CN102270693B - Multijunction laminated solar cell and manufacturing method thereof - Google Patents
Multijunction laminated solar cell and manufacturing method thereof Download PDFInfo
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- CN102270693B CN102270693B CN2011101982583A CN201110198258A CN102270693B CN 102270693 B CN102270693 B CN 102270693B CN 2011101982583 A CN2011101982583 A CN 2011101982583A CN 201110198258 A CN201110198258 A CN 201110198258A CN 102270693 B CN102270693 B CN 102270693B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a multijunction laminated solar cell and a manufacturing method thereof. The multijunction laminated solar cell comprises a cell unit laminated body (A) as well as a top electrode (12) and a back electrode (13) which are arranged on the top and bottom of the cell unit laminated body (A), wherein the cell unit laminated body (A) comprises a bottom-layer cell unit (11) and at least one upper-layer cell unit (10) connected to the top of the bottom-layer cell unit (11) in a laminating manner; the bottom-layer cell unit (11) comprises a substrate (3) and an epitaxial layer(4); the upper-layer cell unit (10) at least comprises an epitaxial layer (2); and the cell unit laminated body (A) can be obtained by performing direct bonding, metallic bonding or inversed welding processes on the bottom-layer cell unit (11) and the upper-layer cell unit (10). According to the invention, not only can the problem of unmatched crystal lattice of the cell unit laminated body (A) is solved, but also the overall working efficiency of the solar cell is improved.
Description
Technical field
The invention belongs to solar cell manufacturing and application, especially a kind of stacked solar cell and preparation method thereof.
Background technology
Existing volume production solar cell mainly adopts materials such as silicon, GaAs to make.Use the efficient of the single junction cell of homogenous material generally can not do very highly.Common mode is with multiple material such as GaInP, and InGaAs and Ge etc. is grown on the same substrate, makes solar cell then.Yet the problem of bringing like this is that the material system that uses at same substrate is too much, causes the unmatched phenomenon of lattice serious, makes the battery material that grows of low quality, influences the raising of efficient.Develop a kind of can the realization and tie series connection, can not be subjected to the solar cell of lattice limitations affect again, have realistic meaning more.
Summary of the invention
The invention provides a kind of many knot stacked solar cell, cascade solar cells and preparation method thereof, can solve the contradiction between many knot series connection and the lattice mismatch, improve the efficient of battery.
For reaching above purpose, the invention provides a kind of many knot lamination solar cells, comprise a battery unit laminated body and the preceding electrode and the back electrode that lay respectively at this battery unit laminated body top and bottom, described battery unit laminated body also comprises,
A bottom cell unit, it comprises substrate and epitaxial loayer; And the stacked upper strata battery unit that is connected in top, bottom cell unit; Described upper strata battery unit comprises an epitaxial loayer at least.
The bottom cell unit substrate is p-InP among the present invention; The epitaxial loayer of bottom cell unit is InGaAsP and InGaAs; The epitaxial loayer of upper strata battery unit is GaInP and GaAs.
Described battery unit laminated body also comprises metal film layer, is used for strengthening the connection of two battery units.
Described two battery unit butt joint interfaces also comprise an anti-reflection anti-anti-film, and the metal pad of two mutual correspondences of battery unit butt joint interface and the Metal Ball between the corresponding metal pad.
Also be filled with gel between described two battery unit butt joint interfaces, be used for further strengthening the connection of the unit of two batteries, guarantee that subsequent technique carries out smoothly.
Described upper strata battery unit also comprises the p-GaAs substrate.
Metal film layer is made material be gold, gold-tin alloy, titanium, nickel with and alloy in a kind of.
Described anti-reflection anti-anti-film production material is MgF
2Or ZnS; The making material of described metal pad is AuGe, Ni, Au or Ti; The making material of described Metal Ball is In or Sn.This method can be strengthened the connection of two battery units, also guarantees the efficient that sees through of incident ray.
Also be provided with a corrosion barrier layer on the battery unit p-GaAs substrate of described upper strata, be used for intercepting corrosive liquid to the corrosion of substrate, peel off from the battery unit epitaxial loayer of upper strata with the disengaging of substrate.
