CN102403323A - Wafer level image sensor packaging structure and manufacturing method thereof - Google Patents
Wafer level image sensor packaging structure and manufacturing method thereof Download PDFInfo
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- CN102403323A CN102403323A CN2010102871899A CN201010287189A CN102403323A CN 102403323 A CN102403323 A CN 102403323A CN 2010102871899 A CN2010102871899 A CN 2010102871899A CN 201010287189 A CN201010287189 A CN 201010287189A CN 102403323 A CN102403323 A CN 102403323A
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Abstract
The invention relates to a wafer level image sensor packaging structure and a manufacturing method of the wafer level image sensor packaging structure, wherein the manufacturing method comprises the following steps of: providing a silicon wafer with an image sensor chip; providing a plurality of transparent boards; correspondingly arranging the distributed transparent boards above a photosensitive area of the image sensor chip; and packaging. The manufacturing method has the advantages of simplified manufacturing process, low manufacturing cost and high product yield; and as a plastic packaging material is arranged on the first surface of the image sensor chip and is coated on the peripheries of the transparent boards, the problem of side light leakage generated in a traditional chip size package (CSP) manner can be solved, and the image sensing efficiency of the wafer level image sensor packaging structure is further improved.
Description
Technical field
The present invention relates to a kind of wafer scale CIS assembling structure and manufacturing approach thereof, particularly relate to a kind of wafer scale CIS assembling structure and manufacturing approach thereof that is applied to batch to make the CIS assembling structure.
Background technology
Along with the universalness of global digitized video product, add camera mobile phone, digital camera, digital camera shadow machine ... wait selling fast of various digitized video product in recent years, make the market of digitized video sensor enjoy good.
Wherein, CIS can be divided into charge coupled cell (Charge-coupled Device again according to its manufacture craft; CCD) and complementary metal oxide semiconductors (CMOS) (ComplementaryMetal-Oxide-Semiconductor; CMOS) two types, though wherein charge coupled cell technology maturation, image quality are good, because of its special manufacture craft technology can make cost improve.Otherwise; Complementary metal oxide semiconductors (CMOS) makes through semiconductor chip fabrication technology that it has that cost is low, manufacture craft is relatively easy and have compact advantage; Be suitable for the products low such as camera mobile phone, so certain market segments are arranged with charge coupled cell to the resolution requirement.
Traditional CIS encapsulation is divided into COB (Chip On Board) and chip scale encapsulation (Chip Scale Package, CSP) two kinds.Wherein traditional COB packaged type needs image sensing chip is sticked on the substrate; Utilize plain conductor to electrically connect substrate and image sensing chip; Again through encapsulation technology encapsulation image sensing chip, so the CIS assembling structure size after the encapsulation greatly and have a certain altitude.Traditional chip scale packaged type is then than the image sensing chip that is more suitable for low pixel; Application in higher pixel; Because of cost does not more have competitiveness; And because of original glass structure, cause the image sensor module height to increase when arranging in pairs or groups, and the image sensing quality is also poor than the COB encapsulation with camera lens module.In addition; Have the problem of side light leakage on the traditional die size level packaged type structure; So in the image sensor module packaging technology, must increase light shield or apply light shield layer, in order to avoid the image sensing quality to reduce or to cause dazzle problems such as (Flare) at the assembling structure side.
This shows that above-mentioned existing wafer scale CIS assembling structure and manufacturing approach thereof obviously still have inconvenience and defective, and demand urgently further improving in product structure, manufacturing approach and use.In order to solve the problem of above-mentioned existence; Relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly; But do not see always that for a long time suitable design is developed completion; And common product and method do not have appropriate structure and method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new wafer scale CIS assembling structure and manufacturing approach thereof, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The objective of the invention is to; Overcome the defective that existing wafer scale CIS assembling structure and manufacturing approach thereof exist; And a kind of new wafer scale CIS assembling structure and manufacturing approach thereof, technical problem to be solved are provided is to make it utilize silicon guide hole wafer as Silicon Wafer, is compared to traditional die size level packaging technology or COB technology; CIS assembling structure of the present invention need not use metal bonding wire and substrate; So the size that can dwindle the CIS assembling structure, and can reduce its structure dress height, be very suitable for practicality.
