CN102391014A - Active substrate with surface enhanced Raman scattering effect - Google Patents

Active substrate with surface enhanced Raman scattering effect Download PDF

Info

Publication number
CN102391014A
CN102391014A CN2011102312983A CN201110231298A CN102391014A CN 102391014 A CN102391014 A CN 102391014A CN 2011102312983 A CN2011102312983 A CN 2011102312983A CN 201110231298 A CN201110231298 A CN 201110231298A CN 102391014 A CN102391014 A CN 102391014A
Authority
CN
China
Prior art keywords
active
reaktionsofen
column array
raman scattering
scattering effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011102312983A
Other languages
Chinese (zh)
Other versions
CN102391014B (en
Inventor
姜卫粉
高海燕
张天杰
杨晓辉
张巧丽
贾敏
吕健
蔡洪涛
凌红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North China University of Water Resources and Electric Power
Original Assignee
North China University of Water Resources and Electric Power
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North China University of Water Resources and Electric Power filed Critical North China University of Water Resources and Electric Power
Priority to CN 201110231298 priority Critical patent/CN102391014B/en
Publication of CN102391014A publication Critical patent/CN102391014A/en
Application granted granted Critical
Publication of CN102391014B publication Critical patent/CN102391014B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses an active substrate with a surface enhanced Raman scattering effect, and simultaneously discloses a preparation method and application of the active substrate. The preparation method of the active substrate comprises the steps of: firstly performing hydrothermal corrosion on a P-type monocrystalline silicon wafer to obtain a silicon nano-porous column array, and then performing chemical vapor deposition on the surface of the silicon nano-porous column array to grow carbon nanoparticles so as to prepare a carbon nanoparticle membrane/silicon nano-porous column array active substrate. By adopting the carbon nanoparticle membrane/silicon nano-porous column array active substrate as the active substrate with the surface enhanced Raman scattering effect, rhodamine 6G molecules with the concentration of 10<-6>mol/L can be detected, and the active substrate has the extremely strong Raman enhanced effect.