Another object of the present invention has provided the manufacture method of this many knot lamination solar cells, comprises the steps:
(1) adopts molecular beam epitaxy or metal organic-matter chemical vapour deposition method after the InGaAs that grows successively on the p-InP substrate, InGaAsP material form epitaxial loayer, obtain the bottom cell unit;
(2) adopt molecular beam epitaxy or metal organic-matter chemical vapour deposition method behind p-GaAs substrate growth GaAs and GaInP material formation epitaxial loayer, obtain the upper strata battery unit;
(3) under vacuum or nitrogen protection environment, the scope that keep-ups pressure was kept 10～120 minutes 300～600 ℃ of 5～50000N, heating-up temperature scopes, made the stacked top, bottom cell unit that is connected in of upper strata battery unit, formed the battery unit laminated body;
(4) adopt deposition and annealing process electrode and back electrode before the top of battery unit laminated body and bottom deposition respectively, acquisition target product.
Wherein, described battery unit laminated body is that Direct Bonding, metal bonding or inverse bonding by bottom cell unit and upper strata battery unit connects technology and obtain.
This metal bonding technology is to insert a metal film layer at two battery unit butt joint interfaces, and operating condition is consistent with directly connecting, and is wherein a kind of mode that two battery units connect.
It is to insert anti-reflection anti-anti-film and mutual corresponding metal pad and the Metal Ball between the corresponding metal pad at two battery unit butt joint interfaces that inverse bonding connects technology, also is one of three kinds of modes that connect two battery units.
Connect in inverse bonding and also to be included between two battery unit butt joint interfaces gel filledly in the technology, the connection of be used for reinforcing two battery units guarantees carrying out smoothly of subsequent technique.
Also grow between the substrate of described upper strata battery unit and the epitaxial loayer one the corrosion barrier layer.
Described metal film layer is made material be gold, gold-tin alloy, titanium, nickel with and alloy in a kind of.
Described anti-reflection anti-anti-film production material is MgF
2Or ZnS; The making material of described metal pad is AuGe, Ni, Au or Ti; The making material of described Metal Ball is In or Sn.
Beneficial effect of the present invention is: this many knot stacked solar cell, cascade solar cells, utilize the stacked multijunction cell that is connected into of separate binode battery unit, Direct Bonding, metal bonding or the inverse bonding by bottom cell unit, upper strata battery unit connects technology formation lamination solar cell again.Improved on the one hand the utilization ratio of incident light, also solved the unmatched phenomenon of lattice, guaranteed the battery material quality that grows, being improved of battery efficiency.On the other hand, for further improving the utilization ratio of incident light, add anti-reflection anti-anti-film or employing in the scheme and remove the upper strata battery unit substrate mode of bonding again, can improve the bottom cell unit greatly to the utilization ratio of incident light; The adding metal film layer can improve the conductive characteristic of solar cell, the whole operating efficiency that improves lamination solar cell of comprehensive various factors.
Description of drawings
Fig. 1 is the upper strata battery unit (a) of embodiment 1 and embodiment 2 and the structure cutaway view of bottom cell unit (b).
Fig. 2 is embodiment 1 and upper strata battery unit (a) the structure cutaway view of embodiment 2 behind rubbing down.
Fig. 3 is upper strata battery unit (a) behind embodiment 1 and the embodiment 2 growing metal thin layers and the structure cutaway view of bottom cell unit (b).
Fig. 4 is that embodiment 1 is by the structure cutaway view of many knots lamination solar cell of metal film layer bonding;
Fig. 5 ties the structure cutaway view of lamination solar cell more for embodiment 1 Direct Bonding.
Fig. 6 is upper strata battery unit and the bottom cell cellular construction cutaway view behind the anti-reflection anti-anti-film of embodiment 2 evaporations.
Fig. 7 is upper strata battery unit and the bottom cell cellular construction cutaway view after embodiment 2 plated metal pads and the Metal Ball.
Fig. 8 is the structure cutaway view of many knots lamination solar cell of embodiment 2.
Fig. 9 is the upper strata battery unit (a) of embodiment 3 and the structure cutaway view of bottom cell unit (b).
Figure 10 forms upper strata battery unit (a) after anti-reflection anti-anti-film, metal pad and the Metal Ball and the structure cutaway view of bottom cell unit (b) among the embodiment 3.
Figure 11 is the battery unit laminated body structure cutaway view that forms by the inverse bonding connection technology among the embodiment 3.
Figure 12 is battery unit laminated body structure cutaway view gel filled among the embodiment 3.
Figure 13 is the schematic diagram of removing corrosion barrier layer process among the embodiment 3.
