CN102326059A - 用于高数值孔径光刻系统的偏振监视调制盘设计 - Google Patents
用于高数值孔径光刻系统的偏振监视调制盘设计 Download PDFInfo
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- CN102326059A CN102326059A CN2010800081672A CN201080008167A CN102326059A CN 102326059 A CN102326059 A CN 102326059A CN 2010800081672 A CN2010800081672 A CN 2010800081672A CN 201080008167 A CN201080008167 A CN 201080008167A CN 102326059 A CN102326059 A CN 102326059A
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- polarimeter
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- polarization
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- 230000010287 polarization Effects 0.000 title claims abstract description 106
- 238000013461 design Methods 0.000 title claims description 22
- 238000005530 etching Methods 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 43
- 238000001259 photo etching Methods 0.000 claims abstract description 28
- 230000010363 phase shift Effects 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 238000005259 measurement Methods 0.000 claims description 18
- 230000035945 sensitivity Effects 0.000 claims description 11
- 238000012797 qualification Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000007639 printing Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000003384 imaging method Methods 0.000 description 14
- 210000001747 pupil Anatomy 0.000 description 11
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- 238000005286 illumination Methods 0.000 description 8
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- 239000011159 matrix material Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000711 polarimetry Methods 0.000 description 4
- 230000001429 stepping effect Effects 0.000 description 4
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- 238000004088 simulation Methods 0.000 description 3
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- 230000033228 biological regulation Effects 0.000 description 2
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Images
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
- G01J4/04—Polarimeters using electric detection means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Architecture (AREA)
- Software Systems (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15378709P | 2009-02-19 | 2009-02-19 | |
US61/153,787 | 2009-02-19 | ||
US12/707,962 | 2010-02-18 | ||
US12/707,962 US8368890B2 (en) | 2009-02-19 | 2010-02-18 | Polarization monitoring reticle design for high numerical aperture lithography systems |
PCT/US2010/024699 WO2010096637A1 (en) | 2009-02-19 | 2010-02-19 | Polarization monitoring reticle design for high numerical aperture lithography systems |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102326059A true CN102326059A (zh) | 2012-01-18 |
CN102326059B CN102326059B (zh) | 2014-05-21 |
Family
ID=42559638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080008167.2A Active CN102326059B (zh) | 2009-02-19 | 2010-02-19 | 用于高数值孔径光刻系统的偏振监视调制盘设计 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8368890B2 (zh) |
EP (1) | EP2399105B1 (zh) |
CN (1) | CN102326059B (zh) |
WO (1) | WO2010096637A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8001495B2 (en) | 2008-04-17 | 2011-08-16 | International Business Machines Corporation | System and method of predicting problematic areas for lithography in a circuit design |
DE102012203944A1 (de) | 2012-03-14 | 2013-10-02 | Carl Zeiss Smt Gmbh | Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage |
DE102013200394A1 (de) | 2013-01-14 | 2014-07-17 | Carl Zeiss Smt Gmbh | Polarisationsmessvorrichtung, Lithographieanlage, Messanordnung, und Verfahren zur Polarisationsmessung |
EP3097513A4 (en) * | 2014-01-22 | 2017-08-02 | Polaris Sensor Technologies, Inc. | Polarization imaging for facial recognition enhancement system and method |
USD787579S1 (en) * | 2015-02-24 | 2017-05-23 | Xylon d.o.o. | Calibration pattern sheet |
US9631979B2 (en) | 2015-09-25 | 2017-04-25 | Benchmark Technologies | Phase-shift reticle for characterizing a beam |
US9697310B2 (en) * | 2015-11-02 | 2017-07-04 | Winbond Electronics Corporation | Level faults interception in integrated circuits |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
US20030203292A1 (en) * | 2002-04-26 | 2003-10-30 | Taiwan Semiconductor Manufacturing Co. | Quartz damage repair method for high-end mask |
US20040114150A1 (en) * | 2002-07-29 | 2004-06-17 | Carl Zeiss Smt Ag | Method and apparatus for determining the influencing of the state of polarization by an optical system; and an analyser |
CN1584536A (zh) * | 2003-07-05 | 2005-02-23 | 卡尔蔡司Smt股份公司 | 用于偏振特定研究的装置、光学成像系统和校准方法 |
US20060187451A1 (en) * | 2005-02-18 | 2006-08-24 | The Regents Of The University Of California | Phase-shifting test mask patterns for characterizing illumination polarization balance in image forming optical systems |
US20070064572A1 (en) * | 2005-07-27 | 2007-03-22 | Polarizonics Corporation | Optical data encoding and detection |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7014962B2 (en) * | 2003-09-13 | 2006-03-21 | Chartered Semiconductor Manufacturing, Ltd | Half tone alternating phase shift masks |
JP3718511B2 (ja) * | 2003-10-07 | 2005-11-24 | 株式会社東芝 | 露光装置検査用マスク、露光装置検査方法及び露光装置 |
US7307689B2 (en) * | 2004-12-29 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, reticle masking device for a lithographic apparatus, gas bearing and apparatus comprising such gas bearing |
EP1896899A2 (en) * | 2005-06-24 | 2008-03-12 | Koninklijke Philips Electronics N.V. | Methods and devices for characterizing polarization of illumination system |
JP4928897B2 (ja) * | 2005-12-01 | 2012-05-09 | 株式会社東芝 | 偏光評価マスク、偏光評価方法、及び偏光計測装置 |
-
2010
- 2010-02-18 US US12/707,962 patent/US8368890B2/en active Active
- 2010-02-19 WO PCT/US2010/024699 patent/WO2010096637A1/en active Application Filing
- 2010-02-19 EP EP10744347.5A patent/EP2399105B1/en not_active Not-in-force
- 2010-02-19 CN CN201080008167.2A patent/CN102326059B/zh active Active
-
2012
- 2012-10-24 US US13/659,236 patent/US8679708B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
US20030203292A1 (en) * | 2002-04-26 | 2003-10-30 | Taiwan Semiconductor Manufacturing Co. | Quartz damage repair method for high-end mask |
US20040114150A1 (en) * | 2002-07-29 | 2004-06-17 | Carl Zeiss Smt Ag | Method and apparatus for determining the influencing of the state of polarization by an optical system; and an analyser |
CN1584536A (zh) * | 2003-07-05 | 2005-02-23 | 卡尔蔡司Smt股份公司 | 用于偏振特定研究的装置、光学成像系统和校准方法 |
US20060187451A1 (en) * | 2005-02-18 | 2006-08-24 | The Regents Of The University Of California | Phase-shifting test mask patterns for characterizing illumination polarization balance in image forming optical systems |
US20070064572A1 (en) * | 2005-07-27 | 2007-03-22 | Polarizonics Corporation | Optical data encoding and detection |
Also Published As
Publication number | Publication date |
---|---|
US8679708B2 (en) | 2014-03-25 |
CN102326059B (zh) | 2014-05-21 |
US20100208264A1 (en) | 2010-08-19 |
US8368890B2 (en) | 2013-02-05 |
US20130091475A1 (en) | 2013-04-11 |
EP2399105A4 (en) | 2018-01-10 |
EP2399105A1 (en) | 2011-12-28 |
EP2399105B1 (en) | 2018-10-31 |
WO2010096637A1 (en) | 2010-08-26 |
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TR01 | Transfer of patent right |
Effective date of registration: 20171027 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171027 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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Effective date of registration: 20210407 Address after: Hsinchu City, Taiwan, China Patentee after: Taiwan Semiconductor Manufacturing Co.,Ltd. Address before: Grand Cayman Islands Patentee before: GLOBALFOUNDRIES INC. |
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