CN102346999B - AMOLED (Active Matrix/Organic Light-Emitting Diode) pixel circuit and driving method thereof - Google Patents

AMOLED (Active Matrix/Organic Light-Emitting Diode) pixel circuit and driving method thereof Download PDF

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CN102346999B
CN102346999B CN2011101751381A CN201110175138A CN102346999B CN 102346999 B CN102346999 B CN 102346999B CN 2011101751381 A CN2011101751381 A CN 2011101751381A CN 201110175138 A CN201110175138 A CN 201110175138A CN 102346999 B CN102346999 B CN 102346999B
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transistor
scan control
control line
power supply
organic light
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CN2011101751381A
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CN102346999A (en
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朱晖
邱勇
罗红磊
高孝裕
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昆山工研院新型平板显示技术中心有限公司
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Abstract

The invention discloses an AMOLED (Active Matrix/Organic Light-Emitting Diode) pixel circuit and a driving method thereof. The AMOLED pixel circuit comprises pixel units which are distributed in an n-row, m-column matrix, the pixel units are connected with a data driver through data lines and a scanning driver through scanning lines, each pixel unit comprises an organic light-emitting diode (OLED), and n and m are natural numbers; each row pixel unit comprises a first scanning control line Sn1, a second scanning control line Sn2 and a third scanning control line Sn3; the OLED is connected between the drain of a sixth transistor T6 and a second power supply ELVSS; and each row pixel unit also comprises threshold voltage compensation transistors T4 and T8 and leakage current compensation transistors T1 and T7. By arranging the threshold voltage compensation transistors and the leakage current compensation transistors, the response characteristic of the active matrix OLED is improved, and thereby images with uniform image quality can be displayed.

Description

AMOLED image element circuit and driving method thereof

Technical field

The present invention relates to a kind of image element circuit and driving method thereof, relate in particular to a kind of AMOLED image element circuit and driving method thereof.

Background technology

In recent years, developed and compared various types of panel display apparatus that cathode-ray tube (CRT) is lightweight and volume is little.

In various types of panel display apparatus, because using self luminous Organic Light Emitting Diode (OLED), active array organic light emitting display device shows image, usually it is short to have a response time, use low-power consumption to drive, the characteristic of relatively better brightness and colour purity is so organic light-emitting display device has become the focus of display device of future generation.Organic Light Emitting Diode can use passive-matrix (PM) to drive, and also can use active matrix drive (AM).Compare PM and drive, the information capacity that the AM driving has demonstration is larger, and power consumption is lower, and device lifetime is long, the picture contrast advantages of higher, and the PM driving is applicable to cheaply, simple display device.

For large-scale active array organic light emitting display device, comprise a plurality of pixels of the intersection region that is positioned at sweep trace and data line.Each pixel comprises Organic Light Emitting Diode and is used for driving the image element circuit of described Organic Light Emitting Diode.Image element circuit generally includes switching transistor, driving transistors and holding capacitor.

The characteristic of the pixel of active matrix organic light-emitting diode is activated the impact of unfavorable factor of the leakage current of difference between transistor and switching transistor, and therefore quality uniformity and the consistance of the image by so a plurality of pixels demonstrations are relatively poor.

Fig. 1 is the circuit diagram of the conventional pixel of active array organic light emitting display device.In Fig. 1, the transistor that image element circuit 112 comprises is the PMOS transistor.

Referring to Fig. 1, the conventional pixel of active matrix organic light-emitting diode display device includes OLED OLED, has been connected to data line Dm and scan control line Sn to control the enter the palace a second time image element circuit 112 of OLED of organic light emission.

The anodic bonding of organic diode OLED is to image element circuit 112, and the negative electrode of Organic Light Emitting Diode OLED is connected to second source ELVSS.Light with brightness corresponding to the electric current that provides with image element circuit 112 is provided Organic Light Emitting Diode OLED.