Figure 14 is the structure cutaway view of many knots lamination solar cell of embodiment 3.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
As shown in Figure 5, this many knot lamination solar cells, the preceding electrode 12 and the back electrode 13 that comprise a battery unit laminated body A and lay respectively at this battery unit laminated body A top and bottom, described battery unit laminated body A comprises a bottom cell unit 11, and at least one stacked upper strata battery unit 10 that is connected in 11 tops, bottom cell unit; Described bottom cell unit 11 comprises substrate 3 and epitaxial loayer 4; Described upper strata battery unit 10 comprises an epitaxial loayer 2 at least.
Thisly can improve utilization of incident light by the stacked mode that is connected into multijunction solar cell of a plurality of battery units, realize that photoelectricity transforms efficiently.But, owing to the material system that uses at same substrate is too much, cause the unmatched phenomenon serious consequence of lattice, influence the raising of efficient.On the other hand the upper strata battery unit generally with the p-type material as substrate, obvious to absorption of incident light, reduced the utilization ratio of bottom cell unit to incident light.Therefore the present invention is for solving the problems of many knot series-connected cell, lattice mismatch and incident light transmissivities, improves the efficient of battery and proposes following scheme.
This many knot lamination solar cell manufacture methods that present embodiment provides may further comprise the steps:
1. use molecular beam epitaxy (MBE) or metal organic-matter chemical gas deposition (MOCVD) method on p-GaAs substrate 1, grow successively GaAs, GaInP epitaxial loayer 2, obtain upper strata battery unit 10, see Fig. 1 (a); Grow successively on p-InP substrate 3 InGaAs, InGaAsP epitaxial loayer 4 obtain bottom cell unit 11, see Fig. 1 (b).More than two kinds of battery units all are binode battery units, the lattice of each battery unit mates fully.
2. use chemical machinery grinding and polishing (CMP) method with below substrate 1 attenuated polishing to the 150 μ m in the upper strata battery unit 10, see Fig. 2, to reduce incident light absorbed part in the process of seeing through.
3. respectively at the top evaporation layer of metal thin layer 5 of upper strata battery unit 10 substrates, 1 back side and bottom cell unit 11 epitaxial loayers 4, as shown in Figure 3.This metal film layer 5 adopts the gold-tin alloy material.The metallic film layer thickness is at 0.1-10nm.
4. under vacuum or nitrogen protection environment; two battery unit linkage interfaces are aimed at, and the scope that keep-ups pressure was kept 10～120 minutes 300～600 ℃ of 5～50000N, heating-up temperature scopes; upper strata battery unit 10 is connected with bottom cell unit 11 bondings, forms battery unit laminated body A.Under the described conditions, the bonding of two battery unit linkage interfaces can be realized metal bonding by metal film layer 5, as shown in Figure 4; Also can allow two linkage interface Direct Bonding under the same conditions, referring to Fig. 5.
5. at last electrode 12 and back electrode 13 before being positioned at the employing electron beam evaporation method deposition of this battery unit laminated body A top and bottom, back electrode 13 employing AuGe/Ni/Au (35-50nm)/(1-20nm)/(100-300nm).Preceding electrode 14 adopts Ti/Au (30-50nm)/(100-300nm), forms many knot lamination solar cells behind the annealing process.
Above-mentioned metal film layer 5 can also adopt gold or titanium or nickel or titanium nickel alloy material.
This many knot lamination solar cell manufacture methods that present embodiment provides may further comprise the steps:
1. use molecular beam epitaxy (MBE) or metal organic-matter chemical gas deposition (MOCVD) method on p-GaAs substrate 1, grow successively GaAs, GaInP epitaxial loayer 2, obtain upper strata battery unit 10, see Fig. 1 (a); Grow successively on p-InP substrate 2 InGaAs, InGaAsP epitaxial loayer 4 obtain bottom cell unit 11, see Fig. 1 (b).More than two kinds of battery units all are binode battery units, the lattice of each battery unit mates fully.
2. use chemical machinery grinding and polishing (CMP) method with below substrate 1 attenuated polishing to the 150 μ m in the upper strata battery unit 10, see that Fig. 2 is to reduce incident light absorbed part in the process of seeing through.
3. respectively at the anti-reflection anti-anti-film 6 of top evaporation one deck of upper strata battery unit 10 substrates, 1 back side and bottom cell unit 11 epitaxial loayers 4, referring to Fig. 6, be used for anti-reflection solar spectrum medium wavelength greater than the part of 0.9 μ m, reflection wavelength is less than the part of 0.9 μ m.The anti-reflection anti-anti-film 6 general MgF that use
2Make with the ZnS material.
