CN102332513A - White light-emitting diode (LED) epitaxial chip packaging structure - Google Patents
White light-emitting diode (LED) epitaxial chip packaging structure Download PDFInfo
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- CN102332513A CN102332513A CN201110324177A CN201110324177A CN102332513A CN 102332513 A CN102332513 A CN 102332513A CN 201110324177 A CN201110324177 A CN 201110324177A CN 201110324177 A CN201110324177 A CN 201110324177A CN 102332513 A CN102332513 A CN 102332513A
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Abstract
The invention provides a white light-emitting diode (LED) epitaxial chip packaging structure, which has high color rendering property and stability and can be subjected to mass production on a production line. The invention provides a white LED epitaxial structure, a white LED epitaxial process, a white LED chip structure, a white LED chip process, a white LED packaging structure and a white LED packaging process simultaneously. The white LED epitaxial structure comprises a ZnSe substrate, an N-ZnSe contact layer, a CdZnSe blue light-emitting layer and a P+ZnSe contact layer from bottom to top in turn. The white LED chip structure comprises an N electrode, a ZnSe substrate, an N-ZnSe contact layer, a CdZnSe blue light-emitting layer, a P+ZnSe contact layer and a P electrode from bottom to top in turn. The white LED packaging structure comprises a bracket, a silver colloid, a chip, a gold wire and silica gel from bottom to top in turn.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, specifically, relate to epitaxial structure, chip structure and the encapsulating structure of white light LEDs.
Background technology
White light LEDs have energy-saving and environmental protection, life-span long, can be operated in plurality of advantages such as fast state, its purposes is more and more wider, government just widelys popularize.At present, adopt blue-ray LED to excite yellow fluorescent powder to produce white light LEDs usually, owing to the white light LEDs that excites yellow fluorescent powder to produce with blue-ray LED, poor, the poor stability of color rendering.
The color developing that how to improve existing white light LEDs is just becoming the current problem that everybody is concerned about the most with stability.
Summary of the invention
Technical problem to be solved by this invention provides white light LEDs extension chip-packaging structure, and its color rendering is good, good stability, but produces in enormous quantities on this white light LEDs extension Chip Packaging production line.
For solving the problems of the technologies described above, technical scheme of the present invention is:
A kind of fluorescent material that need not to use is provided, and color rendering is good, the white light LEDs extension chip-packaging structure of good stability.The present invention provides white light LEDs epitaxial structure and technology, White-light LED chip structure and technology, White-light LED package structure and technology simultaneously.
White light LEDs epitaxial structure of the present invention comprises ZnSe substrate, N-ZnSe contact layer, CdZnSe blue light-emitting and the P+ZnSe contact layer that sets gradually from bottom to up
White-light LED chip structure of the present invention comprises it being N electrode, ZnSe substrate, N-ZnSe contact layer, CdZnSe blue light-emitting, P+ZnSe contact layer, P electrode from bottom to up successively.
White-light LED package structure of the present invention comprises it being support, elargol, chip, gold thread, silica gel from bottom to up successively.
Preferably, the thickness of said ZnSe substrate is that the thickness of 50～200um, N-ZnSe contact layer is that the thickness of 200～1000nm, CdZnSe blue light-emitting is that the thickness of 1000～10000nm, P-ZnSe contact layer is 80～600nm.
Preferably, the thickness of said P electrode is 1～10um, and the spun gold diameter is 20～100um.
Technical scheme of the present invention is that elder generation forms the CdZnSe film on the ZnSe monocrystal substrate, makes film send blue light after the energising, and the blue light of part and substrate produce chain reaction simultaneously, send gold-tinted, and blue at last, gold-tinted forms complementary colours and sends white light.Because also be to adopt single LEDs crystal grain, its operating voltage is 2.7V only, and is lower than the LED 3.5V of GaN, and do not need phosphor substance just can send white light.Therefore general expectation will have more the advantage on the price than GaN white light LEDs; Color rendering is good, good stability, luminous mass are good; Improved job stability and useful life, reduced packaging process, extension, chip, the encapsulation of white light LEDs, the production technology of application whole industry chain are simplified; Production efficiency is high, is suitable for producing in enormous quantities.