When providing sweep signal to scan control line Sn, image element circuit 112 is controlled the magnitude of current of supplying with Organic Light Emitting Diode OLED corresponding to the data-signal of supplying with data line Dm.For this reason, image element circuit 112 comprises that the transistor seconds T2(that is connected between the first power supply ELVDD and Organic Light Emitting Diode OLED anode is driving transistors), be connected to that between the grid of transistor seconds T2 and data line Dm, the first transistor T1(is switching transistor) and be connected to the grid of transistor seconds T2 and the first capacitor C1 between the first power supply ELVDD, wherein the grid of the first transistor T1 is connected to scan control line Sn.

The grid of the first transistor T1 is connected to scan control line Sn, and the source electrode of the first transistor T1 (or drain electrode) is connected to data line Dm.The drain electrode of the first transistor T1 (or source electrode) is connected to the terminal of the first capacitor C1.When providing scan control signal from scan control line Sn to the first transistor T1, the first transistor T1 conducting, and be supplied to the first capacitor C1 from the data-signal of data line Dm supply.At this moment, the voltage corresponding with data-signal is stored in the first capacitor C1.

The grid of transistor seconds T2 is connected to the terminal of the first capacitor C1, and the source electrode of transistor seconds T2 is connected to the first power supply ELVDD.The drain electrode of transistor seconds T2 is connected to the anode of Organic Light Emitting Diode OLED.Transistor seconds T2 is to controlling by the electric current that Organic Light Emitting Diode OLED flows to second source ELVSS from the first power supply ELVDD, and this electric current is corresponding to the voltage that is stored in the first capacitor C1.

The connecting terminals of the first capacitor C1 is connected to the grid of transistor seconds T2, and another connecting terminals of the first capacitor C1 is connected to the first power supply ELVDD.The voltage corresponding with data-signal is charged into the first capacitor C1.

Conventional pixel shows the image with predetermined luminance, as shown in Figure 1 by control the brightness of Organic Light Emitting Diode for induced current to Organic Light Emitting Diode OLED corresponding to the voltage that is filled with in the first capacitor C1.Yet in this traditional active matrix organic light-emitting diode display device, due to the threshold voltage variation of transistor seconds T2 and the leakage current of the first transistor T1, very difficult demonstration has the image of uniform luminance.

For example in different pixels due to the difference of the threshold voltage of transistor seconds T2, make the electric current that flows through Organic Light Emitting Diode OLED when adding identical gate drive voltage inconsistent, inconsistent according to the brightness that becomes Organic Light Emitting Diode OLED, the same data-signal of each pixel response, generation has the light of different brightness, thereby is difficult to show the image with uniform luminance.

Leakage current due to the first transistor T1 causes the grid voltage of transistor seconds T2 to change for another example, cause the electric current that flows through Organic Light Emitting Diode OLED to change, the brightness of the Organic Light Emitting Diode OLED that causes changes during the fluorescent lifetime section, and causes that image quality worsens.

Summary of the invention

Technical matters to be solved by this invention is to provide a kind of AMOLED image element circuit and driving method thereof, improves the response characteristic of active matrix organic light-emitting diode, shows the image with uniform image quality.

The present invention solves the problems of the technologies described above the technical scheme that adopts to be to provide a kind of AMOLED image element circuit, comprise and be the pixel cell that the capable m column matrix of n distributes, described pixel cell is connected with data driver by data line, be connected with scanner driver by sweep trace, each pixel cell includes OLED OLED, and n, m are natural number; Wherein:

Every row pixel cell comprises the first scan control line Sn1, the second scan control line Sn2 and the 3rd scan control line Sn2; Described Organic Light Emitting Diode OLED is connected between the 6th transistor T 6 drain electrodes and second source ELVSS; Every row pixel cell also comprises:

The first transistor T1 is connected between Section Point N2 and the 7th transistor T 7 source electrodes, and its grid connects the 3rd scan control line Sn3; Transistor seconds T2 is connected between the drain electrode of data line Dm and the 3rd transistor T 3, and its grid is connected to the second scan control line Sn2; The 3rd transistor T 3 is connected between first node N1 and the 6th transistor T 6 source electrodes, and its grid is received Section Point N2; The first capacitor C1 is connected between Section Point N2 and the first power supply ELVDD;

