CN102388162A - Gas injectors for cvd systems with the same - Google Patents

Gas injectors for cvd systems with the same Download PDF

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CN102388162A
CN102388162A CN 201080005892 CN201080005892A CN102388162A CN 102388162 A CN102388162 A CN 102388162A CN 201080005892 CN201080005892 CN 201080005892 CN 201080005892 A CN201080005892 A CN 201080005892A CN 102388162 A CN102388162 A CN 102388162A
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gas
reaction chamber
cvd
flow
outlet
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CN 201080005892
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CN102388162B (en )
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C·阿里纳
E·林多
R·T·小伯特伦
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S.O.I.Tec绝缘体上硅技术公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4557Heated nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403AIII-nitrides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/6416With heating or cooling of the system

Abstract

The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.

Description

用于CVD系统的气体注射器以及具有该气体注射器的CVD A gas injector for CVD and CVD system having the gas injector

系统 system

技术领域 FIELD

[0001] 本发明涉及半导体加工设备,特别地,本发明提供向CVD反应室(chamber)中注射经热能化的气体的气体注射器,并提供将经热能化的气体注射成预定的流型的注射器。 [0001] The present invention relates to semiconductor processing equipment, in particular, the present invention provides a gas injector into the CVD reaction chamber (Chamber) injected by the thermal energy of the gas, and to provide the injection by the thermal energy of the gas to a predetermined flow pattern of the syringe . 本发明也提供使用所提供的气体注射器的CVD系统。 The present invention also provides the use of a gas injector system is provided by CVD. 本发明在高容量制造GaN衬底上具有特别的应用。 The present invention has particular application in high volume manufacturing GaN substrate.

背景技术 Background technique

[0002] 前体气体在其被注射至CVD反应室中之前的不充分的热能化(加热)及其在该反应室中的过早混合可导致多个问题,这些问题可特定于所进行的各个具体CVD过程。 [0002] in which the precursor gas is injected into the insufficient thermal energy of the CVD reaction chamber before (heating) and premature mixing in the reaction chamber can result in a plurality of problems that may be specific to the each specific CVD process. 例如,考虑使用GaCl3和NH3作为前体气体的GaN的氢化物气相外延(hydride-vapour-phase epitaxial) (HVPE)生长,其中由不充分的热能化和过早的混合所导致的问题包括以下方 For example, consider a GaN GaCl3 and NH3 precursor gas hydride vapor phase epitaxy (hydride-vapour-phase epitaxial) (HVPE) growth, wherein the problems caused by insufficient mixing of thermal energy and resulting premature and include the following

[0003] 首先,不充分热能化的前体的注射可导致在生长衬底以外的表面上的不需要的沉积。 [0003] First, the injection is insufficient thermalized precursor can result in unwanted deposition on the growth surface other than the substrate. 随着时间的推移,此不需要的材料可在反应器中造成足以降低晶圆质量的增加的微粒水平,也可导致足以妨碍有效辐射加热的反应室壁(chamber wall)的涂覆。 Over time, this can cause unwanted material sufficient to reduce the level of particles in the mass of the increased wafer reactor, the reaction chamber walls may also be coated with lead (chamber wall) is sufficient to prevent effective heat radiation. 因为(^aCl3在相对低的温度下(例如500°C以下)从气相冷凝,因此未维持在汽化温度以上的反应器区域有可能变得被涂覆,从而发生这种不需要的沉积。因此,在向反应室中注射之前,需要将GaCl3热能化到至少约500°C的温度。事实上,在向反应室中注射之前,需要将GaCl3前体热能化到至少730°C的温度。 Since (^ aCl3 at relatively low temperatures (e.g. 500 ° C or less) from the gas phase condensation, and therefore is not maintained above the vaporization temperature of the reactor zone may become coated to such unwanted deposition occurs. Thus , prior to injection into the reaction chamber, the need of thermal energy to a temperature of GaCl3 at least about 500 ° C in fact, prior to injection into the reaction chamber, the required energy of GaCl3 precursor to a temperature of at least 730 ° C.

[0004] 进一步地,关于HVPE过程,不充分热能化的前体的注射可导致不需要的副反应, 该副反应限制GaN的实际沉积。 [0004] Further, regarding the HVPE process, the injection is insufficient thermalized precursor unwanted side reactions can cause the side reaction limits the actual deposition of GaN. 因为约930°C以下的气体温度可导致不需要的加合物(例如GaCl3INH3)的形成,在向反应室中注射之前,也需要将GaCl3和NH3都热能化到至少约930°C 的温度。 Since the gas temperature of about 930 ° C may result in less formation of undesirable adducts (e.g. GaCl3INH3) is, prior to injection into the reaction chamber, it is also necessary to heat both of GaCl3 and NH3 to a temperature of at least about 930 ° C. 另外,为了进一步限制这种不需要的加合物的形成,优选使III族和V族前体流保持隔离,直至它们与生长基座直接相邻为止。 Further, in order to further limit the formation of such unwanted adduct, it is preferable that the Group III and Group V precursor stream remain isolated, and grown until they directly adjacent the base so far. 前体气体的过早混合可造成不需要的反应副产物,并导致微粒在反应器中的生成。 Premature mixing of the precursor gas may result in undesired reaction by-products, and leads to particles generated in the reactor.

[0005] 最后,关于HVPE过程,在向反应室中注射之前,需要将V族前体(通常是NH3)热能化。 [0005] Finally, on HVPE process, prior to injection into the reaction chamber, the Group V precursor required (usually NH3) thermalized. 在与经热能化的III族前体混合时,不充分热能化的V族前体可使III族冷却至充分的程度以造成上述不良影响。 When mixed with the thermal energy of the group III material, insufficient thermal energy of the Group V precursor is cooled to make Group III degree sufficient to cause the adverse effects described above. 然而,V族氨前体的热能化不应在包括金属的环境下(例如, 如通常做法,在金属气体管线、金属反应器组件等中)进行。 However, amino group-V precursor is not thermalized (e.g., such as is common practice, the gas line in the metal, the metal reactor assembly, etc.) performed in the environment comprises a metal. 在提高的温度下,金属可将反应活性的NH3催化裂化成N2 (和H2),N2不与feiCl反应生成GaN。 At elevated temperatures, the reactive metal may cracking NH3 into N2 (and H2), N2 is not generated GaN and feiCl reaction.

[0006] 由于不充分的热能化和过早的混合造成的上述问题导致该前体气体在衬底上形成GaN产物的不充分反应。 [0006] due to insufficient thermal energy and the above-described problems caused by premature mixing of the precursor gas leads to insufficient formation of the reaction product of GaN on the substrate. 前体反应物由于颗粒/络合物的形成、在不需要的表面上的沉积等而损失。 Precursor reactants due to the formation of particles / complexes, and the like is deposited on the surface of the unnecessary loss. 改进前体气体的热能化和传输,可期望带来前体气体的更有效的利用以及降低成本和改进材料生长速率的相关益处。 Improved heat transfer and the precursor gas can be expected to bring more efficient use of the precursor gas and reduce the cost and improve the growth rate of the material associated benefits.

[0007] 在美国专利6,179,913,6, 733,591中解决了HVPE III-氮化物沉积中的前体热能化和隔离问题。 [0007] The precursor solution HVPE III- nitride deposition thermal energy and isolate problems in U.S. Patent No. 6,179,913,6, 733,591 in. 然而,此现有技术涉及的是常规设备(其中feiCl是通过HCl气体与液态镓的反应而原位形成),而并不适于直接注射气相GaCl3的设备。 However, this prior art relates to the conventional apparatus (which feiCl is formed in situ by the reaction of HCl gas with the liquid gallium), and is not suitable for direct injection device GaCl3 vapor. 美国临时申请60/015,524 涉及利用外部(^aCl3和NH3源的前体热能化和空间隔离,然而此现有技术申请所利用的是用于同时注射III族和V族前体的单个注射固定装置。 U.S. Provisional Application No. 60 / 015,524 relates to the use of external (and NH3 precursors ^ aCl3 heat source and spatial isolation, however, application of this prior art is utilized for simultaneously injecting a single injection of Group III and Group V precursors Fixtures.

发明内容 SUMMARY

[0008] 为了克服现有技术的限制,本发明提供了多种元件(包括热能化气体注射器)以改进前体的热能化和混合,其在前述特征上具有优势。 [0008] To overcome the limitations of the prior art, the present invention provides a variety of elements (including heat of the gas injector) to improve heat and mixing of the precursors, which have advantages in the characteristics.

[0009] 通过使气体穿过导管结构传导(将该导管结构设定尺寸并配置以增加所传导气体的停留时间)同时通过提供被动或主动地加热该导管结构的加热工具,本发明的热能化气体注射器提供了更好的前体热能化。 [0009] By conducting the gas passing through the conduit structure (structure of the catheter sized and configured to increase the residence time of the gas-conducting) while passively or actively heating the heating tools provided by the conduit structure, the thermal energy of the present invention. the gas injector provides better heat of the precursor. 通常,由于停留时间是气体流动长度对气体流动速度的比值,本发明的不同具体实施方案可提供导管结构,将该导管结构配置并设定尺寸以增加或降低气体流动通道长度和气体流动速度,或使其保持不变,只要增加了其比值(停留时间)。 In general, since the residence time is the ratio of the length of the gas flow velocity of the gas flow, various specific embodiments of the present invention may provide a conduit structure, the duct structure configured and dimensioned to increase or decrease the length of the gas flow passages and the gas flow rate, or to keep it the same, as long as the increase of the ratio (dwell time). 在优选的具体实施方案中,仅仅显著改变了这些参数中的一个,而其他参数基本上保持不变。 In a preferred embodiment, only one significant change in these parameters while other parameters remain essentially unchanged. 特别地,某些优选的具体实施方案将导管结构配置并设定尺寸以具有较长的通道长度和足以维持气体流动速度的截面,或者使其具有增加的截面(以及相应地降低的气体速度)和基本上不变的通道长度。 In particular, certain preferred embodiments of the catheter structure is configured and dimensioned to have a relatively long channel length and a gas flow rate sufficient to maintain the section, or to have an increased cross-section (as well as the gas velocity is correspondingly reduced) and a substantially constant channel length.

[0010] 应用于本发明的导管的相关术语,例如“增加的”、“降低的”和“不变的”,应理解为与通常可用于在相同的气体源和气体阱(sink)之间传输相同选定量的气体的导管相比较。 [0010] The term applied to the relevant conduit of the present invention, for example, "increased", "reduced" and "the same", generally understood to be used with the same gas source and gas well (sink) between the amount of gas transfer conduit compared to the same selected. 普通的导管通常如同根据源和阱之间的阻碍、设计标准、安全性等所合理地允许的那样短。 The conduits are generally conventional as short as obstacles, design standards, security, etc. between the source and the well reasonably allowed. 然而,本发明的具体实施方案具有这样的导管,该导管与这种合理的最小长度相比更长。 However, particular embodiments of the present invention has a catheter with such a longer length compared to a reasonable minimum. 并且,普通的导管所通常具有的截面如同根据所需质量流量、气体性质等所合理地允许的那样小。 And, Common catheter typically has a cross section as small as desired according to the mass flow rate, the gas properties and other reasonably allowed. 类似地,本发明的具体实施方案包括导管,其截面与这种合理的最小截面相比更大。 Similarly, specific embodiments of the present invention includes a catheter, a larger cross section compared with such a reasonable minimum cross-section.