Another object of the present invention is to; Overcome the defective that existing wafer scale CIS assembling structure and manufacturing approach thereof exist; And a kind of new wafer scale CIS assembling structure and manufacturing approach thereof are provided; Technical problem to be solved is overlying on around the light-passing board its lighttight packaging adhesive material wrapper capable of using; Avoiding producing the problem of side light leakage during image sensor module, and can need not to use light shield or extra again coating light shield layer, thereby be suitable for practicality more in assembling.
A purpose again of the present invention system is; Overcome the defective that existing wafer scale CIS assembling structure and manufacturing approach thereof exist, and a kind of new wafer scale CIS assembling structure and manufacturing approach thereof are provided, technical problem to be solved is to make it utilize silicon guide hole wafer as Silicon Wafer; Need not use metal bonding wire and substrate; Be compared to the traditional manufacturing technique material and more save, and can make in a large number, so that cost reduces; Manufacturing process reduces and then production efficiency improves, thereby is suitable for practicality more.
The object of the invention and solve its technical problem and adopt following technical scheme to realize.The manufacturing approach of a kind of wafer scale CIS assembling structure that proposes according to the present invention, it comprises the following steps: to provide a Silicon Wafer, and it has a plurality of image sensing chips, and each this image sensing chip has a photosensitive area; A plurality of light-passing boards are provided; Distribute this light-passing board correspondence to be arranged at this photosensitive area top of this image sensing chip; And carry out a packaging technology, utilize a packaging adhesive material to be arranged on the first surface of this Silicon Wafer, and make this packaging adhesive material coat those light-passing boards around.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
The manufacturing approach of aforesaid wafer scale CIS assembling structure; Wherein said Silicon Wafer is a silicon guide hole (Through-Silicon Vias; TSV) wafer, a second surface of this silicon guide hole wafer is formed with wiring layer again and again, and is formed with a plurality of ball pad of planting at this second surface.
The manufacturing approach of aforesaid wafer scale CIS assembling structure, wherein those light-passing boards are to be formed by light penetrating panel cutting.
The manufacturing approach of aforesaid wafer scale CIS assembling structure; Wherein those light-passing boards are to be formed by light penetrating panel cutting; And before this light penetrating panel of cutting, form earlier a plurality of ridge shape frameworks behind this light penetrating panel, again this light penetrating panel of line of cut cutting on those ridge shape frameworks; So that each this light-passing board around all have a support frame and be adhered to this image sensing chip by this support frame, and make this support frame outside around this photosensitive area.
The manufacturing approach of aforesaid wafer scale CIS assembling structure, wherein those ridge shape frameworks are to form by a screen printing technology, a transfer shaping technology or a jetting formation process to form.
The manufacturing approach of aforesaid wafer scale CIS assembling structure, wherein carry out this packaging technology comprise the following steps: to place have those light-passing boards this Silicon Wafer in a mould; Inject the die cavity of this packaging adhesive material in this mould so that this packaging adhesive material coat those light-passing boards around, but not exclusively cover one the 3rd surface of those light-passing boards, this packaging adhesive material is a moulding sealing; And behind this packaging adhesive material of transfer formation, die sinking is also carried out the back baking process to solidify this packaging adhesive material.
The manufacturing approach of aforesaid wafer scale CIS assembling structure, wherein said mould comprise a mold and a bed die, and wherein this mold resists the 3rd surface of those light-passing boards, and this bed die then resists a second surface of this Silicon Wafer.
The manufacturing approach of aforesaid wafer scale CIS assembling structure; Wherein said mould comprises a mold and a bed die; Wherein this mold has a plurality of flanges; Each this flange all resists the middle body on the 3rd surface of this light-passing board, and this bed die then resists a second surface of this Silicon Wafer.
The manufacturing approach of aforesaid wafer scale CIS assembling structure, wherein said mold have a resilient coating of the vacuum suction utilized to resist those the 3rd surfaces.
The manufacturing approach of aforesaid wafer scale CIS assembling structure is wherein carried out this packaging technology and is comprised the following steps: to be provided with the edge of a ponding in this first surface, and forms a circulus; And be coated with this packaging adhesive material in this ponding, and make this packaging adhesive material coat those light-passing boards around, but do not cover one the 3rd surface of those light-passing boards, this packaging adhesive material is a liquid sealing.
The manufacturing approach of aforesaid wafer scale CIS assembling structure further comprises the following steps: to plant soldered ball at a second surface cloth of this Silicon Wafer behind those light-passing boards of encapsulation; And cut this Silicon Wafer, to form a plurality of CIS assembling structures.