4. mutually accordingly remove part anti-reflection anti-anti-film 6 by photoetching technique at two linkage interfaces at the top of upper strata battery unit 10 substrates, 1 back side and bottom cell unit 11 epitaxial loayers 4 respectively, the method for deposited by electron beam evaporation is removed partially filled several metal pads 7 at anti-reflection anti-anti-film 6 then.The making material of metal pad 7 is looked contact material and is determined, generally is the employing AuGe/Ni/Au that contacts with the n type, the employing Ti/Au that contacts with p-type.Be in this example, with the metal pad 7 employing Ni materials at upper strata battery unit 10 substrates 1 back side, the Ti material is adopted at the top of bottom cell unit 11 epitaxial loayers 4.Through peeling off and annealing process, form some groups of mutual corresponding metal pads 7 at two linkage interfaces, as shown in Figure 7 again.
By photoetching technique, thermal evaporation, peel off and reflux technique, be formed for welding integrated Metal Ball 8 at metal pad 7, as shown in Figure 7.Metal Ball 8 is made material can adopt In or Sn.Apply certain pressure, and heat fused Metal Ball 8.Welding condition for In is: 145-165 ℃, and the every solder joint of 0.1-0.5g/, retention time 1-5min; Welding condition for Sn is: 225-245 ℃, and the every solder joint of 0.1-0.5g/, retention time 1-5min.Use inverse bonding to connect technology then; the upper strata battery unit is aimed at the linkage interface of bottom cell unit; under vacuum or nitrogen protection environment; the scope that keep-ups pressure is 300～600 ℃ of 5～50000N, heating-up temperature scopes; kept 10～120 minutes; make the stacked top, bottom cell unit that is connected in of upper strata battery unit, form battery unit laminated body A, as shown in Figure 8.The battery unit laminated body A that this method forms, each battery unit are independent mutually, needn't consider the unmatched phenomenon of lattice between the battery unit, the manufacture method simple possible.
6. at last electrode 12 and back electrode 13 before being positioned at the employing sputtering method deposition of this battery unit laminated body A top and bottom, back electrode 13 employing AuGe/Ni/Au (35-50nm)/(1-20nm)/(100-300nm).Preceding electrode 14 adopts Pt/Au (30-50nm)/(100-300nm), forms many knot lamination solar cells behind the annealing process.
This many knot lamination solar cell manufacture methods that present embodiment provides may further comprise the steps:
1. use molecular beam epitaxy (MBE) or metal organic-matter chemical gas deposition (MOCVD) method on p-InP substrate 3, grow successively InGaAs, InGaAsP epitaxial loayer 4, obtain bottom cell unit 11, referring to Fig. 9 (b).
Adopting molecular beam epitaxy (MBE) or metal organic-matter chemical gas deposition (MOCVD) method elder generation growth one deck thickness at p-GaAs substrate 1 is the corrosion barrier layer 9 of 50-1000nm, the making material of this corrosion barrier layer 9 is AlGaAs, adopt identical method corroding the GaInP that grows successively on the barrier layer 9, GaAs material formation epitaxial loayer 2 then, obtain upper strata battery unit 10, referring to Fig. 9 (a).It should be noted that, this upper strata battery unit 10 material layer from bottom to up is respectively p-GaAs, AlGaAs, GaInP and GaAs, upper strata battery unit 10 epitaxial loayers 2 of itself and embodiment 1 and embodiment 2 relatively, the succession of material is put upside down, and has also introduced corrosion barrier layer 9 between epitaxial loayer 2 and the substrate 1.
2. respectively at the anti-reflection anti-anti-film 6 of the top of upper strata battery unit 10 and bottom cell unit 11 evaporation light one deck, be used for anti-reflection solar spectrum medium wavelength greater than the part of 0.9 μ m, reflection wavelength is less than the part of 0.9 μ m.Anti-reflection anti-anti-film generally uses MgF
2Make with the ZnS material.
3. remove part anti-reflection anti-anti-film 6 by photoetching technique in the mutual correspondence of two linkage interfaces at the top of upper strata battery unit 10 and bottom cell unit 11 respectively, the method for deposited by electron beam evaporation is removed partially filled several metal pads 7 at anti-reflection anti-anti-film 6 then.In this example, the top metal pad 7 of upper strata battery unit 10 and bottom cell unit 11 all adopts the Au material.Again through peeling off and annealing process, form some groups of corresponding metal pads 7 mutually, referring to Figure 10 (a) and (b).