[0011] 本发明包括特定的优选的热能化注射器,每个满足特定的气体注射要求(并适于特定的CVD反应室)。 [0011] The present invention includes certain preferred syringes thermal energy, each of gas injection to meet specific requirements (and adapted to the particular CVD reaction chamber). 例如,为了以相对较高的流率注射气体,合适的具体实施方案可具有较宽和/或较短的气体输送导管,而相反地,为了以相对较低的流率注射气体,合适的具体实施方案可具有较窄和/或较长的气体输送导管。 For example, in order to inject a gas at a relatively high flow rates, particularly suitable embodiments may have wider and / or gas delivery tube shorter, and conversely, in order to inject a gas at a relatively low flow rate, a suitable specific embodiments may have a narrow and / or long gas delivery conduit. 而且,为了注射具有选定的截面轮廓的气流,合适的具体实施方案可具有出口,该出口被配置为类似于该选定的截面轮廓。 Further, the injection gas stream to a selected cross-sectional profile having a suitable specific embodiment may have an outlet which is configured similarly to the cross-sectional profile selected. 具有较小截面轮廓的气流可通过喷嘴状出口来注射,而具有较大截面轮廓的气流(例如扩展至穿过CVD反应室的显著部分的轮廓)可通过水平方向上宽而垂直方向上窄的出口来注射。 Having a smaller cross-sectional profile of the gas stream may be injected through nozzle-like outlet, the airflow having a large cross-sectional profile (e.g., to extend through a significant portion of the profile of the CVD reaction chamber) may be wider in the vertical direction and narrow in the horizontal direction, exports to injection. 并且,为了注射可得益于增加的热能化的气体,合适的具体实施方案可具有停留时间甚至更长的气体导管,例如更长的导管或截面更大的导管,或者二者兼具的导管。 And, for the injection of a gas can benefit from increased energy suitable specific embodiments may have an even longer dwell time of the gas conduit, for example conduit bigger, longer, or both cross-section of both the catheter or catheter . 进一步地,导管结构和气体流动通道可具有不同的部分,其具有不同的截面尺寸和长度的结合,或具有平滑变化的截面尺寸等,只要净效果(net effect)为停留时间增加。 Further, the gas flow passage and the conduit structure may have different portions having different cross-sectional dimensions and binding length, or the like having a smoothly varying cross-sectional dimension, as long as the net effect (net effect) increases residence time. 然而,应理解,这些特定的具体实施方案可用于种类广泛的气体,这些气体具有各种各样的其他的和不同的注射要求。 However, it should be understood that these specific embodiments may be used for particular wide variety of gases which have a variety of other and different requirements for injections.

[0012] 导管结构和组件(例如气体传导部分)优选地由能够经受高温、腐蚀环境并且能够以较低成本制成所需形状的材料来制造。 [0012] The structure and assembly of the catheter (e.g., a gas conducting portion) is preferably capable of withstanding high temperatures, corrosive environments and can be manufactured at lower cost is made of a material having a desired shape. 优选的材料包括石英。 Preferred materials include quartz. [0013] 用于导管结构的加热工具可为主动或被动的。 [0013] means for heating the conduit structure may be active or passive. 主动加热工具包括产热元件,例如电阻元件、辐射元件、微波元件等,该产热元件被特别地选定并放置(通常相邻)从而向该导管结构直接传热。 Active heating means comprises a heat generating element, such as a resistor element, a radiation element, a microwave element and the like, the heat generating element is specifically selected and placed so as to directly transfer to the structure of the catheter (usually adjacent). 被动加热指将导管至少部分地放置在可由其吸收热量的加热环境(例如CVD反应室)中。 The passive heating means disposed in the conduit may be at least partially heated by absorbing heat in the environment (e.g., the CVD reaction chamber). 经加热的环境通常通过主动加热工具来加热,就这种主动加热工具而言,导管结构优选地放置在使得热传递在该情况下最优的环境中。 Generally the heated environment heated by active heating tool, a heating tool such initiatives, the conduit structure is preferably placed such that optimum heat transfer in this case the environment. 例如,在通过辐射元件加热CVD反应室的情况下,导管结构可放置在辐射元件附近,或者具有通向辐射元件的畅通通道,但并不妨碍基座、机械臂等。 For example, in the case of the CVD reaction chamber was heated by a radiation element, the conduit structure may be placed in the vicinity of the radiating element, or a clear passage to the radiating element, but does not prevent the base, a robot arm and the like. 被动加热也可通过引入从环境吸热从而向该导管结构传热的结构来优化。 Passive heating structure may be such to optimize the heat transfer from the environment of the catheter by introducing endothermic. 另外,被动热传递工具可包括黑体结构,该黑体结构被放置以吸收并向该导管结构再辐射(re-radiate)辐射能。 Further, the passive heat transfer means may comprise a black body structure, the structure is placed black body to absorb and re-radiate (re-radiate) the radiant energy conduit structure.

[0014] 黑体结构优选地由具有与整体(至少对于红外辐射)相近的发射率值并且还能够经受高温、腐蚀环境的材料制造。 [0014] Preferably bold structure (at least for infrared radiation) close to the emissivity value and further having integrally can withstand high temperatures, corrosive environments manufacturing material. 合适的材料包括A1N、SiC和B4C(分别具有0. 98,0. 92、 0. 92的发射率值)。 Suitable materials include A1N, SiC and of B4C (each having a value of emissivity 0. 98,0. 92, 0. 92).

[0015] 本发明的优选的具体实施方案提供了用于向CVD(化学气相沉积)反应室注射气体的注射器。 [0015] Preferred specific embodiments of the present invention provides a syringe for injecting a gas into the CVD (chemical vapor deposition) of the reaction chamber. 该注射器包括一个或多个气体输送导管,该导管用于将气体沿着流动通道从气体入口经过该导管传输至一个或多个气体出口;该导管具有一个或多个经配置和/或经尺寸设定的段,从而与该选定段未经如此配置和尺寸设定所需的时间相比,增加气体流过该导管所需的时间。 The injector comprises one or more gas delivery conduit along the flow path for the gas from the gas inlet to one or more gas outlet conduit through the transmission; the catheter having one or more configured and / or dimensioned setting section, so that not so configured and dimensioned as compared to the time required, the time required to increase the gas flow through the conduit to the selected segments. 优选地,气体输送导管的至少一部分是石英。 Preferably, at least a portion of the gas delivery tube is quartz. 本发明的优选的具体实施方案也提供用于加热该导管的加热工具,包括经加热的CVD反应室,或者一种或多种产热元件,或类似物。 Preferred embodiments of the present invention also provides a heating means for heating the conduit, comprising a heated CVD reaction chamber, or one or more heat generating elements, or the like. 本发明的注射器的优选用途包括注射前体气体和/或清除气体以进行CVD过程;例如,该前体气体可包括III-金属前体或氮前体以在CVD反应室中生长III-氮化物半导体。 Preferred use of the syringe of the present invention comprises a precursor gas injection and / or purge gas in the CVD process; e.g., the precursor gas may include a front or a metal III- nitrogen precursor in the CVD reaction chamber to grow the nitride III- semiconductor.

[0016] 在优选的具体实施方案中,所提供的注射器具有气体输送导管,该导管包括至少一个经配置的段以具有较长的气体流动通道,从而使得气体流动时间增加而不降低气体流动速度。 [0016] In a preferred embodiment, the syringe is provided with a gas delivery conduit comprises at least one segment is configured to have a relatively long gas flow channel, so that the gas flow time is increased without lowering the rate of gas flow . 可将较长的段配置为具有螺旋状的形状,从而延长入口和出口之间的气体流动通道。 It may be configured to have a longer helical segment shape, thereby extending the gas flow path between the inlet and the outlet. 该导管还可包括外壳,该外壳封装所有的段或者螺旋形段的一部分;该外壳可具有与该外壳相邻设置的外部夹套加热器,或者具有内部黑体元件,该黑体元件在该螺旋形段的外部,从而增强从外部(exterior)到气体输送导管的传热;该外壳还可具有气体入口和气体出口,可将该气体入口和气体出口进行配置和设定尺寸,从而使气体可从该入口经过该内壳流动到该出口。 The catheter may also include a portion or all of the spiral section of the housing section of the package housing; the housing may have an external jacket heater disposed adjacent to the housing, or black body member having an interior, in which the helical member blackbody outer segment so as to enhance heat transfer from the outside of the delivery catheter (exterior) to the gas; the housing further having a gas inlet and a gas outlet, the gas inlet may be configured and a gas outlet and sized so that the gas may be from the inner housing through the inlet flows to the outlet.

[0017] 在优选的具体实施方案中,所提供的注射器具有气体输送导管,该导管包括至少一个经配置的段以具有截面尺寸较大的气体流动通道,从而使得气体流动时间随着气体流动速度的降低而增加。 [0017] In a preferred embodiment, the syringe is provided with a gas delivery conduit comprises at least one segment is configured to have a larger cross-sectional dimension of the gas flow channel, so that the gas flow as the gas flow rate time the decreases. 该较大的段可具有较大但基本恒定的截面;可将该较大的段配置并设定尺寸,从而能被设置在CVD反应室(在加热时,该较大的段可在其中被该CVD反应室加热)以内;此注射器的较大的内部段可进一步沿着该反应室的纵向内壁设置;此注射器的较大的侧向段可具有多个出口,该出口经设置以引导从该反应室的侧壁流向中心的气流。 The larger segment, but it may have a substantially constant cross section larger; the larger section may be configured and dimensioned to be disposed in a CVD reaction chamber (at the time of heating, the larger section which can be the heat within the CVD reaction chamber); large internal section of the syringe may further be disposed along the longitudinal inner wall of the reaction chamber; larger lateral section of the syringe may have a plurality of outlets, the outlet is arranged to direct from the center of the flow stream side walls of the reaction chamber.

[0018] 在优选的具体实施方案中,可配置所提供的具有截面尺寸较大的导管的注射器, 以使得该截面尺寸从顶部(气体在该顶部进入该导管)到底部(气体在该底部离开该导管并进入CVD反应室)逐渐变大;可将该较大的段配置为具有相对较窄的顶部,其具有一个或多个气体入口,并具有相对较宽的底部,其具有一个或多个通向该CVD反应室的气体出口;可将该较大的段配置为在平面结构内的楔形通道。 [0018] In a preferred embodiment, the syringe may be configured to have a larger cross-sectional dimensions of the catheter is provided, so that the cross-sectional dimension from the top (the gas enters the conduit at the top) in the end portion (at the bottom of the gas leaving the catheter and into the CVD reaction chamber) gradually increases; the larger section may be configured to have a relatively narrow top, having one or more gas inlets, and a relatively wide bottom portion, having one or more a gas outlet leading to the CVD reaction chamber; the larger section may be configured to be wedge-shaped channel in the plane of the structure. 可将该平面结构配置为在垂直方向上较短,而在横向方向上较大;可将该平面结构进行配置并设定尺寸以使其能被设置在CVD反应室(在加热时,该较大的段可在其中被该CVD反应室加热)内部;特别地,该平面结构可沿着上游的横向反应室壁放置,以使流出气体引导至下游方向;该平面结构还可包括一个或多个并不与该楔形通道相交的第二气体输送导管。 The planar structure may be configured to be shorter, and larger in the transverse direction in the vertical direction; the planar structure may be configured and dimensioned so as to be disposed in a CVD reaction chamber (at the time of heating, the more a large segment which can be heated in the CVD reaction chamber) therein; in particular, the planar structure may be placed upstream of the chamber wall along a lateral reaction to the effluent gas to the downstream direction; the planar structure may further comprise one or more a second gas does not intersect with the wedge channel of the delivery catheter. 该第二气体输送导管可具有基本上恒定的截面尺寸,并且可具有一个或多个在楔形通道的出口侧面的通向该CVD反应室的第二出口。 The second gas delivery tube may have a substantially constant cross-sectional dimension, and a second outlet may have one or more of the CVD reaction chamber to the outlet side of the wedge channel.

[0019] 本发明还提供CVD系统,其具有一个或多个所提供的气体注射器。 [0019] The present invention also provides a CVD system, the gas injector having one or more provided. 此系统可包括具体实施方案的一个或多个第一注射器,该第一注射器具有导管,将该导管配置并设定尺寸为从顶部到底部逐渐变大;此注射器可在该CVD反应室中具有与基座(具有生长表面) 相邻的出口,并可定向此注射器以将第一气体引导成纵向流动,该纵向流动横向地扩展至部分或全部的基座生长表面;此注射器可包括具有两个或更多个第二出口的第二导管,其可被定向以将第二气体引导成在该第一气流侧面的纵向流动。 This system may comprise one or more specific embodiments of the first syringe, the first syringe having a catheter, the catheter is configured and dimensioned to gradually increase from the top in the end portion; the syringe may have the CVD reaction chamber base (having the growth surface) adjacent to the outlet, and the syringe is oriented to direct gas into a first longitudinal flow, which extend transversely to the longitudinal flow of part or all of the growth surface of the base; this may comprise a syringe having two one or more second conduit second outlet, which can be directed to a second gas flow directed to the longitudinal side of the first gas stream.

[0020] 这种系统还可包括具体实施方案的一个或多个第二注射器,该第二注射器具有导管,将该导管配置为螺旋状形状;此注射器可具有出口,该出口被放置和设置以将气体引导至第一注射器的入口。 [0020] Such a system may further comprise one or more specific embodiments of the second syringe, the second syringe having a catheter, the catheter arranged in a spiral shape; the syringe may have an outlet and arranged to be placed directing the gas to the inlet of the first syringe.