The object of the invention and solve its technical problem and also adopt following technical scheme to realize.According to a kind of wafer scale CIS assembling structure that the present invention proposes, it comprises: an image sensing chip, and it has: a plurality of photo-sensitive cells are arranged on the photosensitive area of a first surface of this image sensing chip; A plurality of first conductive junction points, it is arranged at this first surface and is electrically connected at those photo-sensitive cells, and is compassingly set at the outside of this photosensitive area; At least one conductive channel penetrates this image sensing chip and one of which end and is electrically connected at those first conductive junction points; And a plurality of ball pad of planting, be arranged at a second surface of this image sensing chip, and be electrically connected at this conductive channel; One light-passing board, its correspondence are arranged at this photosensitive area top, and and this image sensing chip between be formed with an air chamber; And a packaging adhesive material, it is arranged on this first surface, and coat this light-passing board around.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
Aforesaid wafer scale CIS assembling structure, wherein said image sensing chip further comprises a BGA, is to be arranged at this second surface, and is electrically connected at those and plants ball pad to electrically connect with this conductive channel.
Aforesaid wafer scale CIS assembling structure; Wherein said light-passing board has one the 3rd surface and one the 4th surface; And the edge on the 4th surface has a support frame, and wherein this light-passing board is to be adhered to this first surface by this support frame, and makes all around outside of this support frame around this photosensitive area; This packaging adhesive material then coat this light-passing board and this support frame around, the material of this support frame is a resin material or a plastic material.
Aforesaid wafer scale CIS assembling structure, wherein said packaging adhesive material further extend the edge on one the 3rd surface that is coated on this light-passing board.
Aforesaid wafer scale CIS assembling structure, wherein said packaging adhesive material are a moulding sealing (mold compound) or a liquid sealing (liquid compound).
Aforesaid wafer scale CIS assembling structure, wherein said packaging adhesive material further extend the edge on one the 3rd surface that is coated on this light-passing board.
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, wafer scale CIS assembling structure of the present invention and manufacturing approach thereof have advantage and beneficial effect at least:
One, manufacturing process of the present invention is more simple than encapsulation of traditional die size level or COB technology, and CIS assembling structure dimension shrinks, assembling structure height are reduced, to meet the compact trend of electronic component.
Two, the present invention utilize lighttight packaging adhesive material coat light-passing board around, can make the CIS assembling structure not have the problem of side light leakage.
Three, the whole materials of the present invention are more saved, and can make in a large number, reduced manufacturing cost, improved production efficiency.
In sum, the invention relates to a kind of wafer scale CIS assembling structure and manufacturing approach thereof.Wherein this manufacturing approach comprises the following steps: to provide the Silicon Wafer with image sensing chip; A plurality of light-passing boards are provided; Distribute the light-passing board correspondence to be arranged at the photosensitive area top of image sensing chip; And carry out packaging technology.Manufacturing approach of the present invention has manufacture craft simplification, low cost of manufacture and the high advantage of product yield; And by packaging adhesive material be arranged at the first surface of image sensing chip and be coated on light-passing board around; Can encapsulate (CSP) side light leakage problem that mode took place in order to avoid traditional die size level, and then improve the image sensing usefulness of wafer scale CIS assembling structure.The present invention has obvious improvement technically, and has tangible good effect, really is the new design of a novelty, progress, practicality.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Fig. 1 is the flow chart of embodiment of the manufacturing approach of a kind of wafer scale CIS assembling structure of the present invention.
Fig. 2 is the sketch map of the embodiment of a kind of Silicon Wafer with image sensing chip of the present invention.
Fig. 3 is the sketch map of the embodiment of a kind of light-passing board of the present invention.
Fig. 4 A is the schematic top plan view of the embodiment of a kind of light-passing board with ridge shape framework of the present invention.
Fig. 4 B is the schematic perspective view of the embodiment of a kind of light-passing board with ridge shape framework of the present invention.
Fig. 5 A is the schematic top plan view of the embodiment of a kind of Silicon Wafer with light-passing board of the present invention.
Fig. 5 B is the sketch map that a kind of light-passing board contraposition of the present invention is attached at the embodiment of image sensing chip.
Fig. 6 A is the decomposing schematic representation that a kind of Silicon Wafer of the present invention is positioned over the embodiment in the mould.