Description

Have at the bottom of the active group of surface enhanced Raman scattering effect
Technical field
The present invention relates to have the material technology field of surface enhanced Raman scattering effect, be specifically related to also relate to its preparation method and application simultaneously at the bottom of a kind of active group with surface enhanced Raman scattering effect.
Background technology
Raman spectrum belongs to molecular vibration spectrum, can reflect the feature structure of molecule.But because the light intensity of Raman scattering effect only is about 10 of incident intensity -10So, when surperficial adsorbent is carried out raman study, all to utilize certain reinforcing effect.(Surface Enhanced Raman Scattering SERS) is a kind of reinforcing effect with surface selectivity to surface enhanced Raman scattering, can the Raman signal of the molecule that is adsorbed on material surface be amplified 10 6To 10 14Doubly, the structure and the process that deeply characterize various surfaces or interface (like various solid-liquids, solid-gas, solid-solid interface) for people provide the information on the molecular level, are the strong instruments of research surface physics, chemical structure and character.Can the important factor in order strong and weak with the SERS signal take place because the adsorbed substrate surface form of molecule is the SERS effect, so the bearing basement of molecule is very crucial, thereby the research at the bottom of the SERS active group be one of this hot research fields always.Wherein, gold and silver, three types of noble metal nano systems of copper be always study the hottest, maximum, strengthen the most significantly at the bottom of the SERS active group.Minority basic metal such as lithium, sodium also have stronger SERS effect.Part transition metal such as iron, cobalt and nickel have also been found the SERS effect.But above-mentioned metal nano material is extremely unstable in air except that gold and silver, copper, and the research of SERS research being widened gold and silver, copper material system does not in addition obtain the progress of practical significance for a long time.If the raman active substrate with permanent stability that can adopt simple method to prepare beyond the metals such as gold and silver, copper will have great importance to the Application Areas of widening SERS, also possibly become the opportunity that the SERS theoretical investigation obtains substantial progress simultaneously.
Summary of the invention
The object of the present invention is to provide at the bottom of a kind of active group with surface enhanced Raman scattering effect.
Simultaneously, the present invention also aims to provide preparation method at the bottom of a kind of active group with surface enhanced Raman scattering effect.
The present invention also aims to provide the application at the bottom of a kind of active group with surface enhanced Raman scattering effect.
In order to realize above purpose, the technical scheme that the present invention adopted is: at the bottom of a kind of active group with surface enhanced Raman scattering effect, prepared by the method that may further comprise the steps at the bottom of this active group:
(1) resistivity is inserted in the autoclave less than the p type single crystal silicon sheet of 3.0 Ω cm, in autoclave, filled corrosive fluid afterwards, said p type single crystal silicon sheet corroded 30~60 minutes down in 100~200 ℃ in corrosive fluid, prepared silicon nano hole column array;
(2) silicon nano hole column array is placed in the Reaktionsofen; Then under the shielding gas nitrogen atmosphere in the Reaktionsofen temperature rise to 700 ℃~1200 ℃, stop afterwards in Reaktionsofen, feeding shielding gas, change into and in Reaktionsofen, feed carrier gas; Carrier gas is the mixed gas of nitrogen and hydrogen; Carrier gas brings to carbon source YLENE in the Reaktionsofen with 0.1~0.8 ml/min, under 700 ℃~1200 ℃, carries out the chemical vapor deposition growth carbon nano-particle on the silicon nano hole column array surface, and the reaction times is 5~15 minutes; Afterwards again under the shielding gas nitrogen atmosphere with Reaktionsofen in temperature reduce to room temperature; Obtain one deck carbon nano-particle in the silicon nano hole column array surface growth this moment, promptly generates one deck carbon nano-particle rete on the silicon nano hole column array surface, obtains at the bottom of carbon nano-particle film/silicon nano hole column array active group.
Further, said corrosive fluid is that the hydrofluoric acid of 8.00~15.00 mol/l and iron nitrate aqueous solution that concentration is 0.02~0.08 mol/l are formed by concentration.The volume compactedness of said corrosive fluid in autoclave is 60~90%.
Said Reaktionsofen is the horizontal pipe stove.
Application at the bottom of the above-mentioned active group with surface enhanced Raman scattering effect divides the period of the day from 11 p.m. to 1 a.m being used for detecting the solution rhodamine 6G at the bottom of the said active group, can detect that concentration is 10 in the solution -6The rhodamine 6G molecule of mol/L.
Adopt the detection method that detects rhodamine 6G molecule in the solution at the bottom of the said active group to be: with inserting 10 at the bottom of the said active group -6Soak 30 min in the rhodamine 6G aqueous solution of mol/L, take out, under air conditions, dry, do the Raman spectrum test afterwards.The test condition of Raman spectrum test is: the employing wavelength is that the green glow of 532nm is made light source, 20 seconds time shutter, scan 2 times, and the wave number sweep limit is 400cm -1~1800cm -1
Adopting at the bottom of carbon nano-particle film provided by the invention/silicon nano hole column array active group as having detected concentration respectively at the bottom of the active group with surface enhanced Raman scattering effect is 10 -4Mol/L~10 -6The rhodamine 6G molecule of mol/L, the result shows, has demonstrated extremely strong Raman reinforcing effect at the bottom of this active group, concentration is 10 -6The raman characteristic peak of the rhodamine 6G molecule of mol/L is high-visible.Surface enhanced Raman scattering effect ability at the bottom of carbon nano-particle film provided by the invention/silicon nano hole column array active group can with gold, the comparing favourably of copper nano material, even be superior to the surface enhanced Raman scattering ability of gold and copper nano material.
Do not use any metal that comprises gold and silver, copper coin kind metal at the bottom of carbon nano-particle film provided by the invention/silicon nano hole column array active group in the preparation; Cost is low; And nontoxic, stable performance can be deposited the long period naturally and the change of performance not taken place in air.In addition, have also that preparation technology is simple, repetition rate is high, advantages of wide application range.Develop technical fields such as Single Molecule Detection, chemistry and industry, biomolecules, archaeology in future at the bottom of carbon nano-particle film/silicon nano hole column array active group and all have the potential application prospect.