By photoetching technique, thermal evaporation, peel off and reflux technique, be formed for welding integrated Metal Ball 8 at metal pad 7, as shown in figure 10.Metal Ball 8 is made material can adopt In or Sn.Then upper strata battery unit 10 is put upside down; allow battery unit 10 tops in upper strata aim at the linkage interface at 11 tops, bottom cell unit; use inverse bonding to connect technology; under vacuum or nitrogen protection environment; the scope that keep-ups pressure was kept 10～120 minutes 300～600 ℃ of 5～50000N, heating-up temperature scopes, made the stacked top, bottom cell unit that is connected in of upper strata battery unit; form battery unit laminated body A, its form as shown in figure 11.
5. between the linkage interface that has welded, fill the gel 15 of high transmission rate, adopt epoxide-resin glue (Epoxy Tech 301-2) in the present embodiment, be used for reinforcing the connection between two battery units, guarantee that follow-up mechanical grinding and polishing process carries out smoothly, as shown in figure 12.
6. re-use chemical machinery grinding and polishing (CMP) method upper strata battery unit 10 substrates 1 part is thinned to 50-100 μ m, use selective corrosion liquid hydrogen fluoric acid then, erode corrosion barrier layer 9, substrate 1 is peeled off upper strata battery unit 10 fully, as shown in figure 13.Need to carry out earlier chemical mechanical poslishing in this step and throw technology, corrode with selective corrosion liquid again.This is because selective corrosion corrosion speed is very slow, at 0.1-0.3 μ m/min.General material is as if not attenuate grinding and polishing, and removing 400 μ m substrates needs 4000min, just about 60 hours.Etching time is oversize, might cause damage to material, and etchant solution needs continuous updating.Therefore the method that adopts substep to carry out is finished the removal of corrosion barrier layer 9.
7. the preceding electrode 12 that battery is carried out in the battery unit laminated body A top of acquisition and bottom in step 6 and back electrode 13 are made.Adopt the preceding electrode 12 of electron beam evaporation method deposition and back electrode 13, back electrode 13 adopts AuGe/Ni/Au (35-50nm)/(1-20nm)/(100-300nm), preceding electrode 14 adopts Pt/Au (30-50nm)/(100-300nm), form many knot lamination solar cells behind the annealing process, as shown in figure 14.Many knots lamination solar cell that present embodiment is made, the epitaxial loayer 2 of upper strata battery unit 10 is inverted growth earlier, and then puts upside down integrated back and remove substrate 1, has effectively avoided light loss.
More than many knots lamination solar cell of obtaining of several manufacture methods solve the unmatched phenomenon of lattice effectively, guaranteed the battery material quality that grows and the whole operating efficiency that improves lamination solar cell.But can not illustrate that protection scope of the present invention only limits to above-mentioned several method, every take a hint thus or those of ordinary skills all belong to the scope of protection of the invention through simple technical scheme of replacing on this basis.
Claims (9)
1. tie lamination solar cell one kind more, the preceding electrode (12) and the back electrode (13) that comprise a battery unit laminated body (A) and lay respectively at this battery unit laminated body (A) top and bottom, it is characterized in that: described battery unit laminated body (A) also comprises
A bottom cell unit (11), it comprises substrate (3) and epitaxial loayer (4); And
The stacked upper strata battery unit (10) that is connected in top, bottom cell unit (11); Described upper strata battery unit (10) comprises an epitaxial loayer (2) at least; Described two battery unit butt joint interfaces also comprise an anti-reflection anti-anti-film (6), and the metal pad (7) of two mutual correspondences of battery unit butt joint interface and the Metal Ball (8) between the corresponding metal pad (7).
2. many knot lamination solar cells according to claim 1, it is characterized in that: described bottom cell unit (11) substrate (2) is p-InP; The epitaxial loayer (4) of described bottom cell unit (11) is InGaAsP and InGaAs; The epitaxial loayer (2) of described upper strata battery unit (10) is GaInP and GaAs.
3. many knot lamination solar cells according to claim 1 is characterized in that: also be filled with gel (15) between described two battery unit butt joint interfaces.
4. many knot lamination solar cells according to claim 1, it is characterized in that: described upper strata battery unit (10) also comprises p-GaAs substrate (2).
