CN102331297A - Ling intensity detection method and light intensity detection circuit - Google Patents
Ling intensity detection method and light intensity detection circuit Download PDFInfo
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- CN102331297A CN102331297A CN2010102251646A CN201010225164A CN102331297A CN 102331297 A CN102331297 A CN 102331297A CN 2010102251646 A CN2010102251646 A CN 2010102251646A CN 201010225164 A CN201010225164 A CN 201010225164A CN 102331297 A CN102331297 A CN 102331297A
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Abstract
The invention relates to a light intensity detection method and a light intensity detection circuit. According to the method, photo-generated current generated by a photographic module is amplified and is used for controlling the frequency of an oscillator, thereby the change of the photo-generated current is converted into change of the output frequency of the oscillator; and the strength of light can be detected by only detecting the output frequency of the oscillator, so that the light intensity can be detected more simply and conveniently. In addition, the light intensity detection circuit adopting the light intensity detection method comprises the photo-generated module, a current amplifying and comparing module and the oscillator; and the circuit has the advantages of more simplified structure, reduced power consumption and reduced chip area occupied by the circuit.
Description
Technical field
The present invention relates to electronic applications, relate in particular to a kind of light intensity detection method and light intensity testing circuit.
Background technology
Present smart card or double-interface card development are more and more rapider, and for the purpose of safety, the light context of detection has also proposed requirement.Portable product is considered from the display screen power saving, also need be detected light intensity.Present light intensity detects implementation has two big types: one type is after adopting the photodiode sensed light signal, to produce electric current, detects light intensity through the electric current manner of comparison; Another kind of is after adopting the photodiode sensed light signal, to produce electric current, and the mode that converts voltage through current flowing resistance into detects light intensity.Fig. 1 is a kind of light intensity testing circuit of the prior art.As shown in Figure 1, this light intensity testing circuit comprises photodiode D, current/voltage-converted circuit and ADC (analog to digital conversion) change-over circuit that links to each other in order.
There is following problem in present existing light intensity detection scheme:
1) adopt current ratio method to detect light intensity, need many reference current options, sacrifice many power consumptions, and the realization more complicated of control circuit;
2) adopt electric current to change voltage method and detect light intensity; Because the current ratio that photoinduction produces is less; Produce the bigger voltage that is used to detect, need amplify electric current, also need electric current to flow through bigger resistance simultaneously; The more power consumption of meeting consumption rate also can take bigger chip area simultaneously like this;
3) adopt independent light sensitive diode to realize that light intensity detects or special sensor devices, cost is compatible more poor than higher or technology.
Summary of the invention
Technical matters to be solved by this invention is that the method that provides a kind of light intensity to detect makes that the light intensity detection is more simple and convenient; And adopt the light intensity testing circuit of this kind light intensity detection method; Circuit structure is more simplified, and power consumption reduces, and reduces the shared chip area of circuit.
A kind of light intensity detection method provided by the invention, specific as follows, this method comprises:
Steps A: through the illuminant module sensed light signal and produce electric current;
Step B: with the Control current of said electric current, with the frequency of control generator output as oscillator;
Step C: gather the frequency of oscillator output, thereby obtain the Strength Changes of light signal according to the frequency of oscillator output.
It is more simple and convenient to adopt above-mentioned light intensity detection method to make that light intensity detects, and adopts the light intensity testing circuit of this kind light intensity detection method, and circuit structure is more simplified, and power consumption reduces, and reduces the shared chip area of circuit.This method can better be applicable to some compact apparatus or portable equipment.
Further; Also comprise among the said step B: the electric current that at first said illuminant module sensed light signal is produced amplifies; Compare with a reference current again and subtract each other or addition, the electric current that obtains to produce with said sensed light signal be inversely proportional to or the electric current of direct ratio after, remake Control current into oscillator.
Further, in said step C: at first preset at least one frequency the frequency that collects is compared with this frequency preset threshold value, thereby whether the Strength Changes of judging light signal reaches preset range as threshold value.Above-mentioned frequency as threshold value can for example, can be to distinguish for a plurality of: high light, medium light intensity, the low light level, 4 frequency threshold such as unglazed.Described each frequency threshold both can be a concrete frequency numerical value, also can be the numerical range of a frequency, with fluctuation that adapts to frequency or the needs that accurately measure.