Fig. 6 B is the generalized section that a kind of Silicon Wafer of the present invention is positioned over the embodiment in the mould.
Fig. 6 C is the generalized section that another kind of Silicon Wafer of the present invention is positioned over the embodiment in the mould.
Fig. 7 A is the schematic top plan view of the embodiment of a kind of Silicon Wafer that is packaged with packaging adhesive material of the present invention.
Fig. 7 B is the cross-sectional schematic along the A-A hatching line of embodiment among Fig. 7 A.
Fig. 8 A is the schematic top plan view of the embodiment of the another kind of the present invention Silicon Wafer that is packaged with packaging adhesive material.
Fig. 8 B is the cross-sectional schematic along the B-B hatching line of embodiment among Fig. 8 A.
Fig. 9 is the schematic top plan view of the embodiment of a kind of Silicon Wafer with ponding of the present invention.
Figure 10 A is a kind of schematic top plan view of embodiment that has ponding and be packaged with the Silicon Wafer of packaging adhesive material of the present invention.
Figure 10 B is the vertical cross-sectional schematic along the C-C hatching line of embodiment among Figure 10 A.
Figure 11 is the sketch map of the embodiment of a kind of Silicon Wafer that is provided with BGA of the present invention.
Figure 12 A to Figure 14 B is respectively the sketch map of the embodiment of a kind of CIS assembling structure of the present invention.
10: Silicon Wafer 11: image sensing chip
12: photosensitive area 13: first surface
14: second surface 15: photo-sensitive cell
18: conductive channel 20: light-passing board
21: light penetrating panel 22: carry glued membrane
23: framework 24: support frame
25: 26: the three surfaces of ridge shape framework
27: the four surfaces 30: plant ball pad
40a, 40b: line of cut 50: mould
51,51a: mold 51b: flange
52: bed die 53: resilient coating
60: packaging adhesive material 70: ponding
80: BGA 81: soldered ball
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To wafer scale CIS assembling structure and its embodiment of manufacturing approach, structure, method, step, characteristic and the effect thereof that proposes according to the present invention, specify as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can be known to appear in the following detailed description that cooperates with reference to graphic preferred embodiment.Through the explanation of embodiment, when can being to reach technological means that predetermined purpose takes and effect to obtain one more deeply and concrete understanding to the present invention, yet the appended graphic usefulness that only provides reference and explanation be not to be used for the present invention is limited.
Fig. 1 is the flow chart of embodiment of the manufacturing approach of a kind of wafer scale CIS assembling structure of the present invention.Fig. 2 is the sketch map of the embodiment of a kind of Silicon Wafer with image sensing chip of the present invention.Fig. 3 is the sketch map of the embodiment of a kind of light-passing board of the present invention.Fig. 4 A is the schematic top plan view of the embodiment of a kind of light-passing board with ridge shape framework of the present invention.Fig. 4 B is the schematic perspective view of the embodiment of a kind of light-passing board with ridge shape framework of the present invention.Fig. 5 A is the schematic top plan view of the embodiment of a kind of Silicon Wafer with light-passing board of the present invention.Fig. 5 B is the sketch map that a kind of light-passing board contraposition of the present invention is attached at the embodiment of image sensing chip.
Fig. 6 A is the decomposing schematic representation that a kind of Silicon Wafer of the present invention is positioned over the embodiment in the mould.Fig. 6 B is the anti-generalized section that places the embodiment in the mould of a kind of Silicon Wafer of the present invention.Fig. 6 C is the anti-generalized section that places the embodiment in the mould of another kind of Silicon Wafer of the present invention.Fig. 7 A is the schematic top plan view of the embodiment of a kind of Silicon Wafer that is packaged with packaging adhesive material of the present invention.Fig. 7 B is the cross-sectional schematic along the A-A hatching line of embodiment among Fig. 7 A.Fig. 8 A is the schematic top plan view of the embodiment of the another kind of the present invention Silicon Wafer that is packaged with packaging adhesive material.Fig. 8 B is the cross-sectional schematic along the B-B hatching line of embodiment among Fig. 8 A.
Figure the 9th is the schematic top plan view of the embodiment of a kind of Silicon Wafer with ponding of the present invention.Figure 10 A is a kind of schematic top plan view with embodiment of ponding and Silicon Wafer that be packaged with packaging adhesive material of the present invention.Figure 10 B is the vertical cross-sectional schematic along the C-C line of embodiment among Figure 10 A.Figure 11 is the sketch map of the embodiment of a kind of Silicon Wafer that is provided with BGA of the present invention.Figure 12 A to Figure 14 B is respectively the sketch map of the embodiment of a kind of CIS assembling structure of the present invention.
