CN102280529A - Transparent conductive film with high Haze value and preparation method thereof - Google Patents
Transparent conductive film with high Haze value and preparation method thereof Download PDFInfo
- Publication number
- CN102280529A CN102280529A CN2011102236053A CN201110223605A CN102280529A CN 102280529 A CN102280529 A CN 102280529A CN 2011102236053 A CN2011102236053 A CN 2011102236053A CN 201110223605 A CN201110223605 A CN 201110223605A CN 102280529 A CN102280529 A CN 102280529A
- Authority
- CN
- China
- Prior art keywords
- transparent conductive
- conductive film
- zno
- degree value
- suede degree
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention, which belongs to the thin film solar cell manufacturing technology field, relates to a transparent conductive film with a high Haze value and a preparation method thereof. A technology scheme comprises the following steps: (1) preparing a layer of 1000nm-1500nm ZnO transparent conductive film on a cleaned glass substrate by using a magnetron sputtering technology; (2) preparing the ZnO transparent conductive film under conditons of maintaining a gas pressure, a substrate temperature and a radio frequency power and changing a argon flow which flows into a reaction chamber; (3) wet etching the obtained ZnO transparent conductive film; (4) cleaning the etched ZnO transparent conductive film by using deionized water, drying through using nitrogen so that the suede ZnO transparent conductive film can be obtained. The invention has advantages of high Haze, a high light scattering capability, a high near infrared light scattering capability, high transmittance and low conductance. The prepared ZnO transparent conductive film possesses high diffuse transmittance, high transmittance and low resistivity.
Description
Technical field
The present invention relates to a kind of transparent conductive film and preparation method thereof, belong to thin film solar cell manufacturing technology field with high suede degree value.
Background technology
Zinc oxide (ZnO) transparent conductive film is owing to its good electricity and optical property, and electrode is applied to field of thin film solar cells before being particularly suitable as.For electrode before the thin-film solar cells, whether excellent transmitance and resistivity are to weigh electrode performance important indicator.Under the certain prerequisite of preceding electrode material transmitance, the electrode material light scattering ability can effectively increase light path before promoting, and significantly promotes absorbed layer to utilization of incident light.Can reduce simultaneously the thickness of film, reduce production cost of cells.The method that realizes the high scattering of film is the ZnO nesa coating to be carried out matte handle, and obtains suede structure at film surface.Suede degree (Haze) is the criterion of matte, is meant the ratio of incident scattering of light transmitance (diffuse transmittance) and total transmitance (total transmittance), characterizes the scattering power of film for incident light.Therefore, whether excellent suede degree value be to characterize electrically conducting transparent film properties important indicator.
With the silicon film solar batteries is example, and the overlapping thin film solar battery technology has become the development main flow.Lamination solar cell is that with respect to the sharpest edges of traditional single-unit hull cell different absorbed layers can the corresponding incident light that absorbs different wave length, has enlarged the scope of spectral absorption.Therefore, stack technology requires conductive film layer in full spectral region higher scattered power to be arranged all.In the background technology, though ZnO film can obtain higher Haze at the 550nm place, long wavelength's section (〉 800nm) scattering power is generally not good.China applies for a patent CN03137254 and relates to a kind of pile face zinc oxide transparent conductive film and preparation method thereof, discloses the use sputtering method and has prepared the textured ZnO conductive film, and less than 31.6%, the 800nm place is less than 10% at the 550nm place for its suede degree.China applies for a patent CN200910197099 and relates to a kind of pile face zinc oxide transparent conductive method for manufacturing thin film, disclose and used magnetron sputtering to be equipped with the method for matte transparent conductive film, unreceipted prepared conductive film performance among the result in conjunction with the wet-chemical chamber legal system.China applies for a patent the preparation method that CN201010527670 relates to a kind of pile face zinc oxide transparent conductive film, the method of having used sputter to add wet-chemical chamber equally prepares Textured ZnO Transparent Conductive Thin Film, and its conductive film maximum suede degree value in the 380nm-760nm scope is 45%.And it is prepared the laminated-silicon thin film solar cell as preceding conductive film layer, the initial conversion efficient of battery reaches 12%.