Further, be through gathering the clock number that oscillator is exported in the set time among the said step C, to obtain change of frequency.
The present invention also provides a kind of light intensity testing circuit that adopts above-mentioned light intensity detection method, and this light intensity testing circuit comprises:
Illuminant module, electric current amplification and the comparison module, the oscillator that link to each other in order, wherein,
Said illuminant module is used for induction light according to producing photogenerated current;
Said electric current amplifies and comparison module, is used for that said photogenerated current is amplified the back and compares with reference current and subtract each other/addition, obtains to be inversely proportional to said photogenerated current/Control current of direct ratio;
Said oscillator is used to produce the clock signal that output frequency receives said Control current control.
Light intensity testing circuit provided by the invention has been simplified circuit structure, has reduced power consumption, and has reduced the shared chip area of circuit.Adopt above-mentioned light intensity testing circuit, more help the miniaturization of product structure, more be applicable in the portable equipment, be applicable to that perhaps those need in light intensity testing circuit volume is littler, energy consumption the is lower equipment.
Further, said illuminant module is made up of PMOS pipe P1 and light sensitive diode D1, and source electrode and substrate that PMOS manages P1 meet power vd D, and drain and gate is continuous and be connected in A point, the plus earth of light sensitive diode D1 with the negative pole of light sensitive diode D1.
Further, light sensitive diode D1 is the PNP pipe/NPN pipe of emitter and collector short circuit.
Further, said electric current amplify and comparison module by PMOS manage P2, PMOS pipe P3, PMOS pipe P4, PMOS pipe P5 and NMOS pipe N1, NMOS pipe N2, NMOS pipe N3, NMOS pipe N4 forms;
Source electrode and the substrate of PMOS pipe P2 meet power vd D, and the drain electrode of grid and PMOS pipe P1 is connected in the A point, and drain electrode is connected in the B point with the drain and gate of NMOS pipe N1, source electrode and the substrate ground connection of NMOS pipe N1;
Source electrode and the substrate ground connection of NMOS pipe N2, grid is connected with the grid of NMOS pipe N1, and drain electrode is connected in the C point with the drain and gate of PMOS pipe P3;
Source electrode and the substrate of PMOS pipe P3 meet power vd D, and grid links to each other with the grid of PMOS pipe P4;
Source electrode and the substrate of PMOS pipe P4 meet power vd D, and drain electrode is connected in the D point with the drain and gate of PMOS pipe P5;
Source electrode and the substrate of PMOS pipe P5 meet power vd D, and the grid of PMOS pipe P5 links to each other with the bias current Ibias end of said oscillator;
Source electrode and the substrate ground connection of NMOS pipe N3, drain electrode is connected in the D point with the drain electrode of PMOS pipe P4, and grid links to each other with the grid of NMOS pipe N4, source electrode and the substrate ground connection of NMOS pipe N4, grid links to each other with drain electrode, and flows through reference current Iref in the drain electrode.
Further, the ring oscillator of said oscillator for being composed in series by 2N+1 level phase inverter, wherein N is more than or equal to 1.
Further, said phase inverter is managed P1a, PMOS pipe P1b by PMOS and NMOS pipe N1a forms;
Source electrode and the substrate of PMOS pipe P1a connect power supply (VDD), and grid connects bias current (Ibias) end, and drain electrode connects the source electrode of PMOS pipe P1b;
The grid of PMOS pipe P1b links to each other with the grid of NMOS pipe N1a, and as the input end of phase inverter, the drain electrode of PMOS pipe P1b links to each other with the drain electrode of NMOS pipe N1a, as the output terminal of phase inverter, and the source ground of NMOS pipe N1a.
Further, said phase inverter is managed P1a, PMOS pipe P1b by PMOS and NMOS pipe N1a, NMOS electric capacity N1b form;
Source electrode and the substrate of PMOS pipe P1a connect power supply (VDD), and grid connects bias current (Ibias) end, and drain electrode connects the source electrode of PMOS pipe P1b;
The grid of PMOS pipe P1b links to each other with the grid of NMOS pipe N1a, and as the input end of phase inverter, the drain electrode of PMOS pipe P1b links to each other with the drain electrode of NMOS pipe N1a, as the output terminal of phase inverter, and the source ground of NMOS pipe N1a;
The grid of NMOS electric capacity N1b connects output terminal, source electrode and the grounded drain of phase inverter.