As shown in Figure 1, the manufacturing approach of a kind of wafer scale CIS assembling structure of preferred embodiment of the present invention, it comprises the following steps: to provide a Silicon Wafer (S10); A plurality of light-passing boards (S20) are provided; Distribute a light-passing board correspondence to be arranged at the photosensitive area top (S30) of an image sensing chip; And carry out a packaging technology (S40).
One Silicon Wafer (S10) is provided: as shown in Figure 2, have a plurality of image sensing chips 11 on the Silicon Wafer 10, and each image sensing chip 11 has a photosensitive area 12.
Illustrate further, Silicon Wafer 10 can be silicon guide hole (Through-Silicon Vias, TSV) wafer.Please consult shown in Figure 12 A simultaneously; Behind the cutting silicon guide hole wafer; Can silicon guide hole wafer be subdivided into a plurality of image sensing chips 11; And image sensing chip 11 has a first surface 13 and a second surface 14, and first surface 13 and second surface 14 equally also are the first surface 13 and the second surface 14 of Silicon Wafer 10.
The sectional structure of silicon guide hole wafer is for example shown in Figure 12 A; It is by on crystal circle structure, forming guide hole; And conductive channel 18 is set in guide hole; First conductive junction point 16 with on the first surface 13 that utilizes conductive channel 18 and Silicon Wafer 10 electrically connects, and the also extensible second surface 14 that is arranged at of conductive channel 18.
Can form again and again wiring layer (Re-distribution Layer) (figure does not show) at second surface 14 again; And again wiring layer can with form grid array (Land Grid Array; LGA) ball pad 30 of planting of form electrically connects, to arrange the spacing of planting 30 of ball pad by wiring layer again.
A plurality of light-passing boards (S20) are provided: as shown in Figure 3, light-passing board 20 can be formed by a light penetrating panel 21 cuttings, and light penetrating panel 21 is to be positioned over one to carry on the glued membrane 22, carries the periphery that is placed with a framework 23 on the glued membrane 22 and is surrounded on light penetrating panel 21.Location when this framework 23 can help cutting light penetrating panel 21 in the manufacture craft.
Shown in Fig. 4 A and Fig. 4 B; Can take a step forward in cutting on the light penetrating panel 21 and form a plurality of ridge shape frameworks 25; Line of cut 40a on the ridge shape framework 25 cutting light penetrating panel 21 again so that each light-passing board 20 after the cutting around all have a support frame 24 (please consulting simultaneously shown in Fig. 5 B).Wherein, ridge shape framework 25 can form by a screen printing technology, a transfer shaping technology or a jetting formation process and form.
Distribute a light-passing board correspondence to be arranged at the photosensitive area top (S30) of an image sensing chip: shown in Fig. 5 A and Fig. 5 B, each light-passing board 20 correspondence is arranged at photosensitive area 12 tops of image sensing chip 11.Please consult simultaneously shown in Figure 12 A, Figure 13 A and Figure 14 A; Light-passing board 20 has 26 and 1 the 4th surface 27, one the 3rd surface; And can on first surface 13, be coated with sticker with respect to the 4th surperficial 27 edges; So that light-passing board 20 can be adhered to image sensing chip 11, and be arranged at photosensitive area 12 tops and and 11 of image sensing chips form an air chamber 17.
And for example shown in Fig. 5 B, the light-passing board 20 with support frame 24 can attach by support frame 24 contrapositions and be adhered to image sensing chip 11, and makes all around outside of support frame 24 around photosensitive area 12.
Carry out a packaging technology (S40): shown in Fig. 7 B, Fig. 8 B and Figure 10 B, utilize a packaging adhesive material 60 to be arranged on the first surface 13 of Silicon Wafer 10, and make packaging adhesive material 60 coat light-passing boards 20 around.Because packaging adhesive material 60 can be a light-proof material,, can avoid taking place the problem of side light leakage so the CIS assembling structure need not extra installing light shield or coating light shield layer again.
To disclose mould model (molding) and two kinds of packaging technologies of some glue (dispensing) in the present embodiment.