The 4th transistor T 4 is connected between the source electrode of the grid of the 3rd transistor T 3 and the 8th transistor T 8, and its grid is connected to the second scan control line Sn2; The 5th transistor T 5 is connected between the first power supply ELVDD and first node N1, and its grid is connected to the first scan control line Sn1; The 6th transistor T 6 is connected between the 3rd transistor T 3 drain electrodes and Organic Light Emitting Diode OLED anode, and its grid is connected to the first scan control line Sn1; The 7th transistor T 7 is connected between the first transistor T1 drain electrode and the 3rd power supply ELVL, and its grid is connected to the 3rd scan control line Sn3; The 8th transistor T 8 is connected between the 4th transistor T 4 drain electrodes and first node N1, and its grid is connected to the second scan control line Sn2;

Described the 3rd power supply ELVL regulates generation in real time by external drive circuit, and the absolute value of the voltage difference of described the 3rd power supply ELVL and Section Point N2 equals the absolute value of the voltage difference of Section Point N2 and the first power supply ELVDD.

The present invention also provides a kind of above-mentioned AMOLED pixel circuit drive method for solving the problems of the technologies described above, and wherein, described method comprises the steps:

The line-scanning period of every row pixel is divided into very first time section t1, the second time period t 2 and the 3rd time period t 3;

At first, during very first time section t1, scanner driver output low level control signal to the three scan control line Sn3 open the first transistor T1 and the 7th transistor T 7, and the current potential with Section Point N2 in each frame resets to the 3rd power supply ELVL;

Thereafter, during being set to the second time period t 2 of programming time section, scanner driver output low level control signal is opened transistor seconds T2, the 8th transistor T 8 and the 4th transistor T 4 to the second scan control line Sn2; Because Section Point N2 is initialised during very first time section t1, so the 3rd transistor T 3 conductings, to the first capacitor C1 charging, the magnitude of voltage when final charging finishes is from the difference between the threshold voltage of the data-signal Vdata of data line Dm and the 3rd transistor T 3;

At last, during the 3rd time period t 3, scanner driver output low level control signal is to the first scan control line Sn1, open the 5th transistor T 5 and the 6th transistor T 6, drive current flows to second source ELVSS along the first power supply ELVDD through the path of the 5th transistor T 5, the 3rd transistor T 3, the 6th transistor T 6 and Organic Light Emitting Diode OLED, the normal luminescence display image of current line pixel.

The present invention contrasts prior art following beneficial effect: AMOLED image element circuit provided by the invention and driving method thereof, have threshold voltage compensation transistor and leakage compensated transistor by setting, thereby improve the response characteristic of active matrix organic light-emitting diode, show the image with uniform image quality.

Description of drawings

Fig. 1 is existing active matrix organic light-emitting diode pixel equivalent circuit figure;

Fig. 2 is active array organic light emitting display device structural representation of the present invention;

Fig. 3 is the pixel equivalent circuit figure of active array organic light emitting display device of the present invention;

Fig. 4 is the pixel drive signal oscillogram of active array organic light emitting display device of the present invention.

In figure:

10 display unit 20 scanner driver 30 data drivers

101 pixels

Embodiment

The invention will be further described below in conjunction with drawings and Examples.

Fig. 2 is active array organic light emitting display device structural representation of the present invention.

See also Fig. 2, active array organic light emitting display device of the present invention comprises: display unit 10, scanner driver 20 and data driver 30; Described display unit 10 comprises a plurality of pixels 101, and described a plurality of pixels 101 are with the intersection region of matrix arrangement at scan control line Sn1, Sn2 and Sn3 and data line D1 to Dm.

Each pixel 101 is connected to scan control line (for example, Sn1, Sn2 and Sn3) and data line (described data line is connected to a row pixel 101 at pixel 101 places own).For example, the pixels 101 that will be positioned at the capable and j of i row are connected to i scan control line Si1, Si2 and Si3 and j data line Dj, and i, j are natural number.

Each pixel 101 is initialised during the very first time section of scan control signal is provided at the scan control line, and the second time period of the scan control signal that provides at the scan control line of pixel 101, the data-signal that provides from data line was provided.Pixel 101 has with the corresponding brightness light of data-signal by emission and shows image during the 3rd time period, during described the 3rd time period, transit to suitable level after the scan control signal that the scan control line provides, thereby provide electric current to the Organic Light Emitting Diode that arranges in each pixel 101.