As mentioned above, the problem that background technology exists is: the light scattering ability of conductive film layer, particularly the long-wave band light scattering ability is not high, therefore is necessary further to improve transparency conducting layer preparation technology to improve the photoelectric conversion efficiency of laminated film solar battery.
Summary of the invention
The purpose of this invention is to provide a kind of transparent conductive film and preparation method thereof, further improve transparency conducting layer preparation technology, solve the problems referred to above that background technology exists to improve the photoelectric conversion efficiency of battery with high suede degree value.
Technical scheme of the present invention is:
Have the method for preparing transparent conductive film of high suede degree value in a kind of, comprise following processing step:
1. in gas pressure intensity 1--5mTorr ar gas environment, underlayer temperature 0--300 ℃, under the condition of radio-frequency power 100--300W, on the glass substrate after cleaning, use magnetron sputtering technique to prepare the ZnO transparency conducting layer of one deck 1000nm--1500nm;
2. keep gas pressure intensity, underlayer temperature, radio-frequency power constant, change the argon flow amount that feeds in the reaction chamber separately, preparation ZnO nesa coating;
3. the ZnO nesa coating that obtains is carried out wet etching;
4. the ZnO nesa coating after nitrogen dries up, can obtain the textured ZnO transparent conductive film through washed with de-ionized water after the etching.
Said change feeds the argon flow amount in the reaction chamber, and feeding the argon flow amount scope is 2--20sccm.
Described ZnO transparency conducting layer can be the Al doping ZnO, also can be the transparent conductive film layer that other element doping ZnO forms.
Said the ZnO nesa coating that obtains is carried out wet etching, preferred concentration is the etching liquid etching of 0.1--2wt%; Said etching liquid can be an acid solution, also can be alkaline solution.
A kind of transparent conductive film with high suede degree value, adopt following processing step to make: 1. in gas pressure intensity 1--5mTorr ar gas environment, underlayer temperature 0--300 ℃, under the condition of radio-frequency power 100--300W, cleaning on the glass substrate later, using magnetron sputtering technique to prepare the ZnO transparency conducting layer of one deck 1000nm--1500nm; 2. keep gas pressure intensity, underlayer temperature, radio-frequency power constant, change the argon flow amount that feeds in the reaction chamber separately, preparation ZnO nesa coating; 3. the ZnO nesa coating that obtains is carried out wet etching; 4. the ZnO nesa coating after nitrogen dries up, can obtain the textured ZnO transparent conductive film through washed with de-ionized water after the etching.
Said textured ZnO transparent conductive film is that a kind of suede degree value is greater than 60% in the 400-900nm spectral region, and the suede degree value at 1100nm wavelength place is greater than 28% zinc oxide transparent conductive film.
Said textured ZnO transparent conductive film, resistivity is smaller or equal to 4 * 10
-4Ω cm.
Advantage of the present invention and good effect: high suede degree, the maximum suede degree of 550nm place film value is greater than 75%; Suede degree value is greater than 60% in the high light scattering ability, 400nm--900nm spectral region; High near-infrared light scattering ability, 1100nm wavelength place suede degree value is greater than 28%; High permeability, the total transmitance of 400nm--700nm are greater than 80%, and the total transmitance of 700--900nm is greater than 75%; Low electricity is led, and textured ZnO conductive film layer resistivity is less than 4 * 10 after the etching
-4Ω cm; Because the ZnO transparent conductive film of preparation has high scattering transmitance, high permeability and low-resistivity, so the technology of this patent invention is suitable for preparing electrode before the thin-film solar cells, includes but are not limited to silicon-based film solar cells.
Description of drawings
Accompanying drawing 1 is the Textured ZnO Transparent Conductive Thin Film transmitance chart of embodiment of the invention preparation;
Accompanying drawing 2 is the Textured ZnO Transparent Conductive Thin Film suede degree value chart of embodiment of the invention preparation;
Accompanying drawing 3 is the maximum suede degree of the present invention transparent conductive film electron scanning micrograph.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described by embodiment.