Below the packaging technology of mould model is carried out in narration, and the packaging adhesive material 60 that in the packaging technology of mould model, uses can be a moulding sealing (mold compound).
Shown in Fig. 6 A and Fig. 6 B, the Silicon Wafer 10 that placement has light-passing board 20 is in a mould 50, and mould 50 comprises a mold 51 and a bed die 52.Wherein, mold 51 is in order to resist the 3rd surface 26 of light-passing board 20, and bed die 52 is then in order to carry the second surface 14 that Silicon Wafer 10 also resists Silicon Wafer 10.
In addition; Can further comprise a resilient coating 53 that utilizes vacuum suction on the inner surface of mold 51; Resilient coating 53 is directly to apply pressure on the light-passing board 20; Pollute because of the glue that overflows on the 3rd of light-passing board 20 the surface 26 when avoiding injecting packaging adhesive material, so be arranged between light-passing board 20 and the mold 51, prevents the pollution that excessive glue causes in order to prop up the 3rd surperficial 26 of light-passing board 20.
And for example shown in Fig. 6 C, can coat to the edge on the 3rd surface 26 in order to make packaging adhesive material 60, but not exclusively cover the 3rd surface 26, can change and use another kind of mold 51a structure.Wherein, Mold 51a has a plurality of flange 51b; Each flange 51b all resists the 3rd surface 26 middle body, and the resilient coating 53 that between mold 51a and light-passing board 20, has the vacuum suction utilized equally is the 3rd surperficial 26 to resist, in order to prevent excessive glue pollution.
After the Silicon Wafer 10 that will have a light-passing board 20 is inserted mould 50, can carry out packaging technology.Packaging technology is to make mold 51 and bed die 52 closely paste light-passing board 20 and Silicon Wafer 10 by vacuum suction earlier, and and Silicon Wafer 10 and 20 formation of light-passing board, one die cavity (please consulting simultaneously shown in Fig. 6 B).Packaging adhesive material 60 is flow in the die cavity; Can make packaging adhesive material 60 coat light-passing boards 20 around; But not exclusively cover the 3rd surface 26 (shown in Fig. 6 B) of light-passing board 20, or only cover, and be principle not cover photosensitive area 12 to 26 edge (shown in Fig. 6 C), the 3rd surface.
Can add press fit so that behind packaging adhesive material 60 transfer formations by mould 50, die sinking is carried out the back baking process with cure package glue material 60 again.Shown in Fig. 7 A and Fig. 7 B, it is mould 50 die sinkings among Fig. 6 B and carries out behind the baking process of back and the CIS assembling structure before cutting.Can be to coat around the light-passing board 20 but do not cover to the 3rd surface 26 by the clear packaging adhesive material 60 of learning of the cutaway view of Fig. 7 B.
Fig. 8 A and Fig. 8 B then are mould 50 die sinkings among Fig. 6 C and carry out behind the baking process of back and the CIS assembling structure before cutting.Wherein, the edge on the 3rd surface 26, packaging adhesive material 60 cover parts is so the area of being seen light-passing board 20 is less in Fig. 8 A.
In addition; See also shown in Fig. 9 and Figure 10 A; The packaging technology of some glue encapsulation can be by the edge of a ponding 70 in the first surface 13 of Silicon Wafer 10 is set; Form a circulus with periphery, and then the image sensing chip 11 that is provided with light-passing board 20 all is enclosed in the ponding 70 formed circuluses at Silicon Wafer 10.Wherein, ponding 70 can be epoxy resin (Epoxy), and the height of ponding 70 need be equivalent to or less than the total height that light-passing board 20 is assembled in image sensing chip 11 back CIS assembling structures.
Please consult shown in Figure 10 B again; By dispensing technology packaging adhesive material 60 is coated on the first surface 13; And make packaging adhesive material 60 fill up between ponding 70 and the light-passing board 20; And packaging adhesive material 60 use amounts highly are principle to be no more than light-passing board 20, are coated on around the light-passing board 20 to guarantee packaging adhesive material 60, but do not cover the 3rd surface 26 (shown in Figure 10 B) to light-passing board 20.Wherein, employed packaging adhesive material 60 is liquid sealing (liquid compound).
