CN102270726A - Light emitting diode device and a method for improving the luminous efficiency - Google Patents

Light emitting diode device and a method for improving the luminous efficiency Download PDF

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CN102270726A
CN102270726A CN2010101918239A CN201010191823A CN102270726A CN 102270726 A CN102270726 A CN 102270726A CN 2010101918239 A CN2010101918239 A CN 2010101918239A CN 201010191823 A CN201010191823 A CN 201010191823A CN 102270726 A CN102270726 A CN 102270726A
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light emitting
emitting diode
substrate
beam
etching
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CN2010101918239A
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张简庆华
郭明腾
陈彰和
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华新丽华股份有限公司
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Publication of CN102270726A publication Critical patent/CN102270726A/en

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Abstract

本发明公开一种具有提高发光效率的发光二极管装置。 The present invention discloses a light emitting diode device having improved luminous efficiency. 本发光二极管装置包括提供第一光束的发光二极管晶粒;具有梯形剖面的基板,用来支承发光二极管晶粒,第一光束可由的透光;以及封装体,含有磷光质并封装发光二极管晶粒和基板,用来固定发光二极管晶粒和基板,在磷光质为第一光束所激发时来提供第二光束。 This LED device comprises providing a light emitting diode chip of the first light beam; a substrate having a trapezoidal cross-section, for supporting the light emitting diode chip, the first light beam may be light transmissive; and a package body containing a phosphorescent light emitting diode die and packaged and the substrate, for fixing the LED chip and the substrate, when the phosphors is excited by a first light beam to provide a second light beam. 归功于基板的形状,而使基板与磷光质的接触面积增大。 Due to the shape of the substrate, the substrate and the contact area of ​​phosphors is increased. 发光效率随之提高。 Light emission efficiency increases.

Description

发光二极管装置及提高其发光效率的方法 Light emitting diode device and a method for improving the luminous efficiency

技术领域 FIELD

[0001] 本发明是有关发光二极管装置,尤指一种改变基板形状使其与磷光质接触面积增加的发光二极管装置,以提高发光效率。 [0001] The present invention relates to a light emitting diode device, particularly to a light emitting diode so as to change the shape of the substrate and means to increase the contact area of ​​the phosphors, to improve luminous efficiency.

背景技术 Background technique

[0002] 改善发光二极管的发光效率为近年研究的重心。 Luminous efficiency [0002] The light emitting diode is improved focus of recent research. 当开启发光二极管时,来自活性层(active layer)的光束向四周发散。 When the light emitting diode is turned on, the light beam from the active layer (active layer) to the surrounding divergent. 部分光束可有效利用,部分光束则由基板吸收。 Partial light beams can be effectively utilized, the partial light beams absorbed by the substrate. 如图1所绘示。 1 depicted in FIG. 传统发光二极管10由蓝宝石基板102、LED晶粒104和封装体106所组成。 10 by a conventional light-emitting diode 102, LED die 104 and package substrate 106 composed of sapphire. LED晶粒104磊晶生成于蓝宝石基板102上并产生光束。 LED 104 to generate the epitaxial crystal on a sapphire substrate 102 and generates a light beam. 晶粒104和蓝宝石基板102经封装保护于封装体106内。 The sapphire substrate 104 and die 102 is encapsulated within a protective package 106. 图中箭头绘示发射自LED晶粒104的光束。 An arrow 104 illustrates the light beam emitted from the LED die. 显然地,光束全方位地发散。 Obviously, the full range of beam divergence. 实线箭头显示光束直接自提供有效光的发光二极管10发出。 The solid line arrows show the effective light beam provided directly from the LED 10 emits. 同时,点线箭头和虚线箭头显示光束向蓝宝石基板102发射。 Meanwhile, the dotted arrows and dotted arrows show the light beams emitted toward the sapphire substrate 102.

[0003] 点线箭头代表光束隔绝在蓝宝石基板102内,无法帮助发光二极管10的发光,主要因为蓝宝石基板102的吸收造成全反射(total internal reflection)现象。 [0003] The dotted arrows represent the light beam within the sapphire substrate 102 isolated, not help the light emitting diode 10, mainly due to absorption of the sapphire substrate 102 causes total reflection (total internal reflection) phenomenon. 另一方面, 点线箭头绘示光束有机会不被蓝宝石基板102吸收而释出。 On the other hand, dotted arrow shows a light beam is not absorbed opportunity to release the sapphire substrate 102. 目前亟需一种改良的蓝宝石基板102,以使困于蓝宝石基板内的更多光束能获得利用。 Currently a need for an improved sapphire substrate 102, so that more light trapped within the sapphire substrate can be obtained using.