5. many knot lamination solar cells according to claim 1, it is characterized in that: it is MgF that described anti-reflection anti-anti-film (6) is made material
2Or ZnS; The making material of described metal pad (7) is AuGe, Ni, Au or Ti; The making material of described Metal Ball (8) is In or Sn.
6. the manufacture method of the lamination solar cell of knot more than a kind is characterized in that comprising the steps:
Adopt molecular beam epitaxy or metal organic-matter chemical vapour deposition method after the InGaAs that grows successively on the p-InP substrate (3), InGaAsP material form epitaxial loayer (4), obtain bottom cell unit (11);
Adopt molecular beam epitaxy or metal organic-matter chemical vapour deposition method behind p-GaAs substrate (1) growth GaAs and GaInP material formation epitaxial loayer (2), obtain upper strata battery unit (10);
Under vacuum or nitrogen protection environment, the scope that keep-ups pressure is 300 ~ 600 ℃ of 5 ~ 50000N, heating-up temperature scopes, kept 10 ~ 120 minutes, and made the folded top, bottom cell unit (1) that is connected in of upper strata battery unit layer (10), form battery unit laminated body (A);
Adopt deposition and annealing process electrode (12) and back electrode (13) before the top of battery unit laminated body (A) and bottom deposition respectively, the acquisition target product; Described battery unit laminated body (A) connects technology by bottom cell unit (11) and upper strata battery unit (10) inverse bonding and obtains; It is to insert an anti-reflection anti-anti-film (6) at two battery unit butt joint interfaces that described inverse bonding connects technology, and mutual corresponding metal pad (7) and the Metal Ball (8) between the corresponding metal pad (7), two linkage interface places of described upper strata battery unit (10) and bottom cell unit (11) adopt the mutual correspondence of photoetching technique to remove the anti-reflection anti-anti-film (6) of part, adopt the method for electron beam evaporation to remove partially filled metal pad (7) at anti-reflection anti-anti-film (6) then.
7. the manufacture method of many knot lamination solar cells according to claim 6, it is characterized in that: described inverse bonding connects technology and also is included in gel filled (15) between two battery unit butt joint interfaces.
8. the manufacture method of many knot lamination solar cells according to claim 6 is characterized in that: the corrosion barrier layer (9) of also growing between the substrate (1) of described upper strata battery unit (10) and the epitaxial loayer (2).
9. the manufacture method of many knot lamination solar cells according to claim 6, it is characterized in that: it is MgF that described anti-reflection anti-anti-film (6) is made material
2Or ZnS; The making material of described metal pad (7) is AuGe, Ni, Au or Ti; The making material of described Metal Ball (8) is In or Sn.
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| US20140137930A1 (en) * | 2012-11-16 | 2014-05-22 | Solar Junction Corporation | Multijunction solar cells |
| CN103199149B (en) * | 2013-02-28 | 2015-07-15 | 溧阳市生产力促进中心 | Manufacturing method of four-step cascade photovoltaic cell with antireflection film |
| CN103346190B (en) * | 2013-06-04 | 2016-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Four knot tandem solar cell of Si substrate and preparation method thereof |
| CN103346191B (en) * | 2013-06-06 | 2017-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaAsP/InGaAs four-knot cascade solar cell and preparation method thereof |
| CN103426965B (en) * | 2013-08-16 | 2016-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solaode and preparation method thereof |
| CN104022176B (en) * | 2014-06-24 | 2016-04-20 | 天津三安光电有限公司 | The preparation method of four-junction solar cell |
| TWI684801B (en) | 2019-04-26 | 2020-02-11 | 國立清華大學 | Light conversion device |
| CN111864007A (en) * | 2019-04-26 | 2020-10-30 | 吴孟奇 | Light conversion element |
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| US7488890B2 (en) * | 2003-04-21 | 2009-02-10 | Sharp Kabushiki Kaisha | Compound solar battery and manufacturing method thereof |
| CN101950774A (en) * | 2010-08-17 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery |
| CN102110594B (en) * | 2010-12-20 | 2012-07-25 | 中国科学院半导体研究所 | Method for performing low-temperature metal bonding on GaAs and Si |
| CN102110595B (en) * | 2010-12-20 | 2012-04-25 | 中国科学院半导体研究所 | Method for performing low-temperature metal bonding on InGaAs and GaAs |
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| WO2017133976A1 (en) * | 2016-02-03 | 2017-08-10 | Soitec | Engineered substrate with embedded mirror |
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