[0021] 这种系统还可包括具体实施方案的一个或多个第三注射器,该第三注射器具有以较大的截面尺寸配置的段;可将此注射器配置并发定尺寸,从而使该较大的段可设置在CVD反应室(在加热时,该较大的段可在其中被该CVD反应室加热)内部;该较大的内部段可沿着该反应室的纵向内壁设置;此较大的段可具有多个出口,所述出口被放置并定向以引导从该反应室的侧壁流向中心的多个气流。 [0021] Such a system may further comprise one or more specific embodiments of the third syringe, the syringe having a third section with a larger cross-sectional dimension disposed; this syringe may be configured concurrency dimensioned such that the larger the segments can be disposed in a CVD reaction chamber (at the time of heating, the larger section which can be heated in the CVD reaction chamber) therein; the larger inner segment may be disposed along the longitudinal inner wall of the reaction chamber; this large a plurality of segments may have an outlet, said outlet being positioned and oriented to direct a plurality of gas flow from the center of the sidewall to flow to the reaction chamber. 这种系统还可包括一个或多个黑体板,以增强从CVD反应室外部的加热元件到第三注射器的传热。 Such a system may further comprise one or more blackbody plates, to enhance heat transfer from the outside of the heating element CVD reaction chamber to the third syringe.

[0022] 本发明的另一个具体实施方案涉及用于向CVD(化学气相沉积)反应室中注射气体的如下方法:使气体沿着分段的流动通道从气体入口传输到一个或多个气体出口,其中每段均被配置或设定尺寸以增加相比于未经如此配置和尺寸设定的段的气体流动时间;并在气体穿过一个或多个段传输时将一个或多个段加热。 [0022] Another embodiment of the present invention relates to a CVD (chemical vapor deposition) method in the reaction chamber to inject a gas: a gas transfer from the gas inlet to one or more gas outlet flow passage along segment wherein each segment are configured or sized to increase the gas flow time compared to a non configured and dimensioned such segment; and when one or more segments through one or more segments of the transmission in heating the gas . 至少一个选定的段提供具有较大的截面尺寸的气体流动通道,并在较小的气体流动速度下提供增加的气体流动时间,在其中流动的气体包括用于在反应室中生长III族-氮化物半导体的氮前体。 Providing at least one selected segment of the gas flow channel having a larger cross-sectional dimension, and to provide increased gas flow time at a smaller gas flow rate, gas flow which comprises growing a Group III in the reaction chamber - nitrogen precursor nitride semiconductor. 此外,至少一个其他的段具有从顶部到底部(该段在该底部通向反应室)逐渐变大的截面尺寸,其中所流动着的气体包括用于在反应室中生长III族-氮化物半导体的III族-金属前体。 Further, at least one other section having a cross-sectional dimension from the top in the end portion (the leading segment at the bottom of the reaction chamber) is gradually increased, wherein the flowing gas includes means for growing the Group III in the reaction chamber - nitride semiconductor group III - metal precursor. 反应室优选地在其中包括具有生长表面的基座,并且将III族-金属和氮前体的气体加热并引导至该基座生长表面以使III族-氮化物半导体在该表面上生长。 The reaction chamber preferably includes a base having a growth surface, and Group III - nitrogen gas and the metal precursor body is heated and guided to the surface of the base to grow a Group III - nitride semiconductor grown on the surface. 有利地,该气体在约930°c以上的温度下反应以促进III族-氮化物半导体在该基座生长表面上的生长,同时使不需要的前体络合物的形成最少化。 Advantageously, the gas is at a temperature above about 930 ° c to promote reaction of the Group III - nitride semiconductor grown on the growth surface of the base, while the formation of unwanted precursor complex minimized.

[0023] 本文所述的优选的具体实施方案和特定的实施例应被视作本发明的范围的例子, 但并不限制本发明。 Examples [0023] The preferred embodiments described herein and specific embodiments are to be considered as the scope of the present invention, but do not limit the present invention. 本发明的范围应参照权利要求书来确定,其被解释为覆盖了对本领域技术人员显而易见的修改、等同方案、替代方案等。 Scope of the invention should be determined with reference to the claims, which is construed to cover apparent to those skilled in the art modifications, equivalents, alternatives and the like. 为了清楚和简洁起见,并非具体实施方案的所有特征都在本文中描述;应理解,并未被描述的特征为本领域常规技术,而本领域技术人员可将其加入本发明。 For clarity and conciseness, not all features of the specific embodiments are described herein; it should be understood that features have not been described in the art by conventional techniques, the skilled in the art can be added to the present invention. [0024] 本文所用的标题仅为清楚起见,并不具有任何意欲的限制。 Title [0024] As used herein clarity only, not intended to have any limitations. 本文引用了多份文献, 其全部公开内容为了所有目的以全文引用方式并入本文。 Multiple documents cited herein, the entire disclosures for all purposes herein incorporated by reference in its entirety. 此外,并不承认所引文献(无论其特征为何)早于具有本文所要求保护的主题的发明。 Furthermore, the cited references do not recognize (regardless of what features) having earlier herein claimed subject matter.

附图说明 BRIEF DESCRIPTION

[0025] 参照下文中的对本发明的优选具体实施方案以及特定具体实施方案的说明性实施例的详细说明,以及附图可更加充分地理解本发明,在附图中: [0025] detailed description of embodiments with reference to the illustrative preferred embodiments of the invention and the particular specific embodiments hereinafter, and may be more fully understood from the accompanying drawings of the present invention, in the drawings:

[0026] 图1图示地说明了示例性的CVD反应器; [0026] Figure 1 graphically illustrates an exemplary CVD reactor;

[0027] 图2A-2D图示地说明了本发明的热能化气体注射器的第一具体实施方案; [0027] Figures 2A-2D illustrate the embodiment described first specific embodiment of the gas injector of the thermal energy of the present invention;

[0028] 图3A-3C图示地说明了本发明的热能化气体注射器的第二具体实施方案; [0028] Figures 3A-3C graphically illustrate a second specific embodiment of the thermal energy of the gas injector of the present invention;

[0029] 图4A-4C图示地说明了本发明的热能化气体注射器的第三具体实施方案;和 [0029] Figures 4A-4C diagrammatically illustrate a third specific embodiment of the heat of the gas injector of the present invention; and

[0030] 图5图示地说明了包括示例性CVD反应室和本发明的热能化气体注射器的组合。 [0030] Figure 5 graphically illustrates an exemplary combination of the CVD reaction chamber and the thermal energy of the gas injector of the present invention.

具体实施方式 detailed description

[0031] 本发明提供改进的气体处理,以用于化学气相沉积(CVD)反应器系统,特别地用于半导体加工的CVD系统,更特别地用于具有反应室(其通常具有矩形截面,其中前体气体的平面流动经过衬底,沉积或其他反应在该衬底上发生)的CVD系统。 [0031] The present invention provides an improved process gas to the reactor system for the chemical vapor deposition (CVD), in particular for CVD semiconductor processing systems, and more particularly to a reaction chamber (which typically has a rectangular cross-section, wherein precursor gas flow plane through the substrate, deposition or other reaction occurs on the substrate) CVD system. 在讨论本发明之前, 简要地描述可在其中有效应用本发明的示例性CVD反应室。 Prior to discussing the present invention, can be briefly described wherein the effective application of the exemplary CVD reactor chamber of the present invention.

[0032] 图1以平面图说明了本发明可适用的示例性CVD反应室1的相关细节。 [0032] Figure 1 illustrates a plan view of an exemplary CVD reactor chamber relevant details of the present invention is applicable to 1. 图3A以截面图说明了类似的CVD反应器。 FIG 3A illustrates a sectional view similar to the CVD reactor. 在两幅图中,共同的编号定义相似的元件。 In both figures, the common elements are numbered definition similar. 示例性反应器1包括反应室3,其通常由石英制成从而使其能通过外部辐射加热灯来加热。 Exemplary reactor 1 comprises a reaction chamber 3, which is typically made of quartz so that it is heated by external radiation heat lamp. 包括前体气体和吹扫气体的工艺气体通过开口(或入口或注射器)5和9进入图底部的反应室3。 A reaction chamber including a process gas precursor gas and a purge gas through the opening (or an inlet or injector) 5, and 9 into the bottom of FIG. 3. 通常将该入口设计并调整以防止前体气体的过早混合。 The inlet is generally designed and adjusted to prevent premature mixing of the precursor gas. 此时,例如,不同的前体气体可通过分隔的(spaced-apart)开口5和9进入,而相对惰性的吹扫气可通过开口7进入。 In this case, for example, different precursor gas can be separated by (spaced-apart) into the opening 5 and 9, and a relatively inert purge gas can enter through the opening 7. 该工艺气体随后在图中穿过反应室而向上移动(定义为“下游”方向)并在位于中心的衬底上反应,该衬底由衬底17支撑在基座15上。 The process gas is then passed through the reaction chamber moves upward in the figure (defined as "downstream" direction), and located on the center of the reaction substrate, the substrate supported by the substrate 17 on the base 15. 该基座通常由支撑环或板13引导而旋转。 The base is usually rotated by the guide plate 13 or a support ring. 该工艺过程气体通过排气口11流出该反应室。 The process gas exits the reaction chamber through the exhaust port 11.

[0033] 任选地,反应器1可包括黑体板19,该黑体板19在基座15和衬底17上方,被支撑在例如支撑件21上。 [0033] Optionally, the reactor may comprise a black body panel 19, the black body 19 above the base plate 15 and the substrate 17, is supported on the support member 21, for example. 通过从辐射加热灯吸收辐射并将所吸收的辐射再次辐射到工艺气体中,此黑体板可帮助靠近该板流动的工艺气体的热能化。 Re-radiated radiation absorbed by the process gas and the absorption of radiation from the radiant heating lamps, close to this blackbody plate helps heat the process gas flow plate. 参见例如2008年2月27日提交的美国临时专利申请61/031,837 (其为了所有目的以全文引用方式并入本文)。 See, eg, US Provisional Patent February 27, 2008, filed 61 / 031,837 (incorporated by reference in its entirety herein for all purposes).

[0034] 在下文中,术语“纵向”和“横向”用于指由图1中的标注箭头所指明的CVD反应室内的方向。 [0034] Hereinafter, the term "longitudinal" and "transverse" refers to a direction for CVD reaction chamber by the arrows in FIG. 1 are denoted specified. 纵向方向也被称作“上游”和“下游”;方向为纵向的壁也被称作侧壁。 The longitudinal direction is also referred to as "upstream" and "downstream"; the longitudinal direction of the wall is also referred sidewall. 横向方向也称作“穿过反应器”;方向为横向的壁也被称作端壁(end wall)。 Also referred to as the transverse direction "through the reactor"; direction transverse wall is also called end walls (end wall).

[0035] 本发明在此示例性CVD反应室的情况下如下地描述,其中并不进一步考虑该CVD 反应室的细节。 [0035] The present invention is described below in the case of this exemplary CVD reaction chamber, wherein no further consideration of the details of the CVD reaction chamber. 然而,此重点仅是出于简洁的考虑而并非限制,因为应理解此示例性反应室并不是限制性的,并且本发明的装置也与其他的CVD反应室相容。 However, this is only focused and not limiting considerations for brevity, as should be understood that this example is not limiting the reaction chamber, and the apparatus of the present invention is also compatible with other CVD reaction chamber.

[0036] 热能化气体注射器的优选具体实施方案 [0036] The thermal energy of the gas injector of a preferred embodiment of

[0037] 现在描述本发明的热能化气体注射器的优选具体实施方案,通过对导管结构进行 [0037] now be described a preferred embodiment of the thermal energy of the gas injector according to the present invention, by catheter structure

9配置和尺寸设定,以使得气体流动通道所具有的长度增加到超过在该情况下合理需要的长度(根据该反应室的物理布局和相关设备),该热能化气体注射器实现了气体停留时间的增加,并且该热能化气体注射器所具有的截面至少不大幅度地小于为了预期的气体流动速度所合理需要的截面(根据导管中气体流动的已知原理)。 9 dimensioned and arranged so that the gas flow passage has a length longer than the increases in this case reasonably necessary (depending on the physical layout of the apparatus and associated reaction chamber), the thermal energy of the gas injector to achieve a gas residence time increases, and the thermal energy of the gas injector has a cross-section at least not significantly less than the cross section for the intended gas flow rate reasonably required (in accordance with known principles of gas flow conduit). 因此,该具体实施方案的注射器可用于以相对较低的流率进入CVD反应室的气体。 Thus, the particular embodiment of the syringe may be used at a relatively low flow rate of gas entering the CVD reaction chamber. 优选地,通道长度的增加可通过将该流动通道弯曲和/或折叠成蛇形(例如螺旋形)而得以满足。 Preferably, the channel length may increase the flow passage is bent and / or folded in a serpentine (e.g., spiral) and is satisfied by.