[0004] 为解决上述问题,美国第6,791,119号专利公开一种改良的基板结构。 [0004] In order to solve the above problems, U.S. Patent No. 6,791,119 discloses an improved structure of the substrate. 如图2所示,发光二极管包含基板(其具有第一和第二相对的面),预定的波长的光辐射(optical ra diation)可由之透出。 2, a light emitting diode includes a substrate (a first and a second opposing face having) optical radiation of a predetermined wavelength (optical ra diation) by the revealing. 基板具有图案化的剖面。 A substrate having a patterned cross-section. 多个基座自基板的第一面向第二面延伸。 A plurality of base extending from the second surface facing the first substrate. 将电压施加于第二面上的二极管区时,二极管区发出预定波长范围的光到基板。 When a voltage is applied to the surface region of the second diode, the diode emits light of a predetermined wavelength region to the range of the substrate. 二极管区上的安装支座(基板的对面)用来支承二极管区。 Mounting bracket (opposite substrate) for supporting the diode region on the diode region. 因此,在二极管区施以电压后,二极管区发射到基板的光会自第一面发出。 Therefore, after the applied voltage diode region, the light emitting diode region will be emitted from the first surface of the substrate. 基板的第一面可包含多个槽来界定基板中的多个三角形基座。 The first surface of the substrate may comprise a plurality of grooves to define a plurality of triangular base substrate. 槽可包含锥状侧壁(sidewalls)或斜底。 Groove may comprise a tapered sidewall (Sidewalls) or sloping bottom. 基板第一面亦可包含通孔(via holes) 数组。 The first surface of the substrate may also include vias (via holes) array. 通孔可包含锥状侧壁(sidewalIs)或底。 Vias may comprise a tapered sidewall (sidewalIs) or bottom.

[0005] 美国第6,791,119号专利指出提高发光效率是由于第一和第二两相对的面大小不同,促成斜坡的形成。 [0005] U.S. Pat. No. 6,791,119 to improve the luminous efficiency was noted due to the difference of the first and second opposing faces two sizes, contribute to the formation of the slope. 然而,上述美国第6,791,119号专利的设计主要适用于未经磷光质封装的发光二极管,因而不易施行。 However, the above U.S. patent No. 6,791,119 is designed for entry without a phosphorescent light-emitting diode package, thereby easily performed.

[0006] 为克服上述现有的缺点同时提高发光二极管发光效率,本发明遂提出利用增加发光二极管基板与磷光质的接触面积,以提高发光效率。 [0006] To overcome the above disadvantages of the conventional light emitting diode while increasing efficiency, use of the present invention then proposes to increase the area of ​​contact with the phosphorescent light emitting diode board, in order to improve the luminous efficiency. 相较于现有技艺,本发明显得更易施行。 Compared to the prior art, the present invention to be more readily performed.

发明内容 SUMMARY

[0007] 本发明的目的是提供一种发光二极管装置及提高其发光效率的方法,以解决现有技术中所存在的问题。 [0007] The object of the present invention is to provide a light emitting diode device and a method for improving the luminous efficiency, the prior art to solve the problems.

[0008] 为了达到上述目的,本案的提供一种具有提高发光效率的发光二极管装置,包括用来提供第一光束的发光二极管晶粒;具有梯形剖面的基板,用来支承发光二极管晶粒,第一光束可由之透光;以及封装体,含有磷光质并封装发光二极管晶粒和基板,用来固定发光二极管晶粒和基板,在磷光质为第一光束所激发时来提供第二光束。 [0008] To achieve the above object, the present case to improve the light emitting diode device having a light emission efficiency, a light emitting diode comprising a die for providing a first light beam; a substrate having a trapezoidal cross-section, for supporting the light emitting diode die, the first the beam may be a light transmissive; and a package body and the package containing a phosphorescent light emitting diode die and the substrate, for fixing the LED chip and the substrate, when the phosphors is excited by a first light beam to provide a second light beam.

[0009] 根据本案构想,基板在其梯形的坡面上具有槽。 [0009] The case is contemplated that a substrate having a trapezoidal groove in its slope.

[0010] 根据本案构想,槽通过电浆蚀刻(plasma etching)、溅射蚀刻(sputteretching)、 离子光束蚀刻法(ion beam etching)、反应式离子蚀刻(reactive ionetching)、激光切割(laser cutting)或机械切割(mechanical cutting)来形成。 [0010] The case is contemplated that groove by plasma etching (plasma etching), sputter etching (sputteretching), ion beam etching (ion beam etching), reactive ion etching (reactive ionetching), laser cutting (laser cutting), or mechanical cutting (mechanical cutting) formed.

