) and the second metal surface (44), extension (42) is occupied, " Sr " is the area of the resin surface covered by described first metallic plate (40) in first resin surface (21) of described resin body (20) and the second resin surface (22)
Second metallic plate (50,60), is formed as tabular, and on the two opposite sides of described second metallic plate (50,60), have the first metal sheet surface (51,61) and the second metal sheet surface (52,62),
Wherein, described second metallic plate (50,60) another surface in first resin surface (21) of described resin body (20) and the second resin surface (22) is provided in, make: described first metal sheet surface (51,61) surface and in described second metal sheet surface (52,62) is exposed to outside relative to another surface in first resin surface (21) of described resin body (20) and the second resin surface (22).
2. semiconductor module as claimed in claim 1, wherein, described first metallic plate (40) and described resin body (20) meet the relation of " Sm/Sr=0.75 ".
3. semiconductor module as claimed in claim 1, wherein,
Described first metallic plate (40) and described resin body (20) meet the relation of " 0.3≤Tm/Tr≤0.5 ",
Wherein, " Tm " is the thickness of the extension (42) of described first metallic plate (40), and " Tr " is the thickness of described resin body (20).
4. semiconductor module as claimed in claim 3, wherein,
Described first metallic plate (40) and described resin body (20) meet the relation of " Tm/Tr=0.4 ".
5. the semiconductor module as described in claim 1 or 3, wherein,
Described extension (42) has the through hole (422) passed on the thickness direction of described extension (42).
6. the semiconductor module as described in claim 1 or 3, wherein,
Another surface electrical in first metal sheet surface (61) of described second metallic plate (60) and the second metal sheet surface (62) is connected to described semiconductor chip (10).
7. the semiconductor module as described in claim 1 or 3, wherein,
First resin surface (21) of described resin body (20) and another surface in the second resin surface (22) are formed with described circuit board (130) and contact, and
Described second metallic plate (50) is welded at the upper lead pattern (180) formed of described circuit board (130).
8. the semiconductor module as described in claim 1 or 3, wherein,
First resin surface (21) of described resin body (20) and another surface in the second resin surface (22) are formed with described circuit board (130) and contact, and
Described extension (42) has leg section (421), and described leg section (421) extends to described circuit board (130) and is welded in the upper lead portion (180) formed of described circuit board (130).
9. the semiconductor module as described in claim 1 or 3, wherein,
First resin surface (21) of described resin body (20) and surface described in the second resin surface (22) are formed with described circuit board (130) and contact, and
The described extension (42) of described first metallic plate (40) is welded in the upper lead portion (180) formed of described circuit board (130).
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