[0038] 由于该具体实施方案的热能化气体注射器更好是用于以相对较低的(或至少不增加的)流率注射热能化气体,当在与III-氮化物化合物的生长相关的使用中,该具体实施方案的注射器更优选地用于III-金属前体(通常以相对较低的流率进入)而不用于N 前体(通常以相对较高的流率进入)。 [0038] Since the thermal energy of the gas injector of the more specific embodiments for a relatively low (or at least not increase) the flow rate of injected gas heat, when used in the growth associated with the compound III- nitride in the particular embodiment of the syringe more preferably for the front III- metal precursor (typically enters at a relatively low flow rate) and not for N precursor (typically enters at a relatively high flow rate). 然而,该具体实施方案的注射器也可用于以相对较低的流率进入CVD反应室的气体。 However, the particular embodiment of the syringe may also be used at relatively low gas flow rate into the CVD reaction chamber.

[0039] 图2A-D图解说明了该具体实施方案的热能化气体注射器。 [0039] FIGS. 2A-D illustrate the thermal energy of the gas injector of the specific embodiments. 特别地,图2A图解说明了导管结构47,该导管结构47具有螺旋形的气体输送导管49,该导管49具有基本上均勻的直径(截面)。 In particular, FIG. 2A illustrates the structure of the catheter 47, the catheter 47 has a helical structure of the gas delivery conduit 49, the conduit 49 having a substantially uniform diameter (cross section). 气体(例如前体气体)通过入口39进入导管结构47,流经螺旋形的导气部分49,并从出口41流出该导管结构(例如直接进入CVD反应室)。 Gases (e.g., precursor gas) through the inlet 39 into the conduit structure 47, flows through the helical air guide portion 49, and flows out from the outlet 41 of the conduit structure (e.g., directly into the CVD reaction chamber). 与为了使气体通过入口39和出口41之间的较短物理距离传导所合理需要的长度相比,气体输送导管49提供实际上更长的气体通道长度。 For passing the gas through the length of the shorter physical distance between the inlet 39 and outlet 41 compared reasonably required conductive, gas delivery tube 49 actually provides a longer length of the gas passage. 由于该气体输送导管49的螺旋形,气体流经导管结构47的通道长度长于,甚至大幅度地长于该入口和出口之间的实际物理距离。 Since the gas delivery tube 49 of a spiral, the gas flowing through the conduit structure 47 is longer than the channel length, or even substantially longer than the actual physical distance between the inlet and the outlet. 本文所述的螺旋形并非限制性的,本发明应被理解为包括了其他的蛇形形状。 Spiral not limiting herein, the present invention should be understood to include other serpentine shape. 可将前体气体从外部的源以通过外部气体控制设备(“气体面板”)所控制的流率供给至导管结构47。 The flow rate of precursor gas can be controlled from an external source through the external gas control device ( "gas panel") is supplied to the conduit structure 47.

[0040] 该具体实施方案的导管结构优选地包括外壳,该外壳封装并保护该气体输送导管的至少蛇形部分(其被认为最容易损坏)。 Conduit structure is preferably [0040] This particular embodiment comprises a housing, the housing encloses and protects at least a portion of the gas delivery tube serpentine (which is considered the most easily damaged). 本文中,导管结构47包括外壳33,除了入口39 和出口41之外,外壳33封装了导气部分49的全部。 As used herein, conduit structure 47 includes a housing 33, in addition to the inlet 39 and outlet 41 outside the housing 33 encapsulates all of the air guide portion 49. 外壳还可用作例如吹扫气的额外的气体输送导管。 The housing also may be used, for example, an additional gas purge gas delivery catheter. 本文中,外壳33已配备有吹扫气入口43和吹扫气出口45,因此吹扫气可经过该外壳流动。 Herein, the housing 33 is provided with a purge gas inlet 43 and purge gas outlet 45, and therefore the purge gas may flow through the housing. 吹扫气(或类似气体)流是有利的,因为它们可形成相对于CVD反应室内部的过压区域,该过压区域可用于限制或防止气体从该反应室内部回流。 Purge gas (gas or the like) flows are advantageous because they can form an overpressure with respect to the region inside the CVD reaction chamber, the overpressure region may be used to limit or prevent the gas from the interior of the reaction chamber to reflux. 来自操作中的CVD反应室内部的反应性且通常为腐蚀性的气体的回流可导致导管结构的损坏或者不需要的沉积。 The reaction from the internal operations of the CVD reaction chamber and is typically the reflux corrosive gases conduit structure may result in damage or undesired deposition.

[0041] 可将导管结构47被动加热或主动加热,或者同时将其被动和主动加热。 [0041] The conduit structure 47 may be active or passive heating heating, or while it is active and passive heating. 优选地, 可通过将导管结构部分或全部地放置在被加热的CVD反应室中(或者放置在另一加热环境中),从而将该导管结构被动加热。 Preferably, the conduit structure may be formed by partially or entirely placed in a CVD reaction chamber is heated (or another placed in a heated environment), so that the structure of the catheter passive heating. 图2B图解说明了经被动加热的导管结构54 (类似于图2A中的导管结构),其大部分被放置在CVD反应室53中。 FIG 2B illustrates a passive heating structure 54 via a conduit (the conduit structure similar to FIG. 2A), the majority of which is disposed in a CVD reaction chamber 53. 可任选地提供被动传热元件(本文中未图解说明)以改进从该反应室内部到该导管结构的热传递。 It may optionally be provided a passive heat transfer element (not illustrated herein) to improve from the interior of the reaction chamber to the heat transfer conduit structure. 例如,如果该CVD反应室是通过加热灯来加热,被动元件可包括与该气体注射器相邻地放置的从加热灯吸收辐射并将其再次辐射至该导管结构的黑体结构。 For example, if the CVD reaction chamber is heated by the heating lamp, the passive element may include a radiation absorbing gas to the injector is positioned adjacent to the heating lamp and blackbody radiation again to the structure of the conduit structure.

[0042] 优选地,可通过提供与该导气部分的至少一部分(优选地,配置其中至少一部分以增加气体停留时间)相邻并且直接向该相邻部分供热的产热元件,从而将导管结构主动加热。 [0042] Preferably, by providing at least a portion of the air guide portion (preferably, at least a portion arranged to increase the gas residence time) and the adjacent portion of the heat generating element directly to the adjacent heating, whereby the catheter structure active heating. 优选地,将主动加热元件放置在该导管结构的相邻处(或旁边)和外部;也可将其放置在该导管结构的内部。 Preferably, the active heating element is placed adjacent to the conduit structure (or side) and the outside; can also be placed inside the conduit structure. 主动加热元件包括释放辐射的元件,例如加热灯、感应加热元件、电加热元件(例如电阻加热元件)等。 The heating element comprises a release active radiating elements, such as heating lamps, induction heating element, an electrical heating element (e.g. resistive heating element) and the like. 还可同时将导管结构被动和主动加热,例如将被主动加热的导管结构至少部分地放置在CVD内的情况。 While the conduit structure may be passive and active heating, for example to be actively heated conduit structure at least partially disposed within the CVD conditions.

[0043] 图2B图解说明了大部分位于CVD反应室53 (与图1的CVD反应器1类似)外部的被主动加热的气体注射器55。 [0043] FIG. 2B illustrates mostly in the CVD reaction chamber (CVD reactor 1 is similar to FIG. 1) 53 is actively heated by an external gas injector 55. 注射器55包括导气部分56和主动加热元件57。 55 comprises a syringe portion 56 and the air guide 57 active heating element. 在本发明的进一步的具体实施方案中,被主动加热的气体注射器阳可在CVD反应室53的外部,并位于该反应器下方,其中经加热的前体进料41进入该CVD反应室的下侧(即进入底部)。 In a further embodiment of the present invention, it is actively heated gas male luer may be external to the CVD reaction chamber 53, and located below the reactor, which was pre heated feed at 41 enters the CVD reaction chamber side (i.e. into the bottom).

[0044] 图2C-D图解说明了被主动加热的导管结构51的基本细节。 [0044] FIGS. 2C-D illustrate the basic details are actively heated conduit structure 51. 在图2C(平面图)中, 主动加热元件31包括位于外壳33外部和周围的传导元件,例如被电阻加热的夹套加热器。 In Fig. 2C (plan view), active heating element 31 includes a conductive element 33 and the outer periphery of the housing, for example, a jacket heater is heated by the resistance. 在图2D (截面图)中,主动加热元件31包括辐射元件,例如加热灯,该辐射元件在该导电结构的外壳33外部,但被封装在壳32之内,该壳32可用作将辐射向内反射至气体输送导管49。 In FIG. 2D (sectional view), active heating element comprises a radiating element 31, such as heating lamps, the radiation outside the housing element of the conductive structure 33, but are enclosed within the housing 32, the housing 32 may be used as radiation inwardly gas delivery tube 49 to the reflector. 在两幅图中,从入口39经过螺旋形气体输送导管49流向出口41的气体在注射进CVD 反应室之前被加热元件31加热。 In both figures, a spiral from the inlet 39 through the gas delivery tube 49 to the gas outlet 41 is heated by the heating element 31 before injection into the CVD reaction chamber. 任选地,从入口43经过外壳33流向出口45的吹扫气也在注射前被加热。 Optionally, the flow 33 from the inlet 43 through the housing outlet 45 is also a purge gas is heated prior to injection. 由这些图,显而易见地,该主动加热元件限定了温度较高的区域,而气流在注射前从该区域流过。 From these figures, it is apparent, the active heating element defining a high temperature zone, and flowing gas stream prior to injection from the region.

[0045] 图2C-D也图解说明了任选的元件35,其可为主动或被动加热元件。 [0045] FIGS. 2C-D also illustrates an optional member 35, which may be active or passive heating element. 优选地,此任选的元件是用于改进从主动元件31到气体输送导管49的传热的被动元件。 Preferably, this optional component is a passive heat transfer element for improving the delivery catheter 49 from the element 31 to the active gas. 在采用传导加热元件的情况下,被动元件35可为使热量再次分布至导管49的内侧部分的导热体(conductor)。 In the case of conductive heating element, the passive element 35 may be a re-distribution of the heat to the heat conductor inner portion of the catheter 49 (conductor). 在采用辐射加热元件的情况下,被动元件35可为黑体结构,例如再次辐射热量的包括黑体材料的棒。 In the case where the radiant heating element, the passive element 35 may be a black-body structure, for example again comprises a bar heat radiation of a black body material. 在采用感应加热元件的情况下,被动元件35可包括能吸收感应能量从而加热该气体输送导管的导电结构。 In the case where the induction heating element, the passive element 35 may comprise an induction energy to heat capable of absorbing the electrically conductive structure of the gas delivery conduit. 通过任选的元件35,可通过主动加热元件将气体输送导管49中的气体直接加热,并且通过被动元件35将其间接加热。 Through an optional member 35, by heating the active element in the gas delivery conduit 49 the gas is heated directly, and by the passive element 35 which is indirectly heated.

[0046] 如所述的,该具体实施方案的热能化气体注射器(特别是如图2C的注射器51的注射器)可用于将注射气态的III-金属前体注射到CVD反应室中以加工III-氮化物化合物,特别是用于提供气态GaCl3前体,该气态GaCl3前体用于按照HVPE过程来生长GaN。 [0046] As described, the thermal energy of the gas injector particular embodiments (in particular, the syringe of the syringe 51 in FIG. 2C) may be injected into a CVD reaction chamber III- precursor to a gaseous metal injection processing III- nitride compound, in particular for providing a gaseous pre GaCl3 precursor, the gaseous body for GaCl3 HVPE process according to grow GaN. 在此应用中,外壳33和气体输送导管49优选地包括石英。 In this application, the housing 33 and the gas delivery tube 49 preferably comprises quartz. 被动元件35为实心的或管状的黑体结构,其优选地包括例如SiC、B4C、AlN。 Passive element 35 is solid or tubular structure blackbody, which preferably includes, for example, SiC, B4C, AlN. 主动加热元件31包括电加热套(例如夹套加热器),该电加热套包围石英外壳33并且能够加热到500至1000°C的温度。 31 active heating element comprising an electric heating mantle (e.g., a jacket heater), the electric heating mantle surrounding the quartz housing 33 and can be heated to a temperature of 500 to 1000 ° C in.