[0011] 根据本案构想,基板为蓝宝石基板。 [0011] The case is contemplated that the substrate is a sapphire substrate.

[0012] 根据本案构想,基板由电子束蚀刻(electron beam lithography)、激光束直写(laser beam direct writing)、灰阶烛刻(gray-scale lithography)、钻石切割(diamond ruling)、聚焦离子束研磨(focus ion beam milling)或激光溅镀(laser ablation)所成形。 [0012] The case is contemplated that the substrate is etched by an electron beam (electron beam lithography), laser beam writing (laser beam direct writing), candle carved gray (gray-scale lithography), diamond cutting (diamond ruling), focused ion beam polishing (focus ion beam milling) sputtering or laser (laser ablation) are formed.

[0013] 根据本案构想,封装体由环氧树脂(印oxy resin)、硅胶(silicone)、聚醚酰亚胺(polyetherimide)、氟碳聚合物(f luorocarbon polymer)、聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)、聚碳酸酉旨(polycarbonate,PC)、或环烯烃共聚物(Cyclo olefin copolymer, C0C)所制成。 [0013] The case is contemplated that an epoxy resin package (printing oxy resin), silicone (Silicone), polyetherimide (Polyetherimide), fluorocarbon polymers (f luorocarbon polymer), polymethyl methacrylate ( polymethylmethacrylate, PMMA), polycarbonate unitary purpose (polycarbonate, PC), or a cyclic olefin copolymer (Cyclo olefin copolymer, C0C) made.

[0014] 本案还提供一种提高发光二极管装置发光效率的方法,包括以下步骤:a)形成具有梯形剖面的基板;b)在基板上生成发光二极管晶粒;C)通过发光二极管晶粒来提供第一光束;d)封装基板、发光二极管晶粒和磷光质;以及e)通过第一光束激发磷光质来提供第■~•光束ο [0014] The case also provides a method for improving the light emitting efficiency of the light emitting diode device, comprising the steps of: a) forming a substrate having a trapezoidal cross-section; b) generating a LED chip on a substrate; C) provided by the LED chip a first light beam; D) package substrate, a light emitting diode chip and phosphors; and e) a first light beam excited by the phosphors to provide light of ■ ~ • ο

[0015] 根据本案构想,本发明进一步包括在梯形的坡面上形成数个槽的步骤。 [0015] The case is contemplated that the present invention further comprises the step of forming a plurality of grooves on the slope trapezoid.

[0016] 根据本案构想,其中槽由电浆蚀刻、溅射蚀刻、离子光束蚀刻法、反应式离子蚀刻、 激光切割或机械切割所形成。 [0016] The case is contemplated in which the groove is cut by plasma etching, sputter etching, ion beam etching, reactive ion etching, formed by laser or mechanical cutting.

[0017] 根据本案构想,其中形成步骤通过电子束蚀刻、激光束直写、灰阶蚀刻、钻石切割、 聚焦离子束研磨或激光溅镀所施行。 [0017] The case is contemplated wherein the forming step is performed by electron beam lithography, laser beam direct writing, gray etching, diamond cutting, milling or focused ion beam of the laser sputtering purposes.

[0018] 根据本案构想,其中基板为蓝宝石基板。 [0018] The case is contemplated wherein the substrate is a sapphire substrate.

[0019] 根据本案构想,其中封装步骤由环氧树脂(印oxy resin)、硅胶(silicone)、聚醚酰亚胺(polyetherimide)、氟碳聚合物(f luorocarbon polymer)、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(PC)、或环烯烃共聚物(COC)所施行。 [0019] The case is contemplated wherein the step of encapsulating an epoxy resin (printing oxy resin), silicone (Silicone), polyetherimide (Polyetherimide), fluorocarbon polymers (f luorocarbon polymer), polymethylmethacrylate (PMMA), polycarbonate (PC), or a cyclic olefin copolymer (COC) as the purposes.

[0020] 本案还提供一种提高发光二极管装置发光效率的方法,包括以下步骤:a)在基板上生成发光二极管晶粒;b)形成具有梯形剖面的基板;C)通过发光二极管晶粒来提供第一光束;d)封装基板、发光二极管晶粒和磷光质;以及e)通过第一光束来激发磷光质,以提供 [0020] The case also provides a method for improving the light emitting efficiency of the light emitting diode device, comprising the steps of: a) generating a light emitting diode chip on a substrate; b) forming a substrate having a trapezoidal cross-section; C) provided by the LED chip a first light beam; D) package substrate, a light emitting diode chip and phosphors; and e) phosphors excited by a first light beam to provide

第二光束。 The second beam.