Simultaneously, display unit 10 receive from outside (for example, from power supply) provide from the first power supply ELVDD, second source ELVSS and the 3rd power supply ELVL.The first power supply ELVDD and second source ELVSS are used separately as high level voltage source and low level voltage source.The first power supply ELVDD and second source ELVSS are as the driving power of pixel 101.The 3rd power supply ELVL be used for to replenish the variation of the voltage that the 3rd transistor gate causes due to leakage current.

Scanner driver 20 results from the corresponding scan control signal of scan control signal that (for example, providing from timing control unit) is provided in the outside.To sequentially offer pixel 101 by scan control line S1 to Sn respectively by the scan control signal that scanning monitor 20 produces.

Data and the corresponding data-signal of data controlling signal that (for example, providing from timing control unit) is provided with the outside is provided data driver 30.To synchronously offer pixel 101 by data line D1 to Dm with sweep signal by the data-signal that data driver 30 produces.

Fig. 3 is the pixel equivalent circuit figure of active array organic light emitting display device of the present invention.

Please continue with reference to Fig. 3, the pixel 101 of the embodiment of the present invention comprises: Organic Light Emitting Diode OLED is connected between the first power supply ELVDD and second source ELVSS; The first transistor T1 and the 7th transistor T 7, during scan control signal offered the scan control line Sn3 time period, described the first transistor T1 and the 7th transistor T 7 offered Section Point N2 with the 3rd supply voltage ELVL; Pixel-driving circuit is connected between the first power supply ELVDD and Organic Light Emitting Diode, and being used for provides drive current to Organic Light Emitting Diode OLED.

During scan control signal is offered the time period of scan control line Sn3, the first transistor T1 and the 7th transistor T 7 conductings, thus the voltage of the 3rd power supply ELVL is offered Section Point N2.

That is, the first transistor T1 and the 7th transistor T 7 provide constant voltage to Section Point N2 during the initialization time of pixel 101 section.In the embodiment of the demonstration in Fig. 3, resetting voltage is set to the 3rd power supply ELVL.

Transistor seconds T2 is connected between the drain electrode of data line Dm and the 3rd transistor T 3, and the grid of transistor seconds T2 is connected to scan control line Sn2.Scan control signal is being offered the time period of scan control line Sn2, transistor seconds T2 conducting, thus will offer from the data-signal that data line Dm provides pixel 101.

The 3rd transistor T 3 is connected between first node N1 and the 6th transistor T 6, and the grid of the 3rd transistor T 3 is connected to Section Point N2.The 3rd transistor T 3 is controlled from the data-signal that provides with transistor seconds T2 and flow to accordingly the amplitude of the drive current of Organic Light Emitting Diode OLED during the fluorescent lifetime section of pixel 101.

The 4th transistor T 4 is connected between the source electrode and Section Point N2 of the 8th transistor T 8, and the grid of the 4th transistor T 4 is connected to scan control line Sn2.During scan control signal is offered the time period of scan control line Sn2, the 4th transistor T 4 and the 8th common conducting of transistor T 8, thus the source electrode of the 3rd transistor T 3 is connected with Section Point N2.

The 5th transistor T 5 is connected between the first power supply ELVDD and first node N1, and the grid of the 5th transistor T 5 is connected to scan control line Sn1.When the scan control signal that provides from the scan control line transits to low level, the 5th transistor T 5 conductings, the source electrode of the 3rd transistor T 3 is connected to the first power supply ELVDD.

The 6th transistor T 6 is connected between the 3rd transistor T 3 and Organic Light Emitting Diode OLED.The grid of the 6th transistor T 6 connects scan control line Sn1.The high level scan control signal is being offered the time period of scan control line Sn1, the 6th transistor T 6 cut-offs, thus can prevent that drive current is provided for Organic Light Emitting Diode OLED.During scan control signal transits to low level fluorescent lifetime section, the 6th transistor T 6 conductings, thus the 3rd transistor is connected to Organic Light Emitting Diode OLED, and the 3rd transistor T 3 offers the Organic Light Emitting Diode drive current.