Embodiment one,Use float glass as prebasal plate,, use radiofrequency magnetron sputtering technology at growth aluminium-doped zinc oxide film on glass through after the ultrasonic cleaning.
Aforesaid depositing operation, selecting target for use is 2wt%Al
2O
3Doping ZnO is chosen gas pressure intensity 3mTorr, 200 ℃ of underlayer temperatures, and radio-frequency power 250W feeds argon flow amount 2sccm deposition ZnO nesa coating.
The ZnO nesa coating of magnetron sputtering preparation is carried out wet etching, and preferred concentration is the hydrochloric acid etching liquid etching of 1wt%.Control etch period 80s can obtain Textured ZnO Transparent Conductive Thin Film.
Gained matte nesa coating 400nm--900nm mean transmissivity is greater than 78%, and resistivity is less than 3.2 * 10
-4Ω cm.
Embodiment two,As method for preparing transparent conductive film as described in the embodiment one, feed argon flow amount and change 10sccm into, gained matte nesa coating 400nm--900nm mean transmissivity is greater than 78%, and resistivity is less than 3 * 10
-4Ω cm.
Embodiment three,As method for preparing transparent conductive film as described in the embodiment one, feed argon flow amount and change 20sccm into, gained matte nesa coating 400nm--900nm mean transmissivity is greater than 79%, and resistivity is less than 2.8 * 10
-4Ω cm.
With reference to accompanying drawing 1,2, along with the change of gas flow, by embodiment one to embodiment three, the suede degree of gained sample constantly increases.900nm wavelength place suede degree value 62.8% among the embodiment three, sample have excellent light scattering ability in the 400nm--900nm spectral region; 1100nm wavelength place suede degree value 28.4%, sample has high light scattering ability near infrared band.Accompanying drawing 3 is the microphoto of embodiment three gained samples, can see that sample surfaces has very high roughness and empty size differs, and helps realizing different wave length incident scattering of light.
Claims (8)
1. method for preparing transparent conductive film with high suede degree value, it is characterized in that comprising following processing step: 1. in gas pressure intensity 1--5mTorr ar gas environment, underlayer temperature 0--300 ℃, under the condition of radio-frequency power 100--300W, cleaning on the glass substrate later, using magnetron sputtering technique to prepare the ZnO transparency conducting layer of one deck 1000nm--1500nm; 2. keep gas pressure intensity, underlayer temperature, radio-frequency power constant, change the argon flow amount that feeds in the reaction chamber separately, preparation ZnO nesa coating; 3. the ZnO nesa coating that obtains is carried out wet etching; 4. the ZnO nesa coating after nitrogen dries up, can obtain the textured ZnO transparent conductive film through washed with de-ionized water after the etching.
2. the method for preparing transparent conductive film with high suede degree value according to claim 1 is characterized in that said change feeds the argon flow amount in the reaction chamber, and feeding the argon flow amount scope is 2--20sccm.
3. according to claim 1 or the 2 described method for preparing transparent conductive film with high suede degree value, it is characterized in that described ZnO transparency conducting layer can be the Al doping ZnO, also can be the transparent conductive film layer that other element doping ZnO forms.
4. according to claim 1 or 2 described method for preparing transparent conductive film with high suede degree value, it is characterized in that said the ZnO nesa coating that obtains being carried out wet etching, preferred concentration is the etching liquid etching of 0.1--2wt%; Said etching liquid can be an acid solution, also can be alkaline solution.
5. transparent conductive film with high suede degree value, it is characterized in that: adopt following processing step to make: 1. in gas pressure intensity 1--5mTorr ar gas environment, underlayer temperature 0--300 ℃, under the condition of radio-frequency power 100--300W, cleaning on the glass substrate later, using magnetron sputtering technique to prepare the ZnO transparency conducting layer of one deck 1000nm--1500nm; 2. keep gas pressure intensity, underlayer temperature, radio-frequency power constant, change the argon flow amount that feeds in the reaction chamber separately, preparation ZnO nesa coating; 3. the ZnO nesa coating that obtains is carried out wet etching; 4. the ZnO nesa coating after nitrogen dries up, can obtain the textured ZnO transparent conductive film through washed with de-ionized water after the etching.