[0021] 根据本案构想,本发明进一步包括在梯形坡面上形成数个槽的步骤。 [0021] The case is contemplated that the present invention further comprises the step of forming a plurality of grooves on a trapezoidal slope.

[0022] 根据本案构想,其中槽由电浆蚀刻、溅射蚀刻、离子光束蚀刻法、反应式离子蚀刻、 激光切割或机械切割所形成。 [0022] The case is contemplated in which the groove is cut by plasma etching, sputter etching, ion beam etching, reactive ion etching, formed by laser or mechanical cutting.

[0023] 根据本案构想,其中形成步骤由电子束蚀刻、激光束直写、灰阶蚀刻、钻石切割、聚焦离子束研磨或激光溅镀来施行。 [0023] The case is contemplated wherein the step of forming an electron beam lithography, laser beam direct writing, gray etching, diamond cutting, milling or focused ion beam to a laser sputtering purposes.

[0024] 根据本案构想,其中基板为蓝宝石基板。 [0024] The case is contemplated wherein the substrate is a sapphire substrate.

[0025] 根据本案构想,其中封装步骤由环氧树脂(印oxy resin)、硅胶(silicone)、聚醚酰亚胺(polyetherimide)、氟碳聚合物(fluorocarbon polymer)、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(PC)、或环烯烃共聚物(COC)所施行。 [0025] The case is contemplated wherein the step of encapsulating an epoxy resin (printing oxy resin), silicone (Silicone), polyetherimide (Polyetherimide), fluorocarbon polymers (fluorocarbon polymer), polymethyl methacrylate ( PMMA), polycarbonate (PC), or a cyclic olefin copolymer (COC) as the purposes.

[0026] 与现有技术相比,本发明是通过增加发光二极管基板与磷光质的接触面积,以提高发光效率。 [0026] Compared with the prior art, the present invention is a light emitting diode by increasing a contact area with the substrate of the phosphors, to improve luminous efficiency.

附图说明 BRIEF DESCRIPTION

[0027] 图1为现有技艺的传统发光二极管; [0027] FIG. 1 is a conventional light-emitting diodes of the prior art;

[0028] 图2为现有技艺中另一经改良的发光二极管; [0028] Figure 2 is another prior art by an improved light emitting diode;

[0029] 图3为本发明的第一实施例; First Embodiment [0029] FIG. 3 embodiment of the present invention;

[0030] 图4为第一实施例的另一样态; [0030] FIG. 4 is a first alternative embodiment of the same state;

[0031] 图5为本发明的第二实施例; Second Embodiment [0031] FIG. 5 of the present invention;

[0032] 图6为第二实施例的另一样态; [0032] FIG. 6 is a second alternative embodiment of the same state;

[0033] 图7为第一与第二实施例的综合样态。 [0033] FIG. 7 is a first embodiment and the second embodiment of the integrated like state.

[0034] 附图标记说明:10-发光二极管;102-蓝宝石基板;104-LED晶粒;106-封装体; 20-发光二极管装置;202-基板;204-发光二极管晶粒;206-封装体;2062-磷光质;30-发光二极管装置;302-基板;3022-槽;3024-坡面;304-发光二极管晶粒;306-封装体; 3062-磷光质。 [0034] REFERENCE NUMERALS: 10- LED; sapphire substrate 102-; 104-LED die; 106- package body; light emitting diode device 20; 202- substrate; 204- LED die; 206- package ; 2062- phosphorescent; 30- light emitting diode device; a substrate 302; 3022- groove; 3024- slope; 304- LED die; 306- package body; 3062- phosphorescent.

具体实施方式 Detailed ways

[0035] 体现本发明特征与优点的两个实施例将在后段的说明中详细叙述。 Both embodiments [0035] The features and advantages of the present invention is embodied will be described in detail described later stage. 本发明能够在不同的态样上具有各种的变化,皆不脱离本发明的范围,且其中的说明及图式在本质上当作说明之用,而非用以限制本发明。 The present invention is capable of various changes in different aspects, neither departing from the scope of the invention, and the description and drawings be taken as illustrative in nature, and not to limit the present invention.