Production technology of the present invention is the ZnSe monocrystal substrate that is ready to clean, and carries out according to the following step successively then:
Elder generation's growth epitaxial wafer
(a) the ZnSe monocrystal substrate is placed on sends into epitaxial furnace in the pallet, at 1055～1065 degrees centigrade of growth N-ZnSe contact layers down;
(b) next be carrier, at 685～695 degrees centigrade of CdZnSe blue light-emittings of growing down with nitrogen;
(c) afterwards at 995～1005 degrees centigrade of P-ZnSe contact layers of growing down.
Make chip again
The P electrode is done in the epitaxial wafer P-ZnSe contact layer top that growth is good, and the N electrode is done in the below of N-ZnSe contact layer.
At last with ready-made Chip Packaging
The chip of making is pasted on support through insulating cement with automatically solid brilliant machine, send into the baking oven of 175 degree, toasted 1 hour; Take out the back and carry out bonding wire, prepare silica gel DOW CORNING 6551 afterwards with automatic bonding equipment, exhaust vacuum after; After having put glue with the automatically dropping glue machine, sent into 150 curing oven 1 hour, through spectrophotometric test; The packing warehouse-in, encapsulating products has just been made.
Production technology efficient of the present invention is high, need not special installation, and the quality of production is reliable and stable, and industrial mass production is easy to realize.
Further specify the present invention below in conjunction with accompanying drawing and embodiment.
Description of drawings: Fig. 1 is the main sketch map of the epitaxial structure among the embodiment.
Fig. 2 is the main sketch map of the chip structure among the embodiment.
Fig. 3 is the sketch map of encapsulating structure.
Embodiment:
As shown in Figure 1, the epitaxial structure of present embodiment sets gradually ZnSe substrate 1, N-ZnSe contact layer 2, CdZnSe blue light-emitting 3, P-ZnSe contact layer 4 from bottom to up.
As shown in Figure 2, the chip structure of present embodiment sets gradually N electrode 6, ZnSe substrate 1, N-ZnSe contact layer 2, CdZnSe blue light-emitting 3, P-ZnSe contact layer 4, P electrode 5 from bottom to up.
As shown in Figure 3, the encapsulating structure of present embodiment comprises it being support 7, elargol 8, chip 9, gold thread 10, silica gel 11 from bottom to up successively, and its medium-height trestle 7 comprises stent electrode 12.
The thickness of ZnSe substrate is that the thickness of 50～200um, N-ZnSe contact layer is that the thickness of 200～1000nm, CdZnSe blue light-emitting is that the thickness of 1000～10000nm, P-ZnSe contact layer is 80～600nm in the present embodiment.
The thickness of P electrode is 1～10um, and the spun gold diameter is 20～100um.
Preferred version is that the thickness of ZnSe substrate is that the thickness of 100um, N-ZnSe contact layer is that the thickness of 600nm, CdZnSe blue light-emitting is that the thickness of 5000nm, P-ZnSe contact layer is 300nm.
The thickness of P electrode is 2um, and the spun gold diameter is 30um.
The production technology of the epitaxial structure in the present embodiment is the ZnSe substrate 1 that is ready to clean, and carries out according to the following step successively then:
Earlier ZnSe substrate 1 is placed on and sends into K465i MOCVD epitaxial furnace in the pallet, at 1050 degrees centigrade of N-GaN contact layers 2 of growing down; Next be carrier with nitrogen, at 680 degrees centigrade of CdZnSe blue light-emittings 3 of growing down, at 990 degrees centigrade of P-GaN contact layers 4 of growing down, epitaxial wafer has just been worked it out so afterwards.
Again with the epitaxial wafer of making; Be processed into chip; According to following chip technology flow process, epitaxial wafer → cleaning → plating transparent electrode layer → transparency electrode figure photoetching → corrode → remove photoresist → platform graphics photoetching → dry etching → remove photoresist → anneal → SiO2 deposition → graph window photoetching → SiO2 corrodes → removes photoresist → N utmost point figure photoetching → prerinse → plated film → peel off → anneal → P utmost point figure photoetching → plated film → peel off → grind → cut → chip → finished product test.The P electrode is done in P-ZnSe contact layer top, and the N electrode is done in the below of N-ZnSe contact layer.Chip has just processed.