Shown in figure 11; After accomplishing packaging technology; Turning Silicon Wafer 10 and on second surface 14 cloth plant soldered ball 81; And soldered ball 81 is implanted in plant on the ball pad 30, and be arranged in array format to form a BGA 80, make whereby image sensing chip 11 can be via first conductive junction point 16, conductive channel 18, plant ball pad 30 and soldered ball 81 electrically connects with external device (ED) (like circuit substrate).At last, can be along line of cut 40b cutting silicon crystal circle 10, to obtain a plurality of CIS assembling structures.
CIS assembling structure after the cutting is then for example shown in Figure 12 A, Figure 12 B, Figure 13 A, Figure 13 B, Figure 14 A and Figure 14 B.In sum, the CIS assembling structure of the manufacturing approach manufacturing of the above-mentioned CIS assembling structure of process can be divided into six kinds of examples generally.
Wherein, wafer scale CIS assembling structure system comprises: an image sensing chip 11; One light-passing board 20; An and packaging adhesive material 60.
Wherein, image sensing chip 11 has a first surface 13 and a second surface 14, and it is respectively the upper surface and the lower surface of image sensing chip 11.First surface 13 is provided with a plurality of photo-sensitive cells 15, and photo-sensitive cell 15 is to be arranged in array and to be arranged in the photosensitive area 12 on the first surface 13, and then in order to light sensing.
And on the second surface 14 of image sensing chip 11 further cloth plant soldered ball 81, and be electrically connected at and plant ball pad 30, on second surface 14, to form a BGA 80 (please consulting Figure 11 simultaneously).Soldered ball 81 not only is electrically connected at plants ball pad 30, and electrically connects with conductive channel 18 through planting ball pad 30, therefore can be used as photo-sensitive cell 15 and the extraneous interface that electrically connects.
Shown in Figure 12 A, Figure 13 A and Figure 14 A, light-passing board 20 is that correspondence is arranged at photosensitive area 12 tops and is adhered on the first surface 13, and and 11 of image sensing chips be formed with an air chamber 17.
And for example shown in Figure 12 B, Figure 13 B and Figure 14 B; Light-passing board 20 has the 26 and the 4th surface 27, the 3rd surface; And can further support frame 24 be set in the edge on the 4th surface 27; Making light-passing board 20 can be adhered to first surface 13, and make support frame 24 outside around the photosensitive area 12 by support frame 24.Wherein, the material of support frame 24 can be a resin material or a plastic material.
Shown in Figure 12 A, Figure 12 B, Figure 14 A and Figure 14 B; Packaging adhesive material 60 is to be arranged on the first surface 13; And coat light-passing board 20 and support frame 24 around (shown in Figure 12 B, Figure 13 B and Figure 14 B); And packaging adhesive material 60 can be lighttight material, in order to preventing the side incident of light by light-passing board 20, and then reduces the noise that stray light caused.In addition, shown in Figure 13 A and Figure 13 B, packaging adhesive material 60 can further extend the edge on the 3rd surface 26 that is coated on light-passing board 20, but can not cover in photosensitive area 12, further to cover the light by light-passing board 20 side incidents again.Wherein, packaging adhesive material 60 can be a moulding sealing (mold compound) or a liquid sealing (liquid compound).
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the method for above-mentioned announcement capable of using and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations; In every case be the content that does not break away from technical scheme of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (17)
1. the manufacturing approach of a wafer scale CIS assembling structure is characterized in that it comprises the following steps:
One Silicon Wafer is provided, and it has a plurality of image sensing chips, and each this image sensing chip has a photosensitive area;
A plurality of light-passing boards are provided;
Distribute this light-passing board correspondence to be arranged at this photosensitive area top of this image sensing chip; And
Carry out a packaging technology, utilize a packaging adhesive material to be arranged on the first surface of this Silicon Wafer, and make this packaging adhesive material coat those light-passing boards around.
2. the manufacturing approach of wafer scale CIS assembling structure according to claim 1; It is characterized in that wherein said Silicon Wafer is a silicon guide hole wafer; One second surface of this silicon guide hole wafer is formed with wiring layer again and again, and is formed with a plurality of ball pad of planting at this second surface.
3. the manufacturing approach of wafer scale CIS assembling structure according to claim 1 is characterized in that wherein those light-passing boards are to be formed by light penetrating panel cutting.
4. the manufacturing approach of wafer scale encapsulation structure for image sensor according to claim 1; It is characterized in that wherein those light-passing boards are to be formed by light penetrating panel cutting; And before this light penetrating panel of cutting; Form earlier a plurality of ridge shape frameworks behind this light penetrating panel, this light penetrating panel of line of cut cutting on those ridge shape frameworks again so that each this light-passing board around all have a support frame; Be adhered to this image sensing chip by this support frame, and make all around outside of this support frame around this photosensitive area.