[0036] 第一实施例 [0036] First embodiment

[0037] 图3与图4绘示本发明的第一实施例。 [0037] FIG. 3 illustrates a first embodiment of the present invention and FIG. 在图3中,发光二极管装置20包括基板202、发光二极管晶粒204和封装体206。 In Figure 3, the substrate 20 comprises a light emitting diode device 202, the light emitting diode chip 204 and the package 206. 发光二极管晶粒204可提供第一光束。 LED die 204 may provide a first light beam. 基板202 的剖面呈梯形。 Trapezoidal cross-section of the substrate 202. 基板202用来支承发光二极管晶粒204,可使第一光束自发光二极管晶粒204穿透的。 Substrate 202 for supporting the light emitting diode die 204, allows a first light beam from the light emitting diode chip 204 penetration. 本实施例中,基板202是蓝宝石基板。 In this embodiment, the substrate 202 is a sapphire substrate. 封装体206含有磷光质2062,并封装有发光二极管晶粒204和基板202,以固定发光二极管晶粒20和基板202,当磷光质2062经第一光束激发时提供第二光束。 Package 206 comprising phosphors 2062, and encapsulated light emitting diode die 204 and the substrate 202, to fix the LED chip 20 and the substrate 202, a second light beam when the light beam through the first phosphorescent excited 2062. 实际上,第一光束和第二光束的结合可激发出肉眼可见的白光。 In fact, combining the first and second light beams may excite a visible white light.

[0038] 与图1中的现有技艺相较之下,基板202的剖面呈梯形,并非三角形。 [0038] Under the prior art in FIG. 1 in comparison, the trapezoid cross-section of the substrate 202, not the triangle. 假设基板102和202两者的高度与上表面尺寸均相同,则基板202与封装体206中磷光质2062的接触面积大于图1中的基板102的接触面积。 Suppose the height of both the substrate 102 and the upper surface 202 are the same size, the contact area between the substrate 202 and package 206 is greater than the phosphors 2062 in the area of ​​the contact substrate 102 of FIG. 基板202的结构可改善发光效率。 Structure of the substrate 202 may improve the light emission efficiency.

[0039] 形成发光二极管装置20及结合光的方法包含以下步骤。 Method [0039] The forming apparatus 20 and the light-emitting diode light comprising the steps of binding. 首先,形成具有梯形剖面的基板202,接着在基板202上生成发光二极管晶粒204。 First, a substrate 202 having a trapezoidal cross-section, then generates an LED die 204 on the substrate 202. 其中形成与生成的步骤顺序可对调。 Wherein the step of forming the order may be reversed is generated. 换言之,发光二极管晶粒204先生成于基板202上,之后形成梯形剖面的基板202。 In other words, Mr. LED die 204 on the substrate 202 as, after forming the substrate 202 of trapezoidal cross section.

[0040] 通过发光二极管晶粒204来提供第一光束,并封装基板202、发光二极管晶粒204 和磷光质2062。 [0040] 204 is provided by a first light emitting diode die and the package substrate 202, a light emitting diode chip 204 and the phosphors 2062. 最后,通过第一光束来激发磷光质2062,以提供第二光束。 Finally, the first light beam 2062 to excite the phosphors, to provide a second light beam. 第一和第二光束的结合可产生白光。 The first and second beams may be combined to produce white light. [0041] 在本实施例中,基板202的坡面由电子束蚀刻(electron beam lithography) 所成形,亦可采用激光束直写(laser beam direct writing)、灰阶蚀刻(gray-scale lithography)、|占石切害|J (diamond ruling)、聚焦离子束石开磨(focus ion beam milling) > 激光溅镀(laser ablation)等。 [0041] In the present embodiment, the slope of the substrate 202 by electron beam lithography (electron beam lithography) is formed, we can use a laser beam writing (laser beam direct writing), etching gray (gray-scale lithography), | accounting cut stone damage | J (diamond ruling), focused ion beam milling stone-open (focus ion beam milling)> sputtering laser (laser ablation) and the like. 封装体206由环氧树脂(印oxy resin)所制成,然并不限于环氧树脂(印oxy resin) 0封装体206亦可由硅胶(silicone)、聚醚酰亚胺(polye therimide、氟碳聚合物(fluorocarbon polymer)、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(PC)、或环烯烃共聚物(COC)来制成。 Package 206 is made of an epoxy resin (printing oxy resin), however it is not limited to an epoxy resin (printing oxy resin) 0 package body 206 may (polye therimide purified by silica gel (Silicone), polyether imide, fluorocarbon polymers (fluorocarbon polymer), polymethyl methacrylate (PMMA), polycarbonate (PC), or a cyclic olefin copolymer (COC) be made.

[0042] 根据本发明,基板202的剖面呈梯形。 [0042] According to the present invention, the substrate 202 of trapezoidal cross-section. 因此,基板202的下表面不需要大于上表面。 Thus, the lower surface of the substrate 202 need not be larger than the upper surface. 请参照图4。 Referring to FIG. 基板202的剖面仍呈梯形,然其上表面大于下表面。 Continued to show a trapezoidal cross-section of the substrate 202, however, its upper surface is greater than the lower surface. 基板202与封装体206中磷光质2062的接触面积因而增加,发光效率随之改善。 The substrate 202 and the phosphors 2062 in the contact area of ​​the package 206 thus increasing the luminous efficiency will be improved.