[0047] 在操作中,GaCl3前体通过入口39进入该注射器,其进料流率通常为数百sccm (标准立方厘米每分钟)的量级,但有可能达到20-30SLM(标准升每分钟),并通过出口41优选地在500至1000°C的温度下流出。 [0047] In operation, GaCl 3 precursor entering through the inlet 39 of the injector, its feed flow rate is typically several hundred sccm (standard cubic centimeters per minute) of the order, it is possible to achieve 20-30SLM (standard liters per minute ), and flows out at a temperature of 500 to 1000 ° C preferably 41 through the outlet. 队(或可选地为队和吐气体混合物)吹扫气通过入口43进入,其进料流率为约1-5SLM,其至少使该外壳的内部维持过压,并通过出口45流出。 Force (or alternatively to discharge a mixture of gas and team) sweep gas enters through the inlet 43, the feed stream which was about 1-5SLM, which at least the interior of the housing to maintain the overpressure, and out through the outlet 45. 在其停留在该注射器的过程中,该吹扫气也可被加热。 In the course of their stay in the syringe, the purge gas may also be heated.

[0048] 热能化气体注射器的进一步优选的具体实施方案 [0048] Further preferred thermal energy of the gas injector of the specific embodiments

[0049] 现在描述本发明的热能化气体注射器的优选具体实施方案,通过对导管结构进行配置和尺寸设定,以使得气体流动通道所具有的截面增加到超过为了预期的气体流动速度所合理需要的截面(根据导管中气体流动的已知原理),并使得气体流动通道的长度至少与该情况下合理需要的长度相同(特别地,根据该反应室的物理布局和相关设备)。 [0049] The preferred embodiments are now described with thermalized gas injector according to the present invention, through the conduit structure configured and dimensioned such that the gas flow channel having a cross-section to increase beyond the desired gas flow rate reasonably required cross section (according to known principles of gas flow conduit), and such that the length of the gas flow channel with at least the same length in this case reasonably necessary (in particular, the physical layout and associated equipment of the reaction chamber). 因此, 该具体实施方案的注射器可用于以较高流率进入CVD反应室的气体。 Thus, the particular embodiment of the syringe may be used at a higher flow rate of gas entering the CVD reaction chamber.

[0050] 由于该具体实施方案的热能化气体注射器是用于以相对较高的流率注射热能化气体,当在与III-氮化物化合物的生长相关的使用中,该具体实施方案的注射器更优选地用于N前体(通常以相对较高的流率进入)而不用于III-金属前体(通常以相对较低的流率进入)。 [0050] Since the thermal energy of the gas injector is a particular embodiment of a relatively high flow rate of injected gas heat, when used with the associated growth of III- nitride compound, particular embodiments of the syringe more preferably the precursor for the N (typically enters at a relatively higher flow rate) for the front without III- metal precursor (typically enters at a relatively low flow rate). 然而,该具体实施方案的注射器也可用于以相对较高的流率进入CVD反应室的气体。 However, the particular embodiment of the syringe may also be used at relatively high gas flow rate into the CVD reaction chamber.

[0051] 图3A-B分别图解说明了优选的热能化气体注射器的具体实施方案的截面和横向视图。 [0051] Figures 3A-B illustrate respectively a cross-sectional preferred specific embodiments of the thermal energy of the gas injector and a landscape view. 常规组件包括反应室壳71、基座69、生长衬底67和加热元件60。 Conventional housing assembly includes a reaction chamber 71, the base 69, the growth substrate 67 and the heating element 60. 在该具体实施方案中的导管结构61沿着反应室壳71的两侧设置,其与基座69的上表面的高度一致。 Consistent with the height of the upper surface of the base 69 of the conduit structure in this particular embodiment, the reaction chamber 61 along both sides of the housing 71. 气体进入入口75,在该导管结构内沿者该侧壁朝纵向方向流动,并通过一个或多个出口流出,该一个或多个出口将气体引导至穿过基座69的上表面而流向生长衬底67的横向流62。 Gas enters the inlet 75, are along the sidewall toward the longitudinal direction of the flow in the conduit structure, and out through one or more outlets, one or more of the outlet gas to flow to and grow through the upper surface of the base 69 of the transverse flow 62 of the substrate 67. 该具体实施方案的导管结构还可包括其他元件,特别是外壳。 The conduit structure specific embodiments may also include other elements, in particular the housing. 导管结构61被现有技术中已知的固定装置支撑并支持在该反应室内,在本文中,示例性的左边和右边的支撑固定装置73具有横向凸出的支架(或架子),该气体输送导管支撑在该支架上。 Conduit structure 61 is known in the prior art and support fixture supported within the reaction chamber, herein, an example of the support fixture 73 has left and right laterally projecting bracket (or shelves), the gas delivery conduit support on the bracket. 单独的较长支撑固定装置可伸出该CVD反应室的每个侧壁,或者可选地,多个较短支撑固定装置可沿着每个壁放置。 A separate supporting fixture may extend longer each side wall of the CVD reaction chamber, or alternatively, a plurality of shorter supporting fixture may be placed along each wall.

[0052] 可将导管结构61主动加热或被动加热,或者同时将其被动和主动加热。 [0052] The catheter can be passive or active heating structure 61 is heated while being passive and or active heating. 如同导管结构47 (图2C中),通过提供与至少该导气部分的一部分相邻的产热元件,也可将导管结构61主动加热。 As the conduit structure 47 (FIG. 2C), by providing at least a portion of the air guide portion of the adjacent heat generating elements, the conduit structure 61 may also be actively heated. 优选地,通过将导管结构61部分或全部地经过加热环境(例如被加热的CVD 反应室)和/或置于加热环境内,可将导管结构61被动加热。 Preferably, the conduit structure 61 by partially or completely through a heated environment (e.g., the CVD reaction chamber is heated) and / or placed in a heated environment, the conduit structure 61 may be passive heating. 此外,在经加热的具体实施中,被动传热工具优选地与部分(或全部)导管结构相关联,以改进从环境到该导管结构的传热。 Further, in a specific embodiment the heated, the tool is preferably a passive heat transfer some (or all) associated with the conduit structure, to improve the heat transfer from the environment to the conduit structure. 例如,此被动传热工具可包括黑体材料从而吸收来自反应室加热灯的辐射,并将所吸收的热量再次辐射至该导管结构。 For example, the tool may include a passive heat blackbody radiation absorbing material to the reaction chamber from the heating lamp, and the heat radiation absorbed again to the conduit structure.

[0053] 图3A图解说明了被动传热工具,其包括一个或多个板65,该板65在该导管结构上方,被支撑在示例性固定结构73的上支架上,并延伸穿过该CVD反应室(因此,也改进了向基座的传热)。 [0053] Figure 3A illustrates a passive heat transfer means comprising one or a plurality of plate 65, the upper plate 65 in the conduit structure, it is supported on a fixed structure on an exemplary stent 73, and extends through the CVD a reaction chamber (and thus, also improves the heat transfer to the base). 图3B图解说明了沿着该反应室放置以覆盖气体导管61的主要部分的多个板65。 FIG 3B illustrates a plurality of panels positioned to cover the main part 65 along the gas conduit 61 of the reaction chamber. 注意图示的板65之间的空隙仅为清楚起见,而这些板通常将彼此相邻。 Note that the illustrated gap between the plate 65 merely for clarity, and these plates generally adjacent to each other. 可选地,气体输送导管61可置于板65下方,或者板65可仅仅延伸至覆盖导管61,而使该反应室的中间部分暴露于该加热灯。 Alternatively, gas delivery tube 61 may be positioned below the plate 65 or plate 65 may extend to cover only the catheter 61, the middle portion of the reaction chamber is exposed to the heating lamp.

[0054] 该具体实施方案的热能化气体注射器的具体实施可用不同于图3A-B中图示的横向流型的流型来注射气体。 [0054] In particular embodiments of the thermal energy of the gas injector can be used differs from the particular embodiment of FIG cross flow type flow patterns. 3A-B illustrate to the gas injection. 例如,图3C图解说明了一个具体实施方案,其中气体输送导管61进一步被配置为具有在平行于气流63的纵向方向上注射气体的出口76。 For example, FIG. 3C illustrates a particular embodiment wherein the gas delivery tube 61 is further configured to have an outlet parallel to the longitudinal direction of the injection gas stream 63 76. 图3C的气体输送导管61可配备有用于注射横向流动的气体的其他出口(如图3A-B)。 FIG. 3C gas delivery tube 61 may be provided with additional lateral outlet for flowing gas injection (FIG. 3A-B). 如本领域技术人员所显而易见的,通过提供合适的出口,可注射其他流型的气体。 As apparent to the skilled artisan, and by providing a suitable outlet, other flow patterns may be injected gas. 进一步的具体实施方案可仅具有单个(左边的或右边的)气体输送导管61,可通过图示的两个气体输送导管中的每一个来注射不同的第二气体,等等。 A further particular embodiments may have only a single (left or right) gas delivery tube 61 can transport different conduits to each of a second gas through two gas injection shown, and the like.

[0055] 优选地,该具体实施方案的气体输送导管由能够经受在运行中的CVD反应器(例如HVPE反应器)内部形成的高温、腐蚀环境,并且很少与或不与前体气体(特别是NH3)相互作用的非金属材料来制造。 High Temperature [0055] Preferably, the specific embodiments of the gas delivery conduits (e.g. HVPE reactor) is formed capable of withstanding the internal operation of the CVD reactor, corrosive environments, and little or not with the precursor gas (especially is NH3) interaction of non-metallic material is manufactured. 这种优选的材料包括石英。 Such preferred materials include quartz. 黑体板优选地包括具有高发射率值(接近整体)并且还能经受高温、腐蚀环境的材料。 Blackbody plate preferably comprises a high emissivity values ​​(close entirety) and also subjected to high temperatures, corrosive environments material. 这种优选的材料包括A1N、SiC和B4C(发射率值分别为0. 98,0. 92和0. 92)。 Such preferred materials include A1N, SiC and of B4C (emissivity value 0. 98,0. 92 and 0.92, respectively).

[0056] 另外,导管结构和被动传热工具优选地根据特定的CVD反应室而被设定尺寸和配 [0056] Further, the passive heat transfer means and the conduit structure is preferably sized in accordance with the particular and CVD reaction chamber

12置,从而使其可被设置在该反应室内而不致于妨碍例如排气注射器、基座、机械传送工具和其他相关组件的操作。 12 is set so that it can be disposed within the reaction chamber without interfering with the operation of the syringe exhaust e.g., base, machine tools and other transmission components. 因此,可将热能化气体注射器的不同特定具体实施方案设定尺寸并配置以能被设置于不同尺寸和不同构型的CVD反应室内。 Thus various particular embodiments, the thermal energy of the gas injector can be sized and configured to be disposed in different sizes and different configurations of a CVD reaction chamber. 例如,已将图3A-C中图示的热能化气体注射器设定尺寸并配置,以使其以现在所述的方式设置在图1的示例性CVD反应室1中,并与该CVD反应室相配合。 For example, Figures 3A-C have been illustrated in the thermal energy of the gas injector sized and configured so that it is now in the manner provided in the exemplary CVD reaction chamber 1 of FIG. 1, the CVD reaction chamber and mate.

[0057] 从位于CVD反应室71的上游末端(图:3B-C中的底部)的注射器以纵向气流63 注射第一气体,该第一气体流向基座。 [0057] positioned from the upstream end 71 of the CVD reaction chamber: a syringe (FIG. 3B-C in the bottom) to a first longitudinal gas flow 63 injected gas, the first gas flow to the susceptor. 虽然并未特别地举例说明,该上游注射器可为一个或多个图2A-D的具体实施方案的注射器。 Although not specifically illustrated, the injector upstream of the specific embodiments of the syringe may be one or more of FIGS. 2A-D. 第二气体通过入口75 (在反应室71外部)进入该具体实施方案的热能化气体注射器61,并在截面较大的气体输送导管61内流动。 75 through the second gas inlet (outside the reaction chamber 71) of the gas injector 61 into the thermal energy of the specific embodiments, the flow of the delivery catheter 61 and the larger section of the gas. 在图;3B 的情况下,通过多个出口将气体注射成从两个侧壁流向基座的多股横向流;而在图3C的情况下,将第二气体注射成流向基座的两股纵向流。 In FIG.; 3B of the case, through a plurality of gas injecting outlet into a plurality of strands from a lateral flow to both side walls of the base; in the case of FIG. 3C, the second gas flow injected into the base of the two strands longitudinal flow. 第一和第二气体在该基座上方相遇并反应,而废气通过排气口64流出。 The first and second reaction gases meet and in the upper base, while the exhaust gas flows through the exhaust port 64. 已将气体输送导管61设定尺寸并配置以将其设置成大部分紧靠反应室71的壁,从而不妨碍该基座和其他组件。 61 has a gas delivery conduit wall sized and configured to be disposed against the majority of it into the reaction chamber 71 so as not to interfere with the base and other components.