The present invention also provides a kind of measuring method of the frequency threshold to above-mentioned each light intensity testing circuit, and this method comprises: select the illuminant module at least a predetermined this light intensity testing circuit of illuminated; Gather the frequency of said oscillator output; The frequency of said output is made the decision gate limit value of this light intensity testing circuit under the predetermined light intensity of this kind.
Adopt the measuring method of above-mentioned threshold value, can revise the deviation of technology flexibly.Solve because process deviation causes the inaccurate or inaccurate error that causes of output frequency of output current easily.Adopt different predetermined light intensity to shine, just can obtain decision gate limit value or decision gate limits under the different light intensity.
Description of drawings
Fig. 1 is a kind of light intensity testing circuit of the prior art;
Fig. 2 is the theory diagram of light intensity testing circuit in the embodiment of the invention;
Fig. 3 is a kind of physical circuit figure of light intensity testing circuit in the embodiment of the invention;
Fig. 4 is a kind of physical circuit figure of oscillator in the embodiment of the invention;
Fig. 5 is two kinds of physical circuit figure of phase inverter among Fig. 4.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Main design of the present invention is; Photogenerated current through producing photodiode amplifies; Bias current size with the indirect control generator OSC of this photogenerated current; Thereby make the variation of photogenerated current change into the change of frequency of oscillator OSC output, therefore only need the variation of the output frequency of detection oscillator OSC, just can detect light intensity.This method is fairly simple, has avoided complicated ADC testing circuit, and has reduced the demand to chip area and power consumption.
Fig. 2 is the theory diagram of light intensity testing circuit in the embodiment of the invention.As shown in Figure 2, in the embodiment of the invention, the light intensity testing circuit comprises that the illuminant module 100, the electric current that link to each other in order amplify and comparison module 200 and oscillator OSC300, and wherein, illuminant module 100 is used for induction light according to producing photogenerated current; Electric current amplifies and comparison module 200 is used for that photogenerated current is amplified the back and compares with reference current and subtract each other/addition, obtains to be inversely proportional to photogenerated current/Control current of direct ratio; Oscillator OSC300 is used to produce the clock signal of the controlled Current Control of output frequency.
The course of work in the face of light intensity testing circuit of the present invention describes down: at first illuminant module 100 induction lights are according to producing photogenerated current Ip; Then electric current amplification and 200 couples of photogenerated current Ip of comparison module amplify; Compare with the accurate electric current of a roadbed again and subtract each other (or addition); Obtain one the tunnel with the be inversely proportional to electric current of (or direct ratio) of photogenerated current Ip, adopt this road electric current to control the oscillator OSC300 that an output frequency receives bias current control, produce the clock that receives photogenerated current control thus.Only need clock number, just can judge light intensity through the output of sampling set time internal oscillator.
When the chip of light intensity testing circuit of the present invention is surveyed eventually, can be through selecting different light source irradiation chips, the output frequency of service oscillator OSC can be revised the deviation of technology so flexibly as the judgement thresholding that light intensity detects.In practical application, the chip of light intensity testing circuit of the present invention can directly adopt above-mentioned judgement thresholding to detect light intensity like this.Can conveniently solve like this because process deviation causes reference current Iref to be forbidden the error that causes.
Fig. 3 is a kind of physical circuit figure of light intensity testing circuit in the embodiment of the invention.As shown in Figure 3; In the present embodiment, illuminant module 100 is made up of PMOS pipe P1 and light sensitive diode D1, and source electrode and the substrate of PMOS pipe P1 meet power vd D; Drain and gate links to each other and is connected in A point, the plus earth of light sensitive diode D1 with the negative pole of light sensitive diode D1.The D1 pipe can adopt the realization of common CMOS technology, and it is not conducting when not having illumination, can reverse-conducting when illumination is arranged.The diode that this illuminant module is done through the P1 pipe is connected to a light sensitive diode D1 on the power supply.In the time of light signal, D1 pipe can reverse-conducting, produces induction current Ip.Wherein, the D1 pipe can adopt PNP pipe/NPN pipe emitter and collector short circuit to realize, promptly the D1 pipe can be the PNP pipe/NPN pipe of emitter and collector short circuit.