[0043] 第二实施例 [0043] Second Embodiment

[0044] 图5至图7绘示本发明的第二实施例。 [0044] FIG. 5 to FIG. 7 illustrates a second embodiment of the present invention is illustrated. 如图5所示,发光二极管装置30包括基板302、发光二极管晶粒304和封装体306。 5, the light emitting diode device 30 includes a substrate 302, a light emitting diode chip 304 and the package 306. 发光二极管晶粒304可提供第一光束。 LED die 304 may provide a first light beam. 基板302的剖面呈梯形,用来支承发光二极管晶粒304,可使第一光束自发光二极管晶粒304穿透的。 Trapezoidal cross-section of the substrate 302, for supporting the light emitting diode die 304, allows a first light beam from the light emitting diode chip 304 penetration. 本实施例中,基板302是蓝宝石基板,同第一实施例。 In this embodiment, the substrate 302 is a sapphire substrate, a first embodiment of the same embodiment. 封装体306含有磷光质3062并封装有发光二极管晶粒304和基板302,以固定发光二极管晶粒304与基板302,当第一光束激发磷光质3062时提供第二光束。 Package 306 comprising a phosphorescent light emitting diode 3062 and packaged die 304 and the substrate 302, to fix the LED chip 304 and the substrate 302, a second excitation light when the first light beam 3062 upon phosphorescent.

[0045] 不同于第一实施例,基板302在梯形坡面30M上具有槽3022。 [0045] Unlike the first embodiment, the substrate 302 has a groove 3022 on a trapezoidal slope 30M. 槽3022通过电浆蚀刻(plasma etching)形成。 The groove 3022 is formed by plasma etching (plasma etching). 实施上亦可使用溅射蚀刻(sputteretching)、离子光束蚀刻法(ion beam etching)、反应式离子蚀刻(reactive ionetching)、激光切割(laser cutting)或机械切割(mechanical cutting),其效果相同。 Sputter etching may also be used on the embodiment (sputteretching), ion beam etching (ion beam etching), reactive ion etching (reactive ionetching), laser cutting (laser cutting) or mechanical cutting (mechanical cutting), the same effect. 槽3022可增加基板302与磷光质3062的接触面积。 3022 grooves 302 increase the contact area with the substrate 3062 phosphors.

[0046] 同样地,假如基板102和302的高度与上表面尺寸与均相同,则基板302与封装体306中磷光质3062的接触面积大于图1中的基板102的接触面积。 [0046] Similarly, if the height of the substrate 102 and the upper surface 302 are the same size, the contact area between the substrate 302 and the phosphors 306 package 3062 is greater than the contact area of ​​the substrate 102 in FIG. 基板302的结构可改善发光效率。 Substrate 302 may improve the structure of the light emission efficiency.

[0047] 在本实施例,基板302的坡面3024由电子束蚀刻(electron beamlithography) 所成形,同样亦可采用激光束直写(laser beam direct writing)、灰阶蚀刻(gray-scale lithography)、钻石切害|J (diamond ruling)、聚焦离子束石if磨(focus ion beam milling) 或激光溅镀(laser ablation) 0封装体306是由环氧树脂(印oxy resin)所制成。 [0047] In the present embodiment, the slope 302 of the substrate 3024 by the electron beam lithography (electron beamlithography) are formed, the same laser beam writing can (laser beam direct writing), etching gray (gray-scale lithography), diamond cut damage | J (diamond ruling), focused ion beam milling stone if (focus ion beam milling) sputtering or laser (laser ablation) 0 package body 306 is made of an epoxy resin (printing oxy resin). 如同第一实施例,封装体306不限由环氧树脂来制成,亦可由硅胶(silicone)、聚醚酰亚胺(polyetherimide)、氟碳聚合物(fluorocarbon polymer)、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(PC)、或环烯烃共聚物(COC)来制成。 As in the first embodiment, the package 306 is not limited to be made of an epoxy resin, or by the silica gel (Silicone), polyetherimide (Polyetherimide), fluorocarbon polymers (fluorocarbon polymer), polymethylmethacrylate (PMMA), polycarbonate (PC), or a cyclic olefin copolymer (COC) be made.