Description of drawings
Fig. 1 (a) is the stereoscan photograph of the silicon nano hole column array substrate that makes in the embodiment of the invention 1;
Fig. 1 (b) is the stereoscan photograph of carbon nano-particle film/silicon nano hole column array of making in the embodiment of the invention 1;
Fig. 2 is the transmission electron microscope photo of the carbon nano-particle on the carbon nano-particle film/silicon nano hole column array that makes in the embodiment of the invention 1;
Fig. 3 is the Raman spectrogram of carbon nano-particle film/silicon nano hole column array of making in the embodiment of the invention 1;
Fig. 4 is in the Test Example, with carbon nano-particle film/silicon nano hole column array of making in the embodiment of the invention 1 as raman active substrate, to different concns (10 -4Mol/L, 10 -5Mol/L, 10 -6Mol/L) the rhodamine 6G molecule in the rhodamine 6G aqueous solution detects the Raman spectrogram that obtains.
Embodiment
Embodiment 1
At the bottom of preparation carbon nano-particle film/silicon nano hole column array active group, step is following:
(1) resistivity is inserted in the autoclave less than the p type single crystal silicon sheet of 3.0 Ω cm; In autoclave, fill corrosive fluid afterwards; Corrosive fluid is the corrosive fluid that the hydrofluoric acid of 8.00mol/l and iron nitrate aqueous solution that concentration is 0.08 mol/l are formed by concentration, and the liquor capacity compactedness in the autoclave is 90%, 100 ℃ of corrosion 60 minutes down; Prepare the substrate material silicon nano hole column array, its stereoscan photograph is seen shown in Fig. 1 (a);
(2) silicon nano hole column array that step (1) is made places in the horizontal pipe stove; Then under nitrogen atmosphere in the Reaktionsofen temperature rise to 700 ℃; Stop afterwards in the horizontal pipe stove, feeding nitrogen; Change in the horizontal pipe stove and feed carrier gas, carrier gas is the mixed gas of nitrogen and hydrogen, and the volume ratio of nitrogen and hydrogen is nitrogen: hydrogen=7:3; Carrier gas brings to carbon source YLENE in the Reaktionsofen with 0.8 ml/min; Under 700 ℃, carry out the chemical vapor deposition growth carbon nano-particle on the silicon nano hole column array surface, the reaction times is 15 minutes, afterwards again under the shielding gas nitrogen atmosphere with Reaktionsofen in temperature reduce to room temperature; Obtain one deck carbon nano-particle in the silicon nano hole column array surface growth this moment; Promptly generate one deck carbon nano-particle rete on the silicon nano hole column array surface, make at the bottom of carbon nano-particle film/silicon nano hole column array active group, the stereoscan photograph at the bottom of carbon nano-particle film/silicon nano hole column array active group is seen shown in Fig. 1 (b); The transmission electron microscope photo of the active suprabasil carbon nano-particle of carbon nano-particle film/silicon nano hole column array is seen shown in Figure 2, and the Raman spectrogram at the bottom of carbon nano-particle film/silicon nano hole column array active group is seen shown in Figure 3.
Embodiment 2
At the bottom of preparation carbon nano-particle film/silicon nano hole column array active group, step is following:
(1) resistivity is inserted in the autoclave less than the p type single crystal silicon sheet of 3.0 Ω cm; In autoclave, fill corrosive fluid afterwards; Corrosive fluid is the corrosive fluid that the hydrofluoric acid of 15.00mol/l and iron nitrate aqueous solution that concentration is 0.02 mol/l are formed by concentration; Liquor capacity compactedness in the autoclave is 80%, corrodes 30 minutes down at 180 ℃, prepares the substrate material silicon nano hole column array;
(2) silicon nano hole column array that step (1) is made places in the horizontal pipe stove; Then under nitrogen atmosphere in the Reaktionsofen temperature rise to 1100 ℃; Stop afterwards in the horizontal pipe stove, feeding nitrogen, change in the horizontal pipe stove and feed carrier gas, carrier gas is the mixed gas of nitrogen and hydrogen; The volume ratio of nitrogen and hydrogen is nitrogen: hydrogen=1:1; Carrier gas brings to carbon source YLENE in the Reaktionsofen with 0.5 ml/min, under 1100 ℃, carries out the chemical vapor deposition growth carbon nano-particle on the silicon nano hole column array surface, and the reaction times is 10 minutes; Afterwards again under the shielding gas nitrogen atmosphere with Reaktionsofen in temperature reduce to room temperature; Obtain one deck carbon nano-particle in the silicon nano hole column array surface growth this moment, promptly generates one deck carbon nano-particle rete on the silicon nano hole column array surface, makes at the bottom of carbon nano-particle film/silicon nano hole column array active group.
Surface enhanced Raman scattering effect at the bottom of carbon nano-particle film/silicon nano hole column array active group that Test Example embodiment 1 makes detects
Being at the bottom of the surface enhanced Raman scattering effect active group at the bottom of the carbon nano-particle film/silicon nano hole column array active group that makes with embodiment 1, is 10 to concentration respectively -4Mol/L, 10 -5Mol/L, 10 -6Rhodamine 6G molecule in the rhodamine 6G aqueous solution of mol/L detects.Before detecting at the bottom of pre-treatment carbon nano-particle film/silicon nano hole column array active group; At first soaked into 2 minutes being placed at the bottom of carbon nano-particle film/silicon nano hole column array active group in the absolute ethyl alcohol; Deionized water rinsing is 3 times afterwards, with soaking half hour in the potassium chloride solution that is put into 0.1mol/L at the bottom of carbon nano-particle film/silicon nano hole column array active group, stains to remove possible ion then; Deionized water rinsing is 4 times then, and pre-treatment finishes.With being placed into concentration respectively at the bottom of pretreated carbon nano-particle film/silicon nano hole column array active group is 10 -4Mol/L, 10 -5Mol/L, 10 -6In the rhodamine 6G aqueous solution of mol/L, soaked 30 minutes, from solution, take out then and be put on the filter paper; Naturally dry in the air, do the Raman spectrum test subsequently, test condition: the employing wavelength is that the green glow of 532nm is made light source; 20 seconds time shutter, scan 2 times, the wave number sweep limit is 400cm -1~1800cm -1The Raman spectrum of rhodamine 6G molecule is seen shown in Figure 4 in each the concentration rhodamine 6G aqueous solution that obtains.As can be seen from Figure 4, to detect at the bottom of carbon nano-particle film/silicon nano hole column array active group, concentration is 10 -6The raman characteristic peak of rhodamine 6G molecule is high-visible in the rhodamine 6G aqueous solution of mol/L.