At last with ready-made Chip Packaging
The chip of making is pasted on support through insulating cement with automatically solid brilliant machine, send into the baking oven of 175 degree, toasted 1 hour; Take out the back and carry out bonding wire, prepare silica gel DOW CORNING 6551 afterwards with automatic bonding equipment, exhaust vacuum after; After having put glue with the automatically dropping glue machine, sent into 150 curing oven 1 hour, through spectrophotometric test; The packing warehouse-in, encapsulating products has just been made.
Claims (7)
1. white light LEDs extension chip-packaging structure comprises white light LEDs epitaxial structure, White-light LED chip structure, White-light LED package structure.It is characterized in that: said white light LEDs epitaxial structure comprises ZnSe substrate, N-ZnSe contact layer, CdZnSe blue light-emitting and the P+ZnSe contact layer that sets gradually from bottom to up
Said White-light LED chip structure comprises it being N electrode, ZnSe substrate, N-ZnSe contact layer, CdZnSe blue light-emitting, P+ZnSe contact layer, P electrode from bottom to up successively.
Said White-light LED package structure comprises it being support, elargol, chip, gold thread, silica gel from bottom to up successively.
2. white light LEDs extension chip-packaging structure as claimed in claim 1 is characterized in that: the thickness of said ZnSe substrate is 50～200um.
3. white light LEDs extension chip-packaging structure as claimed in claim 1 is characterized in that: the thickness of said N-ZnSe contact layer is 200～1000nm.
4. white light LEDs extension chip-packaging structure as claimed in claim 1 is characterized in that: the thickness of said CdZnSe blue light-emitting is 1000～10000nm.
5. white light LEDs extension chip-packaging structure as claimed in claim 1 is characterized in that: the thickness of said P-ZnSe contact layer is 80～600nm.
6. white light LEDs extension chip-packaging structure as claimed in claim 1 is characterized in that: the thickness of said P electrode is 1～10um.
7. white light LEDs extension chip-packaging structure as claimed in claim 1 is characterized in that: said spun gold diameter is 30um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110324177A CN102332513A (en) | 2011-10-21 | 2011-10-21 | White light-emitting diode (LED) epitaxial chip packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110324177A CN102332513A (en) | 2011-10-21 | 2011-10-21 | White light-emitting diode (LED) epitaxial chip packaging structure |
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| CN102332513A true CN102332513A (en) | 2012-01-25 |
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| CN201110324177A Pending CN102332513A (en) | 2011-10-21 | 2011-10-21 | White light-emitting diode (LED) epitaxial chip packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584699A (en) * | 2020-05-15 | 2020-08-25 | 盐城东山精密制造有限公司 | LED package body surface laser processing system and packaging method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745866A (en) * | 1993-08-02 | 1995-02-14 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element |
| CN1241821A (en) * | 1998-07-09 | 2000-01-19 | 住友电气工业株式会社 | White color light emitting diode and neutral color light emitting diode |
| CN1532953A (en) * | 2003-03-25 | 2004-09-29 | 威凯科技股份有限公司 | White light-emitting diode element |
| CN202352720U (en) * | 2011-10-21 | 2012-07-25 | 西安重装渭南光电科技有限公司 | Packaging structure for white LED (Light-emitting diode) extension chip |
-
2011
- 2011-10-21 CN CN201110324177A patent/CN102332513A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745866A (en) * | 1993-08-02 | 1995-02-14 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element |
| CN1241821A (en) * | 1998-07-09 | 2000-01-19 | 住友电气工业株式会社 | White color light emitting diode and neutral color light emitting diode |
| CN1532953A (en) * | 2003-03-25 | 2004-09-29 | 威凯科技股份有限公司 | White light-emitting diode element |
| CN202352720U (en) * | 2011-10-21 | 2012-07-25 | 西安重装渭南光电科技有限公司 | Packaging structure for white LED (Light-emitting diode) extension chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584699A (en) * | 2020-05-15 | 2020-08-25 | 盐城东山精密制造有限公司 | LED package body surface laser processing system and packaging method |
| CN111584699B (en) * | 2020-05-15 | 2021-09-10 | 盐城东山精密制造有限公司 | LED package surface laser processing system and LED packaging method |
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Application publication date: 20120125 |