As shown in Figure 3 again, in the present embodiment, electric current amplify and comparison module by PMOS manage P2, PMOS pipe P3, PMOS pipe P4, PMOS pipe P5 and NMOS pipe N1, NMOS pipe N2, NMOS pipe N3, NMOS pipe N4 forms; Source electrode and the substrate of PMOS pipe P2 meet power vd D, and the drain electrode of grid and PMOS pipe P1 is connected in the A point, and drain electrode is connected in the B point with the drain and gate of NMOS pipe N1; Source electrode and the substrate ground connection of NMOS pipe N1, source electrode and the substrate ground connection of NMOS pipe N2, grid is connected with the grid of NMOS pipe N1; Drain electrode is connected in the C point with the drain and gate of PMOS pipe P3, and source electrode and the substrate of PMOS pipe P3 meet power vd D, and grid links to each other with the grid of PMOS pipe P4; Source electrode and the substrate of PMOS pipe P4 meet power vd D, and drain electrode is connected in the D point with the drain and gate of PMOS pipe (P5), and source electrode and the substrate of PMOS pipe P5 meet power vd D; The grid of PMOS pipe P5 links to each other with the bias current Ibias end of oscillator, source electrode and the substrate ground connection of NMOS pipe N3, and drain electrode is connected in the D point with the drain electrode of PMOS pipe P4; Grid links to each other with the grid of NMOS pipe N4; Source electrode and the substrate ground connection of NMOS pipe N4, grid links to each other with drain electrode, and flows through reference current Iref in the drain electrode.PMOS pipe P2 realizes the mirror image of electric current I p is amplified, and flows through the electric current I 2=A*Ip of P2 pipe.NMOS pipe N2 realizes the mirror image of electric current I 2 being amplified the electric current I 3=A*B*Ip that the N2 pipe flows through.PMOS pipe P4 realizes the mirror image of electric current I 2 is amplified acquisition I3=A*B*C*Ip.The N4 pipe flows through reference current Iref, and reference current is from base modules.The N3 pipe is realized the mirror image to the electric current I ref of N4 pipe.
Conservation calculating according to D point electric current can get I5+I3=I4=Iref.
So I5=I4-I3=Iref-A*B*C*Ip.
If as I4>I3 the time, flow through the electric current I 5=Iref-A*B*C*Ip of N3 pipe, I5 reduces along with the increase of Ip.
If when I4 < in the time of=I3, flows through the electric current I 5=0 of N3 pipe.
Fig. 4 is a kind of physical circuit figure of oscillator in the embodiment of the invention.As shown in Figure 4, in the present embodiment, the ring oscillator of oscillator for being composed in series by 2N+1 level phase inverter, wherein N is more than or equal to 1.In the present embodiment, module 300 is annular oscillators that receive Current Control.Among Fig. 4,4 kinds of output clock waveforms of oscillator are corresponding respectively: 1) the clkout output waveform figure of unglazed photograph, 2) weak light clkout output waveform figure, 3) than intense light irradiation clkout output waveform figure, 4) intense light irradiation clkout output waveform figure.
Fig. 5 is two kinds of physical circuit figure of phase inverter among Fig. 4.Shown in Fig. 5 (a), this phase inverter manages P1a, PMOS pipe P1b by PMOS and NMOS pipe N1a forms, and source electrode and substrate that PMOS manages P1a meet power vd D; Grid connects bias current Ibias end, and drain electrode connects the source electrode of PMOS pipe P1b, and the grid of PMOS pipe (P1b) links to each other with the grid of NMOS pipe N1a; Input end as phase inverter; The drain electrode of PMOS pipe P1b links to each other with the drain electrode of NMOS pipe N1a, as the output terminal of phase inverter, and the source ground of NMOS pipe N1a.Shown in Fig. 5 (b), this phase inverter manages P1a, PMOS pipe P1b by PMOS and NMOS manages N1a, NMOS electric capacity N1b forms, and source electrode and the substrate of PMOS pipe P1a meet power vd D; Grid connects bias current Ibias end, and drain electrode connects the source electrode of PMOS pipe P1b, and the grid of PMOS pipe (P1b) links to each other with the grid of NMOS pipe N1a; Input end as phase inverter; The drain electrode of PMOS pipe P1b links to each other with the drain electrode of NMOS pipe N1a, as the output terminal of phase inverter, and the source ground of NMOS pipe N1a; The grid of NMOS electric capacity N1b connects output terminal, source electrode and the grounded drain of phase inverter.