6. according to the preparation method of claim 1 or 2 described transparent conductive films, it is characterized in that said substrate is a glass substrate, comprise half tempered glass substrate, toughened glass substrate, polyester film substrate and flexible substrate substrate with high suede degree value.
7. the transparent conductive film with high suede degree value according to claim 5, it is characterized in that said textured ZnO transparent conductive film, be that a kind of suede degree value is greater than 60% in the 400-900nm spectral region, the suede degree value at 1100nm wavelength place is greater than 28% zinc oxide transparent conductive film.
8. the transparent conductive film with high suede degree value according to claim 5 is characterized in that said textured ZnO transparent conductive film, and resistivity is smaller or equal to 4 * 10
-4Ω cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102236053A CN102280529A (en) | 2011-08-05 | 2011-08-05 | Transparent conductive film with high Haze value and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102236053A CN102280529A (en) | 2011-08-05 | 2011-08-05 | Transparent conductive film with high Haze value and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102280529A true CN102280529A (en) | 2011-12-14 |
Family
ID=45105839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102236053A Pending CN102280529A (en) | 2011-08-05 | 2011-08-05 | Transparent conductive film with high Haze value and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102280529A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583504A (en) * | 2012-01-18 | 2012-07-18 | 山东大学 | Method for preparation and regulation of surface-roughness ZnO nano-cone or nanorod array |
| CN102623569A (en) * | 2012-04-11 | 2012-08-01 | 保定天威薄膜光伏有限公司 | Method for producing textured transparent conductive oxide film of thin-film solar cell |
| CN102881727A (en) * | 2012-10-15 | 2013-01-16 | 浙江大学 | High-conductivity antireflection film and preparation method thereof |
| CN103413842A (en) * | 2013-07-11 | 2013-11-27 | 长沙理工大学 | Al doped ZnO transparent conducting micrometer/nanometer wire array film and preparation method thereof |
| CN103568404A (en) * | 2012-07-27 | 2014-02-12 | 信义光伏产业(安徽)控股有限公司 | Electric conductive glass, preparation method, and applications thereof |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate and preparation method thereof and organic electroluminescent device |
| CN108588656A (en) * | 2018-04-11 | 2018-09-28 | 浙江师范大学 | Al-Doped ZnO film preparation method with quant's sign scale |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101619445A (en) * | 2009-07-31 | 2010-01-06 | 北京科技大学 | Method for preparing transparent conductive film material |
| CN101768728A (en) * | 2010-01-15 | 2010-07-07 | 深圳大学 | Method for preparing doped ZnO-based film through magnetron sputtering |
| CN101845615A (en) * | 2010-05-26 | 2010-09-29 | 广东志成冠军集团有限公司 | Method for preparing single crystal transparent ZnO film by adopting RF (Radio Frequency) magnetron sputtering |
| CN101882632A (en) * | 2010-06-18 | 2010-11-10 | 南开大学 | Glass substrate matte structure ZnO film and application |
| CN102034901A (en) * | 2010-10-27 | 2011-04-27 | 新奥光伏能源有限公司 | Transparent conductive thin film and preparation method thereof |
-
2011
- 2011-08-05 CN CN2011102236053A patent/CN102280529A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101619445A (en) * | 2009-07-31 | 2010-01-06 | 北京科技大学 | Method for preparing transparent conductive film material |
| CN101768728A (en) * | 2010-01-15 | 2010-07-07 | 深圳大学 | Method for preparing doped ZnO-based film through magnetron sputtering |
| CN101845615A (en) * | 2010-05-26 | 2010-09-29 | 广东志成冠军集团有限公司 | Method for preparing single crystal transparent ZnO film by adopting RF (Radio Frequency) magnetron sputtering |
| CN101882632A (en) * | 2010-06-18 | 2010-11-10 | 南开大学 | Glass substrate matte structure ZnO film and application |
| CN102034901A (en) * | 2010-10-27 | 2011-04-27 | 新奥光伏能源有限公司 | Transparent conductive thin film and preparation method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583504A (en) * | 2012-01-18 | 2012-07-18 | 山东大学 | Method for preparation and regulation of surface-roughness ZnO nano-cone or nanorod array |