Claims (10)

1. at the bottom of the active group that a kind has a surface enhanced Raman scattering effect, it is characterized in that, prepare by the method that may further comprise the steps at the bottom of the said active group:
(1) resistivity is inserted in the autoclave less than the p type single crystal silicon sheet of 3.0 Ω cm, in autoclave, filled corrosive fluid afterwards, said p type single crystal silicon sheet corroded 30~60 minutes down in 100~200 ℃ in corrosive fluid, prepared silicon nano hole column array;
(2) silicon nano hole column array is placed in the Reaktionsofen; Then under the shielding gas nitrogen atmosphere in the Reaktionsofen temperature rise to 700 ℃~1200 ℃, stop afterwards in Reaktionsofen, feeding shielding gas, change into and in Reaktionsofen, feed carrier gas; Carrier gas is the mixed gas of nitrogen and hydrogen; Carrier gas brings to carbon source YLENE in the Reaktionsofen with 0.1~0.8 ml/min, under 700 ℃~1200 ℃, carries out the chemical vapor deposition growth carbon nano-particle on the silicon nano hole column array surface, and the reaction times is 5~15 minutes; Afterwards again under the shielding gas nitrogen atmosphere with Reaktionsofen in temperature reduce to room temperature, obtain at the bottom of carbon nano-particle film/silicon nano hole column array active group.
2. at the bottom of the active group with surface enhanced Raman scattering effect according to claim 1, it is characterized in that said corrosive fluid is that the hydrofluoric acid of 8.00~15.00 mol/l and iron nitrate aqueous solution that concentration is 0.02~0.08 mol/l are formed by concentration.
3. at the bottom of the active group with surface enhanced Raman scattering effect according to claim 1, it is characterized in that the volume compactedness of said corrosive fluid in autoclave is 60~90%.
4. at the bottom of the active group with surface enhanced Raman scattering effect according to claim 1, it is characterized in that said Reaktionsofen is the horizontal pipe stove.
5. the preparation method at the bottom of the described active group with surface enhanced Raman scattering effect of claim 1 is characterized in that, may further comprise the steps:
(1) resistivity is inserted in the autoclave less than the p type single crystal silicon sheet of 3.0 Ω cm, in autoclave, filled corrosive fluid afterwards, said p type single crystal silicon sheet corroded 30~60 minutes down in 100~200 ℃ in corrosive fluid, prepared silicon nano hole column array;
(2) silicon nano hole column array is placed in the Reaktionsofen; Then under the shielding gas nitrogen atmosphere in the Reaktionsofen temperature rise to 700 ℃~1200 ℃, stop afterwards in Reaktionsofen, feeding shielding gas, change into and in Reaktionsofen, feed carrier gas; Carrier gas is the mixed gas of nitrogen and hydrogen; Carrier gas brings to carbon source YLENE in the Reaktionsofen with 0.1~0.8 ml/min, under 700 ℃~1200 ℃, carries out the chemical vapor deposition growth carbon nano-particle on the silicon nano hole column array surface, and the reaction times is 5~15 minutes; Afterwards again under the shielding gas nitrogen atmosphere with Reaktionsofen in temperature reduce to room temperature, obtain at the bottom of carbon nano-particle film/silicon nano hole column array active group.
6. the preparation method at the bottom of the active group with surface enhanced Raman scattering effect according to claim 5; It is characterized in that said corrosive fluid is that the hydrofluoric acid of 8.00~15.00 mol/l and iron nitrate aqueous solution that concentration is 0.02~0.08 mol/l are formed by concentration.
7. the preparation method at the bottom of the active group with surface enhanced Raman scattering effect according to claim 5 is characterized in that the volume compactedness of said corrosive fluid in autoclave is 60~90%.
8. the preparation method at the bottom of the active group with surface enhanced Raman scattering effect according to claim 5 is characterized in that said Reaktionsofen is the horizontal pipe stove.
9. the application at the bottom of the described active group with surface enhanced Raman scattering effect of a claim 1 is characterized in that, divides the period of the day from 11 p.m. to 1 a.m being used for detecting the solution rhodamine 6G at the bottom of the said active group, can detect that concentration is 10 in the solution -6The rhodamine 6G molecule of mol/L.
10. the application at the bottom of the active group with surface enhanced Raman scattering effect according to claim 9 is characterized in that, adopts the detection method that detects rhodamine 6G molecule in the solution at the bottom of the said active group to be: with inserting 10 at the bottom of the said active group -6Soaked 30 minutes in the rhodamine 6G aqueous solution of mol/L, take out, dry under the air conditions; Do the Raman spectrum test afterwards, the test condition of Raman spectrum test is: the employing wavelength is that the green glow of 532nm is made light source, 20 seconds time shutter; Scan 2 times, the wave number sweep limit is 400cm -1~1800cm -1
CN 201110231298 2011-08-12 2011-08-12 Active substrate with surface enhanced Raman scattering effect Expired - Fee Related CN102391014B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110231298 CN102391014B (en) 2011-08-12 2011-08-12 Active substrate with surface enhanced Raman scattering effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110231298 CN102391014B (en) 2011-08-12 2011-08-12 Active substrate with surface enhanced Raman scattering effect