[0058] 同样是在图;3B的情况下,横向气流62的流型细节可容易地通过例如出口尺寸的差异来控制。 [0058] Also in FIG.; 3B of the case, details of the cross-flow flow pattern 62 can be easily controlled by, for example, differences in the size of the outlet. 虽然气体输送导管61的较大截面直径主要是为了增加可用于从反应室内部吸热的停留时间而选定的,较大截面直径也允许该气体输送导管用作增压室(Plenum chamber),该增压室使沿着该导管长度的气压大约相等。 Although a larger cross-sectional diameter of the gas delivery tube 61 may be used mainly to increase the residence time of the reaction chamber from the interior and endothermic selected, also it allows a larger cross-sectional diameter of the gas delivery tube is used as a plenum (Plenum chamber), the plenum so that an approximately equal pressure along the length of the catheter. 例如,如果出口具有类似的尺寸, 横向流62可在纵向上均勻,而如果该出口具有变化的尺寸,则该横向流可发生变化。 For example, if the outlet has similar dimensions, transverse flow 62 may be uniform in the longitudinal direction, and if the outlet of varying sizes, the transverse flow may vary.

[0059] 如所述的,该具体实施方案的热能化气体注射器(特别是配置成与图3A-C的注射器61类似的注射器)可用于向CVD反应室中提供气态的N前体以加工III-氮化物化合物, 特别是用于提供NH3,该NH3用于按照HVPE过程来生长GaN。 N precursor [0059] As described, the thermal energy of the gas injector particular embodiments (in particular, the syringe 61 is configured to Figures 3A-C is similar to a syringe) may be used to provide gas to the CVD reaction chamber to process III - a nitride compound, in particular for providing NH3, NH3 for the process according to the HVPE growth of GaN. 对于本申请,气体输送导管61 可被设定成约1厘米至2厘米至2. 5厘米的尺寸(及其之间的尺寸),其优选地包括石英, 通过固定装置73而被支撑在该反应室内的黑体板下方(可选地在黑体板上方),并具有与基座69的上表面相邻的气体出口62。 For the present application, the gas delivery tube 61 may be set to about 1 centimeter to 2 to 2.5 cm in size (and size between), which preferably comprises a quartz, by a fixing means 73 is supported in the black body plate below the reaction chamber (optionally blackbody plate side), and having a base adjacent to the upper surface 69 of the gas outlet 62. 该注射器优选地包括石英;并且被动加热板优选地包括SiC、B4C、AlN。 The syringe preferably comprises quartz; passive heating plate and preferably comprises SiC, B4C, AlN.

[0060] 在操作中,NH3以1-3SLM的流率通过入口75进入该注射器。 [0060] In operation, NH3 at a flow rate 1-3SLM enters the injector 75 through the inlet. 可利用仅一个或多于两个的这种入口。 You may utilize only one or more than two such inlets. 气体输送导管61的出口位于基座69旁边。 Gas delivery tube 61 is located beside the outlet 69 of the base. 通过来自被加热的CVD反应室内部和SiC板(两者均通过位于石英反应器壳71上方(和下方)的外部灯源60而加热)的传热来加热NH3。 NH3 is heated by heat transfer from the heated interior of the reaction chamber and SiC CVD plate (both located in a quartz reactor heated by an external light source 60 above the housing 71 (and below)) is. 在进入该反应室之前,优选地将该NH3加热到至少600°C的温度。 Before entering the reaction chamber, the NH3 is preferably heated to a temperature of at least 600 ° C.

[0061] 热能化气体注射器的进一步优选的具体实施方案 [0061] Further preferred thermal energy of the gas injector of the specific embodiments

[0062] 现在描述本发明的热能化气体注射器的优选的具体实施方案,除了由于气体停留时间的增加而达到一定程度的热能化以外,该具体实施方案还将一股或多股气流注射成独立的纵向气流,该气流具有受控的横向空间分布。 [0062] The thermal energy of the gas injector will now be described according to the present invention preferred embodiment, except that due to increased gas residence time to achieve a certain level of thermalized outside, this particular embodiment will be injected into a stream or streams separate longitudinal flow of gas having a controlled transverse spatial distribution. 特别地,将至少一股纵向气流的空间分布控制成在横向上大部分均勻地经过占基座直径的显著部分的宽度。 Specifically, the longitudinal space at least an air flow to be uniformly distributed control width in the transverse direction through the most significant portion comprises the base diameter. 也可控制空间分布以使得不同的气体并不过早混合或者发生温度变化或化学相互作用。 It may also be controlled so that the spatial distribution of the different gases are not mixed prematurely or temperature changes or chemical interaction. 本文中,该具体实施方案的注射器被称作“帽舌(visor),,型注射器或“帽舌”注射器或“帽舌”。 Herein, the specific embodiments of the syringe is referred to as "the bill (visor) ,, syringe or" bill "syringes or" bill. "

[0063] 例如,在生长III-氮化物化合物的情况下,该具体实施方案的帽舌注射器可用于注射III-前体气体、N前体气体和吹扫气。 [0063] For example, in the case of growth III- nitride compound, the bill of the particular embodiment of the syringe may be used for injection III- precursor gas, N precursor gas and a purge gas. 特别地,帽舌注射器可将前体气体注射成在横向方向上大部分均勻的流,该横向方向上所经过的宽度占基座直径的显著部分。 In particular, the bill may be a syringe precursor gas is injected into the most significant portion of a uniform flow through the lateral width direction of the base diameter accounted for in the transverse direction. 因此,在该基座旋转时,该生长衬底将大部分均勻地暴露于该前体的一种。 Therefore, when the base rotates, most of the growth substrate is uniformly exposed to one of the precursor.

[0064] 在用于本文的上文中时,术语“基座的显著部分”意指气流(注射的,且无显著传播),可充分到达该基座的所有部分,从而使得其上负载的所有生长衬底均可直接暴露于该气流。 All the [0064] above when used herein, the term "significant portion of the base" means that the gas flow (injection, without significant propagation), may be sufficient to reach all parts of the base, so that the load on the growth substrate may be directly exposed to the gas stream. 因为基座通常在运行时旋转,延伸至经过至少该基座的约一半直径或更大部分的纵向流将大部分均勻地穿过“基座的显著部分”。 Since the susceptor is usually rotating during operation, to extend over about half the diameter of the base or at least a greater portion of the longitudinal flow evenly through the most "significant portion of the base." 更优选地,该流延伸穿过至少该基座直径的65%或80%或更大部分。 More preferably, the flow of the base extends through at least 65% or 80% or more most diameter. 甚至更优选地,当反应室的配置允许时,该气流基本上延伸至覆盖该基座的全部直径。 Even more preferably, when the reaction chamber is configured to allow the air flow extends substantially the entire diameter of the cover to the base. 术语“大部分均勻”意指所述流的气体速度变化小于约15%,或小于约25%,或小于约35%。 The term "largely uniform" means that the gas flow velocity varies by less than about 15%, or less than about 25%, or less than about 35%.

[0065] 帽舌型注射器具有出口,该出口具有选定的截面以形成并促使该流出气体成为选定的纵向分布。 [0065] a visor-type injector having an outlet, the outlet having a cross-section selected to cause the effluent gas is formed and becomes the selected longitudinal profile. 特别地,帽舌型注射器具有至少一个出口,该出口具有占该基座的显著部分的横向宽度,例如约为该基座直径的一半或更大部分的横向宽度(“宽”出口)。 In particular, the visor-type injector having at least one outlet, the outlet having accounted for a significant portion of the lateral width of the base, for example, about half the diameter of the base or most of the transverse width ( "width" exit). 其他出口(“窄”出口)通常较窄,从而将气体注射成更加受限的流(例如,通过配置成类似于图3C 的出口76的出口来注射的流)。 Other outlet ( "narrow" outlet) generally narrow, so that the gas stream is injected into the more limited (e.g., to the injection outlet 76 configured by the outlet flow similar to FIG. 3C). 方便且优选地,宽出口的垂直宽度小于(或远小于)其横向宽度,从而使得这些出口可被认为具有例如“扁平”的形状。 Preferably and conveniently, the width of the outlet is smaller than the vertical width (or smaller than) the transverse width thereof, so that these outlets can be considered to have a shape such as "flat". 窄出口可具有可比较的横向水平宽度和垂直宽度。 Narrow outlet may have a transverse horizontal width and vertical width comparable.

[0066] 具有较大横向宽度和较小垂直宽度的出口可方便地通过由平面材料制造具有平面形状的帽舌型注射器而得以满足。 An outlet [0066] having a greater lateral width and vertical width smaller can be easily satisfied by the bill type syringe made of a material having a flat planar shape. 出口优选地沿着该平面形状的横向边缘,入口可优选地在主体中或者沿着相对的横向边缘,而该平面形状内的通道连接入口和出口。 Outlet preferably along the lateral edges of the planar shape, the inlet may be preferably in the body or along opposite lateral edges, the planar shape of the passage connecting the inlet and outlet. 通过例如蚀刻或机械加工或烧蚀等,可容易地在第一平面材料中制造开口和通道(或槽或开孔),并随后通过用第二平面材料将该敞开的通道密封。 For example, by etching or ablating machining or the like, can be easily manufactured and the passage opening (or slot or hole) in a first plane of the material, and then sealing the open channels by a second flat material. 在其他的具体实施方案中,通道可在第一和第二平面材料中同时形成或者在单片平面材料内形成而制造。 In other embodiments, the channel may be simultaneously formed in a first plane and a second material is formed or manufactured in a single piece flat material. 优选地,该平面材料能够经受高温、化学腐蚀环境。 Preferably, the flat material can withstand high temperatures, chemically corrosive environments. 优选的这种材料为石英,也可使用黑体材料如A1N、SiC和B4C。 Preferred such materials are quartz, it may also be used materials such as bold A1N, SiC and B4C.

[0067] 优选地,连接宽出口与其(一个或多个)入口的通道具有增加的横向宽度,该宽度在该入口附近相对较窄,并逐渐增加直至其与该通道出口的横向宽度相符。 [0067] Preferably, the outlet is connected to its width (s) of the inlet channel having an increased lateral width of the relatively narrow width in the vicinity of the entrance, and gradually increases until it matches with the outlet channel transverse width. 在各个具体实施方案中,这种增加的通道可具有不同的形状以及配置不同的侧壁。 In various embodiments, this increased channels may have different shapes and different side wall configuration. 例如,具有线形侧壁的这种通道可具有“楔状”形状;可选地,具有曲线形侧壁的这种通道可具有“钟状”(凸侧壁) 或“喷嘴状”(凹侧壁)的形状。 For example, such channels may have sidewalls having a linear "wedge" shape; alternatively, having a curved channel may have side walls that "bell-shaped" (convex side walls), or "nozzle-like" (concave sidewall )shape. 通常,可根据流体流动的原理来选定通道的形状和壁的配置,从而使得经过该出口注射的流体具有需要的特征,例如横向均一性。 Typically, the principle can be selected according to the shape and configuration of fluid flow channel wall, so that fluid injected through the outlet having desired characteristics, such as transverse uniformity. 连接窄出口与其入口的通道可具有大部分恒定的截面尺寸。 An outlet connected thereto narrow inlet passage may have a largely constant cross-sectional dimensions.