The 7th transistor T 7 provides constant voltage by the first transistor T1 to Section Point N2 during the initialization time of pixel 101 section.The 7th transistor T 7 is connected between the first transistor T1 and the 3rd power supply ELVL, the grid of the 7th transistor T 7 is connected to the 3rd scan control signal Sn3, when the scan control signal that provides from scan control line Sn3 transits to low level, the 7th transistor T 7 conductings, the first transistor T1 is connected to the 3rd power supply ELVL, in the embodiment of the demonstration in Fig. 3, resetting voltage is set to the 3rd power supply ELVL.

The 8th transistor T 8 is connected between the drain electrode and first node N1 of the 4th transistor T 4, and the grid of the 8th transistor T 8 is connected to scan control line Sn2.During scan control signal being offered the scan control line Sn2 time period, the 4th transistor T 4 and the 8th common conducting of transistor T 8, thus the source electrode of the 3rd transistor T 3 is connected with Section Point N2.

The first capacitor C1 is connected between Section Point N2 and the first power supply ELVDD.During scan control signal being offered the scan control line Sn3 time period, provide the 3rd supply voltage ELVL to come initialization the first capacitor C1 by the first transistor T1 and the 7th transistor T 7.Thereafter, during scan control signal being offered the scan control line S2 time period, will with through transistor seconds T2, the corresponding store voltages of data-signal that the 3rd transistor T 3, the eight transistor Ts 8 and the 4th transistor T 4 provide is in the first capacitor C1.

Organic Light Emitting Diode OLED is connected between image element circuit 112 and second source ELVSS.During the fluorescent lifetime section of pixel 101, Organic Light Emitting Diode OLED will launch and the corresponding light of drive current that provides through the first power supply ELVDD, the 5th transistor T 5, the 3rd transistor T 3 and the 6th transistor T 6.

In pixel 101, inconsistent due to driving transistors (for example, the 3rd transistor T 3) threshold voltage, the electric current that causes flowing through Organic Light Emitting Diode OLED is inconsistent.The consistance meeting variation of pixel 101 brightness, the quality of image can be inhomogeneous.

Be provided with the 4th transistor T 4 and the 8th transistor T 8, be used for the variation of the threshold voltage of compensation for drive transistor (for example, the 3rd transistor T 3) during the initialization time of each frame section, prevent above-described problem.

In pixel 101, leakage current due to the 4th transistor T 4 and the 8th transistor T 8, Section Point N2 voltage voltage during the fluorescent lifetime section of each frame changes, concretely, the electric current of the first power supply ELVDD is through the 4th transistor T 4 and the 8th transistor T 8, flow into Section Point N2, make the voltage of the first capacitor C1 storage raise, thereby the electric current that causes flowing through Organic Light Emitting Diode OLED changes.The stability meeting variation of pixel 101 brightness, image flicker is serious.

Be provided with the first transistor T1 and the 7th transistor T 7 with the 4th transistor T 4 and the 8th transistor T 8 symmetries, and tertiary voltage source ELVL, be used for compensating the leakage current of the 4th transistor T 4 and the 8th transistor T 8 during the fluorescent lifetime section of each frame, prevent above-described problem.The 4th transistor T 4, the 8th transistor T 8 and the first transistor T1 and the 7th transistor T 7 are on all four; The first transistor T1 and the 7th transistor T 7 can reduce the rising of the first capacitor stores voltage of causing through the leakage current that the first power supply ELVDD, the 4th transistor T 4 and the 8th transistor T 8 flow into.The voltage of the 3rd power supply ELVL is lower than the voltage of Section Point N2, and voltage difference is VD1; The voltage of the first power supply ELVDD is higher than the voltage of Section Point N2, and voltage difference is VD2; VD1 equals VD2, thereby makes the leakage current that flows into Section Point N2 by the first power supply ELVDD, the 4th transistor T 4 and the 8th transistor T 8 equal to flow out by the 3rd power supply ELVL, the first transistor T1 and the 7th transistor T 7 leakage current of Section Point N2.Thereby improved the characteristic of the flicker of pixel 101, and shown the image with equilibrium figures image quality.