| CN102583504B (en) * | 2012-01-18 | 2014-01-01 | 山东大学 | Method for preparation and regulation of surface-roughness ZnO nano-cone or nanorod array |
| CN102623569A (en) * | 2012-04-11 | 2012-08-01 | 保定天威薄膜光伏有限公司 | Method for producing textured transparent conductive oxide film of thin-film solar cell |
| CN103568404A (en) * | 2012-07-27 | 2014-02-12 | 信义光伏产业(安徽)控股有限公司 | Electric conductive glass, preparation method, and applications thereof |
| CN103568404B (en) * | 2012-07-27 | 2015-09-16 | 信义光伏产业(安徽)控股有限公司 | Electro-conductive glass, its preparation method and application |
| CN102881727A (en) * | 2012-10-15 | 2013-01-16 | 浙江大学 | High-conductivity antireflection film and preparation method thereof |
| CN102881727B (en) * | 2012-10-15 | 2015-04-29 | 浙江大学 | High-conductivity antireflection film and preparation method thereof |
| CN103413842A (en) * | 2013-07-11 | 2013-11-27 | 长沙理工大学 | Al doped ZnO transparent conducting micrometer/nanometer wire array film and preparation method thereof |
| CN103413842B (en) * | 2013-07-11 | 2016-05-04 | 长沙理工大学 | A kind of A1 doping ZnO electrically conducting transparent micro-/ nano linear array film and preparation method thereof |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate and preparation method thereof and organic electroluminescent device |
| CN108588656A (en) * | 2018-04-11 | 2018-09-28 | 浙江师范大学 | Al-Doped ZnO film preparation method with quant's sign scale |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102280529A (en) | Transparent conductive film with high Haze value and preparation method thereof | |
| US9023681B2 (en) | Method of fabricating heterojunction battery | |
| Rath et al. | Transparent conducting oxide layers for thin film silicon solar cells | |
| CN101447518A (en) | Ant-apex contact heterojunction solar battery and preparation method thereof | |
| CN102403376B (en) | n-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof | |
| Lai et al. | Plasma-induced TCO texture of ZnO: Ga back contacts on silicon thin film solar cells | |
| US20140083501A1 (en) | Transparent conducting film having double structure and method of manufacturing the same | |
| CN109037361A (en) | A kind of high efficiency cadmium telluride diaphragm solar battery | |
| CN102332499B (en) | Method for utilizing microparticles to produce double-textured transparent electrode | |
| TWI538227B (en) | Photovoltaic cell having an antireflective coating | |
| CN104681662A (en) | Preparation method of high-reflectivity solar film | |
| CN107217232A (en) | A kind of method for improving zinc oxide transparent conductive film chemical stability | |
| CN202137995U (en) | Transparent conductive film glass | |
| CN103081028B (en) | The stacked body of nesa coating and manufacture method thereof and thin-film solar cells and manufacture method thereof | |
| CN104409528B (en) | Electrode and application before the HAZO/AZO composite transparent conductions that a kind of wide spectrum characteristic improves | |
| CN102837467A (en) | Transparent conductive film glass and preparation method thereof | |
| CN102637751A (en) | Broad-spectrum light trapping transparent electroconductive film for solar battery and preparation method thereof | |
| CN102842634A (en) | Back emitting electrode heterojunction solar cell and preparation method | |
| CN102650044B (en) | A kind of preparation method of SGZO-Au-SGZO nesa coating | |
| CN203503665U (en) | Solar cell glass cover plate | |
| CN103203912B (en) | A kind of new A ZO coated glass and preparation technology thereof | |
| CN105489699A (en) | Preparation method of AZO/Ag/AZO composite membrane for front electrode of solar thin-film cell | |
| CN106591789B (en) | A method of directly preparing flannelette AZO film | |
| CN205016537U (en) | Compliance high efficiency CIGS solar cell structure | |
| CN103572238A (en) | Preparation method of double-frosted surface ZnO-based film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111214 |