[0048] 根据本发明,基板302的剖面呈梯形。 [0048] According to the present invention, the substrate 302 cross section is trapezoidal. 因此,基板302的下表面不需要大于上表面。 Thus, the lower surface of the substrate 302 need not be larger than the upper surface. 请参照图6。 Referring to FIG. 基板302的上表面大于其下表面,然其剖面仍呈梯形。 Upper surface of the substrate 302 is greater than its lower surface, and then continued to show a trapezoidal cross section. 基板302与封装体2306中磷光质3062的接触面积因而增加,发光效率亦随之改善 Phosphors 3062 in the contact area of ​​the substrate 2306 with the package body 302 thereby increasing the emission efficiency will also improve

[0049] 应注意的是,任何非垂直的坡面30¾均可使用于本发明,不局限两坡面30¾均有槽3022。 [0049] It should be noted that any non-vertical slope 30¾ can be used in the present invention are not limited to these two slopes 30¾ groove 3022. 如图7所示,在单一坡面30¾上具有槽3022的不对称梯形亦适用于本发明。 As shown in FIG 7, 3022 having an asymmetric trapezoidal groove also useful in the present invention on a single slope 30¾.

[0050] 以上说明对本发明而言只是说明性的,而非限制性的,本领域普通技术人员理解, 在不脱离以下所附权利要求所限定的精神和范围的情况下,可做出许多修改,变化,或等效,但都将落入本发明的保护范围内。 [0050] For the present invention described above is illustrative only, and not restrictive, those of ordinary skill in the art understand, without departing from the following claims as defined by the appended spirit and scope, many modifications may be made , change, or equivalent, but will fall within the scope of the present invention.

Claims (18)