[0068] 图4A-C图解说明了帽舌型注射器的示例性具体实施方案,该帽舌型注射器具有示例性的配置以及宽和窄的通道设置。 [0068] Figures 4A-C illustrate the exemplary embodiments of the visor-type injectors, the visor-type injector having an exemplary configuration as well as the wide and narrow channel settings. 图4A图解说明了具有位于中央的单个宽出口89和位于开口89侧面的两个窄出口99的帽舌注射器。 Figure 4A illustrates two narrow outlet 89 and the opening 89 of the side visor syringe having a single centrally located outlet width 99. 实心箭头指出了可通过这些开口来注射的气流。 Solid arrows indicate injected through these openings to gas flow. 气体输送导管97连接入口91和出口89,并通常具有楔状形状,延伸自该气体入口91附件的较窄顶部并线性地加宽直至其具有与出口89的横向宽度相等的横向宽度。 Gas delivery tube 97 connecting the inlet 91 and outlet 89, and has a generally wedge-like shape, extending from the top of the narrow gas inlet 91 and the attachment widens linearly until it has a lateral width equal to the transverse width of the outlet 89. 气体输送导管85连接入口93(在此图中不可见)和两个出口99。 Gas delivery tube 85 is connected to an inlet 93 (not visible in this figure) and two outlets 99. 将此导管配置成具有两个末端为该出口的分枝(arm)和将该分枝与该入口相连接的中央部分并且将此导管设定尺寸成具有大部分恒定且相对窄的截面尺寸。 This catheter is configured to have a branch (ARM) for the two ends of the central portion of the outlet and the inlet branch connected to this conduit and sized to have a largely constant and relatively narrow cross-sectional dimension. 此导管位于导管97的外侧(但并不与之相交)。 This conduit is located outside the conduit 97 (but not intersecting). 在此帽舌型注射器中,开口和通道在底层平面材料105中,并通过顶层平面材料103密封, 底层平面材料105和顶层平面材料103均优选包括石英。 The visor-type injector, the opening and the channel bottom planar material 105, and through the top layer 103 sealed planar material, planar material 105 and the underlying top layer 103 are preferably planar material comprises quartz. [0069] 图4B图解说明了另外的示例性帽舌型注射器,其具有两个相对宽且位于侧面的出口117和123,并且具有单个相对窄且位于中央的出口。 [0069] FIG. 4B illustrates a further exemplary bill type injector, which has two relatively wide and located on the side of the outlet 117 and 123, and has a single centrally located and relatively narrow outlet. 气体输送导管115连接入口113 和出口117,并且具有带一个直侧壁和一个曲线形侧壁的形状,从而使得其横向宽度在入口113附近增加得较快,而在出口117附近增加得较慢。 Gas delivery tube 115 connecting the inlet 113 and outlet 117, and has a linear shape with a curved side wall and a side wall, such that a transverse width increasing faster near the inlet 113, outlet 117 in the vicinity of slower increase . 连接入口119和出口123的气体输送导管121具有类似但镜像的形状。 Connecting the gas inlet 119 and the outlet 123 of the delivery catheter 121 having a shape similar but mirrored. 一同显现地,这两个导管均具有可被视作“喷嘴状”的形式。 Appear together, the two conduits can be viewed as having both "nozzle-like" form. 气体输送导管127连接入口125和较窄的出口129,并具有大部分恒定的截面尺寸。 Gas delivery tube 127 connecting the inlet 125 and outlet 129 narrower, and having a largely constant cross-sectional dimensions.

[0070] 图4C图解说明了图4B的具体实施方案的后视图,并表明了帽舌型注射器可由种类不同的材料制造。 [0070] FIG. 4C illustrates a rear view of a particular embodiment of FIG. 4B, and the visor-type injector may indicate different kinds of materials. 本文中,对比于图2A的具体实施方案,底层平面材料优选包括石英,而顶层平面材料优选包括黑体材料。 Herein, in contrast to the specific embodiment of FIG. 2A, bottom planar material preferably comprises silica, and the top layer material preferably comprises a black body flat material.

[0071] 优选地,使通过帽舌注射器来注射的气体热能化。 [0071] Preferably, the bill passing through the gas injection syringe of thermal energy. 在某些具体实施方案中,帽舌型注射器可接收已通过预先流过辅助注射器(例如类似于图2A-D或图3A-C的具体实施方案的注射器)而被热能化的气体。 In certain embodiments, the syringe may receive the bill has passed through the auxiliary flow previously syringe (e.g. the specific embodiments of the syringe 2A-D in Figures 3A-C or similar) is the thermal energy of the gas. 在优选的具体实施方案中,将帽舌注射器加热以使被注射的气体热能化,或使其进一步热能化。 In a preferred embodiment, the syringe heated to bill the injected gas thermalized, or made of further heat. 较少地优选使用额外加热元件的主动加热(由于注射器大的横向宽度)。 Preferably less additional active heating of the heating element (due to the large lateral width of the syringe).

[0072] 更优选地,可通过将帽舌注射器置于CVD反应室内而将帽舌注射器被动加热。 [0072] More preferably, the bill by syringe and placed in the CVD reaction chamber syringe passive heating bill. 同时,通过宽出口注射的气体的停留时间可由于平均流动速度的降低而增加。 Meanwhile, since the lower average flow velocity can be increased by injecting a gas outlet wide residence time. 特别地,与通过长度相同但截面尺寸恒定的通道注射的气体相比,当气体从通道的较窄部分流向该通道的较宽部分时,其流动速度降低。 In particular, as compared with the gas injected through the channel, but the same cross-sectional dimensions of a constant length, the wider portion when the gas flow passage from the narrower portion of the passage, its flow speed is reduced. 此外,可提供被动、黑体元件以增加向帽舌型注射器的传热。 Further, to provide passive element to increase the heat transfer to the blackbody bill type injectors. 此黑体元件可为如图4C中图解说明的注射器的一部分。 This element may be a blackbody portion 4C of the syringe illustrated in FIG. 同时,与本发明的其他注射器类似,可将黑体板装在帽舌型注射器的外部但与该帽舌型注射器相邻。 Meanwhile, another syringe of the invention similar to blackbody plate can be contained within the outer visor syringe, but adjacent to the bill-type injector.

[0073] 图5图解说明了示例性CVD反应室111与数个本发明的热能化气体注射器的组合,特别是与帽舌型注射器的组合,其配合注射某种CVD过程所必需的热能化气体。 [0073] FIG 5 illustrates an exemplary CVD reactor chamber 111 of a combination of several thermal gas injector of the present invention and, in particular, with a combination of the visor-type injectors, which with some thermal CVD process gas injection necessary . 本文中,帽舌型注射器82 (类似于图4A中图解说明的具体实施方案)被放置在反应室111的上游末端,并注射第一和第二气流:第一气流89在横向方向上是大部分均勻的,该横向方向上所经过的宽度占基座84的直径的显著部分;而第二气流99在流89侧面,并具有受限的横向宽度。 As used herein, the bill-type injector (similar to a particular embodiment illustrated in FIG. 4A described) 82 is disposed at the upstream end of the reaction chamber 111, and first and second airflow injection: a first gas flow 89 in the transverse direction is large uniform part, the lateral width direction after accounting for a significant portion of the diameter of the base 84; and a second side stream 99 in stream 89, and having a lateral width limited.

[0074] 第一和第二气流均被热能化。 [0074] The first and second gas stream are thermalized. 帽舌型注射器82从外部源接收气流108,该气流108 已通过流经注射器83而被热能化,该注射器83与参照图2C-D所述的注射器类似。 Bill syringe 82 receives air flow from an external source 108, the gas stream flowing through the syringe 108 has been thermalized 83, the injector 83 described with reference to FIGS. 2C-D is similar to the syringe. 将注射器83主动加热并使其大部分位于反应室111的外部。 The injector 83 is heated and the majority of the active is located outside the reaction chamber 111. 帽舌型注射器82位于反应室111内, 因此帽舌型注射器82可在注射前使气体进一步热能化。 Bill syringe 82 is located within the reaction chamber 111, so the bill 82 may be a gas syringe prior to injection of further heat. 提供与注射器81相邻的任选的黑体板109(为清楚起见,以虚线指出),以改进从该反应室到该帽舌型注射器的传热。 Providing a syringe, optionally a black body 81 adjacent to plate 109 (for clarity, indicated in dashed lines) to improve the heat transfer from the reaction chamber to the bill-type injectors.

[0075] 该组合也包括注射器81 (与参照图3A-B所述的注射器类似),该注射器81被放置在基座84的侧面并与反应室111的侧壁相邻,并在横向方向上注射第三气流87,该横向方向是从两个反应室壁到基座84并经过基座84。 [0075] The composition also includes a syringe 81 (and the syringe with reference to FIG. 3A-B is similar to), the injector 81 is disposed on the side of the base 84 and adjacent side wall of the reaction chamber 111, and a transverse direction injecting a third gas stream 87, the two lateral directions from the reaction chamber wall and through the base 84 to base 84. 横向流可具有选定的纵向分布,该纵向分布取决于注射器81的出口的结构的尺寸。 Lateral flow may have a selected longitudinal profile, the longitudinal distribution depends on the size of the outlet 81 of the syringe structures. 例如,可将该出口配置并设定尺寸以使得横向流87也基本上均勻地经过该基座的显著部分。 For example, the outlet may be configured and dimensioned so that the transverse flow 87 is also substantially uniformly through a significant portion of the base.

[0076] 注射器81位于反应室111内,因此可将气体在注射前热能化。 [0076] The syringe 81 is located within the reaction chamber 111, thus the gas before injection of thermal energy. 提供与注射器81 相邻的任选的黑体板109,以改进从该反应室到该帽舌型注射器的传热。 Providing syringe 81 with optional black body adjacent plate 109, to improve the heat transfer from the reaction chamber to the bill-type injectors.

[0077] 这种CVD反应室与本发明的热能化气体注射器的组合可用于例如III-氮化物材料(特别是按照HVPE过程的GaN)的沉积。 [0077] Such compositions thermal CVD reaction chamber gas injector of the present invention may be used with, for example, III- nitride material is deposited (in particular, the process according to the HVPE GaN) a. 对于GaN沉积,气流89可包括气相feCl3,气流87可包括NH3,而气流99可包括吹扫气如H2。 For GaN deposition, vapor stream 89 may include FeCl3, stream 87 may comprise NH3, and the purge gas stream 99 may comprise such as H2. 从垂直方向将两种前体气体注射成在横向方向上大部分均勻的流,所述流在该横向方向上经过的宽度占基座84的直径的显著部分,而吹扫气可为了各种目的而注射。 The two precursor gas is injected from a direction perpendicular to a uniform flow in the transverse direction of the majority of the flow through a significant portion of the width of the diameter of the base 84 occupy the lateral direction, and may be for various purge gas the purpose of injection.

[0078] 可配置本发明的注射器的不同组合,从而将气流注射成其他选定的流型。 [0078] The different combinations of the syringe can be configured according to the present invention, so that the gas stream is injected into the other selected flow pattern.

[0079] 虽然本发明的特定的特征显示在一些图中,而并未显示在其他图中,但这仅仅是为了方便起见,而每个特征可与根据本发明的任何其他特征或所有其他特征相结合。 [0079] Although specific features of the invention are shown in some drawings and not shown in the other figures, this is for convenience only and each feature may be combined with any other features of the present invention, all other features or Combine. 本文中使用的词语“包括”、“包含”、“具有”和“含有”应广泛而综合地予以阐述,而并不限于任何物理互连。 Words used herein, "comprising", "including", "having" and "comprising" should be broad and comprehensively explained, but not limited to any physical interconnection. 也将冠词“一”(“a”或“an”)等广泛而综合地阐述为指单和复数两者。 Also the articles "a" ( "A" or "AN") and the like are widely described as comprehensively refers to both single and plural. 同时, 并不将本申请所公开的任何具体实施方案视作唯一可能的具体实施方案。 At the same time, it does not present any particular embodiment disclosed herein is regarded as the only possible specific embodiments. 本领域技术人员将想到其他具体实施方案,这些具体实施方案落在权利要求书范围内。 Those skilled in the art will envision other specific embodiments, these specific embodiments within the scope of the appended claims.