The time delay TD=of single-stage phase inverter (2C/I) VDD, so I=I5 wherein is TD=(2C/I5) VDD.
So bulk delay TDal=TD* of oscillator (2N+1).
Formula above comprehensive, the clock frequency Fosc formula that can get oscillator OSC output is following:
Can get from top derivation, when photogenerated current Ip becomes big, the frequency Fosc of OSC is slack-off.The clock number of the output of the clock sampling regular time OSC through numeral just can be judged intensity variations.
Therefore light intensity testing circuit provided by the invention has been avoided adopting complicated ADC testing circuit, thereby has been simplified circuit structure, has reduced power consumption, and has reduced the shared chip area of circuit.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. light intensity detection method, this method comprises:
Steps A: through the illuminant module sensed light signal and produce electric current;
Step B: with the Control current of said electric current, with the frequency of control generator output as oscillator;
Step C: gather the frequency of oscillator output, thereby obtain the Strength Changes of light signal according to the frequency of oscillator output.
2. according to light intensity detection method as claimed in claim 1; It is characterized in that; Also comprise among the said step B: the electric current that at first said illuminant module sensed light signal is produced amplifies; Compare with a reference current again and subtract each other or addition, the electric current that obtains to produce with said sensed light signal be inversely proportional to or the electric current of direct ratio after, remake Control current into oscillator.
3. according to according to claim 1 or claim 2 light intensity detection method; It is characterized in that; In said step C: at first preset at least one frequency the frequency that collects is compared with this frequency preset threshold value, thereby whether the Strength Changes of judging light signal reaches preset range as threshold value.
4. according to according to claim 1 or claim 2 light intensity detection method, it is characterized in that, be through gathering the clock number that oscillator is exported in the set time among the said step C, to obtain change of frequency.
5. a light intensity testing circuit comprises illuminant module, electric current amplification and the comparison module, the oscillator that link to each other in order, wherein:
Said illuminant module is used for induction light according to producing photogenerated current;
Said electric current amplifies and comparison module, is used for that said photogenerated current is amplified the back and compares with reference current and subtract each other/addition, obtains to be inversely proportional to said photogenerated current/Control current of direct ratio;
Said oscillator is used to produce the clock signal that output frequency receives said Control current control.
6. light intensity testing circuit according to claim 5 is characterized in that; Said illuminant module is made up of PMOS pipe P1 and light sensitive diode D1; Source electrode and the substrate of PMOS pipe P1 connect power supply (VDD); Drain and gate links to each other and is connected in A point, the plus earth of light sensitive diode D1 with the negative pole of light sensitive diode D1.
7. light intensity testing circuit according to claim 6 is characterized in that, light sensitive diode (D1) is the PNP pipe/NPN pipe of emitter and collector short circuit.
8. light intensity testing circuit according to claim 6 is characterized in that, said electric current amplify and comparison module by PMOS manage P2, PMOS pipe P3, PMOS pipe P4, PMOS pipe P5 and NMOS pipe N1, NMOS pipe N2, NMOS pipe N3, NMOS pipe N4 forms;
Source electrode and the substrate of PMOS pipe P2 connect power supply (VDD), and the drain electrode of grid and PMOS pipe P1 is connected in the A point, and drain electrode is connected in the B point with the drain and gate of NMOS pipe N1, source electrode and the substrate ground connection of NMOS pipe N1;
Source electrode and the substrate ground connection of NMOS pipe N2, grid is connected with the grid of NMOS pipe N1, and drain electrode is connected in the C point with the drain and gate of PMOS pipe P3;
Source electrode and the substrate of PMOS pipe P3 connect power supply (VDD), and grid links to each other with the grid of PMOS pipe P4;
Source electrode and the substrate of PMOS pipe P4 connect power supply (VDD), and drain electrode is connected in the D point with the drain and gate of PMOS pipe P5;
Source electrode and the substrate of PMOS pipe P5 connect power supply (VDD), and the grid of PMOS pipe P5 links to each other with bias current (Ibias) end of said oscillator;
Source electrode and the substrate ground connection of NMOS pipe N3, drain electrode is connected in the D point with the drain electrode of PMOS pipe P4, and grid links to each other with the grid of NMOS pipe N4, source electrode and the substrate ground connection of NMOS pipe N4, grid links to each other with drain electrode, and flows through reference current (Iref) in the drain electrode.