Publications (2)

Publication Number Publication Date
CN102391014A true CN102391014A (en) 2012-03-28
CN102391014B CN102391014B (en) 2013-04-03

Family

ID=45858422

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201110231298 Expired - Fee Related CN102391014B (en) 2011-08-12 2011-08-12 Active substrate with surface enhanced Raman scattering effect

Country Status (1)

Country Link
CN (1) CN102391014B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104132921A (en) * 2014-07-07 2014-11-05 华南师范大学 Chemical vapor deposition based method for preparing surface Raman enhanced active substrate
CN106556587A (en) * 2016-11-15 2017-04-05 山东师范大学 Surface enhanced Raman substrate and preparation method based on two-dimentional Tin diselenide. nanometer sheet
CN107188184A (en) * 2017-04-28 2017-09-22 杭州芬得检测技术有限公司 The hydrothermal preparing process of porous silica material and the preparation method of gas fluorescent optical sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101148247A (en) * 2007-08-16 2008-03-26 郑州大学 Carbon nanometer tube/silicon honeycomb array preparing method
CN101672786A (en) * 2009-03-12 2010-03-17 中国科学院理化技术研究所 Active substrate with surface provided with enhanced raman scattering effect and production method and application thereof
CN101768011A (en) * 2008-12-29 2010-07-07 中国科学院兰州化学物理研究所 Preparation method of corrosion resistant diamond film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101148247A (en) * 2007-08-16 2008-03-26 郑州大学 Carbon nanometer tube/silicon honeycomb array preparing method
CN101768011A (en) * 2008-12-29 2010-07-07 中国科学院兰州化学物理研究所 Preparation method of corrosion resistant diamond film
CN101672786A (en) * 2009-03-12 2010-03-17 中国科学院理化技术研究所 Active substrate with surface provided with enhanced raman scattering effect and production method and application thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104132921A (en) * 2014-07-07 2014-11-05 华南师范大学 Chemical vapor deposition based method for preparing surface Raman enhanced active substrate
CN104132921B (en) * 2014-07-07 2016-06-22 华南师范大学 A kind of method that surface Raman enhancement active substrate is prepared in chemically based vapour deposition
CN106556587A (en) * 2016-11-15 2017-04-05 山东师范大学 Surface enhanced Raman substrate and preparation method based on two-dimentional Tin diselenide. nanometer sheet
CN106556587B (en) * 2016-11-15 2019-02-19 山东师范大学 Surface enhanced Raman substrate and preparation method based on two-dimentional stannic selenide nanometer sheet
CN107188184A (en) * 2017-04-28 2017-09-22 杭州芬得检测技术有限公司 The hydrothermal preparing process of porous silica material and the preparation method of gas fluorescent optical sensor