5. the manufacturing approach of wafer scale CIS assembling structure according to claim 4 is characterized in that wherein those ridge shape frameworks are to form by a screen printing technology, a transfer shaping technology or a jetting formation process to form.
6. the manufacturing approach of wafer scale CIS assembling structure according to claim 1 is characterized in that wherein carrying out this packaging technology comprises the following steps:
Placement has this Silicon Wafer of those light-passing boards in a mould;
Inject the die cavity of this packaging adhesive material in this mould so that this packaging adhesive material coat those light-passing boards around, but not exclusively cover one the 3rd surface of those light-passing boards, this packaging adhesive material is a moulding sealing; And
Behind this packaging adhesive material of transfer formation, die sinking is also carried out the back baking process to solidify this packaging adhesive material.
7. the manufacturing approach of wafer scale CIS assembling structure according to claim 6; It is characterized in that wherein said mould comprises a mold and a bed die; Wherein this mold resists the 3rd surface of those light-passing boards, and this bed die then resists a second surface of this Silicon Wafer.
8. the manufacturing approach of wafer scale CIS assembling structure according to claim 6; It is characterized in that wherein said mould comprises a mold and a bed die; Wherein this mold has a plurality of flanges; Each this flange all resists the middle body on the 3rd surface of this light-passing board, and this bed die then resists a second surface of this Silicon Wafer.
9. according to the manufacturing approach of claim 7 or 8 described wafer scale CIS assembling structures, it is characterized in that a resilient coating that wherein said mold has the vacuum suction utilized is to resist those the 3rd surfaces.
10. the manufacturing approach of wafer scale CIS assembling structure according to claim 1 is characterized in that wherein carrying out this packaging technology comprises the following steps:
The edge of one ponding in this first surface is set, and forms a circulus; And
Be coated with this packaging adhesive material in this ponding, and make this packaging adhesive material coat those light-passing boards around, but do not cover one the 3rd surface of those light-passing boards.
11. the manufacturing approach of wafer scale CIS assembling structure according to claim 1 is characterized in that behind those light-passing boards of encapsulation, further comprising the following steps:
Second surface cloth at this Silicon Wafer is planted soldered ball; And
Cut this Silicon Wafer, to form a plurality of CIS assembling structures.
12. a wafer scale CIS assembling structure is characterized in that it comprises:
One image sensing chip, it has: a plurality of photo-sensitive cells are arranged on the photosensitive area of a first surface of this image sensing chip; A plurality of first conductive junction points, it is arranged at this first surface and is electrically connected at those photo-sensitive cells, and is compassingly set at the outside of this photosensitive area; At least one conductive channel penetrates this image sensing chip and one of which end and is electrically connected at those first conductive junction points; And a plurality of ball pad of planting, be arranged at a second surface of this image sensing chip, and be electrically connected at this conductive channel;
One light-passing board, its correspondence are arranged at this photosensitive area top, and and this image sensing chip between be formed with an air chamber; And
One packaging adhesive material, it is arranged on this first surface, and coat this light-passing board around.
13. wafer scale CIS assembling structure according to claim 12; It is characterized in that wherein said image sensing chip further comprises a BGA; Be to be arranged at this second surface, and be electrically connected at those and plant ball pad to electrically connect with this conductive channel.
14. wafer scale CIS assembling structure according to claim 12; It is characterized in that wherein said light-passing board has one the 3rd surface and one the 4th surface; And the edge on the 4th surface has a support frame; Wherein this light-passing board is to be adhered to this first surface by this support frame; And make this support frame around this photosensitive area around the outside, this packaging adhesive material then coat this light-passing board and this support frame around, the material of this support frame is a resin material or a plastic material.
15. wafer scale CIS assembling structure according to claim 14 is characterized in that wherein said packaging adhesive material further extends the edge on one the 3rd surface that is coated on this light-passing board.
16. wafer scale CIS assembling structure according to claim 12 is characterized in that wherein said packaging adhesive material is a moulding sealing or a liquid sealing.
17. wafer scale CIS assembling structure according to claim 12 is characterized in that wherein said packaging adhesive material further extends the edge on one the 3rd surface that is coated on this light-passing board.
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