Claims (30)

  1. 1. 一种用于向CVD (化学气相沉积)反应室注射气体的气体注射器,其包括:气体输送导管,所述气体输送导管用于将气体沿着流动通道从气体入口经过该导管传输至一个或多个气体出口;所述气体输送导管的一个或多个段,其中每段被配置或设定尺寸以增加相比于未经如此配置或尺寸设定的气体输送导管的段的气体经过所述导管的流动时间;和加热工具,所述加热工具被设置从而在气体穿过所述气体输送导管的一个或多个段传输时将所述气体输送导管的一个或多个段加热。 1. A method for the CVD (Chemical Vapor Deposition) chamber gas injector to inject a gas, comprising: a gas delivery conduit, said gas delivery conduit along the flow path for the gas from the gas inlet through the transfer conduit to a or more gas outlets; one or more segments of the gas delivery conduit, wherein each segment is configured or sized to increase compared to untreated gas section is so configured or dimensioned gas delivery conduit through the flow time of said conduit; and when the heating means, the heating means is arranged to pass through the gas delivery conduit or a plurality of segments in the transport gas to the gas delivery conduit or a plurality of heating sections.
  2. 2.根据权利要求1所述的气体注射器,其中所述气体输送导管包括石英。 The gas injector according to claim 1, wherein said gas delivery tube comprises quartz.
  3. 3.根据权利要求1所述的气体注射器,其中所述加热工具进一步包括将CVD反应室加热,且其中所述气体输送导管被设置以接收来自所述CVD反应室的热量。 3. The gas injector according to claim 1, wherein said heating means further comprises heating the CVD reaction chamber, and wherein the gas delivery conduit is arranged to receive heat from the CVD reaction chamber.
  4. 4.根据权利要求1所述的气体注射器,其中所述加热工具进一步包括一个或多个产热元件,且其中所述气体输送导管被设置以接收来自所述产热元件的热量。 4. A gas injector according to claim 1, wherein said heating means further comprises one or more heat generating elements, and wherein the gas delivery conduit is arranged to receive heat from the heat generating element production.
  5. 5.根据权利要求1所述的气体注射器,其中至少一个选定的段被配置为具有较长的气体流动通道并且在基本相似的气体流动速度下具有增加的气体流动时间。 5. A gas injector according to claim 1, wherein the at least one selected segment is configured to have a longer gas flow channel and having an increased gas flow at a substantially similar time to the gas flow rate.
  6. 6.根据权利要求5所述的气体注射器,其中所述气体输送导管包括在其中流动的气体,所述气体包括用于在所述CVD反应室中生长III族-氮化物半导体的III族-金属前体。 6. A gas injector according to claim 5, wherein the gas delivery conduit includes a gas flowing therein, comprising a gas used to grow the CVD reaction chamber in the group III - III nitride semiconductor - metal precursors.
  7. 7.根据权利要求5所述的气体注射器,其中所述气体输送导管的所述选定的段包括螺旋状形状。 A gas injector according to claim 5, wherein the gas delivery conduit includes a helical segment shape selected.
  8. 8.根据权利要求7所述的气体注射器,其进一步包括外壳,该外壳封装所述螺旋形的段的部分或全部,且其中所述加热元件进一步包括一个或多个夹套加热器,所述一个或多个夹套加热器设置在所述外壳的外部并且邻近所述外壳。 8. A gas injector according to claim 7, further comprising a housing encapsulating said helical portion or all of the segments, and further wherein said heating element comprises a sheathed heater or a plurality of the one or more heaters disposed in the outer jacket of the housing and adjacent said housing.
  9. 9.根据权利要求7所述的气体注射器,其中所述加热工具进一步包括黑体元件,该黑体元件位于所述外壳内,但位于所述螺旋形的段外部,用于增强从所述外部加热器到所述气体输送导管的传热。 9. A gas injector according to claim 7, wherein said heating means further comprises a black body element, the element is located within the housing bold, but located outside the helical segment, from the external heater for enhancing heat transfer to the gas delivery conduit.
  10. 10.根据权利要求7所述的气体注射器,其中所述外壳进一步包括气体入口和气体出口,并且将所述外壳进一步配置并设定尺寸,以使得气体可从所述入口经过所述内壳流动到所述出口。 10. The gas injector according to claim 7, wherein said housing further comprises a gas inlet and a gas outlet, and the housing further configured and dimensioned such that gas may flow through the inner housing from the inlet to the outlet.
  11. 11.根据权利要求1所述的气体注射器,其中至少一个选定的段被配置为具有气体流动通道,所述气体流动通道具有较大的截面尺寸,并且在较低的气体流动速度下具有增加的气体流动时间。 11. The gas injector according to claim 1, wherein the at least one selected segment is configured to have a gas flow passage, the gas flow passage has a larger cross-sectional dimension, and an increased gas flow at lower velocity gas flow time.
  12. 12.根据权利要求11所述的气体注射器,其中所述气体输送导管包括在其中流动的气体,所述气体包括用于在所述CVD反应室中生长III族-氮化物半导体的氮前体。 12. A gas injector according to claim 11, wherein the gas delivery conduit includes a gas flowing therein, comprising a gas used to grow the CVD reaction chamber in the group III - nitrogen precursor nitride semiconductor.
  13. 13.根据权利要求11所述的气体注射器,其中较大的段具有基本恒定的、较大的截面尺寸。 13. A gas injector according to claim 11, wherein the larger section having a substantially constant, the larger cross-sectional dimension.
  14. 14.根据权利要求11所述的气体注射器,其中所述加热工具进一步包括被加热的CVD 反应室,并且其中将所述较大的段配置并设定尺寸从而能沿着所述反应室的纵向内壁而被设置在所述CVD反应室内部,所述较大的段具有多个出口,所述出口被设置以引导从所述反应室的侧壁流向中心的气流。 A gas injector according to claim 11, wherein said heating means further comprises a CVD reaction chamber is heated, and wherein the greater section configured and dimensioned longitudinally such that the reaction chamber along a the inner wall is disposed inside the CVD reaction chamber, the larger section having a plurality of outlet, the outlet being arranged to direct airflow flowing from the center of the side wall of the reaction chamber.
  15. 15.根据权利要求11所述的气体注射器,其中所述较大的段的所述截面尺寸从顶部到底部逐渐变大,其中所述段通向CVD反应室。 15. A gas injector according to claim 11, wherein said larger cross-sectional dimension of the segments from the top in the end portion gradually increases, which leads to the segments CVD reaction chamber.
  16. 16.根据权利要求15所述的气体注射器,其中在所述气体输送导管中流动的气体包括用于在所述CVD反应室中生长III族-氮化物半导体的III族-金属前体。 16. The gas injector according to claim 15, wherein the gas conduit conveying gas flow comprises means for growing the Group III in the CVD reaction chamber - III nitride semiconductor - metal precursor.
  17. 17.根据权利要求15所述的气体注射器,其中所述较大的段包括在平面结构内的楔形通道,所述楔形通道具有相对较窄的顶部和相对较宽的底部,所述顶部具有气体入口,所述底部具有通向所述CVD反应室的第一出口,并且所述平面结构在垂直方向上较短,而在横向方向上较大。 17. The gas injector according to claim 15, wherein the larger section comprises a wedge channel in the plane of the structure, the passage having a relatively narrow wedge-shaped top and bottom relatively wide, said top having a gas inlet, said bottom having a first outlet leading to the CVD reaction chamber, and said planar structure in the vertical direction is short, while larger in the transverse direction.
  18. 18.根据权利要求17所述的气体注射器,其进一步包括至少一个并不与所述楔形通道相交的第二导气通道,该第二导气通道具有第二气体入口,具有基本恒定的截面尺寸,并且具有一个或多个在所述楔形通道出口的侧面的通向CVD反应室的第二出口。 18. The gas injector according to claim 17, further comprising at least one of which do not intersect with the channels of the second wedge-shaped guiding channel, the second air passage having a second gas inlet having a substantially constant cross-sectional dimension and having a second outlet leading to one or more sides of the CVD reaction chamber outlet passage of the wedge.
  19. 19.根据权利要求17所述的气体注射器,其中所述加热工具进一步包括被加热的CVD 反应室,其中将所述平面结构配置并设定尺寸从而能沿着上游的横向壁而被设置在所述CVD反应室内部,并且所述平面结构被设置以使气流导向至下游方向。 19. The gas injector according to claim 17, wherein said heating means further comprises a CVD reaction chamber is heated, wherein the planar structure is configured and dimensioned so that it can be disposed upstream of the transverse wall along said inner CVD reaction chamber, and wherein the planar structure is arranged to guide the air flow to the downstream direction.
  20. 20. 一种CVD (化学气相沉积)系统,其包括:CVD反应室,所述CVD反应室具有上游和下游横向壁和两个较长的纵向壁;和一个或多个根据权利要求1、7、14和17的一个或多个所述的气体注射器,其用于向所述CVD反应室注射气体。 20. A CVD (chemical vapor deposition) system, comprising: CVD reaction chamber, the CVD reaction chamber having upstream and downstream transverse walls and two longer longitudinal walls; and one or more of claims 1, 7 , a 17 or 14 and a plurality of said gas injector for injecting gas into the CVD reaction chamber.
  21. 21.根据权利要求20所述的CVD系统,其进一步包括:基座,所述基座具有生长表面,并且位于所述CVD反应室内;和根据权利要求17所述的第一气体注射器,所述第一气体注射器位于所述反应室内,与所述上游横向壁相邻,并且被配置和设定尺寸以使得第一出口与所述基座相邻并将第一气体注射成纵向流动,该第一气体延伸至穿过所述基座生长表面的一部分,和两个第二出口将第三气体注射成两股纵向流,该两股纵向流在所述第一气流的每一侧。 21. A CVD system according to claim 20, further comprising: a base having a growth surface, and positioned in the CVD reaction chamber; and a first gas syringe according to claim 17, wherein the a first gas injector located in the reaction chamber adjacent to the upstream transverse wall and being configured and dimensioned such that the base adjacent to the first outlet and the first gas injection into longitudinal flow, the second a gas extends through the base portion to the growth surface, the second outlet and the third two gas injection into two longitudinal flow, flow of the two streams at each longitudinal side of the first gas stream.
  22. 22.根据权利要求20所述的CVD系统,其进一步包括根据权利要求7所述的第三气体注射器,该第三气体注射器被配置以使第一气体从所述第三注射器的出口流向所述第一注射器的入口。 22. CVD system according to claim 20, further comprising a third gas injector according to claim 7, the third gas injectors are arranged so that the first gas flowing from the outlet of the third syringe the first syringe inlet.
  23. 23.根据权利要求20所述的CVD系统,其进一步包括两个根据权利要求14所述的第二气体注射器,该第二气体注射器位于所述反应室内,将每股第二气体配置为沿着纵向反应室壁的内侧,并且该第二气体注射器被设置以使得所述多个出口将气流从所述反应室的侧壁引导至中心。 23. CVD system according to claim 20, further comprising two second gas injector according to claim 14, the second gas injector located in the reaction chamber, the second gas is arranged along the share the reaction longitudinal inner wall, and the second gas injectors are arranged so that the outlet airflow from the plurality of sidewalls to the center of the reaction chamber.
  24. 24.根据权利要求23所述的CVD系统,其进一步包括一个或多个用于增强从所述CVD 反应室外部的加热元件向所述两个第二气体注射器传热的黑体板。 24. A CVD system according to claim 23, which further comprises one or more of the black body plate from the outside for enhancing the CVD reaction chamber heating element to the two second heat transfer gas injector.
  25. 25.根据权利要求21所述的CVD系统,其中所述第、第二和第三气体包括用于CVD过程的前体气体和吹扫气。 25. A CVD system according to claim 21, wherein said first, second, and third precursor gas comprises a gas and a purge gas for the CVD process.
  26. 26. 一种用于向CVD (化学气相沉积)反应室中注射气体的方法,该方法包括:沿着分段的流动通道,将气体从气体入口传输到一个或多个气体出口,其中每段被配置或设定尺寸以增加相比于未经如此配置或设定尺寸的段的气体流动时间;和在所述气体穿过所述一个或多个段传输时,将所述一个或多个段加热。 26. A method of injecting gas into a CVD (chemical vapor deposition) for the reaction chamber, the method comprising: a flow channel segment along the transport gas from the gas inlet to one or more gas outlet, wherein each segment be configured or sized to increase the gas flow time compared to a non configured or dimensioned such segments; and when one or more segments through the transport of the gas, the one or more stage heating.
  27. 27.根据权利要求沈所述的方法,其中至少一个选定的段提供具有较大的截面尺寸的气体流动通道,并在较小的气体流动速度下提供增加的气体流动时间,在其中流动的气体包括用于在所述反应室中生长III族-氮化物半导体的氮前体。 27. The method of claim sink, wherein the at least one selected segment to provide a gas flow channel having a larger cross-sectional dimension, and to provide increased gas flow time at a smaller gas flow rate flowing therein gas includes the reaction chamber for growing group III - nitrogen precursor nitride semiconductor.
  28. 28.根据权利要求27所述的方法,其中至少一个其他的段具有从顶部到底部逐渐变大的截面尺寸,所述段在所述底部通向反应室,在其中流动的气体包括用于在所述反应室中生长III族-氮化物半导体的III族金属前体。 28. The method according to claim 27, wherein the at least one other section having a cross-sectional dimension from the top in the end portion gradually increases, leading to the segments at the bottom of the reaction chamber, wherein the gas flow comprises means for growing the group III in the reaction chamber - a group III nitride semiconductor metal precursor.
  29. 29.根据权利要求观所述的方法,其中所述反应室在其中包括具有生长表面的基座, 并且将III族金属和氮前体的气体加热并引导至所述基座生长表面以使III族-氮化物半导体在该表面上生长。 Concept 29. The method of claim, wherein the reaction chamber includes a base having a growth surface, and the gas is nitrogen and the group III metal body is heated and directed to the growth surface of the base so III group - nitride semiconductor grown on the surface.
  30. 30.根据权利要求四所述的方法,其中所述气体在约930°C以上的温度下反应以促进III族-氮化物半导体在所述基座生长表面上的生长,同时使不需要的前体络合物的形成最少化。 30. The method according to claim four, wherein said gas is at a temperature above about 930 ° C to facilitate the Group III - nitride semiconductor grown on the growth surface of the base, while the unnecessary pre ligand complex formation is minimized.
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