9. light intensity testing circuit according to claim 5 is characterized in that, the ring oscillator of said oscillator for being composed in series by 2N+1 level phase inverter, and wherein N is more than or equal to 1.
10. light intensity testing circuit according to claim 9 is characterized in that, said phase inverter is managed P1a, PMOS pipe P1b and NMOS pipe N1a by PMOS and formed;
Source electrode and the substrate of PMOS pipe P1a connect power supply (VDD), and grid connects bias current (Ibias) end, and drain electrode connects the source electrode of PMOS pipe P1b;
The grid of PMOS pipe P1b links to each other with the grid of NMOS pipe N1a, and as the input end of phase inverter, the drain electrode of PMOS pipe P1b links to each other with the drain electrode of NMOS pipe N1a, as the output terminal of phase inverter, and the source ground of NMOS pipe N1a.
11. light intensity testing circuit according to claim 9 is characterized in that, said phase inverter is managed P1a, PMOS pipe P1b and NMOS pipe N1a, NMOS electric capacity N1b by PMOS and is formed;
Source electrode and the substrate of PMOS pipe P1a connect power supply (VDD), and grid connects bias current (Ibias) end, and drain electrode connects the source electrode of PMOS pipe P1b;
The grid of PMOS pipe P1b links to each other with the grid of NMOS pipe N1a, and as the input end of phase inverter, the drain electrode of PMOS pipe P1b links to each other with the drain electrode of NMOS pipe N1a, as the output terminal of phase inverter, and the source ground of NMOS pipe N1a;
The grid of NMOS electric capacity N1b connects output terminal, source electrode and the grounded drain of phase inverter.
12. the measuring method of the frequency threshold of each described light intensity testing circuit of claim 5 to 11, this method comprises: select the illuminant module at least a predetermined this light intensity testing circuit of illuminated; Detect the frequency of said oscillator output; The frequency of said output is made the decision gate limit value of this light intensity testing circuit under the predetermined light intensity of this kind.
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| CN103389467A (en) * | 2012-05-08 | 2013-11-13 | 现代摩比斯株式会社 | Smart storage battery sensor using Hall sensor |
| CN104639257A (en) * | 2015-01-29 | 2015-05-20 | 电子科技大学 | Anti-interference circuit applied to light receiver |
| WO2015131545A1 (en) * | 2014-03-05 | 2015-09-11 | 北京大学深圳研究生院 | Ultraviolet light sensing circuit and sensing system |
| CN105030254A (en) * | 2015-06-26 | 2015-11-11 | 华南理工大学 | Optical frequency converting device with temperature compensation characteristic, optical frequency converting method and oximeter |
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| CN106872387A (en) * | 2017-02-23 | 2017-06-20 | 苏州亚欧美机器人智能科技有限公司 | A kind of ultraviolet optical detection device of super low-power consumption |
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| CN105030254B (en) * | 2015-06-26 | 2017-12-01 | 华南理工大学 | Apparatus for frequency conversion, method and BOLD contrast with temperature compensation characteristic |
| CN105281749A (en) * | 2015-10-30 | 2016-01-27 | 中国电子科技集团公司第四十四研究所 | Light-frequency conversion circuit |
| CN106872387A (en) * | 2017-02-23 | 2017-06-20 | 苏州亚欧美机器人智能科技有限公司 | A kind of ultraviolet optical detection device of super low-power consumption |
| CN113640641A (en) * | 2020-04-27 | 2021-11-12 | 中移物联网有限公司 | Laser detection unit circuit, laser detection integrated circuit and semiconductor chip |
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| CN102331297B (en) | 2014-01-29 |
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