Also Published As

Publication number Publication date
CN102391014B (en) 2013-04-03

Similar Documents

Publication Publication Date Title
Fan et al. Stable and efficient multi-crystalline n+ p silicon photocathode for H2 production with pyramid-like surface nanostructure and thin Al2O3 protective layer
Seger et al. Silicon protected with atomic layer deposited TiO 2: durability studies of photocathodic H 2 evolution
Ding et al. Designing Efficient Solar‐Driven Hydrogen Evolution Photocathodes Using Semitransparent MoQxCly (Q= S, Se) Catalysts on Si Micropyramids
Lopes et al. Dynamics of electrochemical Pt dissolution at atomic and molecular levels
CN105384358B (en) A kind of WO3Nano-chip arrays method for manufacturing thin film and its application study
Röthlisberger et al. Technique for continuous high-resolution analysis of trace substances in firn and ice cores
Choi et al. Sn‐Coupled p‐Si Nanowire Arrays for Solar Formate Production from CO2
Sim et al. Nanostructural dependence of hydrogen production in silicon photocathodes
Kargar et al. p‐Si/SnO2/Fe2O3 Core/Shell/Shell Nanowire Photocathodes for Neutral pH Water Splitting
Kolasinski Charge transfer and nanostructure formation during electroless etching of silicon
CN101962805B (en) Electrochemical preparation method of lanthanum phosphate or rare earth doped lanthanum phosphate film
Kim et al. Surface Enhanced Raman Scattering on Non‐SERS Active Substrates and In Situ Electrochemical Study based on a Single Gold Microshell
CN104746049A (en) Method for preparing surface-enhanced Raman scattering base with metal nanometer gaps by utilizing ALD (atomic layer deposition)
CN101221130A (en) Production method for surface reinforced Raman scattering active substrate based on silicon nano hole column array
CN102391014A (en) Active substrate with surface enhanced Raman scattering effect
Thalluri et al. Highly-ordered silicon nanowire arrays for photoelectrochemical hydrogen evolution: an investigation on the effect of wire diameter, length and inter-wire spacing
Hu et al. A dip coating process for large area silicon-doped high performance hematite photoanodes
Zhang et al. Eminently enhanced anticorrosion performance and mechanisms of X-ZnO (X= C, N, and P) solid solutions
CN102034901B (en) Transparent conductive thin film and preparation method thereof
CN102735510A (en) Passivation method for measuring N-type silicon chip minority carrier life
CN103364390A (en) Surface-enhanced Raman substrate, preparation method and application thereof
Huang et al. Ion beam defect engineering on ReS2/Si photocathode with significantly enhanced hydrogen evolution reaction
Lin et al. In Situ Assembly of MoSx Thin‐Film through Self‐Reduction on p‐Si for Drastic Enhancement of Photoelectrochemical Hydrogen Evolution
Tung et al. Tunable electrodeposition of Ni electrocatalysts onto Si microwires array for photoelectrochemical water oxidation
Sanzaro et al. Pervasive infiltration and multi-branch chemisorption of N-719 molecules into newly designed spongy TiO 2 layers deposited by gig-lox sputtering processes

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
C14 Grant of patent or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130403

Termination date: 20150812

EXPY Termination of patent right or utility model