1. 一种发光二极管装置,其特征在于,包括: 用来提供第一光束的发光二极管晶粒;具有梯形剖面的基板,用来支承所述发光二极管晶粒,第一光束可由之透光;以及封装体,含有磷光质并封装有所述发光二极管晶粒和所述基板,用来固定所述发光二极管晶粒和所述基板,在第一光束激发磷光质时来提供第二光束。 A light emitting diode device comprising: a light emitting diode chip for providing a first light beam; a substrate having a trapezoidal cross-section for supporting the light emitting diode chip, the first light beam by the light-transmissive; and a package body, and phosphors containing the encapsulated LED chip and the substrate for the diode chip and the substrate fixing emitting, when excited phosphors in the first beam to provide a second light beam.
2.根据权利要求1所述的发光二极管装置,其特征在于,所述基板在其梯形的坡面上具有槽。 2. The light emitting diode device according to claim 1, wherein the substrate has a trapezoidal groove in its slope.
3.根据权利要求2所述的发光二极管装置,其特征在于,所述槽通过电浆蚀刻、溅射蚀刻、离子光束蚀刻法、反应式离子蚀刻、激光切割或机械切割来形成。 3. The light emitting diode device according to claim 2, wherein said groove is formed by plasma etching, sputter etching, ion beam etching, reactive ion etching, mechanical cutting, or laser cutting.
4.根据权利要求1所述的发光二极管装置,其特征在于,所述基板为蓝宝石基板。 4. The light emitting diode device according to claim 1, wherein the substrate is a sapphire substrate.
5.根据权利要求1所述的发光二极管装置,其特征在于,所述基板由电子束蚀刻、激光束直写、灰阶蚀刻、钻石切割、聚焦离子束研磨或激光溅镀所成形。 The light emitting diode device according to claim 1, wherein said substrate is etched by an electron beam, laser beam direct writing, gray etching, diamond cutting, laser or focused ion beam milling the formed sputtering.
6.根据权利要求1所述的发光二极管装置,其特征在于,所述封装体由环氧树脂、硅胶、聚醚酰亚胺、氟碳聚合物、聚甲基丙烯酸甲酯、聚碳酸酯、或环烯烃共聚物所制成。 The light emitting diode device according to claim 1, wherein the package body made of epoxy resin, silicone, polyether imide, fluorocarbon polymers, polymethyl methacrylate, polycarbonate, or a cyclic olefin copolymer made.
7. 一种提高发光二极管装置发光效率的方法,其特征在于,包括以下步骤: 形成具有梯形剖面的基板;在所述基板上生成发光二极管晶粒; 通过所述发光二极管晶粒来提供第一光束; 封装所述基板、发光二极管晶粒和磷光质;以及通过第一光束激发磷光质,以提供第二光束。 A luminous efficiency of the light emitting diode device, characterized in that, comprising the steps of: forming a substrate having a trapezoidal cross-section; generating a LED chip on the substrate; a first is provided by the LED chip beam; encapsulating the substrate, the light emitting diode chip and phosphors; phosphors and excited by first light beam to provide a second light beam.
8.根据权利要求7所述的提高发光二极管装置发光效率的方法,其特征在于,进一步包括在梯形的坡面上形成多个槽的步骤。 8. improve the luminous efficiency of the light emitting diode device according to a method according to claim 7, characterized in that, further comprising the step of forming a plurality of grooves on the slope trapezoid.
9.根据权利要求8所述的提高发光二极管装置发光效率的方法,其特征在于,所述槽由电浆蚀刻、溅射蚀刻、离子光束蚀刻法、反应式离子蚀刻、激光切割或机械切割所形成。 9. improve the luminous efficiency of the light emitting diode device according to a method according to claim 8, wherein said groove is cut by plasma etching, sputter etching, ion beam etching, reactive ion etching, by laser or mechanical cutting form.
10.根据权利要求7所述的提高发光二极管装置发光效率的方法,其特征在于,形成步骤是通过电子束蚀刻、激光束直写、灰阶蚀刻、钻石切割、聚焦离子束研磨或激光溅镀所施行。 Improve the efficiency of the light emitting diode 10. The light emitting apparatus according to a method according to claim 7, wherein the forming step is performed by electron beam lithography, laser beam direct writing, gray etching, diamond cutting, focused ion beam milling or laser sputtering the implementation.
11.根据权利要求7所述的提高发光二极管装置发光效率的方法,其特征在于,所述基板为蓝宝石基板。 Improve the efficiency of the light emitting diode 11. The light emitting apparatus according to a method according to claim 7, wherein the substrate is a sapphire substrate.
12.根据权利要求7所述的提高发光二极管装置发光效率的方法,其特征在于,封装步骤由环氧树脂、硅胶、聚醚酰亚胺、氟碳聚合物、聚甲基丙烯酸甲酯、聚碳酸酯、或环烯烃共聚物所施行。 Improve the efficiency of the light emitting diode 12. The light emitting apparatus according to a method according to claim 7, wherein the step of encapsulating an epoxy resin, silicone, polyether imide, fluorocarbon polymers, polymethyl methacrylate, poly carbonate, or a cyclic olefin copolymer purposes.
13. 一种提高发光二极管装置发光效率的方法,其特征在于,包括以下步骤: 在一基板上生成发光二极管晶粒;形成具有梯形剖面的所述基板; 通过所述发光二极管晶粒来提供第一光束; 封装所述基板、发光二极管晶粒和磷光质;以及通过第一光束来激发磷光质,以提供第二光束。 13. A method of increasing the luminous efficiency of the light emitting diode device, characterized in that, comprising the steps of: generating a LED chip on a substrate; forming a substrate having a trapezoidal cross-section; provided by the first LED chip a light beam; encapsulating the substrate, the light emitting diode chip and phosphors; phosphors and excited by a first light beam to provide a second light beam.
14.根据权利要求13所述的提高发光二极管装置发光效率的方法,其特征在于,进一步包括在梯形坡面上形成多个槽的步骤。 Improve the efficiency of the light emitting diode 14. The light emitting apparatus according to the method of claim 13, wherein the step of further comprising a plurality of grooves formed in a trapezoidal slope.
15.根据权利要求13所述的提高发光二极管装置发光效率的方法,其特征在于,所述槽由电浆蚀刻、溅射蚀刻、离子光束蚀刻法、反应式离子蚀刻、激光切割或机械切割所形成。 Improve the efficiency of the light emitting diode 15. The light emitting apparatus according to the method of claim 13, wherein said groove is cut by plasma etching, sputter etching, ion beam etching, reactive ion etching, by laser or mechanical cutting form.
16.根据权利要求13所述的提高发光二极管装置发光效率的方法,其特征在于,形成步骤由电子束蚀刻、激光束直写、灰阶蚀刻、钻石切割、聚焦离子束研磨或激光溅镀来施行。 Improve the efficiency of the light emitting diode 16. The light emitting apparatus according to the method of claim 13, wherein the step of forming the electron beam direct writing beam etching, laser etching gray, diamond cutting, milling or focused ion beam to a laser sputtering implementation.
17.根据权利要求13所述的提高发光二极管装置发光效率的方法,其特征在于,所述基板为蓝宝石基板。 Improve the efficiency of the light emitting diode 17. The light emitting apparatus according to the method of claim 13, wherein the substrate is a sapphire substrate.
18.根据权利要求13所述的提高发光二极管装置发光效率的方法,其特征在于,封装步骤是由环氧树脂、硅胶、聚醚酰亚胺、氟碳聚合物、聚甲基丙烯酸甲酯、聚碳酸酯、或环烯烃共聚物所施行。 Improve the efficiency of the light emitting diode 18. The light emitting apparatus according to the method of claim 13, wherein the step of encapsulating by an epoxy, silicone, polyether imide, fluorocarbon polymers, polymethyl methacrylate, polycarbonate, or cyclic olefin copolymer purposes.
CN2010101918239A 2010-06-01 2010-06-01 Light emitting diode device and a method for improving the luminous efficiency CN102270726A (en)

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