Fig. 4 is the pixel drive signal oscillogram of active array organic light emitting display device of the present invention.

Please continue with reference to Fig. 4, line-scanning period of every row pixel is divided into very first time section t1, the second time period t 2 and the 3rd time period t 3, time period t 0 is switching interval, avoids the circuit sequence conflict, and duty makes a mistake.During being set to the very first time section t1 of initialization time section, at first low level scan control signal Sn3 is offered pixel 101; Therefore, the first transistor T1 and the conducting by low level scan control signal Sn3 of the 7th transistor T 7.Thereby the voltage of the 3rd power supply ELVL is provided for Section Point N2; Here, the 3rd power supply ELVL is designed to the desired value during every frame fluorescent lifetime section lower than Section Point N2, makes the absolute value of the voltage difference of the 3rd power supply ELVL and Section Point N2 equal the absolute value of the voltage difference of Section Point N2 and the first power supply ELVDD; Described the 3rd power supply ELVL regulates generation (0V for example in real time by external drive circuit, can adopt existing various real-time regulating circuits, identical with the mode that produces ELVDD and ELVSS voltage signal, the type of adoptable power supply chip comprises the chip that boosts, the step-down chip, the voltage reversal chip, the DC-DC converter, LDO etc., when active array organic light emitting display device dispatches from the factory, or carry out as required in use for some time adjustment, describe in detail no longer one by one at this), the first power supply ELVDD is high level 5V, and second source ELVSS is low level-5V.

In the embodiments of the invention that show in Fig. 3, during very first time section t1, can the voltage of the 3rd power supply ELVL be offered Section Point N2 as resetting voltage by the first transistor T1 and the 7th transistor T 7, thereby Section Point N2 can be reset to the 3rd power supply ELVL consistently in each frame.

Be set to second time period t 2 of programming time section during, low level scan control signal Sn2 offered pixel 101 thereafter; Then, transistor seconds T2, the 8th transistor T 8 and the 4th transistor T 4 respond low level scan control signal Sn2 and conducting; The 3rd transistor T 3 conductings that connect with the 4th transistor T 4 and by diode by the 8th transistor T 8 (when the 8th transistor T 8 and the 4th transistor T 4 conducting, the 3rd transistor T 3 conductings, equivalence are a diode current flow job); Because Section Point N2 is initialised during very first time section t1, so the 3rd transistor T 3 is connected by diode at forward (source electrode or the drain electrode that are connected with high level the first power supply ELVDD).

The data-signal Vdata that therefore, will offer data line Dm through transistor seconds T2, the 8th transistor T 8 and the 4th transistor T 4 offers Section Point N2; At this moment, because the 3rd transistor T 3 is connected by diode, so and the corresponding voltage of difference between the threshold voltage of data-signal Vdata and the 3rd transistor T 3 be provided for Section Point N2; The voltage that offers Section Point N2 charges to the first capacitor C1.

Thereafter, during being set to the 3rd time period t 3 of fluorescent lifetime section, scan control signal Sn1 transits to low level; Then, the 5th transistor T 5 and the 6th transistor T 6 conducting by scan control signal Sn1; Therefore, drive current flows to second source ELVSS along the first power supply ELVDD through the path of the 5th transistor T 5, the 3rd transistor T 3, the 6th transistor T 6 and Organic Light Emitting Diode OLED.

Here, the 3rd transistor T 3 in response to the corresponding store voltages of the threshold voltage that offers the 3rd transistor T 3 in the first capacitor C1, so the threshold voltage for the 3rd transistor T 3 compensates during the 3rd time period t 3.

In sum, AMOLED pixel provided by the invention (for example has the threshold voltage compensation transistor, the 4th transistor T 4 and the 8th transistor T 8), described threshold voltage compensation transistor stores the information of threshold voltage into first capacitor C1 at start time section t1, thereby improve the light characteristic of pixel, can show the image with balanced picture quality; Each pixel (for example has the leakage compensated transistor, the first transistor T1 and the 7th transistor T 7), described leakage compensated transistor be used for the glow phase t3 of pixel compensation due to the threshold voltage compensation transistor (for example, the 4th transistor T 4 and the 8th transistor T 8) the driving transistors that causes of leakage current (for example, the variation of grid voltage the 3rd transistor T 3), thereby can improve the blinking characteristic of pixel, show the image with low scintigram image quality.

Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can do a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.

Claims (2)

1. AMOLED image element circuit, comprise being the pixel cell that the capable m column matrix of n distributes, described pixel cell is connected with data driver by data line, is connected with scanner driver by sweep trace, each pixel cell includes OLED (OLED), and n, m are natural number; It is characterized in that:
Every row pixel cell comprises the first scan control line (Sn1), the second scan control line (Sn2) and the 3rd scan control line (Sn3); Described Organic Light Emitting Diode (OLED) is connected between the 6th transistor (T6) drain electrode and second source (ELVSS);
Every row pixel cell also comprises:
The first transistor (T1) is connected between Section Point (N2) and the 7th transistor (T7) source electrode, and its grid connects the 3rd scan control line (Sn3); Transistor seconds (T2) is connected between the drain electrode of data line (Dm) and the 3rd transistor (T3), and its grid is connected to the second scan control line (Sn2); The 3rd transistor (T3) is connected between first node (N1) and the 6th transistor (T6) source electrode, and its grid is received Section Point (N2); The first capacitor (C1) is connected between Section Point (N2) and the first power supply (ELVDD);
The 4th transistor (T4) is connected between the source electrode of the grid of the 3rd transistor (T3) and the 8th transistor (T8), and its grid is connected to the second scan control line (Sn2); The 5th transistor (T5) is connected between the first power supply (ELVDD) and first node (N1), and its grid is connected to the first scan control line (Sn1); The 6th transistor (T6) is connected between the 3rd transistor (T3) drain electrode and Organic Light Emitting Diode (OLED) anode, and its grid is connected to the first scan control line (Sn1); The 7th transistor (T7) is connected between the first transistor (T1) drain electrode and the 3rd power supply (ELVL), and its grid is connected to the 3rd scan control line (Sn3); The 8th transistor (T8) is connected between the 4th transistor (T4) drain electrode and first node (N1), and its grid is connected to the second scan control line (Sn2);
Described the 3rd power supply (ELVL) is regulated generation in real time by external drive circuit, and the absolute value of the voltage difference of described the 3rd power supply (ELVL) and Section Point (N2) equals the absolute value of the voltage difference of Section Point (N2) and the first power supply (ELVDD).
2. an AMOLED pixel circuit drive method as claimed in claim 1, is characterized in that, described method comprises the steps:
The line-scanning period of every row pixel is divided into very first time section t1, the second time period t 2 and the 3rd time period t 3;
At first, during very first time section t1, scanner driver output low level control signal to the three scan control lines (Sn3) are opened the first transistor (T1) and the 7th transistor (T7), and the current potential with Section Point (N2) in each frame resets to the 3rd power supply (ELVL);
Thereafter, during being set to the second time period t 2 of programming time section, scanner driver output low level control signal is opened transistor seconds (T2), the 8th transistor (T8) and the 4th transistor (T4) to the second scan control line (Sn2); Because Section Point (N2) is initialised during very first time section t1, so the 3rd transistor (T3) conducting, to the first capacitor (C1) charging, the magnitude of voltage when final charging finishes is from the difference between the threshold voltage of the data-signal (Vdata) of data line (Dm) and the 3rd transistor (T3);
At last, during the 3rd time period t 3, scanner driver output low level control signal is to the first scan control line (Sn1), open the 5th transistor (T5) and the 6th transistor (T6), drive current flows to second source (ELVSS) along the first power supply (ELVDD) through the path of the 5th transistor (T5), the 3rd transistor (T3), the 6th transistor (T6) and Organic Light Emitting Diode (OLED), the normal luminescence display image of current line pixel.
CN2011101751381A 2011-06-27 2011-06-27 AMOLED (Active Matrix/Organic Light-Emitting Diode) pixel circuit and driving method thereof CN102346999B (en)

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